CN209103823U - 记忆体装置 - Google Patents
记忆体装置 Download PDFInfo
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- CN209103823U CN209103823U CN201822173521.3U CN201822173521U CN209103823U CN 209103823 U CN209103823 U CN 209103823U CN 201822173521 U CN201822173521 U CN 201822173521U CN 209103823 U CN209103823 U CN 209103823U
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- 230000015654 memory Effects 0.000 claims abstract description 326
- 230000009977 dual effect Effects 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 101001059713 Homo sapiens Inner nuclear membrane protein Man1 Proteins 0.000 description 2
- 102100028799 Inner nuclear membrane protein Man1 Human genes 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 101150076564 MAN2 gene Proteins 0.000 description 1
- 101150019725 MAN3 gene Proteins 0.000 description 1
- 102000000582 Retinoblastoma-Like Protein p107 Human genes 0.000 description 1
- 108010002342 Retinoblastoma-Like Protein p107 Proteins 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201822173521.3U CN209103823U (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
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CN201822173521.3U CN209103823U (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
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CN209103823U true CN209103823U (zh) | 2019-07-12 |
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CN201822173521.3U Active CN209103823U (zh) | 2018-12-24 | 2018-12-24 | 记忆体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109671456A (zh) * | 2018-12-24 | 2019-04-23 | 江苏时代全芯存储科技有限公司 | 记忆体装置 |
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2018
- 2018-12-24 CN CN201822173521.3U patent/CN209103823U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109671456A (zh) * | 2018-12-24 | 2019-04-23 | 江苏时代全芯存储科技有限公司 | 记忆体装置 |
CN109671456B (zh) * | 2018-12-24 | 2023-09-22 | 北京时代全芯存储技术股份有限公司 | 记忆体装置 |
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GR01 | Patent grant | ||
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Patentee after: QUANXIN TECHNOLOGY Co.,Ltd. Address before: 223300 No. 601 East Changjiang Road, Huaiyin District, Huaian City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: QUANXIN TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221129 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Patentee before: Beijing times full core storage technology Co.,Ltd. Patentee before: QUANXIN TECHNOLOGY Co.,Ltd. |