CN202601616U - Infrared sensor packaging structure - Google Patents
Infrared sensor packaging structure Download PDFInfo
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- CN202601616U CN202601616U CN 201220252979 CN201220252979U CN202601616U CN 202601616 U CN202601616 U CN 202601616U CN 201220252979 CN201220252979 CN 201220252979 CN 201220252979 U CN201220252979 U CN 201220252979U CN 202601616 U CN202601616 U CN 202601616U
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- infrared sensor
- metal
- encapsulating structure
- metal layer
- sensitive zones
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Abstract
The utility model discloses an infrared sensor packaging structure. The infrared sensor packaging structure comprises a metal upper cover with a containing cavity and an infrared sensor chip, wherein a base plate and an annular metal layer are arranged on the metal upper cover. The base plate comprises an upper surface and a lower surface opposite to the upper surface, an annular first metal protruding block is arranged on the upper surface, the shape of the annular metal layer corresponds to the shape of the first metal protruding block, and the first metal protruding block is connected with the annular metal layer in bonding mode. A sensing region and a second metal protruding block are arranged on the infrared sensor chip, the second metal protruding block is arranged on the periphery of the sensing region and corresponds to the annular metal layer in shape, and the annular metal layer is connected with the second metal protruding block in bonding mode. According to the infrared sensor packaging structure, a wafer level packaging structure is adopted, and the infrared sensor packaging structure is simple in process and small in size after processing is finished.
Description
Technical field
The utility model belongs to the field of semiconductor manufacture technology, relates in particular to a kind of infrared sensor encapsulating structure.
Background technology
Along with development of semiconductor, the manufacturing technology of infrared sensor is showing improvement or progress day by day.Infrared sensor has been widely used in modern science and technology, national defence and industrial or agricultural field at present as a kind of typical sensor.
Existing infrared sensor encapsulation generally is the separate type individual packages, and its packaging technology is complicated, and cost is higher, and the encapsulating structure volume after the encapsulation completion is bigger.
The utility model content
The purpose of the utility model is to provide a kind of infrared sensor encapsulating structure.
For realizing above-mentioned utility model purpose, the utility model provides a kind of infrared sensor encapsulating structure, and said encapsulating structure comprises:
Metal top cover with host cavity; Said metal top cover comprises substrate and endless metal layer; Said substrate comprise upper surface and with the opposing lower surface of upper surface; Said upper surface is provided with first metal coupling of annular, and the shape of said endless metal layer is corresponding with said first metal coupling, and said first metal coupling and said endless metal layer bonding;
Infrared sensor chip comprises sensitive zones on it, and be arranged at said sensitive zones peripheral with the second corresponding metal coupling of said endless metal layer shape, said endless metal layer and the said second metal coupling bonding.
As the further improvement of the utility model, said lower surface is provided with optical thin film.
As the further improvement of the utility model, the host cavity inwall of said metal top cover is provided with getter.
As the further improvement of the utility model, be provided with semiconductor cooler with the opposing side surface of sensitive zones on the said infrared sensor chip.
As the further improvement of the utility model, also be provided with a plurality of metal columns in the said infrared sensor chip, this metal column one end electrically connects the weld pad that is positioned at sensitive zones one side, and the other end then is exposed to a side opposing with sensitive zones.
Compared with prior art, wafer-level packaging method has been adopted in the encapsulation of the utility model infrared sensor, and its technology is simple, and the encapsulating structure size after accomplishing is less.
Description of drawings
Fig. 1 is the structural representation of the utility model one execution mode infrared sensor encapsulating structure;
Fig. 2 is the structural representation of substrate in the utility model one execution mode infrared sensor encapsulating structure;
Fig. 3 is the structural representation that deposits metal in the utility model one execution mode infrared sensor encapsulating structure on the substrate;
Fig. 4 is the structural representation that is manufactured with first metal coupling in the utility model one execution mode infrared sensor encapsulating structure on the substrate;
Fig. 5 is the structural representation that the base lower surface in structure shown in Figure 4 is made optical thin film;
Fig. 6 is the structural representation of endless metal layer in the utility model one execution mode infrared sensor encapsulating structure;
Fig. 7 is the structural representation of metal top cover in the utility model one execution mode infrared sensor encapsulating structure;
Fig. 8 is the structural representation that is manufactured with second metal coupling in the utility model one execution mode infrared sensor encapsulating structure on the infrared sensor chip;
The structural representation that Fig. 9 structure shown in Figure 1 is connected with the external circuits plate;
Figure 10 is the structural representation that the another execution mode infrared sensor of the utility model encapsulating structure is connected with the external circuits plate;
Figure 11 is the flow chart of the utility model infrared sensor method for packing one execution mode.
Embodiment
Below will combine embodiment shown in the drawings that the utility model is described in detail.But these execution modes do not limit the utility model, and the conversion on the structure that those of ordinary skill in the art makes according to these execution modes, method or the function all is included in the protection range of the utility model.
Mentioned upper surface, the lower surface of the utility model do not have the absolute relation on the locus, and only is the convenience in order to describe.
Join shown in Figure 1ly, introduce an embodiment of the utility model infrared sensor encapsulating structure.In this execution mode, this encapsulating structure metal top cover 10 and infrared sensor chip 30.Wherein, this metal top cover 10 comprises substrate 11 and endless metal layer 16.
Ginseng Fig. 2, Fig. 3, Fig. 4, shown in Figure 5, substrate 11 comprise upper surface 11a and with the opposing lower surface 11b of upper surface 11a, the upper surface 11a of substrate 11 is provided with first metal coupling 121 of annular.The material of substrate 11 can be selected from the material that silicon, germanium or other permission infrared ray pass.The lower surface 11b of substrate 11 is coated with optical thin film 13, and in this execution mode, this optical thin film 13 can adopt infrared filter, and it can reduce ultrared reflectivity, improves penetrance.
Ginseng Fig. 6, shown in Figure 7, the shape of endless metal layer 16 is corresponding with first metal coupling 121, and substrate 11 has the metal top cover 10 of host cavity 15 through the common definition of first metal coupling 121 and these endless metal layer 16 bondings.In this execution mode, deposit getter 14 on host cavity 15 inwalls, after being used for absorbing encapsulation and accomplishing, a spot of antivacuum gas that the infrared sensing zone 31 on the infrared sensor chip 30 discharges.
Join shown in Figure 8ly, infrared sensor chip 30 comprises sensitive zones 31 and the weld pad 32 that electrically connects with sensitive zones 31.Be manufactured with second metal coupling 33 corresponding with endless metal layer 16 shape on outside the sensitive zones 31 of infrared sensor chip 30, metal top cover is through endless metal layer 16 and these second metal coupling, 33 bondings.Promptly be that this second metal coupling 33 comes down to be provided with around sensitive zones 31, in this execution mode, the position of second metal coupling 33 between sensitive zones 31 and weld pad 32, and the sensitive zones on the infrared sensor chip 30 31 is positioned at host cavity 15.
Join shown in Figure 9ly, as the utility model one execution mode, be provided with semiconductor cooler 40 with sensitive zones 31 opposing side surfaces on the infrared sensor chip 30, infrared sensor chip 30 is connected with external circuits plate 50 through this semiconductor cooler 40.This semiconductor cooler 40 is used for the temperature control of infrared sensor encapsulating structure, to guarantee the operate as normal of infrared sensor chip 30.In this execution mode, the mode through routing 60 between weld pad 32 and the external circuits plate 50 is connected, with the infrared sensor encapsulating structure of realizing the utility model and the electric connection of external circuits plate 50.
Join shown in Figure 10, another execution mode of the utility model infrared sensor encapsulating structure.Different with above-mentioned execution mode is; In this execution mode; Also be provided with a plurality of metal columns 34 in the infrared sensor chip 30, this metal column 34 1 ends electrically connect the weld pad 32 that is positioned at sensitive zones one side, and the other end then is exposed to a side opposing with sensitive zones 31; And be connected with metal ball 35 on it, the infrared sensor encapsulating structure electrically connects through this metal ball 35 and external circuits plate 50.The encapsulating structure of the more last embodiment of this embodiment encapsulating structure size compared is more microminiaturized.
Join Figure 11, introduce an execution mode of the method for packing of infrared sensor encapsulating structure in the utility model.
S1, a substrate 11 is provided, it comprise upper surface 11a and with the opposing lower surface 11b of upper surface 11a.The material of substrate 11 can be selected from the material that silicon, germanium or other permission infrared ray pass.Adopt the physical vapour deposition (PVD) mode to deposit layer of metal 12 at the upper surface 11a of this substrate 11,, form first metal coupling 121 of a plurality of annulars again through photoetching, plating, etching.Should be understood that said " annular " not only comprises circle, oval ring here, also can be polygon ring that for example comprises straight-flanked ring or even any enclosed etc.
S2, form optical thin film 13,, improve penetrance in order to reduce ultrared reflectivity at the lower surface of substrate 11.
S3, a metal substrate is provided, through photoetching, this metal substrate of etching to make and the corresponding a plurality of endless metal layers 16 of above-mentioned a plurality of first metal coupling, 121 shapes.At this moment, these a plurality of endless metal layers 16 still are positioned on the same metal substrate.
S4, substrate 11 is carried out bonding with a plurality of endless metal layers 16 through eutectic bonding technology respectively through a plurality of first metal couplings 121.At this moment, a plurality of first metal couplings 121, a plurality of endless metal layer 16 and substrate 11 have formed a plurality of metal top covers 10 jointly, have a host cavity 15 in this metal top cover 10.Then, the mode through chemical vapour deposition (CVD) deposits one deck getter 14 on host cavity 15 inwalls.
S5, a plurality of infrared sensor chips 30 are provided, all comprise sensitive zones 31 and the weld pad 32 that electrically connects with sensitive zones 31 on this infrared sensor chip 30.On this infrared sensor chip 30, form the said sensitive zones of encirclement respectively through physical vapour deposition (PVD), photoetching, etching, and second metal coupling 33 corresponding with endless metal layer 16 shape.After forming second metal coupling; Sensitive zones 31 micro mechanical structures discharge again on the infrared sensing chip 30; Concrete operations mode: cover the sensitive zones 31 of infrared sensor chip with one deck glue earlier; Treat that the formation of second metal coupling finishes, remove again and cover the lip-deep glue of sensitive zones that last sensitive zones micro mechanical structure discharges.
S6, through eutectic bonding technology respectively with endless metal layer 16 bonding of second metal coupling 33 on a plurality of infrared sensor chips 30 with metal top cover, so, sensitive zones on the infrared sensor chip 30 31 is packed to be advanced in the host cavity 15.
After the infrared sensor chip 30 of the utility model is accomplished encapsulation, need cutting substrate 11, to obtain the infrared sensor encapsulating structure that a plurality of independently encapsulation are accomplished.
What deserves to be mentioned is: if be not provided with metal column 34 in the said infrared sensor chip, then can pass through the routing mode, weld pad on the said infrared sensor chip and external circuits plate are electrically connected; If be provided with metal column 34 in the said infrared sensor chip; Then need be to carrying out attenuate with the opposing side surface of sensitive zones on the said infrared sensor chip; After exposing the metal column that electrically connects with the weld pad of said infrared sensing chip, electrically connect said external circuits plate through metal ball 35 again.
And, should be understood that, though in the execution mode of above-mentioned the utility model infrared sensor chip 30 method for packing; According to S1, S2 ... Order be described; But, not representing the relation that has absolute front and back order between described each step, those of ordinary skill in the art can be according to the utility model content of above-mentioned specification disclosure; Processing step in the embodiment is adjusted, and this kind must be worked as within the protection range that belongs to the utility model.
The utility model is through above-mentioned method for packing; After can handling substrate 11 earlier; Form a plurality of metal top covers 10 that are positioned on the same substrate; Again a plurality of infrared sensor chips 30 are packaged in respectively in the host cavity 15 corresponding in the metal top cover 10,, cut into a plurality of independently infrared sensor encapsulating structures at last to accomplish wafer-level packaging.This method is owing to adopted the method for packing of wafer scale, and its technology is simple, and package dimension is less relatively, and the packaging cost of product is lower.
Be to be understood that; Though this specification is described according to execution mode; But be not that each execution mode only comprises an independently technical scheme, this narrating mode of specification only is for clarity sake, and those skilled in the art should make specification as a whole; Technical scheme in each execution mode also can form other execution modes that it will be appreciated by those skilled in the art that through appropriate combination.
The listed a series of detailed description of preceding text only is specifying to the feasibility execution mode of the utility model; They are not the protection range in order to restriction the utility model, allly do not break away from equivalent execution mode or the change that the utility model skill spirit done and all should be included within the protection range of the utility model.
Claims (5)
1. an infrared sensor encapsulating structure is characterized in that, said encapsulating structure comprises:
Metal top cover with host cavity; Said metal top cover comprises substrate and endless metal layer; Said substrate comprise upper surface and with the opposing lower surface of upper surface; Said upper surface is provided with first metal coupling of annular, and the shape of said endless metal layer is corresponding with said first metal coupling, and said first metal coupling and said endless metal layer bonding;
Infrared sensor chip comprises sensitive zones on it, and be arranged at said sensitive zones peripheral with the second corresponding metal coupling of said endless metal layer shape, said endless metal layer and the said second metal coupling bonding.
2. infrared sensor encapsulating structure according to claim 1 is characterized in that said lower surface is provided with optical thin film.
3. infrared sensor encapsulating structure according to claim 1 is characterized in that, the host cavity inwall of said metal top cover is provided with getter.
4. infrared sensor encapsulating structure according to claim 1 is characterized in that, is provided with semiconductor cooler with the opposing side surface of sensitive zones on the said infrared sensor chip.
5. infrared sensor encapsulating structure according to claim 1; It is characterized in that; Also be provided with a plurality of metal columns in the said infrared sensor chip, this metal column one end electrically connects the weld pad that is positioned at sensitive zones one side, and the other end then is exposed to a side opposing with sensitive zones.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220252979 CN202601616U (en) | 2012-05-31 | 2012-05-31 | Infrared sensor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220252979 CN202601616U (en) | 2012-05-31 | 2012-05-31 | Infrared sensor packaging structure |
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|---|---|
| CN202601616U true CN202601616U (en) | 2012-12-12 |
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| CN 201220252979 Expired - Lifetime CN202601616U (en) | 2012-05-31 | 2012-05-31 | Infrared sensor packaging structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723345A (en) * | 2012-05-31 | 2012-10-10 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method for infrared sensors |
| CN104302102A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Infrared focal plane sensor non-packaging application method |
| CN106249372A (en) * | 2016-09-18 | 2016-12-21 | 上海晶鼎光电科技有限公司 | A kind of wafer scale integrated optics window and preparation method thereof |
| CN108313973A (en) * | 2017-12-27 | 2018-07-24 | 武汉高德红外股份有限公司 | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector |
| CN108663487A (en) * | 2018-06-13 | 2018-10-16 | 佛山市澄澜点寸科技有限公司 | A kind of gas sensor |
-
2012
- 2012-05-31 CN CN 201220252979 patent/CN202601616U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723345A (en) * | 2012-05-31 | 2012-10-10 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method for infrared sensors |
| CN102723345B (en) * | 2012-05-31 | 2015-04-01 | 苏州晶方半导体科技股份有限公司 | Packaging structure and packaging method for infrared sensors |
| CN104302102A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Infrared focal plane sensor non-packaging application method |
| CN106249372A (en) * | 2016-09-18 | 2016-12-21 | 上海晶鼎光电科技有限公司 | A kind of wafer scale integrated optics window and preparation method thereof |
| CN108313973A (en) * | 2017-12-27 | 2018-07-24 | 武汉高德红外股份有限公司 | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector |
| CN108663487A (en) * | 2018-06-13 | 2018-10-16 | 佛山市澄澜点寸科技有限公司 | A kind of gas sensor |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121212 |