CN108588673B - 一种二硫化钼薄膜的制备方法 - Google Patents
一种二硫化钼薄膜的制备方法 Download PDFInfo
- Publication number
- CN108588673B CN108588673B CN201710600863.6A CN201710600863A CN108588673B CN 108588673 B CN108588673 B CN 108588673B CN 201710600863 A CN201710600863 A CN 201710600863A CN 108588673 B CN108588673 B CN 108588673B
- Authority
- CN
- China
- Prior art keywords
- molybdenum disulfide
- preparation
- quartz
- mos
- disulfide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710600863.6A CN108588673B (zh) | 2017-07-21 | 2017-07-21 | 一种二硫化钼薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710600863.6A CN108588673B (zh) | 2017-07-21 | 2017-07-21 | 一种二硫化钼薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108588673A CN108588673A (zh) | 2018-09-28 |
CN108588673B true CN108588673B (zh) | 2019-11-12 |
Family
ID=63632973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710600863.6A Active CN108588673B (zh) | 2017-07-21 | 2017-07-21 | 一种二硫化钼薄膜的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108588673B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109487230A (zh) * | 2018-11-27 | 2019-03-19 | 河南师范大学 | 一种利用cvd制备片状硫硒锡光电极的方法 |
CN109437124B (zh) * | 2018-12-28 | 2022-03-22 | 吉林大学 | 一种合成单层过渡金属硫族化合物的方法 |
CN109487231B (zh) * | 2018-12-30 | 2023-08-22 | 金堆城钼业股份有限公司 | 一种制备三角形二硫化钼薄膜的装置及方法 |
CN110373718B (zh) * | 2019-05-30 | 2020-08-25 | 杭州电子科技大学 | 一种二维二硫化钨薄膜的制备方法 |
CN111349907B (zh) * | 2020-02-19 | 2021-08-06 | 厦门大学 | 一种MoS2/WS2垂直异质结的制备方法 |
US11519068B2 (en) | 2020-04-16 | 2022-12-06 | Honda Motor Co., Ltd. | Moisture governed growth method of atomic layer ribbons and nanoribbons of transition metal dichalcogenides |
JP2021169663A (ja) * | 2020-04-16 | 2021-10-28 | 本田技研工業株式会社 | 遷移金属ジカルコゲナイドの原子層リボンとナノリボンの水分管理(支配)下での成長方法 |
CN111826713B (zh) * | 2020-06-29 | 2022-03-15 | 南京大学 | 制备大面积过渡金属硫族化合物单晶的方法及其所得产品 |
CN112522680A (zh) * | 2020-11-10 | 2021-03-19 | 深圳大学 | 二维过渡金属硫族化合物的连续制备方法 |
CN112786751A (zh) * | 2021-01-19 | 2021-05-11 | 中国科学院长春光学精密机械与物理研究所 | 一种n极性氮化物模板、n极性氮化物器件及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105161576A (zh) * | 2015-10-20 | 2015-12-16 | 华中科技大学 | 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法 |
CN105408516A (zh) * | 2013-07-31 | 2016-03-16 | 建国大学校产学协力团 | MoS2薄膜及其制造方法 |
CN106929827A (zh) * | 2017-04-27 | 2017-07-07 | 郑州大学 | 一种少层MoS2薄膜的制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3023390B1 (en) * | 2014-11-18 | 2019-04-10 | IMEC vzw | MoS2 film formation and transfer to a substrate |
-
2017
- 2017-07-21 CN CN201710600863.6A patent/CN108588673B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105408516A (zh) * | 2013-07-31 | 2016-03-16 | 建国大学校产学协力团 | MoS2薄膜及其制造方法 |
CN105161576A (zh) * | 2015-10-20 | 2015-12-16 | 华中科技大学 | 一种基于二硫化钼的肖特基异质结太阳能电池及其制备方法 |
CN106929827A (zh) * | 2017-04-27 | 2017-07-07 | 郑州大学 | 一种少层MoS2薄膜的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108588673A (zh) | 2018-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108588673B (zh) | 一种二硫化钼薄膜的制备方法 | |
CN107557754B (zh) | 一种二硫化钨薄膜的制备方法 | |
Galazka | β-Ga2O3 for wide-bandgap electronics and optoelectronics | |
CN107785241B (zh) | 一种在硅衬底上制备β-氧化镓薄膜的方法 | |
CN106917072A (zh) | 一种使用辅助衬底大面积清洁制备单层二硫化钼薄膜的方法 | |
CN108118395A (zh) | 一种化学气相沉积制备二硒化钨单晶薄膜的方法 | |
CN113235047B (zh) | 一种AlN薄膜的制备方法 | |
CN110373718B (zh) | 一种二维二硫化钨薄膜的制备方法 | |
CN105463580A (zh) | 一种硒化镉或硫化镉二维单晶纳米片的制备方法 | |
CN104988579A (zh) | 基于蓝宝石衬底的氧化镓薄膜及其生长方法 | |
CN103964507A (zh) | 一种单层过渡金属硫属化物薄膜及其制备方法 | |
CN103305903B (zh) | 一种高氮压助熔剂-坩埚下降法制备GaN晶体的方法 | |
CN101941681B (zh) | 制备带隙单调连续变化的硫硒化镉纳米材料的方法及装置 | |
Kaneko et al. | Oriented growth of beta gallium oxide thin films on yttrium‐stabilized zirconia substrates | |
CN103400760A (zh) | 一种在硅衬底上生长硒化铋单晶薄膜的方法及装置 | |
CN105441902A (zh) | 一种外延碳化硅-石墨烯复合薄膜的制备方法 | |
Wei et al. | Monolayer MoS 2 epitaxy | |
CN104779141A (zh) | 低偏角碳化硅同质外延材料的制作方法 | |
Zhang et al. | Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method | |
CN105118853A (zh) | 基于MgO衬底的氧化镓薄膜及其生长方法 | |
CN117012622A (zh) | p型碲硒合金半导体的制备方法 | |
CN111041450A (zh) | 一种碱辅助化学气相沉积生长大面积单层二硫化钨的制备方法 | |
CN110835747A (zh) | 一种温度调控二硫化钼的形貌与缺陷的方法 | |
Shin et al. | Effects of different annealing atmospheres on the surface and microstructural properties of ZnO thin films grown on p-Si (1 0 0) substrates | |
CN109898070A (zh) | 一种二硫化钨分子层薄膜的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200820 Address after: Room 504, building 9, No. 20, kekeyuan Road, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Qibo Intellectual Property Operation Co.,Ltd. Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: HANGZHOU DIANZI University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210111 Address after: 221600 Peixian Economic Development Zone, Xuzhou City, Jiangsu Province, North of Peihe Highway and East of Hanrun Road (Science and Technology Pioneer Park) Patentee after: JIANGSU ZHONGSHANG CARBON INSTITUTE Co.,Ltd. Address before: 310018 room 504, building 9, 20 kejiyuan Road, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang Qibo Intellectual Property Operation Co.,Ltd. |
|
TR01 | Transfer of patent right |