CN108389945B - 发光元件 - Google Patents
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- CN108389945B CN108389945B CN201810153850.3A CN201810153850A CN108389945B CN 108389945 B CN108389945 B CN 108389945B CN 201810153850 A CN201810153850 A CN 201810153850A CN 108389945 B CN108389945 B CN 108389945B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000010936 titanium Substances 0.000 claims description 48
- 239000011651 chromium Substances 0.000 claims description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 229910052697 platinum Inorganic materials 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 17
- 239000010937 tungsten Substances 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 15
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 209
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
本发明公开一种发光元件,包含:一基板;一半导体叠层包含一第一半导体层在基板上,一主动层在第一半导体层上,以及一第二半导体层在主动层上;以及一电极结构在第二半导体层上,其中电极结构包含一打线层,一传导层以及一第一阻障层位于打线层及传导层之间,其中,传导层的标准氧化电位高于打线层的标准氧化电位。
Description
本发明是中国发明专利申请(申请号:201310534722.0,申请日:2013年11月1日,发明名称:发光元件)的分案申请。
技术领域
本发明涉及具有较佳的电极结构的发光元件用以提升发光元件的可靠度。
背景技术
当发光效率提升且制造成本降低后,以固态照明取代传统照明的梦想预期不久即将实现。现阶段发光二极管的内部发光效率约为50%到80%之间,但是部分的光发出后被电极及发光层吸收,导致总体出光效率降低。因此,衍生出在电极下设置反射层来解决这个问题。当从发光层发出的光线行经的路径被电极挡住的时候,反射层可反射而非吸收光线。另外,电极具有一打线垫用以后续的封装打线用,打线垫通常由金所制成。由于金的价格很高,导致电极的成本增加。
发明内容
为解决上述问题,本发明提供一发光元件,包含:一基板;一半导体叠层包含一第一半导体层在基板上,一主动层在第一半导体层上,以及一第二半导体层在主动层上;以及一电极结构在第二半导体层上,其中电极结构包含一打线层,一传导层以及一第一阻障层位于打线层及传导层之间,其中,传导层的标准氧化电位高于打线层的标准氧化电位。
附图说明
图1A是显示本发明一水平式发光元件的示意图;
图1B是显示本发明一垂直式发光元件的示意图;
图2是显示根据本发明第一实施例的电极结构的示意图;
图3A是显示根据本发明第二实施例的电极结构的示意图;
图3B是显示本发明电极结构8的详细结构的扫描电子显微镜(SEM)图;
图4是显示根据本发明第三实施例的电极结构。
符号说明
1 | 水平式发光元件 | 72 | 反射层 |
10 | 基板 | 73 | 粘着层 |
11 | 第一半导体层 | 74 | 第二阻障层 |
12 | 主动层 | 75 | 第一阻障层 |
13 | 第二半导体层 | 76 | 传导层 |
14 | 透明导电氧化层 | 761 | 第一传导层 |
S1 | 表面 | 762 | 第二传导层 |
S2 | 表面 | 763 | 第三传导层 |
2 | 垂直式发光元件 | 77 | 第一隔绝层 |
21 | 导电基板 | 78 | 第二隔绝层 |
61 | 第一电极 | 8 | 电极结构 |
62 | 第二电极 | 9 | 电极结构 |
63 | 第三电极 | A | 边界区 |
7 | 电极结构 | B | 边界区 |
71 | 打线层 | C | 中央区 |
具体实施方式
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附附图作详细说明如下。在附图或说明中,相似或相同的部分是使用相同的标号,并且在附图中,元件的形状或厚度可扩大或缩小。需特别注意的是,图中未绘示或描述的元件,可以是熟习此技术的人士所知的形式。
图1A是显示一水平式发光元件1包含一基板10;一第一半导体层11具有一第一极性,例如n型氮化镓(GaN)层,在基板10上;一主动层12具有一结构,例如以氮化铟镓(InGaN)为基础的多重量子井(MQW)结构,在第一半导体层11上;一第二半导体层13具有一第二极性,例如p型半导体层,在主动层12上;一透明导电氧化层14包含一第一金属材料,例如氧化铟锡(ITO),位于第二半导体层13上;第一半导体层11露出表面S2未被主动层12及第二半导体层13覆盖;一第一电极61位于表面S2上;一第二电极62位于透明导电氧化层14的表面S1上。基板10可为一绝缘基板,例如蓝宝石基板。
图1B是本发明另一实施例的一垂直式发光元件2。发光元件2包含一导电基板21,设置一第三电极63及第二电极62在导电基板21的相对两侧。导电基板21包含一导电材料,例如铜(Cu)、铝(Al)、铟(In)、锡(Sn)、锌(Zn)、钨(W)或其组合,或半导体材料,例如硅(Si)、碳化硅(SiC)、氮化镓(GaN)、砷化镓(GaAs)等。
第一半导体层11、主动层12以及第二半导体层13的材料包含Ⅲ-Ⅴ族化合物半导体,例如磷化镓(GaP)、砷化镓(GaAs)或者氮化镓(GaN)。第一半导体层11、主动层12以及第二半导体层13可使用现有的外延方法制造,例如有机金属化学气相沉积法(MOCVD)、分子束沉积法(MBE)或者氢化物气相沉积法(HVPE)。
透明导电氧化层14的材料包含透明导电氧化材料,例如氧化铟锡(ITO)、镉锡氧化物(CTO)、锑氧化锡、氧化铟锌、氧化锌铝、氧化锌或锌锡氧化物。透明导电氧化层14以一预定的厚度形成,例如小于3000埃可通过蒸镀沉积的方法,于接近室温,氮气环境及压力在1×10-4托(Torr)及1×10-2托(Torr)之间,较佳为接近5×10-3托(Torr)的腔体环境下。
第一实施例
图2是显示一电极结构7,电极结构7为根据第一实施例的第一电极61、第二电极62及第三电极63的详细结构。电极结构7包含一打线层71用以接合打线,一传导层76位于打线层71之下,一反射层72位于传导层76之下用以反射从主动层12所发出的光线,一粘着层73用以增加反射层72与透明导电氧化层14或者第一半导体层11之间的粘着力,一第二阻障层74位于传导层76与反射层72之间,用以将传导层76与反射层72区隔开避免相互接触,以及一第一阻障层75位于打线层71及传导层76之间,用以将传导层76及打线层71区隔开避免相互接触。
打线层71包含一第一金属,例如金(Au)。打线层71的厚度介于之间,较佳的是介于之间。传导层76包含一第二金属不同于第一金属,第二金属可为铝(Al)、银(Ag)或铜(Cu)。第二金属的导电率与第一金属的导电率的比值为介于0.1~10之间。第一金属的化学性质比第二金属的化学性质稳定,或者是说第二金属的标准氧化电位比第一金属的标准氧化电位高。传导层76的厚度与打线层71的厚度的比值介于0.1~10之间。传导层76的厚度是依流经电极结构7的驱动电流值来决定。当打线层71的导电率小于传导层76的导电率时,以低至中驱动电流注入电极结构7,例如120mA~300mA的驱动电流,传导层76的厚度与电极结构7的总厚度具有一第一比值介于0.3~0.5之间。传导层76与打线层71的加总厚度为电极结构7的总厚度的0.4~0.7倍。当打线层71的导电率小于传导层76的导电率时,以高驱动电流注入电极结构7,例如350mA~1000mA的驱动电流,传导层76的厚度与电极结构7的总厚度具有一第二比值介于0.5~0.8之间,且第二比值大于第一比值。传导层76与打线层71的总厚度约为电极结构7的总厚度的0.6~0.9倍。当打线层71的导电率大于传导层76的导电率时,以低至中驱动电流注入电极结构7,例如120mA~300mA的驱动电流,传导层76的厚度与电极结构7的总厚度具有一第三比值介于0.4~0.7之间,或者传导层76与打线层71的总厚度约为电极结构7的总厚度的0.5~0.8倍。当打线层71的导电率大于传导层76的导电率的时候,以高驱动电流注入电极结构7,例如350mA~1000mA的驱动电流,传导层76的厚度与电极结构7的总厚度具有一第四比值大于第三比值,介于0.55~0.85之间。传导层76与打线层71的总厚度约为电极结构7的总厚度的0.75~0.95倍。反射层72包含对于主动层12发出的光反射率大于80%的金属,例如铝(Al)或银(Ag)。反射层72的厚度较佳的是介于之间。
第二阻障层74用来将反射层72及传导层76区隔开,以避免传导层76及反射层72的材料在两者之间交互扩散,同时第二阻障层74在传导层76及反射层72之间可形成低接触电阻并增加粘着力。第二阻障层74包含一第三金属层及一第四金属层位于第三金属层上,其中第四金属层包含的材料与第三金属层相异。在另一实施例中,第二阻障层74包含多个第三金属层以及多个第四金属层互相交叠,例如钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)或者钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)。第三金属层较佳的是比第四金属层厚1倍到3倍。第三金属层的厚度介于之间,第四金属层的厚度介于之间。第三金属层与第四金属层各包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。因此,第二阻障层74包含至少两种材料选自铬(Cr)/铂(Pt)、铬(Cr)/钛(Ti)、铬(Cr)/钛钨(TiW)、铬(Cr)/钨(W)、铬(Cr)/锌(Zn)、钛(Ti)/铂(Pt)、钛(Ti)/钨(W)、钛(Ti)/钛钨(TiW)、钛(Ti)/钨(W)、钛(Ti)/锌(Zn)、铂(Pt)/钛钨(TiW)、铂(Pt)/钨(W)、铂(Pt)/锌(Zn)、钛钨(TiW)/钨(W)、钛钨(TiW)/锌(Zn)及钨(W)/锌(Zn)的群组。第一阻障层75用来将打线层71及传导层76区隔开,以避免传导层76及打线层71的材料在两者之间交互扩散,同时第一阻障层75在传导层76及打线层71之间可形成低接触电阻并增加粘着力。第一阻障层75包含一第一金属层及一第二金属层位于第一金属层上,其中第一金属层包含的材料与第二金属层相异。在另一实施例中,第一阻障层75包含多个第一金属层以及多个第二金属层互相交叠,例如钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)或者钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)/钛(Ti)/铂(Pt)。第一金属层较佳的是比第二金属层厚1倍到3倍。第一金属层的厚度介于之间,第二金属层的厚度介于之间。第一金属层与第二金属层各包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。因此,第一阻障层75包含至少两种材料选自铬(Cr)/铂(Pt)、铬(Cr)/钛(Ti)、铬(Cr)/钛钨(TiW)、铬(Cr)/钨(W)、铬(Cr)/锌(Zn)、钛(Ti)/铂(Pt)、钛(Ti)/钨(W)、钛(Ti)/钛钨(TiW)、钛(Ti)/钨(W)、钛(Ti)/锌(Zn)、铂(Pt)/钛钨(TiW)、铂(Pt)/钨(W)、铂(Pt)/锌(Zn)、钛钨(TiW)/钨(W)、钛钨(TiW)/锌(Zn)及钨(W)/锌(Zn)的群组。粘着层73用以提升反射层72与透明导电氧化层14或第一半导体层11之间的粘着力。粘着层73较佳的包含铬(Cr)或铑(Rh)。粘着层73的厚度较佳的是介于之间,使得粘着层73薄得足以让主动层12发出的光线穿透。
对于反射层72、第二阻障层74、传导层76、第一阻障层75以及打线层71,每一层的厚度在边界区A或B小于在中央区C。电极结构7的形状近似于梯形,或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
第二实施例
图3A是显示根据第二实施例的一电极结构8的第一电极61、第二电极62及第三电极63的详细结构。图3B是显示电极结构8的详细结构的扫描电子显微镜(SEM)图。图3A的电极结构8与图2的电极结构7的差异在于电极结构7的传导层76分成第一传导层761及第二传导层762两部分,一第一隔绝层77位于第一传导层761及第二传导层762之间,当高驱动电流注入电极结构8的时候,以降低电子迁移效应造成第一传导层761及第二传导层762向外扩散至打线层71或者反射层72的情形。第一传导层761以及第二传导层762实质上包含相同的材料,第一传导层761的厚度与第二传导层762的厚度相同或为相同的数量级。第一隔绝层77包含一材料相异于第一传导层761以及第二传导层762的材料。第一隔绝层77包含单一金属层选自一群组包括铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)以及锌(Zn)。
对于反射层72、第二阻障层74、第一传导层761、第一隔绝层77、第二传导层762、第一阻障层75以及打线层71,每一层的厚度在边界区A或B小于在中央区C。电极结构8的形状近似于梯形,或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
第三实施例
图4是显示根据第三实施例的一电极结构9的第一电极结构61、第二电极62及第三电极63的详细结构。图4的电极结构9与图2的电极结构7的差异在于电极结构7的传导层76分成三部分,第一传导层761、第二传导层762以及一第三传导层763,第二传导层762以及第三传导层763之间以一第二隔绝层78区隔开。第一传导层761、第二传导层762以及第三传导层763的厚度大约相同或者位于相同的数量级。第二隔绝层78包含与第一隔绝层77相同的材料。
对于反射层72、第二阻障层74、第一传导层761、第一隔绝层77、第二传导层762、第二隔绝层78、第三传导层763、第一阻障层75以及打线层71,每一层的厚度在边界区A或B小于在中央区C。电极结构9的形状近似于梯形,或者较佳的是一非对称的梯型具有两相对、不同斜率的斜边。
可理解的是,对于熟悉此项技术者,不同修饰或变更皆可应用于本发明中且不脱离本发明的精神与范围。前述的描述,目的在于涵盖本发明的修饰或变更的公开皆落于本发明的专利范围内且与其均等。
Claims (9)
1.一种发光元件,其特征在于,包含:
基板;
半导体叠层,包含第一半导体层在该基板上,主动层在该第一半导体层上,以及第二半导体层在该主动层上;以及
电极结构,在该第二半导体层上,其中该电极结构包含打线层,传导层以及第一阻障层位于该打线层及该传导层之间,
其中,该打线层的导电率大于该传导层的导电率,
其中,该传导层与该打线层的总厚度为该电极结构的总厚度的0.75~0.95倍,
其中该传导层包含第一传导层、第二传导层以及第一隔绝层位于该第一传导层及该第二传导层之间,该第一传导层以及该第二传导层包含相同的材料,该第一隔绝层包含一材料相异于该第一传导层以及该第二传导层的材料。
2.一种发光元件,其特征在于,包含:
基板;
半导体叠层,包含第一半导体层在该基板上,主动层在该第一半导体层上,以及第二半导体层在该主动层上;以及
电极结构,在该第二半导体层上,其中该电极结构包含打线层,传导层以及第一阻障层位于该打线层及该传导层之间,
其中,该打线层的导电率小于该传导层的导电率,
其中,该传导层与该打线层的总厚度为该电极结构的总厚度的0.6~0.9倍,
其中该传导层包含第一传导层、第二传导层以及第一隔绝层位于该第一传导层及该第二传导层之间,该第一传导层以及该第二传导层包含相同的材料,该第一隔绝层包含一材料相异于该第一传导层以及该第二传导层的材料。
3.如权利要求1或权利要求2所述的发光元件,其中该第一阻障层包含第一金属层以及第二金属层,该第一金属层包含的材料与该第二金属层相异,该第一金属层或该第二金属层包含一材料选自铬(Cr)、铂(Pt)、钛(Ti)、钛钨(TiW)、钨(W)及锌(Zn)的群组。
5.如权利要求1或权利要求2所述的发光元件,其中该电极结构以350mA~1000mA的驱动电流注入。
6.如权利要求1或权利要求2所述的发光元件,其中该电极结构还包含粘着层,该粘着层为该电极结构中最接近该半导体叠层,其中该粘着层包含铬(Cr)或铑(Rh),该传导层包含银(Ag)、铝(Al)或铜(Cu)。
7.如权利要求1或权利要求2所述的发光元件,其中该电极结构还包含反射层,该反射层位于该传导层之下,该反射层包含铝(Al)或银(Ag)。
8.如权利要求1或权利要求2所述的发光元件,其中该第一阻障层包含第一金属层以及第二金属层,该第一金属层比该第二金属层厚1倍到3倍。
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