CN108666323A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN108666323A CN108666323A CN201711135070.8A CN201711135070A CN108666323A CN 108666323 A CN108666323 A CN 108666323A CN 201711135070 A CN201711135070 A CN 201711135070A CN 108666323 A CN108666323 A CN 108666323A
- Authority
- CN
- China
- Prior art keywords
- wiring
- column
- memory cell
- wiring layer
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 title claims abstract description 157
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 230000015654 memory Effects 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 25
- 238000003475 lamination Methods 0.000 claims description 8
- 101150104869 SLT2 gene Proteins 0.000 abstract description 19
- 101000671638 Homo sapiens Vesicle transport protein USE1 Proteins 0.000 abstract description 14
- 102100040106 Vesicle transport protein USE1 Human genes 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 252
- 239000000203 mixture Substances 0.000 description 27
- 230000008859 change Effects 0.000 description 19
- 230000006870 function Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 230000009471 action Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 101000578349 Homo sapiens Nucleolar MIF4G domain-containing protein 1 Proteins 0.000 description 12
- 102100037224 Noncompact myelin-associated protein Human genes 0.000 description 12
- 101710184695 Noncompact myelin-associated protein Proteins 0.000 description 12
- 102100027969 Nucleolar MIF4G domain-containing protein 1 Human genes 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000012795 verification Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000012217 deletion Methods 0.000 description 4
- 230000037430 deletion Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000010187 selection method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 101100481703 Arabidopsis thaliana TMK2 gene Proteins 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 1
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-061208 | 2017-03-27 | ||
JP2017061208 | 2017-03-27 | ||
JP2017168249A JP2018164070A (ja) | 2017-03-27 | 2017-09-01 | 半導体記憶装置 |
JP2017-168249 | 2017-09-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108666323A true CN108666323A (zh) | 2018-10-16 |
CN108666323B CN108666323B (zh) | 2022-01-11 |
Family
ID=63860408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711135070.8A Active CN108666323B (zh) | 2017-03-27 | 2017-11-16 | 半导体存储装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2018164070A (zh) |
CN (1) | CN108666323B (zh) |
TW (3) | TWI644399B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110036480A (zh) * | 2019-02-18 | 2019-07-19 | 长江存储科技有限责任公司 | 用于改善3d nand的页面或块尺寸和性能的沟道孔和位线架构及方法 |
CN110911412A (zh) * | 2018-09-14 | 2020-03-24 | 东芝存储器株式会社 | 半导体存储装置 |
CN111081712A (zh) * | 2018-10-19 | 2020-04-28 | 东芝存储器株式会社 | 半导体装置及半导体存储装置 |
CN111129018A (zh) * | 2018-10-31 | 2020-05-08 | 东芝存储器株式会社 | 半导体存储装置 |
CN111725229A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
CN111725212A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储器装置 |
CN111725223A (zh) * | 2019-03-18 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
CN112242401A (zh) * | 2019-07-19 | 2021-01-19 | 铠侠股份有限公司 | 半导体存储装置 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020068044A (ja) * | 2018-10-22 | 2020-04-30 | キオクシア株式会社 | 半導体記憶装置 |
JP2020136644A (ja) * | 2019-02-26 | 2020-08-31 | キオクシア株式会社 | 半導体記憶装置 |
JP2020149744A (ja) * | 2019-03-13 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
TWI720547B (zh) * | 2019-03-22 | 2021-03-01 | 日商東芝記憶體股份有限公司 | 半導體記憶裝置 |
WO2021053725A1 (ja) * | 2019-09-17 | 2021-03-25 | キオクシア株式会社 | メモリデバイス |
JP2021047964A (ja) | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
JP2021111425A (ja) | 2020-01-10 | 2021-08-02 | キオクシア株式会社 | メモリシステム |
CN115136308A (zh) * | 2020-03-12 | 2022-09-30 | 铠侠股份有限公司 | 半导体存储装置 |
JP2021150573A (ja) * | 2020-03-23 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
JP2022089065A (ja) | 2020-12-03 | 2022-06-15 | キオクシア株式会社 | 半導体記憶装置 |
JP2022095405A (ja) | 2020-12-16 | 2022-06-28 | キオクシア株式会社 | 半導体記憶装置 |
JP2022096339A (ja) | 2020-12-17 | 2022-06-29 | キオクシア株式会社 | 半導体記憶装置 |
JP2022102917A (ja) | 2020-12-25 | 2022-07-07 | キオクシア株式会社 | 半導体記憶装置 |
JP2022180178A (ja) * | 2021-05-24 | 2022-12-06 | キオクシア株式会社 | メモリシステム |
JP2023028067A (ja) * | 2021-08-18 | 2023-03-03 | キオクシア株式会社 | メモリシステム |
JP2023040926A (ja) * | 2021-09-10 | 2023-03-23 | キオクシア株式会社 | 半導体記憶装置 |
JP2023093187A (ja) | 2021-12-22 | 2023-07-04 | キオクシア株式会社 | 半導体記憶装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764096A (zh) * | 2008-12-24 | 2010-06-30 | 海力士半导体有限公司 | 垂直沟道型非易失性存储器件及其制造方法 |
CN102959693A (zh) * | 2010-06-30 | 2013-03-06 | 桑迪士克科技股份有限公司 | 超高密度垂直与非记忆器件及其制造方法 |
KR20130044706A (ko) * | 2011-10-24 | 2013-05-03 | 에스케이하이닉스 주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법 |
KR20130076458A (ko) * | 2011-12-28 | 2013-07-08 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 제조 방법 |
CN104658602A (zh) * | 2013-11-15 | 2015-05-27 | 株式会社东芝 | 非易失性半导体存储装置及存储*** |
WO2016154597A1 (en) * | 2015-03-26 | 2016-09-29 | NEO Semiconductor, Inc. | Three-dimensional double density nand flash memory |
US20170012053A1 (en) * | 2015-07-10 | 2017-01-12 | Micron Technology, Inc. | Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells |
WO2017039780A1 (en) * | 2015-08-31 | 2017-03-09 | Cypress Semiconductor Corporation | Vertical division of three-dimensional memory device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5091491B2 (ja) * | 2007-01-23 | 2012-12-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2012069217A (ja) * | 2010-09-24 | 2012-04-05 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101759659B1 (ko) * | 2011-07-25 | 2017-07-20 | 삼성전자 주식회사 | 3차원 반도체 메모리 장치 |
WO2014089795A1 (zh) * | 2012-12-13 | 2014-06-19 | 中国科学院微电子研究所 | 一种垂直沟道型三维半导体存储器件及其制备方法 |
US9397110B2 (en) * | 2014-05-21 | 2016-07-19 | Macronix International Co., Ltd. | 3D independent double gate flash memory |
KR20160111767A (ko) * | 2015-03-17 | 2016-09-27 | 에스케이하이닉스 주식회사 | 로딩 개선을 위한 3차원 비휘발성 반도체 메모리 장치 |
-
2017
- 2017-09-01 JP JP2017168249A patent/JP2018164070A/ja active Pending
- 2017-10-20 TW TW106136069A patent/TWI644399B/zh active
- 2017-10-20 TW TW110108161A patent/TWI771943B/zh active
- 2017-10-20 TW TW107137803A patent/TWI724338B/zh active
- 2017-11-16 CN CN201711135070.8A patent/CN108666323B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101764096A (zh) * | 2008-12-24 | 2010-06-30 | 海力士半导体有限公司 | 垂直沟道型非易失性存储器件及其制造方法 |
CN102959693A (zh) * | 2010-06-30 | 2013-03-06 | 桑迪士克科技股份有限公司 | 超高密度垂直与非记忆器件及其制造方法 |
KR20130044706A (ko) * | 2011-10-24 | 2013-05-03 | 에스케이하이닉스 주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법 |
KR20130076458A (ko) * | 2011-12-28 | 2013-07-08 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치의 제조 방법 |
CN104658602A (zh) * | 2013-11-15 | 2015-05-27 | 株式会社东芝 | 非易失性半导体存储装置及存储*** |
WO2016154597A1 (en) * | 2015-03-26 | 2016-09-29 | NEO Semiconductor, Inc. | Three-dimensional double density nand flash memory |
US20170012053A1 (en) * | 2015-07-10 | 2017-01-12 | Micron Technology, Inc. | Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells |
WO2017039780A1 (en) * | 2015-08-31 | 2017-03-09 | Cypress Semiconductor Corporation | Vertical division of three-dimensional memory device |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110911412B (zh) * | 2018-09-14 | 2023-12-01 | 铠侠股份有限公司 | 半导体存储装置 |
CN110911412A (zh) * | 2018-09-14 | 2020-03-24 | 东芝存储器株式会社 | 半导体存储装置 |
CN111081712A (zh) * | 2018-10-19 | 2020-04-28 | 东芝存储器株式会社 | 半导体装置及半导体存储装置 |
CN111081712B (zh) * | 2018-10-19 | 2023-12-19 | 铠侠股份有限公司 | 半导体装置及半导体存储装置 |
CN111129018A (zh) * | 2018-10-31 | 2020-05-08 | 东芝存储器株式会社 | 半导体存储装置 |
CN111129018B (zh) * | 2018-10-31 | 2023-12-22 | 铠侠股份有限公司 | 半导体存储装置 |
US11296107B2 (en) | 2019-02-18 | 2022-04-05 | Yangtze Memory Technologies Co., Ltd. | Channel hole and bitline architecture and method to improve page or block size and performance of 3D NAND |
CN110036480A (zh) * | 2019-02-18 | 2019-07-19 | 长江存储科技有限责任公司 | 用于改善3d nand的页面或块尺寸和性能的沟道孔和位线架构及方法 |
US11729978B2 (en) | 2019-02-18 | 2023-08-15 | Yangtze Memory Technologies Co., Ltd. | Channel hole and bitline architecture and method to improve page or block size and performance of 3D NAND |
CN111725223A (zh) * | 2019-03-18 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
CN111725223B (zh) * | 2019-03-18 | 2024-04-23 | 铠侠股份有限公司 | 半导体存储装置 |
CN111725212A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储器装置 |
CN111725229A (zh) * | 2019-03-22 | 2020-09-29 | 东芝存储器株式会社 | 半导体存储装置 |
CN111725212B (zh) * | 2019-03-22 | 2024-01-23 | 铠侠股份有限公司 | 半导体存储器装置 |
CN111725229B (zh) * | 2019-03-22 | 2024-01-26 | 铠侠股份有限公司 | 半导体存储装置 |
CN112242401A (zh) * | 2019-07-19 | 2021-01-19 | 铠侠股份有限公司 | 半导体存储装置 |
CN112242401B (zh) * | 2019-07-19 | 2023-10-27 | 铠侠股份有限公司 | 半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201836074A (zh) | 2018-10-01 |
TWI644399B (zh) | 2018-12-11 |
JP2018164070A (ja) | 2018-10-18 |
TW201929150A (zh) | 2019-07-16 |
TWI771943B (zh) | 2022-07-21 |
TW202147525A (zh) | 2021-12-16 |
TWI724338B (zh) | 2021-04-11 |
CN108666323B (zh) | 2022-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108666323A (zh) | 半导体存储装置 | |
JP6495838B2 (ja) | 半導体記憶装置及びその製造方法 | |
JP6636650B2 (ja) | 残留電子をパージするためのワード線減少スキーム | |
DE112017004208B4 (de) | 3d-nand mit teilblocklöschen | |
CN104916319B (zh) | 半导体存储装置 | |
CN108475529B (zh) | 带有选择栅极晶体管的nand结构 | |
CN113113055B (zh) | 半导体存储装置 | |
KR102600997B1 (ko) | 메모리 장치 | |
CN104364849B (zh) | 减小3d nand非易失性存储器中的弱擦除型读取干扰 | |
CN103971743B (zh) | 反及闪存及其热载子生成和写入方法 | |
CN102376357B (zh) | 具有三维存储单元阵列的非易失性存储器件 | |
JP2018536959A (ja) | メモリのワード線依存チャネルのプリチャージ | |
CN105938726A (zh) | 半导体存储装置 | |
JP2018116755A (ja) | 半導体記憶装置 | |
US11404122B2 (en) | Sub-block size reduction for 3D non-volatile memory | |
CN110047536A (zh) | 非易失性半导体存储装置 | |
CN107025938A (zh) | 存储器装置 | |
TW201535683A (zh) | 非揮發性半導體記憶裝置 | |
TW201513118A (zh) | 非揮發性半導體記憶裝置 | |
CN109524043A (zh) | 半导体存储装置 | |
CN104425028A (zh) | 非易失性半导体存储装置及数据写入方法 | |
JP2022170342A (ja) | 半導体記憶装置 | |
CN107833591A (zh) | 半导体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220126 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |