CN105552160A - Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof - Google Patents
Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof Download PDFInfo
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000010931 gold Substances 0.000 title claims abstract description 40
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 40
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 30
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000825 ultraviolet detection Methods 0.000 title abstract description 7
- 239000002105 nanoparticle Substances 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 34
- 238000000137 annealing Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 238000004062 sedimentation Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000005728 strengthening Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 9
- 239000013077 target material Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 4
- 230000008859 change Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to an ultraviolet detection device based on a gallium oxide thin film and a preparation method thereof, in particular to an ultraviolet detection device based on a gold nanoparticle enhanced Ga2O3 thin film and a preparation method thereof. The preparation method includes the steps that a layer of Ga2O3 thin film is deposited on a Si substrate according to the radio-frequency magnetron sputtering technology; then, a layer of gold thin film is deposited on the surface of the Ga2O3 thin film, the obtained gold thin film is subjected to spheroidizing annealing, and thus gold particles are obtained; finally, a layer of gold thin film interdigital electrodes are deposited on the Au-Ga2O3 thin film with a mask. A photoelectric property testing result of the ultraviolet detection device shows that the device has good photoelectric responses. The ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film and the preparation method thereof have the advantages that the prepared ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film is stable in property, capable of making sensitive responses and small in dark current and has good potential application; besides, the preparation method is strong in process controllability, easy to implement and good in universality, has restorability in repeated testing and has broad application prospects.
Description
Technical field
Based on a ultraviolet detector for gallium oxide film, specifically refer to a kind of based on golden nanometer particle enhancing Ga
2o
3ultraviolet detector of film and preparation method thereof.
Technical background
Along with the development of ultraviolet detection technology, ultraviolet detector is more and more subject to people's attention.Apply in business and military affairs more has photomultiplier before.Photomultiplier needs to work under high voltages, and volume heavy, easily damage, have significant limitation to practical application.Semiconductor material with wide forbidden band has superior physicochemical characteristics and potential technical advantage, in high frequency, high temperature, high power and short wavelength applications, there is superior operating characteristic with the device that they make, make them have better development prospect at military, civil area, receive the concern of semiconductor industry personage always.Along with the breakthrough of Crystal Growth Technique and heterogenous junction epitaxy technology, the development and application of wide bandgap semiconductor ultraviolet detector (such as SiC, GaN, ZnO etc.) is developed rapidly.
β-Ga
2o
3the β-Ga of a kind of semi-conducting material with deep ultraviolet characteristic, 200nm
2o
3film can reach the transmitance of more than 80% in UV light region, compensate for traditional TCO material in the low shortcoming of deep ultraviolet region permeability; And because wider band gap, β-Ga
2o
3the light of shorter wavelength can be sent, when by the rare earth element such as doped with Mn, Cr, Er, can also be used for making deep UV (ultraviolet light) electric device.This patent has utilized radio frequency magnetron sputtering method to prepare, and golden nanometer particle strengthens β-Ga
2o
3membrane structure, and be assembled into UV photodetector further by micro-nano process technology.This device has good photoelectric respone, and good stability is quick on the draw, the advantages such as processing technology is reproducible, sound construction, has great application prospect.
Summary of the invention
The object of this invention is to provide a kind of highly sensitive, good stability, the response time is short, detectivity the is strong ultraviolet detector strengthening gallium oxide film based on golden nanometer particle and preparation method thereof.
Technical scheme of the present invention is:
Strengthen a ultraviolet detector for gallium oxide film based on golden nanometer particle, it is characterized in that by Ga
2o
3film, gold nano grain, N-shaped Si substrate and golden interdigital electrode form.
The golden nanometer particle being illustrated in figure 1 the present invention's design strengthens the schematic diagram of the ultraviolet detector of gallium oxide film, and it is at Ga that described golden nanometer particle strengthens gallium oxide membrane structure
2o
3film surface growth golden nanometer particle, makes the UV photodetector part with plasmon resonance enhancement effect.
Described N-shaped Si substrate strengthens the substrate of gallium oxide film as preparing golden nanometer particle.
Described a kind of preparation method strengthening the ultraviolet detector of gallium oxide film based on golden nanometer particle, adopt micro-nano process technology, step is as follows:
1.n type Si substrate pre-treatment: N-shaped Si substrate is put into V (HF): V (H
2o
2soak to remove natural oxidizing layer in the solution of)=l:5, then with the ultrasonic cleaning respectively of acetone, ethanol and deionized water, and vacuumize;
2. place target and substrate: Ga
2o
3target is placed on the target platform position of rf magnetron sputtering system, by step 1) process after N-shaped Si substrate be fixed on sample carrier, put vacuum chamber into;
3.Ga
2o
3film deposition process: first cavity is vacuumized, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 60-80W, and sedimentation time is 1-2 hour;
4. golden nanometer particle preparation process: first cavity is vacuumized, heating steps 3) Ga that obtains
2o
3-N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 40-60W, and sedimentation time is 10-30 second; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1-2 hour;
5. the preparation of device electrode: utilize mask plate and by radiofrequency magnetron sputtering technology at Ga
2o
3depositing a layer thickness above film is that the gold thin film interdigital electrode of 100 nanometers is as measurement electrode.
Preferably, in described step 3, the heating-up temperature of N-shaped Si substrate is 700 DEG C, and the degree of ionization after cavity vacuumizes is 1.0 × 10
-4pa, the pressure after vacuum chamber adjustment is 1-3Pa, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 70w, and sedimentation time is 1-1.5 hour.
Preferably, in described step 4, Ga
2o
3the heating-up temperature of-N-shaped Si substrate is 25 DEG C, and the degree of ionization after cavity vacuumizes is 1.0 × 10
-4pa, the pressure after vacuum chamber adjustment is 0.1-0.5Pa, and the distance of gold target material and ITO substrate is set as 5 centimetres, and sputtering power is 50w, and sedimentation time is 10-30 second, and annealing temperature is 450 DEG C, and annealing time is 1-2 hour.
Carrying out photoelectric properties test to the ultraviolet detector based on golden nanometer particle enhancing gallium oxide film built is at interdigital electrode two ends by probe points, making alive 0.5 volt between electrode, record the I-t characteristic curve that golden nanometer particle strengthens gallium oxide film, the switch irradiated by controlling ultraviolet light (254nm) finds that device has good photoelectric respone.
Advantage of the present invention:
1, in preparation process of the present invention, prepared has excellent photoelectric characteristic based on golden nanometer particle enhancing gallium oxide film;
2, the ultraviolet detector prepared by the present invention has golden nanometer particle-Ga
2o
3membrane structure, under ultraviolet lighting, produces a large amount of electronics and hole rapidly, and during decay, compound is rapid and complete, improves detector sensitivity;
3, the ultraviolet detector stable performance prepared of the present invention, be quick on the draw, dark current is little, can be applicable to the detection such as fire alarm, high-voltage line corona;
4, the present invention adopts micro-nano process technology to prepare the ultraviolet detector strengthening gallium oxide film based on golden nanometer particle, and process controllability is strong, simple to operate, and retest has restorability.
Accompanying drawing explanation
Fig. 1 is the schematic diagram strengthening gallium oxide film based on golden nanometer particle of the inventive method design.
Fig. 2 is ESEM (SEM) photo strengthening gallium oxide film based on golden nanometer particle obtained by the inventive method.
Fig. 3 records by the inventive method the V-I curve chart that the electrode voltage strengthening the ultraviolet detector of gallium oxide film based on golden nanometer particle is 2V.
Fig. 4 records by the inventive method the I-t curve chart that the electrode voltage strengthening the ultraviolet detector of gallium oxide film based on golden nanometer particle is 0.5V.
Embodiment
The present invention is further illustrated below in conjunction with example.
Embodiment 1
Step is as follows:
1.n type Si substrate pre-treatment: N-shaped Si substrate is put into V (HF): V (H
2o
2soak to remove natural oxidizing layer in the solution of)=l:5, then with the ultrasonic cleaning respectively of acetone, ethanol and deionized water, and vacuumize;
2. place target and substrate: Ga
2o
3target is placed on the target platform position of rf magnetron sputtering system, by step 1) process after N-shaped Si substrate be fixed on sample carrier, put vacuum chamber into;
3.Ga
2o
3film deposition process: first cavity is vacuumized, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 60W, and sedimentation time is 1 hour;
4. golden nanometer particle preparation process: first cavity is vacuumized, heating steps 3) Ga that obtains
2o
3-N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 50W, and sedimentation time is 20 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1 hour;
5. the preparation of device electrode: utilize mask plate and by radiofrequency magnetron sputtering technology at Ga
2o
3depositing a layer thickness above film is that the gold thin film interdigital electrode of 100 nanometers is as measurement electrode.
By gained golden nanometer particle/Ga in step 4
2o
3film is put in ESEM (SEM) and is observed, and finds that golden nanometer particle is evenly distributed, is of a size of 20-30nm (as Fig. 2).Golden nanometer particle strengthen gallium oxide film interdigital electrode two ends apply voltage and carry out photoelectric properties measurement, instrumentation plan is as Fig. 1, and itself V-I and I-t curve is as shown in Figure 3 and Figure 4.There is obvious golden nanometer particle plasmon resonance enhancement effect in the V-I curve of Fig. 3, add the intensity of acquisition of signal.When applied voltage is 2 volts and under the irradiation of 254nm ultraviolet light, ultraviolet light phase induced current obviously increases.Due to surface phasmon effect, the photoelectric properties being embedded with the wide bandgap semiconductor composite construction of the nano particle of noble metal can be greatly improved, and conductivity strengthens.I-t curve in Fig. 4 measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change, and indicates the high sensitivity of detector.
Embodiment 2
Step (1), (2) are all identical with embodiment 1 with (5).First vacuumized by cavity in step 3, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 70W, and sedimentation time is 1 hour; First vacuumized by cavity in step 4, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 50W, and sedimentation time is 10 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1 hour.
The interdigital electrode two ends applying voltage strengthening gallium oxide film at golden nanometer particle carries out photoelectric properties measurement, V-I measure to apply maximum voltage be 2 volts, I-t curve measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change.Test result is all similar to Example 1.
Embodiment 3
Step (1), (2) are all identical with embodiment 1 with (5).First vacuumized by cavity in step 3, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 70W, and sedimentation time is 1 hour; First vacuumized by cavity in step 4, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 60W, and sedimentation time is 15 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1 hour.
The interdigital electrode two ends applying voltage strengthening gallium oxide film at golden nanometer particle carries out photoelectric properties measurement, V-I measure to apply maximum voltage be 2 volts, I-t curve measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change.Test result is all similar to Example 1.
Embodiment 4
Step (1), (2) are all identical with embodiment 1 with (5).First vacuumized by cavity in step 3, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 40W, and sedimentation time is 1 hour; First vacuumized by cavity in step 4, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 60W, and sedimentation time is 30 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1.5 hours.
The interdigital electrode two ends applying voltage strengthening gallium oxide film at golden nanometer particle carries out photoelectric properties measurement, V-I measure to apply maximum voltage be 2 volts, I-t curve measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change.Test result is all similar to Example 1.
Embodiment 5
Step (1), (2) are all identical with embodiment 1 with (5).First vacuumized by cavity in step 3, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 40W, and sedimentation time is 1 hour; First vacuumized by cavity in step 4, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 0.5 centimetre, and sputtering power is 40W, and sedimentation time is 10 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1 hour.
The interdigital electrode two ends applying voltage strengthening gallium oxide film at golden nanometer particle carries out photoelectric properties measurement, V-I measure to apply maximum voltage be 2 volts, I-t curve measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change.Test result is all similar to Example 1.
Embodiment 6
Step (1), (2) are all identical with embodiment 1 with (5).First vacuumized by cavity in step 3, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 50W, and sedimentation time is 1.5 hours; First vacuumized by cavity in step 4, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 70W, and sedimentation time is 10 seconds; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1 hour.
The interdigital electrode two ends applying voltage strengthening gallium oxide film at golden nanometer particle carries out photoelectric properties measurement, V-I measure to apply maximum voltage be 2 volts, I-t curve measures under the voltage of 0.5 volt, finds to control ultraviolet violet light switch, and electric current is instantaneous to change.Test result is all similar to Example 1.
Claims (6)
1. strengthen a ultraviolet detector for gallium oxide film based on golden nanometer particle, it is characterized in that by Ga
2o
3film, gold nano grain, N-shaped Si substrate and golden interdigital electrode form.
2. the ultraviolet detector strengthening gallium oxide film based on golden nanometer particle according to claim 1, is characterized in that described Ga
2o
3film surface growth gold nano grain, described N-shaped Si substrate strengthens the substrate of gallium oxide film as preparing gold nano grain, the thickness of described golden interdigital electrode is 100nm, is positioned at Ga
2o
3film surface, interdigital spacing is 100 microns.
3. strengthen a preparation method for the ultraviolet detector of gallium oxide film based on golden nanometer particle, it is characterized in that the method has following steps:
1) N-shaped Si substrate pre-treatment: N-shaped Si substrate is put into V (HF): V (H
2o
2soak to remove natural oxidizing layer in the solution of)=l:5, then with the ultrasonic cleaning respectively of acetone, ethanol and deionized water, and vacuumize;
2) target and substrate is placed: Ga
2o
3target is placed on the target platform position of rf magnetron sputtering system, by step 1) process after N-shaped Si substrate be fixed on sample carrier, put vacuum chamber into;
3) Ga
2o
3film deposition process: first cavity is vacuumized, heating N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, Ga
2o
3the distance of target and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 60-80W, and sedimentation time is 1-2 hour;
4) golden nanometer particle preparation process: first cavity is vacuumized, heating steps 3) Ga that obtains
2o
3-N-shaped Si substrate, passes into argon gas, the pressure in adjustment vacuum chamber; Wherein, the distance of gold target material and N-shaped Si substrate is set as 5 centimetres, and sputtering power is 40-60W, and sedimentation time is 10-30 second; Then gold thin film transferred in high temperature furnace and anneal, obtain gold nano grain, annealing temperature is 450 DEG C, and annealing time is 1-2 hour;
5) preparation of device electrode: utilize mask plate and by radiofrequency magnetron sputtering technology at Ga
2o
3depositing a layer thickness above film is that the gold thin film interdigital electrode of 100 nanometers is as measurement electrode.
4. preparation method according to claim 3, is characterized in that described step 3) in, the heating-up temperature of N-shaped Si substrate is 700 DEG C.
5. preparation method according to claim 3, is characterized in that described step 3) in, the pressure after vacuum chamber adjustment is 1-3Pa, and sputtering power is 60-80W, and sedimentation time is 1-1.5 hour.
6. preparation method according to claim 3, is characterized in that described step 4) in, Ga
2o
3the heating-up temperature of-N-shaped Si substrate is 25 DEG C, and the pressure after vacuum chamber adjustment is 0.1-0.5Pa, and sputtering power is 40-60W, and sedimentation time is 10-30 second.
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|---|---|---|---|
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024971A (en) * | 2016-05-28 | 2016-10-12 | 复旦大学 | Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor |
| CN106711270A (en) * | 2017-01-09 | 2017-05-24 | 福建农林大学 | Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof |
| CN107393253A (en) * | 2017-07-30 | 2017-11-24 | 王旭兰 | Long distance electric fire hazard monitoring system based on hetero-junction thin-film and preparation method thereof |
| WO2018103647A1 (en) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Method for fabricating ultraviolet photodetector based on ga2o3 material |
| CN108807586A (en) * | 2018-04-28 | 2018-11-13 | 南京大学 | A kind of band logical solar blind ultraviolet detector and preparation method thereof polarizing selection characteristic based on gallium oxide |
| CN109647389A (en) * | 2019-01-21 | 2019-04-19 | 北京工业大学 | Utilize Au nano-particle reinforcement Ga2O3The method of film photocatalysis degradation organic contaminant |
| CN109713058A (en) * | 2017-10-25 | 2019-05-03 | 中国科学院物理研究所 | The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing |
| CN109755333A (en) * | 2019-01-10 | 2019-05-14 | 北京交通大学 | A kind of photodetector based on graphene |
| CN110085661A (en) * | 2019-04-23 | 2019-08-02 | 中山大学 | A kind of gallium oxide semiconductor laminated structure and preparation method thereof |
| CN110970513A (en) * | 2018-09-29 | 2020-04-07 | 中国科学院半导体研究所 | MSM type porous oxidation grafting solar blind detector and manufacturing method thereof |
| CN111381077A (en) * | 2020-03-02 | 2020-07-07 | 五邑大学 | Method for manufacturing film body electrode and film |
| CN112945377A (en) * | 2021-02-01 | 2021-06-11 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
| CN113410317A (en) * | 2021-06-22 | 2021-09-17 | 电子科技大学 | Two-dimensional material heterojunction photoelectric detector with surface plasmons and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996008837A1 (en) * | 1994-09-14 | 1996-03-21 | Brück, Alexandra | Uv tube |
| CN101692469A (en) * | 2009-10-15 | 2010-04-07 | 上海交通大学 | Method for plasma reinforcement in solar cell |
-
2016
- 2016-03-13 CN CN201610143068.4A patent/CN105552160A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996008837A1 (en) * | 1994-09-14 | 1996-03-21 | Brück, Alexandra | Uv tube |
| CN101692469A (en) * | 2009-10-15 | 2010-04-07 | 上海交通大学 | Method for plasma reinforcement in solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 刘浩等: "氧化镓薄膜的制备及其日盲紫外探测性能研究", 《发光学报》 * |
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| CN106024971A (en) * | 2016-05-28 | 2016-10-12 | 复旦大学 | Single selenium micron tube photoelectric detector, and preparation method and responsivity reinforcement method therefor |
| WO2018103647A1 (en) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Method for fabricating ultraviolet photodetector based on ga2o3 material |
| CN106711270A (en) * | 2017-01-09 | 2017-05-24 | 福建农林大学 | Flexible gallium oxide-based solar-blind ultraviolet photoelectric detector and preparation method thereof |
| CN107393253A (en) * | 2017-07-30 | 2017-11-24 | 王旭兰 | Long distance electric fire hazard monitoring system based on hetero-junction thin-film and preparation method thereof |
| CN107393253B (en) * | 2017-07-30 | 2020-01-03 | 王旭兰 | Remote electrical fire monitoring system based on heterojunction film and preparation method thereof |
| CN109713058A (en) * | 2017-10-25 | 2019-05-03 | 中国科学院物理研究所 | The gallium oxide ultraviolet detector and its preparation method and application of surface phasmon enhancing |
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| CN110970513B (en) * | 2018-09-29 | 2021-03-30 | 中国科学院半导体研究所 | MSM type porous gallium oxide solar blind detector and manufacturing method thereof |
| CN110970513A (en) * | 2018-09-29 | 2020-04-07 | 中国科学院半导体研究所 | MSM type porous oxidation grafting solar blind detector and manufacturing method thereof |
| CN109755333A (en) * | 2019-01-10 | 2019-05-14 | 北京交通大学 | A kind of photodetector based on graphene |
| CN109647389A (en) * | 2019-01-21 | 2019-04-19 | 北京工业大学 | Utilize Au nano-particle reinforcement Ga2O3The method of film photocatalysis degradation organic contaminant |
| CN110085661A (en) * | 2019-04-23 | 2019-08-02 | 中山大学 | A kind of gallium oxide semiconductor laminated structure and preparation method thereof |
| WO2020215445A1 (en) * | 2019-04-23 | 2020-10-29 | 中山大学 | Gallium oxide semiconductor laminated structure and preparation method therefor |
| CN111381077A (en) * | 2020-03-02 | 2020-07-07 | 五邑大学 | Method for manufacturing film body electrode and film |
| CN112945377A (en) * | 2021-02-01 | 2021-06-11 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
| CN112945377B (en) * | 2021-02-01 | 2022-08-30 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
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