CN110226229A - 一种显示器件结构 - Google Patents
一种显示器件结构 Download PDFInfo
- Publication number
- CN110226229A CN110226229A CN201880005881.2A CN201880005881A CN110226229A CN 110226229 A CN110226229 A CN 110226229A CN 201880005881 A CN201880005881 A CN 201880005881A CN 110226229 A CN110226229 A CN 110226229A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- inorganic light
- miniature
- display device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000005669 field effect Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明涉及一种单元显示像素由微型有源无机发光二极管单元芯片组成的任意曲面显示器件,每个微型有源无机发光二极管单元芯片包括无机发光二极管单元器件和场效应管。任意曲面的衬底上存在导线,而且导线连接每个微型有源无机发光二极管单元芯片。
Description
PCT国内申请,说明书已公开。
Claims (8)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/000005 WO2019134057A1 (zh) | 2018-01-02 | 2018-01-02 | 一种显示器件结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110226229A true CN110226229A (zh) | 2019-09-10 |
Family
ID=67143516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880005881.2A Pending CN110226229A (zh) | 2018-01-02 | 2018-01-02 | 一种显示器件结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11348968B2 (zh) |
CN (1) | CN110226229A (zh) |
WO (1) | WO2019134057A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110649060B (zh) * | 2019-11-01 | 2022-04-26 | 京东方科技集团股份有限公司 | 微发光二极管芯片及制作方法、显示面板制作方法 |
Citations (9)
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CN1256792A (zh) * | 1998-03-02 | 2000-06-14 | 精工爱普生株式会社 | 三维器件 |
CN101660206A (zh) * | 2009-09-10 | 2010-03-03 | 厦门市三安光电科技有限公司 | 一种完整性GaN基薄膜的制备方法 |
CN101847646A (zh) * | 2010-02-02 | 2010-09-29 | 孙润光 | 一种无机发光二极管显示装置 |
CN102396067A (zh) * | 2009-04-15 | 2012-03-28 | 全球Oled科技有限责任公司 | 具有多边形小芯片的显示装置 |
CN103855179A (zh) * | 2012-12-03 | 2014-06-11 | 孙润光 | 一种无机发光二极管显示器件结构 |
CN104350613A (zh) * | 2012-04-27 | 2015-02-11 | 勒克斯维科技公司 | 形成具有自对准金属化堆栈的微型led器件的方法 |
CN105242444A (zh) * | 2015-09-18 | 2016-01-13 | 友达光电股份有限公司 | 显示面板 |
US20160293634A1 (en) * | 2015-04-06 | 2016-10-06 | Samsung Display Co., Ltd. | Flexible display device and method of manufacturing the same |
FR3044467A1 (fr) * | 2015-11-26 | 2017-06-02 | Commissariat Energie Atomique | Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9252375B2 (en) * | 2013-03-15 | 2016-02-02 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
CN103995361B (zh) * | 2014-06-17 | 2017-01-11 | 上海新视觉立体显示科技有限公司 | 裸眼3d显示像素单元及多视图裸眼3d图像显示设备 |
CN110010750B (zh) * | 2014-06-18 | 2021-11-09 | 艾克斯展示公司技术有限公司 | 微组装led显示器 |
CN106611764B (zh) * | 2015-10-27 | 2019-12-10 | 群创光电股份有限公司 | 显示设备 |
US10304813B2 (en) * | 2015-11-05 | 2019-05-28 | Innolux Corporation | Display device having a plurality of bank structures |
US10091446B2 (en) * | 2015-12-23 | 2018-10-02 | X-Celeprint Limited | Active-matrix displays with common pixel control |
US10132478B2 (en) * | 2016-03-06 | 2018-11-20 | Svv Technology Innovations, Inc. | Flexible solid-state illumination devices |
US10593657B2 (en) * | 2016-11-01 | 2020-03-17 | Innolux Corporation | Display devices and methods for forming the same |
US10325893B2 (en) * | 2016-12-13 | 2019-06-18 | Hong Kong Beida Jade Bird Display Limited | Mass transfer of micro structures using adhesives |
KR102612998B1 (ko) * | 2016-12-30 | 2023-12-11 | 엘지디스플레이 주식회사 | 표시 장치 및 이를 이용한 멀티 스크린 표시 장치 |
CN106782128A (zh) * | 2017-01-24 | 2017-05-31 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制造方法 |
US10312228B2 (en) * | 2017-01-25 | 2019-06-04 | Innolux Corporation | Display device |
KR102060471B1 (ko) * | 2017-02-01 | 2019-12-30 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법 |
US20190044023A1 (en) * | 2017-08-01 | 2019-02-07 | Innolux Corporation | Methods for manufacturing semiconductor device |
-
2018
- 2018-01-02 US US16/772,801 patent/US11348968B2/en active Active
- 2018-01-02 WO PCT/CN2018/000005 patent/WO2019134057A1/zh active Application Filing
- 2018-01-02 CN CN201880005881.2A patent/CN110226229A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1256792A (zh) * | 1998-03-02 | 2000-06-14 | 精工爱普生株式会社 | 三维器件 |
CN102396067A (zh) * | 2009-04-15 | 2012-03-28 | 全球Oled科技有限责任公司 | 具有多边形小芯片的显示装置 |
CN101660206A (zh) * | 2009-09-10 | 2010-03-03 | 厦门市三安光电科技有限公司 | 一种完整性GaN基薄膜的制备方法 |
CN101847646A (zh) * | 2010-02-02 | 2010-09-29 | 孙润光 | 一种无机发光二极管显示装置 |
CN104350613A (zh) * | 2012-04-27 | 2015-02-11 | 勒克斯维科技公司 | 形成具有自对准金属化堆栈的微型led器件的方法 |
CN103855179A (zh) * | 2012-12-03 | 2014-06-11 | 孙润光 | 一种无机发光二极管显示器件结构 |
US20160293634A1 (en) * | 2015-04-06 | 2016-10-06 | Samsung Display Co., Ltd. | Flexible display device and method of manufacturing the same |
CN105242444A (zh) * | 2015-09-18 | 2016-01-13 | 友达光电股份有限公司 | 显示面板 |
FR3044467A1 (fr) * | 2015-11-26 | 2017-06-02 | Commissariat Energie Atomique | Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse |
Also Published As
Publication number | Publication date |
---|---|
US20210167120A1 (en) | 2021-06-03 |
US11348968B2 (en) | 2022-05-31 |
WO2019134057A1 (zh) | 2019-07-11 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20200330 Address after: 264006 no.414, building 2, No.32 Zhujiang Road, Yantai Economic and Technological Development Zone, Shandong Province Applicant after: Liu Hongyu Address before: 201800, room 23, building 475, Lane 102, Tacheng Road, Shanghai, Jiading District Applicant before: Sun Runguang Applicant before: Liu Hongyu |
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TA01 | Transfer of patent application right |