CN105140360B - A kind of iii-nitride light emitting devices and preparation method thereof - Google Patents
A kind of iii-nitride light emitting devices and preparation method thereof Download PDFInfo
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- CN105140360B CN105140360B CN201510549914.8A CN201510549914A CN105140360B CN 105140360 B CN105140360 B CN 105140360B CN 201510549914 A CN201510549914 A CN 201510549914A CN 105140360 B CN105140360 B CN 105140360B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 31
- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 230000000802 nitrating effect Effects 0.000 claims abstract description 8
- 238000010348 incorporation Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims description 50
- 125000004429 atom Chemical group 0.000 claims description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 7
- 230000026267 regulation of growth Effects 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 abstract description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of iii-nitride light emitting devices and preparation method thereof, comprising：Substrate, low temperature buffer layer, non-nitrating compound layer, n-type nitride layer, multiquantum well region, high hole concentration electronic barrier layer, p-type nitride layer, P type contact layer and electrode.High hole concentration electronic barrier layer lifts the incorporation efficiency of Mg in the second doped layer by being alternately passed through the method in In sources and Mg sources in the first doped layer, so as to lift the hole concentration in electronic barrier layer, reduce material resistance, reduce operating voltage, lift the photoelectric transformation efficiency of device.
Description
Technical field
The present invention relates to semiconductor photoelectric device preparation field, more particularly to iii-nitride light emitting devices and its preparation skill
Art.
Background technology
The fast development of broad stopband III-V group semi-conductor material causes high brightness LED to realize green glow to nearly purple
The commercialization of outer product.But the principal element that restriction gallium nitride based light emitting diode goes further to semiconductor lighting is high current
The problem of lower photoelectric transformation efficiency reduces, i.e. Droop problems.Multiquantum well region Carrier Leakage is to trigger Droop under high current
One of major reason of problem, Droop effects can effectively be suppressed using AlGaN layer or AlGaN superlattices electronic barrier layer.But
The rise of operating voltage is often brought using AlGaN layer or AlGaN superlattices electronic barrier layer, the reason for it is more important is
Hole concentration is low in AlGaN layer.
The content of the invention
It is an object of the invention to：A kind of iii-nitride light emitting devices are provided, the first doping is introduced in electronic barrier layer
Layer, the first doped layer lift the Mg incorporation efficiencies in the second doped layer using the method for being alternately passed through In sources and Mg sources, so as to
The hole concentration in electronic barrier layer is lifted, reduces the resistance of electronic barrier layer, reduces operating voltage.
Technical scheme includes：One substrate, a low temperature buffer layer, a non-nitrating compound layer, a n-type nitride
Layer, a multiquantum well region, a high hole concentration electronic barrier layer, a p-type nitride layer, a P type contact layer and p-type electricity
Pole.Wherein, high hole concentration electronic barrier layer includes the first doped layer and the second doped layer, and friendship is employed in the first doped layer
For being passed through the mode of In sources and Mg doped sources so that growth front end remains with the Mg atoms of higher concentration, by increasing capacitance it is possible to increase second mixes
Mg incorporation efficiency in diamicton, increase hole concentration, reduce resistivity.
In the above-mentioned methods, the first doped layer is realized by the way of In sources and Mg sources is alternately passed through, and concrete mode is dimension
Hold NH3Reative cell is continually fed into, and is followed the steps below：
（1）It is passed through Mg sources, duration t1；
（2）Turn off Mg sources, be passed through In sources, duration t2；
（3）Turn off In sources, duration t3。
Further, in t1In time, Mg sources are only passed through, growth front end can be made to retain a certain amount of Mg atoms.
Further, after turning off Mg sources, in t2In sources are passed through in time, growth front end can be made not have Mg atoms or Mg
The fewer regional production InN of atom.
Further, because InN decomposition temperature is relatively low, easily decompose, turn off In sources, and continue t3Time, it can make
In t2The InN of generation is decomposed in time, leaves more N atom dangling bonds.
Further, in subsequent cycle, in t1Mg sources are passed through in time again, can further be located in N atoms dangling bonds
Form Mg atomic layers.
Further, time t1、t2And t3Scope be 1 ~ 3600 second.
In certain embodiments, high hole concentration electronic barrier layer is body material, can include 1 the first doped layer and 1
Individual second doped layer.
In certain embodiments, high hole concentration electronic barrier layer is superlattice structure, then includes the first of identical quantity
Doped layer and the second doped layer.
Further, the above method can play the doping concentration of the second doped layer of lifting, reduce resistivity, reduce device
Operating voltage, can especially reduce the operating voltage of device under high current.
Further, the above method can play lifting LED component photoelectric transformation efficiency, can especially reach improvement high current
The purpose of lower device radiating.
Brief description of the drawings
Fig. 1 is a kind of iii-nitride light emitting devices side view prepared using the present invention.
Fig. 2 is the iii-nitride light emitting devices high hole concentration electronic barrier layer growth course schematic diagram of embodiment 1.
Fig. 3 is the iii-nitride light emitting devices high hole concentration electron barrier layer structure schematic diagram of embodiment 2.
Fig. 4 is the iii-nitride light emitting devices high hole concentration electron barrier layer structure schematic diagram of embodiment 3.
Embodiment
For make a kind of iii-nitride light emitting devices of the present invention and preparation method thereof be more readily understood its substantive distinguishing features and its
The practicality being had, just some specific embodiments of the present invention are described in further detail with reference to accompanying drawing below.But with ShiShimonoseki
The scope of the present invention is not limited in any way in the description of embodiment and explanation.
A kind of iii-nitride light emitting devices of present invention offer and preparation method thereof, light emitting diode as illustrated in FIG. 1, from
Under supreme be followed successively by：One substrate 101, a low temperature buffer layer 102, a non-nitrating compound layer 103, a n-type nitride layer 104, one
Multiquantum well region 105, a high hole concentration electronic barrier layer 106, a p-type nitride layer 107, a P type contact layer 108 and one
Electrode 109.
Wherein high hole concentration electronic barrier layer includes the first doped layer and the second doped layer, is used in the first doped layer
Alternately it is passed through the mode of In sources and Mg doped sources so that growth front end remains with the Mg atoms of higher concentration, by increasing capacitance it is possible to increase the
Mg incorporation efficiency in two doped layers, increase hole concentration, reduce resistivity, reduce the operating voltage of device, can especially improve
LED photoelectric transformation efficiency under Bulk current injection.
Embodiment 1
The high hole concentration electronic barrier layer 106 of the present embodiment includes 1 the first doped layer 121 and 1 second doping
For layer 122. as shown in Fig. 2 the first doped layer is realized by the way of In sources and Mg sources is alternately passed through, concrete mode is maintenance NH3
Reative cell is continually fed into, and is followed the steps below：
（1）It is passed through Mg sources, duration t1；
（2）Turn off Mg sources, be passed through In sources, duration t2；
（3）Turn off In sources, duration t3。
First doped layer uses repeat step（1）~（3）To realize.In t1In time, Mg sources are only passed through, life can be made
Long front end retains a certain amount of Mg atoms；After turning off Mg sources, in t2In sources are passed through in time, growth front end can be made not have Mg former
Sub or fewer Mg atoms region forms InN coatings；Because InN decomposition temperature is relatively low, easily decomposes, turn off In
Source, and continue t3Time, it can make in t2The InN of generation is decomposed in time, leaves more N atom dangling bonds；In subsequent cycle
In, in t1Mg sources are passed through in time again, Mg atomic layers can be formed at the further place of N atom dangling bonds.
Equally distributed Mg atomic layers can be formed in growth front end using above method, in the second doped layer growth course
In, the incorporation efficiency of Mg atoms can be effectively increased, increases the hole concentration in the second doped layer, reduces resistivity.
In embodiment 1, the specific preparation process of high hole electronic barrier layer is：
（1）The doped layer 121 of growth regulation one
The growth temperature of first doped layer 121 is 900 ~ 1050 DEG C, and chamber pressure is 100 ~ 500mbar, preferably 200
Mbar, trimethyl gallium (TMGa), trimethyl indium (TMIn) trimethyl aluminium (TMAl) and ammonia (NH3) it is respectively Ga, In, Al source
With N sources, carrier gas N2.As shown in Figure 2.t1In time, Mg sources and N sources are only passed through, it is preferable that t1Time is 20s, Mg source fluxs
For 850sccm；t2Turn off Mg sources in time, be passed through In sources, it is preferable that t2Time be 30s, In source fluxs are 140sccm；t3
Turn off In sources in time, only maintain NH3It is passed through reative cell, it is preferable that t3Time be 40s.Alternatively, such as Fig. 2, the first doping
Layer can be include it is multiple from t1Time is to t3The circulation of time.
Because the diffusion length of In atoms is longer, t2In sources are passed through in time, uniform InN can be formed in sample surfaces
Atomic layer；Then, in t3Turn off In sources in time, InN atomic layers can decompose rapidly, leave substantial amounts of N atoms dangling bonds；Connect
, in t1Mg sources are passed through in time, Mg atoms can more successfully find N atom dangling bonds, have bigger probability to rest on life
Long front end is incorporated into epitaxial layer.After the completion of the growth of first doped layer, there can be n in growth front end（1≤n≤100）It is individual
Magnesium atom layer, the present embodiment are preferably 3 ~ 10.
（2）The doped layer 122 of growth regulation two
The doped layer 122 of growth regulation two, its growth conditions are on the first doped layer 121：Chamber pressure be 50 ~
500mbar, preferably 200mbar, preferably 900 ~ 1050 DEG C of underlayer temperature, 930 DEG C, trimethyl gallium (TMGa), trimethyl indium
(TMIn) trimethyl aluminium (TMAl) and ammonia (NH3) it is respectively Ga, In, Al source and N sources, carrier gas N2.As shown in Fig. 2 have
After first doped layer of multiple circulations has grown, while it is passed through Al sources, Ga sources and the doped layer of Mg sources growth regulation two.
The thickness of the second doped layer is 100nm in the embodiment, and average doping concentration is not less than 1.5 × 1019cm-3, often
The average doping concentration for advising electronic barrier layer is 5 × 1018cm-3~1×1019cm-3, for more than 1.5 times of conventional electrical barrier layer.
Embodiment 2
It is as shown in figure 3, the present embodiment is different from embodiment 1：High hole barrier layer 106 is by the first doped layer and second
The multiple period-producers of doped layer alternating growth, i.e., comprising multiple first doped layers 121 and multiple second doped layers 122.First mixes
After diamicton has been grown, in two doped layer of growth regulation, epitaxial layer can be increasingly incorporated into by growing the Mg atoms of front end, make growth front end
Mg atoms are reduced.In this embodiment, after often growth the second doped layer of a period of time, the doped layer of regrowth first, and can makes life
Long front end accumulates more Mg atoms, plays preferably doping effect.
Embodiment 3
It is as shown in figure 4, the present embodiment is different from embodiment 2：Second doped layer 122 is GaN/AlGaN superlattices
Structure, 122 are made up of GaN layer 123 and AlGaN layer 124.Then high hole barrier layer 106 is by multiple first doped layers 121, multiple
Second doped layer 122 forms.Relative to embodiment 2, the superlattice structure being made up of GaN/AlGaN, be advantageous to further reduce
The operating voltage of device.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of iii-nitride light emitting devices, including：
One substrate；
One low temperature buffer layer, positioned at substrate；
One non-nitrating compound layer, the non-nitrating compound layer are located on low temperature buffer layer；
One n-type nitride layer, the n-type nitride layer are located on non-nitrating compound layer, and being made on the n-type nitride layer has n-type
Electrode；
One multiquantum well region, the multiquantum well region are located on n-type nitride layer；
One high hole concentration electronic barrier layer, the high hole concentration electronic barrier layer are located on multiquantum well region；
One p-type nitride layer, the p-type nitride layer are located on high hole concentration electronic barrier layer；
One P type contact layer, the P type contact layer is located on p-type nitride layer, formed with p-type electrode in the P type contact layer；
It is characterized in that：The high hole concentration electronic barrier layer includes the first doped layer and the second doped layer, in the first doping
In layer by the way of In sources and Mg doped sources is alternately passed through so that the first doped layer, the second doped layer have higher doping
Concentration, the alternating is passed through In sources and the mode of Mg doped sources is specially first passed through Mg doped sources, duration t1, then close
Mg doped sources are closed, are passed through In sources.
A kind of 2. iii-nitride light emitting devices according to claim 1, it is characterised in that：The high hole concentration electronics resistance
Barrier is InxAlyGa1-x-yN body material, or include InxAlyGa1-x-yThe superlattice structure of N thin layers, wherein 0≤x≤1,0
≤y≤1。
A kind of 3. iii-nitride light emitting devices according to claim 2, it is characterised in that：The InxAlyGa1-x-yN body materials
The doping concentration of material or superlattice structure is 1 × 1019cm-3More than, stop floor height more than 1.5 times for conventional electrical.
4. a kind of preparation method of iii-nitride light emitting devices, including processing step：
One substrate is provided；
Low temperature growth buffer layer over the substrate；
Non- nitrating compound layer is grown on the low temperature buffer layer；
The growing n-type nitride layer in the non-nitrating compound layer；
Multiquantum well region is grown on the n-type nitride layer；
High hole concentration electronic barrier layer is grown on the multiquantum well region；
P-type nitride layer is grown on the high hole concentration electronic barrier layer；
P type contact layer is grown in the p-type nitride layer；
P-type electrode is formed in the P type contact layer；
It is characterized in that：The high hole concentration electronic barrier layer is first to grow the first doped layer, and is adopted in the first doped layer
With alternately In sources and Mg doped sources is passed through, higher Mg atomic concentrations are kept in growth front end so that in the doped layer of growth regulation two
The incorporation efficiency of Shi Zengjia Mg atoms, the alternating is passed through In sources and the mode of Mg doped sources is specially first passed through Mg doped sources,
Duration is t1, Mg doped sources are then switched off, are passed through In sources.
A kind of 5. preparation method of iii-nitride light emitting devices according to claim 4, it is characterised in that：First doping
Layer, the growth temperature of the second doped layer are 750 ~ 1050 DEG C.
A kind of 6. preparation method of iii-nitride light emitting devices according to claim 4, it is characterised in that：First doped layer
After having grown, there is n magnesium atom layer in growth front end, wherein n scope is 1≤n≤100.
A kind of 7. preparation method of iii-nitride light emitting devices according to claim 4, it is characterised in that：First doped layer
It is used for the incorporation efficiency and doping concentration of the second doped layer of raising using Mg sources and In sources is alternately passed through.
A kind of 8. preparation method of iii-nitride light emitting devices according to claim 4, it is characterised in that：In the first doping
In layer growth course, NH is maintained3Reative cell is continually fed into, and is followed the steps below：
It is passed through Mg sources, duration t1；
Turn off Mg sources, be passed through In sources, duration t2；
Turn off In sources, duration t3。
A kind of 9. preparation method of iii-nitride light emitting devices according to claim 8, it is characterised in that：The time t1、
t2And t3Scope be 1 ~ 3600 second.
A kind of 10. preparation method of iii-nitride light emitting devices according to claim 8, it is characterised in that：In the t3When
Between in section, growth front end can produce substantial amounts of nitrogen-atoms dangling bonds.
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| CN105576146B (en) * | 2016-03-23 | 2017-09-26 | 京东方科技集团股份有限公司 | Luminescent device and its manufacture method and display device |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN109524521B (en) * | 2018-09-27 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103985798A (en) * | 2014-05-16 | 2014-08-13 | 广东德力光电有限公司 | LED of novel quantum well structure and method for manufacturing LED |
| CN104009136A (en) * | 2014-06-16 | 2014-08-27 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method for improving luminous efficiency and LED epitaxial layer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536615B1 (en) * | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103985798A (en) * | 2014-05-16 | 2014-08-13 | 广东德力光电有限公司 | LED of novel quantum well structure and method for manufacturing LED |
| CN104009136A (en) * | 2014-06-16 | 2014-08-27 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method for improving luminous efficiency and LED epitaxial layer |
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