CN107848872A - 高介电常数ltcc介电组合物和装置 - Google Patents
高介电常数ltcc介电组合物和装置 Download PDFInfo
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- CN107848872A CN107848872A CN201680028113.XA CN201680028113A CN107848872A CN 107848872 A CN107848872 A CN 107848872A CN 201680028113 A CN201680028113 A CN 201680028113A CN 107848872 A CN107848872 A CN 107848872A
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- Prior art keywords
- dielectric
- mno
- roasting
- slurry
- clause
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- 239000000203 mixture Substances 0.000 claims abstract description 50
- 239000003989 dielectric material Substances 0.000 claims abstract description 38
- 239000002243 precursor Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 59
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000002002 slurry Substances 0.000 claims description 43
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 40
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims description 33
- 229910052681 coesite Inorganic materials 0.000 claims description 30
- 229910052906 cristobalite Inorganic materials 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 229910052682 stishovite Inorganic materials 0.000 claims description 30
- 229910052905 tridymite Inorganic materials 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 17
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 16
- 229910052793 cadmium Inorganic materials 0.000 claims description 15
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 239000002305 electric material Substances 0.000 claims 2
- 239000011133 lead Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 31
- -1 barium strontium titanium tungsten Chemical compound 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 32
- 239000000919 ceramic Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- DWLZZJZUNPJEOQ-UHFFFAOYSA-N [W]=O.[Si].[Ti].[Sr].[Ba] Chemical compound [W]=O.[Si].[Ti].[Sr].[Ba] DWLZZJZUNPJEOQ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/16—Compositions for glass with special properties for dielectric glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/14—Compositions for glass with special properties for electro-conductive glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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Abstract
电子装置是由介电组合物生产的,所述介电组合物包含前体材料的混合物,通过焙烧,其形成了包含钡‑锶‑钛‑钨‑硅氧化物的介电材料。
Description
发明背景
1.发明领域
本发明涉及介电组合物,且更具体地涉及钡-锶-钛-硅-钨酸盐基介电组合物,其表现出介电常数K=200-500,并且其可以用于低温共烧陶瓷(LTCC)应用,其中贵金属金属化。
2.相关领域描述
现有技术在用于无线应用的LTCC***中所用的材料使用了在测量频率1MHz时介电常数K=4-8和Q因子为约400-1000的介电材料。这通常是通过使用混合了高浓度的BaO-CaO-B2O3低软化温度玻璃的陶瓷粉末来实现的,所述低软化温度玻璃使得陶瓷低温致密化(900℃或者更低)。这种大体积玻璃可具有降低所述陶瓷的K和Q值的不期望的效果。Q因子=1/Df,其中Df是介电损耗角正切。在电磁干扰滤波器和带通滤波器应用中存在着对于大于10的高K值的介电材料日益增加的需求。但是,更大的挑战是在低于900℃的温度烧结高K介电材料。
发明内容
本发明涉及介电组合物,且更具体地涉及钡-锶-钛-硅-钨酸盐基介电组合物,所述组合物表现出介电常数K=200-500,并且其可以用于低温共烧陶瓷(LTCC)应用,其中贵金属金属化。在电磁干扰滤波器应用中存在着对于大于100的非常高K值的介电材料日益增加的需求。
宽泛地,本发明的陶瓷材料包括主体材料,其是通过混合适量的BaCO3,SrCO3,TiO2,WO3和SiO2前体,将这些材料在含水介质中一起研磨到粒度D50为约0.2-1.5μm来制备的。将这种浆体干燥并在约800-1000℃煅烧约1-5小时来形成包括BaO,SrO,TiO2,WO3和SiO2的主体材料。然后将所形成的主体材料机械粉碎并且与助熔剂混合,并且在含水介质中再次研磨到粒度D50为约0.5-1.0μm。将该研磨的陶瓷粉末干燥并粉碎来制备细分散的粉末。所形成的粉末可以被压成圆柱形粒料,并在约800-1000℃,或者775至约900℃,优选约840℃至约900℃,更优选约820至约890℃,仍然更优选约845至约885℃和最优选在约880℃的温度下焙烧约1至约200分钟,优选约5至约100分钟,更优选约10至约50分钟,仍然更优选约20至约40分钟和最优选约30分钟。
本发明的一个实施方案是一种组合物,所述组合物包含前体材料的混合物,通过焙烧,其形成了包含钡-锶-钛-硅-钨氧化物主体材料的无铅和无镉的介电材料。
在一个优选的实施方案中,该主体材料不包括铅。在一个可选的优选的实施方案中,该主体材料不包括镉。在一个更优选的实施方案中,该主体材料不包括铅和镉。
在一个优选的实施方案中,该主体材料包含(i)20-50wt%的BaO,优选25-45wt%的BaO,更优选28-39wt%的BaO,或者30-40wt%的BaO,(ii)15-35wt%的SrO,优选18-28wt%的SrO,或者20-30wt%的SrO,(iii)20-40wt%的TiO2,优选25-35wt%的TiO2,(iv)0.1-10wt%的WO3,优选0.1-5.0wt%的WO3,更优选0.5-5.0wt%的WO3,和(v)0.01-5.0wt%的SiO2,优选0.01-2.5wt%的SiO2,更优选0.05-2.0wt%的SiO2。
在一个优选的实施方案中,该主体材料包含(i)15-50wt%的BaO,优选20-45wt%的BaO,更优选25-40wt%的BaO,(ii)5-45wt%的SrO,优选10-38wt%的SrO,更优选15-35wt%的SrO,(iii)10-50wt%的TiO2,优选20-40wt%的TiO2,(iv)0.1-30wt%的WO3,优选0.1-25wt%的WO3,更优选0.5-20wt%的WO3,和(v)0.01-10wt%的SiO2,优选0.01-7wt%的SiO2,更优选0.05-5wt%的SiO2。全部百分比,时间,温度和其他参数值假定是用修正词“约”作为前缀的。
在另一个实施方案中,介电组合物包括在前述两段任一段中所公开的主体材料以及0.1-18wt%的ZnO,优选3-13wt%的ZnO,0.01-6wt%的B2O3,优选0.01-5.0wt%的B2O3,0.01-5.0wt%的LiF,优选0.01-2wt%的LiF,0.01-5.0wt%的CuO,优选0.01-2wt%的CuO,和0.01-3.0wt%,优选0.01-2wt%的选自MnO2,Mn2O3和MnO的至少一种。
在另一个实施方案中,介电组合物包括在前述段中所公开的主体材料以及0.1-15wt%的ZnO,优选1-10wt%的ZnO,0.1-10wt%的B2O3,优选0.1-5wt%的B2O3,0.01-5wt%的LiF,优选0.01-2wt%的LiF,0.01-5wt%的CuO,优选0.01-2wt%的CuO,和0.01-5wt%,优选0.01-2wt%的选自MnO2,Mn2O3和MnO的至少一种。
在另一个实施方案中,本发明的主体介电材料是一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
在另一个实施方案中,本发明的介电材料包括前段的主体材料以及
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
在另一个实施方案中,本发明的主体介电材料是一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约26.0wt%至约37.0wt%的BaO;
约23.0wt%至约34.0wt%的SrO;
约32.0wt%至约42.0wt%的TiO2;
约0.1wt%至约5.0wt%的WO3;和
约0.01wt%至约2.50wt%的SiO2。
在另一个实施方案中,本发明的介电材料包括前段的主体材料以及
约2.0至约13.0wt%的BaCO3;
约3.0至约13.0wt%的ZnO;
约0.01至约5.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
本文的任何介电材料可以用作介电浆料的固体部分。本文的介电浆料包括载体,如下文所述的。
在另一个实施方案中,该主体材料包含(i)15-50wt%的BaO,优选20-45wt%的BaO,更优选25-40wt%的BaO,(ii)5-45wt%的SrO,优选10-35wt%的SrO,更优选15-35wt%的SrO,(iii)10-50wt%的TiO2,优选20-40wt%的TiO2,(iv)0.1-30wt%的WO3,优选0.1-25wt%的WO3,更优选0.5-20wt%的WO3,和(v)0.01-10wt%的SiO2,优选0.01-7wt%的SiO2,更优选0.05-5wt%的SiO2。
在另一个实施方案中,介电组合物包括前段公开的主体材料以及0.1-15wt%的BaCO3,优选2.0-10wt%的BaCO3,1-10wt%的ZnO,0.1-15wt%的H3BO3,优选1-10wt%的H3BO3,0.01-2wt%的LiF,0.01-2wt%的CuO,和0.01-2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
在另一个实施方案中,该主体材料包含(i)20-40wt%的BaO,优选25-35wt%的BaO,(ii)20-40wt%的SrO,优选25-35wt%的SrO,(iii)27-47wt%的TiO2,优选32-42wt%的TiO2,(iv)0.1-10wt%的WO3,优选0.5-5.0wt%的WO3,和(v)0.01-5.0wt%的SiO2,优选0.05-2.0wt%的SiO2。
在另一个实施方案中,介电组合物包括上面公开的主体材料以及2-13wt%的BaCO3,优选2.0-12.0wt%的BaCO3,3.0-13.0wt%的ZnO,0.01-5wt%的H3BO3,优选0.1-5.0wt%的H3BO3,0.01-2.0wt%的LiF,0.01-2.0wt%的CuO,和0.01-2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
本发明的一个实施方案是一种形成电子部件的方法,其包括:
(a1)将本文公开的任何介电组合物施用到基底上,或者
(a2)将包含本文公开的任何介电组合物的浆料施用到基底上,或者
(a3)将本文公开的任何介电组合物的多个粒子压实来形成整料复合基底;和
(b)将该基底在足以烧结该介电组合物的温度下焙烧。
本发明的一个实施方案是一种形成电子部件的方法,其包括:
(a1)将本文公开的任何介电组合物施用到基底上,或者
(a2)将包含本文公开的任何介电组合物的带施用到基底上,或者
(a3)将本文公开的任何介电组合物的多个粒子压实来形成整料复合基底;和
(b)将该基底在足以烧结该介电组合物的温度下焙烧。
本发明的一个实施方案是一种共焙烧本文别处公开的任何介电材料或者浆料的交替层和至少一种介电常数小于100的带或者浆料的交替分隔层来形成多层基底的方法,其中交替层具有不同的介电常数。
本发明的一个实施方案是一种电气部件或者电子部件,其在焙烧之前包括本文所公开的任何介电材料或者浆料以及包含以下组分的导电浆料:
a.60-90wt%Ag+Pd+Pt+Au,
b.1-10wt%的选自过渡金属的硅化物,碳化物,氮化物和硼化物的添加剂,
c.0.5-10wt%的至少一种玻璃粉,
d.10-40wt%的有机部分。
本发明的电气部件或者电子部件可以是电磁干扰滤波器,高Q谐振器,带通滤波器,无线包装***及其组合。
具体实施方式
LTCC(低温共烧陶瓷)是一种多层玻璃陶瓷基底技术,其与低电阻金属导体例如Ag,Au,Pt或者Pd或者其组合在相对低的焙烧温度(小于1000℃)共焙烧。有时候它被称作“玻璃陶瓷”,因为它的主要组成可以由玻璃和氧化铝或者其他陶瓷填料构成。一些LTCC配料是重结晶玻璃。本文的玻璃可以以玻璃料形式提供,其可以原位形成或者加入组合物中。在一些情形中,可以使用贱金属例如镍及其合金,理想地是在非氧化性气氛中例如氧气分压为10-12-10-8大气压的气氛中进行。还可以在环境空气中焙烧本文公开的介电组合物。“贱金属”是非金、银、钯和铂的任何金属。合金金属可以包括Mn,Cr,Co和/或Al。
将由介电材料浆体流延的带切割,并且形成称作通路的孔,来使得层之间产生电连接。将该通路用导电浆料填充。然后印刷电路图案,同时根据需要共焙烧电阻器。将印刷基底的多层堆叠。将热和压力施加到该堆叠体来将层结合在一起。然后进行低温(<1000℃)烧结。将该烧结的堆叠体锯切到最终尺寸和根据需要完成后焙烧加工。
可用于汽车应用的多层结构可以具有约5个陶瓷层,例如3-7或者4-6个。在RF应用中,一种结构可以具有10-25个陶瓷层。作为布线基底,可以使用5-8个陶瓷层。
介电浆料。用于形成该介电层的浆料可以通过将有机载体与本文公开的原料介电材料混合来获得。还有用的是前体化合物(碳酸盐,硝酸盐,硫酸盐,磷酸盐),其通过焙烧转化成这样的氧化物和复合氧化物,如上文所述。该介电材料是如下来获得的:选择含有这些氧化物的化合物,或者这些氧化物的前体,和将它们以适当的比例混合。测定这样的化合物在原料介电材料中的比例,以使得在焙烧后,可以获得期望的介电层组合物。该原料介电材料(如本文别处公开的)通常是以平均粒度为约0.1至约3微米,和更优选约1微米或更小的粉末形式来使用的。
有机载体。本文的浆料包括有机部分。该有机部分是或者包括有机载体,其是在有机溶剂中的粘合剂或者在水中的粘合剂。本文所用的粘合剂的选择不是关键的;常规粘合剂例如乙基纤维素,聚乙烯基丁醇,乙基纤维素和羟丙基纤维素及其组合适于与溶剂一起使用。该有机溶剂也不是关键的,并且可以根据具体施用方法(即,印刷或者制片),从常规有机溶剂中选择,例如丁基卡必醇,丙酮,甲苯,乙醇,二乙二醇丁醚;2,2,4-三甲基戊二醇单异丁酸酯α-萜品醇;β-萜品醇;γ-萜品醇;十三烷醇;二乙二醇***二乙二醇丁醚(Butyl)和丙二醇;及其混合物,在商标名下销售的产品获自Eastman Chemical Company,Kingsport,TN;在商标名和下销售的那些获自Dow Chemical Co.,Midland,MI。
对于本发明介电浆料的有机部分没有特别限制。在一个实施方案中,本发明的介电浆料包括约10wt%至约40wt%的有机载体;在另一方案中约10wt%至约30wt%。通常所述浆料包含约1-5wt%的粘合剂和约10-50wt%的有机溶剂,并且其余是介电组分(固体部分)。在一个实施方案中,本发明的介电浆料包括约60至约90wt%的本文别处公开的固体部分,和约10wt%至约40wt%的此处和前段所述的有机部分。如果期望,本发明的浆料可以包含最高达约10wt%的其他添加剂例如分散剂,增塑剂,介电化合物和绝缘化合物。
填料。为了使得不同介电组合物的带层之间的膨胀失配最小化,填料例如堇青石,氧化铝,锆石,熔融氧化硅,铝硅酸盐及其组合可以以1-30wt%,优选2-20wt%和更优选2-15wt%的量加入本文的一种或多种介电浆料中。
焙烧。然后,介电堆叠体(两个或更多个层)在一定气氛中焙烧,其是根据内电极层形成浆料中导体的类型来确定的。在内电极层是由贱金属导体例如镍和镍合金形成的情况中,该焙烧气氛的氧气分压可以是约10-12至约10-8大气压。应当避免在低于约10-12大气压的分压烧结,因为在这样的低压力,导体会不正常烧结,并且会与介电层分离。在氧气分压高于约10-8大气压时,内电极层会氧化。氧气分压约10-11至约10-9大气压是最优选的。但是,还原性气氛(H2,N2或者H2/N2)会不期望地将介电浆料中的Bi2O3还原成金属铋。
用于本文公开的LTCC组合物和装置的应用包括带通滤波器(高带通或者低带通),电磁干扰滤波器,高Q谐振器,无线包装***,用于通讯的无线发射机和接收机,包括蜂窝式应用,功率放大器模块(PAM),RF前端模块(FEM),WiMAX 2模块,LTE-高级模块,传输控制单元(TCU),电动式动力转向器(EPS),发动机管理***(EMS),各种传感器模块,雷达模块,压力传感器,摄像机模块,小型调谐器模块,用于装置和部件的薄型材模块,和IC测试仪板。带通滤波器包含两个主要零件,一个是电容器和另一是电感器。低K材料对于设计电感器是良好的,但是不适于设计电容器,这归因于要求更大有效区来产生足够的电容量。高K材料将产生相反结果。
实施例
提供下面的实施例来说明本发明优选的方面,并非打算限制本发明的范围。
如下表可见,混合适量的BaCO3,SrCO3,TiO2,WO3和SiO2,然后一起在含水介质中研磨到粒度D50为约0.2-1.5μm。将这种浆体干燥并在约800-1000℃煅烧约1-5小时来形成包括BaO,SrO,TiO2,WO3和SiO2的主体材料。所形成的主体材料然后机械粉碎和与助熔剂混合,并且在含水介质中再次研磨到粒度D50为约0.5-1.0μm。将该研磨的陶瓷粉末干燥和粉碎来产生细分散的粉末。将所形成的粉末压成圆柱形粒料和在约880℃的温度焙烧约30分钟。配方是以重量百分比给出的。
表1.主体组合物
表2.介电配方1-2
配方 | 1 | 2 |
主体A | 80.81wt% | --- |
主体B | --- | 85.08wt% |
主体C | --- | --- |
BaCO3 | 7.29wt% | 5.84wt% |
ZnO | 5.39wt% | 4.06wt% |
H3BO3 | 5.46wt% | 4.17wt% |
LiF | 0.47wt% | 0.42wt% |
CuO | 0.47wt% | 0.35wt% |
MnO2 | 0.11wt% | 0.09wt% |
表3给出了表2所述的配方1和2在880℃焙烧30分钟的烧结的圆盘的电学性能。
表3.配方1和2在880℃烧结30分钟的圆盘的K,Q和Df数据:
配方1的烧结圆盘 | 配方2的烧结圆盘 | ||
K@1MHz | 407 | K@1MHz | 204 |
Q@1MHz | 460 | Q@1MHz | 201 |
Df% | 0.2 | Df% | 0.5 |
表4是配方1和2在880℃加热30分钟后的组成。
表4.配方1和2在880℃加热30分钟后的组成:
本发明进一步通过下面的条款来说明。
条款1.一种组合物,所述组合物包含前体的混合物,通过焙烧,其形成了包含钡-锶-钛-钨-硅氧化物的介电材料。
条款2.根据条款1的组合物,其中该混合物进一步包含前体,以使得通过焙烧,该介电材料进一步包含选自锌,硼,锂,氟,铜和锰的一种或多种掺杂剂。
条款3.根据条款1或者2的组合物,其中该介电材料表现出介电常数大于100。
条款4.根据条款1的组合物,其包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
条款5.根据条款4的组合物,其中该前体混合物进一步包含前体,以使得通过焙烧,产生这样的介电材料,所述介电材料进一步包含选自以下的至少一种:
约0.1至约15.0wt%的ZnO;
约0.1至约10.0wt%的B2O3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款6.根据条款2的组合物,其包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约15.0wt%的ZnO;
约0.1至约10.0wt%的B2O3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款7.一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
条款8.条款7的无铅和无镉的介电浆料,其进一步包含选自以下的至少一种:
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款9.一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款10.一种形成电子部件的方法,其包括:
将条款7-9任一项的介电浆料施用到基底;和
将该基底在足以烧结该介电浆料的温度下焙烧。
条款11.条款10的方法,其中该焙烧是在约800℃至约1000℃的温度下进行。
条款12.条款10的方法,其中该焙烧是在空气中进行的。
条款13.根据条款1的组合物,其包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
条款14.根据条款13的组合物,其中该前体混合物进一步包含选自以下的至少一种:
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款15.根据条款14的组合物,其中该前体混合物包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款16.一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
条款17.条款16的无铅和无镉的介电浆料,其进一步包含选自以下的至少一种:
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款18.一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2,Mn2O3和MnO的至少一种。
条款19.一种形成电子部件的方法,其包括:
将条款16-18任一项的介电浆料施用到基底上;和
将该基底在足以烧结介电浆料的温度下焙烧。
条款20.条款19的方法,其中该焙烧是在约800℃至约1000℃的温度下进行。
条款21.条款19的方法,其中该焙烧是在空气中进行的。
条款22.条款1-21任一项的无铅和无镉的介电材料,其中在焙烧后,该焙烧的组合物表现出介电常数K为100-500。
条款23.一种电气部件或者电子部件,其包含在焙烧之前,条款1-21任一项的无铅和无镉的介电材料或者浆料,和包含以下组分的导电浆料:
60-90wt%Ag+Pd+Pt+Au,
1-10wt%的选自过渡金属的硅化物,碳化物,氮化物和硼化物的添加剂,
0.5-10wt%的至少一种玻璃粉,
10-40wt%的有机部分。
条款24.条款23的电气部件或者电子部件,其中该电气部件或者电子部件选自电磁干扰滤波器,高Q谐振器,带通滤波器,无线包装***及其组合。
条款25.一种形成电子部件的方法,其包括:
(a1)将条款1-21任一项的介电组合物施用到基底上,或者
(a2)将包含条款1-21任一项的介电组合物的带施用到基底上,或者
(a3)将条款1-21任一项的介电组合物的多个粒子压实来形成整料复合基底;和
(b)将该基底在足以烧结该介电组合物的温度下焙烧。
条款26.条款25的方法,其中该焙烧是在约800℃至约1000℃的温度下进行的。
条款27.条款25的方法,其中该焙烧是在约840℃至约900℃的温度下进行的。
条款28.条款25-27任一项的方法,其中该焙烧是在空气中进行的。
条款29.一种共焙烧条款1-21任一项的介电材料的至少一层与介电常数小于100的带或浆料的至少一个交替分隔层来形成多层基底的方法,其中交替层具有不同的介电常数。
条款30.条款29的方法,其中该焙烧是在约800℃至约1000℃的温度下进行的。
条款31.条款29的方法,其中该焙烧是在约840℃至约900℃的温度下进行的。
条款32.条款29-31任一项的方法,其中该焙烧是在空气中进行的。
另外的优点和改变将是本领域技术人员容易想到的。所以,本发明在它较宽的方面不限于本文所示和所述的具体细节和示例性实施例。因此,在不脱离附加的权利要求和它们的等价物所定义的本发明一般理念的主旨或者范围的情况下,可以进行各种改变。
Claims (14)
1.一种组合物,所述组合物包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
2.根据权利要求1所述的组合物,其中该前体的混合物进一步包含前体,以使得通过焙烧,产生了这样的介电材料,该介电材料进一步包含选自以下的至少一种:
约0.1至约15.0wt%的ZnO;
约0.1至约10.0wt%的B2O3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2、Mn2O3和MnO的至少一种。
3.根据权利要求2所述的组合物,所述组合物包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约15.0wt%的ZnO;
约0.1至约10.0wt%的B2O3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2、Mn2O3和MnO的至少一种。
4.一种无铅和无镉的介电浆料,其包含固体部分,其中该固体部分包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2、Mn2O3和MnO的至少一种。
5.一种形成电子部件的方法,其包括:
将权利要求1-4任一项的介电浆料或者介电材料施用到基底上;和
将该基底在足以烧结该介电浆料或者介电材料的温度下焙烧。
6.根据权利要求所述的方法,其中该焙烧是在约800℃至约1000℃的温度下进行的。
7.根据权利要求6所述的方法,其中该焙烧是在空气中进行的。
8.一种组合物,所述组合物包含前体的混合物,通过焙烧,其形成了包含以下组分的介电材料:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;和
约0.01wt%至约12.0wt%的SiO2。
9.根据权利要求8所述的组合物,其中该前体的混合物进一步包含选自以下的至少一种:
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2、Mn2O3和MnO的至少一种。
10.根据权利要求9所述的组合物,其中该前体的混合物包含:
约20.0wt%至约45.0wt%的BaO;
约10.0wt%至约38.0wt%的SrO;
约15.0wt%至约47.0wt%的TiO2;
约0.1wt%至约25.0wt%的WO3;
约0.01wt%至约12.0wt%的SiO2;
约0.1至约17.0wt%的BaCO3;
约0.1至约15.0wt%的ZnO;
约0.1至约15.0wt%的H3BO3;
约0.01至约2.0wt%的LiF;
约0.01至约2.0wt%的CuO;和
约0.01至约2.0wt%的选自MnO2、Mn2O3和MnO的至少一种。
11.一种形成电子部件的方法,其包括:
将权利要求1-4,8-10任一项的介电浆料或者介电材料施用到基底上;和
将该基底在足以烧结该介电浆料或者介电材料的温度下焙烧。
12.根据权利要求11所述的方法,其中该焙烧是在约800℃至约1000℃的温度下进行的。
13.根据权利要求12所述的方法,其中该焙烧是在空气中进行的。
14.一种电气部件或者电子部件,其包含在焙烧之前的权利要求1-4,8-10任一项的无铅和无镉的介电材料或者浆料,和包含以下组分的导电浆料:
60-90wt%Ag+Pd+Pt+Au,
1-10wt%的选自过渡金属的硅化物、碳化物、氮化物和硼化物的添加剂,
0.5-10wt%的至少一种玻璃粉,
10-40wt%的有机部分。
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TW201710215A (zh) | 2017-03-16 |
CN107848891A (zh) | 2018-03-27 |
TWI620204B (zh) | 2018-04-01 |
TW201712693A (zh) | 2017-04-01 |
KR20180008648A (ko) | 2018-01-24 |
CN107848891B (zh) | 2021-08-20 |
WO2017023890A1 (en) | 2017-02-09 |
KR20180008605A (ko) | 2018-01-24 |
US10494306B2 (en) | 2019-12-03 |
CN107848872B (zh) | 2020-11-06 |
US20180170813A1 (en) | 2018-06-21 |
KR102014336B1 (ko) | 2019-08-26 |
KR102059804B1 (ko) | 2019-12-27 |
WO2017023452A1 (en) | 2017-02-09 |
US10065894B2 (en) | 2018-09-04 |
US20170240471A1 (en) | 2017-08-24 |
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