CN218069879U - Light-emitting diode epitaxial wafer and light-emitting diode - Google Patents
Light-emitting diode epitaxial wafer and light-emitting diode Download PDFInfo
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Abstract
The utility model provides a light emitting diode epitaxial wafer and light emitting diode, the epitaxial wafer includes: a multiple quantum well layer; the inserting layer is grown on the multi-quantum well layer and comprises a first sublayer, a second sublayer and a third sublayer which are sequentially grown on the multi-quantum well layer, the first sublayer is an InAlGaN layer, the second sublayer is a periodic composite structure layer formed by alternately laminating AlN layers and MgN layers, and the third sublayer is a periodic composite layer formed by alternately laminating P-type InGaN layers and AlGaN layers; and an electron blocking layer epitaxially grown over the third sublayer of the insertion layer. The utility model discloses an increase the inserted layer between multiple quantum well layer and electron barrier layer, the effectual crystal lattice and the energy level that have increased quantum well and electron barrier layer match, have increased the injection and the extension in hole, have partial electron barrier layer's effect simultaneously, have increased the recombination efficiency of current carrier, have promoted emitting diode's luminous efficacy.
Description
Technical Field
The utility model relates to a light emitting diode technical field, in particular to light emitting diode epitaxial wafer and light emitting diode.
Background
An LED (Light Emitting Diode) is a semiconductor electronic component capable of Emitting Light, and is widely used in various fields due to its characteristics of small size, high brightness, low energy consumption, and the like. Among them, gaN-based LEDs are a common type of LEDs, and have been widely applied to the solid-state lighting field and the display field, attracting more and more attention.
One of the difficulties faced in the growth of current GaN materials is the enhancement of hole concentration and hole mobility. If the electron barrier layer is directly grown after the growth of the multi-quantum well layer is finished, a potential barrier peak exists between the quantum well and the electron barrier layer due to the drastic change of an energy band, and the potential barrier peak becomes a hole consumption area and hinders the effective injection of holes; moreover, the multiple quantum well layer and the P-type layer can generate larger lattice mismatch, generate more defects, are not beneficial to injection of holes, and can also influence the surface flatness. This greatly affects the hole transport and injection efficiency, resulting in a decrease in the luminous efficiency
SUMMERY OF THE UTILITY MODEL
Based on this, the present invention provides an led epitaxial wafer and an led, aiming to solve at least one technical problem in the background art.
According to the utility model discloses among them a light emitting diode epitaxial wafer, include:
a multiple quantum well layer;
the multilayer composite structure comprises an insertion layer grown on a multi-quantum well layer, wherein the insertion layer comprises a first sublayer, a second sublayer and a third sublayer sequentially grown on the multi-quantum well layer, the first sublayer is an InAlGaN layer, the second sublayer is a periodic composite structure layer formed by alternately stacking AlN layers and MgN layers, and the third sublayer is a periodic composite layer formed by alternately stacking P-type InGaN layers and AlGaN layers; and
an electron blocking layer epitaxially grown over a third sublayer of the insertion layer.
Preferably, the number of cycles of the periodic composite structure layer of the second sublayer is 2 to 6.
Preferably, the periodic composite structure layer of the third sublayer has a period number of 2 to 6.
Preferably, the multi-quantum well structure further comprises a substrate, and a low-temperature buffer layer, an undoped GaN layer and an N-type GaN layer which are epitaxially grown on the substrate, wherein the multi-quantum well layer is grown on the N-type GaN layer.
Preferably, the solar cell further comprises a p-type doped GaN layer, wherein the p-type doped GaN layer is grown on the electron blocking layer.
Preferably, the thickness of the low temperature buffer layer is 10-50nm, and the thickness of the undoped GaN layer is 1-3 μm.
Preferably, the multiple quantum well layer is a periodic composite structure layer formed by alternately laminating quantum well layers and quantum barrier layers, and the period number of the periodic composite structure layer of the multiple quantum well layer is 5-11.
Preferably, the thickness of the quantum well layer is 2-4nm, and the thickness of the quantum barrier layer is 5-15nm.
Preferably, the thickness of the InAlGaN layer is 1-3nm;
the total thickness of the second sub-layer is 20-50nm, the thickness of the AlN layer is 3-8nm, and the thickness of the MgN layer is 3-8nm;
the total thickness of the third sub-layer is 10-30nm, the thickness of the P-type InGaN layer is 1-3nm, and the thickness of the AlGaN layer is 1-3nm.
Preferably, the electron blocking layer is a superlattice structure of GaN and AlGaN, and the thickness of the electron blocking layer is 30-100nm.
Preferably, the thickness of the P-type doped GaN layer is 50-300nm.
The embodiment of the utility model provides an on the other hand still provides a light emitting diode, including epitaxial structure and set up in electrode on the epitaxial structure, epitaxial structure is foretell light emitting diode epitaxial wafer.
Compared with the prior art: the InAlGaN layer is grown firstly after the multi-quantum well layer grows, mainly aiming at increasing the lattice matching with the quantum well layer, and the InAlGaN quaternary structure is used, because the In atom is larger, the lattice quality of a pure InGaN epitaxial layer is relatively poorer, the Al element is added, and because the lattice constant of the AlN atom is smaller than that of the GaN, the strength of the covalent bond between the Al atom and the N atom is far greater than that of the covalent bond between the Ga atom and the N atom, the damage effect on the GaN crystal structure can be effectively resisted and blocked, the integrity of the GaN crystal lattice is maintained, the crystal lattice is more stable, and the step of the layer can be increased by adding the Al atom, so that the step can be smoothly transited;
the second sublayer is a periodic composite structure layer composed of AlN and MgN, the superlattice layer of the AlN and MgN group layer can be used as a defect barrier layer firstly, and dislocation caused after the growth of the quantum well layer is distorted and annihilated in the superlattice layer; the superlattice layer can also form two-dimensional electron gas, so that the mobility of a current carrier is increased, and the injection of holes and the expansion of the holes are facilitated in a region close to the quantum well; the energy level of the layer is higher, and the electron blocking layer can be assisted to play a role in electron blocking; the relative temperature of the layer is highest, and the crystal lattice quality of the layer is improved mainly due to high temperature, so that the defect blocking effect is stronger;
the third sublayer is a periodic structure formed by P-type InGaN and AlGaN layers, the P-type InGaN layer and the AlGaN layer are used as a junction layer of the P-type layers and are similar to the growth material of the electronic barrier layer, but the energy level is lower firstly, and the matching with the crystal lattice and the energy level of the electronic barrier layer is increased; and the P-type doping can play a role In expanding holes, a small number of holes are provided, the concentration of the holes and the hole expansion are increased, and In is an activator of Mg and is beneficial to opening Mg-H bonds. The lattice quality of the P-type InGaN layer is relatively poor, and an epitaxial layer with higher lattice quality can be obtained by matching the circulation structure of AlGaN with a stable structure;
in a word, the utility model discloses an increase the inserted layer between multiple quantum well layer and electron barrier, the effectual lattice and the energy level that have increased quantum well and electron barrier match, have increased the injection and the extension in hole, have partial electron barrier's effect simultaneously, have increased the recombination efficiency of current carrier, have promoted emitting diode's luminous efficacy.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of an interposer according to a first embodiment of the present invention.
The following detailed description of the invention will be further described in conjunction with the above-identified drawings.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Several embodiments of the invention are given in the accompanying drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example one
The utility model provides a light emitting diode epitaxial wafer on the one hand, please refer to fig. 1, show to the utility model provides a light emitting diode epitaxial wafer in the first, including substrate 1, and epitaxial growth low temperature buffer layer 2 on substrate 1 in proper order, undoped GaN layer 3, N type GaN layer 4, multiple quantum well layer 5, insertion layer 6, electron barrier layer 7 and p type doping GaN layer 8, through add insertion layer 6 between multiple quantum well layer 5 and electron barrier layer 7 and solve lattice and the unmatched problem of ability rank between multiple quantum well and the electron barrier layer to finally promote light emitting diode's luminous efficacy.
Specifically, referring to fig. 2, the insertion layer 6 includes a first sublayer 61, a second sublayer 62 and a third sublayer 63 sequentially grown on the multiple quantum well layer 5, and the electron blocking layer 7 is epitaxially grown on the third sublayer 63 of the insertion layer. In the present embodiment, the first sublayer 61 is an InAlGaN layer, the second sublayer 62 is a periodic composite structure layer formed by alternately stacking AlN layers and MgN layers, and the third sublayer 63 is a periodic composite layer formed by alternately stacking P-type InGaN layers and AlGaN layers. The mechanism of action of the insertion layer structured as above in the present embodiment is as follows:
firstly, after a multi-quantum well layer grows, an InAlGaN layer grows firstly, mainly aiming at increasing lattice matching with the quantum well layer, and an InAlGaN quaternary structure is used, because In atoms are larger, the lattice quality of a pure InGaN epitaxial layer is relatively poorer, al elements are added, and because the lattice constant of AlN atoms is smaller than that of GaN, the strength of covalent bonds between Al atoms and N atoms is far greater than that between Ga atoms and N atoms, the damage effect on the GaN crystal structure can be effectively resisted and blocked, the integrity of GaN crystal lattices is maintained, the crystal lattices are more stable, and the energy level of the layer can be increased by adding Al atoms, so that the gradual transition of the energy level is facilitated;
then, alN layers and MgN layers alternately grow on the InAlGaN layer, a superlattice layer consisting of AlN and MgN can be used as a defect barrier layer, and dislocation caused after the growth of the quantum well layer is distorted and annihilated in the superlattice layer; the superlattice layer can also form two-dimensional electron gas, so that the mobility of a current carrier is increased, and the injection of holes and the expansion of the holes are facilitated in a region close to the quantum well; the energy level of the layer is higher, and the electron blocking layer can be assisted to play a role in electron blocking; the relative temperature of the layer is highest, and the crystal lattice quality of the layer is improved mainly due to high temperature, so that the defect blocking effect is stronger;
finally, alternately growing a P-type InGaN layer and an AlGaN layer on the superlattice layer consisting of AlN and MgN, wherein the P-type InGaN layer and the AlGaN layer are used as a connecting layer of the P-type layer and are similar to the growth material of the electron blocking layer, but the energy level is lower firstly, and the matching with the lattice and the energy level of the electron blocking layer is increased; and the P-type doping can play a role In expanding holes, a small number of holes are provided, the concentration of the holes and the hole expansion are increased, and In is an activator of Mg and is beneficial to opening Mg-H bonds. And the lattice quality of the P-type InGaN layer is relatively poor, and an epitaxial layer with higher lattice quality can be obtained by matching the circulation structure of the AlGaN with a stable structure.
In some preferred embodiments of the present embodiment, the growth pressure of the first sub-layer 61 is 200-300Torr, the growth pressure of the second sub-layer 62 is 300-600Torr, the growth pressure of the third sub-layer 63 is 50-150Torr, the growth temperature of the first sub-layer 61 is 850-900 ℃, the growth temperature of the second sub-layer 62 is 950-1000 ℃, and the growth temperature of the third sub-layer 63 is 900-950 ℃, i.e., the second sub-layer 62 is preferably grown at high temperature and high pressure, which is favorable for incorporation of Al and Mg elements, and the high temperature promotes the lattice quality thereof, and the defect blocking effect is stronger. The third sublayer 63 is preferably grown at a low pressure which enables the P-type InGaN layer to be grown with better lattice quality.
In addition, in the preferred embodiment, the period number of the periodic composite structure layer of the second sub-layer 62 is preferably 2-6, i.e. the AlN layer and the MgN layer are alternately laminated and repeated 2-6 times, while the period number of the periodic composite structure layer of the third sub-layer 63 is 2-6, i.e. the P-type InGaN layer and the AlGaN layer are alternately laminated and repeated 2-6 times. The multi-quantum well layer 5 is a periodic composite structure layer formed by alternately laminating quantum well layers and quantum barrier layers, the period number of the periodic composite structure layer of the multi-quantum well layer 5 is 5-11, namely the quantum well layer and the quantum barrier layers are alternately laminated and repeated for 5-11 times, the electronic barrier layer 7 is a superlattice structure of GaN and AlGaN, namely the electronic barrier layer is also a periodic composite structure layer formed by alternately laminating GaN layers and AlGaN layers, the thickness of the low-temperature buffer layer 2 is 10-50nm, and the thickness of the undoped GaN layer 3 is 1-3 mu m. The thickness of the quantum well layer is 2-4nm, and the thickness of the quantum barrier layer is 5-15nm. The thickness of the electron blocking layer is 30-100nm. The thickness of the P-type doped GaN layer is 50-300nm. The thickness of the InAlGaN layer is preferably 1 to 3nm, and if the thickness is too thick, deterioration of lattice quality may be caused, and if the thickness is too thin, the purpose of lattice matching with the multiple quantum well layer cannot be increased. The total thickness of the second sub-layer is preferably 20-50nm, wherein the thickness of a single AlN layer is preferably 3-8nm, and the thickness of a single MgN layer is preferably 3-8nm, and in the thick range, good lattice quality can be obtained, and the hole expansion capability is increased. The total thickness of the third sub-layer is preferably 10-30nm, wherein the thickness of a single P-type InGaN layer is preferably 1-3nm, the thickness of a single AlGaN layer is preferably 1-3nm, and the thickness of the single layer is relatively thin, and mainly, the thickness is too thick, so that light emitting is not facilitated, and the luminous efficiency is influenced.
Example two
The utility model discloses another aspect provides a manufacturing method of emitting diode epitaxial wafer, can be used to prepare the emitting diode epitaxial wafer in the above-mentioned embodiment one, and this method adopts high-purity H 2 Or high purity N 2 As carrier gas, high purity NH 3 As the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as the gallium source, trimethylindium (TMIn) as the indium source, silane (SiH) 4 ) As N-type dopant, trimethylaluminum (TMAl) as aluminum source, magnesium diclomentate (CP) 2 Mg) as a P-type dopant, the method specifically comprising:
step 201: a substrate is provided, which may be a sapphire substrate or a Si substrate. The substrate was placed in a reaction chamber at a temperature of about 1100 deg.C and a pressure of about 300Torr in H 2 And carrying out heat treatment on the surface of the substrate in the atmosphere for about 5-8min, wherein the heat treatment is mainly used for releasing the internal stress of the substrate.
Step 202: and growing a low-temperature buffer layer on the heat-treated substrate.
In the present embodiment, the low temperature buffer layer is made of AlGaN, and illustratively, the reaction chamber temperature of the low temperature buffer layer is about 550 ℃, and the reaction chamber pressure is 200 to 400Torr.
Step 203: and growing an undoped GaN layer on the low-temperature buffer layer.
Illustratively, the temperature of the reaction chamber for the undoped GaN layer is controlled to be 1000 to 1150 ℃ and the pressure of the reaction chamber is controlled to be 200 to 400Torr.
Step 204: and growing an N-type GaN layer on the undoped GaN layer.
Illustratively, the temperature of the reaction chamber of the N-type GaN layer is controlled to be 1000-1150 ℃, and the pressure is controlled to be 200-400 Torr; the N-type GaN layer is a GaN layer doped with Si with a doping concentration of about 1 × 1018-1 × 1019cm -3 And the overall quality of the N-type GaN layer is better under the condition.
Step 205: and growing a multi-quantum well layer on the N-type GaN layer.
In this embodiment, the multiple quantum well layer is a periodic composite structure composed of an InGaN quantum well layer and a GaN quantum barrier layer; exemplarily, the following steps are carried out: the growth pressure of the reaction chamber of the multi-quantum well layer is 100-500 Torr; the growth temperature of the quantum well layer is 700-800 ℃, and the growth temperature of the quantum barrier layer is 850-950 ℃; the periodicity of the multi-quantum well layer is n, wherein n is more than or equal to 5 and less than or equal to 11. If n is more than 11, the light emission efficiency becomes low and the material is wasted. If n is less than 5, the carrier utilization rate is low, and the light emitting efficiency of the light emitting diode is low.
Step 206: and growing an insertion layer on the multi-quantum well layer, wherein the specific growth process is as follows:
firstly, after the growth of a quantum well layer is finished, controlling the pressure of a reaction chamber to be 200-300Torr and the growth temperature to be 850-900 ℃, introducing a Mo source required by the growth of InAlGaN, and growing a first sublayer;
secondly, controlling the pressure of the reaction chamber to 300-600Torr, the growth temperature to 950-1000 ℃, alternately introducing MO sources required by AlN and MgN layers with the growth cycle number of 2-6, and growing a second sublayer;
and finally, controlling the pressure of the reaction chamber to 50-150Torr, controlling the growth temperature to be 900-950 ℃, alternately introducing MO sources required by P-type InGaN and AlGaN with the growth period of 2-6, and growing a third sublayer, wherein P-type doping is Mg.
Step 207: and growing an electron blocking layer on the insertion layer, wherein the growth temperature is 800-1000 ℃, and the growth pressure is 100-300 Torr.
In this embodiment, the electron blocking layer is a periodic composite structure composed of GaN and AlGAN, and the Al composition is about 0.2 to 0.3.
Step 208: and growing a P-type doped GaN layer on the electron blocking layer. The growth temperature is about 800-1000 ℃, the growth pressure is 100-300torr, and the P-type doping is Mg.
EXAMPLE III
The utility model discloses on the other hand provides a light emitting diode, include epitaxial structure and set up the electrode on epitaxial structure, epitaxial structure is the light emitting diode epitaxial wafer in the middle of the above-mentioned embodiment one, manufacturing method in the middle of the above-mentioned embodiment two of light emitting diode epitaxial wafer accessible is made and is formed.
To sum up, the utility model discloses emitting diode epitaxial wafer and emitting diode among the embodiment through increase the inserted layer between multiple quantum well layer and electron barrier layer, and the effectual crystal lattice and the energy rank that have increased quantum well and electron barrier layer match, have increased the injection and the extension in hole, have partial electron barrier layer's effect simultaneously, have increased the recombination efficiency of carrier, have promoted emitting diode's luminous efficacy.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A light emitting diode epitaxial wafer is characterized by comprising:
a multiple quantum well layer;
the multilayer composite structure comprises an insertion layer grown on a multi-quantum well layer, wherein the insertion layer comprises a first sublayer, a second sublayer and a third sublayer sequentially grown on the multi-quantum well layer, the first sublayer is an InAlGaN layer, the second sublayer is a periodic composite structure layer formed by alternately stacking AlN layers and MgN layers, and the third sublayer is a periodic composite layer formed by alternately stacking P-type InGaN layers and AlGaN layers; and
an electron blocking layer epitaxially grown over a third sublayer of the insertion layer.
2. The light emitting diode epitaxial wafer of claim 1, wherein the number of cycles of the periodic composite structure layer of the second sub-layer is 2-6, and the number of cycles of the periodic composite structure layer of the third sub-layer is 2-6.
3. The light emitting diode epitaxial wafer of claim 1, further comprising a substrate, and a low temperature buffer layer, an undoped GaN layer and an N-type GaN layer epitaxially grown on the substrate, wherein the multi-quantum well layer is grown on the N-type GaN layer.
4. The light emitting diode epitaxial wafer of claim 3, further comprising a p-type doped GaN layer grown on the electron blocking layer.
5. The light-emitting diode epitaxial wafer as claimed in claim 3, wherein the low-temperature buffer layer has a thickness of 10-50nm, and the undoped GaN layer has a thickness of 1-3 μm.
6. The light emitting diode epitaxial wafer of claim 1, wherein the multiple quantum well layer is a periodic composite structure layer formed by alternately laminating quantum well layers and quantum barrier layers, the period number of the periodic composite structure layer of the multiple quantum well layer is 5-11, the thickness of the quantum well layer is 2-4nm, and the thickness of the quantum barrier layers is 5-15nm.
7. The light-emitting diode epitaxial wafer according to claim 1, wherein the thickness of the InAlGaN layer is 1-3nm;
the total thickness of the second sub-layer is 20-50nm, the thickness of the AlN layer is 3-8nm, and the thickness of the MgN layer is 3-8nm;
the total thickness of the third sub-layer is 10-30nm, the thickness of the P-type InGaN layer is 1-3nm, and the thickness of the AlGaN layer is 1-3nm.
8. The light-emitting diode epitaxial wafer according to claim 1, wherein the electron blocking layer is a superlattice structure of GaN and AlGaN, and the thickness of the electron blocking layer is 30-100nm.
9. The light-emitting diode epitaxial wafer according to claim 4, wherein the thickness of the P-type doped GaN layer is 50-300nm.
10. A light emitting diode comprising an epitaxial structure and an electrode disposed on the epitaxial structure, wherein the epitaxial structure is the light emitting diode epitaxial wafer of any one of claims 1 to 9.
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