CN107924144B - 用于制造液晶显示的光刻胶剥离剂组合物 - Google Patents
用于制造液晶显示的光刻胶剥离剂组合物 Download PDFInfo
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- CN107924144B CN107924144B CN201680047867.XA CN201680047867A CN107924144B CN 107924144 B CN107924144 B CN 107924144B CN 201680047867 A CN201680047867 A CN 201680047867A CN 107924144 B CN107924144 B CN 107924144B
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- acid
- phosphate
- ether
- metal
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 86
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004973 liquid crystal related substance Substances 0.000 title description 2
- 238000005260 corrosion Methods 0.000 claims abstract description 95
- 230000007797 corrosion Effects 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000003112 inhibitor Substances 0.000 claims abstract description 59
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 29
- 150000003624 transition metals Chemical class 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001868 water Inorganic materials 0.000 claims abstract description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 20
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 20
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 24
- -1 glycol ethers Chemical class 0.000 claims description 22
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 21
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 claims description 21
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 16
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 16
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 14
- FQXRXTUXSODUFZ-UHFFFAOYSA-N 1h-imidazol-2-ylmethanethiol Chemical compound SCC1=NC=CN1 FQXRXTUXSODUFZ-UHFFFAOYSA-N 0.000 claims description 12
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 11
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 claims description 9
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 8
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 8
- SCIGVHCNNXTQDB-UHFFFAOYSA-N decyl dihydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(O)=O SCIGVHCNNXTQDB-UHFFFAOYSA-N 0.000 claims description 8
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 8
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 8
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims description 8
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 8
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 8
- QQWOBTZNLVCPMY-UHFFFAOYSA-N 1,2,3-benzothiadiazole-4-thiol Chemical compound SC1=CC=CC2=C1N=NS2 QQWOBTZNLVCPMY-UHFFFAOYSA-N 0.000 claims description 7
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 7
- XIPFMBOWZXULIA-UHFFFAOYSA-N pivalamide Chemical compound CC(C)(C)C(N)=O XIPFMBOWZXULIA-UHFFFAOYSA-N 0.000 claims description 7
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 6
- WRKCIHRWQZQBOL-UHFFFAOYSA-N octyl dihydrogen phosphate Chemical compound CCCCCCCCOP(O)(O)=O WRKCIHRWQZQBOL-UHFFFAOYSA-N 0.000 claims description 6
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 claims description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 5
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 5
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 4
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 claims description 3
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 3
- VTDOEFXTVHCAAM-UHFFFAOYSA-N 4-methylpent-3-ene-1,2,3-triol Chemical compound CC(C)=C(O)C(O)CO VTDOEFXTVHCAAM-UHFFFAOYSA-N 0.000 claims description 3
- 239000005696 Diammonium phosphate Substances 0.000 claims description 3
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 3
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 claims description 3
- UOKRBSXOBUKDGE-UHFFFAOYSA-N butylphosphonic acid Chemical compound CCCCP(O)(O)=O UOKRBSXOBUKDGE-UHFFFAOYSA-N 0.000 claims description 3
- DZQISOJKASMITI-UHFFFAOYSA-N decyl-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound CCCCCCCCCCP(O)(O)=O DZQISOJKASMITI-UHFFFAOYSA-N 0.000 claims description 3
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 claims description 3
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 claims description 3
- GATNOFPXSDHULC-UHFFFAOYSA-N ethylphosphonic acid Chemical compound CCP(O)(O)=O GATNOFPXSDHULC-UHFFFAOYSA-N 0.000 claims description 3
- GGKJPMAIXBETTD-UHFFFAOYSA-L heptyl phosphate Chemical compound CCCCCCCOP([O-])([O-])=O GGKJPMAIXBETTD-UHFFFAOYSA-L 0.000 claims description 3
- PHNWGDTYCJFUGZ-UHFFFAOYSA-L hexyl phosphate Chemical compound CCCCCCOP([O-])([O-])=O PHNWGDTYCJFUGZ-UHFFFAOYSA-L 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 claims description 3
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 3
- 239000006012 monoammonium phosphate Substances 0.000 claims description 3
- WYAKJXQRALMWPB-UHFFFAOYSA-N nonyl dihydrogen phosphate Chemical compound CCCCCCCCCOP(O)(O)=O WYAKJXQRALMWPB-UHFFFAOYSA-N 0.000 claims description 3
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 claims description 3
- CKVICYBZYGZLLP-UHFFFAOYSA-N pentylphosphonic acid Chemical compound CCCCCP(O)(O)=O CKVICYBZYGZLLP-UHFFFAOYSA-N 0.000 claims description 3
- NSETWVJZUWGCKE-UHFFFAOYSA-N propylphosphonic acid Chemical compound CCCP(O)(O)=O NSETWVJZUWGCKE-UHFFFAOYSA-N 0.000 claims description 3
- OGDSVONAYZTTDA-UHFFFAOYSA-N tert-butylphosphonic acid Chemical compound CC(C)(C)P(O)(O)=O OGDSVONAYZTTDA-UHFFFAOYSA-N 0.000 claims description 3
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- RXPQRKFMDQNODS-UHFFFAOYSA-N tripropyl phosphate Chemical compound CCCOP(=O)(OCCC)OCCC RXPQRKFMDQNODS-UHFFFAOYSA-N 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- JKEHLQXXZMANPK-UHFFFAOYSA-N 1-[1-(1-propoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCOCC(C)OCC(C)OCC(C)O JKEHLQXXZMANPK-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- BQCCJWMQESHLIT-UHFFFAOYSA-N 1-propylsulfinylpropane Chemical compound CCCS(=O)CCC BQCCJWMQESHLIT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 claims description 2
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 2
- FMVOPJLFZGSYOS-UHFFFAOYSA-N 2-[2-(2-ethoxypropoxy)propoxy]propan-1-ol Chemical compound CCOC(C)COC(C)COC(C)CO FMVOPJLFZGSYOS-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- KCBPVRDDYVJQHA-UHFFFAOYSA-N 2-[2-(2-propoxyethoxy)ethoxy]ethanol Chemical compound CCCOCCOCCOCCO KCBPVRDDYVJQHA-UHFFFAOYSA-N 0.000 claims description 2
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- 125000005431 alkyl carboxamide group Chemical group 0.000 claims description 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940052303 ethers for general anesthesia Drugs 0.000 claims description 2
- 229940093476 ethylene glycol Drugs 0.000 claims description 2
- 229960004063 propylene glycol Drugs 0.000 claims description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims 1
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 54
- 239000010949 copper Substances 0.000 abstract description 28
- 229910052802 copper Inorganic materials 0.000 abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 14
- 238000001312 dry etching Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 21
- 150000001412 amines Chemical class 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 125000001424 substituent group Chemical group 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004070 electrodeposition Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 125000001072 heteroaryl group Chemical group 0.000 description 6
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 5
- 125000004104 aryloxy group Chemical group 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 4
- 239000004254 Ammonium phosphate Substances 0.000 description 4
- SXRSQZLOMIGNAQ-UHFFFAOYSA-N Glutaraldehyde Chemical compound O=CCCCC=O SXRSQZLOMIGNAQ-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 235000019289 ammonium phosphates Nutrition 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 150000002334 glycols Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- PRBXPAHXMGDVNQ-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]acetic acid Chemical compound OCCOCCOCC(O)=O PRBXPAHXMGDVNQ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- LOJDCAMNNRALFJ-UHFFFAOYSA-N octylphosphonic acid Chemical compound C(CCCCCCC)P(O)(O)=O.C(CCCCCCC)P(O)(O)=O LOJDCAMNNRALFJ-UHFFFAOYSA-N 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- JNODDICFTDYODH-UHFFFAOYSA-N 2-hydroxytetrahydrofuran Chemical compound OC1CCCO1 JNODDICFTDYODH-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 231100000357 carcinogen Toxicity 0.000 description 2
- 239000003183 carcinogenic agent Substances 0.000 description 2
- JJLJMEJHUUYSSY-UHFFFAOYSA-L copper(II) hydroxide Inorganic materials [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 2
- AEJIMXVJZFYIHN-UHFFFAOYSA-N copper;dihydrate Chemical compound O.O.[Cu] AEJIMXVJZFYIHN-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 125000001041 indolyl group Chemical group 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- PSGAAPLEWMOORI-PEINSRQWSA-N medroxyprogesterone acetate Chemical compound C([C@@]12C)CC(=O)C=C1[C@@H](C)C[C@@H]1[C@@H]2CC[C@]2(C)[C@@](OC(C)=O)(C(C)=O)CC[C@H]21 PSGAAPLEWMOORI-PEINSRQWSA-N 0.000 description 2
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- VWBWQOUWDOULQN-UHFFFAOYSA-N nmp n-methylpyrrolidone Chemical compound CN1CCCC1=O.CN1CCCC1=O VWBWQOUWDOULQN-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MBDNRNMVTZADMQ-UHFFFAOYSA-N sulfolene Chemical compound O=S1(=O)CC=CC1 MBDNRNMVTZADMQ-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 229940005605 valeric acid Drugs 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000811 xylitol Substances 0.000 description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 2
- 229960002675 xylitol Drugs 0.000 description 2
- 235000010447 xylitol Nutrition 0.000 description 2
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- 125000002941 2-furyl group Chemical group O1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- 125000004105 2-pyridyl group Chemical group N1=C([*])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 101100029848 Arabidopsis thaliana PIP1-2 gene Proteins 0.000 description 1
- DPUJNLWWOKIQKP-UHFFFAOYSA-N C(C)P(O)(O)=O.C(C)P(O)(O)=O Chemical compound C(C)P(O)(O)=O.C(C)P(O)(O)=O DPUJNLWWOKIQKP-UHFFFAOYSA-N 0.000 description 1
- AMNHKZMAGAJANJ-UHFFFAOYSA-N C(CCC)P(O)(O)=O.C(CCC)P(O)(O)=O Chemical compound C(CCC)P(O)(O)=O.C(CCC)P(O)(O)=O AMNHKZMAGAJANJ-UHFFFAOYSA-N 0.000 description 1
- YQQSALRPMQRYGK-UHFFFAOYSA-N C(CCCCCCCCC)P(O)(O)=O.C(CCCCCCCCC)P(O)(O)=O Chemical compound C(CCCCCCCCC)P(O)(O)=O.C(CCCCCCCCC)P(O)(O)=O YQQSALRPMQRYGK-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RPWFJAMTCNSJKK-UHFFFAOYSA-N Dodecyl gallate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 RPWFJAMTCNSJKK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000318 alkali metal phosphate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- ASYZRLCMYUFCHK-UHFFFAOYSA-N azane cobalt phosphoric acid Chemical compound N.[Co].OP(O)(O)=O ASYZRLCMYUFCHK-UHFFFAOYSA-N 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- KTHXBEHDVMTNOH-UHFFFAOYSA-N cyclobutanol Chemical compound OC1CCC1 KTHXBEHDVMTNOH-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical compound CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 description 1
- 229940043264 dodecyl sulfate Drugs 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- LNZGAWGNDIUUEU-UHFFFAOYSA-N hexylphosphonic acid Chemical compound C(CCCCC)P(O)(O)=O.C(CCCCC)P(O)(O)=O LNZGAWGNDIUUEU-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002962 imidazol-1-yl group Chemical group [*]N1C([H])=NC([H])=C1[H] 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- YURONFJXEXMJGQ-UHFFFAOYSA-N n-ethylformamide Chemical compound CCNC=O.CCNC=O YURONFJXEXMJGQ-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000561 purinyl group Chemical group N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000002098 pyridazinyl group Chemical group 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000246 pyrimidin-2-yl group Chemical group [H]C1=NC(*)=NC([H])=C1[H] 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
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Abstract
本发明涉及一种用于LCD制造的光刻胶剥离剂组合物,以及一种能够用于制造一种TFT‑LCD的所有过程的集成光刻胶剥离剂组合物。更具体地,本发明涉及一种水性光刻胶剥离剂组合物,其能够应用于所有过渡金属、电位金属和氧化物半导体电线中。所述的水性光刻胶剥离剂组合物包括(a)一种电位金属和金属氧化物缓蚀剂、(b)一种过渡金属缓蚀剂、(c)一种伯烷醇胺、(d)一种环醇、(e)水、(f)一种非质子极性有机溶剂、和(g)一种质子极性有机溶剂,其中所述的光刻胶剥离剂组合物在半导体或平面显示面板过程中,有优异去除在进行硬烘烤工艺、注入工艺和干法蚀刻工艺后产生的降解的光刻胶的能力,可以同时应用于铝(其为电位金属)、铜或银(其为过渡金属)、和同样地,金属氧化物电线,并且可以被引入有机膜和COA工艺中。
Description
技术领域
本公开涉及一种用于制造LCD的刻胶剥离剂组合物,以及涉及一种能够用于制造TFT-LCD的所有过程的集成光刻胶剥离剂组合物。更具体地,本公开涉及一种能够被用于全部过渡金属、电位金属和氧化物半导体线的水性光刻胶剥离剂组合物。
背景技术
在平板显示器(FPD)制造过程中,一种光刻技术工艺(photo-lithographyprocess)被广泛地用于在基板上形成恒定的图案。
这种光刻技术工艺主要由一系列如曝光过程、干法或湿法蚀刻过程和灰化的过程组成,以及在基板上涂覆并曝光光刻胶后,在其上进行干法或湿法蚀刻以形成图案。因此,留在金属线上的光刻胶(photoresist)需要使用光刻胶剥离剂(photoresist stripper)除去。
迄今为止,通常用于LCD工艺的光刻胶剥离剂主要是有机的,不包含水,并且已经使用烷醇胺、极性溶剂或二醇类混合物。
作为烷醇胺(alkanolamines),单乙醇胺(monoethanolamine,MEA)、异丙醇胺(isopropanolamine,MIPA)和其类似物已被使用,并且作为极性溶剂,N-甲基吡咯烷酮(N-methyl pyrrolidon,NMP)、环丁烯砜(sulfolene)、二甲亚砜(dimethyl sulfoxide,DMSO)和其类似物已被使用。此外,作为二醇类,二甘醇一***(diethylene glycol monoethylether,EDG)、二甘醇一丁醚(diethylene glycol monobutyl ether,BDG)、三乙二醇丁醚(triethylene glycol ether,TEG)和其类似物的混合物已被使用。
在蚀刻过程之后留下的光刻胶通常使用前文所述的光刻胶剥离剂剥除并在之后用水清洗,且由于光刻胶的再吸收,用水洗有腐蚀金属线和产生异物的问题。这是因为当烷醇胺与水混合后产生了氢氧离子,导致对包括铝在内的金属腐蚀性的显著增加,并需要一种特殊的缓蚀剂来防止金属丝腐蚀。另外,铜(Cu)金属线膜(metal wire film)对于胺类的抗腐蚀抗性与Al金属线膜相比相当弱。作为在用于LCD的铜(Cu)线膜上使用的通用有机剥离剂,使用了仲烷醇胺,并分别加入缓蚀剂。作为用于铜(Cu)腐蚀性的有机剥离剂,只考虑胺的腐蚀选择缓蚀剂。然而,在水性剥离剂中,胺腐蚀,以及由胺产生的氢氧基团(OH-)的腐蚀也需要被考虑。
另外,在TFT-LCD铝(Al)线膜中,按顺序经过硬烘烤工艺(hard baked)、注入工艺(implant)和干法蚀刻工艺(dry etch)的一种降解的光刻胶(degenerated photoresist)需要被剥离,以及其中,在进行硬烘烤和干法蚀刻工艺后,有时使用弱碱性胺降低光刻胶去除能力时,光刻胶的剥离可能并不完美。在韩国专利号10-0950779中,使用混合有(无添加缓蚀剂)极性溶剂(包括二醇)的含有水(1%到50%)的叔烷醇胺,铝(Al)和铜(Cu)金属线在溶液中不会被腐蚀,然而,在经过硬烘烤工艺、注入工艺和干法蚀刻工艺后,当使用弱碱性烷醇胺(叔烷醇胺)时,存在剥离降解的光刻胶不完美的问题。需要研究解决这些问题。
公开
技术问题
本公开涉及用于制造LCD的光刻胶剥离剂组合物。
本公开涉及提供一种用于制造LCD的光刻胶剥离剂组合物,无论铜(Cu)、铝(Al)和氧化物金属线的含水量如何,所述LCD都具有优异的抗腐蚀性和剥离能力。
本公开还涉及提供一种用于制造LCD的光刻胶剥离剂组合物,在进行硬烘烤(hardbaked)工艺、注入(implant)工艺和干法蚀刻(dry etch)过程后所述LCD具有优异的去除降解的光刻胶的能力。
本公开的一个实施方式涉及用于制造LCD的光刻胶剥离剂组合物,其包括(a)0.01重量%到3重量%的具有下述化学式1的一种电位金属(potential metal)和金属氧化物缓蚀剂;(b)0.01重量%到3重量%的具有下述化学式2的一种过渡金属缓蚀剂;(c)1重量%到20重量%的一种伯烷醇胺;(d)1重量%到30重量%的一种环醇(cyclic alcohol);(e)0.1重量%到40重量%的水;(f)1重量%到40重量%的非质子(aprotic)极性有机溶剂;和(g)20重量%到60重量%的质子极性有机溶剂;和
<化学式1>
<化学式2>
在化学式1和化学式2中,T1和T2是-O-NH4 +或-O-H,T3是-O-R或–R’,R和R'选自下组:氢、取代或未取代的C1到C12烷基、取代或未取代的C2~C12烯基、取代或未取代的C2~C12炔基、取代或未取代的C3~C12环烷基、具有3到10个核型原子的杂环烷基、烷基酸、C6~C20芳基、具有5到20个核型原子的杂芳基、C1~C12烷氧基和C6~C12芳氧基,X1、X2、X3和X4是C、N或O,R1选自下组:取代或未取代的C1~C5烷基、取代或未取代的C2~C5烯基和取代或未取代的C2~C5炔基,并且当X4是O,R1不存在,R2和R3选自下组:取代或未取代的C1到C8烷基、取代或未取代的C2~C8烯基、取代或未取代的C2~C8炔基、C3~C8环烷基、具有3到8个核型原子的杂环烷基、C6~C20芳基、具有5到20个核型原子的杂芳基、C1~C8烷氧基和C6~C10芳氧基。
本公开的一个实施方式涉及用于LCD的光刻胶剥离剂组合物,其中,过渡金属缓蚀剂选自下组中的任意一种或多种:巯基甲基咪唑(mercaptomethylimidazole)、巯基苯并咪唑(mercaptobenzimidazole)、巯基苯并噻二唑(mercaptobenzothiadiazole)和巯基苯并噁唑(mercaptobenzioxazole)。
本公开的一个实施方式涉及用于LCD的光刻胶剥离剂组合物,其中,电位金属和金属氧化物缓蚀剂选自下组中的任意一种或多种:磷酸二氢铵、磷酸氢二铵、磷酸三铵、甲基膦酸、乙基膦酸、丙基膦酸、丁基膦酸、叔丁基膦酸、戊基膦酸、正己基膦酸、磷酸三乙酯、磷酸三丙酯、辛基膦酸、癸基膦酸、十二烷基膦酸、十四烷基膦酸、十八烷基膦酸、磷酸己酯、磷酸庚酯、辛基磷酸酯、磷酸壬酯、磷酸癸酯和磷酸十二烷基酯。
技术方案
提供本公开的实施例是为了向本领域的普通技术人员更全面地描述本公开。下述实施例可以被修改成各种不同的形式,且本公开的范围不限于下述实施例。提供这些实施例是为了使本公开更加完整和全面,并且将本公开的思想完整地传递给本领域技术人员。
另外,为了便于描述或清楚,附图中的每个层的厚度或尺寸可以被放大,并且在附图中相同的附图标记表示相似的组成部分。如本说明书中所用,术语“和/或”是指一个或多个相应列出的项目的任何一个和所有组合。
本说明书中使用的术语用于描述具体实施例,而非限制本公开。如本说明书中所用,单数形式可以包括复数形式,除非在上下文中明确指出。另外,当在本说明书中使用时,“包含(include)(包括(comprise))”和/或“包含的(including)(包括的(comprising))”指明存在提及的形状、数字、步骤、操作、成员、因素和/或其组合,并且不排除一个或多个其他形状、数字、操作、成员、因素和/或组合的存在或添加。
在本公开中,“烷基”代表衍生自具有1到10个碳原子的直链或支链饱和烃的单价取代基。其实例可以包括:甲基、乙基、丙基、异丁基、仲丁基、戊基、异戊基、己基和其类似物,但不限于此。
在本公开中,“烯基”代表衍生自具有2到10个碳原子且具有一个或多个碳碳双键的直链或支链不饱和烃的单价取代基。其实例可以包括:乙烯基、烯丙基、异丙烯基、2-丁烯基和其类似物,但不限于此。
在本公开中,“炔基”代表衍生自具有2到10个碳原子且具有一个或多个碳碳三键的直链或支链不饱和烃的单价取代基。其实例可以包括:乙炔基、2-丙炔基和类似物,但不限于此。
在本公开中,“芳基”代表衍生自具有6到20个碳原子和具有单环或两个或更多个环的组合的芳烃的单价取代基。另外,也可以包括两个或多个环的简单连接(侧基)或稠合(fused)的形式。这种芳基实例可以包括:苯基、萘基、菲基、蒽基和类似物,但不限于此。
在本公开中,“杂芳基”代表衍生自具有5到20个核型原子的单杂环或多杂环芳族烃的单价取代基。其中,一个或多个碳原子,优选地,环中的1到3个碳原子被如N、O、S或Se的杂原子取代。另外,也可以包括两个或多个环的简单连接(侧基)或融合的形式。此外,还可以包括与芳基稠合的形式。这种杂芳基的例子可以包括6元单环,例如吡啶基,吡嗪基,嘧啶基,哒嗪基或三嗪基;多环,例如吲哚基(phenoxathienyl)、吲哚基、嘌呤基、喹啉基、苯并噻唑基或咔唑基;2-呋喃基、N-咪唑基、2-异恶唑基、2-吡啶基、2-嘧啶基和其类似物,但不限于此。
在本公开中,“芳氧基”是由RO-代表的一价取代基,以及R为具有6到20个碳原子的芳基。这种芳氧基的实例可以包括:苯氧基、萘氧基、二苯氧基和其类似物,但不限于此。
在本公开中,“烷氧基”是由R’O-表示的一价取代基,以及R’为具有1到10个碳原子的烷基,并可以包括直链、支链或环状结构。这种烷氧基的实例可以包括:甲氧基、乙氧基、正丙氧基、1-丙氧基、叔丁氧基、正丁氧基、戊氧基和其类似物,但不限于此。
在本公开中,“环烷基”代表衍生自具有3到10个碳原子的单环或多环非芳族烃的单价取代基。这种环烷基的实例可以包括:环丙基、环戊基、环己基、降莰基(norbornyl)和其类似物,但不限于此。
在本公开中,“杂环烷基”代表衍生自具有3到10个核型原子,以及一个或多个碳原子的非芳族烃的单价取代基,优选地,环上的1到3个碳原子被如N、O、S或Se的杂原子取代。这种杂环烷基的实例可以包括:吗啉、哌嗪和其类似物,但不限于此。
在本公开中,电位金属是,例如,铝(Al),但不限于此例。过渡金属是,例如,铜,但不限于此例。此外,金属氧化物是,例如,铟镓锌氧化物或氧化铟锌,但不限于此例。
在使用与过渡金属相比具有相对较低电导率的电位金属的LCD-TFT工艺中,当进行硬烘烤工艺,注入工艺和干法蚀刻工艺时,产生降解的光刻胶的速率高,因此,相比在铜金属线(一种过渡金属)条件的工艺,更难去除光刻胶。然而,当金属线是与异物化学键合的过渡金属,具有最外层的p轨道,并且在电位金属中,是通过D轨道(D orbital)键合,并因此,吸附到过渡金属上的异物与吸附在电位金属上的异物相比结合更紧密和容易。因为这样的原因,过渡金属丝由异物吸附引起的缺陷的现象比电位金属更容易被观察,并且这种吸附到金属表面的异物在后续处理中会造成缺陷。
关于金属腐蚀,对不同膜材料有不同的特性。铝和金属氧化物被剥离剂中的胺组分形成的氢氧化物腐蚀,而在铜中,腐蚀直接发生种剥离剂中的胺组分上。腐蚀反应如下。
(1)胺和铜处于水溶液状态的腐蚀反应
RNH2+H2O→RNH3 ++OH-
Cu2++2OH-→Cu(OH)2(s)
Cu(OH)2(s)+4RNH3 +→[Cu(RNH2)4]
(2)胺和铜在有机溶液状态中的腐蚀反应
Cu+4RNH2→Cu(RNH2)4
(3)胺和铝处于水溶液状态的腐蚀反应
RNH2+H2O→RNH3 ++OH-
2Al+2OH-+6H2O→2Al(OH)4 -+3H2
为了解决这种腐蚀问题,一种包含烷醇胺的水性剥离液剂组合物在本领域中被使用,且在这种情况下,使用适用于各种需要的缓蚀剂。根据剥离剂所用的烷醇胺类型,Al、Cu、和氧化物半导体膜(oxide semiconductor films)可能被选择性地严重破坏。为防止所述的破坏,添加了一种适于Al、Cu和氧化物半导体膜中每一个的缓蚀剂。
此外,在含有水的光刻胶剥离剂中,在进行TFT-LCD光刻胶剥离过程时,根据使用时间水会挥发,并且由于剥离剂中的水含量变化,缓蚀剂的腐蚀抑制作用和缓蚀剂光刻胶剥离能力快速变化。因此,本公开中提及的所述缓蚀剂需要具有如下特性:能够被用在有机剥离剂中,其中所有水分随着工艺的进行被蒸发,而不仅限于水性剥离剂。
本公开的一种实施方式中涉及用于制造LCD的光刻胶剥离剂组合物,包括(a)0.01重量%到3重量%的具有下述化学式1的一种电位金属和金属氧化物缓蚀剂;(b)0.01重量%到3重量%的具有下述化学式2的一种过渡金属缓蚀剂;(c)1重量%到20重量%的一种伯烷醇胺;(d)1重量%到30重量%的一种环醇;(e)0.1重量%到40重量%的水;(f)1重量%到40重量%的非质子极性有机溶剂;和(g)20重量%到60重量%的质子极性有机溶剂;和所述的水优选地指去离子水。
<化学式1>
<化学式2>
在化学式1和化学式2中,T1和T2是–O-NH4 +或-O-H,T3是-O-R或–R’,R和R'选自下组:氢、取代或未取代的C1到C12烷基、取代或未取代的C2~C12烯基、取代或未取代的C2~C12炔基、烷基酸、取代或未取代的C3~C12环烷基、具有3到10个核型原子的杂环烷基、C6~C20芳基、具有5到20个核型原子的杂芳基、C1~C12烷氧基和C6~C12芳氧基;X1、X2、X3和X4是C、N或O,R1选自下组:取代或未取代的C1~C5烷基、取代或未取代的C2~C5烯基和取代或未取代的C2~C5炔基,以及当X4是O时,R1不存在;和R2和R3选自下组:取代或未取代的C1到C8烷基、取代或未取代的C2~C8烯基、取代或未取代的C2~C8炔基、C3~C8环烷基、具有3到8个核型原子的杂环烷基、C6~C20芳基、具有5到20个核型原子的杂芳基、C1~C8烷氧基和C6~C10芳氧基。
本公开的一个实施方式涉及用于制造LCD的光刻胶剥离剂组合物,其中所述的电位金属和金属氧化物缓蚀剂是下述化学式3:
<化学式3>
在化学式3中,T4是-O-H或-O-NH4 +,T5是-O-NH2或取代或未取代的C1到C12烷基。
本公开的一个实施方式涉及用于制造LCD的光刻胶剥离剂组合物,其中过渡金属缓蚀剂是下述化学式4或下述化学式5:
<化学式4>
<化学式5>
<化学式6>
在化学式4和化学式5中,R4是氢或取代或未取代的C1到C5烷基,以及R5和R6可以是H或通过与化学式6所示的环稠合形成的环。
本公开的一个实施方式涉及用于LCD的光刻胶剥离剂组合物,其中,过渡金属缓蚀剂是选自下组的任何一种或多种:巯基甲基咪唑、巯基苯并咪唑、巯基苯并噻二唑和巯基苯并噁唑。当使用包括巯基的唑类化合物作为缓蚀剂时,不论水含量任何变化,所述的过渡金属缓蚀剂具有相对稳定的抗腐蚀性和光刻胶剥离能力。过渡金属缓蚀剂的含量为0.01重量%-3重量%缓蚀剂,并且当含量不到0.01%时,很难获得抗腐蚀效果,含量大于3重量%,有削弱光刻胶剥离能力的问题。
作为本公开的一个实施例,电位金属和金属氧化物缓蚀剂选自下组中的任意一种或多种:磷酸二氢铵、磷酸氢二铵、磷酸三铵、甲基膦酸、乙基膦酸、丙基膦酸、丁基膦酸、叔丁基膦酸、戊基膦酸、正己基膦酸、磷酸三乙酯、磷酸三丙酯、辛基膦酸、癸基膦酸、十二烷基膦酸、十四烷基膦酸、十八烷基膦酸、磷酸己酯、磷酸庚酯、辛基磷酸酯、磷酸壬酯、磷酸癸酯和磷酸十二烷基酯。如儿茶酚(catechol)的物质(一种通常使用的电位金属缓蚀剂)被列为致癌物,且由于当前工业性质,致癌物质因环保规定不能用在新产品中。此外,当与过渡金属缓蚀剂一同使用时,现有电位金属缓蚀剂的缺点在于通过分解缓蚀剂或降低过渡金属缓蚀剂的能力,铜腐蚀进一步加深。所述的电位金属和金属氧化物抗腐蚀剂的含量为0.01重量%到3重量%。当含量不到0.01重量%时,很难获得抗腐蚀效果,并且含量超过3重量%,具有通过影响剥离剂的碱性而增强对铜(过渡金属)的腐蚀性的问题。
作为本公开的一个实施例,所述的伯烷醇胺选自下组中的任意一种或多种:单乙醇胺、单异丙醇胺、2-氨基-2-甲基-1-丙醇和氨基乙氧基乙醇。
作为本公开的一个实施例,所述的环醇选自下组中的任意一种或多种:四氢糠醇、糠醇和异亚丙基甘油。通常,水性剥离剂使用具有低沸点的水,不像其他的有机型剥离剂,并因此,水挥发量根据工艺条件而增加,且在实际过程中由于局部蒸汽压,活性组分一起蒸发,由挥发除去的量相当大。为了解决这一问题,由于共沸作用,使用环醇降低相比于存在线性(linear)分子时蒸发的量,并且烷醇胺(一种活性组分)的挥发量可以被控制。
作为本公开的一个实施例,所述的非质子极性有机溶剂选自下组中的任意一种或多种:N-甲基吡咯烷酮、二乙基甲酰胺、二甲基丙酰胺、N-甲基甲酰胺(NMF)、二甲基亚砜(DMSO)、二甲基乙酰胺(DMAc)、二丙二醇单甲醚(DPM)、二乙基亚砜、二丙基亚砜、环丁砜、吡咯烷酮、N-乙基吡咯烷酮、林可酰胺(Equamide)和烷基羧酰胺。所述的非质子极性有机溶剂的含量为1重量%到40重量%,并且含量小于1%的所述的非质子极性有机溶剂有降低去除降解的光刻胶能力的问题,且含量大于40重量%有在成本方面微薄利润的问题。
作为本公开的一个实施例,所述的质子极性有机溶剂选自下组中的任意一种或多种:例如乙二醇醚、乙二醇、丙二醇、二乙二醇单乙基醚、二甘醇单丁醚(BDG)、二乙二醇单***、乙二醇单***、乙二醇单丁醚、丙二醇单甲醚、丙二醇单***、丙二醇单丁醚、二乙二醇单***、二乙二醇单丙醚、二乙二醇单丁醚、二丙二醇单甲醚、二丙二醇单***、二丙二醇单丙醚、二丙二醇单丁醚、三甘醇单甲醚、三甘醇单***、三甘醇单丙醚、三甘醇单丁醚、三丙二醇单甲醚、三丙二醇单***、三丙二醇单丙醚和三丙二醇单丁醚。所述的质子极性有机溶剂的含量为20重量%到60重量%。含量少于20重量%的所述质子极性有机溶剂有降低光刻胶剥离能力的问题,并且含量大于60重量%在成本方面有利润微薄的问题。
本公开的一个实施方式涉及用于LCD的光刻胶剥离剂组合物,其不含水。包含水的光刻胶剥离剂组合物被称为水性剥离剂,不包含水的光刻胶剥离剂组合物被称为有机剥离液。即使在制备除水性剥离剂以外的有机剥离剂时,在半导体或平面显示面板工艺中,所述的光刻胶剥离剂组合物有优异去除在进行硬烘烤工艺、注入工艺和干法蚀刻工艺后产生的降解的光刻胶的能力,其可以同时被用于铝(一种电位金属)、铜或银(一种过渡金属)、以及同样地,金属氧化物的电线,并且也可以被引入有机膜和COA工艺中。
有益的效果
本公开涉及一种用于制造LCD的刻胶剥离剂组合物,以及涉及一种能够用于制造TFT-LCD的所有过程的集成光刻胶剥离剂组合物。本公开所述的用于制造LCD的光刻胶剥离剂组合物有优异去除在半导体或平面显示面板工艺中,在进行硬烘烤工艺、注入工艺和干法蚀刻工艺后产生的降解的光刻胶的能力,可以同时被用于电位金属铝、过渡金属铜或银、和同样地,金属氧化物的电线,并且也可以被引入有机膜和COA工艺中。
具体实施方式
在下文中,将描述本公开的优选实施例。
作为本公开的光刻胶剥离剂的成分,一种包含巯基的唑类化合物,它是一种过渡金属缓蚀剂,以0.01重量%到3重量%被用作缓蚀剂。当所述的缓蚀剂的含量不到0.01重量%时,很难获得对于金属线膜的抗腐蚀效果,以及具体地,根据使用的烷醇胺的类型,当缓蚀剂含量低时,由于水量下降,抗腐蚀效果的下降很严重。反之,当所述缓蚀剂的含量超过3重量%时,光刻胶剥离能力变弱。当在本公开的组合物中引入重量比为3%的所述的缓蚀剂,腐蚀抑制性和剥离能力被认为维持了。然而,所述的缓蚀剂价格高,以及因此,没有必要过量引入超过足够的量。
包含了一种铝缓蚀剂,一种电位金属缓蚀剂,一种碱金属磷酸盐和碱金属膦酸。包含这种缓蚀剂是为了进一步加强Mo、Al和其类似物的抗腐蚀能力,但,当含量超过3重量%时,由于影响所述剥离剂的碱性而增强了对铜的腐蚀性,以及因此,没必要过量使用所述的缓蚀剂。
如本公开的所述的的光刻胶剥离剂组合物是包含水的一种水溶液。包含水的水性剥离剂相比有机剥离剂进一步活化了胺的碱度。因此,去除平面显示面板工艺中,在进行硬烘烤工艺、注入工艺和干法蚀刻工艺后留下的降解的光刻胶的能力明显地优于通常用于LCD的有机剥离剂,即使在使用低工艺温度时。使用低工艺温度可以减少平面显示面板的制造成本。此外,通过使用用于本公开的剥离剂组合物的最佳的缓蚀剂,所述的剥离液组合物可以用于铝线和铜线,并也可以被引入有机膜和COA工艺中。
混合一种或多种二醇类作为质子极性有机溶剂可以有效地辅助光刻胶剥离。二醇类起到了有利地扩散降解的光刻胶进入剥离剂并帮助快速去除的作用。上文提及的所述二醇类有R-O(CH2CH2O)H的结构,以及其中,‘R’指的是直链烃、支链烃和环烃中的任意一种,n是1或更大的整数。
更具体地,二乙二醇单甲醚(MDG),二乙二醇单***(EDG),二乙二醇单丁醚(BDG),三乙二醇醚(TEG),乙二醇(EG),丙二醇(PG)或其类似物可以被使用。所述的二醇类的组合物适当地以占总组合物的比例的20%到60%的重量比,以及一种、或二种或多种的与上述R-O(CH2CH2O)H对应的混合物可以被使用。其中,‘R’指的是直链烃、支链烃和环烃中的任意一种,n是1或更大的整数。
环醇减少了所述的剥离剂的挥发量,并控制了烷醇胺(所述产品中重要活性成分之一)的蒸发,起到了长期维持产品性能的作用。所述的环醇是,例如,C4~C6环醇,以及具体地,选自下组中的任意一种或多种:四氢糠醇、糠醇、环丁醇、环戊醇、环己醇和异亚丙基甘油,但不限于所述的例子。所述的环醇的总组合物比例适当地是为1%到30%的重量比,以及一种类型、或二种或更多类型的混合物可以被使用。
极性有机溶剂起到了削弱聚合物材料粘接强度的作用,以便快速地去除降解的光刻胶,以及具体地,选自下组中的任意一种或多种:N-甲基吡咯烷酮,环丁砜,二甲亚砜,二甲基甲酰胺,二乙基甲酰胺,二甲基丙酰胺和二甲基乙酰乙酰胺(dimethylacetoacetamide),但不限于所述的例子。所述的极性有机溶剂是1重量%到40重量%的重量比,可以使用一种类型、或二种或更多类型的混合物。
为了评价本公开的光刻胶剥离剂组合物的性能,当所述的剥离剂组合物置于工艺处理温度下时,组合物中挥发的量和变化的情况如下评价。
[实施例1]
关于使用环醇的挥发量的评价
根据各个评价条件混合的剥离剂置于50℃(在所述工艺中使用的温度)的加热板上,且同时储存所述的剥离剂48小时,对比以重量比测量的挥发蒸发量,以及也在各个条件下测量烷醇胺(一种主要成分)和极性有机溶剂组分的变化比率。作为与环烷比较的材料,评价具有相同的分子量和组成,和相似的沸点的材料,通过使用气相色谱法对主要成分进行分析。
作为针对环醇的对比例1和对比例2,选择具有相似化学式(辛醇、癸醇)的线结构材料,以及也选择具有相似沸点的材料去进行评价。
根据下述表1的结果,经鉴定,无论烷醇胺的类型,当向产品中使用环醇(实施例1和实施例2)时,都获得了降低相对挥发量的结果。此外,经鉴定,当使用环醇时,能决定产品性能的烷醇胺的浓度的变化范围也很小。
也就是说,经鉴定,实施例1和2中使所述的剥离剂在50℃下放置24小时后,尽管在重量上被测得的变化为从-15%到-27%,用于去除光刻胶的所述烷醇胺的含量变化是大约从-3.5%到0%,这意味着所述的含量几乎没有下降。与此同时,当引入直链醇替代环醇时(对比例1和对比例2),使所述的剥离液在50℃下放置24小时后,重量上的变化类似使用环醇的实施例1和2,然而,所述烷醇胺的变化量经测得为从-1.3%到-1%。
[表1]对使用环醇的挥发量的评价的实施例
MEA:单乙醇胺(Monoethanolamine)
MIPA:单异丙醇胺(Monoisopropanolamine)
NMP:N-甲基吡咯烷酮(N-methyl pyrrolidone)
THFA:四氢糠醇(Tetrahydrofurfuryl alcohol)
GA:戊二醛(Glutaraldehyde)
PA:叔戊酸(Pivalic acid)
EDG:二乙二醇单***(Diethylene glycol monoethyl ether)
FA:糠醇(Furfuryl alcohol)
DEF:二乙基甲酰胺(Diethylformamide)
DMPA:二甲基丙酰胺(Dimethylpropionamide)
[实施例2]
对金属腐蚀和降解的光刻胶剥离的评价
所述的光刻胶剥离剂的组成和含量如下表2中所列。除下表2所述的成分外,超纯水以35重量%被引入,一种过渡金属缓蚀剂以0.05重量%被引入,以及当使用二种类型的电位金属和金属氧化物缓蚀剂时,一种电位金属和金属氧化物缓蚀剂以各缓蚀剂的0.225重量%被引入,和当使用只一种类型时,重量比为0.05重量%。
[表2]
MEA:单乙醇胺(Monoethanolamine)
MIPA:单异丙醇胺(Monoisopropanolamine)
AEE:氨基乙氧基乙醇(Aminoethoxyethanol)
AEEOAP:氨乙基乙醇胺(Aminoethylethanolamine)
NMP:N-甲基吡咯烷酮(N-methyl pyrrolidone)
THFA:四氢糠醇(Tetrahydrofurfuryl alcohol)
GA:戊二醛(Glutaraldehyde)
PA:叔戊酸(Pivalic acid)
EDG:二乙二醇单***(Diethylene glycol monoethyl ether)
BDG:二乙二醇单丁醚(Diethylene glycol monobutyl ether)
EG:乙二醇(Ethylene glycol)
环丁砜(Sulfolane)
PG:丙二醇(Propylene glycol)
NEF:N-乙基甲酰胺(N-ethylformamide)
FA:糠醇(Furfuryl alcohol)
DEF:二乙基甲酰胺(Diethylformamide)
DMPA:二甲基丙酰胺(Dimethylpropionamide)
TEP:三乙基膦酸(Triethylphosphonic acid)
AP:磷酸铵(Ammonium phosphate)
TMP:磷酸三甲酯(Trimethyl phosphate)
OPA:辛基膦酸(Octylphosphonic acid)
XT:木糖醇(Xylitol)
LG:没食子酸月桂酯(Lauryl gallate)
MBTO:巯基苯并噻二唑(Mercapbenzothiadiazole)
CAT:儿茶酚(Catecho)
HPA:己基膦酸(Hexylphosphonic acid)
DPA:癸基膦酸(Decylphosphonic acid)
DDPA:十二烷基膦酸(Dodecylphosphonic acid)
DAP:磷酸氢二铵(Dibasic ammonium phosphate)
AP:磷酸铵(Ammonium phosphate)
TMPA:三甲基膦酸(Trimethylphosphonic acid)
MBI:巯基苯并咪唑(Mercaptobenzimidazole)
MBO:巯基苯并噁唑(Mercaptobenzoxaole)
MBTO:巯基苯并噻二唑(Mercaptobenzothiadiazole)
MMI:巯基甲基咪唑(Mercaptomethylimidazole)
BPA:丁基膦酸(Butylphosphonic acid)
EPA:乙基膦酸(Ethylphosphonic acid)
TTA:甲苯***(Toluenetriazole)
MG:没食子酸甲酯(Methyl gallate)
BTA苯并***(Benzotriazole)
[表3]
[金属腐蚀]
作为用于制备FPD的金属膜材料,Al、Cu、Ag和金属氧化物作为金属线使用。为了进行这种金属膜材料的腐蚀性评估,将各金属膜材料配线的玻璃基板在剥离温度50℃的条件下浸渍10分钟,并通过金属离子洗脱评估每种膜材料的腐蚀部分。作为金属离子的洗脱,使用ICP-MS分析方法检查金属膜材料的变化部分,并通过使用电子扫描显微镜为实际基板拍摄关于金属膜材料的照片。当用电子扫描显微镜检查时,被评估的金属膜材料用丙酮处理以用作参考。
[用于金属腐蚀的电子扫描显微镜的测定标准]
O:在金属膜材料表面上没有观察到与参照相同程度的腐蚀
Δ:金属膜材料的厚度未减小,然而,在表面上观察到异常现象
X:金属膜材料的厚度减小,并在表面上观察到异常现象
[降解的光刻胶的剥离能力]
关于对降解的光刻胶的剥离能力,在剥离温度50℃的条件下,浸渍已进行干法蚀刻的基板2分钟,以及进行关于去除位于电线的顶部和侧壁的所述的降解的光刻胶(PR)的能力的实验,且结果用电子扫描显微镜鉴定。
[用于金属腐蚀的电子扫描显微镜的测定标准]
O:未观察到降解的PR
Δ:降解的PR局部保留
X:降解的PR未被除去
基于上述实验结果,当使用包含烷醇胺和含巯基的唑类化合物的过渡金属缓蚀剂在制备水性光刻胶剥离剂时,同时实现了彻底剥离严重降解的光刻胶和防止铜线腐蚀。然而,当向其混合水时,通常获得更好的价格竞争力和更强的光刻胶去除能力。
此外,作为用于铝和金属氧化物的缓蚀剂(电位金属和金属氧化物缓蚀剂)被包含在产品内,使用包含烷醇胺和含巯基的唑类化合物的一种过渡金属缓蚀剂制备一种水性光刻胶剥离剂,对效果没有影响的缓蚀剂不需选择。羧酸基缓蚀剂降低了产品的碱性并可能降低剥离能力,且根据类型,一些缓蚀剂对氧化物半导体没有腐蚀抑制功能,而对铝具有腐蚀抑制功能。作为一种能够解决这一问题的缓蚀剂,经实施例鉴定,磷酸盐或膦酸,和脂族没食子酸酯基缓蚀剂是适合的。
[实施例3]
根据缓蚀剂含量的变化,对金属腐蚀和降解的光刻胶剥离能力的评价
[实施例9]
*通过引入5重量%的单乙醇胺、15重量%的四氢糠醇、15重量%的N-甲基吡咯烷酮、29.98重量%的二乙二醇单***、35重量%的超纯水、0.005重量%的正己基膦酸、0.01重量%的巯基甲基咪唑(Mercaptomethylimidazole)和0.005重量%的磷酸癸酯制备一种光刻胶剥离剂
[实施例10]
以实施例9中相同的方式制备一种光刻胶剥离剂,不同在于,所述的二乙二醇单***以28重量%、所述的正己基膦酸以0.5重量%、所述的巯基甲基咪唑以1重量%和所述的磷酸癸酯以0.5重量%引入。
[实施例11]
以实施例9中相同的方式制备一种光刻胶剥离剂,不同在于,所述的二乙二醇单***以24重量%、所述的正己基膦酸以1.5重量%、所述的巯基甲基咪唑以3重量%和所述的磷酸癸酯以1.5重量%引入。
[对比例7]
以实施例9中相同的方式制备一种光刻胶剥离剂,不同在于,所述的二乙二醇单***以29.99重量%、所述的正己基膦酸以0.0025重量%、所述的巯基甲基咪唑以0.005重量%和所述的磷酸癸酯以0.0025%引入。
[对比例8]
以实施例9中相同的方式制备一种光刻胶剥离剂,不同在于,所述的二乙二醇单***以22重量%、所述的正己基膦酸以2重量%、所述的巯基甲基咪唑以4重量%和所述的磷酸癸酯以2重量%引入。
[表4]
实施例9 | 实施例10 | 实施例11 | 对比例7 | 对比例8 | |
金属氧化物腐蚀结果 | O | O | O | X | O |
过渡金属腐蚀结果 | O | O | O | X | O |
电位金属腐蚀结果 | O | O | O | X | O |
降解PR的剥离能力 | O | O | O | Δ | X |
[用于金属腐蚀的电子扫描显微镜的测定标准]
O:在金属膜材料表面上没有观察到与参照相同程度的腐蚀
Δ:金属膜材料的厚度未减小,然而,在表面上观察到异常现象
X:金属膜材料的厚度减小,并在表面上观察到异常现象
[用于金属腐蚀的电子扫描显微镜的测定标准]
O:未观察到降解的PR
Δ:降解的PR局部保留
X:未除去降解的PR
通过以上的描述,显然,本领域的技术人员可以在不脱离本公开的技术思想的范围内进行各种改变和修改。因此,本公开的技术范围不限于在说明书的详细描述中描述的技术范围,而需要由权利要求的范围来限定。
Claims (5)
1.一种用于制造LCD的光刻胶剥离剂组合物,包括:
(a)0.01重量%到3重量%的一种电位金属和金属氧化物缓蚀剂;
(b)0.01重量%到3重量%的一种过渡金属缓蚀剂;
(c)1重量%到20重量%的一种伯烷醇胺;
(d)1重量%到30重量%的一种环状醇;
(e)0.1重量%到40重量%的水;
(f)1重量%到40重量%的非质子极性有机溶剂;和
(g)20重量%到60重量%的质子极性有机溶剂;
其中,
所述过渡金属缓蚀剂选自下组中的任意一种或多种:巯基甲基咪唑、巯基苯并噻二唑和巯基苯并噁唑;
所述电位金属和金属氧化物缓蚀剂选自下组中的任意一种或多种:磷酸二氢铵、磷酸氢二铵、磷酸三铵、甲基膦酸、乙基膦酸、丙基膦酸、丁基膦酸、叔丁基膦酸、戊基膦酸、正己基膦酸、磷酸三乙酯、磷酸三丙酯、辛基膦酸、癸基膦酸、十二烷基膦酸、十四烷基膦酸、十八烷基膦酸、磷酸己酯、磷酸庚酯、辛基磷酸酯、磷酸壬酯、磷酸癸酯和磷酸十二烷基酯。
2.如权利要求1所述的用于制造LCD的光刻胶剥离剂组合物,其中所述的伯烷醇胺选自下组中的任意一种或多种:单乙醇胺、单异丙醇胺、2-氨基-2-甲基-1-丙醇和氨基乙氧基乙醇。
3.如权利要求1所述的用于制造LCD的光刻胶剥离剂组合物,其中所述的环醇选自下组中的任意一种或多种:四氢糠醇、糠醇和异亚丙基甘油。
4.如权利要求1所述的用于制造LCD的光刻胶剥离剂组合物,其中所述的非质子极性有机溶剂选自下组中的任意一种或多种:N-甲基吡咯烷酮、二乙基甲酰胺、二甲基丙酰胺、N-甲基甲酰胺(NMF)、二甲基亚砜(DMSO)、二甲基乙酰胺(DMAc)、二乙基亚砜、二丙基亚砜、环丁砜、吡咯烷酮、N-乙基吡咯烷酮、林可酰胺(Equamide)和烷基羧酰胺。
5.如权利要求1所述的用于制造LCD的光刻胶剥离剂组合物,其中所述的质子极性有机溶剂选自下组中的任意一种或多种:例如乙二醇醚、乙二醇、丙二醇、二乙二醇单乙基醚、二甘醇单丁醚(BDG)、二乙二醇单甲醚、乙二醇单***、乙二醇单丁醚、丙二醇单甲醚、丙二醇单***、丙二醇单丁醚、二乙二醇单***、二乙二醇单丙醚、二乙二醇单丁醚、二丙二醇单甲醚、二丙二醇单***、二丙二醇单丙醚、二丙二醇单丁醚、三甘醇单甲醚、三甘醇单***、三甘醇单丙醚、三甘醇单丁醚、三丙二醇单甲醚、三丙二醇单***、三丙二醇单丙醚和三丙二醇单丁醚。
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