CN109979900B - Micro-channel-nano porous composite structure evaporator of GaN HEMT device substrate level - Google Patents
Micro-channel-nano porous composite structure evaporator of GaN HEMT device substrate level Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 79
- 238000003860 storage Methods 0.000 claims abstract description 37
- 239000012530 fluid Substances 0.000 claims abstract description 33
- 230000017525 heat dissipation Effects 0.000 claims abstract description 20
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 8
- 238000009835 boiling Methods 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000009834 vaporization Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 23
- 230000004907 flux Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000003570 air Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002633 protecting effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000008093 supporting effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000026676 system process Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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Abstract
A micro-channel-nano porous composite structure evaporator of a GaN HEMT device substrate level belongs to the technical field of microelectronic device cooling. The GaN HEMT device is cooled at the substrate level, so that the use of interface bonding materials is reduced, the junction temperature is greatly reduced, and the service life of the GaN HEMT device is prolonged. The application consists of an upper substrate (6) and a lower substrate (5), wherein the upper substrate comprises a nano porous region (2), a fluid inlet (1) and a fluid outlet (8), and the front surface of the lower substrate is carved with a micro-channel region (4), an inlet liquid storage tank (3) and an outlet liquid storage tank (9). The upper substrate (6) and the lower substrate (5) are packaged by adopting a bonding technology, so that good contact performance of the nano porous structure region (2) and the micro channel region (4) is ensured. The device utilizes the phase change evaporation heat dissipation of the liquid in the nano holes, and has the characteristics of stable operation, uniform temperature distribution, less required working medium, low operation pressure and the like.
Description
Technical Field
The invention belongs to the technical field of GaN HEMT device substrate-level cooling, and relates to an evaporator heat dissipation design of a micro-channel-nano porous composite structure.
Background
With the development of advanced material manufacturing technology and high-power electronic device performance, gallium nitride (GaN) High Electron Mobility Transistor (HEMT) devices are applied in various fields such as wireless communication and radar, and particularly in the fields of military and aerospace. However, the extremely high heat flux density problem caused by the method makes the power of the GaN HEMT device limited to one tenth of the potential power output, so as to maintain acceptable junction temperature and prolong the service life of the device. The GaN HEMT device generates sub-millimeter hot spots of 5kW/cm 2 on the plane area of 5-10 mm 2, the multi-hot-zone distribution exists, and the background heat flow on the whole substrate also reaches 1kW/cm 2. Therefore, a novel and efficient heat dissipation device is needed to solve the heat dissipation of the GaN HEMT device, so as to effectively reduce the junction temperature.
At present, heat dissipating devices under active study at home and abroad include: the traditional heat dissipation means mostly adopt solid heat dissipaters (copper, copper compounds, diamond and the like) with high heat conductivity and thermal interface materials (solder, epoxy resin) and then combine air cooling or liquid cooling to achieve the purpose of heat dissipation. The novel integral cooling evaporator in the device removes heat at the substrate level instead of the packaging level of the device, so that the use of interface bonding materials is eliminated, the heat conduction resistance of the device is greatly reduced, and the junction temperature is reduced. Therefore, the design of the phase-change evaporator on the device substrate can substantially improve the performance and the reliability of the GaN HEMT device. The micro-channel and the nano porous structure are combined to form the micro-nano composite structure evaporator, the evaporator device combines the advantages of flowing boiling and pool boiling, not only meets the heat dissipation requirement of high heat flux density, but also can not generate unstable boiling phenomenon, and the capillary force effect of the system in the nano pores is small, so that the consumption of pumping work is greatly reduced, and the evaporator becomes an ideal evaporator heat dissipation structure.
Aiming at the characteristics of high heat flux density and multi-hot zone distribution of a GaN HEMT device, the invention provides the substrate-level micro-channel-nano porous composite structure evaporation radiator, which has the effects of realizing uniform temperature distribution, stable operation, reducing the operation junction temperature of the GaN HEMT device and prolonging the service life of the GaN HEMT device.
Disclosure of Invention
The invention aims to provide an evaporator with a micro-channel-nano porous composite structure, which is used for solving the problems of high heat flux density and multi-hot zone distribution of a GaN HEMT device and providing reliable junction temperature for safe and stable operation of the GaN HEMT device.
The invention designs a novel GaN HEMT device substrate-level micro-channel-nano porous composite evaporator heat dissipation device, which is characterized in that: etching is performed on the GaN HEMT device substrate, so that the use of an interface bonding material is omitted, as shown in FIG. 9; comprises an upper base plate (6) and a lower base plate (5) which are matched together up and down; the center of the upper substrate (6) is provided with a plurality of nano porous structure areas (2), two opposite sides of the nano porous areas (2) are respectively provided with a fluid inlet (1) and a fluid outlet (8), and the fluid inlet (1) and the fluid outlet (8) are through holes and are connected with an external liquid supply pipeline; the nano-porous is a nano through hole array; the nanometer through holes are holes which are communicated with each other up and down, namely inside and outside, of the upper substrate (6);
The periphery of the upper surface of the lower substrate (5) is a flat and smooth area, a groove is arranged in the center of the upper surface, a plurality of micro-channel areas (4) are arranged in the center of the groove, the micro-channel areas (4) are arranged in parallel and in series, an inlet liquid storage groove (3) and an outlet liquid storage groove (9) are respectively arranged on two sides of the micro-channel areas (4) in the groove, each micro-channel area (4) is communicated with the inlet liquid storage groove (3) and the outlet liquid storage groove (9), the inlet liquid storage groove (3) is communicated with the fluid inlet (1) of the upper substrate (6), the outlet liquid storage groove (3) is communicated with the fluid outlet (8) of the upper substrate (6), and the micro-channel areas (4) of the lower substrate (5) are in one-to-one correspondence with the nano porous structure areas (2) of the upper substrate (6);
The micro-channel area (4) is formed by arranging a plurality of micro-channels in parallel, wherein the direction of the channels is along the AB direction, the micro-channels are arranged in parallel along the CD direction perpendicular to the AB direction, and the micro-channel areas (4) are arranged along the AB direction; the nano porous structure region (2) is in direct contact with the micro channel region (4) up and down, preferably, the diameter of the nano through holes of the nano porous region (2) is smaller than the width of the micro channel and the interval dimension between two adjacent micro channels, namely the thickness dimension, and the minimum interval between two nano through holes is smaller than the width of the micro channel and the interval dimension between two adjacent micro channels, namely the thickness dimension.
The top surface of the micro-channel area (4) of the whole evaporator heat dissipation device is flush with the top surface of the peripheral area of the lower substrate (5), the bottom surface of the nano porous structure area (2) is flush with the bottom surface of the upper substrate (6), and the thickness of the nano porous structure area is also in the nano level. The upper substrate (6) and the lower substrate (5) are welded together by adopting a packaging bonding technology, and the micro-channel area (4) and the nano porous structure area (2) are tightly combined, so that the tightness and the contact performance of the whole device are good.
The distribution position and the area size of the heat dissipation device of the novel GaN HEMT device substrate-level micro-channel-nano porous composite evaporator can be determined according to the specific size of the device. In order to clarify the structure of the upper and lower substrates, fig. 1 and 2 show top views of the upper substrate (6) and the lower substrate (5), respectively.
In the invention, liquid enters an inlet liquid storage tank (3) of a lower substrate (5) through a fluid inlet (1) of an upper substrate (6), flows through a micro-channel region (4) and finally enters a nano porous structure region (2), a heat source of the whole evaporator is transferred to the nano porous region (2) through heat conduction, and the position of the nano porous region (2) corresponds to the position of a bottom hot region vertically; the evaporation phase change process of the liquid occurs in the nano porous region (2), heat of a heat source is taken away, the heat is dissipated into the condenser, the redundant liquid reaches the fluid outlet (8) through the outlet liquid storage tank (9), the liquid enters the circulating pump again, the size of the condenser of the circulating system can be adjusted according to actual needs, and a schematic diagram of the circulating system is shown in fig. 8.
The fluid working medium can be air, water, refrigerant or other insulating dielectric fluid respectively, and the material of the system device can be silicon and silicon compound.
The invention has the following advantages and effects:
1. In the invention, liquid enters the inlet liquid storage tank (3) of the lower substrate (5) from the liquid inlet (1) of the upper substrate (6), flows through the micro-channel (4), part of the liquid evaporates in the nano porous structure region (2), and the other part of the liquid reaches the outlet liquid storage tank (9) through the micro-channel (4), so that the temperature distribution of the bottom surface of the lower substrate (5) is more uniform, and the temperature is effectively reduced.
2. The heat dissipation of the GaN HEMT device substrate level is achieved by utilizing the film evaporation phenomenon in the nano holes and the vaporization latent heat of the liquid, and the junction temperature is reduced.
3. The characteristics of high heat flux density and multi-hot zone distribution of the GaN HEMT device are met, and the evaporation capacity can be self-regulated under the action of capillary force according to the heat flux.
4. The liquid is always in an evaporation state in the nano porous structure, and no boiling phenomenon occurs, so that the whole evaporator can safely and stably run.
5. The consumption of pumping power is greatly reduced due to the existence of the capillary force of the nano porous structure, so that the utilization of energy is effectively reduced.
6. The existence of the micro-channel can play a role in supporting and protecting the nano-porous structure, so that the nano-structure is not easy to damage, and meanwhile, the probability of pollution to the nano-structure can be reduced to a certain extent due to the flowing liquid supply effect of the micro-channel.
Drawings
FIG. 1 is a top view of a top substrate of a composite structure of the present invention;
in the figure: 1. liquid inlet, 2, nano porous structure area, 6, upper base plate, 8, liquid outlet.
FIG. 2 is a top view of a lower substrate of the composite structure of the present invention;
In the figure: 3. inlet liquid storage tank 4, microchannel area 5, lower base plate 9, outlet liquid storage tank.
Fig. 3 is a schematic overall structure of the present invention.
In the figure: 1. liquid inlet, 2, nano porous structure area, 3, inlet liquid storage tank, 4, micro channel area, 5, lower base plate, 6, upper base plate, 8, liquid outlet, 9, outlet liquid storage tank.
Fig. 4 is a schematic bottom view of a cooling device of the present invention.
In the figure: 7. a GaN HEMT device or a heating film.
FIG. 5 is a cross-sectional view, A-A, and a partial enlarged view of the overall structure of the device of the present invention.
Fig. 6 is the detailed dimensions (not to scale, unit um) of the micro-channels and nano-porous structures.
FIG. 7 is a schematic view of a specific processing technique of the present invention.
Fig. 8 is a schematic diagram of the principle of a large condenser in the circulation system of the present invention.
Fig. 9 is a schematic diagram of a small condenser in the circulation system of the present invention.
Fig. 10 is a schematic diagram of a GaN HEMT device and evaporator locations.
Detailed Description
The invention is further described below with reference to the accompanying drawings and application of the microchannel-nano porous composite structure evaporator in a GaN HEMT device; the present invention is not limited to the following examples.
The core idea of the invention is as follows: etching is performed on the GaN HEMT device substrate, so that the use of interface bonding materials is omitted, and the junction temperature is reduced. The liquid enters the inlet liquid storage tank 3 of the lower substrate 6 through the through hole of the liquid inlet 1, flows through the micro-channel area 4, and enters the nano-porous structure area 2 from part of the liquid in the micro-channel area 4, and flows into the outlet liquid storage tank 9 from the other part of the liquid. The heat is transferred to the nano porous structure area 2 through the heat conduction of the micro channel wall surface, and the inflowing liquid takes away the heat of the porous area through evaporation phase change, so that the heat dissipation purpose is achieved. And the condenser and the micropump are utilized for recycling.
Etching is performed on the GaN HEMT device substrate, so that the use of interface bonding materials is omitted, and the junction temperature is reduced. Comprises an upper substrate 6 and a lower substrate 5; the center of the upper substrate 6 is a nano porous structure area 2, two sides of the nano porous structure area 2 are respectively provided with a fluid inlet 1 and a fluid outlet 8, and the fluid inlet 1 and the fluid outlet 8 are through holes and are connected with an external liquid pipeline; the periphery of the front surface of the lower substrate 5 is a flat and smooth area, the center of the front surface is provided with a micro-channel area 4, a plurality of micro-channel areas 4 are parallel and side by side, the left end and the right end are provided with an inlet liquid storage tank 3 and an outlet liquid storage tank 9, the micro-channel is communicated with a part flowing through the space between the two liquid storage tanks, the inlet liquid storage tank 3 is communicated with a fluid inlet 1 of the upper substrate 6, the outlet liquid storage tank 3 is communicated with a fluid outlet 8 of the upper substrate 6, and the micro-channel area 4 of the lower substrate 5 vertically corresponds to the nano porous structure area 2 of the upper substrate 6 upwards. The upper substrate 6 and the lower substrate 5 are packaged together by adopting a bonding technology, so that the tightness of the whole device is ensured to be good.
The top surface of the microchannel area 4 is flush with the surface of the top surface area around the lower substrate 5.
The bottom of the nano-porous structure region 2 is flush with the bottom of the upper substrate 6, while the thickness of the nano-porous structure region 2 is also nano-scale.
The nano-porous structure region 2 is closely contacted with the micro-channel region 4, has the same overall apparent area, and the nano-porous structure region 2 is positioned on the upper side of the micro-channel region 4 and vertically corresponds to the bottom hot zone.
The wall thickness of the micro-channel area 4 is about 5um, and the width of the micro-channel is about 20um, so that the supporting and protecting effects of the micro-channel on the nano-porous structure area 2 are guaranteed, and enough liquid supply channels are met, so that the whole device structure is more stable and efficient.
Liquid enters the inlet liquid storage tank 3 of the lower substrate 5 through the fluid inlet 1 of the upper substrate 6, flows through the micro-channel region 4, part of the liquid enters the nano-porous structure region 2, the evaporation phase change process of the liquid occurs at the nano-porous structure region, the heat of the device is taken away, the heat is dissipated to the surrounding environment, and the other part of the liquid passes through the micro-channel region 4 to reach the outlet liquid storage tank 9.
The heat source guides the heat into the nano porous structure area 2 through the heat conduction effect of the wall surface of the micro channel area 4, and the evaporation phase change occurs in the nano porous area, so that the purpose of heat dissipation is achieved.
The size of the condenser of the whole circulation system can be selected according to the actual heat dissipation area, and whether the compressor is adopted or not can be selected according to the actual heat dissipation area so as to reduce the size of the condenser.
Example 1
With the development of the performance of high-power electronic devices, gaN HEMT devices are widely used, and because of the excessive cost of electronic devices, the invention uses a manner of plating a platinum layer heating film on the bottom surface of the lower substrate 6 to simulate the actual heating of the electronic devices, as shown in fig. 4. In practical application, the whole area and the position of the micro-channel and the nano-porous area can be changed according to the size and the distribution characteristics of the hot area of the GaN HEMT device, and in the example, the specific structural size of the micro-channel, the pore diameter and the interval size of the nano-porous area are shown in figure 6. The wall thickness of the micro-channel is 5um, the width of the channel is 20um, the height of the channel is 20um, the aperture of the nano-pore is 0.1um, the interval is 0.2um, and the thickness of the channel is 0.4um.
The invention uses silicon as material, the thickness of silicon wafer is 150um, and the substrate is processed by MEMSMicro-Electromechanical System and NEMSNano-Electromechanical System processes, and the specific process of bonding is shown in figure 7. In the figure, a-1 and b-1 are initial silicon substrates, and then the thicknesses of the liquid inlet 1, the liquid outlet 8 and the porous region of the upper substrate 6 are respectively etched by an ion etching method, as shown in b-2 of fig. 7; at the same time, the micro-channels and inlet and outlet reservoirs of the lower substrate 5 are etched, as shown in fig. 7 a-2. The reduced thickness region of b-2 of fig. 7 is then subjected to electron beam lithography to obtain a nanoporous structure, as shown in b-3 of fig. 7. The fluid inlet 1 and fluid outlet 8 of the upper substrate 6 are then directly opposite the inlet reservoir 3 and outlet reservoir 9 of the lower substrate 5, respectively, and the a-2 and b-3 of fig. 7 are then encapsulated together using silicon-silicon bonding techniques. And plating a layer of Pt heating layer 7 with the thickness of 0.1um on the bottom of the packaged device by utilizing a magnetron sputtering technology, and leading out two electrodes for connecting a circuit, thereby completing the manufacturing and processing of the whole experimental evaporator.
Insulating fluid is used as working medium, enters the inlet liquid storage tank 3 from the liquid inlet 1, flows through the micro-channel area 4, and is subjected to phase change evaporation in a part of the fluid nano porous structure area 2, and the other part of the fluid nano porous structure area flows through the micro-channel area 4 and enters the outlet liquid storage tank 9. The heat is led into the porous structure through the micro-channel by the heating film 7 at the bottom of the lower substrate 5, and then the heat is carried away by the phase change of the liquid in the pores. The bottom surface of the lower substrate 5 is heated to have good temperature uniformity at each position, so that the heat dissipation requirement of the GaN HEMT device is met, the junction temperature is reduced, and the service life of the device is prolonged. The size of the condenser of the whole circulation system can be adjusted according to actual needs, and the system schematic diagram is shown in fig. 8 and 9.
In summary, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. The micro-channel-nano porous composite structure evaporator of the GaN HEMT device substrate level is characterized by comprising an upper substrate (6) and a lower substrate (5) which are matched together up and down; the center of the upper substrate (6) is provided with a plurality of nano porous structure areas (2), two opposite sides of the nano porous structure areas (2) are respectively provided with a fluid inlet (1) and a fluid outlet (8), and the fluid inlet (1) and the fluid outlet (8) are through holes and are connected with an external liquid supply pipeline; the nano-porous is a nano through hole array; the nanometer through holes are holes which are communicated with each other up and down, namely inside and outside, of the upper substrate (6);
The periphery of the upper surface of the lower substrate (5) is a flat and smooth area, a groove is arranged in the center of the upper surface, a plurality of micro-channel areas (4) are arranged in the center of the groove, the micro-channel areas (4) are arranged in parallel and in series, an inlet liquid storage groove (3) and an outlet liquid storage groove (9) are respectively arranged at two sides of the micro-channel areas (4) in the groove, each micro-channel area (4) is communicated with the inlet liquid storage groove (3) and the outlet liquid storage groove (9), the inlet liquid storage groove (3) is communicated with the fluid inlet (1) of the upper substrate (6), the outlet liquid storage groove (9) is communicated with the fluid outlet (8) of the upper substrate (6), and the micro-channel areas (4) of the lower substrate (5) are in one-to-one correspondence with the nano porous structure areas (2) of the upper substrate (6);
The top surface of a micro-channel area (4) of the whole evaporator heat dissipation device is flush with the top surface of the peripheral area of a lower substrate (5), the bottom surface of a nano porous structure area (2) is flush with the bottom surface of an upper substrate (6), and the thickness of the nano porous structure area is also in the nano level; the upper substrate (6) and the lower substrate (5) are welded together by adopting a packaging bonding technology, and the micro-channel area (4) and the nano-porous structure area (2) are also tightly combined;
The micro-channel area (4) is formed by arranging a plurality of micro-channels in parallel, wherein the direction of the channels is along the AB direction, the micro-channels are arranged in parallel along the CD direction perpendicular to the AB direction, and the micro-channel areas (4) are arranged along the AB direction; the nano porous structure area (2) is in direct contact with the micro channel area (4) up and down;
The diameter of the nanometer through holes of the nanometer porous structure area (2) is smaller than the width of the micro-channels and the interval dimension between two adjacent micro-channels, namely the thickness dimension, and the minimum interval between the two nanometer through holes is smaller than the width of the micro-channels and the interval dimension between the two adjacent micro-channels, namely the thickness dimension;
Liquid enters an inlet liquid storage tank (3) of a lower substrate (5) through a fluid inlet (1) of an upper substrate (6), flows through a micro-channel region (4) and finally enters a nano porous structure region (2), a heat source of the whole evaporator is transferred to the nano porous structure region (2) through heat conduction, and the position of the nano porous structure region (2) corresponds to the position of a bottom hot region vertically; the evaporation phase change process of the liquid occurs in the nano porous structure area (2), heat of a heat source is taken away, the heat is dissipated into a condenser, and the redundant liquid reaches a fluid outlet (8) through an outlet liquid storage tank (9) and enters a circulating pump again;
The upper substrate (6) and the lower substrate (5) are etched on the GaN HEMT device substrate;
Liquid enters an inlet liquid storage tank (3) of a lower substrate (5) from a fluid inlet (1) of an upper substrate (6), flows through a micro-channel (4), part of the liquid evaporates in a nano-porous structure area (2), and the other part of the liquid reaches an outlet liquid storage tank (9) through the micro-channel (4), so that the temperature distribution of the bottom surface of the lower substrate (5) is more uniform, and the temperature is effectively reduced;
The heat dissipation of the GaN HEMT device substrate level is achieved by utilizing the film evaporation phenomenon in the nano holes and the vaporization latent heat of the liquid, so that the junction temperature is reduced;
the liquid is always in an evaporation state in the nano porous structure, and no boiling phenomenon occurs, so that the whole evaporator can safely and stably run.
2. The micro-channel-nano-porous composite structure evaporator of the substrate level of the GaN HEMT device according to claim 1, wherein,
The channel wall thickness of the microchannel region was 5um and the channel width was 20um.
3. The micro-channel-nano-porous composite structure evaporator of the substrate level of the GaN HEMT device according to claim 1, wherein,
The top surface of the micro-channel area (4) of the whole evaporator heat dissipation device is flush with the top surface of the peripheral area of the lower substrate (5), the bottom surface of the nano porous structure area (2) is flush with the bottom surface of the upper substrate (6), and the thickness of the nano porous structure area is also in the nano level.
4. The micro-channel-nano-porous composite structure evaporator of the substrate level of the GaN HEMT device according to claim 1, wherein,
The upper substrate (6) and the lower substrate (5) are welded together by adopting a packaging bonding technology, and the micro-channel area (4) and the nano porous structure area (2) are tightly combined, so that the tightness and the contact performance of the whole device are good.
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| CN110650614B (en) * | 2019-09-10 | 2020-08-18 | 西安交通大学 | Electronic chip heat dissipation experimental device based on thin film evaporation |
| CN111146167B (en) * | 2020-01-10 | 2021-08-13 | 西安交通大学 | Pump-driven film evaporation third-generation semiconductor electronic device heat dissipation device and method |
| CN112033196B (en) * | 2020-08-19 | 2022-02-18 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Low-pressure gas-liquid two-phase flow cold plate |
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