CN108313973A - A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector - Google Patents
A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector Download PDFInfo
- Publication number
- CN108313973A CN108313973A CN201711450808.XA CN201711450808A CN108313973A CN 108313973 A CN108313973 A CN 108313973A CN 201711450808 A CN201711450808 A CN 201711450808A CN 108313973 A CN108313973 A CN 108313973A
- Authority
- CN
- China
- Prior art keywords
- pixel
- getter
- vacuum chamber
- breathing
- sacrificial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 41
- 238000003672 processing method Methods 0.000 title claims description 6
- 238000010276 construction Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000011797 cavity material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a kind of pixel class encapsulation structures of non-refrigerated infrared detector, the vacuum chamber array of upper surface including reading circuit and positioned at reading circuit, vacuum chamber array includes multiple vacuum chambers by insulated trench interval, there are one pixel unit devices for storage in each vacuum chamber, constitute Pixel-level encapsulation unit, the internal side wall of the vacuum chamber is covered with getter, form suction sidewall, the encapsulation of each pixel is independent individual by the present invention, it does not influence between each other, the area of getter is considerably increased using side wall, to maintain the vacuum degree in cavity, extend the service life of device.
Description
Technical field
The invention belongs to MEMS (Micro-Electro-Mechanical System, microelectromechanical processes) technical fields, more
In particular it relates to a kind of pixel class encapsulation structure of non-refrigerated infrared detector.
Background technology
Vacuum Package is one of problem of MEMS technology, and the quality of vacuum leakproofness has the performance of MEMS device important
It influences, or even decides whether device can work normally.Due to the presence and release of bonding material and cavity material residual gas,
With the passage of device working time, the vacuum degree in cavity reduces, and shortens the service life of device.
For non-refrigerated infrared detector, traditional encapsulated type is mainly wafer-level package or wafer-level packaging,
Entire detector array is encapsulated in a vacuum chamber using semiconductor fabrication, technical process is fairly simple, and
Can be with batch micro operations, but this method poor reliability, once the entire detector of vacuum failure will be unable to work normally.
Prior art CN 102956662A disclose a kind of infrared focal plane detector chip vacuum encapsulation structure,
To improve the vacuum degree of wafer-level packaging, getter is welded between detector chip and encapsulating housing bottom, but this method is only
It can realize the bottom setting of getter, the area for absorbing residual gas is smaller, vacuum degree that cannot be in long-time holding chamber body, and
Once vacuum failure can influence all pixels in wafer level packaging structure, entire detector is caused to will be unable to work normally.
Invention content
For the disadvantages described above or Improvement requirement of the prior art, the present invention provides a kind of internal side walls to be filled with getter
The pixel class encapsulation structure and method of non-refrigerated infrared detector, its object is to by each pixel of non-refrigerated infrared detector
Carry out Vacuum Package respectively, ensure each pixel can independently, be independent of each other, and make full use of each pixel class encapsulation structure
Inner wall getter is set, maintain the vacuum degree in cavity by getter, keep each pixel operation stable, reliable, so
Extend the service life of entire detector.Thus solving the easy vacuum failure of non-refrigerated infrared detector causes entirety can not be just
Often the technical issues of work.
To achieve the above object, according to one aspect of the present invention, a kind of encapsulation of non-refrigerated infrared detector is provided
Structure, including reading circuit and the vacuum chamber array positioned at the upper surface of reading circuit, the vacuum chamber array includes multiple
By the vacuum chamber at insulated trench interval, there are one pixel unit devices for storage in each vacuum chamber, constitute Pixel-level encapsulation
Unit is provided with the suction sidewall of getter composition in the internal side wall of the vacuum chamber, and the suction sidewall can be with large area
The indoor residual gas of vacuum is absorbed, the also firm side wall construction of vacuum chamber while maintaining vacuum degree, and the position of side wall
It sets and fills out getter and can't influence absorption of the pixel to light source.
The exterior side wall of the vacuum chamber includes support housing, and the support housing has releasing for the inside of conducting vacuum chamber
Channel is put, the outlet of the release channel is covered by anti-reflection film.
It is sealed with anti-reflection film at the top of the vacuum chamber, it is preferable that the lower surface of the anti-reflection film is provided with getter structure
At air-breathing upper wall, the air-breathing upper wall is located at the region other than upright projection area of the pixel on anti-reflection film, the region not shadow
It rings pixel and absorbs light source.
Preferably, the bottom of the vacuum chamber is provided with the air-breathing lower wall being made of getter, can further increase suction
Absorption area of the gas agent to residual gas in vacuum chamber.
Preferably, the suction sidewall is connected with air-breathing upper wall, air-breathing lower wall respectively, can utilize vacuum chamber to the greatest extent
Inner surface fill getter, so that the working life of pixel is maximumlly extended.
It is another aspect of this invention to provide that providing a kind of processing of the pixel class encapsulation structure of non-refrigerated infrared detector
Method includes the following steps：
S1：The pixel unit device of multiple proper alignments is obtained in the upper surface of reading circuit, and is covered with sacrificial layer, downwards
The latticed groove that the sacrificial layer obtains segmenting pixels is etched, the etching is deeply to the bottom end of sacrificial layer；
S2：Fill getter into groove, the getter etched downwards along the middle part of groove, obtain getter slot and
The suction sidewall on getter slot both sides, the etching is deeply to the bottom end of getter；
S3：Backing material is filled into getter slot, the backing material is etched downwards along the middle part of the groove, is obtained
The support construction on insulated trench and insulated trench both sides；
S4：Connection sacrificial layer and the release channel at the top of support construction are formed inside the support construction, in described sacrificial
Domestic animal layer and the upper surface of suction sidewall grow anti-reflection film, remove the sacrificial layer by the release channel, and further growth increases
Permeable membrane covers the top of the release channel, obtains pixel class encapsulation structure.
Preferably, it is also wrapped before the pixel unit device that the upper surface of the reading circuit obtains multiple proper alignments
It includes：Getter is grown in the upper surface of reading circuit, forms air-breathing lower wall.
Preferably, further include before the growth anti-reflection film：Pixel upright projection in the upper surface of the sacrificial layer
Region etch shallow slot other than area fills getter into shallow slot, obtains air-breathing upper wall.
Preferably, the method for the removal sacrificial layer is that heat discharges.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect：
1, the application is realized uses getter on the side wall of encapsulating structure, increases getter compared with prior art
Area, while encapsulated space is saved, and the side wall construction of the further firm vacuum chamber of energy, so that pixel is more steadily worked；And
The application encapsulates each pixel independent vacuum, compared to the internal surface area especially side wall that wafer-level packaging increases encapsulating structure
Area has further expanded the filling region of getter, has effectively improved vacuum degree, extends the service life of detector.
2, air-breathing upper wall is arranged in the region other than the top pixel projected area of vacuum chamber, absorbs light source not influencing pixel
In the case of further improve the vacuum degree of vacuum chamber, extend the working life of pixel.
3, many places use getter in the side wall of vacuum chamber, top, bottom, and the inner wall of vacuum chamber is made full use of to make air-breathing
Agent absorb residual gas reach maximizations, improved while saving encapsulated space detector work stability with reliably
Property.
4, release channel is set in the side wall of vacuum chamber, for being discharged the indoor impurity of vacuum, and detector work when
Standby anti-reflection film covers the release channel, ensures the vacuum sealing state in encapsulating structure.
Description of the drawings
Fig. 1 is the product structure that S3 is obtained in embodiment 1；
Fig. 2 is that the pixel class encapsulation structure before sacrificial layer is removed in embodiment 1；
Fig. 3 is the pixel class encapsulation structure in embodiment 1；
Fig. 4 is the product structure that S3 is obtained in embodiment 2；
Fig. 5 is that the pixel class encapsulation structure before sacrificial layer is removed in embodiment 2；
Fig. 6 is the pixel class encapsulation structure in embodiment 2；
Fig. 7 is the Pixel-level encapsulation unit in embodiment 2；
Fig. 8 is multiple Pixel-level encapsulation units of the proper alignment in embodiment 2；
In all the appended drawings, identical reference numeral is used for indicating identical element or structure, wherein：
1- reading circuits, 2- pixel unit devices, 3- sacrificial layers, 4-1- suction sidewalls, 4-2- air-breathing upper walls, 4-3- air-breathings
Lower wall, 5- support constructions, 6- insulated trench, 7- anti-reflection films, the pixel class encapsulation structure of A- embodiments 1, the pixel of B- embodiments 2
Class encapsulation structure.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
It does not constitute a conflict with each other and can be combined with each other.
Embodiment 1
As shown in figure 3, a kind of pixel class encapsulation structure A, including reading circuit 1 and positioned at the upper surface of reading circuit 1
Vacuum chamber array, the vacuum chamber array includes multiple vacuum chambers being spaced by insulated trench 6, is received in each vacuum chamber
It receives there are one pixel unit device 2, constitutes Pixel-level encapsulation unit, getter structure is provided in the internal side wall of the vacuum chamber
At suction sidewall 4-1.The method for obtaining the pixel class encapsulation structure A：
S1：The pixel unit device 2 of multiple proper alignments is obtained in the upper surface of reading circuit 1, and is covered with sacrificial layer 3,
The latticed groove that the sacrificial layer 3 obtains segmenting pixels is etched downwards, and the etching is deeply to the bottom end of sacrificial layer 3；
S2：Getter is filled into groove, is etched the getter along the middle part of groove, is obtained getter slot and air-breathing
The suction sidewall 4-1 on agent slot both sides, the etching is deeply to the bottom end of getter；
S3：Backing material is filled into getter slot, the backing material is etched downwards along the middle part of the groove, is obtained
The support construction 5 on 6 both sides of insulated trench 6 and insulated trench, as shown in Figure 1；
S4：The release channel that connection sacrificial layer 3 and 5 top of support construction are formed inside the support construction 5, in described
The upper surface of sacrificial layer 3 and suction sidewall 4-1 grows anti-reflection film 7 as shown in Figure 2, and the sacrifice is removed by the release channel
Layer 3, and further growth anti-reflection film 7 covers the top of the release channel, forms pixel class encapsulation structure A as shown in Figure 3.
Embodiment 2
As shown in figure 4, a kind of pixel class encapsulation structure B, including reading circuit 1 and positioned at the upper surface of reading circuit 1
Vacuum chamber array, the vacuum chamber array includes multiple vacuum chambers being spaced by insulated trench 6, is received in each vacuum chamber
It receives there are one pixel unit device 2, constitutes Pixel-level encapsulation unit, getter structure is provided in the internal side wall of the vacuum chamber
At suction sidewall 4-1, the region that the top of the vacuum chamber is located at other than the upright projection area of pixel is provided with air-breathing upper wall
4-2, the bottom of the vacuum chamber are provided with the air-breathing lower wall 4-3 of getter composition.Obtain the side of the pixel class encapsulation structure B
Method：
S1：Air-breathing lower wall 4-3 is grown in the upper surface of reading circuit 1, is obtained in the upper surface of air-breathing lower wall 4-3 multiple whole
The pixel unit device 2 arranged together, and it is covered with sacrificial layer 3, the sacrificial layer 3 is etched downwards obtains the ditch for dividing each pixel
Slot, the downward etching is deeply to the bottom end of sacrificial layer 3；
S2：Getter is filled into groove, is etched the getter along the middle part of groove, is obtained getter slot and air-breathing
The suction sidewall 4-1 on agent slot both sides, the etching is deeply to the bottom end of getter；
S3：Backing material is filled into getter slot, the backing material is etched downwards along the middle part of the groove, is obtained
The support construction 5 on 6 both sides of insulated trench 6 and insulated trench；
S4：The release channel that connection sacrificial layer 3 and 5 top of support construction are formed inside the support construction 5, described
Region etch shallow slot other than the pixel upright projection area of the upper surface of sacrificial layer 3 fills getter into shallow slot, obtains as schemed
Air-breathing upper wall 4-2 shown in 4 grows anti-reflection film 7 as shown in Figure 5, by the release in the upper surface of the air-breathing upper wall 4-2
Channel removes the sacrificial layer 3, and further growth anti-reflection film 7 covers the top of the release channel, is formed as shown in FIG. 6
Pixel class encapsulation structure B.
Fig. 7 is Pixel-level encapsulation unit.
Fig. 8 is multiple Pixel-level encapsulation units of proper alignment, and each adjacent two Pixel-level encapsulation unit is by insulated trench 6
Interval, each Pixel-level encapsulation unit includes suction sidewall 4-1, air-breathing upper wall 4-2, air-breathing lower wall 4-3, the suction sidewall 4-
1 is connected with air-breathing upper wall 4-2, air-breathing lower wall 4-3 respectively.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all within the spirits and principles of the present invention made by all any modification, equivalent and improvement etc., should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of pixel class encapsulation structure, including reading circuit and the vacuum chamber array positioned at the upper surface of reading circuit, institute
It includes multiple vacuum chambers divided by insulated trench to state vacuum chamber array, and there are one pixel units for storage in each vacuum chamber
Device constitutes Pixel-level encapsulation unit, which is characterized in that getter, the air-breathing are covered in the internal side wall of the vacuum chamber
Agent constitutes suction sidewall.
2. a kind of pixel class encapsulation structure as described in 1, which is characterized in that be sealed with anti-reflection film, institute at the top of the vacuum chamber
The lower surface for stating anti-reflection film is provided with the air-breathing upper wall of getter composition, and the air-breathing upper wall is vertical on anti-reflection film with pixel
Projected area is misaligned.
3. a kind of pixel class encapsulation structure as described in 2, which is characterized in that the bottom of the vacuum chamber is provided with getter composition
Air-breathing lower wall.
4. a kind of pixel class encapsulation structure as described in 3, which is characterized in that the suction sidewall respectively with air-breathing upper wall, air-breathing
Lower wall is connected.
5. a kind of pixel class encapsulation structure as described in 1~4 any one, which is characterized in that the exterior side wall of the vacuum chamber
Include the support housing with release channel, the first outlet of the release channel is connected to internal vacuum chamber, and second outlet is located at
The top of support housing, and covered by the anti-reflection film.
6. a kind of processing method of pixel class encapsulation structure, includes the following steps：
S1：The pixel unit device of multiple proper alignments is obtained in the upper surface of reading circuit, and is covered with sacrificial layer, described in etching
Sacrificial layer obtains the latticed groove of segmenting pixels, and the etching is deeply to the bottom end of sacrificial layer；
S2：Getter is filled into the groove, the getter is etched along the middle part of groove, obtains getter slot and air-breathing
The suction sidewall on agent slot both sides, the etching is deeply to the bottom end of getter；
S3：Backing material is filled into getter slot, the backing material is etched downwards along the middle part of the groove, is insulated
The support construction on groove and insulated trench both sides；
S4：Connection sacrificial layer and the release channel at the top of support construction are formed inside the support construction, in the sacrificial layer
Anti-reflection film is grown with the upper surface of suction sidewall, the sacrificial layer is removed from the release channel, blocks the release channel, obtain
Obtain pixel class encapsulation structure.
7. processing method as claimed in claim 6, which is characterized in that in the upper surface of reading circuit, acquisition is multiple in step S1
Further include before the pixel unit device of proper alignment：Getter is grown in the upper surface of reading circuit, forms air-breathing lower wall.
8. processing method as claimed in claim 6, which is characterized in that in the upper of the sacrificial layer and suction sidewall in step S1
Further include before surface growth anti-reflection film：Region etch other than the pixel upright projection area of the upper surface of the sacrificial layer is shallow
Slot fills getter in shallow slot, obtains air-breathing upper wall.
9. the processing method as described in any one of claim 6~8, which is characterized in that the method for the removal sacrificial layer
It is discharged for heat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711450808.XA CN108313973B (en) | 2017-12-27 | 2017-12-27 | Pixel-level packaging structure of uncooled infrared detector and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711450808.XA CN108313973B (en) | 2017-12-27 | 2017-12-27 | Pixel-level packaging structure of uncooled infrared detector and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108313973A true CN108313973A (en) | 2018-07-24 |
| CN108313973B CN108313973B (en) | 2020-05-26 |
Family
ID=62893461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711450808.XA Active CN108313973B (en) | 2017-12-27 | 2017-12-27 | Pixel-level packaging structure of uncooled infrared detector and processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108313973B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112499580A (en) * | 2020-11-05 | 2021-03-16 | 武汉鲲鹏微纳光电有限公司 | Uncooled infrared detector, chip and manufacturing method of chip |
| CN114203744A (en) * | 2022-02-15 | 2022-03-18 | 武汉高芯科技有限公司 | Non-refrigeration infrared detector with suspended getter and manufacturing method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202601616U (en) * | 2012-05-31 | 2012-12-12 | 苏州晶方半导体科技股份有限公司 | Infrared sensor packaging structure |
| CN102935994A (en) * | 2012-08-13 | 2013-02-20 | 武汉高德红外股份有限公司 | Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method |
| US20130087933A1 (en) * | 2011-10-11 | 2013-04-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure for encapsulating an electronic device and method for making such a structure |
| CN103359677A (en) * | 2012-03-29 | 2013-10-23 | 比亚迪股份有限公司 | Infrared detector packaging structure and manufacturing method thereof |
| US20130330878A1 (en) * | 2012-06-07 | 2013-12-12 | Texas Instruments Incorporated | Hermetically sealed mems device and method of fabrication |
| CN104022046A (en) * | 2014-06-13 | 2014-09-03 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on banding getter |
| CN105304505A (en) * | 2014-06-17 | 2016-02-03 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure |
| CN105449008A (en) * | 2014-07-10 | 2016-03-30 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN205133146U (en) * | 2015-11-17 | 2016-04-06 | 合肥芯福传感器技术有限公司 | High vacuum packaging structure of MEMS based on getter |
-
2017
- 2017-12-27 CN CN201711450808.XA patent/CN108313973B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087933A1 (en) * | 2011-10-11 | 2013-04-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure for encapsulating an electronic device and method for making such a structure |
| CN103359677A (en) * | 2012-03-29 | 2013-10-23 | 比亚迪股份有限公司 | Infrared detector packaging structure and manufacturing method thereof |
| CN202601616U (en) * | 2012-05-31 | 2012-12-12 | 苏州晶方半导体科技股份有限公司 | Infrared sensor packaging structure |
| US20130330878A1 (en) * | 2012-06-07 | 2013-12-12 | Texas Instruments Incorporated | Hermetically sealed mems device and method of fabrication |
| CN102935994A (en) * | 2012-08-13 | 2013-02-20 | 武汉高德红外股份有限公司 | Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method |
| CN104022046A (en) * | 2014-06-13 | 2014-09-03 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure based on banding getter |
| CN105304505A (en) * | 2014-06-17 | 2016-02-03 | 中国科学院上海微***与信息技术研究所 | Mixed wafer level vacuum packaging method and structure |
| CN105449008A (en) * | 2014-07-10 | 2016-03-30 | 上海巨哥电子科技有限公司 | Infrared sensor and packaging structure thereof and preparation method thereof |
| CN205133146U (en) * | 2015-11-17 | 2016-04-06 | 合肥芯福传感器技术有限公司 | High vacuum packaging structure of MEMS based on getter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112499580A (en) * | 2020-11-05 | 2021-03-16 | 武汉鲲鹏微纳光电有限公司 | Uncooled infrared detector, chip and manufacturing method of chip |
| CN112499580B (en) * | 2020-11-05 | 2024-03-26 | 武汉鲲鹏微纳光电有限公司 | Uncooled infrared detector, chip and manufacturing method of chip |
| CN114203744A (en) * | 2022-02-15 | 2022-03-18 | 武汉高芯科技有限公司 | Non-refrigeration infrared detector with suspended getter and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108313973B (en) | 2020-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108313973A (en) | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector | |
| CN103367382B (en) | A kind of wafer-level packaging method of image sensor chip | |
| CN102935994A (en) | Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method | |
| US8679886B2 (en) | Microelectronic device and MEMS package structure and fabricating method thereof | |
| CN102862947B (en) | A kind of MEMS and wafer-level vacuum encapsulating method thereof | |
| CN104637968B (en) | Using the imaging sensor and preparation method thereof of deep trench isolation | |
| CN103879952B (en) | The preparation method of MEMS component vacuum encapsulating structure | |
| CN103818868A (en) | Dual-pressure MEMS chip wafer level packaging method and dual-pressure MEMS chip thereof | |
| WO2005067047A3 (en) | An integral topside vaccum package | |
| CN102997959A (en) | Systems and methods for gettering an atomic sensor | |
| KR20210086510A (en) | Aluminum vapor chamber without tube sealing and manufacturing method thereof | |
| CN102209683A (en) | Mems devices | |
| KR20180122287A (en) | Electromagnetic radiation detector encapsulated by transfer of thin layer | |
| CN103818874A (en) | Novel packaging method of MEMS (Micro-electromechanical Systems) structure and processing circuit integrated system | |
| JP7247379B2 (en) | Wafer-scale image intensifier | |
| CN116835522A (en) | MEMS device and method of manufacturing the same | |
| CN103928409B (en) | A kind of integrated circuit back-off weldering air-tight packaging structure | |
| US20160096728A1 (en) | MEMS Chip and Manufacturing Method Thereof | |
| CN104795436A (en) | Wafer packaging structure, chip packaging structure and packaging method thereof | |
| US7507595B2 (en) | CMOS image sensor and method for fabricating the same | |
| CN106449778A (en) | Photoelectric coupler package structure used for large-scale integration | |
| CN205133146U (en) | High vacuum packaging structure of MEMS based on getter | |
| US10276338B2 (en) | Hollow fuse body with trench | |
| CN115065336A (en) | Filter and preparation method thereof | |
| CN105390408A (en) | Wafer structure and thinning method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |