CN109270626A - A kind of tunable gratings filter and preparation method based on SOI wafer - Google Patents
A kind of tunable gratings filter and preparation method based on SOI wafer Download PDFInfo
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- CN109270626A CN109270626A CN201811433756.XA CN201811433756A CN109270626A CN 109270626 A CN109270626 A CN 109270626A CN 201811433756 A CN201811433756 A CN 201811433756A CN 109270626 A CN109270626 A CN 109270626A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12109—Filter
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Abstract
The invention discloses a kind of tunable gratings filter and preparation method based on SOI wafer, including SOI wafer, the top layer silicon of SOI wafer is cut through rectangular silicon that form interval, periodic and grating cutting completely, filled media material in the cutting sputters certain thickness metal layer as electrode on the dielectric material.The full etching grating that the present invention uses does not have the problem of etching depth, and by the way that dielectric material is added between grating cutting, reduce the refringence between grating and cutting, to obtain relatively narrow reflected waveband, reaching light engraving erosion can achieve the effect that, can production synchronous with grating for the rectangular waveguide etched completely.
Description
Technical field
The invention discloses a kind of tunable gratings filter and preparation method based on SOI wafer, is related to belonging to photon tune
Control device, micro-optoelectronic device field.
Background technique
Filter plays vital effect in optical communications, be mainly used to realize screening to wavelength of optical signal and
Operation, is divided into bandpass-type and with resistance type.Wavelength signals required for bandpass-type mainly selects pass through, and being then with resistance type will be special
The long signal jam of standing wave.Filter is widely used in optical transport network, and filter is same in integrated silicon-based optical waveguide
Sample is very important.It can be used for signal behavior, wavelength-division multiplex and the demultiplexing of specific wavelength, filters out the (ginger such as noise signal
Build the Zhejiang research [D] of winged silicon substrate multimode waveguide grating filter: Zhejiang University, 2018).
Various filters have been had already appeared currently on the market, and such as: (Lyu is big for F-P cavity (Fabry-Perot) filter
The Wuhan research and development [D] of beautiful high-performance F-P tunable optic filter: Wuhan University of Technology, 2011), dielectric film filtering
Device (Multilayer Dielectric Thin Film Filter, MDTFF) (Nonaka S, SudaT, Oda H.
Microprocesses and Nanotechnology Conference.2001 International.2001,206-
207), array waveguide grating (Arrayed Waveguide Grating, AWG) (Liu Yuan silica-based nanowire Waveguide array light
The Wuhan research [D] of grid: the Central China University of Science and Technology, 2011), acousto-optic tunable filter (Acousto Optic Tunable
Filter, AOTF) (Shanxi research [D] of high rosy clouds acousto-optic tunable filter: Northcentral University, 2015), all -fiber Mach-
(Liu Zhi wave is based on optical fiber mach-increasing to Zeng Deer interferometer (Mach-Zehnder Interferometer, MZI) filter
The filter and its sensing characteristics of Dare interferometer study Beijing [D]: Beijing Jiaotong University, 2015), micro-ring resonator filter
(the auspicious of Xu Xiao studies the Lanzhou [D] based on the filtering characteristic of microring resonator array: Lanzhou Jiaotong University, 2017), fiber Bragg
Grating (Fiber Bragg Grating, FBG) filter, in addition there are balzed grating, holographic grating etc., (all will cascade horse
The Sichuan design studies [D] of conspicuous-Zeng Deer interferometer type bandpass filter: Southwest Jiaotong University, 2006).But these are common
Optical filter suffer from respective disadvantage: F-P cavity filter is mainly that its stability is poor and Sidelobe Suppression is than low；Multilayer
Dielectric thin-film filters are then difficult to be fabricated to narrow band filter, and can only be directed to a certain specific wavelength, and flexibility is poor；Plane
Arrayed waveguide filters are difficult to and intelligent acess, higher cost and the biggish substrate of needs；Cascade connection type MZI type
Its total Bandwidth-Constrained of filter is in its FSR, and its size is larger, is applied to produce very big limitation；There are two MRR
Basic disadvantage: first is that its spectral response is uneven, being distributed in the Lorentz of convex-shaped, when device is because of fabrication error or because of temperature change
When changing and causing spectral drift, device cannot normally work；Second is that the disresonance light in its spectrum is stronger, this makes MRR's
Crosstalk is larger.
Since Bragg grating bandwidth facilitates, control, wavelength stability is good, simple process, and limits without FSR, can cover
Entire C-band is covered, has big advantage for other filtering methods.Therefore, Bragg grating filter is in Integrated Light
Wavelength-division multiplex, narrow bandwidth filter in waveguide etc. have been widely used.
Having at present some is then carried out using grating of the temperature control module to encapsulation by being packaged to Bragg grating
To achieve the purpose that regulating and controlling temperature, to change wavelength, (Chen Fu prosperous high precision temperature control tunable gratings filter is set for temperature control
The meter Fujian [J]: Minnan Normal University's physics and Electronics and Information Engineering system, 2013).There are also one is one layer is added on Si
Silica, while by silica-filled entering light grid cutting part, temperature control is carried out by being heated to uppermost silica.But
These methods have following disadvantage: (1) controlling temperature using temperature controlling chip, structure is complicated and higher cost；(2) if grating
Using full etching, then not can guarantee with relatively narrow reflected waveband.(3) right using the structure heating of covering silicon oxide layer
The regulation efficiency of packing material refractive index is lower, has the non-uniform possibility of heating, changes so as to cause effective refractive index.
It (4) and is silicon oxide-wrapped entirely around waveguide, so that waveguide is deteriorated to the constraint of light.
Based on problem above, the present invention uses the Bragg waveguide grating with dielectric fill material, can be by resonance wave
Optical signal near long is coupled as the mode of opposite direction transmission, realizes that straight-through end is bandstop filter, reflection end is bandpass filtering
Device.Using the structure for adding thermo electric material between the Bragg grating of full etching, both can be difficult to control to avoid etching depth
System, and can guarantee relatively low refringence to guarantee to possess relatively narrow reflected waveband.
Summary of the invention
The present invention the defects of for above-mentioned background technique, provide a kind of tunable gratings filter based on SOI wafer and
Preparation method, the present invention use the Bragg waveguide grating with dielectric fill material, the light near resonance wavelength can be believed
It number is coupled as the mode of opposite direction transmission, realizes that straight-through end is bandstop filter, reflection end is bandpass filter.
To achieve the above object, The technical solution adopted by the invention is as follows: a kind of tunable gratings filter based on SOI wafer
Wave device, including SOI wafer；The top layer silicon of SOI wafer forms rectangular silicon and grating being spaced, being periodically arranged by full etching and carves
Slot, filled media material in the cutting sputter certain thickness metal layer as heating electrode on the dielectric material.
Further, the dielectric material is thermo electric material, and the thermo electric material is smaller than the refractive index of silicon.
Further, the silicon oxide layer of SOI wafer is with a thickness of in the market common 1, 2, the thickness of 10 μm of equal BOX layers
Degree, the top layer silicon of SOI wafer with a thickness of 220nm, the thickness of the common single mode multimode lightguide such as 340nm.
A kind of preparation method of the tunable gratings filter based on SOI wafer, comprising the following steps:
Step 1: carrying out cleaning, drying to SOI wafer using water, acetone or alcohol, removes the pollutant on surface, and enhancing surface is viscous
Attached property；
Step 2: by photoetching or e-beam lithography that mask layer is graphical in silicon surface mask film covering layer；
Step 3: carrying out the full etching of top layer silicon with dry or wet, produces waveguide and grating cutting；
Step 4: removal mask layer, between dielectric material is filled into grating cutting, and dielectric material surrounds the four of grating cutting
Week；
Step 5: the preparation heating metal electrode on dielectric material.
Further, the SOI wafer includes SOI wafer one and SOI wafer two, the corresponding each layer of the SOI wafer one
Thickness are as follows: top layer silicon is with a thickness of 220nm, and silicon oxide layer is with a thickness of 2, each thickness degree of the correspondence of the SOI wafer two are as follows: top
Layer silicon thickness is 340nm, and silicon oxide layer is with a thickness of 10, the waveguide of the SOI wafer one is the silicon single mode square etched completely
Shape waveguide, the waveguide of SOI wafer two are the silicon multimode rectangular waveguide etched completely.
Further, in the top layer silicon face spin coating photoresist of SOI wafer one in step 2, with grating after soft baking
Exposure mask is done with the mask plate of waveguide pattern, the photoresist is mask layer, and photoresist is exposed, and develops, makes photoresist figure
Then shape is dried at 115 DEG C ~ 120 DEG C；
Or with physical deposition method by 2 μ m-thick silicon oxide depositions in two top layer silicon face of SOI wafer, and photoresist is spun on
Exposure mask is done with the mask plate with grating and waveguide pattern in silicon oxide layer surface, and the silica is mask layer, is then exposed
Light, development, is then dried at 115 DEG C ~ 120 DEG C, then by the silicon oxide layer of wet etching removal exposure, makes silicon oxide layer figure
Then shape removes photoresist；
In step 3: the full etching of the top layer silicon of SOI wafer one is carried out with dry method, produce waveguiding structure and grating cutting or
The full etching that two top layer silicon of SOI wafer is carried out with wet process is produced waveguiding structure and grating cutting, and is dried；
Further, in step 4, the photoresist and mask layer in SOI wafer one are removed with wet process, by poly dimethyl after drying
Siloxanes (PDMS) is poured between one grating cutting of SOI wafer, and drying makes PDMS solidification or vapor deposition with grating cutting
Depth is the alumina medium of thickness, removes silicon oxide masking film, while lift-off aluminium oxide.
Further, step 5 includes: spin coating photoresist, after carrying out drying glue, carries out alignment with the photoetching in step 2, shows
Shadow exposes the specific region for wanting deposit metal electrodes, drying；Sputter certain thickness Ni/Au double layer of metal, lift-off
Metal on stripping photoresist and photoresist finally leaves metal electrode in specific region；Drying.
The structure of tunable gratings filter of the invention is made of waveguide section, grating region, temperature control region, and waveguide section is
It is realized in top layer silicon by produced by micro processing waveguiding structure, can be the single mode or multimode waveguide for different-waveband, grating
Area is to prepare the grating cutting of complete etching type by micro-nano technology technique to realize, is made of certain amount of cycles,
Its design parameter be according to bragg wavelength principle and specific material parameter and filtering wave band design, temperature controlled region by dielectric material and
Heating electrode is formed, and wherein dielectric material is filled in light generally than the thermo electric material that Si refractive index is small and is not much different
In grid cutting, electrode fabrication is on dielectric material, near grating cutting, efficiently controls medium refraction with temperature to reach
Rate, and then regulate and control the purpose of reflection wavelength.
Bragg grating (FBG) is a kind of periodicity, the micro-structure as wavelength-selective mirror.Only bragg wavelength
Light can be by optical grating reflection, and remaining light wave will continue through, and lose very little.
Bragg wavelength () be by the period (Λ) of micro-structure and effective refractive index () come what is defined.It is packed into the thermo electric material smaller than the refractive index of Si in the grating groove of etching, reduces silicon and cutting
Refringence heats the temperature for changing thermo electric material by electric current, thus change the material i.e. refractive index of grating external agency, electricity
The variation of hot material refractive index further causes Bragg grating effective refractive indexVariation, thus reach change Prague
The purpose of wavelength.
Sensitivity to temperature is one of the characteristic of Bragg grating, its temperature dependency is determined by following equation:
WhereinIt is the heat-sensing coefficient of Bragg grating；It is thermal expansion coefficient；It is thermo-optical coeffecient (the refraction system of temperature
Number).The temperature sensitivity of 1550nm Bragg grating is=9.8。As raster center wavelength shift.
The present invention changes grating temperature by thermo electric material, so as to cause the drift of bragg wavelength, to reach reflection
The adjustable function of target wavelength light.
Beneficial effect
1. the full etching grating that the present invention uses does not have the problem of etching depth bad control, and by being added between grating cutting
Dielectric material reduces the refringence between grating and cutting, to obtain relatively narrow reflected waveband, reaching light engraving erosion can reach
The effect arrived, and can production synchronous with grating for the rectangular waveguide etched completely.
2. using filled media heating method regulated and controled, directly by electrode to the medium being filled among grating into
Row heating, heating efficiency is high, and regulating effect is good, also ensures being heated evenly for medium.
3. the alternative of packing material makes the design of device more flexible, can be needed for different wave bands and bandwidth
It asks and carries out material selection, and structure and technique are relatively easy, cost is relatively low.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the structural scheme of mechanism in the direction A-A in Fig. 1；
Fig. 3 is a kind of implementation flow chart of preparation method of the present invention.
1- top layer silicon, 2- silicon oxide layer, 3- silicon substrate, 4- dielectric material, 5- electrode.
Specific embodiment
The implementation of technical solution is described in further detail with reference to the accompanying drawing.Following embodiment is only used for more clear
Illustrate to Chu technical solution of the present invention, and not intended to limit the protection scope of the present invention.
A kind of embodiment as shown in Figure 1 and 2, a kind of tunable gratings filter based on SOI wafer of the present invention, including SOI
Chip, the SOI wafer include top layer silicon 1, silicon oxide layer 2 and silicon substrate 3；Between the top layer silicon 1 of SOI wafer is formed by full etching
Every, the periodically rectangular silicon that is arranged and grating cutting, filled media material 4 in the cutting splashes on the dielectric material 4
Certain thickness metal layer is penetrated as electrode 5, the metal layer is Ni/Au double layer of metal, and the dielectric material 4 is electric heating material
Material, the thermo electric material is smaller than the refractive index of silicon, and the silicon oxide layer of SOI wafer is with a thickness of common 1 μm in the market, 2, 10 μ
The thickness of the BOX layers such as m, the top layer silicon 1 of SOI wafer with a thickness of 220nm, the thickness of the common single mode multimode lightguide such as 340nm.
A kind of implementation flow chart of preparation method as shown in Figure 3, a are starting SOI material；B is the structure after whirl coating；C is
It is exposed by mask plate by the process of mask pattern；D is the structure after development；E is the structure after full etching；F is removal
Device architecture after photoresist；G is the structure filled after thermo electric material；H is the final structure installed after electrode；
A kind of embodiment of preparation method, starting material are SOI wafer, corresponding each thickness degree are as follows: top layer silicon with a thickness of 220nm,
Silicon oxide layer is with a thickness of 2 μm, dielectric material PDMS, electrode Ni/Au.Waveguide is the silicon single mode rectangular waveguide etched completely,
Grating is the grating etched completely.
Fabrication processing is as follows:
Step 1: carrying out the preprocessing process such as cleaning in water, acetone cleaning, ethyl alcohol cleaning, drying for SOI wafer, then spare.
2 μ m-thick photoresists: being spun on the silicon surface of SOI by step 2, then soft at 90 DEG C to dry 45 seconds；With with light
The mask plate of grid and waveguide pattern does mask layer, is exposed, development, then rear under 120 DEG C of environment to dry 1min.
Step 3: carrying out the full etching of top layer silicon with dry method, produces waveguiding structure and grating cutting；Light is removed with wet process
Photoresist, drying.
Step 4: it is rear to dry between PDMS is poured into grating cutting, solidify PDMS.
Step 5: 8 μm of thick photoresists of spin coating after carrying out drying glue, carry out alignment with the photoetching in step 2, development is exposed
The specific region of deposit metal electrodes is wanted, is dried；Certain thickness Ni/Au double layer of metal is sputtered, lift-off removes light
Metal in photoresist and photoresist finally leaves metal electrode in specific region；Drying.
The embodiment of another preparation method, starting material are SOI wafer, corresponding each thickness degree are as follows: etched diffraction grating layer silicon
With a thickness of 340nm, silicon oxide layer is with a thickness of 10 μm, and dielectric material is aluminium oxide, electrode Ni/Au, and waveguide etches completely
Silicon multimode rectangular waveguide, grating are the grating etched completely.
Fabrication processing is as follows:
Step 1: carrying out the preprocessing process such as cleaning in water, acetone cleaning, ethyl alcohol cleaning, drying for SOI wafer, then spare.
Step 2: with physical deposition method by 2 μ m-thick silicon oxide depositions in the silicon surface of SOI；2 μ m-thick photoresists are revolved
It is applied to silicon oxide layer surface, it is then soft at 90 DEG C to dry 45 seconds；Exposure mask is done with the mask plate of certain figure, is exposed, is developed,
Then rear under 115 DEG C of environment to dry 1min, with the silica of wet etching removal exposure, keeps silica graphical, then remove
Photoresist.
Step 3: carrying out the full etching of top layer silicon with wet process, produces waveguide optical grating cutting, drying.
Step 4: vapor deposition removes silicon oxide masking film, simultaneously using grating groove depth as the alumina medium of thickness
Lift-off aluminium oxide.
Step 5: 8 μm of thick photoresists of spin coating after carrying out drying glue, carry out alignment with the photoetching in step 2, development is exposed
The specific region of deposit metal electrodes is wanted, is dried；Certain thickness Ni/Au double layer of metal is sputtered, lift-off removes light
Metal in photoresist and photoresist finally leaves metal electrode in specific region；Drying.
The full etching grating that the present invention uses does not have the problem of etching depth, and by the way that medium material is added between grating cutting
Material reduces the refringence between grating and cutting, to obtain relatively narrow reflected waveband, reaches the attainable effect of light engraving erosion institute
Fruit, and can production synchronous with grating for the rectangular waveguide etched completely.
The present invention is regulated and controled using the method for filled media heating, directly by electrode to Jie being filled among grating
Matter is heated, and heating efficiency is high, and regulating effect is good, also ensures being heated evenly for medium.
The alternative of packing material of the present invention makes the design of device more flexible, can be directed to different wave band and band
Wide demand carries out material selection, and structure and technique are relatively easy, and cost is relatively low.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of tunable gratings filter based on SOI wafer, which is characterized in that including SOI wafer, the top layer silicon of SOI wafer
Rectangular silicon being spaced, being periodically arranged and grating cutting, filled media material in the cutting, described are formed by full etching
Certain thickness metal layer is prepared on dielectric material as heating electrode, the electrode position is located at rectangular silicon and grating cutting
Two sides.
2. a kind of tunable gratings filter based on SOI wafer according to claim 1, which is characterized in that the medium
Material is thermo electric material, and the thermo electric material is smaller than the refractive index of silicon.
3. a kind of preparation method of the tunable gratings filter based on SOI wafer, which comprises the following steps:
Step 1: cleaning, drying is carried out to SOI wafer；
Step 2: being arranged mask layer in the top layer silicon face of SOI wafer, by photoetching or e-beam lithography by mask layer figure
Shape；
Step 3: carrying out the full etching of top layer silicon, produces the slab waveguide being periodically arranged and grating cutting；
Step 4: dielectric material is filled between grating cutting by removal mask layer；
Step 5: the preparation heating metal electrode on dielectric material.
4. a kind of preparation method of tunable gratings filter based on SOI wafer according to claim 3, feature exist
In then spare by the preprocessing process that SOI wafer carries out water, acetone or alcohol is cleaned, dried again in step 1.
5. a kind of preparation method of tunable gratings filter based on SOI wafer according to claim 3, feature exist
In in step 2, in the top layer silicon face spin coating photoresist of SOI wafer one, with covering with grating and waveguide pattern after soft baking
Film version does exposure mask, and the photoresist is mask layer, and photoresist is exposed, and develops, makes photoetching offset plate figure, then 115
DEG C ~ 120 DEG C at dry.
6. a kind of preparation method of tunable gratings filter based on SOI wafer according to claim 3, feature exist
In in step 3, the full etching of the top layer silicon of SOI wafer one is carried out with dry method, produces waveguiding structure and grating cutting.
7. a kind of preparation method of tunable gratings filter based on SOI wafer according to claim 3, feature exist
In, in step 4, with wet process removal SOI wafer one on photoresist and mask layer, dielectric material PDMS is poured into after drying
Between one grating cutting of SOI wafer, and drying solidifies PDMS.
8. a kind of preparation method of tunable gratings filter based on SOI wafer according to claim 3, feature exist
In step 5 includes: spin coating photoresist, after carrying out drying glue, carries out alignment with the photoetching in step 2, development, which is exposed, will deposit gold
Belong to the specific region of electrode, drying；Certain thickness double layer of metal is sputtered, on lift-off stripping photoresist and photoresist
Metal finally leaves metal electrode in specific region；Drying.
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| CN110361445A (en) * | 2019-07-30 | 2019-10-22 | 西安交通大学 | A kind of highly selective CMUTs gas sensor of multi-parameter and its use and preparation method |
| CN112612148A (en) * | 2020-12-09 | 2021-04-06 | 中国科学院微电子研究所 | Optical device and manufacturing method thereof |
| CN115842241A (en) * | 2022-12-23 | 2023-03-24 | 上海铭锟半导体有限公司 | Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1845484A (en) * | 2005-04-08 | 2006-10-11 | 中国科学院半导体研究所 | Structure of realizing ROADM and method for manufacturing same |
| CN101738679A (en) * | 2008-11-21 | 2010-06-16 | 北京航空航天大学 | Slit waveguide-based Bragg grating filter |
| CN102193150A (en) * | 2011-04-27 | 2011-09-21 | 暨南大学 | Method and device for preparing adjustable edge filter based on all-fiber technology |
| CN102565955A (en) * | 2012-01-16 | 2012-07-11 | 中国科学院半导体研究所 | Electric tunable grating coupler |
| CN102621714A (en) * | 2012-04-27 | 2012-08-01 | 吉林大学 | Silicon on insulator (SOI) and polymer mixture integrated Fabry-Perot (F-P) resonant cavity tunable optical filter and preparation method thereof |
| CN102662218A (en) * | 2012-05-31 | 2012-09-12 | 东南大学 | Wrinkle type apodization waveguide Bragg grating filter and manufacturing method thereof |
| CN103048715A (en) * | 2013-01-04 | 2013-04-17 | 南京邮电大学 | Planar sub-wavelength aperiodic high-contrast grating and preparation method thereof |
| CN103197450A (en) * | 2013-04-11 | 2013-07-10 | 上海理工大学 | Polarization-independent filter based on guided-mode resonance liquid crystal structure |
| CN103257462A (en) * | 2013-05-13 | 2013-08-21 | 天津理工大学 | Dynamic tunable filter based on polarization controller and waveguide grating and tuning method |
| CN103487881A (en) * | 2013-07-10 | 2014-01-01 | 李若林 | Tunable optical filter and chip integrated device with tunable optical filter |
| CN103744198A (en) * | 2014-01-26 | 2014-04-23 | 东南大学 | Voltage-modulated periodic subwavelength metal grating filter and preparation method thereof |
| WO2015105063A1 (en) * | 2014-01-07 | 2015-07-16 | 技術研究組合光電子融合基盤技術研究所 | Grating coupler and production method therefor |
-
2018
- 2018-11-28 CN CN201811433756.XA patent/CN109270626B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1845484A (en) * | 2005-04-08 | 2006-10-11 | 中国科学院半导体研究所 | Structure of realizing ROADM and method for manufacturing same |
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