CN108682720A - A kind of GaN base LED epitaxial structure and preparation method thereof - Google Patents
A kind of GaN base LED epitaxial structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of GaN base LED epitaxial structure and preparation method thereof, GaN base LED epitaxial structure, including Si substrates；Sequentially grown up on the Si substrates AlN layers, AlGaN layer, the first N-type GaN layer, the second N-type GaN layer, InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer；The second N-type GaN layer includes Si doped gan layer and the GaN layer that undopes；Preparation method includes：First growth step：AlN layers, AlGaN layer and the first N-type GaN layer are sequentially grown up on a si substrate；Second growth step：Si doped gan layer and the GaN layer interval growth that undopes；Third growth step：InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer are grown, GaN base LED epitaxial structure is obtained；The structure increases the electron concentration in Quantum Well, promotes the photoelectric properties of LED.
Description
Technical field
The present invention relates to a kind of GaN base LED epitaxial structures and preparation method thereof, belong to technical field of semiconductors.
Background technology
With the progress of light emitting diode (LED) manufacturing technology, growth GaN material becomes a reality in big mismatch substrate.
Under this technical background, the sapphire and SiC that replace current commercialization LED generally to use with cheap, large-sized Si substrates serve as a contrast
Bottom can effectively reduce the manufacturing cost of LED, have great market competition advantage.However, due to Si substrates and GaN material
There are prodigious lattice mismatch and thermal mismatching, the GaN material crystal quality grown on a si substrate is poor, this makes Si serve as a contrast
LED on bottom is difficult to match sapphire and LED epitaxial structure complicated in SiC substrate.It is mainly reflected in following two aspect：The
GaN epitaxy material on one, Si substrate it is second-rate, in order to keep because be more than do not generated due to relaxation occurs for critical thickness it is excessive
Crystal defect, rear section structure must be strictly controlled thickness and component；Second, GaN material itself is second-rate, causes it cannot
The concentration of Quantum Well carriers is improved by heavy doping.These two aspects is set to the blue-ray LED epitaxial structure on Si substrates
Meter brings difficulty, limits the further promotion of its performance.
Invention content
For overcome the deficiencies in the prior art, of the invention first is designed to provide a kind of GaN base LED epitaxy junctions
Structure under the premise of the structure keeps quality, increases the electron concentration in Quantum Well, promotes the photoelectric properties of LED.
Second object of the present invention is to provide a kind of preparation method of above-mentioned GaN base LED epitaxial structure.
Realize that first purpose of the present invention can reach by adopting the following technical scheme that：A kind of GaN base LED epitaxy junctions
Structure, including Si substrates；Sequentially grown up on the Si substrates AlN layers, AlGaN layer, the first N-type GaN layer, the second N-type GaN
Layer, InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer；
The second N-type GaN layer includes that at least one layer Si doped gan layer and at least one layer undope GaN layer；The Si mixes
Miscellaneous GaN layer and the GaN layer interval overlapping setting that undopes；The Si doping concentrations of the Si doped gan layer are 1 × 1019-1×
1020cm-3。
Further, AlN layers of the thickness is 90-110nm.
Further, the thickness of the AlGaN layer is 250-450nm.
Further, the thickness of the first N-type GaN layer is 2-4 μm, and doped with Si, doping concentration is 1 × 1017-1
×1020cm-3。
Further, the thickness of the Si doping GaN is 1-200nm；The thickness of the GaN layer that undopes is 1-200nm.
Further, the InGaN/GaN multiple quantum well layers include the InGaN well layer and GaN barrier layer of interval overlapping setting；
The thickness of the InGaN well layer is 2-4nm；The thickness of the GaN barrier layer is 10-15nm.
Further, the period of the InGaN/GaN multiple quantum well layers is 3-12.
Further, the thickness of the electronic barrier layer is 20-50nm, and doped with Mg, doping concentration is 1 × 1017-1
×1020cm-3。
Further, the thickness of the p-type GaN layer is 150-300nm, and doping concentration is 1 × 1017-1×1020cm-3。
Realize that second object of the present invention can reach by adopting the following technical scheme that：A kind of GaN as described above
The preparation method of base LED epitaxial structure, including：
First growth step：AlN layers, AlGaN layer and the first N-type GaN layer are sequentially grown up on a si substrate；
Second growth step：It is passed through silane, ammonia, nitrogen and trimethyl gallium, grows Si doped gan layer；It is passed through ammonia, hydrogen
Gas, nitrogen and trimethyl gallium grow the GaN layer that undopes, Si doped gan layer and the GaN layer interval growth that undopes；
Third growth step：InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer are grown, GaN base is obtained
LED epitaxial structure.
Further, in the first growth step, the growth conditions of the first N-type GaN layer is 900-1100 DEG C of temperature, air pressure
200Torr。
Conventional growth technique method includes but not limited to MOCVD (metal-organic chemical vapor deposition equipment).
The formulation Design Principle of the present invention is as follows：
AlGaN layer has the effect of two aspects：On the one hand, AlGaN layer is mixed with Al components, therefore can be to be grown in
The internal stress that the first N-type GaN layer on it provides compression makes to compensate the thermal stress of the stretching introduced in temperature-fall period
Epitaxial film will not crack；On the other hand, it can reduce as the AlN layers of transition to succeeding layer due to mixing Al groups
Divide the deterioration of crystal quality caused by the lattice mismatch generated.
The effect of first N-type GaN layer is to provide electronics for radiation recombination for LED active areas, and the second N-type GaN layer
It can not then drawn by way of interruption Si doped gan layer (adulterating Si) and the GaN layer that undopes (undope Si)
It rises under the premise of crystal quality deteriorates and promotes doping concentration.
Compared with prior art, the beneficial effects of the present invention are：
The doping that GaN base LED epitaxial structure of the present invention improves Si in a manner of the interruption doping Si of the second N-type GaN layer is dense
Degree is conducive to the injection for improving the sub- trap of electron vectors, the electron concentration in Quantum Well is made to be maintained at higher level, is conducive to improve
Luminous intensity；In the case where primer is heavily doped, the crystal quality of Quantum Well does not deteriorate simultaneously, avoids caused by crystal defect
Luminous intensity loss, promote the photoelectric properties of LED.
Description of the drawings
Fig. 1 is the structural schematic diagram of specific implementation mode；
Fig. 2 is embodiment optical output power curve graph；
In figure, 1, Si substrates；2, AlN layers；3, AlGaN layer；4, the first N-type GaN layer；5, the second N-type GaN layer；51, Si mixes
Miscellaneous GaN layer；52, undope GaN layer；6, InGaN/GaN multiple quantum well layers；61, In0.15Ga0.85N well layer；62, GaN barrier layer；
7, electronic barrier layer；8, p-type GaN layer.
Specific implementation mode
In the following, in conjunction with attached drawing and specific implementation mode, the present invention is described further：
As shown in Figure 1, a kind of GaN base LED epitaxial structure, including Si substrates 1；AlN has sequentially been grown up on Si substrates 1
Layer 2, AlGaN layer 3, the first N-type GaN layer 4, the second N-type GaN layer 5, InGaN/GaN multiple quantum well layers 6, electronic barrier layer 7 and P
Type GaN layer 8；
Second N-type GaN layer 5 includes that at least one layer Si doped gan layer 51 and at least one layer undope GaN layer 52；Si is adulterated
GaN layer 51 and the interval of the GaN layer 52 overlapping setting that undopes；The thickness of Si doped gan layer 51 is 1-200nm；Si doped gan layer 51
Si doping concentrations be 1 × 1019-1×1020cm-3；The thickness of the GaN layer that undopes 52 is 1-200nm.
The thickness of AlN layers 2 is 90-110nm；
Al0.7Ga0.3N layers be used as AlGaN layer 3, thickness be 250-450nm；
The thickness of first N-type GaN layer 4 is 2-4 μm, and doped with Si, doping concentration is 1 × 1017-1×1020cm-3；
InGaN/GaN multiple quantum well layers 6 include the In of interval overlapping setting0.15Ga0.85N well layer 61 and GaN barrier layer 62；
In0.15Ga0.85The thickness of N well layer 6 is 2-4nm；The thickness of GaN barrier layer 62 is 10-15nm；InGaN/GaN multiple quantum well layers 6
Period is 3-12；
Al0.15Ga0.85N electronic barrier layers are as electronic barrier layer 7, thickness 20-50nm, doped with Mg, doping concentration
It is 1 × 1017-1×1020cm-3；
The thickness of p-type GaN layer 8 is 150-300nm, and doping concentration is 1 × 1017-1×1020cm-3；
GaN base LED epitaxial structure is prepared by the following method to obtain：
First growth step：AlN layers, Al are sequentially grown up on a si substrate0.7Ga0.3N layers and the first N-type GaN layer；The
The growth conditions of one N-type GaN layer is 900-1100 DEG C of temperature, air pressure 200Torr；
Second growth step：It is passed through silane, ammonia, nitrogen and trimethyl gallium, grows Si doped gan layer；It is passed through ammonia, hydrogen
Gas, nitrogen and trimethyl gallium grow the GaN layer that undopes, Si doped gan layer and the GaN layer interval growth that undopes；
The second growth step is repeated, the second N-type GaN layer in more than one period can be grown；
Third growth step：Interval growth In0.15Ga0.85N well layer and GaN barrier layer；Repeat In0.15Ga0.85N well layer and GaN
The growth step of barrier layer 3-12 times obtains the InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer in 3-12 periods,
Obtain GaN base LED epitaxial structure.
Embodiment：
A kind of GaN base LED epitaxial structure, including Si substrates；AlN layers, Al have sequentially been grown up on Si substrates0.7Ga0.3N
Layer, the first N-type GaN layer, the second N-type GaN layer, InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer；
The period of second N-type GaN layer is 10, including 10 layers of Si doped gan layer and the 10 layers of GaN layer that undopes；Si adulterates GaN
Layer and the GaN layer interval overlapping setting that undopes；The thickness of Si doped gan layer is 3nm；The Si doping concentrations of Si doped gan layer are 5
×1019cm-3；The thickness for the GaN layer that undopes is 1nm.
AlN layers of thickness is 100nm；
Al0.7Ga0.3N layers of thickness is 300nm；
The thickness of first N-type GaN layer is 2.5 μm, and doped with Si, doping concentration is 5 × 1018cm-3；
InGaN/GaN multiple quantum well layers include the In of interval overlapping setting0.15Ga0.85N well layer and GaN barrier layer；
In0.15Ga0.85The thickness of N well layer is 3nm；The thickness of GaN barrier layer is 12nm；The period of InGaN/GaN multiple quantum well layers is 5；
Al0.15Ga0.85The thickness of N electronic barrier layers is 30nm, and doped with Mg, doping concentration is 5 × 1017cm-3；
The thickness of p-type GaN layer is 200nm, and doping concentration is 5 × 1017cm-3。
GaN base LED epitaxial structure is prepared by the following method to obtain：
Cleaning step：Single crystal Si substrate is put into 15% hydrofluoric acid solution of percentage by volume and is cleaned by ultrasonic 5 seconds, then is spent
Ionized water is cleaned by ultrasonic, finally spare with high-purity drying nitrogen drying substrate；
First growth step：With MOCVD techniques, 1000 DEG C of temperature, is passed through ammonia, hydrogen and trimethyl at air pressure 50Torr
Aluminium, on a si substrate growing AIN layer；
1000 DEG C of temperature, air pressure 50Torr, it is passed through ammonia, hydrogen, trimethyl aluminium and trimethyl gallium, grows Al0.7Ga0.3N
Layer；
1000 DEG C of temperature, air pressure 200Torr, silane, ammonia, nitrogen gas and trimethyl gallium, one N-type GaN of growth regulation are passed through
Layer；
Second growth step：With MOCVD techniques, 1000 DEG C of temperature, air pressure 200Torr, be passed through silane, ammonia, nitrogen and
Trimethyl gallium grows Si doped gan layer, is passed through ammonia, hydrogen, nitrogen and trimethyl gallium, grows the GaN layer that undopes, Si doping
GaN layer and the GaN layer interval growth that undopes；
It repeats the second growth step 9 times, the second N-type GaN layer in 10 periods can be grown；
Third growth step：With MOCVD techniques, 810 DEG C of temperature, is passed through ammonia, nitrogen and trimethyl at air pressure 200Torr
Gallium, interval growth In0.15Ga0.85N well layer and GaN barrier layer；Repeat In0.15Ga0.85The growth step of N well layer and GaN barrier layer 4 times,
Obtain the InGaN/GaN multiple quantum well layers in 5 periods；
Air pressure 200Torr, 950 DEG C of temperature is passed through two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl aluminium, growth
Al0.15Ga0.85N electronic barrier layers；
It is passed through two luxuriant magnesium, ammonia, nitrogen and trimethyl gallium, growth P-type GaN layer and obtains GaN base LED epitaxial structure.
The second N-type GaN layer, wherein the Si doping concentrations of Si doped gan layer is added up to 5 × 10 in the present embodiment19cm-3, can
The electron concentration in Quantum Well is significantly increased so that there are more electronics that can participate in the radiation recombination of LED, to be promoted
The luminous intensity of LED；Simultaneously as the method for using interruption doping, can effectively prevent the point caused by heavily doped from lacking
Sunken extension becomes line defect, ensures the crystal quality of Quantum Well.
The present embodiment is detected, comparative example is to be not provided with the outers the LED structure of the second N-type GaN layer.As shown in Fig. 2,
For embodiment compared with comparative example, optical output power improves 13%.
For those skilled in the art, technical solution that can be as described above and design are made other each
Kind is corresponding to be changed and deforms, and all these change and deform the protection model that should all belong to the claims in the present invention
Within enclosing.
Claims (10)
1. a kind of GaN base LED epitaxial structure, including Si substrates；It is characterized in that, sequentially having been grown up on the Si substrates
AlN layers, AlGaN layer, the first N-type GaN layer, the second N-type GaN layer, InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type
GaN layer；
The second N-type GaN layer includes that at least one layer Si doped gan layer and at least one layer undope GaN layer；The Si doping
GaN layer and the GaN layer interval overlapping setting that undopes；The Si doping concentrations of the Si doped gan layer are 1 × 1019-1×1020cm-3。
2. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the thickness of the AlGaN layer is 250-
450nm。
3. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the thickness of the first N-type GaN layer is 2-
4 μm, doped with Si, doping concentration is 1 × 1017-1×1020cm-3。
4. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the thickness of the Si doping GaN is 1-
200nm；The thickness of the GaN layer that undopes is 1-200nm.
5. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the InGaN/GaN multiple quantum well layers packet
Include the InGaN well layer and GaN barrier layer of interval overlapping setting；The thickness of the InGaN well layer is 2-4nm；The thickness of the GaN barrier layer
Degree is 10-15nm.
6. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the InGaN/GaN multiple quantum well layers
Period is 3-12.
7. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the thickness of the electronic barrier layer is 20-
50nm, doped with Mg, doping concentration is 1 × 1017-1×1020cm-3。
8. GaN base LED epitaxial structure as described in claim 1, which is characterized in that the thickness of the p-type GaN layer is 150-
300nm, doping concentration are 1 × 1017-1×1020cm-3。
9. a kind of preparation method of GaN base LED epitaxial structure as described in claim 1, which is characterized in that including：
First growth step：AlN layers, AlGaN layer and the first N-type GaN layer are sequentially grown up on a si substrate；
Second growth step：It is passed through silane, ammonia, nitrogen and trimethyl gallium, grows Si doped gan layer；Be passed through ammonia, hydrogen,
Nitrogen and trimethyl gallium grow the GaN layer that undopes, Si doped gan layer and the GaN layer interval growth that undopes；
Third growth step：InGaN/GaN multiple quantum well layers, electronic barrier layer and p-type GaN layer are grown, is obtained outside GaN base LED
Prolong structure.
10. the preparation method of GaN base LED epitaxial structure as claimed in claim 9, which is characterized in that in the first growth step,
The growth conditions of first N-type GaN layer is 900-1100 DEG C of temperature, air pressure 200Torr.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090267091A1 (en) * | 2005-09-15 | 2009-10-29 | Yoshitaka Kinoshita | Semiconductor light emitting device |
| CN103107256A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial wafer |
| CN104037287A (en) * | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | LED epitaxial wafer grown on Si substrate and preparation method thereof |
-
2018
- 2018-04-24 CN CN201810374612.5A patent/CN108682720A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090267091A1 (en) * | 2005-09-15 | 2009-10-29 | Yoshitaka Kinoshita | Semiconductor light emitting device |
| CN103107256A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial wafer |
| CN104037287A (en) * | 2014-06-10 | 2014-09-10 | 广州市众拓光电科技有限公司 | LED epitaxial wafer grown on Si substrate and preparation method thereof |
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Application publication date: 20181019 |