CN115842241A - Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method - Google Patents
Waveguide grating antenna based on evanescent wave regulation and control and manufacturing method Download PDFInfo
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- 238000005530 etching Methods 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
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- 238000000206 photolithography Methods 0.000 description 7
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- 230000001276 controlling effect Effects 0.000 description 3
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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Abstract
The invention discloses a waveguide grating antenna based on evanescent wave regulation and a manufacturing method thereof, wherein the waveguide grating antenna comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are separated by a preset distance, the waveguide structure is configured to couple input light to the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light to a free space. The invention reduces the complexity of the process by realizing the preparation of the grating structure and the waveguide structure in a single device layer, does not need to control the grating etching depth to a plurality of nanometers, reduces the difficulty of the process, can easily realize the effective emission length in millimeter order, and solves the technical problem of high difficulty in manufacturing the waveguide grating antenna with the effective emission length in millimeter order in the single device layer at present.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a waveguide grating antenna based on evanescent wave regulation and a manufacturing method thereof.
Background
In recent years, due to the rise of automatic driving, lidar has attracted great interest as an indispensable sensor for high-level automatic driving. The traditional laser radar adopts a mechanical device to realize space scanning, and the laser radar generally has the problems of high cost, large size, difficulty in meeting the vehicle specifications, easiness in damaging a mechanical structure, poor mass production and the like. The optical phased array can eliminate mechanical devices, realize real pure solid-state laser radar, greatly reduce the volume and the cost and improve the scanning speed of light beams.
Waveguide gratings are a very important component of optical phased arrays, which are used to launch light in a waveguide into free space. The effective emission length of the waveguide grating is an important parameter, the longer the effective emission of the grating is, the smaller the divergence angle in the waveguide direction is, and the small divergence angle is favorable for improving the resolution of the optical phased array. The waveguide grating with millimeter-scale effective emission length is realized only by etching silicon, the etching depth is only a few nanometers, and the difficulty of the process is increased. Millimeter-scale waveguide gratings can also be realized by multilayer structures, but at the same time the complexity of the process is increased.
Disclosure of Invention
The invention mainly aims to provide a waveguide grating antenna based on evanescent wave regulation and a manufacturing method thereof, and aims to solve the technical problem that the manufacturing difficulty of the waveguide grating antenna with millimeter-scale effective emission length manufactured in a single device layer is high at present.
In order to achieve the purpose, the invention provides a waveguide grating antenna based on evanescent wave regulation, which comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are separated by a preset distance, the waveguide structure is configured to couple input light to the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light to a free space.
Optionally, the grating structure is formed by a plurality of first trenches disposed at the top of the device layer.
Optionally, the depth of the first trench is less than or equal to the thickness of the device layer.
Optionally, the waveguide structure is formed by two second trenches disposed on top of the device layer.
Optionally, the depth of the second trench is equal to the thickness of the device layer.
Optionally, the first oxide layer and the second oxide layer are made of insulating SiO 2 And (3) a layer.
In addition, in order to achieve the above object, the present invention further provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, including the steps of:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: respectively forming shallow trenches at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a second mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a silicon substrate, forming a first oxide layer on the silicon substrate, and forming a device layer on the oxide layer.
In addition, in order to achieve the above object, the present invention further provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, including the steps of:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: forming a shallow trench at a position corresponding to the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a fourth mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a silicon substrate, forming a first oxide layer on the silicon substrate, and forming a device layer on the oxide layer.
The invention provides a waveguide grating antenna based on evanescent wave regulation and a manufacturing method thereof, wherein the waveguide grating antenna comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are separated by a preset distance, the waveguide structure is configured to couple input light to the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light to a free space. The invention reduces the complexity of the process by realizing the preparation of the grating structure and the waveguide structure in a single device layer, does not need to control the grating etching depth to a plurality of nanometers, reduces the difficulty of the process, can easily realize the effective emission length in millimeter order, and solves the technical problem of high difficulty in manufacturing the waveguide grating antenna with the effective emission length in millimeter order in the single device layer at present.
Drawings
Fig. 1 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation in an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a waveguide grating antenna based on evanescent wave modulation in an embodiment of the present invention.
Fig. 3 is a cross-sectional view of an SOI wafer employed in an embodiment of the present invention.
Fig. 4 is a schematic diagram of the first photolithography etching in the manufacturing method of the waveguide grating antenna based on evanescent wave modulation in the embodiment of the present invention.
Fig. 5 is a schematic diagram of the waveguide grating antenna based on evanescent wave modulation after the second photolithography etching in the manufacturing method thereof in the embodiment of the present invention.
Fig. 6 is a schematic diagram of the waveguide grating antenna based on evanescent wave modulation and control according to the embodiment of the present invention after the first lithography etching in the second manufacturing method.
Fig. 7 is a schematic diagram of the waveguide grating antenna based on evanescent wave modulation after the second photolithography etching in the second manufacturing method of the waveguide grating antenna according to the embodiment of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all directional indicators (such as up, down, left, right, front, back \8230;) in the embodiments of the present invention are only used to explain the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the invention.
Currently, in the related art, the manufacturing difficulty of manufacturing waveguide grating antennas with effective transmission lengths in millimeter order in a single device layer is large.
To solve this problem, various embodiments of the waveguide grating antenna and the manufacturing method based on evanescent wave modulation of the present invention are proposed. According to the waveguide grating antenna based on evanescent wave regulation and the manufacturing method thereof, the grating structure and the waveguide structure are prepared in a single device layer, so that the process complexity is reduced, the grating etching depth is not required to be controlled to be several nanometers, the process difficulty is reduced, the millimeter-order effective emission length can be easily realized, and the technical problem that the manufacturing difficulty of the waveguide grating antenna with the millimeter-order effective emission length in the single device layer is high at present is solved.
Referring to fig. 1, fig. 1 is a schematic diagram of a waveguide grating antenna based on evanescent wave modulation according to an embodiment of the present invention.
The embodiment provides a waveguide grating antenna based on evanescent wave regulation, which comprises a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are separated by a preset distance, the waveguide structure is configured to couple input light to the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light to a free space.
As will be readily appreciated, the waveguide structure is configured to couple input light to a grating structure upon receipt of the input light, the grating structure being configured to launch the received coupled light into free space. Therefore, the embodiment can realize longer waveguide grating in a single device layer under the condition of not strictly controlling the etching depth through the regulation and control of evanescent waves
In a preferred embodiment, the grating structure is formed by a plurality of first trenches arranged on the top of the device layer, and the depth of the first trenches is less than or equal to the thickness of the device layer; the waveguide structure is formed by two second grooves arranged at the top of the device layer, and the depth of each second groove is equal to the thickness of the device layer.
It is easily understood that in the present embodiment, as shown in fig. 2, light propagates in the waveguide, and a part of the light propagates in the cladding, and the part of the light is coupled to the grating and then emitted into free space through the grating. Because the light emitted by the grating is a part of light coupled into the grating by the waveguide, when the interval between the grating and the waveguide is increased, the light coupled to the grating is less, the light emitted by the grating with unit length is less, and therefore, the longer the grating can be made, and the light can be emitted by the grating.
Therefore, the control of the disturbance intensity of the grating is realized by regulating and controlling the evanescent wave, namely controlling the distance between the waveguide and the grating, the disturbance intensity is reduced, and the effective emission length of the grating is improved.
In the preferred embodimentIn an embodiment, the first oxide layer and the second oxide layer are made of insulating SiO 2 And (3) a layer.
It should be noted that, in the grating formed by shallow etching of a common single device layer, 100% of light enters the grating portion directly, and the proportion of light radiated by the grating per unit length is the same, say 10%, and only 90% of light remains after the unit length. After a further unit length, 81% remains. The structure provided by this embodiment assumes that the light coupled into the grating portion by the waveguide is only 2% per unit length, and the grating is de-radiated by 10% of 2% after passing through the unit length, thereby making the grating longer.
In this embodiment, the waveguide grating antenna based on evanescent wave modulation is implemented in a single device layer without using a multilayer structure, which reduces the complexity of the process, does not need to control the grating etching depth to several nanometers, reduces the difficulty of the process, and can easily implement an effective emission length in millimeter order.
In a preferred embodiment, the present application further provides a method for manufacturing a waveguide grating antenna based on evanescent wave modulation, comprising the steps of:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: respectively forming shallow trenches at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a second mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: a bulk silicon substrate is provided, a first oxide layer is formed on the bulk silicon substrate, and a device layer is formed on the oxide layer, as shown in fig. 3.
Specifically, in this embodiment, an SOI wafer is used, and a waveguide grating antenna based on evanescent wave modulation is obtained based on the processes such as photolithography and etching, and the main process flow is as follows:
the method comprises the following steps: the structure is based on an SOI wafer, and a grating pattern is obtained through the processes of photoetching, etching and the like. Wherein, after the first photolithographic etching, as shown in fig. 4.
Step two: protecting the pattern at the grating, and obtaining the final waveguide grating and waveguide pattern through the processes of photoetching, etching and the like. Wherein, after the second photolithography etching, as shown in fig. 5.
Step three: depositing a layer of SiO by PECVD 2 As the upper cladding layer of the overall device. Wherein the upper cladding layer is deposited as shown in figure 1.
In a preferred embodiment, the present application further provides a second manufacturing method of a waveguide grating antenna based on evanescent wave modulation, which is characterized by comprising the following steps:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: forming a shallow trench at a position corresponding to the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a fourth mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
Optionally, the obtaining the SOI wafer specifically includes: providing a silicon substrate, forming a first oxide layer on the silicon substrate, and forming a device layer on the oxide layer.
Specifically, in this embodiment, an SOI wafer is used, and a waveguide grating antenna based on evanescent wave modulation is obtained based on the processes such as photolithography and etching, and the main process flow is as follows:
the method comprises the following steps: the structure is based on an SOI wafer, and grating patterns are obtained through the processes of photoetching, etching and the like. Wherein, after the first photolithographic etching, as shown in fig. 6.
Step two: protecting the pattern at the grating, and obtaining the waveguide pattern through the processes of photoetching, etching and the like. Wherein, after the second photolithography etching, as shown in fig. 7.
Step three: depositing a layer of SiO by PECVD 2 As the upper cladding layer of the overall device. Wherein the upper cladding layer is deposited as shown in figure 1.
In this embodiment, a waveguide grating antenna based on evanescent wave modulation and a manufacturing method thereof are provided, in which the grating structure and the waveguide structure are prepared in a single device layer, so that the process complexity is reduced, the grating etching depth does not need to be controlled to several nanometers, the process difficulty is reduced, the millimeter-scale effective emission length can be easily realized, and the technical problem of high difficulty in manufacturing the waveguide grating antenna with the millimeter-scale effective emission length in the single device layer at present is solved.
Other embodiments or specific implementation manners of the waveguide grating antenna manufacturing method based on evanescent wave regulation and control of the present invention may refer to the above-mentioned embodiments of the waveguide grating antenna based on evanescent wave regulation and control, and are not described herein again.
The above are only preferred embodiments of the invention, and not intended to limit the scope of the invention, and all equivalent structures or equivalent flow transformations that may be applied to the present specification and drawings, or applied directly or indirectly to other related technical fields, are included in the scope of the invention.
Claims (10)
1. A waveguide grating antenna based on evanescent wave regulation is characterized by comprising a bulk silicon substrate, a first oxide layer, a device layer and a second oxide layer from bottom to top; the device layer is provided with a grating structure and a waveguide structure which are separated by a preset distance, the waveguide structure is configured to couple input light to the grating structure when the input light is received, and the grating structure is configured to emit the received coupled light to a free space.
2. A waveguide grating antenna based on evanescent wave modulation as claimed in claim 1, wherein said grating structure is formed by a number of first trenches arranged on top of said device layer.
3. The waveguide grating antenna based on evanescent wave modulation of claim 2, wherein a depth of the first trench is equal to or less than a thickness of the device layer.
4. An evanescent wave modulation based waveguide grating antenna as claimed in claim 1, wherein said waveguide structure is formed by two second trenches arranged on top of said device layer.
5. The evanescent wave modulation based waveguide grating antenna of claim 4, wherein a depth of the second trench is equal to a thickness of the device layer.
6. The waveguide grating antenna based on evanescent wave modulation of claim 1, wherein the first oxide layer and the second oxide layer are insulating SiO 2 And (3) a layer.
7. A manufacturing method of a waveguide grating antenna based on evanescent wave regulation is characterized by comprising the following steps:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: respectively forming shallow trenches at corresponding positions of the grating structure and the waveguide structure on the device layer by adopting a first mask etching process to obtain a grating structure and a waveguide intermediate structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a second mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
8. The method of claim 7, wherein obtaining the SOI wafer specifically comprises: providing a silicon substrate, forming a first oxide layer on the silicon substrate, and forming a device layer on the oxide layer.
9. A manufacturing method of a waveguide grating antenna based on evanescent wave regulation is characterized by comprising the following steps:
s1: obtaining an SOI wafer; the SOI wafer comprises a silicon substrate, a first oxidation layer and a device layer from bottom to top;
s2: forming a shallow trench at a position corresponding to the grating structure on the device layer by adopting a third mask etching process to obtain the grating structure;
s3: forming a deep groove at a position corresponding to the waveguide structure on the device layer by adopting a fourth mask etching process to obtain the waveguide structure;
s4: a second oxide layer is deposited over the device layer.
10. The method of claim 9, wherein obtaining an SOI wafer specifically comprises: providing a silicon substrate, forming a first oxide layer on the silicon substrate, and forming a device layer on the oxide layer.
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