CN105428477A - GaN-based LED epitaxial wafer and preparation method therefor - Google Patents
GaN-based LED epitaxial wafer and preparation method therefor Download PDFInfo
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- CN105428477A CN105428477A CN201510986523.2A CN201510986523A CN105428477A CN 105428477 A CN105428477 A CN 105428477A CN 201510986523 A CN201510986523 A CN 201510986523A CN 105428477 A CN105428477 A CN 105428477A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 238000005036 potential barrier Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a GaN-based LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device characterized by a semiconductor and a preparation method for the device. The epitaxial wafer comprises a four-inch silicon substrate; and an AlN/AlGaN buffer layer, an unintentional doped U type GaN layer, a silicon doped N type GaN layer, an InGaN/GaN multiple quantum well luminous layer, a low temperature P type GaN layer, a P type superlattice AlInGaN/InGaN electronic barrier layer and a high temperature P type GaN layer are arranged on the upper surface of the four-inch silicon substrate from the bottom up in sequence. The epitaxial wafer improves the light output power of the LED under high electric current density injection; compared with the conventional P-AlGaN potential barrier structured epitaxial wafer, the light output power is improved by approximate 5-10% by the GaN-based LED epitaxial wafer provided by the invention; and meanwhile, the anti-static capability of the LED chip is improved by approximate 3-6%.
Description
Technical field
The present invention relates to semiconductor is device and preparation method thereof the technical field of feature, particularly relates to a kind of GaN base LED and preparation method thereof.
Background technology
LED is a kind of solid-state semiconductor device electric energy being converted into luminous energy, relative to conventional light source, LED has the advantages that volume is little, long service life, fast response time, luminous efficiency are high, and therefore LED becomes a kind of novel green light source got most of the attention and enters lighting field.But there is the problem of luminous efficiency decay in LED under Bulk current injection, limits exploitation that is high-power, high-brightness LED to a certain extent, also constrain the development of LED at general illumination field.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of GaN base LED and preparation method thereof, described epitaxial wafer improves the optical output power of LED under high current density injects, improve nearly 5% ~ 10% than the epitaxial wafer optical output power of traditional P-AlGaN barrier structure, LED chip antistatic effect also improves nearly 3% ~ 6% simultaneously.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of GaN base LED, it is characterized in that comprising: 4 inches of silicon substrates, the upper surface of described 4 inches of silicon substrates is followed successively by AlN/AlGaN resilient coating, the U-shaped GaN layer of involuntary doping, silicon doping N-type GaN layer, InGaN/GaN multiple quantum trap luminescent layer, low temperature P type GaN layer, P type superlattice AlInGaN/InGaN electronic barrier layer and high temperature P type GaN layer from top to bottom.
Further technical scheme is: described its periodicity of P type superlattice AlInGaN/InGaN electronic barrier layer is 3 ~ 10 right.
The invention also discloses a kind of GaN base LED preparation method, it is characterized in that comprising: in upper surface growing AIN/AlGaN resilient coating, the U-shaped GaN layer of involuntary doping, silicon doping N-type GaN layer, InGaN/GaN multiple quantum trap luminescent layer, low temperature P type GaN layer, P type superlattice AlInGaN/InGaN electronic barrier layer and the high temperature P type GaN layer successively from top to bottom of 4 inches of silicon substrates;
The growing method of described AlInGaN/InGaN electronic barrier layer is as follows: use hydrogen as carrier gas, V race's nitrogenous source is kept to continue to pass into, first pass into III race's gallium source, the luxuriant magnesium of acceptor dopants two, III race's aluminium source, III race's indium source, close III race's aluminium source afterwards, make the thickness of AlInGaN and InGaN layer between 2nm ~ 8nm.
Further technical scheme is: described growth temperature remains between 800 ° of C ~ 1000 ° C.
The beneficial effect adopting technique scheme to produce is: due to the insertion of P type superlattice AlInGaN/InGaN layer, the barrier height of Multiple-quantum potential barrier (MQB) can be improved, limit the spilling of electronics from active light emitting area, suppress electronics under Bulk current injection to overflow to P type barrier region and hole and non-radiative recombination occurs, thus avoid high current density to inject the phenomenon of lower luminous efficiency decline, simultaneously by P type superlattice AlInGaN/InGaN electronic barrier layer, improve LED chip antistatic effect, realize LED the increasing substantially of ESD under Bulk current injection.
Described method is by changing Al component in P type superlattice AlInGaN/InGaN electronic barrier layer growth course, the flow of In component and Mg, can well electronics be limited to quantum well region and keep high crystalline quality of material, and growth temperature remains between 800 ~ 1000 ° of C, and solve by the method reducing TMGa flow the problem that p-AlInGaN/InGaN doping efficiency is low and hole injection is not enough, the P type superlattice AlInGaN/InGaN electronic barrier layer grown under optimal conditions, drastically increase the probability that radiation recombination occurs in quantum well region and hole electronics, improve the optical output power of LED under high current density injects, nearly 5% ~ 10% is improve than the epitaxial wafer optical output power of traditional P-AlGaN barrier structure, LED chip antistatic effect also improves nearly 3% ~ 6% simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of epitaxial wafer of the present invention;
Wherein: 1,4 inches of silicon substrates 2, AlN/AlGaN resilient coating 3, U-shaped GaN layer 4, N-type GaN layer 5, InGaN/GaN multiple quantum trap luminescent layer 6, low temperature P type GaN layer 7, P type superlattice AlInGaN/InGaN electronic barrier layer 8, high temperature P type GaN layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
As shown in Figure 1, the invention discloses a kind of GaN base LED, comprise: 4 inches of silicon substrates 1, the upper surface of described 4 inches of silicon substrates 1 is followed successively by AlN/AlGaN resilient coating 2, the U-shaped GaN layer 3 of involuntary doping, silicon doping N-type GaN layer 4, InGaN/GaN multiple quantum trap luminescent layer 5, low temperature P type GaN layer 6, P type superlattice AlInGaN/InGaN electronic barrier layer 7 and high temperature P type GaN layer 8 from top to bottom.The periodicity of wherein said P type superlattice AlInGaN/InGaN electronic barrier layer 7 is 3 ~ 10 right.
The invention also discloses a kind of GaN base LED preparation method, comprising: in upper surface growing AIN/AlGaN resilient coating 2, the U-shaped GaN layer 3 of involuntary doping, silicon doping N-type GaN layer 4, InGaN/GaN multiple quantum trap luminescent layer 5, low temperature P type GaN layer 6, P type superlattice AlInGaN/InGaN electronic barrier layer 7 and the high temperature P type GaN layer 8 successively from top to bottom of 4 inches of silicon substrates 1.
Due to the insertion of P type superlattice AlInGaN/InGaN electronic barrier layer, the barrier height of Multiple-quantum potential barrier (MQB) can be improved, limit the spilling of electronics from active light emitting area, suppress electronics under Bulk current injection to overflow to P type barrier region and hole and non-radiative recombination occurs, thus avoid high current density to inject the phenomenon of lower luminous efficiency decline.Under normal circumstances, there is a lot of difficulty in the growth of P type superlattice AlInGaN/InGaN electronic barrier layer, and as poor in crystalline quality of material, lattice mismatch and magnesium activation efficiency rate of adulterating is low etc.The impact that the present invention is adulterated on P type superlattice AlInGaN/InGaN electronic barrier layer Al component, In component and Mg by the key factor such as flow of growth temperature, growth pressure and trimethyl aluminium (TMAl), trimethyl indium (TMIn).
Find by optimizing, Al composition flow rate is between 50 ~ 100, electronics can be limited to quantum well region well and keep high crystalline quality of material by In composition flow rate between 30 ~ 300, and growth temperature also remains between 800 ~ 1000 ° of C, and solve by the method reducing TMGa flow the problem that P type superlattice AlInGaN/InGaN electronic barrier layer doping efficiency is low and hole injection is not enough, the P type superlattice AlInGaN/InGaN electronic barrier layer grown under optimal conditions, drastically increase the probability that radiation recombination occurs in quantum well region and hole electronics, improve the optical output power of LED under high current density injects, nearly 5% ~ 10% is improve than the epitaxial wafer optical output power of traditional P-AlGaN barrier structure, LED chip antistatic effect also improves nearly 3% ~ 6% simultaneously.
Claims (4)
1. a GaN base LED, it is characterized in that comprising: 4 inches of silicon substrates (1), the upper surface of described 4 inches of silicon substrates (1) is followed successively by AlN/AlGaN resilient coating (2), the U-shaped GaN layer of involuntary doping (3), silicon doping N-type GaN layer (4), InGaN/GaN multiple quantum trap luminescent layer (5), low temperature P type GaN layer (6), P type superlattice AlInGaN/InGaN electronic barrier layer (7) and high temperature P type GaN layer (8) from top to bottom.
2. GaN base LED as claimed in claim 1, is characterized in that comprising: the periodicity of described P type superlattice AlInGaN/InGaN electronic barrier layer (7) is 3 ~ 10 right.
3. a GaN base LED preparation method, is characterized in that comprising: in upper surface growing AIN/AlGaN resilient coating (2), the U-shaped GaN layer of involuntary doping (3), silicon doping N-type GaN layer (4), InGaN/GaN multiple quantum trap luminescent layer (5), low temperature P type GaN layer (6), P type superlattice AlInGaN/InGaN electronic barrier layer (7) and high temperature P type GaN layer (8) successively from top to bottom of 4 inches of silicon substrates (1);
The growing method of described AlInGaN/InGaN electronic barrier layer (7) is as follows: use hydrogen as carrier gas, V race's nitrogenous source is kept to continue to pass into, first pass into III race's gallium source, the luxuriant magnesium of acceptor dopants two, III race's aluminium source, III race's indium source, close III race's aluminium source afterwards, make the thickness of AlInGaN and InGaN layer between 2nm ~ 8nm.
4. GaN base LED preparation method as claimed in claim 3, is characterized in that: described growth temperature remains between 800 ° of C ~ 1000 ° C.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| CN110635005A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN116845164A (en) * | 2023-08-31 | 2023-10-03 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666398A (en) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | A kind of LED epitaxial structure and its growing method |
| CN110635005A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN112563381B (en) * | 2020-12-29 | 2022-04-05 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN116845164A (en) * | 2023-08-31 | 2023-10-03 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
| CN116845164B (en) * | 2023-08-31 | 2023-12-08 | 江西兆驰半导体有限公司 | LED epitaxial wafer, preparation method thereof and LED |
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Application publication date: 20160323 |