CN108389899A - RC-IGBT devices and its process - Google Patents
RC-IGBT devices and its process Download PDFInfo
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- CN108389899A CN108389899A CN201810110324.9A CN201810110324A CN108389899A CN 108389899 A CN108389899 A CN 108389899A CN 201810110324 A CN201810110324 A CN 201810110324A CN 108389899 A CN108389899 A CN 108389899A
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- 238000000034 method Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims abstract description 63
- 239000000725 suspension Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000002344 surface layer Substances 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
The invention discloses a kind of RC IGBT devices, there is gate trench and body area in substrate face, also there is the first heavily doped P-type area and the first heavily doped N-type area in body area, substrate surface has the emitter that inter-level dielectric and metal are drawn, once there is N-type buffer layer and the second heavily doped P-type area from inside to outside on substrate back surface layer, also there is the second heavily doped N-type area, second heavily doped P-type area to be located at same layer with the second heavily doped N-type area, substrate surface covers back metal and forms collector；In the N-type buffer layer, also there are multiple p-type suspension implanted layers.RC IGBT devices of the present invention, multiple p-type suspension implanted layers are introduced by interior in N-type buffer layer, the current path that the second heavily doped region is collected by collector is flowed through after limitation grid groove conducting, so that more electronic currents flow through the top of the second heavily doped region, to when make RC IGBT in advance enter bipolar conduction pattern, reduce or avoid RC IGBT occur snap back phenomenons.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly relate to a kind of RC-IGBT devices.
Background technology
IGBT (Insulated Gate Bipolar Transistor) insulated gate bipolar transistor, is (double by BJT
Polar form triode) and MOS (insulating gate type field effect tube) composition compound full-control type voltage driven type power semiconductor,
Though switching speed is low compared with power MOS, it is far above BJT, and because being voltage control device, control circuit is simple, stability is good, simultaneous
There is advantage of both the high input impedance of MOSFET and the low conduction voltage drop of GTR.
Usually in the application of IGBT products, FRD (fast recovery diode) product for the dimension in parallel that needs to arrange in pairs or groups
Current drain circuit when as shutdown, protects igbt chip.For reduce device manufacture and packaging cost, can by IGBT with
FRD is integrated in the same chip, i.e. RC-IGBT.
EMI (Electromagnetic Interference) electromagnetic interference, RC-IGBT devices itself, which need to have, to be reduced
The ability of EMI in application circuit, could in terminating circuit normal use.
As shown in Figures 1 and 2 is a kind of traditional RC-IGBT devices, and wherein Fig. 1 is using repetition primitive cell structure, Fig. 2
It is to use dummy structures, illustrates by taking N-type RC-IGBT as an example, p-type is equally applicable.Positive technique is consistent with tradition IGBT techniques,
By increasing by a step back side photoetching at the back sides IGBT, injection forms the regions N+, reaches and diode is integrated into inside IGBT device
Purpose.RC-IGBT may be implemented to replace IGBT and fly-wheel diode and company with individual devices, apply in power converter,
Reach the influence for reducing loss and reducing encapsulation parasitic parameter.As shown in Figure 2, grid adds forward bias, after raceway groove conducting, electricity
Son will by emitter N+ through raceway groove, the areas N- (i.e. 1st area), finally flow through the areas A by collector N+ (i.e. the second heavily doped N-type area 5) receive
Collection.At this point, device attribute is equal to unipolar device；When the voltage at the both ends Vce increases to certain value VSB(snap-back
Voltage after), the areas P+ (i.e. the second heavily doped P-type area 3) is connected with buffer floor at collector, and device enters bipolar conduction mould
Formula, conducting resistance decline, and Vce declines, and form the distinctive snap-back phenomenons of RC-IGBT.
Invention content
Technical problem to be solved by the present invention lies in a kind of RC-IGBT devices are provided, the snap-back for improving device is existing
As optimizing the on-state characteristic of RC-IGBT.
To solve the above problems, a kind of RC-IGBT devices of the present invention, including：There is grid ditch in substrate face
The areas Cao Jiti, also have the first heavily doped P-type area and the first heavily doped N-type area in body area, substrate surface have inter-level dielectric and
The emitter that metal is drawn once has N-type buffer layer and the second heavily doped P-type area, also from inside to outside on substrate back surface layer
With the second heavily doped N-type area, second heavily doped P-type area and the second heavily doped N-type area are located at same layer, and substrate surface covers
Lid back metal forms collector；
In the N-type buffer layer, also there are multiple p-type suspension implanted layers.
Further, multiple p-type suspension implanted layers, wherein the p-type of the top in the second heavily doped N-type area suspends
Implanted layer length is identical as the second heavily doped N-type section length；Multiple p-type suspension implanted layers above second heavily doped P-type area are
It is multiple to be alternatively arranged.
Further, multiple p-type suspension implanted layers in the N-type buffer layer above second heavily doped P-type area, are not
Equidistant arrangement, closer to the second heavily doped N-type section away from smaller, further away from the second heavily doped N-type section away from bigger；But each P
The length of type suspension implanted layer is identical.
Further, the second heavily doped n-type region is flowed through after the p-type suspension implanted layer limitation grid groove conducting to be collected
The current path that electrode is collected so that more electronic currents flow through the top in the second heavily doped P-type region, and it is heavily doped to be conducive to second
The conducting of PN junction between miscellaneous p type island region and N-type buffer layer, to when make RC-IGBT in advance enter bipolar conduction pattern.
Further, the spacing by reasonably adjusting p-type suspension implanted layer changes, and reduces or avoid RC-IGBT
Snap-back phenomenons occur.
RC-IGBT devices of the present invention introduce multiple p-type suspension implanted layers, limitation by interior in N-type buffer layer
The current path that the second heavily doped region is collected by collector is flowed through after grid groove conducting so that more electronic currents flow through the
The top of two heavily doped regions is conducive to the conducting of PN junction between the second heavily doped region and N-type buffer layer.To when make RC-IGBT
Enter bipolar conduction pattern in advance, the spacing by reasonably adjusting p-type superposed layer changes, and reduces or avoid RC-IGBT
Snap-back phenomenons.
Description of the drawings
Fig. 1 is traditional RC-IGBT device structure schematic diagram, is using the RC-IGBT for repeating structure cell.
Fig. 2 is traditional RC-IGBT device structure schematic diagram, is the RC-IGBT using dummy structures.
Fig. 3 is RC-IGBT device structure schematic diagram of the present invention, and multiple p-type suspension implanted layers are introduced in N-type buffer layer.
Fig. 4 is the partial enlarged view of N-type buffer layer in RC-IGBT devices of the present invention.
Fig. 5 is the current path schematic diagram of RC-IGBT devices of the present invention.
Reference sign
1 is lightly doped n-type region, and 2 be N-type buffer layer, and 3 be the second heavily doped P-type area, and 4 be rear-face contact metal (current collection
Pole), 5 be the second heavily doped N-type area, and 6 be grid, and 7 be body area, and 8 be dielectric layer, and 9 be the first heavily doped P-type area, and 10 be front
Metal (emitter), 11 be the first heavily doped N-type area, and 12 be p-type suspension implanted layer.
Specific implementation mode
RC-IGBT devices of the present invention, as shown in Figure 3：There is gate trench 6 and body area 7, body area in substrate face
7 also there is the first heavily doped P-type area 9 and the first heavily doped N-type area 11, substrate surface there is inter-level dielectric 8 and metal to draw
Emitter 10 once has N-type buffer layer 2 and the second heavily doped P-type area 3 on substrate back surface layer, also has the from inside to outside
Two heavily doped N-type areas 5, second heavily doped P-type area 3 and the second heavily doped N-type area 5 are located at same layer, substrate surface covering
Back metal forms collector 4.
In the N-type buffer layer, also there are multiple p-type suspension implanted layers 12.
Multiple p-type suspension implanted layers, wherein the p-type suspension implanted layer length of the top in the second heavily doped N-type area
It is identical as the second heavily doped N-type section length；Multiple p-type suspension implanted layers above second heavily doped P-type area are multiple interval rows
Row.Multiple p-type suspension implanted layers in N-type buffer layer above second heavily doped P-type area are Unequal distance arrangements, more lean on
Nearly second heavily doped N-type section is away from smaller, further away from the second heavily doped N-type section away from bigger；But each p-type suspension implanted layer
Length is identical.
Specifically, as shown in figure 4, being the close-up schematic view of N-type buffer layer in Fig. 3, Lf1 is the second heavy doping N
The length of the p-type suspension implanted layer of 5 top of type area, i.e. Lf1=Ln, Lp identical as the length Ln in the second heavily doped N-type area 5
It is the length in the second heavily doped P-type area, Lf2 is the length of the p-type suspension implanted layer of 3 top of the second p-type injection region, more regions
The length Lf2 all sames of all p-type suspension implanted layers, the nearest p-type suspension implanted layer close to the second heavily doped N-type area 5
Spacing Ls1 it is minimum, the spacing further away from the second heavily doped N-type area 5 is bigger, i.e. Ls1<Ls2<Ls3<…….P-type, which suspends, to be injected
Layer is exactly discontinuous, has the p-type of spacing to inject, and can be bar shaped, or the shape of hole etc.Generally use high energy
Injection, by taking N-type buffer layer injection depth is 4 microns as an example, the depth of p-type suspension implanted layer is at 1~1.5 micron.
As shown in figure 5, flowing through the second heavily doped n-type region by current collection after the limitation grid groove conducting of p-type suspension implanted layer
The current path that pole is collected so that more electronic currents flow through the top in the second heavily doped P-type region, are conducive to the second heavy doping
The conducting of PN junction between p type island region and N-type buffer layer, to when make RC-IGBT in advance enter bipolar conduction pattern.By rational
The spacing variation for adjusting p-type suspension implanted layer, reduces or avoids RC-IGBT that snap-back phenomenons occur.
It these are only the preferred embodiment of the present invention, be not intended to limit the present invention.Those skilled in the art is come
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any modification made by is equal
Replace, improve etc., it should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of RC-IGBT devices have gate trench and body area in substrate face, also have the first heavily doped P-type in body area
Area and the first heavily doped N-type area, substrate surface have the emitter that inter-level dielectric and metal are drawn, on substrate back surface layer from interior
Once there is N-type buffer layer and the second heavily doped P-type area outward, also there is the second heavily doped N-type area, the second heavy doping P
Type area is located at same layer with the second heavily doped N-type area, and substrate surface covers back metal and forms collector；It is characterized in that：
In the N-type buffer layer, also there are multiple p-type suspension implanted layers.
2. RC-IGBT devices as described in claim 1, it is characterised in that：Multiple p-type suspension implanted layers, wherein the
The p-type suspension implanted layer length of the top in two heavily doped N-type areas is identical as the second heavily doped N-type section length；Second heavily doped P-type
Multiple p-type suspension implanted layers above area are multiple are alternatively arranged.
3. the process of manufacture RC-IGBT devices as claimed in claim 2, it is characterised in that：Second heavily doped P-type
Multiple p-type suspension implanted layers in N-type buffer layer above area, be Unequal distance arrangement, closer to the second heavily doped N-type section away from
It is smaller, further away from the second heavily doped N-type section away from bigger；But the length of each p-type suspension implanted layer is identical.
4. the process of RC-IGBT devices as described in claim 1, it is characterised in that：The p-type suspension implanted layer limitation
The current path that the second heavily doped n-type region is collected by collector is flowed through after grid groove conducting so that more electronic currents
The top in the second heavily doped P-type region is flowed through, the conducting of PN junction between the second heavily doped P-type area and N-type buffer layer is conducive to, to
When make RC-IGBT in advance enter bipolar conduction pattern.
5. the process of RC-IGBT devices as claimed in claim 3, it is characterised in that：It is described by reasonably adjusting p-type
The spacing of suspension implanted layer changes, and reduces or avoids RC-IGBT that snap-back phenomenons occur.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810110324.9A CN108389899A (en) | 2018-02-05 | 2018-02-05 | RC-IGBT devices and its process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810110324.9A CN108389899A (en) | 2018-02-05 | 2018-02-05 | RC-IGBT devices and its process |
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| Publication Number | Publication Date |
|---|---|
| CN108389899A true CN108389899A (en) | 2018-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810110324.9A Pending CN108389899A (en) | 2018-02-05 | 2018-02-05 | RC-IGBT devices and its process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504307A (en) * | 2019-08-28 | 2019-11-26 | 重庆邮电大学 | A kind of SA-LIGBT device with grid-control collector |
| CN110571264A (en) * | 2019-09-17 | 2019-12-13 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070158680A1 (en) * | 2006-01-10 | 2007-07-12 | Denso Corporation | Semiconductor device having IGBT and diode |
| CN103311287A (en) * | 2013-03-11 | 2013-09-18 | 电子科技大学 | RC-IGBT (Reverse-Conducting Insulated-Gate Bipolar Transistor) provided with series P floating buried layer |
-
2018
- 2018-02-05 CN CN201810110324.9A patent/CN108389899A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070158680A1 (en) * | 2006-01-10 | 2007-07-12 | Denso Corporation | Semiconductor device having IGBT and diode |
| CN103311287A (en) * | 2013-03-11 | 2013-09-18 | 电子科技大学 | RC-IGBT (Reverse-Conducting Insulated-Gate Bipolar Transistor) provided with series P floating buried layer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504307A (en) * | 2019-08-28 | 2019-11-26 | 重庆邮电大学 | A kind of SA-LIGBT device with grid-control collector |
| CN110504307B (en) * | 2019-08-28 | 2023-03-14 | 重庆邮电大学 | SA-LIGBT device with grid-controlled collector |
| CN110571264A (en) * | 2019-09-17 | 2019-12-13 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
| CN110571264B (en) * | 2019-09-17 | 2023-03-24 | 重庆邮电大学 | SA-LIGBT device with multichannel current bolt |
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Application publication date: 20180810 |