CN110504307B - SA-LIGBT device with grid-controlled collector - Google Patents
SA-LIGBT device with grid-controlled collector Download PDFInfo
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Abstract
The invention relates to an SA-LIGBT device with a grid-control collector electrode, and belongs to the field of electronic devices. The device comprises an emitter, a grid, an N-type drift region and a grid-controlled collector region from left to right. The grid control collector region comprises an N-buffer I buffer layer, a P-collector, an N-buffer II buffer layer, a P-type electron blocking layer P-base and an N-collector from left to right. And a transverse groove-shaped gate is arranged below the P-type electron blocking layer P-base and the N-collector. When the collector is conducted in the forward direction, the P-type electron blocking layer P-base can block electrons from flowing to the N-collector, and the short-circuit resistance of the collector is increased. By adjusting the length and concentration of the P-type electron blocking layer P-base, the short-circuit resistance of the collector can be adjusted, and the snapback effect is eliminated. When the device is turned off, the P-type electron blocking layer is inverted into an N type under the grid control voltage to form an electron channel, so that the carrier extraction efficiency is improved, and the turn-off time of the device is effectively reduced.
Description
Technical Field
The invention belongs to the field of electronic devices, and relates to an SA-LIGBT device with a grid-controlled collector.
Background
An IGBT (Insulated Gate Bipolar Transistor) is commonly referred to as a "CPU" of a power electronic device, and is a core device of an electronic power system. LIGBT (lateral insulated gate bipolar transistor) is easy to integrate, is commonly applied to power intelligent systems, and is a typical representative of bipolar devices. The LIGBT has two carriers of electrons and holes to conduct when conducting, so that the LIGBT has extremely low conducting voltage drop. However, the large number of carriers stored in the drift region causes a tailing current phenomenon in the transistor when the transistor is turned off, and causes a large turn-off loss in the transistor.
In order to solve the problems of large turn-off loss and long turn-off time of the LIGBT, some people replace part of P-collector of the anode of the LIGBT with N-collector, and provide SA-LIGBT (short anode insulated gate bipolar transistor), which can provide an extraction channel for electrons when the device is turned off, thereby effectively reducing the turn-off time of the transistor. However, the introduction of the N-collector also causes a snapback phenomenon, that is, at the initial stage of forward conduction of the transistor, electrons flow to the N-collector with a low barrier first, and at this time, the transistor works in a unipolar conduction mode; as the voltage of the collector increases, the voltage drop V between the PN junction formed by the P-collector and the N-buffer PN When the voltage is larger than 0.7V, the PN junction is conducted, the P-collector injects holes into the drift region, a conductivity modulation effect occurs, and the transistor enters a bipolar conductivity mode. In the process of converting from the unipolar conduction mode to the bipolar conduction mode, an obvious rebound phenomenon occurs to the voltage, so that the current distribution is uneven, and the working reliability of the device is seriously influenced.
In order to eliminate the snapback effect of the traditional SA-LIGBT and ensure the turn-off capability of the traditional SA-LIGBT, the SA-LIGBT needs to be further improved.
Disclosure of Invention
In view of the above, the present invention is directed to an SA-LIGBT device with a gated collector.
In order to achieve the purpose, the invention provides the following technical scheme:
an SA-LIGBT device with a grid-controlled collector comprises an emitter 1, an N + electron emitter 2, a grid 3, a gate oxide layer 4, a P-body5, an N-type drift region 6, an N-buffer I7, a P-collector9, a collector I8, an N-buffer II 10, a P-electron blocking layer P-base11 and an N-buffer II 10 which are arranged from left to rightCollector12, collector II 16; below are an N-type drift region 6, a dielectric isolation layer 14 and a P-type substrate 15. SiO is arranged right below the P-type electron blocking layers P-base11 and the N-collector12 2 An insulating layer 13 and a gated collector 17.
The collector I8 and the collector II 16 are respectively positioned right above the P-collector9 and the N-collector12, and the grid-control collector 17 is positioned right below the P-type electron blocking layer P-base11 and the N-collector 12. SiO is arranged between the grid control collector electrode 17 and the P-collector9 and the N-collector12 2 And an insulating layer 13. SiO is arranged between the grid control collector electrode 17 and the drift region 6 2 The insulating layer 13 isolates. The collector i 8, the collector ii 16 and the gated collector 17 are applied with exactly the same voltage in use.
Compared with the traditional SA-LIGBT, the invention has the advantages that the control gate is introduced into the collector. When conducting in the forward direction, the emitter of the transistor is grounded, a positive voltage of 15V is applied to the gate, and a gradually increasing positive voltage is applied to the collector. Initially, only electrons flow from the N + electron emitter to the N-collector through the channel, and the P-type electron blocking layer above the gated collector, which is a barrier height for electrons, blocks the flow of electrons to the N-collector, so that the resistance of this region increases. And the snapback model formula of SA-LIGBT can be represented by the following formula:
wherein, V SB In order to generate a flyback voltage R d And R ch Respectively drift region resistance and channel resistance, R, of the transistor sa Is a collector shorting resistor. In the process, the P-type electron blocking layer P-base has the function of blocking electrons, so that the collector short-circuit resistance R sa Increase to reduce the retrace voltage V SB And the purpose of suppressing snpback is achieved.
For the turn-off characteristics of the transistor, the present invention utilizes a test circuit (circuit configuration shown in fig. 11) to model the turn-off of the transistor. Firstly, grounding an emitter of the transistor, connecting a collector with a direct current voltage slightly lower than the breakdown voltage of the transistor, and then applying an alternating current voltage with the variation range of-5V to 15V on a grid. When the grid voltage is 15V, the transistor works in a forward conduction mode, and more electrons and holes exist inside the transistor. Meanwhile, the grid control collector electrode is connected with higher voltage, electrons in the P-type electron blocking layer P-base can be attracted to one side close to the grid control collector electrode, so that the P-base is inverted, and an electron channel communicated with the N-buffer and the N-collector is formed. When the gate voltage becomes-5V, the transistor is turned off, and electrons in the drift region can be rapidly absorbed by the N-collector through the above-mentioned electron channel. The conventional LIGBT does not have an N-collector, and only consumes a large number of carriers in a drift region by virtue of the recombination action of electrons and holes, so that the turn-off time is long. According to the invention, by utilizing the grid control principle of an MOS device, on the premise of not additionally increasing a control end, a grid control collector is introduced into a collector region, so that the snapback phenomenon brought by the traditional SA-LIGBT device is perfectly solved, and the turn-off speed of a transistor can be effectively accelerated by an electronic channel formed by the grid control collector during turn-off. When in use, the on-off performance of the transistor can be effectively controlled by only adjusting the length and the concentration of the P-base.
The invention has the beneficial effects that:
(1) When the current collector is conducted in the forward direction, the concentration and the length of the P-type electron blocking layer P-base are adjusted, so that the short-circuit resistance of the collector can be effectively controlled, and the snapback effect of the traditional SA-LIGBT is eliminated.
(2) When the transistor is turned off, the positive voltage applied to the grid-control collector electrode can make the P-type electron barrier layer inverted to form an electron channel, so that the extraction speed of electrons is increased, and the turn-off time of the transistor is shortened.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a conventional SA-LIGBT architecture;
FIG. 2 is a schematic diagram of a conventional LIGBT structure;
FIG. 3 is a SA-LIGBT (New Structure SA-LIGBT) with grid-controlled collector according to the present invention;
FIG. 4 is an equivalent circuit diagram of the new architecture SA-LIGBT;
FIG. 5 is a schematic current diagram of the new structure SA-LIGBT in a forward conducting state; FIG. 5 (a) is a schematic diagram of current flow in the unipolar conduction mode, and FIG. 5 (b) is a schematic diagram of current flow in the bipolar conduction mode;
FIG. 6 shows that the conventional SA-LIGBT and P-base concentrations are 3X 10 respectively when the substrate is turned on in the forward direction 15 cm -3 、5×10 15 cm -3 、7×10 15 cm -3 、9×10 15 cm -3 The current-voltage curve diagram of the new structure SA-LIGBT is shown;
FIG. 7 shows that the length ratio of P-base to N-collector is 0: 2. 0.5:1.5, 0.7:1.3 and 1:1, a forward conducting current-voltage curve chart of the new structure SA-LIGBT;
FIG. 8 (a) is a lateral concentration distribution diagram of electrons in the range of y =0.3 μm,14.5 μm ≦ x ≦ 15.5 μm when the new structure SA-LIGBT is turned on in the forward direction; FIG. 8 (b) shows the specific location of y =0.3 μm,14.5 μm ≦ x ≦ 15.5 μm in the transistor;
FIG. 9 (a) is a longitudinal concentration distribution diagram of electrons in the range of x =15.5 μm,0 μm ≦ y ≦ 0.6 μm when the new structure SA-LIGBT is turned on in the forward direction; FIG. 9 (b) is x =15.5 μm,0 μm ≦ y ≦ 0.6 μm at a specific location in the transistor;
FIG. 10 is a schematic diagram of the current flow when the new structure SA-LIGBT is turned off;
FIG. 11 is a schematic diagram of a test circuit for testing the turn-off time of a transistor;
FIG. 12 (a) is a lateral distribution plot of electron concentration of the new structure SA-LIGBT at different collector voltages in the range of y =0.6 μm,14.8 μm ≦ x ≦ 15.8 μm in the OFF mode; FIG. 12 (b) shows the specific location of y =0.6 μm,14.8 μm ≦ x ≦ 15.8 μm in the transistor;
FIG. 13 shows the concentrations of conventional SA-LIGBT, conventional LIGBT and P-base at 3X 10 15 cm -3 And 9X 10 15 cm -3 Turn-off time comparison graph of new structure SA-LIGBT;
FIG. 14 is a graph comparing the electron concentration of SA-LIGBT with conventional LIGBT in the range of y =4 μm from time t1 to time t 4;
FIG. 15 shows that the length ratios of the conventional SA-LIGBT, the conventional LIGBT and the P-base to the N-collector are respectively 0.5:1 and 1: turn-off time comparison graph of new structure SA-LIGBT at 1;
fig. 16 (a) -16 (j) are diagrams illustrating the main process steps for fabricating the new structure SA-LIGBT trench collector.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Wherein the showings are for the purpose of illustration only and not for the purpose of limiting the invention, shown in the drawings are schematic representations and not in the form of actual drawings; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "front", "rear", etc., based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not an indication or suggestion that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes, and are not to be construed as limiting the present invention, and the specific meaning of the terms may be understood by those skilled in the art according to specific situations.
A SA-LIGBT device with a grid-controlled collector has a structure shown in figure 3. The field emission device comprises an emitter 1, an N + electron emitter 2, a grid 3, a grid oxide layer 4, a P-body5, an N-type drift region 6, an N-buffer I7, a P-collector9, a collector I8, an N-buffer II 10, a P-type electron blocking layer P-base11, an N-collector12 and a collector II 16 which are arranged from left to right; below are an N-type drift region 6, a dielectric isolation layer 14 and a P-type substrate 15. SiO is arranged right below the P-type electron blocking layer P-base11 and the N-collector12 2 An insulating layer 13 and a gated collector 17.
The collector I8 and the collector II 16 are respectively positioned right above the P-collector9 and the N-collector12, and the grid-control collector 17 is positioned right below the P-type electron blocking layer P-base11 and the N-collector 12. And a SiO2 insulating layer 13 is arranged between the grid control collector electrode 17 and the P-collector9 and the N-collector 12. SiO is arranged between the grid control collector electrode 17 and the drift region 6 2 The insulating layer 13 isolates. The collector i 8, the collector ii 16 and the gated collector 17 are applied with exactly the same voltage in use.
The mechanism of the SA-LIGBT device with the groove-shaped collector provided by the invention is as follows:
(1) When the current collector is conducted in the forward direction, the blocking effect of the P-type electron blocking layer P-base on electrons can be controlled by adjusting the concentration and the length of the N-buffer and the P-type electron blocking layer P-base, the short-circuit resistance of the collector is improved, and therefore the snapback effect of the traditional SA-LIGBT is eliminated.
(2) When the transistor is turned off, the positive voltage applied to the grid-control collector can invert the P-base of the P-type electron barrier layer to form an electron channel, so that the extraction speed of electrons is increased, and the turn-off time of the transistor is shortened.
The conventional SA-LIGBT shown in fig. 1, the conventional LIGBT shown in fig. 2 and the new SA-LIGBT shown in fig. 3 were compared by simulation using the piece simulation software. In the simulation process, the simulation parameters of the three transistors are consistent. The thickness of the N-type drift region is 25 mu m, the length of the N-type drift region is 17 mu m, the service life of a carrier is 10 mu s, and the ambient temperature is 300K. Wherein, the length of the P-collector and the N-collector of the new structure SA-LIGBT is 1 μm, and the thickness is 0.6 μm. The initial doping concentration of the P-type electron blocking layer P-base is 9 multiplied by 10 15 cm -3 The initial length was 1 μm and the thickness was 0.6. Mu.m. SiO2 2 The thickness of the spacer layer 13 was 0.1 μm. The length of the gated collector 17 was 2 μm and the thickness was 0.6 μm. The N-type drift region concentration of all devices in the simulation is 1.5 multiplied by 10 14 cm -3 。
Fig. 4 is an equivalent circuit diagram of a new SA-LIGBT structure, the left side of the transistor is equivalent to a parallel structure of a gate-controlled MOS transistor and an NPN transistor formed by an N + electron emitter/P-body/N-drift, the P-body/N-drift/P-collector forms a PNP transistor structure as shown in the figure, the part is the same as a conventional IGBT device, and in the collector region of the transistor, the N-buffer ii, the P-base, the N-collector and the gate-controlled collector may be equivalent to a variable resistor and a gate-controlled MOS structure. In the forward conduction mode, the variable resistor can be regarded as a collector short-circuit resistor R with higher resistance value SA To block the flow of electrons to the N-collector and thereby suppress the snapback effect. In the turn-off mode, the high voltage connected to the collector can change the P-base from P-type inversion to N-type, and the channel of the gate-controlled MOS is turned on to form an electronic channel to accelerate the turn-off time of the transistor. The variable resistor is equivalent to the channel resistance R of the collector control gate CH2 And the higher the collector voltage, R CH2 The smaller the off-time of the transistor.
Fig. 5 is a schematic current diagram of the new structure SA-LIGBT in the forward conducting state, and the lines in the diagram represent the current paths. When conducting in the forward direction, the emitter is grounded, a positive voltage of 15V is applied to the gate, and a gradually increasing positive voltage is applied to the collector. Fig. 5 (a) is a schematic current diagram in the unipolar conduction mode, and fig. 5 (b) is a schematic current diagram in the bipolar conduction mode. As can be seen from fig. 5 (a), only a small current flows from the N + electron emitter to the N-collector, and the collector voltage is small, so that the transistor operates in the unipolar conduction mode, only electrons participate in conduction, and the current is small. In addition, the new structure SA-LIGBT has smaller electron current in unipolar conduction mode than the traditional SA-LIGBT due to the blocking effect of the P-type electron blocking layer on electrons. As can be seen from fig. 5 (b), as the voltage of the collector increases, when the voltage drop between the P-collector and the N-buffer is greater than 0.7V, the P-collector starts to inject holes into the drift region, the transistor enters a bipolar conduction mode, and the current rapidly increases. In addition, with the increase of the voltage of the collecting electrode, the attraction capacity of the N-collector to electrons is enhanced, and meanwhile, the grid-controlled collecting electrode can enable the P-type electron blocking layer to be inverted to form an electron channel, so that more electrons flow to the N-collector.
FIG. 6 shows that the conventional SA-LIGBT and P-base concentrations are 3X 10, respectively, in the forward conduction 15 cm -3 、5×10 15 cm -3 、7×10 15 cm -3 、9×10 15 cm -3 The current-voltage curve of the new structure SA-LIGBT is shown schematically. As can be seen from the figure, under the same condition, the bounce voltage V of the snapback of the traditional SA-LIGBT occurs SB The maximum phenomenon, namely snapback phenomenon of the traditional SA-LIGBT is most obvious. For the new structure SA-LIGBT, the snapback phenomenon is most obvious when the concentration of P-base is minimum, but is still weaker than the traditional SA-LIGBT. With the increase of the concentration of the P-base, the snapback phenomenon of the new structure SA-LIGBT is gradually weakened; and increased to 9X 10 at the P-base concentration 15 cm -3 The snapback phenomenon substantially disappears. This is because the larger the P-base concentration is, the stronger the blocking capability to the electron current is in the unipolar conduction mode, thereby increasing the collector short-circuit resistance and achieving the purpose of suppressing the snapback effect.
Fig. 7 simulates that when the length ratio of P-base to N-collector is 0: 2. 0.5:1.5, 0.7:1.3 and 1:1, a forward conducting current-voltage curve diagram of the new structure SA-LIGBT, and in the process, the total length of the P-base and the N-collector is keptThe length of the grid-control collector electrode is kept consistent. As can be seen in the figure, when the length ratio of the P-base to the N-collector is 0:2 (i.e. no P-base, N-collector length is identical to that of the groove-shaped collector), V SB The voltage is 5.2V and is obviously higher than the other three curves, because the electron current directly flows to the N-collector without the blocking effect of the P-base at the moment, the short-circuit resistance of the collector is small, and the snapback phenomenon is most obvious. When P-base: N-collector =0.5, V of the curve SB Compared with the P-base-free state, the P-base-free state has been obviously reduced, but the P-base length is short, the blocking capability to electrons is not strong, and the snapback phenomenon is not completely eliminated. It can be seen that the snapback phenomenon tends to decrease as the value of P-base: N-collector increases. When the length ratio of the P-base to the N-collector is 1:1, the snapback phenomenon has substantially disappeared. This shows that in addition to adjusting the concentration of the P-base, increasing the length of the P-base can also increase the barrier height of the P-base to electrons, thereby achieving the purpose of suppressing snapback phenomenon. However, the length ratio of the P-base and the N-collector also has an effect on the turn-off capability of the transistor, as will be discussed later.
FIG. 8 (a) is a lateral concentration distribution diagram of electrons in the new structure SA-LIGBT with different P-base concentrations in the forward conduction mode in the range of y =0.3 μm in ordinate, and x ≦ 14.8 μm ≦ 15.2 μm. The specific location of the above ranges in the transistor is shown in fig. 8 (b). As can be seen from FIG. 8, the coordinate range of P-base in the transistor is 15 μm ≦ x ≦ 16 μm,0 μm ≦ x ≦ 0.6 μm, and x =15 μm is the boundary between N-buffer and P-base. The overall trend of the three curves in fig. 8 (a) is approximately the same, and the electron concentration tends to decrease as the x-coordinate increases. Electrons in the range of x being more than or equal to 14.5 mu m and less than or equal to 15 mu m enter the P-base, so that the blocking effect is not obvious, and the electron concentration in the range is more gentle along with the descending trend of the abscissa x. After x > 15 μm, the electron concentration decreases rapidly with increasing abscissa x. This indicates that electrons entering the P-base are hindered by the P-base, so that the ability of lateral diffusion of electrons is reduced. Due to the above process, the collector short-circuit resistance of the transistor is increased, and the snapback phenomenon is suppressed. Further, it can be seen from fig. 8 that, in the case of the same coordinate, the higher the concentration of P-base, the greater the electron concentration there, because the increase of the P-base concentration raises the electron barrier, so that the electrons blocked there become more.
Fig. 9 (a) is a longitudinal concentration distribution diagram of electrons in the new structure SA-LIGBT with different P-base concentrations in the range of coordinates x =15.5 μm, and y is greater than or equal to 0 μm and less than or equal to 0.6 μm under the forward conduction mode (i.e., the electron concentration distribution diagram on the bisector of the P-base in the longitudinal direction, and the specific position is shown in fig. 9 (b)). The trends of the three curves in FIG. 9 (a) are also approximately the same, and specifically, the curves can be divided into two parts, and when y is greater than or equal to 0 μm and less than or equal to 0.5 μm, the electron concentration slowly decreases with the increase of the y coordinate; when y.gtoreq.0.5 μm, the electron concentration rapidly increases with the increase in the y coordinate. These two parts of the curve will be explained separately below. When the voltage on the gated collector is high, electrons in the P-base will be attracted to the lower to form an electron channel, and electrons closer to the gated collector will be attracted more strongly. That is, in the range of 0 μm ≦ y ≦ 0.5 μm, the larger the ordinate y is, the more electrons are attracted to the side of the gated collector, and the blocking ability of the laterally flowing electrons is weaker, resulting in a lower concentration of electrons being blocked there. The electron concentration on the curve gradually decreases as y increases. When y.gtoreq.0.5 μm, the electron concentration rapidly increases with the increase in the y coordinate, indicating that a large number of electrons flow in this range. This is because the P-base forms an electron channel in the range of y is less than or equal to 0.6 μm and is less than or equal to 0.5 μm due to the grid-controlled collector, and a large amount of electrons flow to the N-collector through the channel, resulting in higher electron concentration in the range. When the transistor is turned off, the electron channel provides an extraction path for electrons to the N-collector, so that the turn-off time of the transistor is greatly reduced.
Fig. 10 is a schematic diagram illustrating the flow of current in the transistor when it is turned off. The test circuit used for shutdown is shown in fig. 11. When the grid voltage is 15V, the side of the P-base close to the grid-controlled collector is inverted due to the fact that the grid-controlled collector is connected with higher voltage, and a layer of electron channel is formed. Electrons can flow from the N-buffer to the N-collector through this passage. After the gate voltage changes from 15V to-5V, the gate channel turns off and holes in the drift region are quickly extracted by the P-body and flow out of the transistor through the emitter. Electrons in the drift region rapidly flow from the drift region to the N-collector through an electron channel, so that the transistor can be rapidly turned off.
FIG. 12 (a) is a lateral distribution diagram of the electron concentration of the new structure SA-LIGBT at different collector voltages in the range of y =0.6 μm,14.8 μm ≦ x ≦ 15.8 μm in the OFF mode, and the specific location is shown in FIG. 12 (b). When the collector voltage is 0.1V, the electron concentration in the range is small, which shows that the P-base inversion degree is small and the channel resistance R is small CH2 Is relatively large. And as the collector voltage increases, the electron concentration at the channel becomes higher and higher. This is because the inversion of the P-base becomes more and more pronounced as the collector voltage increases, the channel resistance R CH2 Smaller and smaller transistors have an increased ability to extract electrons when turned off.
FIG. 13 simulates the effect of P-base concentration on the turn-off time of SA-LIGBT with new structure and adds both traditional LIGBT and traditional SA-LIGBT for comparison. The off time refers to the time it takes for the collector current to drop from 90% to 10% of the original current at the time of the test. It can be seen that the turn-off time of the conventional LIGBT is longest, being 830ns; this is because the conventional LIGBT has no electron extraction channel, and the turn-off time is longest; and the traditional SA-LIGBT has the shortest turn-off time of 40ns due to the existence of an N-collector electronic extraction channel. The new structure SA-LIGBT has a P-base concentration of 3X 10 15 cm -3 And 9X 10 15 cm -3 The turn-off time is respectively 70ns and 100ns, the new structure SA-LIGBT also has an N-collector electron extraction channel, and because of the existence of a grid control collector, the P-base can be inverted during turn-off to form an electron channel, which is beneficial to reducing the turn-off time of a transistor, so the turn-off time is obviously shorter than that of the traditional LIGBT; however, due to the existence of the P-base, the turn-off time of the new structure SA-LIGBT is slightly longer than that of the traditional SA-LIGBT. It can also be seen from the figure that the off-time of the new structure SA-LIGBT increases gradually with increasing P-base concentration. This is because the higher the concentration of P-base, the greater the ability to hinder electron extraction at turn-off. And the discussion in the foregoing results inSince the higher the concentration of P-base is, the more advantageous the snapback effect is to be suppressed, a trade-off is required for the forward on/off performance when setting the P-base concentration.
Fig. 14 is a graph comparing the electron concentration of the new structure SA-LIGBT and the conventional LIGBT from time t1 to time t4 in the range of y =4 μm (the specific values of t1 to t4 have been labeled in fig. 13). It can be seen that at the time t1 to the time t4, the electron concentration inside the new structure SA-LIGBT is smaller than that of the traditional LIGBT, and at the time t3 and the time t4, the electron concentration inside the new structure SA-LIGBT gradually approaches to 0, which indicates that the new structure SA-LIGBT has completed the turn-off process at the time t 4. And the electron concentration of the traditional LIGBT is not as low as that of the SA-LIGBT with the new structure from the time t1 to the time t4, and a large amount of electrons still exist at the time t 4. The turn-off performance of the new structure SA-LIGBT is far superior to that of the traditional LIGBT.
FIG. 15 simulates the length ratios between P-base and N-collector of 0.5:1.5 and 1:1, a comparison graph of the turn-off time of the new structure SA-LIGBT is added with the traditional SA-LIGBT and the traditional LIGBT for comparison. As can be seen from the figure, for the new structure SA-LIGBT, the turn-off time is still between the traditional SA-LIGBT and the traditional LIGBT. The turn-off time of the traditional SA-LIGBT and the traditional LIGBT is the same as that of the traditional SA-LIGBT, and is respectively 40ns and 100ns. Furthermore, when P-base: n-collector was selected from 0.5:1.5 Up to 1:1, namely when the length of the P-base is increased, the turn-off time is increased from 60ns to 100ns, which shows that the increase of the length of the P-base also causes the turn-off time of the transistor to be longer, and the influence on the forward turn-on performance and the turn-off performance of the transistor needs to be considered in a design process in a trade-off mode.
FIG. 16 illustrates the main process steps for manufacturing the new structure SA-LIGBT. The main process steps are divided into 10 steps: (a) P-body and N-buffer I are formed in the emitter region by diffusion and ion implantation processes, respectively. (b) And respectively forming a P-collector and an N-buffer II by a two-step ion implantation process. (c) A recess is etched in the collector region by an etching process. (d) Forming a layer of SiO on the left sidewall and bottom of the groove by a deposition process 2 An insulating layer. (e) Removing redundant SiO on the upper part of the left side wall by an etching process according to the depth of the placed electrode 2 An insulating layer. (f) Placement and left sidewall SiO 2 And a metal collector of the same height as the insulating layer. (g) Depositing a layer of SiO on the metal collector 2 An insulating layer. (h) SiO over metal collector 2 A silicon material is epitaxially grown on the insulating layer. (i) And forming the P-base and the N-collector by two ion implantation processes again. (j) Forming a gate oxide layer by deposition and etching processes, and finally placing a metal electrode.
In summary, simulation verification shows that the SA-LIGBT device with the gated collector proposed by the present invention: (1) In the forward conduction state, the snapback effect can be eliminated by adjusting the length and the concentration of the P-type electron blocking layer P-base. (2) When the switch-off is carried out, the switch-off time can be effectively shortened by adjusting the length and the concentration of the P-base; under the same condition, the turn-off time of the new structure SA-LIGBT is slightly longer than that of the traditional SA-LIGBT and is far shorter than that of the traditional LIGBT.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (5)
1. An SA-LIGBT device with gated collector, characterized by: the field emission type field emission device is characterized in that an emitter (1), an N-type electron emitter (2), a grid electrode (3), a grid oxide layer (4), a P-body (5), an N-buffer I (7), a collector I (8), a P-collector (9), an N-buffer II (10), a P-type electron blocking layer P-base (11), an N-collector (12) and a collector II (16) are sequentially arranged, and an N-type drift region (6), a dielectric isolation layer (14) and a P-type substrate (15) are arranged below the field emission type field emission device;
the upper side, the left side and the lower side of the grid control collector (17) are made of SiO 2 An insulating layer (13) covering the right side and SiO 2 The right side of the insulating layer (13) is flush;
the upper side of the N-buffer I (7) is flush with the upper side of the N-type drift region (6), and the left side, the lower side and the right side of the N-buffer I are covered by the N-type drift region (6); the lower side of the collector I (8) is in contact with the upper side of the P-collector (9); the P-The left side and the lower side of the collector (9) are covered by an N-buffer I (7); the upper side of the N-buffer II (10) is flush with the upper side of the N-type drift region (6), the left side of the N-buffer II is in contact with the right side of the P-collector (9), the lower side of the N-buffer II is covered by the N-type drift region (6), and the right side of the N-buffer II is in contact with the left side of the P-base (11) of the P-type electron blocking layer; the upper side of the P-type electron blocking layer P-base (11) is flush with the upper side of the N-type drift region (6), and the lower side of the P-type electron blocking layer P-base is flush with SiO 2 The upper side of the insulating layer (13) is contacted, and the right side of the insulating layer is contacted with the left side of the N-collector (12); the upper side of the N-collector (12) is flush with the upper side of the N-type drift region (6), and the lower side of the N-collector is flush with the SiO 2 The upper side of the insulating layer (13) is in contact with the right side of the N-type drift region (6).
2. The SA-LIGBT device with gated collector of claim 1, wherein: and the collector I (8) and the collector II (16) are respectively placed above the P-collector (9) and the N-collector (12).
3. A SA-LIGBT device with gated collector as claimed in claim 2 wherein: siO is arranged between the grid control collector electrode (17) and the P-type electron blocking layer P-base (11) and the N-collector (12) 2 The insulating layer (13) isolates.
4. A SA-LIGBT device with gated collector according to claim 3 wherein: siO is arranged between the grid control collector electrode (17) and the N-type drift region (6) 2 Insulating layer (13) isolation;
the voltage applied by the collector I (8), the collector II (16) and the grid-controlled collector (17) is completely the same when in use.
5. The SA-LIGBT device with gated collector of claim 1, wherein: the concentrations of the N-buffer I (7) and the N-buffer II (10) can be independently controlled respectively.
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| CN110931556A (en) * | 2019-12-02 | 2020-03-27 | 四川大学 | Reverse conducting IGBT (insulated Gate Bipolar transistor) with back groove gate and floating ring |
| CN112420824B (en) * | 2020-12-09 | 2022-08-19 | 东南大学 | Reverse conducting type transverse insulated gate bipolar transistor capable of eliminating negative resistance effect |
| CN113935268B (en) * | 2021-11-22 | 2024-06-11 | 电子科技大学 | Anode short-circuit transverse insulated gate bipolar transistor equivalent circuit model and simulation method |
| CN117556761A (en) * | 2022-08-03 | 2024-02-13 | 无锡华润上华科技有限公司 | Anode short-circuit transverse insulated gate bipolar transistor model and modeling method thereof |
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