CN108346375A - 显示设备 - Google Patents
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- Publication number
- CN108346375A CN108346375A CN201810034462.3A CN201810034462A CN108346375A CN 108346375 A CN108346375 A CN 108346375A CN 201810034462 A CN201810034462 A CN 201810034462A CN 108346375 A CN108346375 A CN 108346375A
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- China
- Prior art keywords
- protruding portion
- layer
- display equipment
- display
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010410 layer Substances 0.000 claims description 75
- 239000012044 organic layer Substances 0.000 claims description 32
- 238000004020 luminiscence type Methods 0.000 claims description 21
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- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/1533—Constructional details structural features not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/03—Viewing layer characterised by chemical composition
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- G—PHYSICS
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Abstract
本发明公开了一种显示设备,包括一显示元件及一可挠性层。可挠性层包括耦接于显示元件的一第一侧以及相对第一侧的一第二侧。第二侧包括多个彼此分离的突出部。突出部的其中一者包括一侧部、一顶部与一连接部,且连接部自侧部延伸至顶部并具有一曲面。
Description
技术领域
本发明关于一种显示设备,尤指一种提供可挠性或支撑性的可挠性显示设备。
背景技术
平面显示器(flat panel display)由于具有被广泛认可的厚度薄、重量轻及低功耗的特点,因此作为广泛使用于各种电子设备中的信息观看科技,如液晶显示器(liquidcrystal display,LCD)、微型发光二极管(micro light-emitting diode,micro LED)显示器、有机发光二极管(organic light-emitting diode,OLED)显示器与电致发光显示器(electroluminescent display,ELD)。一般而言,目前所制造及售卖的平面显示器设置在刚性玻璃基板上。玻璃基板不仅可以在高温下进行加工,即使在大面积的情况下,其表面也可非常光滑和均匀,并具有如高透明度的理想光学特性。尽管这些特性适用于制作平面显示器,但玻璃的刚性限制了将显示器配置在非平面上或凹凸不平的表面上的应用,且容易破碎。
随着人们对电子设备在各种表面显示信息的需求日益增加,许多应用都希望具有可挠的或可折叠的显示器,其能在不失去所具备的功能下弯曲到厘米程度的曲率半径。使用可挠性基板(如树脂)直接替换平面显示器中的玻璃基板是一种实现可挠性的方法。可挠性基板可实现或改进平面显示器的生产,并使这些显示器符合任何需要的形状,从而显著扩展它们的应用。
然而,尽管可挠性基板具有上述优点,但仍面临新的挑战。可挠性基板容易受外力所伤,如划痕和摩擦。因此,仍需改进可挠性平面显示器,以减轻或消除可挠性基板所存在的问题。
发明内容
本发明提供一种显示设备,其提供可挠性或支撑性。根据本发明的一态样,显示设备包括一显示元件及一可挠性层。可挠性层包括耦接于显示元件的一第一侧以及相对第一侧的一第二侧。此外,可挠性层在第二侧上包括多个彼此分离的突出部。突出部的其中一者包括一侧部、一顶部与一连接部,且连接部自侧部延伸至顶部并具有一曲面。
根据本发明中的另一态样,一显示设备包括一显示元件、一可挠性基材与一支撑层。可挠性基材包括一耦接于显示元件的第一表面以及相对第一表面的一第二表面。支撑层耦接于第二表面,支撑层包括多个突出部彼此互相分离,突出部的其中一者包括一侧部、一顶部与一连接部,且连接部自侧部延伸至顶部并具有一曲面。
根据本发明,显示设备能使用各种显示器,并实质上使显示器更佳可挠而可弯曲或卷曲。此外,本发明提供显示器支撑的强度。
附图说明
图1为本发明第一实施例的显示设备的俯视示意图;
图2为沿图1中切线I-I的显示设备的剖面示意图;
图3为本发明第二实施例的具有不同形状的突出部的显示设备的俯视示意图;
图4为沿图3中切线III-III的显示设备的剖面示意图;
图5为图3中的显示设备沿可折叠轴弯曲的剖面示意图;
图6为本发明第三实施例的具有多个发光单元的显示设备的剖面示意图;
图7为本发明第四实施例的具有多个发光单元的显示设备的剖面示意图;
图8为本发明第五实施例的具有多个发光单元的显示设备的剖面示意图;
图9为本发明第六实施例的具有多个发光单元的显示设备的剖面示意图;
图10为本发明第七实施例的具有多个发光单元的显示设备的剖面示意图;
图11为本发明第八实施例的应用OLED技术的显示设备的剖面示意图;
图12为本发明第九实施例的应用OLED技术的显示设备的剖面示意图;以及
图13为本发明第十实施例的具有保护层的显示设备的剖面示意图。
附图标记说明:10-显示设备;20-显示元件;21-驱动电路层;22-显示层;221-发光单元;30-可挠性层;301-第一侧;302-第二侧;31-可挠性基材;32-支撑层;33-突出部;331-侧部;332-顶部;333-连接部;334-弧角;33a-第一突出部;33b-第二突出部;34-凹陷部;40-覆盖层;50-触控感测层;51-透明导电电极;52-不透明导电电极;60-封装层;61-第一有机层; 611、621-延伸部;62-第二有机层;63-无机绝缘层;70-保护层;A-可折叠区域;T1、T2、T3-厚度;W1、W2、W3、W4-宽度。
具体实施方式
本发明的各态样公开于以下的描述以及对应本发明具体实施例的相关附图中。不同的替代实施例可在不偏离发明范围的情况下被设计出。此外,本发明中的现有元件将不详细描述或将省略,以凸显本发明的相关细节。
文中所使用的“示范”一词是指“作为示例、实例或说明”。此处以“示范”描述的任何实施例不一定被解释为优选于或较佳于其他实施例。同样,“本发明的实施例”一词并不要求本发明的所有实施例包括所讨论的特征、优点或操作方式。
在本发明中,文中所使用“耦接”一词是指“直接或间接结合、连结、设置、紧固或连接”。此外,元件A和元件B不限于机械性或物理性的连接。
文中使用的术语仅用于描述特定实施例,而不欲限制本发明的实施例。除非文中有其他明确指示,文中所用的单数形式如“一”及“该”可同时包括多个的情况。应当理解的是,术语“包括”、“包含”和/或“具有”在使用中为指定文中出现的叙述特征、整体事物、步骤、操作、元件和/或部件,但不排除有其他一个或多个特征、整体事物、步骤、操作、元件、部件和/或群组的存在或加入。
此外,许多实施例根据诸如计算设备的元件执行的作动顺序来描述。得以认知的是此处描述的各种作动可通过特定电路进行(如特殊应用集成电路(ASIC))、通过由一个或多个处理器执行的程序指令、或上述两者的组合。此外,此处所描述的作动顺序可被视为完全具体实施在任何形式的计算机可读取储存介质中,其存有对应的一组计算机指令,在执行时会使相关处理器进行此处所描述的功能。因此,本发明的各个不同态样可由若干不同形式体现,且已被预设在所要求标的的范围内。此外,对于文中所描述的各实施例,任何实施例的相应形式可如此处所描述的诸如“逻辑性地适用于”执行所述的动作。
在以下本发明的实施例中,首先参照图1与图2介绍一显示设备。图 1为本发明第一实施例的显示设备的俯视示意图,而图2为沿图1中切线 I-I的显示设备的剖面示意图。如图所示,参考数字10表示一显示设备。在本实施例中,显示设备10包括一显示元件20与一可挠性层30。选择性地,显示设备10包括一覆盖层40设置于显示元件20上,以保护显示元件20免于受到来自环境中的影响。可挠性层30包括耦接于显示元件20的一第一侧301以及相对第一侧301的一第二侧302。可挠性层30在第一侧301 包括与显示元件20耦接的一可挠性基材31,并在第二侧302包括设置在可挠性基材31上的一支撑层32。本发明中的可挠性层30可选择性地由单一物体所构成。本发明中的可挠性基材31与支撑层32的材料可包括例如聚对苯二甲酸乙二酯(polyethylene terephthalate,PET)、萘二甲酸乙二酯 (polyethylenenaphthalate,PEN)、(polycarbonate,PC)、聚碳酸酯(polyarylate, PAR)、聚醚酰亚胺(polyether imide,PEI)、聚醚砜(polyether sulfone,PES) 或聚酰亚胺(polyimide,PI)。在本实施例中,用于作为可挠性基材的材料与用于作为支撑层的材料不同,其中两者的弹性系数不同。
如图2所示,支撑层32在第二侧302包括多个突出部33与多个凹陷部34,凹陷部34分隔突出部33。在本实施例中,各突出部33具有相同或相似的形状。各突出部33包括一侧部331、一顶部332与一连接部333,侧部331相邻于凹陷部34的其中至少一者,而连接部333自侧部331延伸至顶部332。连接部333具有一曲面连接顶部332以及侧部331。除了连接部333的曲面外,各突出部33包括至少一弧角334。在图1所示的显示设备10的俯视图中,举例而言,突出部33由具有四个弧角334的矩形所形成。在另一实施例中,突出部33由具有多个弧角的多边形所形成。连接部 333的曲面或突出部33的弧角334的配置可有效减少相邻两突出部33之间的摩擦或甚至避免在显示设备10弯折时发生碰撞。此外,为了提供显示器足够的支撑性或可挠性,突出部33在从第一侧301至第二侧302的一方向上具有一厚度T1,并在剖面视角中具有一宽度W1。厚度T1小于宽度 W1。此外,突出部33的宽度W1大于凹陷部34的一宽度W2。在第一实施例中,两个相邻突出部33之间的各凹陷部34可定义出一可折叠区域A。多个可折叠区域排列成一直线并形成一可折叠轴。值得一提的是,凹陷部可意旨两个相邻突出部33之间的空间或支撑层中厚度比突出部33薄的部分。
如图3至图5所示,本发明的一第二实施例的一显示设备提供支撑层 32具不同形状的突出部33。在图3所绘示第二实施例的俯视示意图中,作为示范,突出部33依面积不同分成多个第一突出部33a及多个第二突出部33b。各第一突出部33a的面积与各第二突出部33b的面积不同。进一步而言,各第一突出部33a的面积大于各第二突出部33b的面积。第二突出部 33b排列成两平行的直线并位于两第一突出部33a之间。在本发明中,通过突出部的不同形状可用以调整显示设备10的可弯曲程度。请参考图4,其绘示沿图3中切线III-III的显示设备10的剖面示意图,第一突出部33a 在从第一侧301至第二侧302的方向上具有一厚度T2,而第二突出部33b 在从第一侧301至第二侧302的方向上具有一厚度T3。第一突出部33a的厚度T2大于第二突出部33b的厚度T3。此外,在剖面视角中,第一突出部33a具有一宽度W3,而第二突出部33b具有一宽度W4。第一突出部 33a的宽度W3大于第二突出部33b的宽度W4。明显可知,第二突出部 33b相较于第一突出部33a具有较薄的厚度T3与较窄的宽度W4。如图5 所示,两个相邻第二突出部33b之间的凹陷部34的可折叠区域A具有较大的可弯折性。此外,如第一实施例所述,由于第一突出部33a与第二突出部33b皆具有弧角334并在连接部333上具有曲面,因此搭配弧角334 及在连接部333上的曲面,较薄且较窄的第二突出部33b可更有效地减少相邻两突出部33之间的摩擦或甚至避免在显示设备10弯折时发生碰撞。
图6为本发明一第三实施例的一显示设备的剖面示意图。显示设备10 包括一覆盖层40、一可挠性层30与设置于覆盖层40与可挠性层30之间的一显示元件20。显示元件20另包括一驱动电路层21以及与驱动电路层 21电性连接的一显示层22。可挠性层30包括耦接于显示元件20的一第一侧301,以及相对第一侧301的一第二侧302。可挠性层30在第一侧301 包括一可挠性基材31以及在第二侧302包括一支撑层32,其中可挠性基材31与显示元件20耦接,而支撑层32设置在可挠性基材31上。在本实施例中,显示层22包括多个发光单元221。发光单元221用于提供照明。在本实施例中,发光单元221为发出相同颜色或不同颜色的多个发光二极管。在图6中,突出部33的其中一者对应多个发光单元221中的其中一者设置。图7为本发明一第四实施例的一显示设备的剖面示意图,其中突出部33的其中一者对应三个发光单元221设置。三个发光单元221可提供相同颜色或不同颜色的照明光线,亦即红、绿及蓝,以构成一像素单元。在上述实施例中,当突出部33对应单一发光单元221或一像素单元设置时,突出部33能够提供结构上的强度并同时维持单一发光单元221或像素单元的光学效果。另一方面,在图8中,多个发光单元221对应凹陷部34设置,以提供显示设备10较佳的可挠性。
请参考图9与图10中的实施例,本发明可应用于触控屏幕技术中。图 9为本发明一第六实施例的一显示设备10的剖面示意图,显示设备10另包括一触控感测层50设置于覆盖层40与显示元件20之间。触控感测层 50包括多个透明导电电极51(如氧化铟锡(ITO)电极),形成为一网格状图案 (grid pattern),并可让从发光单元221发出的光线通过。在本实施例中,透明导电电极51分别对应一发光单元221设置。对于图10中的第七实施例,触控感测层50另包括不透明导电电极52(如铝或铜的金属电极),形成为一网格状图案。不透明导电电极52遮蔽来自发光单元221发出的光线并对应任两相邻发光单元221之间的位置设置。藉此,从发光单元221发出的光线仅可由相邻两不透明导电电极52之间通过。显示设备10的照明效果并不会因加入触控感测层50而受影响。除了图9与图10的实施例外,为了应用于内嵌式触控技术(in-cell touch technology)中,触控感测层50可与显示层22或驱动电路层21整并。
图11与图12分别为本发明应用OLED技术的实施例。在图11中,显示设备10另包括一封装层60设置于显示元件20上。封装层60包括具有一第一弹性系数的一第一有机层61以及具有一第二弹性系数的一第二有机层62。封装层62包括两个无机绝缘层63。此外,第一有机层61对应两个相邻的突出部33之间的位置设置,亦即第一有机层61对应凹陷部34 的其中一者设置。
第一有机层61的第一弹性系数小于第二有机层62的第二弹性系数。在本实施例中,第一有机层61的第一弹性系数的范围为约0.001Gpa至 0.05Gpa,其范围可包含0.001Gpa及0.05Gpa,而第二有机层62的第二弹性系数的范围为约2Gpa至20Gpa,其范围可包含2Gpa及20Gpa。然而,第一弹性系数与第二弹性系数并不限于以上的范围。第一有机层61与第二有机层62夹设于两无机绝缘层63之间。第一弹性系数与第二弹性系数为杨氏系数(Young’s modulus),其为固体材料对于被施加力而弹性变形时的抵抗量度。弹性系数数值越高表示该材料刚性越强,亦即在这种情况下,第一有机层61比第二有机层62较为可挠。第一有机层61包括一硅基树脂 (silicon-based resin),而第二有机层62包括一丙烯基树脂(acryl-based resin) 或一环氧基树脂(epoxy-based resin)。如上所述,两个突出部33之间的一凹陷部34定义为一可折叠区域A,藉此,当施力于显示设备10的可折叠区域A时,具有较佳可挠性的第一有机层61可提升显示设备10的弯折能力。
此外,为了避免第一有机层61与第二有机层62脱离或分离,在本实施例中,第一有机层61与第二有机层62部分重迭。在图11中,第一有机层61包括至少一延伸部611朝第二有机层62延伸并覆盖第二有机层62 的一部分。在图12的实施例中,第二有机层62包括至少一延伸部621朝第一有机层61延伸并覆盖第一有机层61的一部分。对于这些实施例来说,由于第一有机层61与第二有机层62具有较大的接触表面,因此可增加第一有机层61与第二有机层62的附着力。
图13为本发明一第十实施例的一显示设备的剖面示意图。为了保护可挠性层30,显示设备10另包括一保护层70设置在可挠性层30的第二侧 302上。保护层70至少覆盖两个相邻的突出部33之间的位置、突出部33 的侧部331以及突出部33的连接部333。选择性地,保护层70可覆盖可挠性层30整个第二侧302的面积,亦即覆盖所有突出部33与凹陷部34。保护层70包括一光固化树脂(photocurable resin)或一光阻树脂(photoresist resin)。藉此,明显可知保护层70的配置进一步提供可挠性层30与显示元件20足够的支撑并维持可挠性层30与显示元件20有效的工作效能。
尽管在上文中提供本发明的多个示范实施例,仍应注意的是可在不超出由附加权利要求所界定的本发明的范围的情况下做各种变化和修改。根据本文所公开实施例的方法权利要求的功能、步骤和/或动作不需依特定的顺序执行。此外,尽管本发明中的元件可用单数来描述或要求,但除非明确限定其为单数,否则应一并考虑多个的情况。
Claims (20)
1.一种显示设备,其特征在于,包括:
一显示元件;以及
一可挠性层,包括耦接于该显示元件的一第一侧以及相对该第一侧的一第二侧,
其中该第二侧包括多个彼此分离的突出部,该多个突出部的其中一者包括一侧部、一顶部与一连接部,且该连接部自该侧部延伸至该顶部并具有一曲面。
2.如权利要求1所述的显示设备,其特征在于,在俯视视角中,该多个突出部具有不同的形状。
3.如权利要求1所述的显示设备,其特征在于,在俯视视角中,该多个突出部的其中一者包括至少一弧角。
4.如权利要求1所述的显示设备,其特征在于,其中该多个突出部包括一第一突出部以及一第二突出部,该第一突出部具有一第一厚度,该第二突出部具有一第二厚度,且该第一厚度大于该第二厚度。
5.如权利要求1所述的显示设备,其特征在于,其中该多个突出部包括一第一突出部以及一第二突出部,该第一突出部具有一第一宽度,该第二突出部具有一第二宽度,且该第一宽度大于该第二宽度。
6.如权利要求1所述的显示设备,其特征在于,其中该可挠性层包括多个凹陷部,且该多个凹陷部分隔该多个突出部。
7.如权利要求6所述的显示设备,其特征在于,其中该多个突出部的其中一者的一宽度大于该多个凹陷部的其中一者的一宽度。
8.如权利要求1所述的显示设备,其特征在于,其中该多个突出部的其中一者有一厚度和一宽度,其中该厚度小于该宽度。
9.如权利要求1所述的显示设备,其特征在于,其中该显示元件包括一驱动电路层以及一显示层,该驱动电路层电性连接该显示层。
10.如权利要求9所述的显示设备,其特征在于,其中该显示层包括多个发光单元,且该多个突出部的其中一者对应该多个发光单元的其中至少一者设置。
11.如权利要求10所述的显示设备,其特征在于,还包括一触控感测层,该触控感测层包括多个透明导电电极,其中该多个透明导电电极的其中一者对应该多个发光单元的其中至少一者设置。
12.如权利要求10所述的显示设备,其特征在于,还包括一触控感测层,该触控感测层包括多个不透明导电电极,其中各该不透明导电电极对应两个相邻的该多个发光单元之间的位置设置。
13.如权利要求9所述的显示设备,其特征在于,还包括一封装层,该封装层设置于该显示元件上,其中该封装层包括具有一第一弹性系数的一第一有机层以及具有一第二弹性系数的一第二有机层,且该第一有机层对应两个相邻的该多个突出部之间的位置设置,其中该第一弹性系数小于该第二弹性系数。
14.如权利要求13所述的显示设备,其特征在于,其中该第一有机层与该第二有机层部分重迭。
15.如权利要求1所述的显示设备,其特征在于,还包括一保护层,该保护层设置在该可挠性层的该第二侧上并至少覆盖两个相邻的该多个突出部之间的位置、该多个突出部的该多个侧部以及该多个突出部的该多个连接部。
16.如权利要求1所述的显示设备,其特征在于,其中该可挠性层包括一可挠性基材与一支撑层,其中该可挠性基材与该显示元件耦接,且该支撑层设置在该可挠性基材上,该支撑层包括该多个突出部与多个凹陷部。
17.一种显示设备,其特征在于,包括:
一显示元件;
一可挠性基材,包括一耦接于该显示元件的第一表面以及相对该第一表面的一第二表面;以及
一支撑层,耦接于该第二表面,该支撑层包括多个突出部彼此互相分离,该多个突出部的其中一者包括一侧部、一顶部与一连接部,且该连接部自该侧部延伸至该顶部并具有一曲面。
18.如权利要求17所述的显示设备,其特征在于,其中该支撑层包括多个凹陷部,且该多个凹陷部分隔该多个突出部。
19.如权利要求17所述的显示设备,其特征在于,在俯视视角中,该多个突出部的其中一者包括至少一弧角。
20.如权利要求17所述的显示设备,其特征在于,其中该多个突出部包括一第一突出部以及一第二突出部,并在俯视视角中,该第一突出部具有一第一面积而该第二突出部具有一第二面积,且该第一面积与该第二面积不同。
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US10665583B2 (en) | 2020-05-26 |
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