CN108604502B - 用于形成CdTe薄膜太阳能电池的包括金属掺杂步骤的方法和用于执行所述金属掺杂步骤的*** - Google Patents

用于形成CdTe薄膜太阳能电池的包括金属掺杂步骤的方法和用于执行所述金属掺杂步骤的*** Download PDF

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CN108604502B
CN108604502B CN201680074171.6A CN201680074171A CN108604502B CN 108604502 B CN108604502 B CN 108604502B CN 201680074171 A CN201680074171 A CN 201680074171A CN 108604502 B CN108604502 B CN 108604502B
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solar cell
semi
cdte solar
finished
finished cdte
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CN108604502A (zh
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克里斯蒂安·德罗斯特
贝蒂娜·斯帕斯
斯文·弗劳恩施泰因
迈克尔·哈尔
彭寿
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China Triumph International Engineering Co Ltd
CTF Solar GmbH
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CTF Solar GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
CN201680074171.6A 2016-12-27 2016-12-27 用于形成CdTe薄膜太阳能电池的包括金属掺杂步骤的方法和用于执行所述金属掺杂步骤的*** Active CN108604502B (zh)

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PCT/CN2016/112433 WO2018119685A1 (en) 2016-12-27 2016-12-27 Method for forming a cdte thin film solar cell including a metal doping step and system for performing said metal doping step

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CN108604502B true CN108604502B (zh) 2021-08-03

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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
CN112490315A (zh) * 2019-09-12 2021-03-12 中国建材国际工程集团有限公司 碲化镉太阳能电池及其制备方法
CN117080080A (zh) * 2022-05-10 2023-11-17 中国建材国际工程集团有限公司 用于制造半成品CdTe基薄膜太阳能电池装置的方法
CN117080082A (zh) * 2022-05-10 2023-11-17 中国建材国际工程集团有限公司 制造半成品CdTe基薄膜太阳能电池装置的方法
WO2023236106A1 (en) * 2022-06-08 2023-12-14 China Triumph International Engineering Co., Ltd. Method for manufacturing cdte based thin film solar cell with graded refractive index profile within the cdte-based absorber layer and cdte based thin film solar cell with graded refractive index profile

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CN103811579A (zh) * 2014-02-13 2014-05-21 吉林大学 一种柔性CdTe薄膜太阳能电池及其制备方法
CN104854707A (zh) * 2013-05-29 2015-08-19 株式会社钟化 太阳能电池及其制造方法和太阳能电池模块及其制造方法
CN104854708A (zh) * 2013-05-17 2015-08-19 株式会社钟化 太阳能电池及其制造方法和太阳能电池模块
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TWI482292B (zh) * 2009-11-24 2015-04-21 Ind Tech Res Inst 量子點染料敏化太陽電池

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CN101752444A (zh) * 2008-12-17 2010-06-23 中国科学院半导体研究所 p-i-n型InGaN量子点太阳能电池结构及其制作方法
CN102723384A (zh) * 2011-03-29 2012-10-10 比亚迪股份有限公司 一种CdTe太阳能电池及其制作方法
CN102544375A (zh) * 2011-12-30 2012-07-04 中国科学院宁波材料技术与工程研究所 一种宽光谱响应的太阳能电池柔性光阳极及其制备方法
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CN103811579A (zh) * 2014-02-13 2014-05-21 吉林大学 一种柔性CdTe薄膜太阳能电池及其制备方法
CN105655131A (zh) * 2016-01-08 2016-06-08 吉林大学 一种太阳能电池Cu2S/FTO对电极及其电化学沉积制备方法

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DE112016006558T5 (de) 2018-11-29
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