CN108290772A - 玻璃 - Google Patents
玻璃 Download PDFInfo
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- CN108290772A CN108290772A CN201780004215.2A CN201780004215A CN108290772A CN 108290772 A CN108290772 A CN 108290772A CN 201780004215 A CN201780004215 A CN 201780004215A CN 108290772 A CN108290772 A CN 108290772A
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- 239000011521 glass Substances 0.000 title claims abstract description 122
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract description 21
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 19
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims abstract description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 17
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 22
- 238000004031 devitrification Methods 0.000 description 21
- 239000004615 ingredient Substances 0.000 description 16
- 238000002844 melting Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 16
- 238000002425 crystallisation Methods 0.000 description 14
- 230000008025 crystallization Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000011819 refractory material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 239000006066 glass batch Substances 0.000 description 4
- 238000010309 melting process Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910019603 Rh2O3 Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000006025 fining agent Substances 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005352 clarification Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
本发明的玻璃,其特征在于,作为玻璃组成,以摩尔%计含有SiO2 60%~80%、Al2O3 12%~25%、B2O3 0%~3%、Li2O+Na2O+K2O 0%~3%、MgO+CaO+SrO+BaO 5%~25%、P2O5 0.1%~10%,且应变点高于730℃。
Description
技术领域
本发明涉及一种高耐热性的玻璃,例如涉及用于在高温下制作LED用半导体晶体的玻璃基板。
背景技术
已知LED等中所使用的半导体晶体越是在高温下成膜,半导体特性越提高。
在该用途中,一般使用高耐热性的蓝宝石基板。即使在其他的用途中,在以高温(例如700℃以上)成膜半导体晶体的情况下,使用蓝宝石基板。
现有技术文献
专利文献
专利文献1:日本特开平11-243229号公报
发明内容
发明要解决的课题
但是,近年来,活跃地研究了成膜大面积的半导体晶体的技术。认为该技术还有望作为大型显示器的面发光光源。
但是,蓝宝石基板难以大面积化,不适合于上述用途。
若代替蓝宝石而使用玻璃,则认为可以将基板大面积化,但是,以往的玻璃基板由于耐热性不充分,因此在高温的热处理中容易发生热变形。
另外,耐热性高的玻璃的耐失透性不充分,难以成形为平板形状的玻璃基板。
本发明为鉴于上述情况完成的发明,其技术课题在于发明耐热性高、而且能够成形为平板形状的玻璃。
用于解决课题的手段
本发明人反复进行了各种实验,结果发现可以通过将玻璃组成和玻璃特性限制为规定范围来解决上述技术课题,从而提出本发明。即,本发明的玻璃,其特征在于,以摩尔%计含有SiO2 60~80%、Al2O3 12~25%、B2O3 0~3%、Li2O+Na2O+K2O 0~3%、MgO+CaO+SrO+BaO 5~25%、P2O5 0.1~10%作为玻璃组成,且应变点高于730℃。在此,“Li2O+Na2O+K2O”是指Li2O、Na2O及K2O的总量。“MgO+CaO+SrO+BaO”是指MgO、CaO、SrO及BaO的总量。“应变点”是指基于ASTM C336的方法测定得到的值。
本发明的玻璃在玻璃组成中将Al2O3限制为12摩尔%以上、将B2O3的含量限制为3摩尔%以下且将Li2O+Na2O+K2O的含量限制为3摩尔%以下。这样一来,应变点显著上升,可以大幅提高玻璃基板的耐热性。
另外,本发明的玻璃在玻璃组成中包含5~25摩尔%的MgO+CaO+SrO+BaO且包含0.1~10摩尔%的P2O5。这样一来,可以在维持耐热性的基础上提高耐失透性。
第二,本发明的玻璃优选使B2O3的含量不足1摩尔%。
第三,本发明的玻璃优选使Li2O+Na2O+K2O的含量为0.2摩尔%以下。
第四,本发明的玻璃优选使摩尔比(MgO+CaO+SrO+BaO)/Al2O3为0.5~3。在此,“(MgO+CaO+SrO+BaO)/Al2O3”是指MgO、CaO、SrO及BaO的总量除以Al2O3的含量所得的值。
第五,本发明的玻璃优选使应变点为760℃以上。
第六,本发明的玻璃优选使(高温粘度102.5dPa·s时的温度-应变点)为980℃以下。在此,“高温粘度102.5dPa·s时的温度”是指利用铂球上拉法测定得到的值。
第七,本发明的玻璃优选使高温粘度102.5dPa·s时的温度为1750℃以下。
第八,本发明的玻璃优选为平板形状。
第九,本发明的玻璃优选用于为了制作半导体晶体的基板中。
具体实施方式
本发明的玻璃,其特征在于,以摩尔%计含有SiO2 60~80%、Al2O3 12~25%、B2O30~3%、Li2O+Na2O+K2O 0~3%、MgO+CaO+SrO+BaO 5~25%、P2O5 0.1~10%作为玻璃组成,且应变点高于730℃。如上所述,以下对限制各成分的含量的理由进行说明。予以说明,在各成分的说明中,下述的%表示是指摩尔%。
SiO2的适合的下限范围为60%以上、63%以上、65%以上、67%以上,特别为68%以上,适合的上限范围优选为80%以下、75%以下、73%以下,特别优选为71%以下。若SiO2的含量过少,则容易产生包含Al2O3的失透结晶,并且应变点容易降低。另一方面,若SiO2的含量过多,则高温粘度变高,熔融性容易降低,进而容易产生包含SiO2的失透结晶。
Al2O3的适合的下限范围为12%以上、13%以上,特别为14%以上,适合的上限范围为25%以下、20%以下、18%以下,特别为17%以下。若Al2O3的含量过少,则应变点容易降低。另一方面,若Al2O3的含量过多,则容易产生包含Al2O3的失透结晶。
B2O3的适合的上限范围为3%以下、1%以下、不足1%、0.5%以下,特别为0.1%以下。若B2O3的含量过多,则存在应变点大幅降低的风险。
Li2O+Na2O+K2O的适合的上限范围为3%以下、1%以下、不足1%、0.5%以下,特别为0.2%以下。若Li2O+Na2O+K2O的含量过多,则碱离子扩散到半导体物质中,半导体特性容易降低。予以说明,Li2O、Na2O及K2O的适合的上限范围分别为3%以下、1%以下、不足1%、0.5%以下、0.3%以下,特别为0.2%以下。予以说明,Li2O、Na2O及K2O为作为原料杂质而不可避免地混入的成分,若考虑到原料成本,则优选将Li2O+Na2O+K2O的含量限制为0.01%以上、特别为0.02%以上。
MgO+CaO+SrO+BaO的适合的下限范围为5%以上、7%以上、8%以上、10%以上、12%以上,特别为14%以上,适合的上限范围为25%以下、20%以下、18%以下,特别为17%以下。若MgO+CaO+SrO+BaO的含量过少,则液相温度大幅上升,在玻璃中容易产生失透结晶。另一方面,若MgO+CaO+SrO+BaO的含量过多,则应变点容易降低。
在兼顾应变点的上升和熔融性的降低的情况下,(MgO+CaO+SrO+BaO)/Al2O3的适合的下限范围为0.5以上、0.6以上、0.7以上、0.8以上,特别为0.9以上,适合的上限范围为3以下、2以下、1.5以下、1.2以下、1.1以下。
MgO的适合的下限范围为0%以上、1%以上、2%以上,特别为3%以上,适合的上限范围为10%以下、9%以下、8%以下,特别为7%以下。若MgO的含量过少,则熔融性或杨氏模量容易降低。另一方面,若MgO的含量过多,则促进包含Al2O3的失透结晶(特别是莫来石)的生成,导致使液相粘度降低。进而应变点容易降低。予以说明,MgO虽然使热膨胀系数上升而具有使所成膜的材料与热膨胀系数匹配的效果,但是其效果在碱土氧化物中最小。
CaO的适合的下限范围为0%以上、3%以上、5%以上、7%以上,特别为9%以上,适合的上限范围为25%以下、20%以下,特别为15%以下。若CaO的含量过少,则熔融性容易降低。另一方面,若CaO的含量过多,则液相温度上升而在玻璃中容易产生失透结晶。
与其他的碱土氧化物相比,CaO不使应变点降低而改善液相粘度的效果或提高熔融性的效果较大,并且相比于MgO而使热膨胀系数上升的效果较大。因此,在碱土氧化物中,优选优先引入CaO,摩尔比CaO/(MgO+CaO+SrO+BaO)的适合的下限范围为0.5以上、0.6以上、0.7以上、0.8以上,特别为0.9以上。予以说明,“CaO/(MgO+CaO+SrO+BaO)”是指CaO的含量除以MgO、CaO、SrO及BaO的总量所得的值。
SrO的适合的下限范围为0%以上、2%以上、4%以上,特别为6%以上,适合的上限范围为15%以下、12%以下,特别为10%以下。若SrO的含量过少,则应变点容易降低。另一方面,若SrO的含量过多,则液相温度上升而在玻璃中容易产生失透结晶。另外,熔融性容易降低。予以说明,与MgO或CaO相比,SrO使热膨胀系数上升的效果较大。
BaO的适合的下限范围为0%以上、0.1%以上、1%以上、3%以上、5%以上,特别为7%以上,适合的上限范围为20%以下、17%以下、14%以下、12%以下,特别为10%以下。若BaO的含量过少,则应变点或热膨胀系数容易降低。另一方面,若BaO的含量过多,则液相温度上升而在玻璃中容易产生失透结晶。另外,熔融性容易降低。予以说明,在碱土金属氧化物中,BaO使热膨胀系数或应变点上升的效果最大。
P2O5的适合的下限范围为0.1%以上、1%以上、2%以上、3%以上,特别为4%以上,适合的上限范围为10%以下、8%以下,特别为6%以下。P2O5对于抑制包含碱土元素的失透结晶的析出有效果,进而,与碱土金属氧化物相比,对抑制应变点的降低更有效果。另一方面,若过量地引入P2O5,则玻璃容易分相,并且容易析出不包含碱土元素的失透结晶。
为了提高应变点,P2O5的含量优选多于B2O3的含量,更优选比B2O3的含量多1%以上,进一步优选比B2O3的含量多3%以上。
为了兼顾熔融玻璃的电阻率的降低和应变点的上升,摩尔比(Li2O+Na2O+K2O)/P2O5优选为0.001~0.05,特别优选为0.01~0.03。还有,(Li2O+Na2O+K2O)/P2O5是指P2O5的含量除以Li2O、Na2O和K2O的总量的值。
为了提高耐失透性,P2O5的含量优选多于MgO的含量,更优选比MgO的含量多1%以上,进一步优选比MgO的含量多3%以上。
为了提高耐失透性,P2O5的含量优选多于SrO的含量,更优选比SrO的含量多1%以上,进一步优选比SrO的含量多3%以上。
除上述成分以外,还可以将以下的成分引入到玻璃组成中。
ZnO是提高熔融性的成分,但是,若在玻璃组成中大量地含有ZnO,则玻璃容易失透,并且应变点容易降低。因此,ZnO的含量优选为0~5%、0~3%、0~0.5%、0~0.3%,特别优选为0~0.1%。
ZrO2是提高杨氏模量的成分。ZrO2的含量优选为0~5%、0~3%、0~0.5%、0~0.2%,特别优选为0~0.02%。若ZrO2的含量过多,则液相温度上升而容易析出锆石的失透结晶。
TiO2是降低高温粘性而提高熔融性的成分,并且是抑制曝晒作用(solarization)的成分,但是,若在玻璃组成中大量地含有TiO2,则玻璃容易着色。因此,TiO2的含量优选为0~5%、0~3%、0~1%、0~0.1%,特别优选为0~0.02%。
SnO2是在高温区域具有良好的澄清作用的成分,并且是使高温粘性降低的成分。SnO2的含量优选为0~1%、0.01~0.5%、0.01~0.3%,特别优选为0.04~0.1%。若SnO2的含量过多,则容易析出SnO2的失透结晶。
只要不损害玻璃特性,作为澄清剂,可以添加高达1%的CeO2、SO3、C、金属粉末(例如Al、Si等)。
As2O3、Sb2O3、F、Cl也有效地作为澄清剂发挥作用,本发明的玻璃并不排除含有这些成分,但是从环境的观点出发,这些成分的含量分别优选不足0.1%,特别优选不足0.05%。
在包含0.01~0.5%的SnO2的情况下,若Rh2O3的含量过多,则玻璃容易着色。予以说明,Rh2O3具有从铂的制造容器混入的可能性。Rh2O3的含量优选为0~0.0005%,特别优选为0.00001~0.0001%。
SO3是作为杂质从原料混入的成分,但是,若SO3的含量过多,则在熔融或成形时产生被称作再沸的泡,存在在玻璃中产生缺陷的风险。SO3的适合的下限范围为0.0001%以上,适合的上限范围为0.005%以下、0.003%以下、0.002%以下,特别为0.001%以下。
稀土氧化物的含量优选不足2%、1%以下、0.5%以下,特别优选不足0.1%。若稀土氧化物的含量过多,则批料成本容易增加。
铁是作为杂质从原料混入的成分,但是,若铁的含量过多,则存在透射率、特别是紫外线透射率降低的风险。因此,铁的适合的下限范围换算成Fe2O3为0.001%以上,适合的上限范围换算成Fe2O3为0.05%以下、0.04%以下、0.03%以下、0.02%以下、0.01%以下,特别为不足0.01%。
本发明的玻璃优选具有以下的特性。
应变点优选为超过730℃、740℃以上、750℃以上、760℃以上、770℃以上、780℃以上、790℃以上,特别优选为800℃以上。应变点越低,耐热性越容易降低。
在30~380℃的温度范围的热膨胀系数优选与所成膜的材料的热膨胀系数接近。具体而言,若为成膜氮化镓系的半导体晶体的情况,则优选为40×10-7/℃以上、42×10-7/℃以上,特别优选为44×10-7/℃以上。另外,在成膜a-Si、p-Si等的情况下,期望使热膨胀系数为30×10-7以上且不足40×10-7/℃。予以说明,“在30~380℃的温度范围的热膨胀系数”是指利用热膨胀仪测定得到的平均值。
当在玻璃基板上形成半导体元件并且将其用于电子器件的情况下,电子器件的轻质化较为重要,对玻璃也要求轻质化。为了满足该要求,期望基于低密度化的玻璃基板的轻质化。密度优选为3.20g/cm3以下、3.00g/cm3以下、2.90g/cm3以下,特别优选为2.80g/cm3以下。
高应变点的玻璃一般难以熔融,因此提高熔融性成为课题。若提高熔融性,则减轻由泡、异物等所致的不良率,因此可以大量且廉价地供给高品质的玻璃基板。因此,高温粘度102.5dPa·s时的温度优选为1750℃以下、1720℃以下、1700℃以下、1680℃以下,特别优选为1670℃以下。予以说明,高温粘度102.5dPa·s时的温度相当于熔融温度,该温度越低,熔融性越优异。
在以下拉法等成形为平板形状的情况下,耐失透性较为重要。若考虑本发明的玻璃体系的成形温度,则液相温度优选为1350℃下、1300℃以下、1260℃以下,特别优选为1230℃以下。另外,液相粘度优选为103.6dPa·s以上、104.0dPa·s以上、104.5dPa·s以上,特别优选为105.0dPa·s以上。在此,“液相温度”是指:将通过标准筛30目(500μm)并残留于50目(300μm)的玻璃粉末加入铂舟中,在梯温炉中保持24小时,测定结晶析出的温度所得的值。“液相粘度”是指利用铂球上拉法对液相温度下的玻璃的粘度测定得到的值。
本发明的玻璃优选在玻璃内部具有成形合流面、即利用溢流下拉法成形而成。溢流下拉法为以下方法:使熔融玻璃从楔形的耐火物的两侧溢出,边使所溢出的熔融玻璃在楔形的下端合流,边向下方拉伸成形而成形为平板形状。在溢流下拉法中,玻璃基板的应该成为表面的面不与耐火物接触而以自由表面的状态被成形。因此,在未研磨下便能廉价地制造表面品质良好的玻璃基板,大面积化和薄壁化也较为容易。
除溢流下拉法以外,还可以以例如流孔下引法、重新下引法、浮法、轧平法来成形玻璃基板。
在本发明的玻璃中,壁厚(在平板形状的情况下为板厚)并无特别限定,但优选为1.0mm以下、0.7mm以下、0.5mm以下,特别优选为0.4mm以下。板厚越小,器件越容易轻质化。予以说明,壁厚可以利用玻璃制造时的流量或板牵引速度等来进行调整。
在本发明的玻璃中,若使β-OH值降低,则可以提高应变点。β-OH值优选为0.40/mm以下、0.35/mm以下、0.30/mm以下、0.25/mm以下、0.20/mm以下,特别优选为0.15/mm以下。若β-OH值过大,则应变点容易降低。予以说明,若β-OH值越小,则熔融性容易降低。因此,β-OH值优选为0.01/mm以上,特别优选为0.05/mm以上。
作为使β-OH值降低的方法,可列举以下的方法。(1)选择含水量低的原料。(2)添加使玻璃中的水分量减少的成分(Cl、SO3等)。(3)使炉内气氛中的水分量降低。(4)在熔融玻璃中进行N2鼓泡。(5)采用小型熔融炉。(6)加快熔融玻璃的流量。(7)采用电熔融法。
在此,“β-OH值”是指:使用FT-IR测定玻璃的透射率,并使用下述的式而求得的值。
β-OH值=(1/X)log(T1/T2)
X:玻璃壁厚(mm)
T1:在参照波长3846cm-1下的透射率(%)
T2:在羟基吸收波长3600cm-1附近的最小透射率(%)
作为以工业规模制造本发明的玻璃的方法,优选:以摩尔%计含有SiO2 60~80%、Al2O3 12~25%、B2O3 0~3%、Li2O+Na2O+K2O 0~3%、MgO+CaO+SrO+BaO 5~25%、P2O5 0.1~10%作为玻璃组成,β-OH基为0.40/mm以下且应变点高于730℃的玻璃基板的制造方法,该制造方法具有通过将所调合的玻璃批料供给至熔融炉、并进行基于加热电极的通电加热而得到熔融玻璃的熔融工序和将所得的熔融玻璃利用溢流下拉法成形为板厚0.1~0.7mm的平板形状的玻璃的成形工序。
玻璃基板的制造工序一般包含熔融工序、澄清工序、供给工序、搅拌工序、成形工序。熔融工序为将调合有玻璃原料的玻璃批料熔融而得到熔融玻璃的工序。澄清工序为利用澄清剂等的作用使熔融工序中所得的熔融玻璃澄清的工序。供给工序为在各工序间移送熔融玻璃的工序。搅拌工序为将熔融玻璃搅拌并均质化的工序。成形工序为将熔融玻璃成形为平板形状的玻璃的工序。予以说明,也可以根据需要在搅拌工序后采取除上述以外的工序、例如将熔融玻璃调节为适合于成形的状态的状态调节工序。
在以工业规模制造以往的无碱玻璃及低碱玻璃的情况下,一般通过基于燃烧器的燃烧火焰的加热而使其熔融。燃烧器通常配置在熔融窑的上方,并且使用化石燃料、具体而言为重油等液体燃料、LPG等气体燃料等作为燃料。燃烧火焰可以通过将化石燃料和氧气混合而得到。但是,在该方法中,由于在熔融时在熔融玻璃中混入大量的水分,因此β-OH值容易上升。因此,在制造本发明的玻璃基板时,优选进行基于加热电极的通电加热,进一步优选不进行基于燃烧器的燃烧火焰的加热而仅利用基于加热电极的通电加热使其熔融。由此,在熔融时水分难以混入到熔融玻璃中,因此容易将β-OH值限制为0.40/mm以下、0.30/mm以下、0.20/mm以下,特别是0.15/mm以下。进而,若进行基于加热电极的通电加热,则用于得到熔融玻璃的每单位质量的能量降低,并且熔融挥发物变少,因此可以降低环境负荷。
基于加热电极的通电加热优选通过以与熔融窑内的熔融玻璃接触的方式对设置于熔融窑的底部或侧部的加热电极施加交流电压来进行。加热电极中使用的材料优选具备耐热性和对熔融玻璃的耐腐蚀性的材料,例如可以使用氧化锡、钼、铂、铑等。
无碱玻璃及低碱玻璃由于碱金属氧化物少,因此电阻率高。因此,在将基于加热电极的通电加热应用于这些玻璃的情况下,不仅熔融玻璃中流入电流,而且在构成熔融窑的耐火物中也流入电流,存在构成熔融窑的耐火物早期受到损伤的风险。为了防止该风险,作为炉内耐火物,优选使用电阻率高的氧化锆系耐火物、尤其是氧化锆电铸砖,另外,优选在熔融玻璃(玻璃组成)中少量引入使电阻率降低的成分(Li2O、Na2O、K2O、Fe2O3等),特别优选引入以总量计为0.01~1摩尔%、0.02~0.5摩尔%、0.03~0.4摩尔%、0.05~0.3摩尔%、特别是0.07~0.2摩尔%的Li2O、Na2O及K2O。进而,氧化锆系耐火物中的ZrO2的含量优选为85质量%以上,特别优选为90质量%以上。予以说明,若Li2O、Na2O及K2O的引入量以总量计为0.2质量%以下,则没有引起由碱离子的扩散所致的半导体物质的污染的风险。
实施例
以下,基于实施例对本发明进行详细地说明。予以说明,以下的实施例仅仅为例示。本发明并不受以下的实施例的任何限定。
表1示出本发明的实施例(试样No.1~22)。
【表1】
[表1]
如以下那样制作各试样。首先,以成为表中的玻璃组成的方式将调合有玻璃原料的玻璃批料加入到铂坩埚中,在1600~1750℃下熔融24小时。在玻璃批料的熔解时,使用铂搅拌器进行搅拌,进行均质化。接着,将熔融玻璃流出至碳板上,成形为平板形状。对所得的各试样评价了密度ρ、热膨胀系数α、应变点Ps、退火点Ta、软化点Ts、高温粘度104.0dPa·s时的温度、高温粘度103.0dPa·s时的温度、高温粘度102.5dPa·s时的温度、液相温度TL、液相粘度logηTL及β-OH值。
密度ρ为利用公知的阿基米德法测定得到的值。
热膨胀系数α为在30~380℃的温度范围内利用热膨胀仪测定得到的平均值。
应变点Ps、退火点Ta、软化点Ts为依据ASTM C336或ASTM C338测定得到的值。
高温粘度104.0dPa·s时的温度、高温粘度103.0dPa·s时的温度、高温粘度102.5dPa·s时的温度为利用铂球上拉法测定得到的值。
液相温度TL为:将各试样粉碎,并且将通过标准筛30目(500μm)且残留于50目(300μm)的玻璃粉末加入到铂舟中,在梯温炉中保持24小时后,取出铂舟,并且在玻璃中确认到失透(失透结晶)的温度。液相粘度logηTL为利用铂球上拉法对液相温度TL下的玻璃的粘度测定得到的值。
β-OH值为根据上述式计算得到的值。
由表1可以明确:就试样No.1~22而言,耐热性高,而且具备能够成形为平板形状的耐失透性。因此,认为试样No.1~22适合作为用于以高温制作LED用半导体晶体的玻璃基板。
产业上的可利用性
就本发明的玻璃而言,其耐热性高,而且具备能够成形为平板形状的耐失透性。因此,本发明的玻璃适合作为用于以高温制作LED用半导体晶体的玻璃基板。进而,本发明的玻璃除上述用途以外还适合于液晶显示器等显示器用基板,尤其适合作为以LTPS、氧化物TFT驱动的显示器用基板。
Claims (9)
1.一种玻璃,其特征在于,以摩尔%计含有SiO2 60%~80%、Al2O3 12%~25%、B2O30%~3%、Li2O+Na2O+K2O 0%~3%、MgO+CaO+SrO+BaO 5%~25%、P2O5 0.1%~10%作为玻璃组成,且应变点高于730℃。
2.根据权利要求1所述的玻璃,其特征在于,B2O3的含量不足1摩尔%。
3.根据权利要求1或2所述的玻璃,其特征在于,Li2O+Na2O+K2O的含量为0.2摩尔%以下。
4.根据权利要求1~3中任一项所述的玻璃,其特征在于,摩尔比(MgO+CaO+SrO+BaO)/Al2O3为0.5~3。
5.根据权利要求1~4中任一项所述的玻璃,其特征在于,应变点为760℃以上。
6.根据权利要求1~5中任一项所述的玻璃,其特征在于,(高温粘度102.5dPa·s时的温度-应变点)为980℃以下。
7.根据权利要求1~6中任一项所述的玻璃,其特征在于,高温粘度102.5dPa·s时的温度为1750℃以下。
8.根据权利要求1~7中任一项所述的玻璃,其特征在于,其为平板形状。
9.根据权利要求1~8中任一项所述的玻璃,其特征在于,其用于为了制作半导体晶体的基板中。
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CN112703173A (zh) * | 2018-08-30 | 2021-04-23 | 康宁股份有限公司 | 用于层叠体的软的可化学强化玻璃 |
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JP7001987B2 (ja) * | 2017-04-27 | 2022-01-20 | 日本電気硝子株式会社 | ガラス基板 |
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CN111630010A (zh) * | 2018-01-23 | 2020-09-04 | 日本电气硝子株式会社 | 玻璃基板及其制造方法 |
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WO2019181707A1 (ja) * | 2018-03-20 | 2019-09-26 | Agc株式会社 | ガラス基板、液晶アンテナ及び高周波デバイス |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01126239A (ja) * | 1987-11-11 | 1989-05-18 | Nippon Sheet Glass Co Ltd | 電子機器用ガラス基板 |
CN102471134A (zh) * | 2009-07-02 | 2012-05-23 | 旭硝子株式会社 | 无碱玻璃及其制造方法 |
CN103080031A (zh) * | 2011-07-01 | 2013-05-01 | 安瀚视特控股株式会社 | 平面显示器用玻璃基板及其制造方法 |
CN103492333A (zh) * | 2011-04-25 | 2014-01-01 | 日本电气硝子株式会社 | 液晶透镜用玻璃基板 |
TW201444781A (zh) * | 2013-05-09 | 2014-12-01 | Corning Inc | 不含鹼之磷硼矽酸鹽玻璃 |
WO2015056645A1 (ja) * | 2013-10-17 | 2015-04-23 | 日本電気硝子株式会社 | 無アルカリガラス |
CN104619663A (zh) * | 2012-12-14 | 2015-05-13 | 日本电气硝子株式会社 | 玻璃和玻璃基板 |
CN105121374A (zh) * | 2013-07-11 | 2015-12-02 | 日本电气硝子株式会社 | 玻璃 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57191251A (en) | 1981-05-19 | 1982-11-25 | Nippon Electric Glass Co Ltd | Glass composition |
US5968857A (en) * | 1997-03-31 | 1999-10-19 | Corning Incorporated | Glass-ceramics |
JP3577974B2 (ja) | 1997-12-02 | 2004-10-20 | 株式会社村田製作所 | 半導体発光素子、およびその製造方法 |
JP5638755B2 (ja) | 2005-08-17 | 2014-12-10 | コーニング インコーポレイテッド | 高歪点ガラス |
US9346699B2 (en) | 2008-10-06 | 2016-05-24 | Corning Incorporated | Method of making a glass laminate having controlled strength |
JP6562240B2 (ja) | 2014-02-28 | 2019-08-21 | 日本電気硝子株式会社 | 珪酸塩ガラスの製造方法及び珪酸塩ガラス用シリカ原料 |
KR20180015611A (ko) * | 2015-06-02 | 2018-02-13 | 니폰 덴키 가라스 가부시키가이샤 | 유리 |
-
2016
- 2016-12-30 TW TW105144089A patent/TWI714698B/zh active
-
2017
- 2017-01-05 KR KR1020187014646A patent/KR20180102543A/ko not_active Application Discontinuation
- 2017-01-05 JP JP2017561595A patent/JP7197978B2/ja active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01126239A (ja) * | 1987-11-11 | 1989-05-18 | Nippon Sheet Glass Co Ltd | 電子機器用ガラス基板 |
CN102471134A (zh) * | 2009-07-02 | 2012-05-23 | 旭硝子株式会社 | 无碱玻璃及其制造方法 |
CN103492333A (zh) * | 2011-04-25 | 2014-01-01 | 日本电气硝子株式会社 | 液晶透镜用玻璃基板 |
CN103080031A (zh) * | 2011-07-01 | 2013-05-01 | 安瀚视特控股株式会社 | 平面显示器用玻璃基板及其制造方法 |
CN104619663A (zh) * | 2012-12-14 | 2015-05-13 | 日本电气硝子株式会社 | 玻璃和玻璃基板 |
TW201444781A (zh) * | 2013-05-09 | 2014-12-01 | Corning Inc | 不含鹼之磷硼矽酸鹽玻璃 |
CN105121374A (zh) * | 2013-07-11 | 2015-12-02 | 日本电气硝子株式会社 | 玻璃 |
WO2015056645A1 (ja) * | 2013-10-17 | 2015-04-23 | 日本電気硝子株式会社 | 無アルカリガラス |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112703173A (zh) * | 2018-08-30 | 2021-04-23 | 康宁股份有限公司 | 用于层叠体的软的可化学强化玻璃 |
CN111253066A (zh) * | 2018-12-03 | 2020-06-09 | 成都光明光电股份有限公司 | 光学玻璃、光学预制件、光学元件和光学仪器 |
CN113165949A (zh) * | 2018-12-10 | 2021-07-23 | 日本电气硝子株式会社 | 无碱玻璃 |
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