CN107943182A - Band gap reference start-up circuit - Google Patents
Band gap reference start-up circuit Download PDFInfo
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- CN107943182A CN107943182A CN201711234767.0A CN201711234767A CN107943182A CN 107943182 A CN107943182 A CN 107943182A CN 201711234767 A CN201711234767 A CN 201711234767A CN 107943182 A CN107943182 A CN 107943182A
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- pmos transistor
- resistance
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- comparator
- triode
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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- General Physics & Mathematics (AREA)
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- Automation & Control Theory (AREA)
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Abstract
The invention discloses a kind of band gap reference start-up circuit, including three PMOS transistors, a comparator, two triodes, four resistance and a nmos pass transistor；On the basis of existing band gap reference start-up circuit, a nmos pass transistor is added between second resistance and ground wire, the drain electrode of the nmos pass transistor is connected with second resistance, its source electrode ground connection, its grid is connected with the output terminal of start-up circuit.The present invention can be to avoid the degeneracy point of triode zero current.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, more particularly to a kind of band gap reference start-up circuit.
Background technology
Band gap reference is widely used in integrated circuits.There are multiple steady for general low-voltage bandgap reference source circuit
Determine operating point, when circuit start may be stabilized to undesirable operating point.
Existing band gap reference start-up circuit schematic diagram is shown in Figure 1, it is by three PMOS transistor M1~M3, and one
A comparator OPA, two triodes Q1, Q2 and resistance R0~R3 compositions.Its principle is：The Vbe of two triodes Q1, Q2 are poor
For dVbe=(VbeQ1+VbeQ2), the electric current for flowing through triode Q2 is IQ2=dVbe/R0, the electric current for flowing through resistance R2 is IR2=
Vbe/R2, electric current I3=I2=IQ2+IR2.The Vbe differences dVbe of two triodes Q1, Q2 are positive temperature coefficient；Two triodes
The Vbe of Q1, Q2 are negative temperature coefficient.The ratio of suitable resistance R2 and R0 is set, the electric current I3 of zero-temperature coefficient can be obtained,
Obtain the voltage Vout=I3*R3 of zero-temperature coefficient.
Above-mentioned existing band gap reference start-up circuit has the drawback that there are three degeneracy points, i.e. integrated circuit zero
Electric current, triode zero current, desired stable operating point.In these three degeneracy points, integrated circuit zero current and the electricity of triode zero
Stream is undesirable, and desired stable operating point is desirable.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of band gap reference start-up circuit, can avoid the electricity of triode zero
The degeneracy point of stream.
In order to solve the above technical problems, the band gap reference start-up circuit of the present invention, including：Three PMOS transistors, one
A comparator, two triodes, four resistance and a nmos pass transistor；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor and power voltage terminal VDD phases
Connection, the grid of the first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor are connected with the output terminal of comparator
Connect；
The drain electrode of first PMOS transistor is connected with the emitter of the reverse input end of comparator and the first triode, should
The node of connection is denoted as A；One end of the drain electrode of second PMOS transistor and the positive input of comparator and first resistor and
One end of 3rd resistor is connected, and the node of the connection is denoted as B；The emitter phase of the other end of first resistor and the second triode
Connection；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, and the node of the connection is as the defeated of start-up circuit
Outlet；The collector and base stage of first triode, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th
The other end of resistance is grounded；Wherein：
One end of second resistance is connected with node A, the drain electrode phase of the other end of second resistance and the first nmos pass transistor
Connection, the source electrode ground connection of the first nmos pass transistor, the grid of the first nmos pass transistor are connected with the output terminal of start-up circuit.
The present invention band gap reference start-up circuit use second of technical solution be, including：Three PMOS transistors,
One first comparator, two triodes and four resistance；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor and power voltage terminal VDD phases
Connection, the output terminal of the first PMOS transistor, the grid of the second PMOS transistor and the 3rd PMOS transistor and first comparator
It is connected；
Drain electrode and the reverse input end of the first comparator and the emitter of the first triode of first PMOS transistor
It is connected, the node of the connection is denoted as A；The drain electrode of second PMOS transistor and the positive input of the first comparator and the
One end of one resistance and one end of 3rd resistor are connected, and the node of the connection is denoted as B；The other end of first resistor and second
The emitter of triode is connected；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, the 4th resistance it is another
One end is grounded, the drain electrode of the 3rd PMOS transistor and output terminal of the connecting node of the 4th resistance as start-up circuit；One or three
The collector and base stage of pole pipe, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th resistance it is another
End is grounded；One end of second resistance is connected with the node A；
Wherein：An electronic switch is further included, which is connected between the other end of second resistance and ground wire, is opening
The output terminal of dynamic circuit sets one second comparator, and the output terminal of start-up circuit is connected with the positive input of the second comparator
Connect, the reverse input end of second comparator inputs a reference voltage, the control of the output terminal and electronic switch of the second comparator
End is connected；When the output end voltage of start-up circuit is less than reference voltage, the control terminal of electronic switch is low level, electronic cutting
Close and open, when the output end voltage of start-up circuit is more than reference voltage, the control terminal of electronic switch is high level, electronic switch
Closure.
The present invention band gap reference start-up circuit use the third technical solution be, including：Three PMOS transistors,
One first comparator, two triodes and four resistance；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor and power voltage terminal VDD phases
Connection, the output terminal of the first PMOS transistor, the grid of the second PMOS transistor and the 3rd PMOS transistor and first comparator
It is connected；
Drain electrode and the reverse input end of the first comparator and the emitter of the first triode of first PMOS transistor
It is connected, the node of the connection is denoted as A；The drain electrode of second PMOS transistor and the positive input of the first comparator and the
One end of one resistance and one end of 3rd resistor are connected, and the node of the connection is denoted as B；The other end of first resistor and second
The emitter of triode is connected；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, the 4th resistance it is another
One end is grounded, the drain electrode of the 3rd PMOS transistor and output terminal of the connecting node of the 4th resistance as start-up circuit；One or three
The collector and base stage of pole pipe, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th resistance it is another
End is grounded；One end of second resistance is connected with the node A；
Wherein：An electronic switch is further included, which is connected between the other end of second resistance and ground wire, passes through
Electronic switch is switched on or switched off, and avoids the degeneracy point of triode zero current.
Band gap reference start-up circuit using the present invention, due on the basis of existing band gap reference start-up circuit,
A nmos pass transistor is added between second resistance and ground, which functions as an electronic switch.
Output voltage OUT=0 when so band gap reference start-up circuit powers on, path is cut off second resistance over the ground, and electric current passes through first
Triode.Output voltage OUT rises after band gap reference start-up circuit starts, and nmos pass transistor is opened, and thus avoid three
The degeneracy point of pole pipe zero current.
Brief description of the drawings
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings：
Fig. 1 is existing band gap reference start-up circuit schematic diagram；
Fig. 2 is improved one schematic diagram of band gap reference start-up circuit embodiment；
Fig. 3 is improved two schematic diagram of band gap reference start-up circuit embodiment.
Embodiment
Embodiment one
Fig. 2 is improved one embodiment schematic diagram of band gap reference start-up circuit, compares Fig. 1 and Fig. 2, improved band
Gap reference source start circuit mainly adds a nmos pass transistor between resistance R1 and ground wire in the present embodiment, should
The drain electrode of nmos pass transistor is connected with resistance R1, its source electrode ground connection, its grid is connected with the output terminal of start-up circuit, thus
Can be to avoid the degeneracy point of triode zero current.Specific circuit structure is as follows in the present embodiment：
Power voltage terminal VDD is connected with the source electrode of PMOS transistor M1, and the source electrode and PMOS of PMOS transistor M2
The source electrode of transistor M3 is connected with power voltage terminal VDD.
The drain electrode with PMOS transistor M1, the emitter of triode Q1 are connected the reverse input end of comparator OPA respectively,
And the node of the connection is denoted as A.
The positive input of comparator the OPA drain electrode with PMOS transistor M2, one end of resistance R0 and resistance R1 respectively
One end is connected, and the node of the connection is denoted as B.
The grid with PMOS transistor M1, the grid of PMOS transistor M2 and PMOS are brilliant respectively for the output terminal of comparator OPA
The grid of body pipe M3 is connected.
The drain electrode of PMOS transistor M3 is connected with one end of resistance R3, the other end ground connection of resistance R3.PMOS transistor
The drain electrode of M3 and output terminal OUT of the tie point of resistance R3 as start-up circuit.
One end of resistance R1 is connected with the node A, and the other end of resistance R1 is connected with the drain electrode of nmos pass transistor MS
Connect, the source electrode ground connection of nmos pass transistor MS, the grid of nmos pass transistor MS is connected with the output terminal OUT of start-up circuit.Resistance
The other end of R0 is connected with the emitter of triode Q2.
The collector and base stage of triode Q1, the collector of triode Q2 and base stage, the other end of resistance R2 are grounded.
Embodiment two
Shown in Figure 3, difference of the improved band gap reference start-up circuit in the present embodiment with embodiment one exists
In, an electronic switch SW is added between resistance R1 and ground wire, start-up circuit output terminal set one second compare
Device CMP.The output terminal OUT of start-up circuit is connected with the positive input of the second comparator CMP, second comparator CMP's
Reverse input end inputs a reference voltage VTH, and the output terminal of the second comparator CMP is connected with the control terminal DET of electronic switch SW
Connect.When the output terminal OUT voltages of start-up circuit are less than reference voltage VTH, DET ends are low level, and electronic switch SW is opened, when
When the output terminal OUT voltages of start-up circuit are more than reference voltage VTH, DET ends are high level, and electronic switch SW is closed.Thus keep away
The degeneracy point of triode zero current is exempted from.
The present invention is described in detail above by embodiment, but these are not formed to the present invention's
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (7)
1. a kind of band gap reference start-up circuit, including：Three PMOS transistors, a comparator, two triodes and four
Resistance；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with power voltage terminal VDD,
The grid of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with the output terminal of comparator；
The drain electrode of first PMOS transistor is connected with the reverse input end of the comparator and the emitter of the first triode, should
The node of connection is denoted as A；Drain electrode and the positive input of the comparator and one end of first resistor of second PMOS transistor
And one end of 3rd resistor is connected, the node of the connection is denoted as B；The transmitting of the other end of first resistor and the second triode
Pole is connected；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, the other end ground connection of the 4th resistance, and the 3rd
The drain electrode of PMOS transistor and output terminal of the connecting node of the 4th resistance as start-up circuit；The collector of first triode and
The other end of base stage, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th resistance is grounded；Second electricity
One end of resistance is connected with the node A；
It is characterized in that：Further include one first nmos pass transistor, the drain electrode of the other end of second resistance and the first nmos pass transistor
It is connected, the source electrode ground connection of the first nmos pass transistor, the grid of the first nmos pass transistor is connected with the output terminal of start-up circuit.
2. start-up circuit as claimed in claim 1, it is characterised in that：Output voltage OUT=0 when powering on, second resistance is over the ground
Path is cut off, and the electric current for flowing through the drain electrode of the first PMOS transistor passes through the first triode；Output voltage OUT after start-up circuit starts
Rise, the first nmos pass transistor is opened, and avoids the degeneracy point of triode zero current.
3. a kind of band gap reference start-up circuit, including：Three PMOS transistors, a first comparator, two triodes and
Four resistance；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with power voltage terminal VDD,
The grid of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with the output terminal of first comparator
Connect；
The drain electrode of first PMOS transistor is connected with the reverse input end of the first comparator and the emitter of the first triode
Connect, the node of the connection is denoted as A；The drain electrode of second PMOS transistor and the positive input of the first comparator and the first electricity
One end of resistance and one end of 3rd resistor are connected, and the node of the connection is denoted as B；The other end of first resistor and the two or three pole
The emitter of pipe is connected；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, the other end of the 4th resistance
Ground connection, the drain electrode of the 3rd PMOS transistor and output terminal of the connecting node of the 4th resistance as start-up circuit；First triode
Collector and base stage, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th resistance the other end it is equal
Ground connection；One end of second resistance is connected with the node A；
It is characterized in that：An electronic switch is further included, which is connected between the other end of second resistance and ground wire,
The output terminal of start-up circuit sets one second comparator, and the output terminal of start-up circuit is connected with the positive input of the second comparator
Connect, the reverse input end of second comparator inputs a reference voltage, the control of the output terminal and electronic switch of the second comparator
End is connected；When the output end voltage of start-up circuit is less than reference voltage, the control terminal of electronic switch is low level, electronic cutting
Close and open, when the output end voltage of start-up circuit is more than reference voltage, the control terminal of electronic switch is high level, electronic switch
Closure.
4. a kind of band gap reference start-up circuit, including：Three PMOS transistors, a first comparator, two triodes and
Four resistance；
The source electrode of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with power voltage terminal VDD,
The grid of first PMOS transistor, the second PMOS transistor and the 3rd PMOS transistor is connected with the output terminal of first comparator
Connect；
The drain electrode of first PMOS transistor is connected with the reverse input end of the first comparator and the emitter of the first triode
Connect, the node of the connection is denoted as A；The drain electrode of second PMOS transistor and the positive input of the first comparator and the first electricity
One end of resistance and one end of 3rd resistor are connected, and the node of the connection is denoted as B；The other end of first resistor and the two or three pole
The emitter of pipe is connected；The drain electrode of 3rd PMOS transistor is connected with one end of the 4th resistance, the other end of the 4th resistance
Ground connection, the drain electrode of the 3rd PMOS transistor and output terminal of the connecting node of the 4th resistance as start-up circuit；First triode
Collector and base stage, the collector of the second triode and base stage, the other end of 3rd resistor and the 4th resistance the other end it is equal
Ground connection；One end of second resistance is connected with the node A；
It is characterized in that：An electronic switch is further included, which is connected between the other end of second resistance and ground wire, leads to
Being switched on or switched off for electronic switch is spent, avoids the degeneracy point of triode zero current.
5. circuit as claimed in claim 4, it is characterised in that：The electronic switch is one first nmos pass transistor, and second is electric
The other end of resistance is connected with the drain electrode of the first nmos pass transistor, the source electrode ground connection of the first nmos pass transistor, the first NMOS crystal
The grid of pipe is connected with the output terminal of start-up circuit.
6. circuit as claimed in claim 5, it is characterised in that：Output voltage OUT=0 when powering on, second resistance path over the ground
Cut-out, the electric current for flowing through the drain electrode of the first PMOS transistor pass through the first triode；After start-up circuit starts on output voltage OUT
Rise, the first nmos pass transistor is opened, and avoids the degeneracy point of triode zero current.
7. circuit as claimed in claim 4, it is characterised in that：One second comparator is set in the output terminal of start-up circuit, is opened
The output terminal of dynamic circuit is connected with the positive input of the second comparator, one ginseng of reverse input end input of second comparator
Voltage is examined, the output terminal of the second comparator is connected with the control terminal of electronic switch；When the output end voltage of start-up circuit is less than
During reference voltage, the control terminal of electronic switch is low level, and electronic switch is opened, when the output end voltage of start-up circuit is more than ginseng
When examining voltage, the control terminal of electronic switch is high level, and electronic switch closes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711234767.0A CN107943182B (en) | 2017-11-30 | 2017-11-30 | Band gap reference start-up circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711234767.0A CN107943182B (en) | 2017-11-30 | 2017-11-30 | Band gap reference start-up circuit |
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| CN107943182A true CN107943182A (en) | 2018-04-20 |
| CN107943182B CN107943182B (en) | 2019-10-11 |
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| CN201711234767.0A Active CN107943182B (en) | 2017-11-30 | 2017-11-30 | Band gap reference start-up circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109995355A (en) * | 2019-04-24 | 2019-07-09 | 京东方科技集团股份有限公司 | Band-gap reference circuit and electronic equipment |
| CN110007127A (en) * | 2019-04-28 | 2019-07-12 | 西安华泰半导体科技有限公司 | A kind of voltage detecting circuit |
| CN110908426A (en) * | 2019-10-30 | 2020-03-24 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN113110680A (en) * | 2021-05-28 | 2021-07-13 | 杭州米芯微电子有限公司 | Starting circuit of reference circuit and reference circuit |
| CN114688961A (en) * | 2022-04-02 | 2022-07-01 | 南通四建集团有限公司 | Scaffold frame warp detecting system device |
| CN115629645A (en) * | 2022-12-19 | 2023-01-20 | 江苏润石科技有限公司 | Current mode band gap reference voltage circuit and starting method thereof |
| CN116414174A (en) * | 2023-05-25 | 2023-07-11 | 芯动微电子科技(珠海)有限公司 | Band gap reference circuit, starting circuit and starting method thereof |
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| CN101571727A (en) * | 2009-06-11 | 2009-11-04 | 和芯微电子(四川)有限公司 | Current-type band gap reference source circuit starting circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109995355A (en) * | 2019-04-24 | 2019-07-09 | 京东方科技集团股份有限公司 | Band-gap reference circuit and electronic equipment |
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| CN110007127A (en) * | 2019-04-28 | 2019-07-12 | 西安华泰半导体科技有限公司 | A kind of voltage detecting circuit |
| CN110908426B (en) * | 2019-10-30 | 2022-04-22 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN110908426A (en) * | 2019-10-30 | 2020-03-24 | 西安空间无线电技术研究所 | Total dose protection band gap reference source circuit |
| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN111208859B (en) * | 2020-02-26 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN113110680A (en) * | 2021-05-28 | 2021-07-13 | 杭州米芯微电子有限公司 | Starting circuit of reference circuit and reference circuit |
| CN114688961A (en) * | 2022-04-02 | 2022-07-01 | 南通四建集团有限公司 | Scaffold frame warp detecting system device |
| CN114688961B (en) * | 2022-04-02 | 2024-01-26 | 南通四建集团有限公司 | Scaffold deformation detection system device |
| CN115629645A (en) * | 2022-12-19 | 2023-01-20 | 江苏润石科技有限公司 | Current mode band gap reference voltage circuit and starting method thereof |
| CN116414174A (en) * | 2023-05-25 | 2023-07-11 | 芯动微电子科技(珠海)有限公司 | Band gap reference circuit, starting circuit and starting method thereof |
| CN116414174B (en) * | 2023-05-25 | 2023-08-22 | 芯动微电子科技(珠海)有限公司 | Band gap reference circuit, starting circuit and starting method thereof |
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| Publication number | Publication date |
|---|---|
| CN107943182B (en) | 2019-10-11 |
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