CN109270626B - Adjustable grating filter based on SOI wafer and preparation method - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G02—OPTICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12109—Filter
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Abstract
The invention discloses an adjustable grating filter based on an SOI wafer and a preparation method thereof, wherein the adjustable grating filter comprises the SOI wafer, top silicon of the SOI wafer is completely etched to form spaced and periodic rectangular silicon and grating grooves, the grooves are filled with a dielectric material, and a metal layer with a certain thickness is sputtered on the dielectric material to be used as an electrode. The fully etched grating adopted by the invention has no problem of etching depth, and the difference of refractive index between the grating and the groove is reduced by adding the medium material between the grooves of the grating, so that a narrower reflection waveband is obtained, the effect which can be achieved by shallow etching is achieved, and the fully etched rectangular waveguide and the grating can be synchronously manufactured.
Description
Technical Field
The invention discloses an adjustable grating filter based on an SOI wafer and a preparation method thereof, and relates to the field of photon regulation and control devices and micro-optoelectronic devices.
Background
The filter plays an important role in optical communication, is mainly used for screening and operating the wavelength of an optical signal, and is divided into a band-pass type and a band-stop type. The band-pass type is mainly used for selecting the signal with the required wavelength to pass through, and the band-stop type is used for blocking the signal with the specific wavelength. Filters are widely used in optical transmission networks, and they also play a significant role in integrated silicon-based optical waveguides. It can be used for signal selection, wavelength division multiplexing and demultiplexing of specific wavelength, noise signal filtering, etc. (Jianjiafei, research on silicon-based multimode waveguide grating filter [ D ]. Zhejiang: Zhejiang university, 2018).
Various filters have appeared on the market today, such as: F-P cavity (Fabry-Perot) Filter (LvDaizuan. high performance F-P tunable Filter research and development [ D ]. Wuhan: university of Wuhan science 2011), Dielectric Thin Film Filter (Multi layer Dielectric Thin Film Filter, MDTFF) (Nonaka S, SudaT, Oda H. microprocessors and Nanotechnology Conference.2001 International.2001, 206-207), Arrayed Waveguide Grating (Arrayed Waveguide Grating, AWG) (AWG research of Liuyuan silicon-based nanowire array Waveguide Grating [ D ]. Wuhan: university of China, Mach), Acousto-Optic tunable Filter (Acsto optical Waveguide Filter, AOTF) (research of Highenkanji; Shanxi: northern university of China, Mach-Zehnder Interferometer (Mach-Zehnder Interferometer) Filter (Mach-Zehnder Interferometer I2011. Zehnder Interferometer) and its Beijing Interferometer Waveguide Grating characteristics increase Filter (Mach-Zehnder Interferometer) are based on the research of Beijing Interferometer and Zehnder Interferometer of Beijing Interferometer, 2015) micro-ring resonator filters (dawn. filter characteristics based on micro-ring resonator arrays study [ D ]. langzhou: 2017, Lanzhou traffic university), a Fiber Bragg Grating (FBG) filter, and also blazed gratings, holographic gratings and the like (Zhou Zhi. design research on a cascade Mach-Zehnder interferometer type band-pass filter [ D ]. Sichuan: southwest traffic university, 2006). However, these conventional optical filters have their own disadvantages: the F-P cavity filter is mainly poor in stability and low in sidelobe suppression ratio; the multilayer dielectric thin film filter is difficult to manufacture into a narrow-band filter, can only aim at a certain specific wavelength, and has poor flexibility; the planar array waveguide filter has the defects of difficult access with optical fibers, higher cost, larger substrate requirement and the like; the cascaded MZI filter has the total bandwidth limited by the FSR and the large size, which causes great limitation to the application; MRRs have two basic disadvantages: the device has uneven spectral response and convex Lorentz distribution, and cannot normally work when the device causes spectral drift due to process errors or temperature change; secondly, the non-resonant light in the spectrum is strong, which makes the MRR crosstalk larger.
The Bragg grating has the advantages of convenient control of bandwidth, good wavelength stability, simple process and no FSR limitation, can cover the whole C wave band, and has great advantages compared with other filtering methods. Therefore, bragg grating filters have found wide application in wavelength division multiplexing, narrow bandwidth filters, etc. in integrated optical waveguides.
Some of the conventional methods achieve the purpose of changing the wavelength by packaging the bragg grating and then controlling the temperature of the packaged grating by using a temperature control module (design of a high-precision temperature-controlled tunable grating filter [ J ]. Fujian: physical and electronic information engineering system of university of southern Fujian, 2013). In another method, a layer of silicon oxide is added on the Si, and the silicon oxide is filled into the grating groove etching part, and the temperature is controlled by heating the uppermost silicon oxide. However, these methods have the following disadvantages: (1) the temperature control chip is adopted to control the temperature, the structure is complex and the cost is high; (2) if the grating is fully etched, a narrow reflection band cannot be guaranteed. (3) The structure covered with the silicon oxide layer is adopted for heating, the regulation and control efficiency of the refractive index of the filling material is low, and the possibility of uneven heating exists, so that the effective refractive index is changed. (4) And the waveguide is wrapped by silicon oxide all around, so that the light restraint of the waveguide is poor.
Based on the problems, the invention adopts the Bragg waveguide grating with the medium filling material, can couple the optical signal near the resonant wavelength into a mode of reverse transmission, and realizes that the straight-through end is a band-stop filter and the reflection end is a band-pass filter. By adopting the structure of adding the electric heating material between the fully etched Bragg gratings, the difficulty in controlling the etching depth can be avoided, and the relatively low refractive index difference can be ensured to ensure that the narrow reflection waveband is possessed.
Disclosure of Invention
The invention provides an adjustable grating filter based on an SOI wafer and a preparation method thereof aiming at the defects in the background technology.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a tunable grating filter based on an SOI wafer comprises an SOI wafer; the top layer silicon of the SOI wafer is etched completely to form rectangular silicon and grating grooves which are arranged at intervals and periodically, dielectric materials are filled in the grooves, and a metal layer with a certain thickness is sputtered on the dielectric materials to be used as a heating electrode.
Further, the dielectric material is an electrothermal material, and the refractive index of the electrothermal material is smaller than that of silicon.
Further, the silicon oxide layer thickness of the SOI wafer is 1 commonly found on the market
，2
The thickness of a BOX layer of 10 mu m and the like, and the thickness of top silicon of the SOI wafer is 220nm, 340nm and the like of the common single-mode multimode optical waveguide.
A method for preparing a tunable grating filter based on an SOI wafer comprises the following steps:
the method comprises the following steps: cleaning and drying the SOI wafer by adopting water, acetone or ethanol to remove pollutants on the surface and enhance the surface adhesion;
step two: covering a mask layer on the surface of the silicon layer, and patterning the mask layer through photoetching or electron beam photoetching technology;
step three: carrying out full etching on the top layer silicon by a dry method or a wet method to manufacture a waveguide and a grating groove;
step four: removing the mask layer, filling a dielectric material into the space between the grating grooves, and surrounding the grating grooves with the dielectric material;
step five: and preparing a heating metal electrode on the dielectric material.
Further, the SOI wafer includes a first SOI wafer and a second SOI wafer, and the thicknesses of the respective layers of the SOI wafer are as follows: the top silicon layer has a thickness of 220nm and the silicon oxide layer has a thickness of 2
And the thicknesses of the corresponding layers of the second SOI wafer are as follows: the top layer silicon thickness is 340nm, and the silicon oxide layer thickness is 10
The waveguide of the SOI wafer I is a completely etched silicon single-mode rectangular waveguide, and the waveguide of the SOI wafer II is a completely etched silicon multi-mode rectangular waveguide.
Further, in the second step, photoresist is coated on the top silicon surface of the SOI wafer I in a spinning mode, a mask plate with a grating and a waveguide pattern is used as a mask after soft baking is carried out, the photoresist is used as the mask layer, exposure and development are carried out on the photoresist, the photoresist is made to be patterned, and then drying is carried out at the temperature of 115-120 ℃;
or depositing 2 mu m thick silicon oxide on the surface of the second top layer silicon of the SOI wafer by using a physical deposition method, spin-coating photoresist on the surface of a silicon oxide layer, using a mask plate with grating and waveguide patterns as a mask, taking the silicon oxide as the mask layer, then carrying out exposure and development, then drying at 115-120 ℃, removing the exposed silicon oxide layer by wet etching to pattern the silicon oxide layer, and then removing the photoresist;
in the third step: carrying out full etching on the top layer silicon of the SOI wafer I by using a dry method to manufacture a waveguide structure and a grating groove or carrying out full etching on the top layer silicon of the SOI wafer II by using a wet method to manufacture the waveguide structure and the grating groove and drying;
further, in the fourth step, the photoresist and the mask layer on the first SOI wafer are removed by a wet method, Polydimethylsiloxane (PDMS) is filled between grating grooves of the first SOI wafer after drying, and the PDMS is cured or an aluminum oxide medium with the grating groove depth as the thickness is deposited by evaporation, the silicon oxide mask is removed, and simultaneously lift-off aluminum oxide is removed.
Further, the fifth step comprises: spin-coating photoresist, baking the photoresist, then carrying out alignment with the photoetching in the second step, developing to expose a specific area where a metal electrode is to be deposited, and drying; sputtering Ni/Au two layers of metal with certain thickness, lift-off stripping the photoresist and the metal on the photoresist, and finally leaving a metal electrode in a specific area; and (5) drying.
The structure of the adjustable grating filter is composed of a waveguide area, a grating area and a temperature control area, wherein the waveguide area is realized by manufacturing a waveguide structure on top silicon through micromachining, can be single-mode or multi-mode waveguides with different wave bands, the grating area is realized by preparing a completely-etched grating groove through a micro-nano processing technology and is composed of a certain period number, specific parameters of the grating area are designed according to a Bragg wavelength principle, specific material parameters and a filtering wave band, and the temperature control area is composed of a dielectric material and a heating electrode, wherein the dielectric material is generally an electrothermal material which has a smaller refractive index than Si and a small difference and is filled in the grating groove, the electrode is manufactured on the dielectric material, and the vicinity of the grating groove is used for achieving the purpose of efficiently controlling the refractive index of the dielectric by using temperature and further regulating and controlling the reflection wavelength.
A bragg grating (FBG) is a periodic microstructure that acts as a wavelength selective mirror. Only light of the bragg wavelength will be reflected by the grating and the remaining light waves will continue to pass through with little loss.
Bragg wavelength (
) Is determined by the period (Λ) and effective refractive index (Λ) of the microstructure
) To define
. The etched grating groove is filled with an electrothermal material with a refractive index smaller than that of Si, so that the refractive index difference between the Si and the groove is reduced, the temperature of the electrothermal material is changed by current heating, the refractive index of the material, namely the external medium of the grating is changed, and the change of the refractive index of the electrothermal material further causes the effective refractive index of the Bragg grating
Thereby achieving the purpose of changing the Bragg wavelength.
The sensitivity to temperature is one of the characteristics of a bragg grating, the temperature dependence of which is determined by the following equation:
wherein
Is the thermal sensitivity coefficient of the bragg grating;
is the coefficient of thermal expansion;
is the thermo-optic coefficient (refractive index for temperature). The temperature sensitivity of 1550nm Bragg grating is
=9.8
。
Namely the shift of the central wavelength of the grating.
The invention changes the grating temperature through the electric heating material, thereby causing the drift of the Bragg wavelength and achieving the function of adjustable reflection target wavelength light.
Advantageous effects
1. The fully etched grating adopted by the invention has no problem of difficult control of etching depth, and the difference of refractive index between the grating and the groove is reduced by adding the medium material between the grooves of the grating, so that a narrower reflection waveband is obtained, the effect which can be achieved by shallow etching is achieved, and the fully etched rectangular waveguide and the grating can be synchronously manufactured.
2. The medium filled in the middle of the grating is directly heated by the electrode pair, so that the heating efficiency is high, the regulation and control effect is good, and the uniform heating of the medium is also ensured.
3. The design of the device is more flexible due to the selectivity of the filling material, the material selection can be carried out according to different wave bands and bandwidth requirements, the structure and the process are relatively simple, and the cost is lower.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the mechanism in the direction A-A of FIG. 1;
FIG. 3 is a flow chart of an embodiment of the preparation method of the present invention.
1-top silicon, 2-silicon oxide layer, 3-silicon substrate, 4-dielectric material and 5-electrode.
Detailed Description
The following describes the embodiments in further detail with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
In one embodiment, as shown in FIGS. 1-2, the tunable grating filter of the present invention comprises an SOI wafer comprising a top silicon 1, a silicon oxide layer 2 and a silicon substrate 3; top silicon 1 of the SOI wafer is etched completely to form rectangular silicon and grating grooves which are arranged at intervals and periodically, a dielectric material 4 is filled in the grooves, a metal layer with a certain thickness is sputtered on the dielectric material 4 to serve as an electrode 5, the metal layer is Ni/Au two-layer metal, the dielectric material 4 is an electric heating material, the electric heating material is smaller than the refractive index of silicon, and the thickness of a silicon oxide layer of the SOI wafer is 1 mu m and 2 mu m which are common in the market
The thickness of a BOX layer of 10 mu m and the like, and the thickness of top silicon 1 of the SOI wafer is 220nm, the thickness of a common single-mode multimode optical waveguide of 340nm and the like.
In one embodiment of the fabrication method shown in fig. 3, a is the starting SOI material; b is a structure after spin coating; c is a process of patterning the mask by exposure of the mask plate; d is the structure after development; e is the structure after the full etching; f is the device structure after removing the photoresist; g is a structure filled with an electrothermal material; h is the final structure after mounting the electrodes;
an embodiment of a manufacturing method, starting material is an SOI wafer, corresponding to the thicknesses of the layers: the thickness of the top silicon layer is 220nm, the thickness of the silicon oxide layer is 2 mu m, the dielectric material is PDMS, and the electrode is Ni/Au. The waveguide is a completely etched silicon single-mode rectangular waveguide, and the grating is a completely etched grating.
The manufacturing process flow is as follows:
the method comprises the following steps: and carrying out pretreatment processes such as water cleaning, acetone cleaning, ethanol cleaning, drying and the like on the SOI wafer for later use.
Step two: spin-coating a photoresist 2 μm thick on the surface of the silicon layer of the SOI, and then soft-baking at 90 ℃ for 45 seconds; and (3) using a mask plate with grating and waveguide patterns as a mask layer, exposing and developing, and then post-baking for 1min at 120 ℃.
Performing full etching on the top silicon by a dry method to manufacture a waveguide structure and a grating groove; and removing the photoresist by a wet method, and drying.
Step four: and (3) pouring PDMS between grating grooves, and baking to solidify the PDMS.
Step five: spin-coating photoresist with the thickness of 8 mu m, after drying the photoresist, carrying out alignment with the photoetching in the second step, developing to expose a specific area where a metal electrode is to be deposited, and drying; sputtering Ni/Au two layers of metal with certain thickness, lift-off stripping the photoresist and the metal on the photoresist, and finally leaving a metal electrode in a specific area; and (5) drying.
In another embodiment of the method, the starting material is an SOI wafer, and the thicknesses of the respective layers are: the thickness of the etched grating layer silicon is 340nm, the thickness of the silicon oxide layer is 10 mu m, the dielectric material is aluminum oxide, the electrode is Ni/Au, the waveguide is a fully etched silicon multimode rectangular waveguide, and the grating is a fully etched grating.
The manufacturing process flow is as follows:
the method comprises the following steps: and carrying out pretreatment processes such as water cleaning, acetone cleaning, ethanol cleaning, drying and the like on the SOI wafer for later use.
Step two: depositing silicon oxide with the thickness of 2 mu m on the surface of the silicon layer of the SOI by a physical deposition method; spin-coating 2 mu m thick photoresist on the surface of the silicon oxide layer, and then soft-baking at 90 ℃ for 45 seconds; and (3) taking a mask plate with a certain pattern as a mask, exposing, developing, post-baking for 1min at 115 ℃, removing exposed silicon oxide by wet etching to pattern the silicon oxide, and removing the photoresist.
And step three, carrying out full etching on the top layer silicon by using a wet method to manufacture waveguide grating grooves and drying.
Step four: and (3) evaporating and depositing an aluminum oxide medium with the grating groove depth as the thickness, removing the silicon oxide mask, and simultaneously lifting-off aluminum oxide.
Step five: spin-coating photoresist with the thickness of 8 mu m, after drying the photoresist, carrying out alignment with the photoetching in the second step, developing to expose a specific area where a metal electrode is to be deposited, and drying; sputtering Ni/Au two layers of metal with certain thickness, lift-off stripping the photoresist and the metal on the photoresist, and finally leaving a metal electrode in a specific area; and (5) drying.
The fully etched grating adopted by the invention has no problem of etching depth, and the difference of refractive index between the grating and the groove is reduced by adding the medium material between the grooves of the grating, so that a narrower reflection waveband is obtained, the effect which can be achieved by shallow etching is achieved, and the fully etched rectangular waveguide and the grating can be synchronously manufactured.
The invention adopts a method of filling medium heating for regulation and control, directly heats the medium filled in the middle of the grating through the electrode pair, has high heating efficiency and good regulation and control effect, and also ensures the medium to be heated uniformly.
The selectivity of the filling material of the invention enables the design of the device to be more flexible, the material selection can be carried out according to different wave bands and bandwidth requirements, and the structure and the process are relatively simple and the cost is lower.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A tunable grating filter based on an SOI wafer is characterized by comprising the SOI wafer, wherein top silicon of the SOI wafer is etched completely to form rectangular silicon and grating grooves which are arranged at intervals and periodically, dielectric materials are filled in the grooves, a metal layer with a certain thickness is prepared on the dielectric materials to serve as a heating electrode, and the electrode positions are positioned on two sides of the rectangular silicon and the grating grooves; the dielectric material is an electrothermal material, and the refractive index of the electrothermal material is smaller than that of silicon; the structure of the adjustable grating filter is composed of a waveguide area, a grating area and a temperature control area, wherein the waveguide area is realized by manufacturing a waveguide structure on top silicon through micromachining, the grating area is realized by preparing a completely-etched grating groove through a micro-nano processing technology and is composed of a certain period number, specific parameters of the grating area are designed according to a Bragg wavelength principle, specific material parameters and a filtering wave band, and the temperature control area is composed of a dielectric material and a heating electrode.
2. A method of manufacturing the tunable grating filter based on an SOI wafer of claim 1, comprising the steps of:
the method comprises the following steps: cleaning and drying the SOI wafer;
step two: arranging a mask layer on the top silicon surface of the SOI wafer, and patterning the mask layer by photoetching or electron beam photoetching technology;
step three: carrying out full etching on the top layer silicon to manufacture strip waveguides and grating grooves which are periodically arranged;
step four: removing the mask layer, and filling a dielectric material into the space between the grating grooves;
step five: and preparing a heating metal electrode on the dielectric material.
3. The method of claim 2, wherein in the step one, the SOI wafer is subjected to a pre-treatment process of water, acetone or ethanol cleaning, and then drying, and then is ready for use.
4. The method of claim 2, wherein in the second step, a photoresist is spin-coated on the top silicon surface of the first SOI wafer, a mask with grating and waveguide patterns is used as a mask after soft baking, the photoresist is used as a mask layer, the photoresist is exposed, developed, patterned, and then baked at 115-120 ℃.
5. The method as claimed in claim 2, wherein the step three is a step of performing a full etching of the top silicon of the first SOI wafer by a dry method to form the waveguide structure and the grating trench.
6. The method of claim 2, wherein in the fourth step, the photoresist and the mask layer on the first SOI wafer are removed by a wet process, after drying, the dielectric material PDMS is poured between the grating grooves of the first SOI wafer, and then dried to solidify the PDMS.
7. The method of claim 2, wherein step five comprises: spin-coating photoresist, baking the photoresist, then carrying out alignment with the photoetching in the second step, developing to expose a specific area where a metal electrode is to be deposited, and drying; sputtering two layers of metal with certain thickness, lift-off stripping the photoresist and the metal on the photoresist, and finally leaving a metal electrode in a specific area; and (5) drying.
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| CN101738679A (en) * | 2008-11-21 | 2010-06-16 | 北京航空航天大学 | Slit waveguide-based Bragg grating filter |
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