CN107546284A - A kind of reverse wedge body light trapping structure and preparation method thereof - Google Patents
A kind of reverse wedge body light trapping structure and preparation method thereof Download PDFInfo
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- CN107546284A CN107546284A CN201710568412.9A CN201710568412A CN107546284A CN 107546284 A CN107546284 A CN 107546284A CN 201710568412 A CN201710568412 A CN 201710568412A CN 107546284 A CN107546284 A CN 107546284A
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- reverse wedge
- wedge body
- light trapping
- trapping structure
- periodicity
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a kind of periodicity reverse wedge body light trapping structure that can lift thin film silicon solar cell efficiency, generally periodic unit light trapping structure forms, and each unit is covered with layer of transparent passivating film by reverse wedge cube composition on unit light trapping structure.Its side of reverse wedge body is with silicon face into 54.7 ° of angles, and the upper bottom surface length of reverse wedge body is different from width, and its bottom surface is a line parallel with upper bottom surface.This structure proposed by the present invention is easy to process, and with angular spectrum scope greatly and spectral absorption it is high the characteristics of, be advantageous to raising thin-film silicon cell extinction efficiency.
Description
Technical field
The present invention relates to new cleaning fuel and micro-nano photon field, and in particular to a kind of periodicity of solar cell
Reverse wedge body light trapping structure and preparation method thereof.
Background technology
Prevailing photovoltaic cell is crystal silicon cell in the market.It has technical maturity, stable performance, light
The advantages of photoelectric transformation efficiency is high, at present more than 19%, the peak efficiency of cell piece has also reached the component efficiency of commodity production
To 25.6%.Although by effort for many years, the production cost of battery has declined to a great extent, still above traditional coal electricity into
This.In order to further reduce cost, battery develops into the second generation, i.e. thin-film silicon cell.
Because light loss is larger, conversion efficiency reduces thin film silicon solar cell.At present, it is to solve light using light trapping structure
Learn one of effective ways of loss.Light trapping structure is exactly that some special structures are made on the surface of solar cell, and this can be with
Increase the absorptivity of sunshine.
The content of the invention
For above-mentioned technical disadvantages, the present invention devises a kind of periodicity reverse wedge body light trapping structure, and the structure can increase
Strong light absorption rate, and can be prepared at low cost on large area monocrystalline silicon piece.
Due to the sunken light ability that there is the anti-reflection ability of gradually changed refractive index and periodic structure and bring simultaneously, so it is to whole
The light absorbs of individual sunshine wave band are all preferable.
Because the angle of two basic vector, length and its length of side of bottom surface two can change, there is greatly optimization space.
The present invention adopts the following technical scheme that：
A kind of light trapping structure for thin-film solar cells, it is characterised in that its body structure surface has periodic reverse wedge shape
Body, and on the surface covered with one layer of passivating film.
Its side of reverse wedge body is with silicon face into 54.7 ° of angles, and the upper bottom surface length of reverse wedge body is different from width, and it is gone to the bottom
Face is a line parallel with upper bottom surface.Moreover, the preparation method of compound curved surface light trapping structure of the present invention is characterised by, this is multiple
The manufacture method for closing curved surface light trapping structure has following process：
Using the process of interference lithography and wet etching method manufacturing cycle property reverse wedge body light trapping structure, and,
The process that passivation layer is formed on above-mentioned compound curved surface light trapping structure.
In the resist mask required for preparing light trapping structure, equably periodic distribution elipse hole.Elliptical aperture
Its major radius of hole and short radius are adjustable.The angle of basic vector can be any angle, and basic vector length can be the same or different.
The structure is placed in the side to light of battery, for reducing the reflectivity of surface light, and increases light in solar cell
Internal light path, so as to increase the short-circuit current density of battery.
Compared with prior art, the present invention has following advantageous property.
First, the structure is made up of periodicity reverse wedge body, possesses the double action of sunken light and anti-reflection, and reverse wedge body is non-right
Claim structure, add light trapping effect.
2nd, the basic vector length of the structure, angle is adjustable, and the length of side of upper bottom surface two is adjustable, has stronger sunken light ability.
3rd, manufacturing cycle reverse wedge body light trapping structure method proposed by the present invention is two step interference lithographies and wet etching
Method, can low cost the good reverse wedge body light trapping structure of preparation large-area uniformity, the method before this is do not reach.
Brief description of the drawings
Fig. 1 is the picture for the triangular lattice periodicity reverse wedge body light trapping structure prepared.
Fig. 2 is the spectral response of structure.
Fig. 3 is that the angular spectrum of structure responds.
Embodiment
Below in conjunction with the accompanying drawings and the present invention is further described for specific implementation.
By taking the sphenoid light trapping structure of triangular crystal lattice shape as an example.Light knot is fallen into the periodicity reverse wedge body of triangular crystal lattice distribution
The specific pattern of structure as shown in figure 1, its cycle is the triangular lattice cycle, with silicon face, into 54.7 ° of angles, fall by each of which side
The upper bottom surface length of sphenoid is different from width, and its bottom surface is a line parallel with upper bottom surface.
The present invention prepares the step of light trapping structure and is.
Step 1, the suitable silicon oxide film of a layer thickness is formed on the silicon chip that crystal orientation is 100.
Step 2, periodicity elipse hole mask is prepared on resist using the method for interference lithography.According to photoetching
Parameter difference causes the shape of elipse hole different, and the angle of the basic vector of elipse hole distribution is also different from length.
Step 3, the elipse hole on resist is delivered to the silica as substrate by the use of chemically or physically method
Surface, including but not limited to reactive ion etching method, wet etching method.
Step 4, remnants resist is washed away, the method using anisotropic etching is having what earth silicon mask covered
Silicon face etches periodic reverse wedge body.
Step 5, remnants silicon dioxide layer is washed away with hydrofluoric acid, obtains the periodicity reverse wedge body light trapping structure on silicon.
Step 6, by covering one layer of passivation the methods of vacuum sputtering film forming on periodicity reverse wedge body light trapping structure surface
Film.
Illustrated with reference to embodiment.
Embodiment：
, it is necessary to which the structure prepared is the triangular crystal lattice cycle in the present embodiment, two basic vector angles of lattice are 60 °, two basic vectors length
Degree is 1.5 μm, a length of 1.2 μm of the long side of each reverse wedge body in structure, a length of 1 μm of short side, and depth is 0.7 μm, using list
Crystal silicon is shown in Fig. 1 as substrate, scanning electron microscope (SEM) photograph in kind.
One layer of 200nm silicon dioxide layer is formed in the silicon base that crystal orientation is 100 first by the method for high-temperature oxydation,
One layer of AZ6112 agent film against corrosion is uniformly coated in the upper surface of substrate followed by spin coating method, is done on the resist film
After relating to exposure twice, make resist development and produce the mask with cycle elipse hole structure.Made in this step dry
The light source for relating to striped is wavelength 405nm semiconductor laser, the angle for having 60 ° between second of exposure directions for the first time,
Time for exposure first time 20s, second of time for exposure 17s, the interference angle of photoetching is 15.5 °.
Using the method for hydrofluoric acid wet etching, the elipse hole on resist mask is squeezed into silica as former state
Layer, the cycle elipse hole finally formed in silicon dioxide layer as mask.
Using the method for anisotropic wet etch, formed periodically on silicon using silica cycle elipse hole
Reverse wedge body, the potassium hydroxide and 8% isopropyl alcohol mixture that etching reagent is 6%, 85 degrees Celsius of etching temperature, during etching
Between 8 minutes.
The silica of residual is washed away using hydrofluoric acid, obtains periodicity reverse wedge body light trapping structure.
Passivating film is formed on silicon light trapping structure and eliminates surface dangling bonds.Passivating film utilizes vacuum sputtering film forming
Silicon nitride film, thickness 30nm.
This structure is formed in 3 μm of crystal silicon battery.
Accompanying drawing 2,3 is that the spectrum of the reverse wedge body battery and traditional inverted pyramid battery contrasts with angular spectrum response.It is golden
Word tower is taper, and its side and bottom surface angle are 54.7 °, and the cycle is 1.5 microns, and dutycycle is 85% optimized.
It can be seen from accompanying drawing 2 in terms of spectral response, two kinds of structures have good sunken light function, in short-wave band two
The extinction efficiency difference of person is little, but the long-wave band reverse wedge body light trapping structure more concentrated in solar energy compares inverted pyramid
Light trapping structure assimilation effect is more preferable, which results in reverse wedge body light trapping structure in terms of short-circuit current density is lifted more added with excellent
Gesture.
It can be seen from accompanying drawing 3 in terms of angular spectrum response, reverse wedge body is substantially better than inverted pyramid in full angle, and
Its short-circuit current density has preferable performance within 60 ° of incidences, with angle reduced rate less than 2%.Even if incidence angle reaches 80 °, fall
The short-circuit current density of sphenoid structure can still keep 20mA/cm2 or so, and this can be avoided using solar light tracking system,
And then reduce the cost of solar power generation.
Claims (4)
1. a kind of periodicity reverse wedge physique structure that can lift thin-film silicon cell efficiency, it is characterised in that the structure has：
There is periodic reverse wedge physique structure on anti-reflection structure body, surface；And transparent passivating film, formed in above-mentioned reverse wedge body
In structure；
Its side of reverse wedge body is with silicon face into 54.7 ° of angles, and the upper bottom surface length of reverse wedge body is different from width, and its bottom surface is
One line parallel with upper bottom surface.
2. light trapping structure according to claim 1, wherein,
Above-mentioned periodic structure can be in that a variety of lattice-likes configure, and including but not limited to oblique lattice, tetragonal, rectangle lattice are brilliant
Lattice swears that size and angle can change.
A kind of 3. preparation method of periodicity reverse wedge body light trapping structure, it is characterised in that the manufacture of the periodicity reverse wedge body
Method has following process：
Using two step interference photoetching method combination anisotropic wet etch methods manufacture surface there is periodicity reverse wedge body to fall into
The process of photo structure, and,
The process that passivation layer is formed on above-mentioned periodicity reverse wedge body light trapping structure.
4. the preparation method of periodicity reverse wedge body light trapping structure according to claim 3, wherein,
There is the process of the light trapping structure of periodicity reverse wedge body using interference technique manufacture surface,
Comprise the steps of：
On silicon chip formed suitable thickness silicon oxide film the step of；
Agent film against corrosion is formed in substrate the step of；
Interference lithography exposure is carried out on the agent film against corrosion, periodic elipse hole array light is left on agent film against corrosion
Strong information；
The method of interference lithography includes but is not limited to the interference of the step of dual-beam two, the step interference of dual-beam four, Three-beam Interfere etc.；
The step of making above-mentioned agent film against corrosion develop to mask after the exposure of above-mentioned striped；
Using resist as mask, cyclic array is etched on silicon oxide film the step of；
It is mask periodicity reverse wedge body is etched on silicon the step of using silicon oxide film cyclic array.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615776A (en) * | 2018-04-26 | 2018-10-02 | 中国科学院物理研究所 | Deflection surfaces structure and corresponding preparation method |
| CN111599877A (en) * | 2019-05-29 | 2020-08-28 | 电子科技大学 | Super-surface light trapping structure for solar cell and preparation method thereof |
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| CN102270695A (en) * | 2010-12-25 | 2011-12-07 | 河南科技大学 | Method for making V-shaped groove texture surface on surface of monocrystalline silicon solar cell |
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