CN110808296B - Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure - Google Patents
Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure Download PDFInfo
- Publication number
- CN110808296B CN110808296B CN201911007238.6A CN201911007238A CN110808296B CN 110808296 B CN110808296 B CN 110808296B CN 201911007238 A CN201911007238 A CN 201911007238A CN 110808296 B CN110808296 B CN 110808296B
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- band
- nitride film
- gap
- narrow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 229910052582 BN Inorganic materials 0.000 claims abstract description 134
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 134
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000969 carrier Substances 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 124
- 239000010936 titanium Substances 0.000 claims description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 43
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 230000004298 light response Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000011045 prefiltration Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoconductive deep ultraviolet monochromatic photoelectric detector with a double-layer semiconductor structure. The device comprises an insulating substrate, a narrow-band-gap boron nitride film and a wide-band-gap boron nitride film which are sequentially stacked from bottom to top, wherein the narrow-band-gap boron nitride film covers the upper surface of the insulating substrate, and the wide-band-gap boron nitride film covers the upper surface of the narrow-band-gap boron nitride film; two grid-shaped Ti metal electrodes are embedded in the narrow-band-gap boron nitride film; the response wavelength of the detector is adjusted in the deep ultraviolet band by adjusting the band gaps of the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film and the band gap difference between the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film. According to the invention, through the boron nitride layered structure with different band gaps, monochromatic light response is realized, the detection effect is good, the monochromaticity is good, the response wavelength and the response bandwidth of the detector can be simply realized, and the collection capability of the electrode on photon-generated carriers is improved.
Description
Technical Field
The invention belongs to the field of photoelectric detection, and particularly relates to a photoconductive deep ultraviolet monochromatic photoelectric detector with a double-layer semiconductor structure.
Background
In recent years, there has been an increasing demand for photodetection, particularly ultraviolet detection technology. The heart of the photodetection technology is the photodetector. The photoelectric detector comprises a charge coupled device, a photomultiplier tube and a semiconductor photoelectric tube. The semiconductor photoelectric detector has low power consumption and small volume, and is a mainstream device in the current photoelectric detection field. Generally, the response bandwidth of a semiconductor photodetector is large, and when the energy of incident photons is larger than the band gap of a semiconductor material of the detector, the detectors all have response, so that the semiconductor photodetector has weak resolving power to monochromatic light. Currently, monochromatic semiconductor photodetectors generally require a prefilter or a grating, and the size and loss of the detector are large, so that the application of the detector is limited. Therefore, the semiconductor photoelectric detector without the need of a prefilter or a grating has wide application prospect.
Disclosure of Invention
In order to realize monochromatic photoelectric detection, the invention provides a photoconductive deep ultraviolet monochromatic photoelectric detector with a double-layer semiconductor structure, which is provided with a grid-shaped Ti metal electrode, and the response wavelength of the photoconductive detector is adjusted by adjusting the band gap of a boron nitride film on the basis of the grid-shaped Ti metal electrode.
The technical scheme adopted by the invention is as follows:
a photoconductive deep ultraviolet monochromatic photoelectric detector with a double-layer semiconductor structure comprises:
as shown in fig. 1 and 3, the specific implementation includes an insulating substrate, a narrow bandgap boron nitride film and a wide bandgap boron nitride film, which are sequentially stacked from bottom to top, wherein the narrow bandgap boron nitride film covers the upper surface of the insulating substrate, and the wide bandgap boron nitride film covers the upper surface of the narrow bandgap boron nitride film; two grid-shaped Ti metal electrodes are embedded in the narrow-band-gap boron nitride film, the narrow-band-gap boron nitride film completely wraps the whole grid-shaped Ti metal electrodes, the two grid-shaped Ti metal electrodes are horizontally arranged in parallel, and the two grid-shaped Ti metal electrodes are arranged along the light conduction direction; the response wavelength of the detector is adjusted in the deep ultraviolet band by adjusting the band gaps of the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film and the band gap difference between the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film.
The narrow band gap boron nitride film and the wide band gap boron nitride film are relatively speaking, wherein the larger one of the two boron nitride films is the wide band gap boron nitride film, and the smaller one is the narrow band gap boron nitride film.
Each grid-shaped Ti metal electrode has the width of 1-3 mu m and the thickness of 100-300nm, the horizontal distance between the two grid-shaped Ti metal electrodes is 1-3 mu m, and the grid-shaped Ti metal electrodes are prepared by metal titanium through a stripping process, as shown in figure 2, the two grid-shaped Ti metal electrodes are arranged in a finger-inserted electrode structure form, so that the capability of collecting photon-generated carriers can be effectively improved.
The thickness of the narrow-band-gap boron nitride film is between 300 and 500nm, two grid-shaped Ti metal electrodes are grown on the upper surface of the narrow-band-gap boron nitride film with the thickness of 100 and 200nm through a stripping process, and then the narrow-band-gap boron nitride film with the thickness of 200 and 300nm is continuously grown to completely wrap the whole grid-shaped Ti metal electrode.
The thickness of the wide band gap boron nitride film is between 200 and 300 nm.
The narrow-band-gap boron nitride film and the wide-band-gap boron nitride film are both prepared by adopting 99.99% boron nitride as a target material through a magnetron sputtering method, and are prepared by controlling gas-phase components of magnetron sputtering, wherein the gas-phase components are hydrogen and nitrogen. Thus, the method has the advantages of high deposition speed, stable performance, good film and substrate nucleation and simple operation.
The grid-shaped Ti metal electrode is made of a titanium metal material.
The insulating substrate is prepared from an insulating material, and the insulating material is preferably quartz, a monocrystalline silicon wafer with an oxide layer or a monocrystalline silicon wafer.
By adjusting the band gaps of the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film and the band gap difference between the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film, the method specifically comprises the following steps: in the process of preparing the boron nitride film, the band gap of the boron nitride film is controlled by controlling a local mode of the boron nitride film, wherein the local mode comprises a local c-axis direction, a local c-area and a local c-direction layer number, the band gap of the film is reduced by increasing the included angle between the local c-axis and the substrate plane, the band gap of the film is reduced by reducing the local c-area, and the band gap of the film is reduced by increasing the local c-direction layer number.
The local mode refers to the local periodic characteristics of hexagonal boron nitride in the boron nitride film: the local area is a region where the hexagonal boron nitride has periodic characteristics, the local c-axis orientation refers to the normal direction of the hexagonal boron nitride in the plane of the hexagonal boron nitride six-membered ring in the local area, the local c-plane area is the area of the plane of the hexagonal boron nitride six-membered ring in the local area, and the number of the local c-direction layers is the number of the layers of the six-membered ring in the local area along the c-axis.
The hexagonal boron nitride band gap is reduced by increasing the nitrogen defect density of the boron nitride film.
The preparation method of the boron nitride film specifically comprises the following steps:
1) taking an insulating substrate, sequentially placing the insulating substrate in acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
2) putting the insulating substrate on a bracket in a magnetron sputtering furnace, sealing a furnace door, and adjusting the vacuum degree in the furnace;
3) introducing mixed gas of nitrogen and hydrogen into the magnetron sputtering furnace, heating the insulating substrate to 400-500 ℃, adjusting the air pressure to 1-2.5 Pa, and carrying out magnetron sputtering for 1 hour by using boron nitride as a target material;
in the step 3), the included angle between the local c-axis direction and the film plane is regulated and controlled to be increased by increasing the sputtering power of magnetron sputtering, and the area of the local c-plane is reduced; the insulating substrate is heated, so that the temperature of the insulating substrate is improved, the included angle between the orientation of a local c axis and the plane of the thin film is regulated, controlled and increased, and the area of a local c surface is increased; or the area of the local c surface is increased by regulating and controlling by improving the air pressure during magnetron sputtering; or the nitrogen defect density in the boron nitride film is regulated and reduced by increasing the proportion of the hydrogen component of the mixed gas;
4) after magnetron sputtering, the substrate and the film are heated to 600-900 ℃, and annealing is carried out for at least 1 hour under the protection of inert gas.
In the mixed gas of the nitrogen and the hydrogen, the volume ratio of the nitrogen is 20-80%. The band gap of the prepared boron nitride film is reduced along with the increase of the proportion of nitrogen in the gas phase during preparation.
The inert gas is nitrogen or argon.
The target material used in magnetron sputtering was BN with a purity of 99.99%.
Secondly, a detection method of the photoconductive deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure comprises the following steps:
respectively applying positive and negative voltages to the two grid-shaped Ti metal electrodes to enable a small current to pass through the grid-shaped Ti metal electrodes; when light with the wavelength larger than the wavelength corresponding to the absorption band edge of the narrow-band-gap boron nitride film irradiates the photoconductive deep ultraviolet monochromatic photoelectric detector, no photo-generated carriers are generated, and the current passing through the grid-shaped Ti metal electrode is not changed; when light with the wavelength between the wavelengths corresponding to the absorption band edges of the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film is irradiated on the photoconductive deep ultraviolet monochromatic photoelectric detector, the light is absorbed by the narrow-band-gap boron nitride film, generated photon-generated carriers are collected by the electrodes, and the current passing through the grid-shaped Ti metal electrode is increased; when light with the wavelength smaller than the wavelength corresponding to the absorption band edge of the wide band gap boron nitride film irradiates the photoconductive deep ultraviolet monochromatic light detector, the light is absorbed by the wide band gap boron nitride film, the generated photon-generated carriers cannot be collected by the electrodes, and the light detector detects the light intensity change with the specific wavelength by detecting the current between the two grid-shaped Ti metal electrodes.
The specific wavelength is in the response wavelength of the narrow band gap boron nitride film, but not in the response wavelength of the wide band gap boron nitride film.
In the preparation process of the narrow-band-gap boron nitride film and the wide-band-gap boron nitride film by adopting a magnetron sputtering method, the band gap of the boron nitride film is adjusted and the response wavelength and the response bandwidth of the detector are controlled by gas-phase components during magnetron sputtering.
The photoconductive deep ultraviolet monochromatic photoelectric detector can reduce and adjust the band gap through a special means, further realize the regulation and control of the response wavelength of the detector, enlarge the detection range and enable the deep ultraviolet band to be completely covered.
The invention has the beneficial effects that:
the invention has good detection effect, simple structure and good monochromaticity and has good application prospect in the field of monochromatic photoelectric sensing.
According to the invention, monochromatic light response is realized through the boron nitride layered structure with different band gaps, and the response wavelength of the detector can be simply regulated and controlled by regulating the band gaps of the two layers of boron nitride through the gas phase components of magnetron sputtering and chemical vapor deposition. The electrode is completely wrapped in the semiconductor material, so that the collection capability of the electrode on photo-generated carriers is improved.
Drawings
FIG. 1 is a cross-sectional view of the structure of the present invention;
FIG. 2 is a top view of the present invention, with the dotted line portion being a gate Ti metal electrode;
FIG. 3 is a perspective view of the structure of the present invention;
FIG. 4 is a graph of the band gap of hexagonal boron nitride as a function of the volume ratio of nitrogen to hydrogen;
FIG. 5 is a graph of the half-width of the 1380cm-1 peak in Fourier infrared absorption spectrum of different sets of boron nitride films of example 2;
FIG. 6 is a band gap diagram of different sets of boron nitride films in example 2.
In the figure: the device comprises a wide band gap boron nitride film (1), a grid-shaped Ti metal electrode (2), a narrow band gap boron nitride film (3) and an insulating substrate (4).
Detailed Description
The invention is further illustrated by the following figures and examples.
As shown in fig. 1 and 3, the specific implementation includes an insulating substrate 4, a narrow bandgap boron nitride film 3 and a wide bandgap boron nitride film 1, which are sequentially stacked from bottom to top, the upper surface of the insulating substrate 4 is covered with the narrow bandgap boron nitride film 3, and the upper surface of the narrow bandgap boron nitride film 3 is covered with the wide bandgap boron nitride film 1; two grid-shaped Ti metal electrodes 2 are embedded in the narrow-band-gap boron nitride film 3, the narrow-band-gap boron nitride film 3 completely wraps the whole grid-shaped Ti metal electrodes 2, the two grid-shaped Ti metal electrodes 2 are horizontally arranged in parallel, and the two grid-shaped Ti metal electrodes 2 are arranged along the light conduction direction; the response wavelength of the detector is adjusted in the deep ultraviolet band by adjusting the band gaps of the narrow band gap boron nitride film 3 and the wide band gap boron nitride film 1 and the band gap difference between the two. As shown in fig. 2, two grid-like Ti metal electrodes are arranged in an interdigitated electrode structure.
In a specific implementation, two sensors with different response wavelengths are prepared. Quartz is used as an insulating substrate 4, a narrow-band-gap boron nitride film with the thickness of 200nm is grown on the insulating substrate 4 by adopting a stripping process, and then a grid-shaped Ti metal electrode is prepared on the narrow-band-gap boron nitride film, wherein the metal material is metal titanium. The thickness of the prepared electrode is about 100nm, the width of the electrode is 2 μm, the distance between the electrodes is 2 μm, and then a narrow band gap boron nitride film with the thickness of 300nm and a wide band gap boron nitride film with the thickness of 200nm are sputtered in sequence.
Growing the boron nitride film by adopting a magnetron sputtering method; BN with the purity of 99.99 percent is used as a target material in the sputtering, the volume ratio of nitrogen to hydrogen of gas phase components in the sputtering of the wide band gap boron nitride film and the narrow band gap boron nitride film is 2:1, 5:1 and 1:5, 7:8 respectively, the deposition time is 1 hour, and high-temperature annealing is carried out after the deposition.
Electrodes are led out from two ends of the detector, positive and negative voltages are applied, when the wavelength of the external light is not equal to the response wavelength of the detector, the current passing through the electrodes does not change obviously, and when the wavelength of the external light is equal to the response wavelength of the detector, the current passing through the electrodes is increased, so that the effect of detecting monochromatic light is achieved.
Example (b):
in a specific implementation, two sensors with different response wavelengths are prepared. Quartz is used as an insulating substrate 4, and the thickness is 1 mm; the thickness of the grid-shaped Ti metal electrode 2 is 100nm, the width of a single electrode is 2 mu m, and the distance is 2 mu m; the thickness of the narrow band gap boron nitride film 3 is 500nm, and the thickness of the wide band gap boron nitride film 1 is 200 nm.
The response wavelength of the detector is a wavelength within the nitrogen absorption wavelength of the narrow bandgap boron nitride film but not within the absorption wavelength of the wide bandgap boron nitride film. However, when the wavelength of the external light is larger than the response wavelength of the detector, no light-generated carriers are generated, and the current passing through the electrode is not increased. When the wavelength of the external light is equal to the response wavelength of the detector, photogenerated carriers are generated in the narrow-bandgap boron nitride film 2, the photogenerated carriers are collected by the electrodes, and the current passing through the electrodes is increased. When the wavelength of the external light is less than the response wavelength of the detector, the external light is completely absorbed by the wide band gap boron nitride film 1, the generated photon-generated carriers cannot be collected by the electrode, and the current is not increased. The intensity of the external monochromatic light can be detected by detecting the intensity of the current.
When the two prepared monochromatic deep ultraviolet sensors work at 10V voltage, the dark current is less than 100pA, the photocurrent is greater than 10nA, and the light-dark current ratio is greater than 100. The sensor response wave bands with the nitrogen-hydrogen volume ratios of 2:1 and 5:1 are 230-240nm, and the sensor response wave bands with the volume ratios of 1:5 and 7:8 are 220-230nm respectively. A grid Ti metal electrode is adopted, and the electrode is completely wrapped by a narrow-band-gap boron nitride film, so that the photocurrent of the sensor is improved by 10 times. Therefore, based on the structure, monochromatic deep ultraviolet sensors with different response wavelengths can be prepared.
Meanwhile, in specific implementation, the boron nitride film is specially prepared and implemented.
Preparation process 1:
1) taking four pieces of quartz as an insulating substrate, sequentially placing the insulating substrate in acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
2) putting a quartz substrate on a bracket in a magnetron sputtering furnace, closing the furnace door, and reducing the vacuum degree in the furnace to be not higher than 5 multiplied by 10-3Pa；
3) Introducing a mixed gas of nitrogen and hydrogen into the sputtering furnace, wherein the proportion of the nitrogen is 20%, heating the insulating substrate to 400 ℃, adjusting the air pressure to 1.5Pa, and carrying out magnetron sputtering for 1 hour;
4) and heating the substrate and the film to 700 ℃, and annealing for at least 1 hour under the protection of inert gas.
5) And (3) sequentially repeating the steps 2, 3 and 4 on the second to fourth quartz substrates, wherein the proportion of nitrogen gas during sputtering is respectively adjusted to be 46.7%, 73.3% and 100%. And measuring the absorption band edge of the prepared hexagonal boron nitride film by using an ultraviolet-visible spectrophotometer, and obtaining the band gap of the film according to the measured absorption band edge.
As shown in fig. 4, as the proportion of nitrogen gas at the time of production increases, hexagonal boron nitride decreases as the proportion of nitrogen gas at the time of production increases.
The preparation process 2:
1) taking four monocrystalline silicon wafers as insulating substrates, sequentially placing the insulating substrates in acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
2) putting a quartz substrate on a bracket in a magnetron sputtering furnace, closing the furnace door, and reducing the vacuum degree in the furnace to be not higher than 5 multiplied by 10-3Pa；
3) Introducing a mixed gas of nitrogen and hydrogen into a sputtering furnace, growing a hexagonal boron nitride film under the conditions in the table 1, and carrying out magnetron sputtering for 1 hour;
TABLE 1
| Sample numbering | 1 | 2 | 3 | 4 |
| Substrate temperature (. degree. C.) | 400 | 300 | 400 | 400 |
| Sputtering power (W) | 300 | 300 | 400 | 300 |
| Sputtering air pressure (Pa) | 1.5 | 1.5 | 1.5 | 1.0 |
4) And heating the substrate and the film to 700 ℃, and annealing for at least 1 hour under the protection of inert gas.
5) Measuring infrared absorption spectrum of sample by Fourier infrared spectrophotometer, and analyzing 1380cm-1The half-peak width of the absorption peak is determined by using purpleThe external-visible spectrophotometer measures the absorption band edge of the sample, and the band gap of the film is obtained from the measured absorption band edge.
As shown in FIG. 5, this is a 1380cm Fourier Infrared absorption spectrum of hexagonal boron nitride film grown according to the growth conditions of Table 1-1Peak half width. 1380cm-1The peak half-peak width can reflect the local mode of the sample, the smaller the area of the local c-plane, the fewer the number of local c-directional layers, the larger the half-peak width and the less influence of the local c-axis direction. The sample 1 is a control group, and the growth temperature of the sample 2 is lower, so that the area of a local c surface is smaller, and the half-peak width is larger; the sample 3 has larger sputtering power, so that the area of a local c surface is smaller and the half-peak width is larger; the sputtering pressure of the sample 4 is small, so that the number of the local c-directional layers is small, the area of the local c-plane is small, the included angle of the local c-axis is large, and the half-peak width is large.
As shown in fig. 6, the bandgaps of samples 2, 3, and 4 were all smaller than those of control 1.
Claims (10)
1. A photoconductive deep ultraviolet monochromatic photoelectric detector with a double-layer semiconductor structure is characterized in that: the device comprises an insulating substrate (4), a narrow-band-gap boron nitride film (3) and a wide-band-gap boron nitride film (1) which are sequentially stacked from bottom to top, wherein the narrow-band-gap boron nitride film (3) covers the upper surface of the insulating substrate (4), and the wide-band-gap boron nitride film (1) covers the upper surface of the narrow-band-gap boron nitride film (3); two grid-shaped Ti metal electrodes (2) are embedded in the narrow-band-gap boron nitride film (3), the narrow-band-gap boron nitride film (3) completely wraps the grid-shaped Ti metal electrodes (2) integrally, and the two grid-shaped Ti metal electrodes (2) are arranged in parallel horizontally; the response wavelength of the detector is adjusted in the deep ultraviolet waveband by adjusting the band gaps of the narrow band gap boron nitride film (3) and the wide band gap boron nitride film (1) and the band gap difference between the narrow band gap boron nitride film and the wide band gap boron nitride film, and further the deep ultraviolet monochromatic photoelectric detection of the detector is realized.
2. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 1, wherein: each grid-shaped Ti metal electrode (2) is 1-3 mu m in width and 100-300nm in thickness, the horizontal distance between the two grid-shaped Ti metal electrodes (2) is 1-3 mu m, the grid-shaped Ti metal electrodes are prepared from metal titanium through a stripping process, and the two grid-shaped Ti metal electrodes (2) are arranged in a finger-inserted electrode structure mode.
3. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 1, wherein: the thickness of the narrow-band-gap boron nitride film (3) is between 300 and 500nm, two grid-shaped Ti metal electrodes (2) are grown on the upper surface of the narrow-band-gap boron nitride film (3) with the thickness of 100 and 200nm through a stripping process, and then the narrow-band-gap boron nitride film (3) with the thickness of 200 and 300nm is continuously grown to completely wrap the whole grid-shaped Ti metal electrodes (2).
4. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 1, wherein: the thickness of the wide band gap boron nitride film (1) is between 200 and 300 nm.
5. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 1, wherein: the narrow-band-gap boron nitride film (3) and the wide-band-gap boron nitride film (1) are both prepared by adopting 99.99% boron nitride as a target material through a magnetron sputtering method, and are prepared by controlling gas-phase components of magnetron sputtering, wherein the gas-phase components are hydrogen and nitrogen.
6. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 1, wherein: by adjusting the band gaps of the narrow-band-gap boron nitride film (3) and the wide-band-gap boron nitride film (1) and the band gap difference between the two films, the method specifically comprises the following steps: in the process of preparing the boron nitride film, the band gap of the boron nitride film is controlled by controlling a local mode of the boron nitride film, wherein the local mode comprises a local c-axis direction, a local c-area and a local c-direction layer number, the band gap of the film is reduced by increasing the included angle between the local c-axis and the substrate plane, the band gap of the film is reduced by reducing the local c-area, and the band gap of the film is reduced by increasing the local c-direction layer number.
7. The photoconduction type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 6, wherein: the band gap of the boron nitride film is reduced by increasing the nitrogen defect density of the boron nitride film.
8. The photoconduction-type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 7, wherein: the preparation method of the boron nitride film specifically comprises the following steps:
1) taking an insulating substrate, sequentially placing the insulating substrate in acetone, absolute ethyl alcohol and deionized water for ultrasonic cleaning, and drying;
2) putting the insulating substrate into a magnetron sputtering furnace, sealing a furnace door, and adjusting the vacuum degree in the furnace;
3) introducing mixed gas of nitrogen and hydrogen into a magnetron sputtering furnace, and carrying out magnetron sputtering for 1 hour by taking boron nitride as a target material;
in the step 3), the included angle between the local c-axis direction and the film plane is regulated and controlled to be increased by increasing the sputtering power of magnetron sputtering, and the area of a local c surface is reduced; the insulating substrate is heated, so that the temperature of the insulating substrate is improved, the included angle between the orientation of a local c axis and the plane of the thin film is regulated, controlled and increased, and the area of a local c surface is increased; or the area of the local c surface is increased by regulating and controlling by improving the air pressure during magnetron sputtering; or the nitrogen defect density in the boron nitride film is regulated and reduced by increasing the proportion of the hydrogen component of the mixed gas;
4) and after magnetron sputtering, annealing for at least 1 hour under the protection of inert gas.
9. The photoconduction-type deep ultraviolet monochromatic photoelectric detector with the double-layer semiconductor structure as claimed in claim 8, wherein: in the mixed gas of the nitrogen and the hydrogen, the volume ratio of the nitrogen is 20-80%.
10. A method for detecting a photoconductive deep ultraviolet monochromatic photodetector with a double-layer semiconductor structure according to any one of claims 1 to 9, characterized in that: positive and negative voltages are respectively applied to the two grid-shaped Ti metal electrodes (2), so that current passes through the grid-shaped Ti metal electrodes (2); when light with the wavelength larger than the wavelength corresponding to the absorption band edge of the narrow-band-gap boron nitride film (3) irradiates the photoconductive deep ultraviolet monochromatic photoelectric detector, no photogenerated carriers are generated, and the current passing through the grid-shaped Ti metal electrode (2) is not changed; when light with the wavelength between the narrow-band-gap boron nitride film (3) and the wide-band-gap boron nitride film (1) absorbs the light with the wavelength corresponding to the band edge and irradiates on the photoconductive deep ultraviolet monochromatic photoelectric detector, the light is absorbed by the narrow-band-gap boron nitride film (3), the generated photogenerated carriers are collected by the electrodes, and the current passing through the grid-shaped Ti metal electrode (2) is increased; when light with the wavelength smaller than the wavelength corresponding to the absorption band edge of the wide band gap boron nitride film (1) irradiates the photoconductive deep ultraviolet monochromatic light detector, the light is absorbed by the wide band gap boron nitride film (1), the generated photon-generated carriers cannot be collected by the electrodes, and the light detector detects the light intensity change with the specific wavelength by detecting the current between the two grid-shaped Ti metal electrodes (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911007238.6A CN110808296B (en) | 2019-10-22 | 2019-10-22 | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911007238.6A CN110808296B (en) | 2019-10-22 | 2019-10-22 | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110808296A CN110808296A (en) | 2020-02-18 |
| CN110808296B true CN110808296B (en) | 2021-04-27 |
Family
ID=69488838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911007238.6A Expired - Fee Related CN110808296B (en) | 2019-10-22 | 2019-10-22 | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110808296B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111710752B (en) * | 2020-06-24 | 2023-05-05 | 吉林大学 | MSM type deep ultraviolet photoelectric detector based on cubic boron nitride thick film and preparation method thereof |
| CN111710750B (en) * | 2020-06-24 | 2022-12-13 | 吉林大学 | Deep ultraviolet photoelectric detector based on hexagonal boron nitride thick film and preparation method |
| CN114019561A (en) * | 2021-11-08 | 2022-02-08 | 中国原子能科学研究院 | Neutron detector and detection system |
| CN114664967A (en) * | 2022-03-09 | 2022-06-24 | 吉林大学 | Hexagonal boron nitride deep ultraviolet photoelectric detector with embedded MSM structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681938A (en) * | 2013-11-19 | 2014-03-26 | 浙江大学 | Boron nitride-zinc oxide quantum dot hybrid field effect opto-transistor and manufacturing method thereof |
| CN104617180A (en) * | 2015-01-16 | 2015-05-13 | 浙江大学 | Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof |
| CN110350041A (en) * | 2019-06-06 | 2019-10-18 | 浙江大学 | Photoconduction type photodetector based on upper and lower asymmetric gate-shaped electrode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379271B2 (en) * | 2013-05-24 | 2016-06-28 | The United States Of America As Represented By The Secretary Of The Army | Variable range photodetector and method thereof |
-
2019
- 2019-10-22 CN CN201911007238.6A patent/CN110808296B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103681938A (en) * | 2013-11-19 | 2014-03-26 | 浙江大学 | Boron nitride-zinc oxide quantum dot hybrid field effect opto-transistor and manufacturing method thereof |
| CN104617180A (en) * | 2015-01-16 | 2015-05-13 | 浙江大学 | Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof |
| CN110350041A (en) * | 2019-06-06 | 2019-10-18 | 浙江大学 | Photoconduction type photodetector based on upper and lower asymmetric gate-shaped electrode |
Non-Patent Citations (1)
| Title |
|---|
| High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride;Heng Liu等;《Nanoscale》;20180227;第10卷;第5559-5565页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110808296A (en) | 2020-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110808296B (en) | Photoconductive deep ultraviolet monochromatic photoelectric detector with double-layer semiconductor structure | |
| Wu | High-efficiency polycrystalline CdTe thin-film solar cells | |
| CN107369763A (en) | Based on Ga2O3Photodetector of/perovskite hetero-junctions and preparation method thereof | |
| JPH06204526A (en) | Photovoltaic element | |
| Matsui et al. | Advanced materials processing for high-efficiency thin-film silicon solar cells | |
| Chen et al. | Photoelectrical and low-frequency noise characteristics of ZnO nanorod photodetectors prepared on flexible substrate | |
| Gordijn et al. | High‐efficiency µc‐Si solar cells made by very high‐frequency plasma‐enhanced chemical vapor deposition | |
| CN103500776A (en) | Preparation method of silica-based CdZnTe film ultraviolet light detector | |
| Negami et al. | Real time composition monitoring methods in physical vapor deposition of Cu (In, Ga) Se2 thin films | |
| He et al. | Study of CdTe/ZnTe composite absorbing layer deposited by pulsed laser deposition for CdS/CdTe solar cell | |
| JPH04266066A (en) | Photoelectromotive force element | |
| CN109256438A (en) | A kind of silicon substrate amorphous oxide gallium film solar blind light electric transistor and its manufacturing method | |
| Dornstetter et al. | Deposition of high-efficiency microcrystalline silicon solar cells using SiF 4/H 2/Ar mixtures | |
| Zheng et al. | An effective air heat-treatment strategy of precursor films in search of high open-circuit voltage for efficient CZTSSe cells | |
| Jiang et al. | MgxZn1− xO solar-blind photodetectors fabricated by RF magnetron sputtering with combinatorial targets | |
| Xing et al. | High-Performance Ultraviolet Photodetector Based on Polycrystalline ${\rm SrTiO} _ {3} $ Thin Film | |
| CN109037034B (en) | Antimony selenide thin film, preparation method thereof and solar cell applying antimony selenide thin film | |
| Chen et al. | Ga/(Ga+ In) grading effects on ultra-thin (UT) CIGS solar cell | |
| Duenow et al. | Oxygen incorporation during fabrication of substrate CdTe photovoltaic devices | |
| Liu | Fabrication and photovoltaic effect of ZnO/silicon nanopillars heterojunction solar cell | |
| CN103715282B (en) | Cu2ZnSnS4 thin-film solar cell, preparation method and photoelectric conversion system thereof | |
| Yang et al. | The origin of the triple-color photodetectors based on the ZnO/MgZnO films | |
| CN107170853A (en) | A kind of preparation method of the GaN/CdZnTe thin film ultraviolet detectors of composite construction | |
| CN109301002B (en) | Based on (Al)xGa1-x)2O3Ultraviolet photoelectric detector of material MSM structure and preparation method thereof | |
| CN108546918B (en) | Ultra-wide bandgap oxide alloy semiconductor epitaxial thin film material and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210427 Termination date: 20211022 |