CN108313973B - Pixel-level packaging structure of uncooled infrared detector and processing method - Google Patents
Pixel-level packaging structure of uncooled infrared detector and processing method Download PDFInfo
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- CN108313973B CN108313973B CN201711450808.XA CN201711450808A CN108313973B CN 108313973 B CN108313973 B CN 108313973B CN 201711450808 A CN201711450808 A CN 201711450808A CN 108313973 B CN108313973 B CN 108313973B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 238000003672 processing method Methods 0.000 title claims description 3
- 238000005530 etching Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000005247 gettering Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000011797 cavity material Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000009461 vacuum packaging Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a pixel-level packaging structure of an uncooled infrared detector, which comprises a reading circuit and a vacuum chamber array positioned on the upper surface of the reading circuit, wherein the vacuum chamber array comprises a plurality of vacuum chambers separated by insulating grooves, each vacuum chamber is internally provided with a pixel unit device to form a pixel-level packaging unit, and the side wall of the interior of each vacuum chamber is covered with a getter to form an air suction side wall.
Description
Technical Field
The invention belongs to the technical field of Micro-Electro-Mechanical systems (MEMS), and particularly relates to a pixel level packaging structure of an uncooled infrared detector.
Background
Vacuum packaging is one of the difficulties in MEMS technology, and the quality of vacuum sealing has an important influence on the performance of MEMS devices, even determines whether the devices can work normally. Because of the existence and the release of the residual gas of the bonding material and the cavity material, the vacuum degree in the cavity is reduced along with the passage of the working time of the device, and the service life of the device is shortened.
For the uncooled infrared detector, the traditional packaging type is mainly chip-level packaging or wafer-level packaging, namely, the whole detector area array is packaged in a vacuum cavity by utilizing a semiconductor manufacturing technology, the process is simple, the mass production can be realized, but the method has poor reliability, and once the vacuum fails, the whole detector cannot work normally.
In the prior art, CN 102956662a discloses a vacuum sealing package structure of an infrared focal plane detector chip, in order to improve the vacuum degree of wafer level package, a getter is welded between the detector chip and the bottom of a package shell, but this method can only realize the bottom setting of the getter, has a small area for absorbing residual gas, cannot maintain the vacuum degree in a cavity for a long time, and once the vacuum fails, all pixels in the wafer level package structure are affected, resulting in that the whole detector cannot work normally.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides a pixel-level packaging structure and a pixel-level packaging method of a non-refrigeration infrared detector, wherein the getter is filled in the inner side wall of the pixel-level packaging structure, the purpose is to respectively carry out vacuum packaging on each pixel of the non-refrigeration infrared detector, each pixel can be independent and not influenced mutually, the getter is arranged on the inner wall of each pixel-level packaging structure, the vacuum degree in a cavity is maintained by the getter, so that each pixel works stably and reliably, and the service life of the whole detector is prolonged. Therefore, the technical problem that the whole uncooled infrared detector cannot work normally due to easy vacuum failure is solved.
In order to achieve the above object, according to an aspect of the present invention, there is provided a package structure of an uncooled infrared detector, including a readout circuit and a vacuum chamber array on an upper surface of the readout circuit, where the vacuum chamber array includes a plurality of vacuum chambers separated by insulating trenches, each vacuum chamber accommodates a pixel unit device to form a pixel-level package unit, and a suction sidewall formed by a getter is disposed on an inner sidewall of the vacuum chamber, the suction sidewall can absorb residual gas in the vacuum chamber in a large area, and the sidewall structure of the vacuum chamber is strengthened while maintaining a vacuum degree, and the position of the sidewall is filled with the getter without affecting the absorption of the pixel to a light source.
The outer side wall of the vacuum chamber comprises a support shell, the support shell is provided with a release channel communicated with the inside of the vacuum chamber, and an outlet of the release channel is covered by an antireflection film.
An antireflection film is sealed at the top of the vacuum chamber, preferably, a gas suction upper wall formed by a getter is arranged on the lower surface of the antireflection film, the gas suction upper wall is positioned in a region of the pixel outside a vertical projection region on the antireflection film, and the region does not influence a pixel absorption light source.
Preferably, the bottom of the vacuum chamber is provided with a lower suction wall formed by the getter, so that the absorption area of the getter to residual gas in the vacuum chamber can be further increased.
Preferably, the side wall of said air suction is connected with the upper wall of air suction, the lower wall of air suction respectively, can utilize the inner surface of the vacuum chamber to fill the air suction agent to the maximum extent, make the working life of the picture element obtain the maximum extension.
According to another aspect of the present invention, there is provided a method for processing a pixel-level package structure of an uncooled infrared detector, including the steps of:
s1: obtaining a plurality of pixel unit devices which are orderly arranged on the upper surface of a reading circuit, covering a sacrificial layer, and etching the sacrificial layer downwards to obtain a grid-shaped groove for dividing pixels, wherein the etching is deep to the bottom end of the sacrificial layer;
s2: filling a getter in the groove, etching the getter downwards along the middle part of the groove to obtain a getter groove and getter side walls on two sides of the getter groove, wherein the etching is deep to the bottom end of the getter;
s3: filling a support material into the getter groove, and etching the support material downwards along the middle part of the groove to obtain an insulation groove and support structures on two sides of the insulation groove;
s4: and forming a release channel communicated with the sacrificial layer and the top of the support structure in the support structure, growing antireflection films on the upper surfaces of the sacrificial layer and the air suction side wall, removing the sacrificial layer through the release channel, and further growing an antireflection film to cover the top of the release channel to obtain the pixel-level packaging structure.
Preferably, before obtaining a plurality of regularly arranged pixel unit devices on the upper surface of the readout circuit, the method further comprises: the getter is grown on the upper surface of the readout circuit to form a lower getter wall.
Preferably, before the growing of the antireflection film, the method further comprises: and etching a shallow groove in the region outside the pixel vertical projection region on the upper surface of the sacrificial layer, and filling a getter into the shallow groove to obtain the upper air suction wall.
Preferably, the method of removing the sacrificial layer is thermal release.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
1. the application realizes that the getter is used on the side wall of the packaging structure, compared with the prior art, the area of the getter is increased, the packaging space is saved, the side wall structure of the vacuum chamber can be further firmed, and the pixel can work more stably; and each pixel is independently vacuum-packaged, so that the inner surface area, particularly the side wall area, of the packaging structure is increased compared with wafer-level packaging, the filling area of the getter is further expanded, the vacuum degree is effectively improved, and the service life of the detector is prolonged.
2. The area outside the pixel projection area at the top of the vacuum chamber is provided with the air suction upper wall, so that the vacuum degree of the vacuum chamber is further improved under the condition that the pixel absorption light source is not influenced, and the service life of the pixel is prolonged.
3. Getters are used at multiple positions in the side wall, the top and the bottom of the vacuum chamber, the residual gas absorbed by the getters is maximized by fully utilizing the inner wall of the vacuum chamber, and the working stability and reliability of the detector are improved while the packaging space is saved.
4. A release channel is arranged on the side wall of the vacuum chamber and used for discharging impurities in the vacuum chamber, and when the detector works, the anti-reflection film covers the release channel to ensure the vacuum sealing state in the packaging structure.
Drawings
FIG. 1 is the structure of the product obtained in S3 in example 1;
fig. 2 is a pixel level package structure before the sacrificial layer is removed in embodiment 1;
fig. 3 is a pixel-level package structure in embodiment 1;
FIG. 4 is the structure of the product obtained in S3 in example 2;
FIG. 5 is a pixel level package structure before the removal of the sacrificial layer in embodiment 2;
fig. 6 is a pixel-level package structure in embodiment 2;
fig. 7 is a pixel-level package unit in embodiment 2;
fig. 8 is a plurality of pixel-level package units arranged in line in embodiment 2;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-readout circuitry, 2-pixel cell device, 3-sacrificial layer, 4-1-gettering sidewall, 4-2-gettering top wall, 4-3-gettering bottom wall, 5-support structure, 6-insulating trench, 7-anti-reflection film, a-pixel level package structure of example 1, B-pixel level package structure of example 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
As shown in fig. 3, a pixel level package structure a includes a readout circuit 1 and a vacuum chamber array located on an upper surface of the readout circuit 1, where the vacuum chamber array includes a plurality of vacuum chambers separated by insulating trenches 6, each vacuum chamber accommodates a pixel unit device 2 to form a pixel level package unit, and a suction sidewall 4-1 formed by a getter is disposed on an inner sidewall of the vacuum chamber. The method for obtaining the pixel-level packaging structure A comprises the following steps:
s1: obtaining a plurality of pixel unit devices 2 which are orderly arranged on the upper surface of a reading circuit 1, covering a sacrificial layer 3, and etching the sacrificial layer 3 downwards to obtain a grid-shaped groove for dividing pixels, wherein the etching is deep to the bottom end of the sacrificial layer 3;
s2: filling a getter in the groove, etching the getter along the middle part of the groove to obtain a getter groove and getter side walls 4-1 at two sides of the getter groove, wherein the etching is deep to the bottom end of the getter;
s3: filling a support material into the getter groove, and etching the support material downwards along the middle part of the groove to obtain an insulation groove 6 and support structures 5 at two sides of the insulation groove 6, as shown in fig. 1;
s4: forming a release channel communicating the sacrificial layer 3 and the top of the support structure 5 inside the support structure 5, growing an antireflection film 7 shown in fig. 2 on the upper surfaces of the sacrificial layer 3 and the suction sidewall 4-1, removing the sacrificial layer 3 from the release channel, and further growing an antireflection film 7 to cover the top of the release channel, thereby forming a pixel-level package structure a shown in fig. 3.
Example 2
As shown in fig. 4, a pixel-level package structure B includes a readout circuit 1 and a vacuum chamber array located on an upper surface of the readout circuit 1, where the vacuum chamber array includes a plurality of vacuum chambers separated by insulating trenches 6, each vacuum chamber accommodates a pixel unit device 2 to form a pixel-level package unit, a suction sidewall 4-1 formed by a getter is disposed on an inner sidewall of the vacuum chamber, a suction upper wall 4-2 is disposed on a region of the top of the vacuum chamber outside a vertical projection region of a pixel, and a suction lower wall 4-3 formed by a getter is disposed at the bottom of the vacuum chamber. The method for obtaining the pixel-level packaging structure B comprises the following steps:
s1: growing a lower air suction wall 4-3 on the upper surface of the reading circuit 1, obtaining a plurality of pixel unit devices 2 which are arranged in order on the upper surface of the lower air suction wall 4-3, covering a sacrificial layer 3, etching the sacrificial layer 3 downwards to obtain a groove for dividing each pixel, and etching downwards to reach the bottom end of the sacrificial layer 3;
s2: filling a getter in the groove, etching the getter along the middle part of the groove to obtain a getter groove and getter side walls 4-1 at two sides of the getter groove, wherein the etching is deep to the bottom end of the getter;
s3: filling a support material into the getter groove, and etching the support material downwards along the middle part of the groove to obtain an insulation groove 6 and support structures 5 on two sides of the insulation groove 6;
s4: forming a release channel communicating the sacrificial layer 3 and the top of the support structure 5 inside the support structure 5, etching a shallow trench in a region outside a pixel vertical projection region on the upper surface of the sacrificial layer 3, filling a getter into the shallow trench to obtain a getter upper wall 4-2 as shown in fig. 4, growing an antireflection film 7 as shown in fig. 5 on the upper surface of the getter upper wall 4-2, removing the sacrificial layer 3 through the release channel, and further growing an antireflection film 7 to cover the top of the release channel to form a pixel-level packaging structure B as shown in fig. 6.
Fig. 7 shows a pixel level package unit.
Fig. 8 shows a plurality of pixel level packaging units arranged in order, every two adjacent pixel level packaging units are separated by an insulation groove 6, each pixel level packaging unit comprises a suction side wall 4-1, a suction upper wall 4-2 and a suction lower wall 4-3, and the suction side wall 4-1 is respectively connected with the suction upper wall 4-2 and the suction lower wall 4-3.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (4)
1. A processing method of a pixel level packaging structure comprises the following steps:
s1: obtaining a plurality of pixel unit devices which are orderly arranged on the upper surface of a reading circuit, covering a sacrificial layer, etching the sacrificial layer to obtain a grid-shaped groove for dividing pixels, wherein the etching is deep to the bottom end of the sacrificial layer;
s2: filling a getter in the groove, etching the getter along the middle part of the groove to obtain a getter groove and getter side walls on two sides of the getter groove, wherein the etching is deep to the bottom end of the getter;
s3: filling a support material into the getter groove, and etching the support material downwards along the middle part of the groove to obtain an insulation groove and support structures on two sides of the insulation groove;
s4: and forming a release channel for connecting the sacrificial layer and the top of the support structure in the support structure, growing antireflection films on the upper surfaces of the sacrificial layer and the air suction side wall, removing the sacrificial layer from the release channel, and blocking the release channel to obtain the pixel-level packaging structure.
2. The process of claim 1, wherein step S1, before obtaining a plurality of regularly arranged pixel cell devices on the top surface of the readout circuit, further comprises: the getter is grown on the upper surface of the readout circuit to form a lower getter wall.
3. The process of claim 1, wherein step S1 further comprises, before growing an anti-reflection film on the upper surfaces of the sacrificial layer and the gettering sidewalls: and etching a shallow groove in the region outside the pixel vertical projection region on the upper surface of the sacrificial layer, filling a getter in the shallow groove to obtain an air suction upper wall, and connecting the air suction upper wall with the air suction side wall.
4. The process of claim 1 wherein the sacrificial layer is removed by heat release.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711450808.XA CN108313973B (en) | 2017-12-27 | 2017-12-27 | Pixel-level packaging structure of uncooled infrared detector and processing method |
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| CN201711450808.XA CN108313973B (en) | 2017-12-27 | 2017-12-27 | Pixel-level packaging structure of uncooled infrared detector and processing method |
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| CN108313973B true CN108313973B (en) | 2020-05-26 |
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| CN112499580B (en) * | 2020-11-05 | 2024-03-26 | 武汉鲲鹏微纳光电有限公司 | Uncooled infrared detector, chip and manufacturing method of chip |
| CN114203744B (en) * | 2022-02-15 | 2022-06-10 | 武汉高芯科技有限公司 | Non-refrigeration infrared detector with suspended getter and manufacturing method thereof |
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| FR2981198B1 (en) * | 2011-10-11 | 2014-04-04 | Commissariat Energie Atomique | ELECTRONIC DEVICE ENCAPSULATION STRUCTURE AND METHOD FOR PRODUCING SUCH STRUCTURE |
| CN103359677B (en) * | 2012-03-29 | 2015-11-25 | 比亚迪股份有限公司 | A kind of Infrared Detectors encapsulating structure and preparation method thereof |
| CN202601616U (en) * | 2012-05-31 | 2012-12-12 | 苏州晶方半导体科技股份有限公司 | Infrared sensor packaging structure |
| US8691607B2 (en) * | 2012-06-07 | 2014-04-08 | Texas Instruments Incorporated | Hermetically sealed MEMS device and method of fabrication |
| CN102935994A (en) * | 2012-08-13 | 2013-02-20 | 武汉高德红外股份有限公司 | Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method |
| CN104022046B (en) * | 2014-06-13 | 2017-07-11 | 中国科学院上海微***与信息技术研究所 | Mixing wafer-level vacuum encapsulating method and structure based on banding getter |
| CN105304505B (en) * | 2014-06-17 | 2018-07-06 | 中国科学院上海微***与信息技术研究所 | Mix wafer-level vacuum encapsulating method and structure |
| CN105449008B (en) * | 2014-07-10 | 2017-05-17 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN205133146U (en) * | 2015-11-17 | 2016-04-06 | 合肥芯福传感器技术有限公司 | High vacuum packaging structure of MEMS based on getter |
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