CN109671456B - 记忆体装置 - Google Patents
记忆体装置 Download PDFInfo
- Publication number
- CN109671456B CN109671456B CN201811582708.7A CN201811582708A CN109671456B CN 109671456 B CN109671456 B CN 109671456B CN 201811582708 A CN201811582708 A CN 201811582708A CN 109671456 B CN109671456 B CN 109671456B
- Authority
- CN
- China
- Prior art keywords
- memory
- memory cell
- circuit
- decoding circuit
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000015654 memory Effects 0.000 claims abstract description 328
- 230000009977 dual effect Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 101001059713 Homo sapiens Inner nuclear membrane protein Man1 Proteins 0.000 description 1
- 102100028799 Inner nuclear membrane protein Man1 Human genes 0.000 description 1
- 102000000582 Retinoblastoma-Like Protein p107 Human genes 0.000 description 1
- 108010002342 Retinoblastoma-Like Protein p107 Proteins 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (14)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811582708.7A CN109671456B (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
US16/362,719 US10692571B1 (en) | 2018-12-24 | 2019-03-25 | Memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811582708.7A CN109671456B (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109671456A CN109671456A (zh) | 2019-04-23 |
CN109671456B true CN109671456B (zh) | 2023-09-22 |
Family
ID=66146881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811582708.7A Active CN109671456B (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10692571B1 (zh) |
CN (1) | CN109671456B (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200746139A (en) * | 2006-04-21 | 2007-12-16 | Freescale Semiconductor Inc | MRAM array with reference cell row and method of operation |
CN101159162A (zh) * | 2006-10-06 | 2008-04-09 | 国际商业机器公司 | 存储器***及其操作方法 |
TW201331950A (zh) * | 2012-01-18 | 2013-08-01 | United Microelectronics Corp | 記憶體裝置以及讀取位元線的電壓判讀方法 |
TW201401288A (zh) * | 2012-06-21 | 2014-01-01 | Ememory Technology Inc | 具有參考字元線之快閃記憶體裝置 |
CN104718576A (zh) * | 2012-10-15 | 2015-06-17 | 马维尔国际贸易有限公司 | 用于读取电阻性随机访问存储器(rram)单元的***和方法 |
CN104978988A (zh) * | 2015-05-22 | 2015-10-14 | 宁波时代全芯科技有限公司 | 记忆体装置及其驱动方法 |
TW201629977A (zh) * | 2014-11-04 | 2016-08-16 | 惠普發展公司有限責任合夥企業 | 記憶體陣列驅動器 |
CN107045878A (zh) * | 2015-09-18 | 2017-08-15 | 台湾积体电路制造股份有限公司 | 双轨存储器、存储器宏以及相关的混合供电方法 |
CN209103823U (zh) * | 2018-12-24 | 2019-07-12 | 江苏时代全芯存储科技股份有限公司 | 记忆体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8068382B2 (en) * | 2009-08-05 | 2011-11-29 | Mosaid Technologies Incorporated | Semiconductor memory with multiple wordline selection |
US8064248B2 (en) * | 2009-09-17 | 2011-11-22 | Macronix International Co., Ltd. | 2T2R-1T1R mix mode phase change memory array |
US20140063927A1 (en) * | 2012-08-28 | 2014-03-06 | Being Advanced Memory Corporation | Cell-Generated Reference in Phase Change Memory |
US9165629B2 (en) * | 2013-03-12 | 2015-10-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for MRAM sense reference trimming |
US10163503B2 (en) * | 2015-11-16 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM array with current limiting element to enable efficient forming operation |
-
2018
- 2018-12-24 CN CN201811582708.7A patent/CN109671456B/zh active Active
-
2019
- 2019-03-25 US US16/362,719 patent/US10692571B1/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200746139A (en) * | 2006-04-21 | 2007-12-16 | Freescale Semiconductor Inc | MRAM array with reference cell row and method of operation |
CN101159162A (zh) * | 2006-10-06 | 2008-04-09 | 国际商业机器公司 | 存储器***及其操作方法 |
TW201331950A (zh) * | 2012-01-18 | 2013-08-01 | United Microelectronics Corp | 記憶體裝置以及讀取位元線的電壓判讀方法 |
TW201401288A (zh) * | 2012-06-21 | 2014-01-01 | Ememory Technology Inc | 具有參考字元線之快閃記憶體裝置 |
CN104718576A (zh) * | 2012-10-15 | 2015-06-17 | 马维尔国际贸易有限公司 | 用于读取电阻性随机访问存储器(rram)单元的***和方法 |
TW201629977A (zh) * | 2014-11-04 | 2016-08-16 | 惠普發展公司有限責任合夥企業 | 記憶體陣列驅動器 |
CN104978988A (zh) * | 2015-05-22 | 2015-10-14 | 宁波时代全芯科技有限公司 | 记忆体装置及其驱动方法 |
CN107045878A (zh) * | 2015-09-18 | 2017-08-15 | 台湾积体电路制造股份有限公司 | 双轨存储器、存储器宏以及相关的混合供电方法 |
CN209103823U (zh) * | 2018-12-24 | 2019-07-12 | 江苏时代全芯存储科技股份有限公司 | 记忆体装置 |
Also Published As
Publication number | Publication date |
---|---|
US10692571B1 (en) | 2020-06-23 |
CN109671456A (zh) | 2019-04-23 |
US20200202929A1 (en) | 2020-06-25 |
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PB01 | Publication | ||
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CB02 | Change of applicant information | ||
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Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Applicant after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant after: QUANXIN TECHNOLOGY Co.,Ltd. Address before: 223300 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: Jiangsu times all core storage technology Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Applicant after: Beijing times full core storage technology Co.,Ltd. Applicant after: QUANXIN TECHNOLOGY Co.,Ltd. Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Applicant before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20221125 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Applicant after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant before: Beijing times full core storage technology Co.,Ltd. Applicant before: QUANXIN TECHNOLOGY Co.,Ltd. |
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