CN109979900A - A kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator - Google Patents
A kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator Download PDFInfo
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- CN109979900A CN109979900A CN201910300689.2A CN201910300689A CN109979900A CN 109979900 A CN109979900 A CN 109979900A CN 201910300689 A CN201910300689 A CN 201910300689A CN 109979900 A CN109979900 A CN 109979900A
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- 239000000758 substrate Substances 0.000 title claims abstract description 98
- 239000002131 composite material Substances 0.000 title claims abstract description 16
- 238000010276 construction Methods 0.000 title claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 33
- 239000012530 fluid Substances 0.000 claims abstract description 30
- 230000008676 import Effects 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 241000937378 Everettia interior Species 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 22
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
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- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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Abstract
A kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator, belongs to microelectronic component cooling technology field.It is cooled down in the substrate grade of GaN HEMT device, reduces the use of interface cohesion material, greatly reduce junction temperature, extend the service life of GaN HEMT device.The application is made of upper substrate (6) and lower substrate (5), wherein upper substrate includes nanoporous region (2), fluid inlet (1) and fluid outlet (8), and the positive engraving of lower substrate has microchannel region (4), import liquid-accumulating trough (3) and outlet liquid-accumulating trough (9).Upper substrate (6) and lower substrate (5) use bonding techniques to be packaged processing, guarantee nano-porous structure region (2) and microchannel region (4) preferable contact.The present apparatus has stable, uniformity of temperature profile, the characteristics of required working medium is few, operating pressure is low etc. using the phase transformation evaporative heat loss of liquid in nano-pore.
Description
Technical field
The invention belongs to GaN HEMT device substrate grade cooling technology fields, and it is multiple to be related to a kind of microchannel-nanoporous
Close the evaporator heat dissipation design of structure.
Background technique
With the development of advanced material manufacturing technology and high power electronic device performance, gallium nitride (GaN) high electron mobility
Rate transistor (HEMT) device is applied in the every field such as wireless telecommunications and radar, especially in military and aerospace neck
Domain.However, the high heat flow density problem of bring therefrom, so that the power of GaN HEMT device is only limitted to its potential power
/ 10th of output extend device lifetime to keep acceptable junction temperature.GaN HEMT device is in 5~10mm2Plane face
5kW/cm is generated in product2Submillimeter hot spot, Multiple hot zone distribution exists, and the background hot-fluid on entire substrate also reaches
1kW/cm2.Therefore, it is necessary to a kind of novel, efficient radiators to solve the heat dissipation of GaN HEMT device, to effectively drop
Low junction temperature.
Currently, the radiator for setting about actively studying both at home and abroad includes: micro heat pipe heat dissipation, micro- equal backing, microchannel
Heat sink, thermoelectric cooling technology and monoblock type micro-cooler etc., however these traditional heat dissipations mostly use the solid of high thermal conductivity
Radiator (copper, compound and diamond of copper etc.) and thermal interfacial material (solder and epoxy resin), in conjunction with air it is cooling or
Liquid is cooling, achievees the purpose that heat dissipation.A kind of monoblock type cooling evaporator in novel device is in substrate grade, rather than in device
The package level of part is removed heat, to eliminate the use of interface cohesion material, greatly reduces the thermal conduction resistance of device,
To reduce junction temperature.Therefore design the phase transformation evaporator on a kind of device substrate, can performance to GaN HEMT device and
There is substantial improvement in reliability.Microchannel is formed to a kind of micro-nano compound structure evaporation in conjunction with nano-porous structure
Device, this evaporator combine the advantage of flow boiling and pool boiling, have not only met the radiating requirements of high heat flux density, but also
Boiling wild effect will not be generated, and system is small in the capillary force effect of nano-pore, substantially reduces the consumption of pump work, at
For a kind of ideal evaporator radiator structure.
Apparatus of the present invention for GaN HEMT device high heat flux density and Multiple hot zone distribution there are the characteristics of, propose one kind
The microchannel of substrate grade-nanoporous composite construction evaporation heat sink realizes uniformity of temperature profile, stable, reduces GaN
The operation junction temperature of HEMT device, the effect prolonged its service life.
Summary of the invention
The object of the present invention is to provide a kind of with microchannel-nanoporous composite construction evaporator, for solving
Certainly there are problems for the high heat flux density of GaN HEMT device and Multiple hot zone distribution, provide reliable knot for its safe and stable operation
Temperature.
The compound evaporator of microchannel-nanoporous that the present invention devises a kind of novel GaN HEMT device substrate grade dissipates
Thermal, it is characterised in that: be etched on GaN HEMT device substrate, eliminate the use of interface cohesion material, such as Fig. 9
It is shown；Including the upper substrate (6) and lower substrate (5) being combined together up and down；The center of upper substrate (6) is equipped with multiple nanoporous
Structural region (2), the opposite two sides of multiple nanoporous regions (2) are respectively equipped with fluid inlet (1) and fluid outlet (8), stream
Body entrance (1) and fluid outlet (8) are through-hole, are connected with external liquid feed line；The nanoporous is logical for nanometer
Hole array；Nanometer through-hole is the hole being interlinked to the outside i.e. interior up and down of upper substrate (6)；
The upper surface surrounding of lower substrate (5) is flat and smooth region, and upper surface center is equipped with groove, the center of groove
Place is equipped with multiple microchannel regions (4), and multiple microchannel region (4) parallel series arrange, multiple microchannel regions (4) in groove
Two sides be respectively import liquid-accumulating trough (3) and outlet liquid-accumulating trough (9), each microchannel region (4) with import liquid-accumulating trough (3) and
Outlet liquid-accumulating trough (9) communicates, and import liquid-accumulating trough (3) and the fluid inlet (1) of upper substrate (6) are mutually communicated, and exports liquid-accumulating trough (3)
It is mutually communicated with the fluid outlet (8) of upper substrate (6), the microchannel region (4) of lower substrate (5) and the nanometer of upper substrate (6) are more
Pore structure region (2) is corresponding one by one；
Microchannel region (4) is multiple microchannel arranged in parallel, equipped with the direction for channel be along the direction AB, then it is multiple
Microchannel arranged in parallel is along the direction the CD arranged in parallel in the vertical direction AB, and multiple microchannel regions (4) are along the arrangement of the direction AB；Nanometer
Porous structure region (2) directly contacts up and down with microchannel region (4), preferably the nanometer through-hole diameter of nanoporous region (2)
Minimum less than the size of space, that is, thickness between the width and two adjacent microchannels of microchannel, between two nanometers of through-holes
Place interval is less than the size of space, that is, thickness between the width and two adjacent microchannels of microchannel.
Microchannel region (4) top surface of entire evaporator radiator and the either flush of lower substrate (5) peripheral regions, receive
The bottom surface in rice porous structure region (2) is concordant with the bottom surface of upper substrate (6), and the thickness in nano-porous structure region is equally being received
Rice magnitude.Upper substrate (6) and lower substrate (5) are welded together using encapsulation bonding techniques, microchannel region (4) and nanoporous
Structural region (2) is also combined closely, and ensure that the airtightness of whole device and contact are good.
The heat dissipation of the compound evaporator of microchannel-nanoporous of novel GaN HEMT device substrate grade proposed by the present invention
Device distributing position and area size can be determined according to the specific size of device.For the structure of definitely upper and lower base plate, Fig. 1
The top view of upper substrate (6) and lower substrate (5) is set forth with Fig. 2.
In the present invention, liquid enters the import liquid-accumulating trough (3) of lower substrate (5) by the fluid inlet (1) of upper substrate (6)
It is interior, microchannel region (4) are passed through, are eventually entered into nano-porous structure region (2), the heat source of entire evaporator passes through thermally conductive biography
Be delivered to nanoporous region (2), and nanoporous region (2) with Base Heat zone position is vertically opposite answers；In nanoporous region
(2) the evaporative phase-change process that liquid occurs, takes away the heat of heat source, is dispersed into condenser, and extra liquid is stored by outlet
Liquid bath (9) reaches fluid outlet (8), is again introduced into circulating pump, the size of circulatory system condenser can carry out according to actual needs
It adjusts, circulatory system schematic diagram is as shown in Figure 8.
Fluid working substance can select empty gas and water, refrigerant or other insulative dielectric liquid stream bodies, the material of system and device respectively
The compound of silicon and silicon may be selected.
The present invention has following advantages and effect:
1, in the present invention, liquid enters the import liquid-accumulating trough of lower substrate (5) from the liquid inlet (1) of upper substrate (6)
(3), it flows through in microchannel (4), partially liq is evaporated in nano-porous structure region (2), and another part liquid is through micro- logical
Road (4) reaches outlet liquid-accumulating trough (9) so that the bottom surface Temperature Distribution of lower substrate (5) is more uniform and temperature is effectively reduced.
2, using the latent heat of vaporization of thin film evaporation phenomenon and liquid in nano-pore, to reach to GaN HEMT device substrate
The heat dissipation of grade reduces junction temperature.
3, meet GaN HEMT device high heat flux density and Multiple hot zone distribution there are the characteristics of, the size of evaporation capacity can root
It is self-regulated under the action of capillary force according to hot-fluid size.
4, liquid is constantly in evaporating state in nano-porous structure, and boiling phenomenon will not occur, so that entire evaporation
Device can be safely and steadily run.
5, because of the presence of nano-porous structure capillary force, so that the consumption of pump work greatly reduces, to be effectively reduced
The utilization of the energy.
6, the presence of microchannel can play the role of support protection, so that nanostructure is not easy to nano-porous structure
It is damaged, meanwhile, the flowing feed flow effect of microchannel can also reduce the contaminated probability of nanostructure to a certain extent.
Detailed description of the invention
Fig. 1 is the upper substrate top view of composite construction of the present invention；
In figure: 1, liquid inlet, 2, nano-porous structure region, 6, upper substrate, 8, liquid outlet.
Fig. 2 is the lower substrate top view of composite construction of the present invention；
In figure: 3, import liquid-accumulating trough, 4, microchannel region, 5, lower substrate, 9, outlet liquid-accumulating trough.
Fig. 3 is overall structure diagram of the invention.
In figure: 1, liquid inlet, 2, nano-porous structure region, 3, import liquid-accumulating trough, 4, microchannel region, 5, lower base
Plate, 6, upper substrate, 8, liquid outlet, 9, outlet liquid-accumulating trough.
Fig. 4 is the bottom schematic view of cooling device of the present invention.
In figure: 7, GaN HEMT device or heating film.
Fig. 5 is the integrally-built A-A sectional view of apparatus of the present invention and its partial enlarged view.
Fig. 6 is the detailed dimensions (non-in proportion, unit um) of microchannel and nano-porous structure.
Fig. 7 is specific processing technology schematic diagram of the invention.
Fig. 8 is big condenser schematic illustration in the circulatory system of the present invention.
The schematic illustration of small condenser in Fig. 9 circulatory system of the present invention.
Figure 10 is GaN HEMT device and evaporator position view.
Specific embodiment
With reference to the accompanying drawing and microchannel-nanoporous composite construction evaporator GaN HEMT device application to this hair
It is bright to be further described；But the present invention is not limited to following embodiments.
Core of the invention thinking is: being etched on GaN HEMT device substrate, eliminates interface cohesion material
It uses, reduces junction temperature.Liquid enters the import liquid-accumulating trough 3 of lower substrate 6 by 1 through-hole of liquid inlet, passes through microchannel area
Domain 4 enters nano-porous structure region 2, another part liquid flow inlet/outlet liquid-accumulating trough 9 by 4 partially liq of microchannel region.Heat
Amount is transmitted to nano-porous structure region 2 by the thermally conductive of microchannel wall surface, and the liquid of inflow is taken away porous by evaporative phase-change
The heat in region achievees the purpose that heat dissipation with this.Using the effect of condenser and Micropump, it is recycled.
It is etched on GaN HEMT device substrate, eliminates the use of interface cohesion material, reduce junction temperature.Including
Upper substrate 6 and lower substrate 5；The center of upper substrate 6 is nano-porous structure region 2, and the two sides in nano-porous structure region 2 are distinguished
For fluid inlet 1 and fluid outlet 8, fluid inlet 1 and fluid outlet 8 are through-hole, are connected with external liquid line；Lower base
The positive surrounding of plate 5 is flat and smooth region, is microchannel region 4 at front center position, and multiple microchannel regions 4 are parallel simultaneously
Row, left and right ends are import liquid-accumulating trough 3 and outlet liquid-accumulating trough 9, and microchannel is partially communicated between two liquid-accumulating troughs with flowing through, import
Liquid-accumulating trough 3 and the fluid inlet 1 of upper substrate 6 are mutually communicated, and export liquid-accumulating trough 3 and the fluid outlet 8 of upper substrate 6 is mutually communicated,
The microchannel region 4 of lower substrate 5 and the nano-porous structure region 2 of upper substrate 6 are corresponding vertically upward.Upper substrate 6 and lower base
Plate 5 is packaged together using bonding techniques, ensure that the airtightness of whole device is good.
The flush of the top surface areas of the top surface and 5 surrounding of lower substrate in microchannel region 4.
The bottom in nano-porous structure region 2 is concordant with the bottom of upper substrate 6, and the thickness in nano-porous structure region 2
It is similarly nanometer scale.
Nano-porous structure region 2 and microchannel region 4 are in close contact, and have identical whole apparent area, nanoporous
Structural region 2 is located at the upside of microchannel region 4, and with Base Heat zone position is vertically opposite answers.
For the channel wall thickness in microchannel region 4 in 5um or so, channel width both ensure that channel to nanometer in 20um or so
The support protective effect in porous structure region 2, and enough liquid feed paths are met, so that single unit system structure is more
It is stable and efficient.
Liquid is entered in the import liquid-accumulating trough 3 of lower substrate 5 by the fluid inlet 1 of upper substrate 6, passes through microchannel region
4, partially liq enters nano-porous structure region 2, here the evaporative phase-change process of generation liquid, the heat with walking apparatus,
It is dispersed into ambient enviroment, another part liquid reaches outlet liquid-accumulating trough 9 by microchannel region 4.
Heat source passes through the wall surface conductive force in microchannel region 4, heat is imported nano-porous structure region 2, in nanometer
Evaporative phase-change occurs for porous zone, to achieve the purpose that heat dissipation.
The size of the condenser of the entire circulatory system can need to choose whether using compression according to practical heat dissipation area
Machine is to reduce the size of condenser.
Embodiment 1
With the development of high power electronic device performance, GaN HEMT device is used widely, because electronic equipment at
This is excessively high, therefore is sent out in the present invention in the way of the bottom surface of lower substrate 6 plating platinum layer heating film to simulate actual electronic device
Heat, as shown in Figure 4.It in practical applications can be more to microchannel and nanometer according to GaN HEMT device size and hot-zone characteristic distributions
Bore region entire area, position change, in this example, the aperture of microchannel specific structure size and nanoporous
It is as shown in Figure 6 with the size of space.Microchannel wall thickness 5um, channel width 20um, channel upper-lower height 20um, the aperture of nano-pore
0.1um is spaced 0.2um, up and down with a thickness of 0.4um.
The present invention uses a silicon as material, silicon wafer thickness 150um, using MEMSMicro-Electromechanical
System and NEMSNano-Electromechanical System technique is processed substrate, specific processing bonding
Process schematic such as Fig. 7.A-1 and b-1 is initial silicon substrate in figure, and the method for recycling ion(ic) etching etches upper substrate respectively
6 liquid-inlet 1 and the thickness of liquid outlet 8, porous zone, as shown in the b-2 of Fig. 7；Meanwhile etching the micro- logical of lower substrate 5
Road and inlet and outlet liquid-accumulating trough, as shown in the a-2 of Fig. 7.Electron beam lithography is utilized to the area of reduced thickness of the b-2 of Fig. 7 again,
The structure of nanoporous is obtained, as shown in the b-3 of Fig. 7.The a-2 of Fig. 7 and b-3 are encapsulated in one using silocon-silicon linkage technology again
Rise, at this time the fluid inlet 1 of upper substrate 6 and fluid outlet 8 respectively with the import liquid-accumulating trough 3 of lower substrate 5 and export liquid-accumulating trough 9 just
It is good opposite.The bottom of device that encapsulation is completed plates the Pt heating layer 7 of one layer of 0.1um using magnetron sputtering technique, and draws two
Electrode so far completes the manufacture processing of entire experiment evaporator to connect circuit.
Using dielectric fluid as working medium, is entered in import liquid-accumulating trough 3 by liquid inlet 1, pass through microchannel region 4, one
Shunting body nano-porous structure region 2 undergoes phase transition evaporation, and another part flows through microchannel region 4 and enters outlet liquid-accumulating trough 9.Heat
Amount is imported in porous structure by the heating film 7 of 5 bottom of lower substrate by microchannel, then takes away heat by liquid phase-change in hole.Under
Each position is heated in 5 bottom surface of substrate has good temperature uniformity, meets the radiating requirements of GaN HEMT device, reduces knot
Temperature extends the service life of device.The condenser size of the entire circulatory system can be adjusted according to actual needs, system signal
Figure is as shown in Figure 8 and Figure 9.
In conclusion the above is only a preferred embodiment of the present invention, it is not intended to limit protection scope of the present invention.It is all
Made any modification and improvement etc., should all be included in the protection scope of the present invention within the spirit and principles in the present invention.
Claims (8)
1. a kind of microchannel of GaN HEMT device substrate grade-nanoporous composite construction evaporator, which is characterized in that including upper
Under the upper substrate (6) and lower substrate (5) that are combined together；The center of upper substrate (6) is equipped with multiple nano-porous structure regions
(2), the opposite two sides of multiple nanoporous regions (2) are respectively equipped with fluid inlet (1) and fluid outlet (8), fluid inlet (1)
It is through-hole with fluid outlet (8), is connected with external liquid feed line；The nanoporous is nanometer through-hole array；It receives
Rice grain pattern hole is the hole being interlinked to the outside i.e. interior up and down of upper substrate (6)；
The upper surface surrounding of lower substrate (5) is flat and smooth region, and upper surface center is equipped with groove, sets at the center of groove
There are multiple microchannel regions (4), multiple microchannel region (4) parallel series arrange, the two of multiple microchannel regions (4) in groove
Side be respectively import liquid-accumulating trough (3) and outlet liquid-accumulating trough (9), each microchannel region (4) with import liquid-accumulating trough (3) and outlet
Liquid-accumulating trough (9) communicates, and import liquid-accumulating trough (3) and the fluid inlet (1) of upper substrate (6) are mutually communicated, outlet liquid-accumulating trough (3) with it is upper
The fluid outlet (8) of substrate (6) is mutually communicated, the microchannel region (4) of lower substrate (5) and the nanoporous knot of upper substrate (6)
Structure region (2) is corresponding one by one；
Microchannel region (4) top surface of entire evaporator radiator and the either flush of lower substrate (5) peripheral regions, nanometer are more
The bottom surface in pore structure region (2) is concordant with the bottom surface of upper substrate (6), and the thickness in nano-porous structure region is equally in nanometer amount
Grade；Upper substrate (6) and lower substrate (5) are welded together using encapsulation bonding techniques, microchannel region (4) and nano-porous structure
Also it combines closely in region (2).
2. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that microchannel region (4) are multiple microchannel arranged in parallel, equipped with the direction for channel be along the direction AB,
Then multiple microchannel arranged in parallel are along the direction the CD arranged in parallel in the vertical direction AB, and multiple microchannel regions (4) are along the direction AB row
Column；Nano-porous structure region (2) directly contacts up and down with microchannel region (4).
3. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that the nanometer through-hole diameter of nanoporous region (2) be less than microchannel width and two adjacent microchannels it
Between the size of space, that is, thickness, the minimum place interval between two nanometers of through-holes is adjacent micro- less than the width of microchannel and two
The size of space, that is, thickness between channel.
4. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 3-nanoporous composite construction evaporation
Device, which is characterized in that the channel wall thickness in microchannel region is in 5um, and channel width is in 20um.
5. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that microchannel region (4) top surface of entire evaporator radiator and the top surface of lower substrate (5) peripheral regions
Concordantly, the bottom surface of nano-porous structure region (2) is concordant with the bottom surface of upper substrate (6), and the thickness in nano-porous structure region
Equally in nanometer scale.
6. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that upper substrate (6) and lower substrate (5) are welded together using encapsulation bonding techniques, microchannel region (4) and
Nano-porous structure region (2) is also combined closely, and ensure that the airtightness of whole device and contact are good.
7. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that liquid is entered in the import liquid-accumulating trough (3) of lower substrate (5) by the fluid inlet (1) of upper substrate (6), then
Microchannel region (4) are flowed through, are eventually entered into nano-porous structure region (2), the heat source of entire evaporator is transmitted to by thermally conductive
Nanoporous region (2), and nanoporous region (2) with Base Heat zone position is vertically opposite answers；It is sent out in nanoporous region (2)
The evaporative phase-change process of raw liquid, takes away the heat of heat source, is dispersed into condenser, and extra liquid passes through outlet liquid-accumulating trough
(9) fluid outlet (8) are reached, is again introduced into circulating pump.
8. a kind of microchannel of GaN HEMT device substrate grade described in accordance with the claim 1-nanoporous composite construction evaporation
Device, which is characterized in that upper substrate (6) and lower substrate (5) are etched on GaN HEMT device substrate.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110650614A (en) * | 2019-09-10 | 2020-01-03 | 西安交通大学 | Electronic chip heat dissipation experimental device based on thin film evaporation |
| CN111146167A (en) * | 2020-01-10 | 2020-05-12 | 西安交通大学 | Heat dissipation device and method for pump-driven thin film evaporation high-heat-flux electronic device |
| CN112033196A (en) * | 2020-08-19 | 2020-12-04 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Low-pressure gas-liquid two-phase flow cold plate |
| CN112367805A (en) * | 2020-10-26 | 2021-02-12 | 北京计算机技术及应用研究所 | Double-circulation peak clipping phase change heat exchanger |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110650614A (en) * | 2019-09-10 | 2020-01-03 | 西安交通大学 | Electronic chip heat dissipation experimental device based on thin film evaporation |
| CN111146167A (en) * | 2020-01-10 | 2020-05-12 | 西安交通大学 | Heat dissipation device and method for pump-driven thin film evaporation high-heat-flux electronic device |
| CN112033196A (en) * | 2020-08-19 | 2020-12-04 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Low-pressure gas-liquid two-phase flow cold plate |
| CN112367805A (en) * | 2020-10-26 | 2021-02-12 | 北京计算机技术及应用研究所 | Double-circulation peak clipping phase change heat exchanger |
| CN112367805B (en) * | 2020-10-26 | 2022-12-02 | 北京计算机技术及应用研究所 | Double-circulation peak clipping phase change heat exchanger |
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| CN109979900B (en) | 2024-06-04 |
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