CN1080931C - 用于生产半导体封装引线框架的工艺 - Google Patents

用于生产半导体封装引线框架的工艺 Download PDF

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CN1080931C
CN1080931C CN95119249A CN95119249A CN1080931C CN 1080931 C CN1080931 C CN 1080931C CN 95119249 A CN95119249 A CN 95119249A CN 95119249 A CN95119249 A CN 95119249A CN 1080931 C CN1080931 C CN 1080931C
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lead frame
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polyamide acid
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CN1142122A (zh
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金尚勋
沈成珉
洪仁杓
李相国
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Samsung Electronics Co Ltd
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Abstract

本发明提供一种生产具有焊盘、一些内侧引线、外部引线和防流护栏的引线框架的工艺。所述的焊盘在其背面被以一种膜，这个工艺具有下述工序：制备一个包括一个焊盘，一些内侧引线和外侧引线的引线框架；不用胶粘剂把聚酰胺酸膜放到焊盘的背面上；用热产生器热压缩聚酰胺酸膜以形成聚酰亚胺膜，同时将之附着到焊盘的背面上。

Description

用于生产半导体封装引线框架的工艺
本发明一般说涉及用于生产半导体封装的引线框架的工艺，特别涉及这样一种用于生产半导体封装的引线框架的工艺：这种引线框架的焊盘(pad)的背面被以聚酰亚胺(polyimide)薄膜以防止在包含有引线框架的电子器件用制模化合物封起来之后制模化合物从焊盘上剥离开来(或分离开来)。
引线框架被用于封装诸如晶体管或集成电路等半导体器件，这些器件被安装到引线框架的焊盘上，然后被密封起来。引线框架由引线框架焊盘、引线和防流护栏组成。引线焊盘上面装有半导体芯片，引线用金属丝电连到芯片上，防流护栏用于防止密封器件时制模树脂流出。
引线框架还具有许多形成于引线框架焊盘的“背面或非功能面”(与装有半导体器件的表面相对的表面)的微坑以改善芯片焊盘和制模树脂之间的结合力，防止在完成封装之后，由于树脂和焊盘的热胀系数的不同而使树脂和焊盘剥离(或分离)开来。形成为具有微坑的引线框架在改善诸如TSOP(薄小外形封装)或SOJ(“J”形弯曲的小形封装)等超小型半导体封装的可靠性方面有重要作用。
引线框架也可以被覆一层聚合物薄膜比如说聚酰亚胺薄膜到焊盘的背面上，从改善制模树脂和引线框架焊盘之间的结合力。薄膜用粘接剂结合到焊盘的背面上，且可具有众多的微坑，通常用模压的方法形成。
由于超小型半导体封装诸如TSOP或SOJ都很薄，所以它们易碎。而且，来自外部环境的湿气将渗入封装中去，使得制模树脂与焊盘剥离开来。
图1是半导体封装的引线框架的示意平面图。
图2A是引线框架焊盘的底视图。焊盘的背面带有圆形微坑；图2E是沿图2A的A-A线的剖面图。
图3A是引线框架焊盘的底视图。焊盘的背面有金刚石状的微坑；图3B是沿着图3A的B-B线的剖视图。
现在我们来看图1～3。引线框架(100)由引线框架焊盘(50)，内侧引线(30)，外侧引线(40)，防流护栏(20)，侧轨(10)和引导孔(12)组成。焊盘50上边用一种胶粘剂装有半导体芯片(没有画出)；内侧引线30通过细金属丝(没有画出)电连到形成于芯片上的丝焊焊盘上；外侧引线40和内侧引线作在一起并电连到外部管腿(没有画出)上；防流护栏20用于防止在用树脂密封时制模树脂流动；侧轨10形成于引线框架100的顶端和底端；引导孔12形成于侧轨10里边，用于用传送工具(没有画出)适当地传送引线框架。
微坑(155，255)可以用刻蚀的方法形成于引线框架焊盘背面(150)上，也可以用模压法形成于附着到引线框架焊盘的背面上的聚酰亚胺薄膜(250)上。刻蚀法可形成包括圆球形微坑(155)在内的各种形状的微坑，而模压法主要地形成金刚石形(或斜切角面形)微坑(255)。
刻蚀法的优点是可以形成能制作高度可靠的封装的圆球形微坑。并可用于制作要求高可靠性的TSOP或者SOJ。而且，这种方法可以形成各种形状的微坑，包括圆球形微坑。
但是，它的缺点是造价高且生产率低，因为需要刻蚀引线框架焊盘本身。
与此相反，模压法比刻蚀法强的长处是这种方法生产效率高且造价低。但是，它不能形成圆球形微坑。其次，用模压法形成的金刚石状微坑，在诸如TSOP或SOJ这样的超小型封装的情况下，在改善焊盘和树脂之间结合力方面显示出无效。
图4A是现有引线框架的底视图。这种引线框架的焊盘在其背面上被覆以聚酰亚胺薄膜；图4B是图4A中沿C-C线的剖视图。
我们来看图4。引线框架焊盘(350)在其背面上用胶粘剂(320)被以聚酰亚胺薄膜(310)。由于胶粘剂层(320)成了来自外部环境的湿气的渗透通路，故将招致制模树脂(310)从焊盘(350)上剥落(或剥离)。
因此，要求提供一种没有上述缺点的引线框架。
有鉴于此，本发明的一个目的是提供一种在引线框架焊盘和制模树脂之间不会出现剥离的半导体封装的引线框架。
为了实现上述目的，本发明提供一种用于生产引线框架的工艺。这种引线框架具有一个焊盘，内侧引线、外侧引线和防流护栏。上述在焊盘的背面上附着有一层膜的引线框架，包括下述生产工序：
准备好具有焊盘，内侧引线和外侧引线的引线框架；
在焊盘的背面上(不用胶粘剂)放上一层聚酰胺酸(polyamicacid)薄膜；和
用一个热产生器使膜热压缩以形成聚酰亚胺薄膜。与此同时，使膜附着到焊盘的背面上。
本发明还提供一种用于生产半导体封装的工艺。
下述附图的同一构成部件都标以同一参考数字，参照结合这些附图进行的下述详细叙述，可以很容易地弄清楚本发明的上述和各种其他的特点和长处。在附图中，
图1A是引线框图的平面图；
图2A是其背面带有圆球形微坑的引线框架焊盘的底视图；
图2B是图2A中沿A-A线剖开的剖视图；
图3A是其背面带有金刚石状微坑的引线框架的底视图；
图3B是图3A中沿B-B线剖开的剖视图；
图4A是现有引线框架的底视图。这种引线框架的焊盘在背面上被有聚酰亚胺薄膜；
图4B是图4A中沿C-C线剖开的剖视图；
图5A是本发明的引线框架的底视图。该引线框架的焊盘在其背面上被有聚酰亚胺薄膜；
图5B是沿图5A的D-D线剖开的剖视图；
图6A到图6C示出了本发明的生产引线框架的各个工序；
图7的示意图给出了封装上的应力级别。该封装的引线框架焊盘用胶粘剂在其背面上粘上了一层聚酰亚胺薄膜；
图8的示意图给出了封装上的应力级别。该封装的引线框架焊盘上附着有用本发明形成的聚酰亚胺薄膜；和
图9是一种引线框架焊盘的平面图，该引线框架焊盘的背面附着有带穿透孔的聚酰亚胺。
下面参照附图对本发明进行详细说明。
图5A是采用本发明的引线框架的底视图。该引线框架焊盘在其背面上附有聚酰亚胺薄膜；图5B是沿图5A的D-D线剖开的剖视图。
图6A到图6C示出了采用本发明的工艺的生产引线框架的各个工序。图6A到图6C仅仅画出了引线框架焊盘。
现在来看图5和图6。引线框架焊盘(450)在其背面上不用胶粘剂而直接附着上聚酰亚胺薄膜(410)，其他的特点和构造与示于图1的引线框架(100)的特点和构造相同。
在下文中，将更加详尽地说明本发明的生产工艺。
本发明的工艺由下述工序组成：
(1)准备具有焊盘、内侧引线和外侧引线的引线框架(没有画出来)，
(2)不用胶粘剂而直接把膜(400)附着到焊盘(450)的背面上。
(3)应用设置于焊盘(450)下边的热产生器(300)使膜(400)热压缩。
(4)用现场热压缩膜(400)的办法由膜(400)形成聚酰亚胺薄膜(410)。
对于本发明来说，不用胶粘剂而直接把聚酰亚胺薄膜附着上这一工作可以把聚酰胺酸膜用作膜(400)来完成。被设定于焊盘背面的聚酰胺酸薄膜在现场用热压缩法被聚合成一种高粘性聚亚酰胺薄膜。
热压缩可用热产生器在约350-420℃下进行。
这样制成的引线框架用于半导体芯片的封装。例如，芯片先被装到引线框架焊盘上，并用丝焊工艺电连到内侧引线上，然后，用制模树脂封装起来。这样形成的具有采用本发明所制得的引线框架的半导体封装在制模树脂和引线框架焊盘之间不会出现剥离。
还有，聚酰亚胺薄膜还具有缓和在制模工艺期间所产生的应力的作用。
膜(400)可以有各种各样的形状，只要其大小不大于引线框架焊盘的大小就行。
再者，就如图9所示那样，膜(400)至少可具有一个穿透孔(460)。这样的穿透孔可以起到用刻蚀法或者冲孔法在引线框架焊盘上形成的球形孔相同的作用。
当然，可以用模压法或者刻蚀法在聚酰亚胺膜(400)上形成各种形状的微坑。也可代之以引线框架焊盘本身带有众多的微坑。
实施例1
为了评价半导体封装上的应力级别，准备了两个塑料封装，它们的引线框架焊盘上附着有聚酰亚胺薄膜。一个塑料封装，如图7所示，其构造是聚酰亚胺薄(310)用胶粘剂(320)粘到引线框架焊盘(350)的背面上。另一种塑料封装则如图8所示，其构造是聚酰亚胺薄膜(410)不用胶粘剂而是采用本发明的方法附着到引线框架焊盘(450)的背面上。
我们测定了这两种封装的应力级别，并将测定结果分别示于图7和图8。
图7和图8示意性地示出了整个封装的应力级别。在图7和图8中，不同图案的特征以MPa为单位指明了应力的等级。就如从图中所可看到的那样，对于其聚酰亚胺薄膜是用热压缩技术而不是用胶粘剂粘到引线框架焊盘背面上去的那种封装(图8)，最大应力位于焊盘的边沿处，而对于其聚酰亚胺薄膜是用胶粘剂粘到引线框架焊盘背面的那种封装(图7)来说，确切地说应力分布于整个芯片和内侧引线上，而且最大应力呈现于内侧引线和制模化合物之间的末端交界处。对于后一种情况，和前一种情况相比，易于形成封装断裂或者湿气的渗透。
此外，示于图8的封装，在约40℃和70％的相对湿度下存放了10天之后，没有出现因湿气渗入而使制模化合物从焊盘上剥离开来的现象。
尽管在上述文中我们对本发明的最佳实施例进行了详细的说明，那些在本领域受过训练的人们应当清楚地知道，在这里所指出的基本发明概念的许多变更和修改仍将属于如所附权利要求所确定的本发明的宗旨和范围之内。

Claims (6)

1.一种用于生产引线框架的工艺，该工艺包括步骤：
制备具有焊盘、内侧引线、外侧引线和防流护栏的引线框架；
制备聚酰胺酸膜；
不用胶粘剂，在焊盘的背面放置上所述聚酰胺酸膜；
用热产生器使聚酰胺酸膜热压缩以形成聚酰亚胺膜，同时把聚酰亚胺膜粘附到焊盘的背面上。
2.根据权利要求1所述的工艺，其中所述聚酰胺酸膜的热压缩是在350-420℃的温度下进行的。
3.一种用于生产半导体芯片封装的工艺，该工艺包括步骤：
制备具有焊盘、内侧引线、外侧引线和防流护栏的引线框架；
制备聚酰胺酸膜；
不用胶粘剂，在焊盘的背面放置上所述聚酰胺酸膜；
用热产生器使聚酰胺酸膜热压缩以形成聚酰亚胺膜，同时，使聚酰亚胺膜粘附于焊盘的背面上；
在焊盘上装上半导体芯片；
用金属丝把芯片电连到内侧引线上；以及
用制模树脂把芯片和引线框架密封起来。
4.根据权利要求3所述的工艺，其中聚酰胺酸膜的热压缩是在350-420℃的温度下进行的。
5.根据权利要求3所述的工艺，其中聚酰胺酸膜至少有一个穿透孔。
6.根据权利要求3所述的工艺，其中，引线框架焊盘带有多个的微坑。
CN95119249A 1995-07-31 1995-11-14 用于生产半导体封装引线框架的工艺 Expired - Fee Related CN1080931C (zh)

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KR970008546A (ko) 1997-02-24
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DE19540306C1 (de) 1996-11-28
TW288192B (en) 1996-10-11
US5633206A (en) 1997-05-27
KR0148080B1 (ko) 1998-08-01
CN1142122A (zh) 1997-02-05

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