CN112652722B - Self-powered dual-function photoelectric detector and preparation method thereof - Google Patents

Self-powered dual-function photoelectric detector and preparation method thereof Download PDF

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CN112652722B
CN112652722B CN202011603474.7A CN202011603474A CN112652722B CN 112652722 B CN112652722 B CN 112652722B CN 202011603474 A CN202011603474 A CN 202011603474A CN 112652722 B CN112652722 B CN 112652722B
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sapphire substrate
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CN112652722A (en
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李林
闫珺
公维强
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Harbin Normal University
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Abstract

The application discloses a self-powered bifunctional photoelectric detector and a preparation method thereof, wherein the self-powered bifunctional photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film covers the upper end of the electrode layer. The preparation method of the self-powered bifunctional photoelectric detector comprises the following steps of: cutting, cleaning and drying the high-light-transmittance sapphire in sequence to obtain a sapphire substrate; electrode layer preparation: an electrode layer is arranged on the sapphire substrate through photoetching and vapor deposition treatment; perovskite precursor solution preparation: preparing a perovskite precursor material into a perovskite precursor solution; the preparation of the photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.

Description

Self-powered dual-function photoelectric detector and preparation method thereof
Technical Field
The application relates to the technical fields of materials, photoelectric detectors and the like, in particular to a self-powered double-function photoelectric detector and a preparation method thereof.
Background
Photodetectors have the ability to convert light into electrical signals, which is widely used in image sensing, optical communications and environmental monitoringIs used. In recent years, perovskite materials have received increasing attention due to the simple and easy preparation method thereof, wherein organic-inorganic hybrid perovskite MAPbX 3 (MA＝CH 3 NH 3 + ，X＝Cl - ，Br - ，I - ) The advantages of small exciton binding energy, high absorption coefficient, wide spectrum range, large carrier mobility and the like become the optimal photoelectric detector material. In addition, MAPbX can be prepared by adjusting the composition of halogen element in the compound 3 Is continuously tuned from Ultraviolet (UV) to Near Infrared (NIR). The absorption edge being continuous and tunable is the most important attribute of the tunable photodetector. Photodetectors are generally classified into two types, a broad spectrum photodetector and a narrow spectrum photodetector, respectively, and one type of detector can be adapted for only one detection mode. Broad spectrum detection is used to detect broad spectrum light, such as visible light, ultraviolet light, X-rays, etc., while narrow spectrum detection is used to detect only a narrow range of light, such as red, green, blue, or infrared, etc., selective portions. Typically, to achieve narrow spectrum detection, an assembly of filters is required to be incorporated into the detector, but filters are expensive and fragile and are not suitable for use in extreme detection conditions. Also, the detector typically requires the use of an external power source to operate, so from an application perspective we have focused on constructing a self-powered perovskite photodetector that does not require an additional power source. Photodetectors operating without any power source, i.e. self-powered photodetectors, have some particular advantages, such as saving energy, reducing the size of the device and proper use under extreme conditions. Therefore, how to implement self-powered tunable perovskite photodetectors has become an important point of research in the present technology. It has been studied that self-powered photodetectors are typically implemented using p-n junction, p-i-n junction, schottky junction, and heterojunction structures that are effective in separating photogenerated carriers, but the fabrication process of these structures is complex. Most photodetectors operate based on metal-semiconductor-metal (MSM) structures, which have the advantage of being controllable, stable, and easy to manufacture. However, the conventional MSM photodetector always requires an external power source as a driving force to separate the photo-generated current carriersThe electrons in turn generate photocurrent because of the same height of their two symmetric schottky contact barriers. From previous studies, it was shown that MSM devices using different materials as electrodes (one being ohmic contact and the other being schottky contact) are considered planar structures that can operate without external bias. However, the fabrication process for fabricating a MSM structured photodetector from two different electrode materials is complex and is not the most advantageous electrode structure. Experiments have found that the size of the metal electrode can strongly influence the distribution of the electric field in the schottky junction, and that the preparation of metal electrodes of different sizes is simpler and easier than the preparation of metal electrodes of different materials. For the photoelectric detector, the built-in electric field can effectively prevent the recombination of photo-generated electron-hole pairs, effectively separate photo-generated carriers, further convert the acquired optical signals into electric signals and extract the electric signals, and realize the behavior of optical signal detection. It is therefore desirable to implement a self-powered perovskite MSM dual-function photodetector by using an asymmetric planar electrode pair. Through the research background, the application mainly solves the following problems: 1. the detection mode applicable to a wide spectrum and a narrow spectrum on the same photoelectric detector is realized. 2. The problem that the detector can work without being connected with an external voltage is solved.
Disclosure of Invention
Aiming at the defects in the prior art, the application provides the self-powered double-function photoelectric detector and the preparation method thereof, which realize the detection mode applicable to wide spectrum and narrow spectrum on the same photoelectric detector and solve the problem that the detector can work without being connected with an external voltage.
The self-powered bifunctional photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, wherein the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film covers the upper end of the electrode layer.
The preparation method of the self-powered bifunctional photoelectric detector is used for preparing the self-powered bifunctional photoelectric detector and comprises the following steps of: cutting, cleaning and drying the high-light-transmittance sapphire in sequence to obtain a sapphire substrate; electrode layer preparation: an electrode layer is arranged on the sapphire substrate through photoetching and vapor deposition treatment; perovskite precursor solution preparation: preparing a perovskite precursor material into a perovskite precursor solution; the preparation of the photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
Further, the specific preparation method of the sapphire substrate comprises the following steps:
s1, firstly cutting high-light-transmittance sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning in an ultrasonic bath for 15min;
s3, drying the cleaned sapphire substrate with high-purity nitrogen for later use.
Further, the electrode layer is an asymmetric electrode, and the specific preparation method of the asymmetric electrode comprises the following steps:
s4, spin-coating a layer of ultraviolet photoresist on the sapphire substrate after blow-drying, placing the sapphire substrate on a 100-DEG hot plate for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist; the spin coating parameters of the ultraviolet photoresist comprise: 1. 500rpm, 5s,2, 3000rpm, 30s.
S5, transferring a photoetching plate pattern with 12 pairs of asymmetric interdigital electrodes to the sapphire substrate which is spin-coated with ultraviolet photoresist after ultraviolet light exposure through photoetching, wherein the finger widths of the asymmetric interdigital electrodes are respectively 10 mu m and 5 mu m, the track width is 10 mu m, and the length is 500 mu m;
s6, developing the exposed sapphire substrate in a developing solution for 6 seconds through a wet stripping technology, obtaining an electrode pattern, flushing with deionized water to remove residual developing solution, and drying the deionized water on the surface through high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
and S7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating an Au electrode with the thickness of 50nm, and placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning to obtain the sapphire substrate with the electrode layer.
Furthermore, the application synthesizes perovskite materials with different absorption band gaps, which are MAPbI respectively 3 、MAPbBr 3 、MAPbCl 3 Three substances, the absorption edges are respectively positioned at 810nm, 550nm and 410nm, the synthesis of the tunable light absorbing material is realized, and the perovskite precursor solution comprises the following components: MAPbI 3 、MAPbBr 3 、MAPbCl 3 The specific synthesis method is as follows:
optionally, the MAPbI 3 The specific preparation method of (2): weighing MAI and PbI with the molar ratio of 1:1 2 The powder was mixed and dissolved in 5ml of gamma-butyrolactone solution, and a perovskite precursor solution having a synthetic concentration of 0.5M was prepared.
Optionally, the MAPbBr 3 The specific preparation method of (2): weighing MABr and PbBr with the molar ratio of 1:1 2 The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution.
Optionally, the MAPbCl 3 The specific preparation method of (2): MACl and PbCl with the molar ratio of 1:1 are weighed 2 The powder is dissolved in a mixed solution of dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1 after being mixed, and a perovskite precursor solution is prepared and synthesized.
Further, the specific preparation method of the perovskite precursor solution comprises the following steps:
s8, completing synthesis of the mixed solution in a glove box, and placing the mixed solution on a magnetic stirrer and stirring at 800rpm at the ambient temperature of 60 ℃ overnight until the solution is completely dissolved.
Further, the specific preparation method for preparing the photoelectric detector comprises the following steps:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, mixing with 5ml of o-dichlorobenzene, stirring at 400rpm for 30min in an environment with the temperature of 110 ℃ through magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
The beneficial effects of the application are as follows:
the self-powered double-function photoelectric detector and the preparation method thereof are simple and feasible, have no strict requirements on the preparation environment and have stable devices. The application integrates self-power supply and dual-function detection, and prepares the tunable perovskite photoelectric detector. The photoelectric detector designed by the application has the advantages of quick response time, quick response to light and capability of detecting light signals with quick change.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of the device structure of a self-powered dual-function photodetector of the present application;
FIG. 2 is a view of a scanning electron microscope of the surface of a perovskite microcrystalline film of three perovskite materials according to an embodiment of the application, and the inset is a cross-sectional view of the material;
FIG. 3 is an X-ray diffraction pattern (XRD) of three perovskite materials of a self-powered bifunctional photodetector in an embodiment of the application;
FIG. 4 is an absorption graph of three perovskite materials of a self-powered dual function photodetector according to an embodiment of the application;
FIG. 5 is a graph of spectral responsivity of three perovskite materials of a self-powered dual-function photodetector according to an embodiment of the application;
FIG. 6 shows the selection of MAPbI in an embodiment of the application 3 An input signal waveform diagram of a device optical communication test of the material;
FIG. 7 is a waveform diagram of an output signal with a wavelength of 808nm for a test light source according to an embodiment of the present application, wherein the upper diagram is a broad spectrum detection mode, and the lower diagram is a narrow spectrum detection mode;
FIG. 8 is a waveform diagram of an output signal with a wavelength of 550nm for a test light source according to an embodiment of the present application, wherein the upper diagram is a broad spectrum detection mode and the lower diagram is a narrow spectrum detection mode.
Detailed Description
Embodiments of the technical scheme of the present application will be described in detail below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present application, and thus are merely examples, and are not intended to limit the scope of the present application.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs.
Example 1
As shown in fig. 1, the self-powered bifunctional photoelectric detector comprises a perovskite microcrystalline film, an electrode layer and a sapphire substrate, wherein the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite microcrystalline film covers the upper end of the electrode layer.
The preparation method of the self-powered bifunctional photoelectric detector is used for preparing the self-powered bifunctional photoelectric detector and comprises the following steps of: cutting, cleaning and drying the high-light-transmittance sapphire in sequence to obtain a sapphire substrate; electrode layer preparation: an electrode layer is arranged on the sapphire substrate through photoetching and vapor deposition treatment; perovskite precursor solution preparation: preparing a perovskite precursor material into a perovskite precursor solution; the preparation of the photoelectric detector: and placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, and generating a perovskite microcrystalline film on the electrode layer to obtain the photoelectric detector with the perovskite microcrystalline film.
In this embodiment, the specific preparation method of the sapphire substrate is as follows:
s1, firstly cutting high-light-transmittance sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning in an ultrasonic bath for 15min;
s3, drying the cleaned sapphire substrate with high-purity nitrogen for later use.
As shown in fig. 1, in this embodiment, the electrode layer is an asymmetric electrode, and the specific preparation method of the asymmetric electrode is as follows:
s4, spin-coating a layer of ultraviolet photoresist on the sapphire substrate after blow-drying, placing the sapphire substrate on a 100-DEG hot plate for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist; the spin coating parameters of the ultraviolet photoresist comprise: 1. 500rpm, 5s,2, 3000rpm, 30s.
S5, transferring a photoetching plate pattern with 12 pairs of asymmetric interdigital electrodes to the sapphire substrate which is spin-coated with ultraviolet photoresist after ultraviolet light exposure through photoetching, wherein the finger widths of the asymmetric interdigital electrodes are respectively 10 mu m and 5 mu m, the track width is 10 mu m, and the length is 500 mu m;
s6, developing the exposed sapphire substrate in a developing solution for 6 seconds through a wet stripping technology, obtaining an electrode pattern, flushing with deionized water to remove residual developing solution, and drying the deionized water on the surface through high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
and S7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating an Au electrode with the thickness of 50nm, and placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning to obtain the sapphire substrate with the electrode layer.
In this example, the application synthesizes perovskite materials with different absorption band gaps, respectively MAPbI 3 、MAPbBr 3 、MAPbCl 3 Three substances, the absorption edges are respectively positioned at 810nm, 550nm and 410nm, the synthesis of the tunable light absorbing material is realized, and the perovskite precursor solution comprises the following components: MAPbI 3 、MAPbBr 3 、MAPbCl 3 The specific synthesis method is as follows:
in the present embodiment, the MAPbI 3 The specific preparation method of (2): weighing MAI and PbI with the molar ratio of 1:1 2 The powder was mixed and dissolved in 5ml of gamma-butyrolactone solution, and a perovskite precursor solution having a synthetic concentration of 0.5M was prepared.
In this embodiment, the MAPbBr 3 The specific preparation method of (2): weighing MABr and PbBr with the molar ratio of 1:1 2 The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution.
In the present embodiment, the MAPbCl 3 The specific preparation method of (2): MACl and PbCl with the molar ratio of 1:1 are weighed 2 The powder is dissolved in a mixed solution of dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1 after being mixed, and a perovskite precursor solution is prepared and synthesized.
In this embodiment, the specific preparation method of the perovskite precursor solution is as follows:
s8, completing synthesis of the mixed solution in a glove box, and placing the mixed solution on a magnetic stirrer and stirring at 800rpm at the ambient temperature of 60 ℃ overnight until the solution is completely dissolved.
In this embodiment, the specific preparation method for preparing the photodetector includes:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, mixing with 5ml of o-dichlorobenzene, stirring at 400rpm for 30min in an environment with the temperature of 110 ℃ through magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
Example 2
In order to further characterize the surface morphology and performance of the self-powered dual-function tunable detector (self-powered dual-function photoelectric detector) prepared by the application, the photoelectric detector with the dual-function self-powered adjustable plane asymmetric MSM structure is tested and analyzed in the following series, and the specific contents are as follows:
as shown in fig. 2, the surface scanning electron microscope pictures of the three materials are inserted into the material cross-section. From the pictures it is evident that the perovskite microcrystalline film was successfully synthesized by the experimental method of the application.
As shown in fig. 3, X-ray diffraction patterns (XRD) of the three materials. XRD is the most intuitive means for synthesizing the quality of the reaction material, and diffraction peaks reflected by the curves are highly matched with crystal faces, so that the perovskite material prepared by the method has high synthesizing quality.
As shown in fig. 4, the absorption curves of three perovskite materials, the preparation of tunable light-absorbing perovskite materials, is one of the research objectives of the present application. From the absorption curve, a clear difference in the light absorption positions of the three perovskite materials can be intuitively observed. Thereby providing a powerful basis for implementing the application.
As shown in fig. 5, the spectral responsivity curves of the three perovskite material detectors. The spectral response is an important parameter of the detector and is indicative of the intensity of the light that the detector is capable of detecting. As can be seen from the test curve, the detector prepared by the application successfully realizes detection of different light wavelengths, and realizes preparation of a tunable detector. In addition, there is a large difference in spectral response curves of the same material, and there is a large difference in wavelength of the detection light. A very distinct broad spectrum detection mode and a narrow spectrum detection mode can be observed because the microcrystalline film prepared has a certain thickness and the shorter the wavelength of light, the shallower the penetration depth within the film, the more difficult the generated carrier signal is to collect, so that a narrow spectrum detection situation occurs when light is irradiated from above the device, and conversely a broad spectrum detection situation occurs when light is incident from below the device. The application realizes that two different detection modes are provided on the same detector in a true sense. Notably, all spectral response tests were performed without any external power supply, demonstrating the possibilities of the present application.
Example 3
To demonstrate the practical applicability of the photodetectors designed in the present application, MAPbI was chosen 3 The device was tested for optical communication. Five letters of HRBNU are used as input signals for testing, and the letters are required to be converted into binary codes before testing. Under the condition of no external bias voltage, when the light with the wavelength of 808nm is used for testing, the waveform curve of the input signal is consistent with that of the output signal under the condition of two detection modes; when tested using light of 550nm wavelength, it was found that the output curve waveform and the output curve waveform when tested using broad spectrum modeThe input waveforms are highly matched and no fluctuations in the output curve are found when tested using the narrow spectral mode. The reason for this is that light with a wavelength of 550nm cannot be detected in the narrow spectrum detection mode. From another perspective, it is explained that the device of the present experimental design has a dual function detection mode, the effect of which is shown in fig. 6-8 below. The detector designed by the application can be used for practical application. Fig. 6 is a waveform diagram of an input signal, fig. 7 is a waveform diagram of an output signal with a wavelength of 808nm for a test light source in an embodiment of the present application, wherein an upper graph is a broad spectrum detection mode, a lower graph is a narrow spectrum detection mode, and fig. 8 is a waveform diagram of an output signal with a wavelength of 550nm for a test light source in an embodiment of the present application, wherein an upper graph is a broad spectrum detection mode, and a lower graph is a narrow spectrum detection mode.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application, and are intended to be included within the scope of the appended claims and description.

Claims (3)

1. Self-powered dual-function photoelectric detector, its characterized in that: the perovskite micro-crystal display device comprises a perovskite micro-crystal film, an electrode layer and a sapphire substrate, wherein the electrode layer is arranged at the upper end of the sapphire substrate, and the perovskite micro-crystal film covers the upper end of the electrode layer;
preparing a sapphire substrate: cutting, cleaning and drying the high-light-transmittance sapphire in sequence to obtain a sapphire substrate;
electrode layer preparation: an electrode layer is arranged on the sapphire substrate through photoetching and vapor deposition treatment;
perovskite precursor solution preparation: preparing a perovskite precursor material into a perovskite precursor solution;
the preparation of the photoelectric detector: placing a sapphire substrate with an electrode layer and a perovskite precursor solution in a crystallization dish together, and generating a perovskite microcrystalline film on the electrode layer to obtain a photoelectric detector with the perovskite microcrystalline film;
the perovskite precursor solution includes: MAPbI 3 、MAPbBr 3 、MAPbCl 3 ；
The specific preparation method of the sapphire substrate comprises the following steps:
s1, firstly cutting high-light-transmittance sapphire into a sapphire substrate with the thickness of 1.5cm multiplied by 1.5 cm;
s2, sequentially placing the sapphire substrate in a beaker filled with acetone, alcohol and deionized water, and respectively cleaning in an ultrasonic bath for 15min;
s3, drying the cleaned sapphire substrate with high-purity nitrogen for later use;
the electrode layer is an asymmetric electrode, and the specific preparation method comprises the following steps:
s4, spin-coating a layer of ultraviolet photoresist on the sapphire substrate after blow-drying, placing the sapphire substrate on a hot plate at 100 ℃ for annealing for 1min, and removing an organic solvent in the ultraviolet photoresist;
s5, transferring a photoetching plate pattern with 12 pairs of asymmetric interdigital electrodes to the sapphire substrate which is spin-coated with ultraviolet photoresist after ultraviolet light exposure through photoetching, wherein the finger widths of the asymmetric interdigital electrodes are respectively 10 mu m and 5 mu m, the track width is 10 mu m, and the length is 500 mu m;
s6, developing the exposed sapphire substrate in a developing solution for 6 seconds through a wet stripping technology, obtaining an electrode pattern, flushing with deionized water to remove residual developing solution, and drying the deionized water on the surface through high-purity nitrogen to obtain the sapphire substrate with the electrode pattern;
s7, placing the sapphire substrate with the electrode pattern in an ion sputtering instrument, evaporating an Au electrode with the thickness of 50nm, placing the evaporated sapphire substrate in a beaker filled with acetone for cleaning, and obtaining the sapphire substrate with an electrode layer;
the MAPbI 3 The specific preparation method of (2): weighing MAI and PbI with the molar ratio of 1:1 2 The powder is dissolved in 5ml gamma-butyrolactone solution after mixing, and perovskite precursor solution with the synthetic concentration of 0.5M is prepared;
the MAPbBr 3 The specific preparation method of (2): weighing MABr and PbBr with the molar ratio of 1:1 2 The powder is dissolved in dimethylformamide after being mixed, and is prepared and synthesized into perovskite precursor solution;
the MAPbCl 3 The specific preparation method of (2): MACl and PbCl with the molar ratio of 1:1 are weighed 2 The powder is dissolved in a mixed solution of dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1 after being mixed, and a perovskite precursor solution is prepared and synthesized.
2. The self-powered bifunctional photodetector of claim 1, wherein the perovskite precursor solution is prepared by a specific method comprising:
s8, completing synthesis of the mixed solution in a glove box, and placing the mixed solution on a magnetic stirrer and stirring at 800rpm at the ambient temperature of 60 ℃ overnight until the solution is completely dissolved.
3. The self-powered bifunctional photodetector of claim 1, wherein the specific preparation method of the photodetector comprises:
s9, placing the sapphire substrate with the electrode layer and the perovskite precursor solution in a crystallization dish, mixing with 5ml of o-dichlorobenzene, stirring at 400rpm for 30min in an environment with the temperature of 110 ℃ through magnetic stirring, taking out the sapphire substrate, placing the sapphire substrate on a hot plate, and annealing for 5min in an environment with the temperature of 150 ℃ to obtain the photoelectric detector with the perovskite microcrystalline film.
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CN114447153B (en) * 2022-01-25 2024-05-07 哈尔滨师范大学 CsPbBr3ZnO QDs-based MSM structure detector, preparation method and application
CN116744754A (en) * 2023-06-16 2023-09-12 深圳大学 Perovskite polymer fiber film photoelectric device and preparation method thereof
CN117460269B (en) * 2023-12-25 2024-03-19 苏州大学 Bipolar photoelectric detector and optical encryption communication system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140087252A (en) * 2012-12-28 2014-07-09 (재)한국나노기술원 Electro Plating Method for Grid Electrode of Sollar Cell
CN109244173A (en) * 2018-08-09 2019-01-18 西安电子科技大学 A kind of self-powered Two stage ultraviolet electric explorer part and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140087252A (en) * 2012-12-28 2014-07-09 (재)한국나노기술원 Electro Plating Method for Grid Electrode of Sollar Cell
CN109244173A (en) * 2018-08-09 2019-01-18 西安电子科技大学 A kind of self-powered Two stage ultraviolet electric explorer part and preparation method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
《Fast Photoconductive Responses in Organometal Halide Perovskite Photodetectors》;Fei Wang等;《ACS APPLIED MATERIALS & INTERFACES》;American Chemical Society;20160112;第8卷(第4期);正文1-15页，附图1-6 *
《Novel BeZnO Based Self-Powered Dual-Color UV Photodetector Realized via a One-Step Fabrication Method》;Su,LX等;《LASER & PHOTONICS REVIEWS》;Wiley Online Library;20171013;第11卷(第6期);全文 *
《Realization of self-powered ZnO MSM UV photodetector with high responsivity using asymmetric pair of Au electrodes》;Chen,HY等;《JOURNAL OF MATERIALS CHEMISTRY C》;Royal Society of Chemistry;20141001;第2卷(第45期);正文第1-5页，附图1-6 *
《Realization of unbiased photoresponse in amorphous InGaZnO ultraviolet detector via a hole-trapping process》;D.L.Jiang等;《APPLIED PHYSICS LETTERS》;APPLIED PHYSICS LETTERS;20150427;第106卷(第17期);全文 *

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