CN103681985B - Epitaxial wafer of a kind of light emitting diode and preparation method thereof - Google Patents
Epitaxial wafer of a kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN103681985B CN103681985B CN201310593671.9A CN201310593671A CN103681985B CN 103681985 B CN103681985 B CN 103681985B CN 201310593671 A CN201310593671 A CN 201310593671A CN 103681985 B CN103681985 B CN 103681985B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 227
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 143
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000470 constituent Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000013598 vector Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses epitaxial wafer of a kind of light emitting diode and preparation method thereof, belong to technical field of semiconductors. This epitaxial wafer comprises substrate, is grown in the gallium nitride layer of the low temperature buffer layer on substrate, non-doping, n type gallium nitride layer, multiple quantum well layer and P type gallium nitride layer, and at least one quantum barrier layer starting from n type gallium nitride layer one side adopts AlxGa1-xN growth, 0<x<0.3, at least one quantum barrier layer starting from P type gallium nitride layer one side adopts InzGa1-zN growth, 0<z<0.15, P type gallium nitride layer is grown directly upon on multiple quantum well layer. The present invention is higher by making near the quantum barrier layer potential barrier of n type gallium nitride layer, quantum barrier layer potential barrier near P type gallium nitride layer is lower, in reducing the overflow phenomena of electronics, can improve the injection efficiency in hole, more electronics and hole are entered in quantum well layer compound, thereby improve light emitting diode internal quantum efficiency.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of epitaxial wafer of light emitting diode and making thereofMethod.
Background technology
GaN(gallium nitride) be the Typical Representative of third generation semiconductor material with wide forbidden band, its excellent high heat conductance,The characteristics such as high temperature resistant, acid and alkali-resistance, high rigidity, are widely used in it and make blue, green, ultra-violet light-emittingDiode. GaN based light-emitting diode generally includes epitaxial wafer and is located at the electrode on epitaxial wafer.
Existing a kind of GaN based semiconductor light emitting epitaxial wafer, it comprises substrate and is grown in successively substrateOn N-type layer, multiple quantum well layer, electronic barrier layer and P type layer, wherein, the structure of MQW isInGaN/GaN, it provides constraints to carrier, in the time that forward current passes through, the electronics in N-type layer and PHole in type layer is limited in quantum well layer luminous. Electronic barrier layer can reduce the overflow phenomena of electronics,Thereby improve the injection efficiency of carrier, and then improve the brightness of light emitting diode.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
Electronic barrier layer in block electrons overflow, has also stopped in the sub-trap of hole vectors and has injected, causedThe internal quantum efficiency of light emitting diode is still lower, and then causes the raising degree of the brightness of light emitting diode to haveLimit.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the present invention provides a kind of epitaxial wafer of light emitting diodeAnd preparation method thereof. Described technical scheme is as follows:
On the one hand, the embodiment of the present invention provides a kind of epitaxial wafer of light emitting diode, and described epitaxial wafer comprisesSubstrate, the gallium nitride layer that is grown in the low temperature buffer layer on described substrate, non-doping, n type gallium nitride layer,Multiple quantum well layer and P type gallium nitride layer, described multiple quantum well layer is superlattice structure, described superlattice structureComprise quantum well layer and the quantum barrier layer of alternating growth, what start from described n type gallium nitride layer one side is at least oneIndividual quantum barrier layer adopts AlxGa1-xN growth, 0 < x < 0.3, starts extremely from described P type gallium nitride layer one sideA few quantum barrier layer adopts InzGa1-zN growth, 0 < z < 0.15, described P type gallium nitride layer is grown directly uponOn described multiple quantum well layer.
Preferably, at least two quantum barrier layers that start from described n type gallium nitride layer one side adopt AlxGa1-xNGrowth, the Al constituent content at least two quantum barrier layers that start from described n type gallium nitride layer one side is fixedConstant or successively raise or successively reduce.
Preferably, at least two quantum barrier layers that start from described P type gallium nitride layer one side adopt InzGa1-zNGrowth, the In constituent content at least two quantum barrier layers that start from described P type gallium nitride layer one side is fixedConstant or successively raise or successively reduce.
Preferably, the barrier height of the middle quantum barrier layer of described multiple quantum well layer is more than or equal to described from instituteState the barrier height of at least one quantum barrier layer that P type gallium nitride layer one side starts, described in the middle of quantum barrier layerBarrier height be less than or equal to described at least one quantum barrier layer starting from described n type gallium nitride layer one sideBarrier height, described in the middle of quantum barrier layer be to start from described n type gallium nitride layer one side except describedAt least one quantum barrier layer and described at least one quantum barrier layer starting from described P type gallium nitride layer one side withOuter quantum barrier layer.
Further, described middle quantum barrier layer is AlxGa1-xN layer, InzGa1-zN layer or GaN layer.
Preferably, the thickness of each quantum well layer of described multiple quantum well layer is respectively 2-3nm, each quantum barrier layerThickness is respectively 10-20nm.
Further, the thickness of the each quantum barrier layer in described multiple quantum well layer equates or is unequal.
Preferably, described quantum well layer is InGaN layer, and described from described quantum barrier layer the component of In containAmount is less than the constituent content of In in each quantum well layer.
Alternatively, the each quantum barrier layer in described multiple quantum well layer has silicon doping.
On the other hand, the embodiment of the present invention provides a kind of preparation method of epitaxial wafer of light emitting diode, instituteThe method of stating comprises:
One substrate is provided;
In gallium nitride layer, n type gallium nitride layer, the volume of described Grown low temperature buffer layer, non-dopingSub-trap layer and P type gallium nitride layer, described multiple quantum well layer is superlattice structure, described superlattice structure comprisesThe quantum well layer of alternating growth and quantum barrier layer, at least one amount starting from described n type gallium nitride layer one sideSon is built layer and is adopted AlxGa1-xN growth, 0 < x < 0.3, what start from described P type gallium nitride layer one side is at least oneIndividual quantum barrier layer adopts InzGa1-zN growth, 0 < z < 0.15, described in described P type gallium nitride layer is grown directly uponOn multiple quantum well layer.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layerxGa1-xNGrow, improved the barrier height of this quantum barrier layer, electronics is slowed down, and then reduce electronics overflow. To lean onIn the multiple quantum well layer of nearly P type gallium nitride layer, at least one quantum barrier layer adopts InzGa1-zN growth, thus fallThe low barrier effect to hole, has improved the injection efficiency in hole, has finally made more electronics and skyCave is limited in recombination luminescence in SQW, thereby has improved the internal quantum efficiency of light emitting diode.
Brief description of the drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, institute in describing embodiment belowNeed the accompanying drawing using to be briefly described, apparently, the accompanying drawing in the following describes is only the present inventionSome embodiment, for those of ordinary skill in the art, do not paying under the prerequisite of creative work,Can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of the epitaxial wafer of a kind of light emitting diode of providing of the embodiment of the present invention one;
Fig. 1 a is a kind of part band structure schematic diagram of multiple quantum well layer in epitaxial wafer shown in Fig. 1;
Fig. 1 b is the part band structure schematic diagram of another kind of multiple quantum well layer in epitaxial wafer shown in Fig. 1;
Fig. 2 is the structural representation of the epitaxial wafer of a kind of light emitting diode of providing of the embodiment of the present invention two;
Fig. 3 is the flow process of the preparation method of the epitaxial wafer of a kind of light emitting diode of providing of the embodiment of the present invention threeFigure;
Fig. 3 a is the growth structure schematic diagram of a kind of multiple quantum well layer of providing of embodiment tri-.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to the present inventionEmbodiment is described in further detail.
Embodiment mono-
The embodiment of the present invention provides a kind of epitaxial wafer of light emitting diode, and referring to Fig. 1, this epitaxial wafer comprises liningThe end 1, the gallium nitride layer 3 that is grown in the low temperature buffer layer 2 on substrate 1, non-doping, n type gallium nitride layer 4,Multiple quantum well layer 5 and P type gallium nitride layer 6, multiple quantum well layer 5 is superlattice structure, this superlattice structure bagDraw together quantum well layer 51 and quantum barrier layer 52(is shown in Fig. 1 a and 1b), quantum well layer 51 and quantum barrier layer 52 are handed overFor growth, wherein, at least one the quantum barrier layer 52a starting from n type gallium nitride layer one side adopts AlxGa1-xNGrowth, 0 < x < 0.3, at least one the quantum barrier layer 52b starting from P type gallium nitride layer one side adopts InzGa1-zNGrowth, 0 < z < 0.15, and P type gallium nitride layer 6 is grown directly upon on multiple quantum well layer 5.
Preferably, the periodicity of multiple quantum well layer is 5-15, but not as limit, can be according to realityNeed to arrange. Quantum barrier layer 52a is preferably two or three, quantum barrier layer 52b be preferably one orTwo.
Further, when quantum barrier layer 52a(adopts AlxGa1-xN growth) during at least two, at least twoAl constituent content in individual quantum barrier layer 52a can immobilize or successively raises or successively reduce; Work as quantumBuild layer 52b(and adopt InzGa1-zN growth) during at least two, the In at least two quantum barrier layer 52bConstituent content can immobilize or successively raises or successively reduce. Wherein, content immobilizes along from NType gallium nitride layer 4 to the P direction x of type gallium nitride layer 6 and the value of Z do not change; Content successively raisesOr successively reduce along successively increasing from n type gallium nitride layer 4 to the P direction x of type gallium nitride layer 6 and the value of ZReduce greatly or successively.
In the present embodiment, quantum barrier layer 52c in the middle of multiple quantum well layer 5 also comprises, middle quantum barrier layer 52cBarrier height be more than or equal to the barrier height of quantum barrier layer 52b, the potential barrier of middle quantum barrier layer 52c is highDegree is less than or equal to the barrier height of quantum barrier layer 52a, and middle quantum barrier layer 52c is, except from N-type nitrogenChange at least one quantum barrier layer 52a that gallium layer one side start and start from P type gallium nitride layer one side at least oneQuantum barrier layer beyond individual quantum barrier layer 52b. The barrier height of quantum barrier layer 5a is higher, can make electronics enterRow slows down, and reduces electronics overflow, thereby more electronics is focused in MQW, quantum barrier layer 52bBarrier height lower, can reduce the resistance to hole, be conducive to the injection in hole, finally can make moreMany electronics and hole recombination luminescence in SQW.
Further, middle quantum barrier layer 52c can be AlxGa1-xN layer, InzGa1-zN layer or GaN layer.
Further, quantum well layer 51 is InGaN layer, and the constituent content of In in quantum barrier layer 52bThe constituent content that is less than In in each quantum well layer 51, is greater than SQW with the energy gap that ensures quantum barrier layerThe energy gap of layer. Easily know, quantum well layer 51 adopts InGaN growth, but has been not limited to other doping.
As an example of the present embodiment, referring to Fig. 1 a, multiple quantum well layer can comprise three quantum barrier layers52a, three quantum barrier layer 52b and three quantum barrier layer 52c. In quantum barrier layer 52a Al constituent content andIn quantum barrier layer 52b, In constituent content is all fixing, can find out the potential barrier of quantum barrier layer 52a from Fig. 1 aHighly the highest, and three quantum barrier layer 52a all equate therefore barrier height is identical because of Al constituent content; QuantumThe barrier height of building layer 52b is minimum, and three quantum barrier layer 52b are because of all equal event potential barriers of In constituent contentHighly also identical; The barrier height of the quantum barrier layer of quantum barrier layer 52c is less than the barrier height of quantum barrier layer 52a,The barrier height of quantum barrier layer 52c is greater than the barrier height of quantum barrier layer 52b.
As another example of the present embodiment, referring to Fig. 1 b, multiple quantum well layer can comprise three quantum basesLayer 52a, three quantum barrier layer 52c and three quantum barrier layer 52b. In this structure, quantum barrier layer 52aMiddle Al constituent content successively reduces, In constituent content successively increases in quantum barrier layer 52b, can from Fig. 1 bTo find out, the barrier height of quantum barrier layer 52a is the highest, and three quantum barrier layer 52a are because of Al constituent contentSuccessively reduce therefore barrier height also reduces gradually; The barrier height of quantum barrier layer 52b is minimum, and three amountsSon is built In constituent content in layer 52b successively to be increased, and therefore barrier height reduces gradually; Quantum barrier layer 52c'sBarrier height is less than the barrier height of quantum barrier layer 52a, and the barrier height of quantum barrier layer 52c is greater than quantum barrier layerThe barrier height of 52b.
Easily know, be greater than or equal to quantum barrier layer 52b's in the barrier height that meets quantum barrier layer 52cBarrier height, and the barrier height of quantum barrier layer 52c is less than or equal to the barrier height of quantum barrier layer 52aUnder prerequisite, above-mentionedly can also be for example, in quantum barrier layer 52a Al constituent content fix, quantum barrier layer 52bMiddle In constituent content successively increases; Or, in quantum barrier layer 52a Al constituent content successively reduce, quantumBuilding In constituent content in layer 52b fixes; Or, in quantum barrier layer 52a Al constituent content successively increase,In quantum barrier layer 52b, In constituent content successively reduces; Or Al constituent content is solid in quantum barrier layer 52aCalmly, in quantum barrier layer 52b, In constituent content successively reduces; Or Al component contains in quantum barrier layer 52aAmount successively increases, In constituent content is fixed in quantum barrier layer 52b.
Wherein, the Al constituent content being preferably in quantum barrier layer 52a successively reduces, in quantum barrier layer 52bIn constituent content successively increases. In this structure, in quantum barrier layer 52a Al constituent content by changeable few,The barrier height that Multiple-quantum is built layer, along reducing gradually to P type gallium nitride layer direction from n type gallium nitride layer, hasBe beneficial to the electronics making from the sub-trap layer migration of N gallium nitride type direction vector and slow down, reduce overflow; Quantum barrier layer 52bIn In many by few change, the barrier height that Multiple-quantum is built layer is along from P type gallium nitride layer to n type gallium nitride layerDirection raises gradually, is conducive to reduce the resistance of hole from the sub-trap migration of P type gallium nitride direction vector.
Preferably, the thickness of each quantum well layer of multiple quantum well layer 5 is 2-3nm, and the thickness of each quantum barrier layer is10-20nm. Owing to adopting the grow In of the quantum well layer 51 that forms of InGaN easily to spread, if quantum baseLayer 52 is thinner, just can not stop well the diffusion of the In of InGaN quantum well layer 51, and may cause InGaNThe coupling that quantum well layer is 51; The thickness of quantum barrier layer 52 is blocked up, and hole is difficult for entering into InGaN quantum51 li, trap layer, therefore, the thickness of restriction quantum barrier layer 52, what spread at the In that stops quantum well layer 51 is sameTime can also ensure that hole easily enters into 51 li of quantum well layers. In addition, the thickness setting of quantum barrier layer 52 alsoCan affect migration and the crystal mass in electronics and hole. For example,, when quantum barrier layer thickening, although can improveCrystal mass, but simultaneously can increase the barrier effect to electronics and hole, especially to the stopping of hole, thisEnough electronics and hole recombination luminescence in quantum well layer can be made not have, thereby light emitting diode can be reducedLuminous efficiency; Otherwise, when quantum barrier layer attenuate, can make again crystal mass bad, cause antistatic energyPoor, therefore the thickness of quantum barrier layer need to be controlled at OK range.
Further, the thickness of the each quantum barrier layer in multiple quantum well layer 5 can equate or is unequal. ManyEach quantum barrier layer in quantum well layer 5 can have Si(silicon) doping, the multiple quantum well layer of doping Si is conducive toReduce the resistance of light emitting diode.
Alternatively, substrate 1 includes but not limited to Sapphire Substrate.
Alternatively, low temperature buffer layer 2 can be the materials such as gallium nitride, aluminium nitride or aluminum gallium nitride.
Alternatively, n type gallium nitride layer 4 above can direct growth multiple quantum well layer 5, also can insert that other are slowRegrowth multiple quantum well layer 5 after punching layer or stress release layer. In the present embodiment, n type gallium nitride layer 4 canFor the GaN layer of Si doping, but be not limited to Si doping, this N-type GaN layer can be also many for individual layerLayer.
Alternatively, P type gallium nitride layer 6 adopts Mg(magnesium) doping GaN as growth material, easily knowRoad, in the present embodiment, P type gallium nitride layer 6 is not limited to Mg doping, P type gallium nitride layer 6 can be individual layer alsoIt can be multilayer.
Alternatively, this epitaxial slice structure can also be included in the P type contact layer of growth on P type gallium nitride layer 67。
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layerxGa1-xNGrow, improved the barrier height of this quantum barrier layer, electronics is slowed down, and then reduce electronics overflow. To lean onIn the multiple quantum well layer of nearly P type gallium nitride layer, at least one quantum barrier layer adopts InzGa1-zN growth, thus fallThe low barrier effect to hole, has improved the injection efficiency in hole, has finally made more electronics and skyCave is limited in recombination luminescence in SQW, thereby has improved the internal quantum efficiency of light emitting diode.
Embodiment bis-
The embodiment of the present invention provides a kind of epitaxial wafer of light emitting diode, the structure of the epitaxial wafer of the present embodimentBasic identical with the structure of the epitaxial wafer of embodiment mono-, difference is, the multiple quantum well layer 5 of this epitaxial waferQuantum barrier layer 52c in the middle of not comprising.
Referring to Fig. 2, this epitaxial wafer comprises the gallium nitride of substrate 1, low temperature buffer layer 2, non-doping from the bottom upLayer 3, n type gallium nitride layer 4, multiple quantum well layer 5 and P type gallium nitride layer 6, multiple quantum well layer 5 is for super brilliantLattice structure, each cycle comprises quantum well layer 51 and quantum barrier layer 52, quantum well layer 51 and quantum barrier layer 52Alternating growth, wherein, at least one the quantum barrier layer 52a starting from n type gallium nitride layer one side adoptsAlxGa1-xN growth, 0 < x < 0.3, at least one the quantum barrier layer 52b starting from P type gallium nitride layer one side adoptsUse InzGa1-zN growth, 0 < z < 0.15, and P type gallium nitride layer 6 is grown directly upon on multiple quantum well layer 5.
The epitaxial wafer of the present embodiment is except quantum barrier layer 52c in the middle of not comprising, other structure and characteristics is equalIdentical with embodiment mono-, do not repeat them here.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layerxGa1-xNGrow, improved the barrier height of this quantum barrier layer, electronics is slowed down, reduce electronics overflow. Will be near PIn the multiple quantum well layer of type gallium nitride layer, at least one quantum barrier layer adopts InzGa1-zN growth, thus reduceTo the barrier effect in hole, improve the injection efficiency in hole, finally make more electronics and hole quiltBe limited in recombination luminescence in SQW, thereby improved the internal quantum efficiency of light emitting diode.
Embodiment tri-
The embodiment of the present invention provides a kind of preparation method of epitaxial wafer of light emitting diode, referring to Fig. 3, and methodComprise:
Step 301 a: substrate is provided;
Alternatively, in the present embodiment, substrate includes but not limited to Sapphire Substrate.
In the time realizing, can be by substrate the H at 1300 DEG C2Under atmosphere, heat-treat clean sheet 10 minutesFace.
Step 302: the gallium nitride layer of low temperature growth buffer layer, non-doping, n type gallium nitride successively on substrateLayer;
Alternatively, in the present embodiment, low temperature buffer layer can be gallium nitride layer, can be also aln layerOr gallium aluminium nitrogen layer. Particularly, at 550 DEG C of temperature, grow low taking GaN as material of substrate surfaceTemperature cushion, its thickness is 20-30nm.
Particularly, the gallium nitride layer of the non-doping of growing can be temperature to be risen to 1100 DEG C, at low temperature bufferOn layer, growth a layer thickness is the GaN layer of the non-doping of 3 μ m, i.e. high temperature buffer layer.
Alternatively, n type gallium nitride layer above can direct growth multiple quantum well layer, also can insert other bufferingsRegrowth multiple quantum well layer after layer or stress release layer. In the present embodiment, n type gallium nitride layer can be mixed by siliconAssorted GaN layer, but be not limited to Si doping, this N-type GaN layer can be that individual layer can be also multilayer. ToolBody ground, a layer thickness of growing on cushion is the GaN of the Si doping of 2 μ m. Easily know N-type nitrogenChange gallium layer and be not limited to Si doping.
Step 303: the multiple quantum well layer of growing on n type gallium nitride layer, multiple quantum well layer is superlattice structure,This superlattice structure comprises quantum well layer and the quantum barrier layer of alternating growth;
Wherein, at least one quantum barrier layer how starting from n type gallium nitride layer one side adopts AlxGa1-xN growth,0 < x < 0.3, at least one quantum barrier layer starting from P type gallium nitride layer one side adopts InzGa1-zN growth,0 < z < 0.15, and P type gallium nitride layer is grown directly upon on multiple quantum well layer quantum barrier layer topmost.
Preferably, the periodicity of multiple quantum well layer is 5-15, but not as limit, can be according to realityNeed to arrange. The quantum barrier layer starting from n type gallium nitride layer one side is preferably two or three, from P typeThe quantum barrier layer that gallium nitride layer one side starts is preferably one or two.
Further, when the quantum barrier layer starting from n type gallium nitride layer one side (adopts AlxGa1-xN growth)During at least two, the Al constituent content at least two quantum barrier layers can fix or successively raise or successivelyReduce; When the quantum barrier layer starting from P type gallium nitride layer one side (adopts InzGa1-zN growth) be at least twoWhen individual, the In constituent content at least two quantum barrier layers can immobilize or successively raises or successively reduce.Wherein, content immobilizes along the value of the direction x from n type gallium nitride layer to P type gallium nitride layer and Z notChange; Content successively raises or successively reduces along the side from n type gallium nitride layer to P type gallium nitride layerValue to x and Z increases gradually or reduces gradually.
Wherein, the Al component being preferably at least one quantum barrier layer starting from n type gallium nitride layer one side containsAmount successively reduce, the In constituent content at least one quantum barrier layer starting from P type gallium nitride layer one side byLayer increases. In this structure, Al constituent content is by changeable few, the barrier height that Multiple-quantum is built layer along fromN type gallium nitride layer reduces gradually to P type gallium nitride layer direction, is conducive to make from N gallium nitride type direction vectorThe electronics of sub-trap layer migration slows down, and reduces overflow; In in the quantum barrier layer of the second quantum well layer is many by few change,The barrier height that Multiple-quantum is built layer, along raising gradually to n type gallium nitride layer direction from P type gallium nitride layer, hasBe beneficial to and reduce the resistance of hole from the sub-trap migration of P type gallium nitride direction vector.
Further, quantum well layer is InGaN layer, and in quantum barrier layer, the constituent content of In is all less than respectivelyThe constituent content of In in individual quantum well layer, to ensure that the energy gap of quantum barrier layer is greater than the forbidden band of quantum well layerWidth. Easily know, quantum well layer adopts InGaN growth, but has been not limited to other doping.
In this enforcement, quantum barrier layer in the middle of the multiple quantum well layer 5 of this epitaxial wafer also comprises, except from NAt least one quantum barrier layer that type gallium nitride layer one side starts and start from P type gallium nitride layer one side at least oneQuantum barrier layer beyond individual quantum barrier layer.
In the present embodiment, the barrier height of middle quantum barrier layer is less than or equal to from n type gallium nitride layer one sideThe barrier height of at least one quantum barrier layer that starts, is more than or equal to and starts from P type gallium nitride layer one sideThe barrier height of at least one quantum barrier layer. At least one quantum barrier layer starting from n type gallium nitride layer one sideBarrier height higher, can make electronics slow down, reduce electronics overflow, thereby make more electronics collectionIn in MQW, the barrier height of at least one quantum barrier layer starting from P type gallium nitride layer one side isLow, can reduce the resistance to hole, be conducive to the injection in hole, finally can make more electronics and skyCave is recombination luminescence in SQW.
Further, the growth of middle quantum barrier layer can be GaN layer, InzGa1-zN layer or AlxGa1-xNLayer.
In other embodiments, the multiple quantum well layer 5 of this epitaxial wafer can not comprise middle quantum barrier layer.
Preferably, the thickness of each quantum well layer of multiple quantum well layer is 2-3nm, and the thickness of each quantum barrier layer is10-20nm. Because the In of quantum well layer can spread, if quantum barrier layer is thinner, just can not stop wellThe diffusion of the In of quantum well layer, and may cause the coupling between quantum well layer; The thickness of quantum barrier layer is blocked up,Hole is difficult for entering in quantum well layer, and therefore, the thickness of restriction quantum barrier layer, is stopping InGaN quantumThe In of trap layer can also ensure that hole easily enters in quantum well layer when diffusion. In addition quantum barrier layer 52,Thickness setting also can affect migration and the crystal mass in electronics and hole. For example, when quantum barrier layer thickening,Although can improve crystal mass, can increase the barrier effect to electronics and hole, especially to sky simultaneouslyStopping of cave, this can make not have enough electronics and hole recombination luminescence in quantum well layer, thereby can fallThe luminous efficiency of low light emitting diode; Otherwise, when quantum barrier layer attenuate, can make again crystal mass bad, leadCause antistatic energy difference, therefore the thickness of quantum barrier layer need to be controlled at OK range.
Further, the thickness of the each quantum barrier layer in multiple quantum well layer can equate or is unequal. VolumeEach quantum barrier layer in sub-trap layer includes but not limited to Si doping. Doping Si is conducive to reduce light emitting diodeResistance.
In conjunction with Fig. 3 a, for example, four multiple quantum well layers of first growing on n type gallium nitride layer are alternating growth fourIndividual quantum well layer 51 and quantum barrier layer 52a, two multiple quantum well layers of regrowth are two quantum of alternating growthTrap layer 51 and quantum barrier layer 52c, two multiple quantum well layers of regrowth are two quantum well layer 51 Hes of alternating growthQuantum barrier layer 52b, and then form multiple quantum well layer. Wherein, quantum well layer all adopts InGaN growth, andIn each quantum well layer, the component of In is identical. Quantum barrier layer 52a adopts AlGaN growth, the wherein component of AlBe respectively 25%, 20%, 15% and 10%. Quantum barrier layer 52c adopts GaN growth, and quantum barrier layer 52bAdopt InGaN growth, wherein the component of In is respectively 5% and 10%. The thickness of each quantum well layer is2.5nm, the thickness of each quantum barrier layer can be 2-3nm.
It should be noted that, the each quantum well layer in this example in multiple quantum well layer and the number of plies of quantum barrier layer are onlyThe present embodiment is given an example, not as limitation of the present invention.
Step 304: growing P-type gallium nitride layer on last quantum barrier layer of multiple quantum well layer;
Alternatively, P type gallium nitride layer adopts Mg(magnesium) GaN of doping is as growth material, easily knows,In the present embodiment, P type gallium nitride layer is not limited to Mg doping, also can adopt other doping, and P type gallium nitride layer canThink that individual layer can be also multilayer. Particularly, the P that grows on last quantum barrier layer of multiple quantum well layerThe GaN of type magnesium doping, its thickness is about 300nm.
In the present embodiment, the method also comprises step 305: growing P-type contact on P type gallium nitride layerLayer.
It should be noted that, in specific implementation, the embodiment of the present invention can adopt high-purity H2Or N2DoFor carrier gas, adopt TMGa, TMAl, TMIn and NH3Respectively as Ga source, Al source, In source andN source, adopts SiH respectively4And Cp2Mg, as N-type and P type adulterant, adopts Organometallic ChemistryVapor deposition apparatus or other equipment complete epitaxial wafer growth.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By adopting Al near at least one quantum barrier layer in the multiple quantum well layer of n type gallium nitride layerxGa1-xNGrow, improved the barrier height of this quantum barrier layer, electronics is slowed down, reduce electronics overflow. Will be near PIn the multiple quantum well layer of type gallium nitride layer, at least one quantum barrier layer adopts InzGa1-zN growth, thus reduceTo the barrier effect in hole, improve the injection efficiency in hole, finally make more electronics and hole quiltBe limited in recombination luminescence in SQW, thereby improved the internal quantum efficiency of light emitting diode.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all of the present inventionWithin spirit and principle, any amendment of doing, be equal to replacement, improvement etc., all should be included in of the present inventionWithin protection domain.
Claims (10)
1. an epitaxial wafer for light emitting diode, described epitaxial wafer comprises substrate, is grown on described substrateGallium nitride layer, n type gallium nitride layer, multiple quantum well layer and the P type gallium nitride layer of low temperature buffer layer, non-doping,Described multiple quantum well layer is superlattice structure, and described superlattice structure comprises quantum well layer and the amount of alternating growthSon is built layer, it is characterized in that,
At least one quantum barrier layer starting from described n type gallium nitride layer one side adopts AlxGa1-xN growth,0 < x < 0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts InzGa1-zN growth,0 < z < 0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
2. epitaxial wafer according to claim 1, is characterized in that, from described n type gallium nitride layer one sideAt least two quantum barrier layers that start adopt AlxGa1-xN growth, starts from described n type gallium nitride layer one sideAl constituent content at least two quantum barrier layers immobilizes or successively raises or successively reduce.
3. epitaxial wafer according to claim 1, is characterized in that, from described P type gallium nitride layer one sideAt least two quantum barrier layers that start adopt InzGa1-zN growth, starts from described P type gallium nitride layer one sideIn constituent content at least two quantum barrier layers immobilizes or successively raises or successively reduce.
4. epitaxial wafer according to claim 1, is characterized in that, the intermediate quantity of described multiple quantum well layerThe barrier height that son is built layer is more than or equal to described at least one amount starting from described P type gallium nitride layer one sideSon is built the barrier height of layer, and the barrier height of described middle quantum barrier layer is less than or equal to described from described N-typeThe barrier height of at least one quantum barrier layer that gallium nitride layer one side starts, described middle quantum barrier layer is to removeDescribed at least one quantum barrier layer starting from described n type gallium nitride layer one side and described from described P type nitrogenQuantum barrier layer beyond at least one quantum barrier layer that change gallium layer one side starts.
5. epitaxial wafer according to claim 4, is characterized in that, described middle quantum barrier layer isAlxGa1-xN layer, InzGa1-zN layer or GaN layer.
6. epitaxial wafer according to claim 1, is characterized in that, each quantum of described multiple quantum well layerThe thickness of trap layer is respectively 2～3nm, and the thickness of each quantum barrier layer is respectively 10～20nm.
7. epitaxial wafer according to claim 1, is characterized in that, the each amount in described multiple quantum well layerThe thickness that son is built layer is equal or unequal.
8. epitaxial wafer according to claim 1, is characterized in that, described quantum well layer is InGaN layer,And in described quantum barrier layer, the constituent content of In is less than the constituent content of In in each quantum well layer.
9. epitaxial wafer according to claim 1, is characterized in that, the each amount in described multiple quantum well layerSon is built layer silicon doping.
10. a preparation method for the epitaxial wafer of light emitting diode, described method comprises:
One substrate is provided;
In gallium nitride layer, n type gallium nitride layer, the volume of described Grown low temperature buffer layer, non-dopingSub-trap layer and P type gallium nitride layer, described multiple quantum well layer is superlattice structure, described superlattice structure comprisesThe quantum well layer of alternating growth and quantum barrier layer, is characterized in that,
At least one quantum barrier layer starting from described n type gallium nitride layer one side adopts AlxGa1-xN growth,0 < x < 0.3, at least one quantum barrier layer starting from described P type gallium nitride layer one side adopts InzGa1-zN growth,0 < z < 0.15, described P type gallium nitride layer is grown directly upon on described multiple quantum well layer.
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| CN104201262B (en) * | 2014-09-16 | 2016-08-31 | 太原理工大学 | A kind of InGaN/AlGaN-GaN based multiquantum-well structure and preparation method thereof |
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| CN109659409B (en) * | 2018-12-05 | 2020-06-30 | 湖北深紫科技有限公司 | LED epitaxial structure and preparation method thereof |
| CN110854246B (en) * | 2019-11-15 | 2021-07-30 | 芜湖德豪润达光电科技有限公司 | Light emitting diode and light emitting diode manufacturing method |
| CN110970533B (en) * | 2019-12-30 | 2021-10-08 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
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