CN108807586B - A kind of band logical solar blind ultraviolet detector and preparation method thereof polarizing selection characteristic based on gallium oxide - Google Patents
A kind of band logical solar blind ultraviolet detector and preparation method thereof polarizing selection characteristic based on gallium oxide Download PDFInfo
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- CN108807586B CN108807586B CN201810399948.7A CN201810399948A CN108807586B CN 108807586 B CN108807586 B CN 108807586B CN 201810399948 A CN201810399948 A CN 201810399948A CN 108807586 B CN108807586 B CN 108807586B
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 12
- 230000010287 polarization Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000001914 filtration Methods 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The band logical solar blind ultraviolet detector of selection characteristic is polarized based on gallium oxide, the β phase oxidation algan single crystal optical filter of gallium oxide substrate, metal (Au) interdigited electrode, dielectric passivation layer and another allomeric orientation including β phase, deposited metal obtains interdigited electrode array in the single crystalline substrate of (100), (001) or (010) β phase, then dielectric passivation layer is covered, the dielectric passivation layer leaks out metal (Au) interdigited electrode；Gallium oxide single crystal optical filter is placed at the top 2-5mm of Au interdigited electrode device, and the crystal orientation of gallium oxide single crystal optical filter is identical as substrate, and area is slightly larger than substrate, and gallium oxide single crystal filters unilateral interior crystal orientation perpendicular to gallium oxide substrate.Above-mentioned device has encapsulating structure, and the output of array signal may be implemented.This detector is able to achieve effective filtering clutter, enhances the inhibiting effect to shortwave, realizes the solar blind ultraviolet detector of narrowband；Panel detector structure is simple, and cost is relatively low, inhibits higher, is conducive to promote the use of.
Description
Technical field
The invention belongs to semiconductor photoelectronic device technical fields, are related to a kind of solar-blind UV detector, specially one
Kind polarizes the band logical solar blind ultraviolet detector and preparation method thereof of selection characteristic based on gallium oxide.
Technical background
Sunlight pass through atmosphere when, due to Ozone in Atmosphere layer and other gases absorption and dissipate effect, sunlight
Ultraviolet radioactive of the medium wavelength less than 280nm can not almost reach ground, therefore wavelength is in the ultraviolet light of 200nm to 280nm wave band
Referred to as day blind ultraviolet light, also known as UVC wave band.Day, blind UV signal was with background interference is small, does not allow to be also easy to produce false alarm
A little.Therefore, detect the solar blind ultraviolet detector of this band signal have in fields such as military, civilian and scientific researches it is wide
Application prospect.
Common solar blind ultraviolet detector is mainly equipped with the Si base photodiode and vacuum of optical filter currently on the market
Electron multiplier.The detector for generally using AlGaN to prepare as photosensitive layer in military affairs, in this detector, due to needing
The forbidden bandwidth adjusting of AlGaN, to higher position, therefore in AlGaN, aluminium component is higher, this is easy for causing AlGaN film
Crystal quality decline, influence the performance of device.And the band gap of emerging oxide semiconductor β phase oxidation gallium just falls in 4.5-
4.7eV belongs to the energy range of day blind ultraviolet light, therefore can be directly as the photosensitive layer of solar blind ultraviolet detector, this just keeps away
The problem of having exempted from the decline of the film crystal quality due to caused by high Al contents.In addition, although these detectors inhibit with long wave
Ability, but cannot achieve the inhibition to shortwave, it is expensive short there is still a need for installing additional in needing to realize band logical detection application field
Wave inhibits filtering system to be just able to achieve the detection of narrow bandpass, considerably increases application cost.And the gallium oxide of β phase its with monocline
The lattice constant of structure, three directions is different, therefore electronics follows certain tranansition matrix in transition process；Specific table
Reveal come for when the direction of an electric field of light is parallel to different crystallographic axis, with the different feature of optical energy gap.It therefore, can be with
Shortwave may be implemented and inhibit function, realize band logical using another β phase oxidation gallium film as filter plate by this feature
Day blind ultraviolet detection.
Summary of the invention
The object of the present invention is to provide it is a kind of based on gallium oxide polarize selection characteristic band logical solar blind ultraviolet detector and
Preparation method.On the gallium oxide single crystal of β phase, by electron beam deposition, the method for magnetron sputtering or thermal evaporation is in photoetching shape
At interdigitated figure on prepare interdigited electrode, recycle the β phase oxidation algan single crystal of another allomeric orientation as optical filter,
Form band logical solar blind ultraviolet detector.
Technical scheme is as follows: a kind of band logical solar blind ultraviolet detector polarizing selection characteristic based on gallium oxide,
The β phase oxygen of gallium oxide substrate, metal (Au) interdigited electrode, dielectric passivation layer and another allomeric orientation including β phase
Change algan single crystal optical filter, deposited metal obtains interdigited electrode battle array in the single crystalline substrate 11 of (100), (001) or (010) β phase
Column 12, then cover dielectric passivation layer 13, and the dielectric passivation layer 13 leaks out metal (Au) interdigited electrode；Oxidation
14 optical filter of algan single crystal is placed at the top 2-5mm of Au interdigited electrode device, the crystal of gallium oxide single crystal optical filter
Orientation is identical as substrate, and area is slightly larger than substrate, but gallium oxide single crystal filters unilateral interior crystal orientation perpendicular to gallium oxide substrate.
The gallium oxide substrate thickness of the β phase is 100-500 μm, and metal (Au) interdigited electrode is located at the oxidation of β phase
On gallium substrate, electrode with a thickness of 50-200nm, the length of interdigital figure is 480 μm, and width is 5 μm, and spacing is 5 μm.Photoetching
Dimension of picture, fixed size.
Passivation layer is the SiO of PECVD growth2Or the aluminum oxide film of ALD growth, SiO2Thickness range be 200-
300nm, aluminum oxide film with a thickness of 20-40nm.
Further, a kind of preparation method for the band logical solar blind ultraviolet detector polarizing selection characteristic based on gallium oxide, including
Following steps:
(1) using β phase (100) orientation gallium oxide as substrate, cleaning process is as follows: monocrystalline is successively dipped into ethyl alcohol,
Acetone, ethyl alcohol, each ultrasonic 5 minutes in deionized water, after taking-up with ratio be 1:1:4 deionized water, 30% hydrogen peroxide,
96% concentrated sulfuric acid solution carries out processing 5 minutes to monocrystalline, is rinsed well again with deionized water after taking-up, rear dry nitrogen
Drying, for use；
(2) sample cleaned up in step (1) is formed into interdigitated figure in single-crystal surface using photoetching process, each
The length of interdigital figure is 480 μm, and width is 5 μm, and spacing is 5 μm.Using electron beam deposition (EBE), magnetron sputtering or heat are steamed
The methods of hair is deposited gold electrode on interdigitated figure, electrode with a thickness of 50-200nm.By stripping technology, interdigitated is obtained
Electrode.The direction of interdigited electrode does not have particular/special requirement, preferably, interdigited electrode is along (010) or (001) direction.
(3) device surface prepared in step (2) is grown into dielectric passivation layer, preferably, passivation layer is optional
Select the SiO of PECVD growth2Or the aluminum oxide film of ALD growth, the growth temperature of dielectric passivation layer is at 350 DEG C or less.And
Expose a part of electrode by constituency etching technics, to extraction electrode.
(4) it is placed in one side at 2-5mm above the device that step (3) obtains and is oriented perpendicularly to bottom gallium oxide substrate
β phase oxidation algan single crystal prepares band logical solar blind ultraviolet detector using the polarization selection characteristic of gallium oxide single crystal.
This method is equally applicable to the β phase oxidation algan single crystal that crystal lattice orientation is (010) or (001), utilizes crystal lattice orientation
Band logical solar blind ultraviolet detector similar in the equally available wave band of β phase oxidation algan single crystal for (010) or (001).
The invention has the advantages that: preparation process of the present invention is simple, it is only necessary to which, by two step photoetching processes, a single metal deposits work
Skill and a step etching technics can be completed；Using the polarization characteristic of β phase oxidation algan single crystal as filter, principle is simple, filter
Wave effect is good.Using commercialized preparation method, process controllability is strong, easy to operate, can large area preparation, it is reproducible.It is above-mentioned
Device has encapsulating structure, and the output of array signal may be implemented.This detector can by β phase oxidation gallium in (010) and
(001) polarization in [and (100)] direction selects characteristic, realizes effective filtering clutter, enhances the inhibiting effect to shortwave, realizes
The solar blind ultraviolet detector of narrowband；Panel detector structure is simple, and cost is relatively low, inhibits higher, is conducive to promote the use of.
Detailed description of the invention
Fig. 1 is the knot with the method for the present invention band logical solar blind ultraviolet detector obtained for polarizing selection characteristic based on gallium oxide
Structure schematic diagram；
Fig. 2 is the transmitted light that the gallium oxide of the orientation of different crystalline lattice used in the present invention obtains under the conditions of different polarization
Spectrum when the light of different polarization passes through different crystal orientations, has the difference of apparent band gap；
Fig. 3 is that the solar blind light electric explorer based on gallium oxide single crystal made from the method for the present invention (does not include serving as optical filtering
The gallium oxide single crystal of effect) I-V curve under dark, 365nm and 254nm (power 8W) illumination；
Fig. 4 is that the solar blind light electric explorer based on gallium oxide single crystal made from the method for the present invention (does not include serving as optical filtering
The gallium oxide single crystal of effect) responsiveness-photon energy curve under different polarization light；
Fig. 5 is the sound with the method for the present invention band logical solar blind ultraviolet detector obtained for polarizing selection characteristic based on gallium oxide
Response-photon energy curve has apparent band logical performance.
Specific embodiment
The present invention is further illustrated below in conjunction with example.The band logical day blind ultraviolet detection of selection characteristic is polarized based on gallium oxide
Device, the β phase oxidation gallium list being orientated by the gallium oxide substrate of β phase, Au interdigited electrode, dielectric passivation layer and another allomeric
Crystalline substance composition, the gallium oxide substrate thickness of the β phase is 100-500 μm, by (100) [or (010), (001)] single crystalline substrate 11
And the interdigited electrode 12 that deposited metal obtains, bottom gallium oxide is oriented perpendicularly in dielectric passivation layer 13 and face
(100) optical filter based on polarised light that [or (010), (001)] gallium oxide single crystal 14 is formed.
Au interdigited electrode is located on the gallium oxide substrate of β phase, electrode with a thickness of 50-200nm, the length of interdigital figure
It is 480 μm, width is 5 μm, and spacing is 5 μm, and passivation layer is the SiO of PECVD growth2Or the aluminum oxide film of ALD growth, device
Top 2-5mm at place another gallium oxide single crystal, the crystal orientation of the gallium oxide single crystal is identical with substrate, and area is slightly larger than serving as a contrast
Bottom, it is important that gallium oxide substrate is oriented perpendicularly in its face.
The transmitted spectrum that cleaned gallium oxide single crystal substrate carries out polarization independent is measured first, determines gallium oxide single crystal
Band gap and polarised light dependence, confirmation gallium oxide single crystal can be used for realizing based on its polarize selection characteristic band logical day blind purple
External detector；The transmissivity of gallium oxide single crystal and the relationship of wavelength are as shown in Figure 2.For (100) crystal orientation gallium oxide single crystal and
Speech, direction of an electric field is respectively 4.52eV and 4.79eV along the optical energy gap of (001) and (010) crystal orientation.It will clean up
(100) crystal orientation gallium oxide single crystal substrate using photoetching process surface formed interdigited electrode figure, the length of interdigital figure
Degree is 480 μm, and width is 5 μm, and spacing is 5 μm.It is grown on the basis of interdigitated figure using the method for electron beam deposition
The Au of 200nm thickness；The base vacuum of electron beam deposition is lower than 5 × 10-7The purity of Torr, Au particle is 99.999%, Au electrode
Growth rate beThe removing that residual photoresist is realized with acetone, obtains interdigited electrode, preferably, interdigitated
Electrode is oriented parallel to (001) direction.Obtained device is subjected to surface passivation, preferably, with ALD growth 30nm's
Aluminum oxide film is as dielectric passivation layer；Wherein silicon source and oxygen source are respectively trimethyl aluminium and water, growth temperature 150
℃.Using photoetching process and etching technics, the aluminium oxide on the pad of interdigited electrode is removed, exposes pad metal, for surveying
Examination.Obtained device is subjected to polarization independent photoresponse test；Light source used is the xenon lamp of ultraviolet enhancing, utilizes spectrometer pair
Xenon lamp is divided to obtain monochromatic light, carries out photoresponse to device using chopper, polarizing film, current amplifier and locking phase equipment
Test.The responsiveness of the device-photon energy curve is as shown in figure 4, it can be seen from the figure that when direction of an electric field is parallel to
(010) and when (001) direction, the photoresponse of device has apparent difference, this is because the polarization characteristic of gallium oxide substrate is determined
Fixed.The β phase oxidation algan single crystal that bottom gallium oxide substrate is oriented perpendicularly in one side is placed above the above-mentioned device at 2-5mm,
Band logical solar blind ultraviolet detector is formed, device junction composition is as shown in Figure 1.It is inclined in removal using the method for above-mentioned test responsiveness
It shakes under conditions of piece, the responsiveness of measurement device, responsiveness-photon energy curve is as shown in figure 5, therefrom can see that device
With apparent band logical performance, when chopping frequency is 17Hz, highest responsiveness is worth at 4.73eV for 0.234A/W device,
The halfwidth of response curve is 0.19eV, inhibits ratio more than 300.By changing chopping frequency, available device is in lasting light
Response time according under is about 10ms.
Claims (5)
1. a kind of band logical solar blind ultraviolet detector for polarizing selection characteristic based on gallium oxide, characterized in that the gallium oxide including β phase
The β phase oxidation algan single crystal optical filter that substrate, metal interdigited electrode, dielectric passivation layer and another allomeric are orientated, In
(100), deposited metal obtains interdigited electrode array in the single crystalline substrate of (001) or (010) β phase, and then covering insulation is situated between
Matter passivation layer, the dielectric passivation layer leak out metal interdigited electrode；Gallium oxide single crystal optical filter is to be located at Au interdigitated
It is placed at the top 2-5 mm of electrode device, the crystal orientation of gallium oxide single crystal optical filter is identical as substrate, and area is greater than substrate,
Gallium oxide single crystal filters unilateral interior crystal orientation perpendicular to gallium oxide substrate；Passivation layer is the SiO of PECVD growth2Or ALD growth
Aluminum oxide film, SiO2Thickness range be 200-300 nm, aluminum oxide film with a thickness of 20-40 nm；
The gallium oxide substrate thickness of the β phase is 100-500 μm, and metal interdigited electrode is Au electrode, positioned at the oxidation of β phase
On gallium substrate；The direction of interdigited electrode is along (010) or (001) direction.
2. the band logical solar blind ultraviolet detector according to claim 1 for polarizing selection characteristic based on gallium oxide, characterized in that
Electrode with a thickness of 50-200 nm, the length of interdigital figure is 480 μm, and width is 5 μm, and spacing is 5 μm.
3. -2 described in any item band logical solar blind ultraviolet detectors for polarizing selection characteristic based on gallium oxide according to claim 1
Preparation method, characterized in that include the following steps:
(1) using the gallium oxide of β phase (100) orientation as substrate, cleaning；
(2) sample cleaned up in step (1) is formed into interdigitated figure in single-crystal surface using photoetching process；Utilize electricity
Beamlet deposits (EBE), and magnetron sputtering or thermal evaporation method are deposited gold electrode on interdigitated figure, electrode with a thickness of 50-200
nm；By stripping technology, interdigited electrode is obtained；
(3) device surface prepared in step (2) is grown into dielectric passivation layer, passivation layer selects the SiO of PECVD growth2
Or the aluminum oxide film of ALD growth, the growth temperature of dielectric passivation layer is 350oC or less；And pass through constituency etching technics
Expose a part of electrode, to extraction electrode；
(4) the β phase that bottom gallium oxide substrate is oriented perpendicularly in one side is placed above the device that step (3) obtains at 2-5 mm
Gallium oxide single crystal prepares band logical solar blind ultraviolet detector using the polarization selection characteristic of gallium oxide single crystal.
4. preparation method according to claim 3, characterized in that cleaning process is as follows: monocrystalline is successively dipped into ethyl alcohol,
Acetone, ethyl alcohol, each ultrasonic 5 minutes in deionized water, after taking-up with ratio be 1:1:4 deionized water, 30% hydrogen peroxide,
96% concentrated sulfuric acid solution carries out processing 5 minutes to monocrystalline, is rinsed well again with deionized water after taking-up, rear dry nitrogen
Drying, for use.
5. preparation method according to claim 3, characterized in that the gallium oxide single crystal of application (010) or (001) orientation,
Obtain band logical solar blind ultraviolet detector.
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| CN1260829C (en) * | 2004-08-17 | 2006-06-21 | 浙江大学 | Photoconductive type ultraviolet detector |
| CN101967680B (en) * | 2010-11-04 | 2012-02-01 | 山东大学 | Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate |
| CN105552160A (en) * | 2016-03-13 | 2016-05-04 | 浙江理工大学 | Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof |
| CN105655434B (en) * | 2016-03-13 | 2020-06-23 | 金旺康 | Ultraviolet detection device based on gallium oxide nanowire array and preparation method thereof |
| CN107507876B (en) * | 2017-08-28 | 2020-11-27 | 北京邮电大学 | beta-Ga2O3Solar-based blind ultraviolet photoelectric detector array and preparation method thereof |
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