CN107046066A - With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell - Google Patents
With suede structure monocrystalline silicon piece and preparation method thereof and silicon solar cell Download PDFInfo
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- CN107046066A CN107046066A CN201710139775.0A CN201710139775A CN107046066A CN 107046066 A CN107046066 A CN 107046066A CN 201710139775 A CN201710139775 A CN 201710139775A CN 107046066 A CN107046066 A CN 107046066A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 177
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 118
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 117
- 239000010703 silicon Substances 0.000 title claims abstract description 117
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000011148 porous material Substances 0.000 claims abstract description 49
- 238000012545 processing Methods 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 63
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 49
- 229910052709 silver Inorganic materials 0.000 claims description 48
- 239000004332 silver Substances 0.000 claims description 48
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 39
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 36
- 238000000137 annealing Methods 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 25
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 21
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005984 hydrogenation reaction Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 32
- 238000001579 optical reflectometry Methods 0.000 abstract description 13
- 238000002310 reflectometry Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 10
- 230000009466 transformation Effects 0.000 abstract description 9
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 38
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- 239000000243 solution Substances 0.000 description 22
- 239000008367 deionised water Substances 0.000 description 20
- 229910021641 deionized water Inorganic materials 0.000 description 20
- 229910052757 nitrogen Inorganic materials 0.000 description 19
- 239000004411 aluminium Substances 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000004528 spin coating Methods 0.000 description 12
- 238000002604 ultrasonography Methods 0.000 description 12
- 238000002207 thermal evaporation Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000002105 nanoparticle Substances 0.000 description 7
- 229910017604 nitric acid Inorganic materials 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 235000019628 coolness Nutrition 0.000 description 5
- 238000002242 deionisation method Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 150000002823 nitrates Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229920002620 polyvinyl fluoride Polymers 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a kind of monocrystalline silicon piece with suede structure and preparation method thereof and silicon solar cell.The surface of monocrystalline silicon piece of the present invention is the matte that some pyramid structures are distributed with that etched processing is formed, and nano-pore structure is distributed with the matte of the pyramid structure.Monocrystalline silicon piece texture structure specific surface area of the present invention is big, and nano-pore is uniform, and it has the angle of more preferably reflected sunlight, so that with lower light reflectivity, the utilization rate to sunshine is high.Its preparation method is reproducible, process stabilizing, and the monocrystalline silicon piece texture structure of preparation is to this stability of characteristics of the antiradar reflectivity of sunshine, and operation is easy, and cost is low, and obtained nano-pore is uniform, so as to ensure that the higher reflection preventing ability of structure.Silicon solar cell of the present invention is high to the utilization rate of sunshine, so that the short-circuit current density and photoelectric transformation efficiency of silicon solar cell of the present invention are high.
Description
Technical field
The invention belongs to technical field of solar batteries, relate particularly to it is a kind of have suede structure monocrystalline silicon piece and its
Preparation method and silicon solar cell.
Background technology
With the fast development of social economy, the quick consumption of the fossil fuel such as oil, natural gas so that the energy in the world
Demand supplies growing tension, seriously governs the sustainable development of various countries.Simultaneously as the excessive exploitation of fossil fuel use and
The intense industrialization of society, the environmental problem such as greenhouse effects and haze is increasingly severe, and the production and living of people are also by serious
Influence.
In order to solve this problem, the new energy such as development and utilization solar energy, wind energy becomes everybody common selection.Its
In, solar energy is as most environmentally friendly, cleaning, free of contamination green energy resource, and reserves are huge, it is considered to be most there is development potentiality 21 century
Regenerative resource.
Solar cell is mainly converted solar energy into electrical energy by photovoltaic effect, is to utilize the maximally efficient side of solar energy
One of formula.In solar cell in the market, silica-based solar cell is to be most widely used, and technology development is also the most
Ripe, although it has higher photoelectric transformation efficiency and stability, but in preparation technology, still suffers from power consumption and pollute many,
It is with high costs, the problems such as photoelectric transformation efficiency is expected to further improve, therefore limit the production of its large-scale commercial.
So, for solar cell, improve the photoelectric transformation efficiency of solar cell and reduce cost and be always
Its emphasis studied, and it is to improve solar cell light to the reflection of incident light and the absorption of increase incident light to reduce battery surface
The important means of photoelectric transformation efficiency.Traditional antireflective measure mainly has two kinds：One kind is to prepare one layer in surface of silicon to subtract
Anti- film, such as TiOx, SiNx antireflective film, to increase the absorbability of light；It is another, it is in surface of silicon structure with etching method
Some silicon micro-nano structures are made, using the multiple reflections of light, increase the path of light absorbs, light ability is fallen into improve it.The former is general
The equipment of complexity is needed, cumbersome prepares cost high.And the latter can be carried out at normal temperatures, equipment is simple, easy to operate,
It is with low cost, and the silicon chip of etching has preferable anti-reflective effect, it is adaptable to industrialized production.
At present, in the matte preparation technology of solar cell, traditional method mainly uses the mixing of alkali and alcohol molten
Liquid carries out anisotropic etch to monocrystalline silicon crystal face, in the matte of silicon chip surface formation " pyramid " shape.This suede structure, with
Planar silicon is compared, and improves the specific surface area of silicon chip surface, significantly reduces the reflectivity of light, so as to enhance the suction to light
Receipts ability.But the reflectivity of " pyramid " structure prepared by this method at present is still very high, average reflectance exists
More than 10%.Therefore, the reflectivity for how reducing silicon chip is the technical barrier for needing to capture.
The content of the invention
It is an object of the invention to the above-mentioned deficiency for overcoming prior art, there is provided a kind of monocrystalline silicon piece with suede structure
And preparation method thereof, to solve the technical problem that reflectivity of the existing monocrystalline silicon piece texture to sunshine is high.
Another object of the present invention is to provide a kind of silicon solar cell, to solve existing silicon solar cell due to right
The reflectivity of sunshine is high, and causes the utilization rate to sunshine low, while the conversion efficiency of short-circuit current density and battery is low
Technical problem.
In order to realize foregoing invention purpose, there is provided a kind of preparation of monocrystalline silicon piece texture structure for an aspect of of the present present invention
Method.The preparation method comprises the following steps：
Monocrystalline silicon piece is carried out after surface cleaning processing, is placed in the first etching liquid and performs etching processing, make the monocrystalline
The matte of some pyramid structures is distributed with silicon chip surface formation；
By the monocrystalline silicon piece for being etched with the matte after acid solution cleaning treatment, hydrogenated using hydrofluoric acid solution
Processing；
Again by silver coating on the matte of the monocrystalline silicon piece after hydrogenated processing；
The monocrystalline silicon piece for being coated with the silver layer is made annealing treatment in protective atmosphere so that silver layer forms non-company
Continuous silver nano-grain, and the silver nano-grain distribution and with reference on the matte；
The monocrystalline silicon piece after annealed processing is placed in the second etching liquid and performs etching processing, on the matte
Nano-pore structure is formed, silver nano-grain is then removed.
There is provided a kind of monocrystalline silicon piece for another aspect of the present invention.The surface of the monocrystalline silicon piece is etched processing shape
Into the matte that some pyramid structures are distributed with, and nano-pore structure is distributed with the matte of the pyramid structure.
There is provided a kind of silicon solar cell for another aspect of the present invention.The silicon solar cell includes and is passivated place
N-type monocrystalline silicon piece after reason, the n-type monocrystalline silicon piece is monocrystalline silicon piece or be monocrystalline of the present invention prepared by preparation method of the present invention
Silicon chip, PEDOT is coated with the pyramid structure matte for offering nano-pore structure of the monocrystalline silicon piece:PSS layer, in institute
State PEDOT:PSS layer outer surface is combined with anode layer；PEDOT is coated with the n-type monocrystalline silicon piece:Matte described in PSS layer
Back to surface on be combined with negative electrode layer.
Compared with prior art, the preparation method of monocrystalline silicon piece texture structure of the present invention enables to monocrystalline silicon piece formation
Matte has bigger specific surface area, and with the angle of more preferably reflected sunlight, lower light reflectivity, so as to strengthen
Utilization rate of the silicon chip surface to sunshine.In addition, preparation method of the present invention is reproducible, process stabilizing, the monocrystalline silicon of preparation
Piece suede structure is to this stability of characteristics of the antiradar reflectivity of sunshine, and operation is easy, and cost is low, and obtained nano-pore is equal
It is even, so as to ensure that the higher reflection preventing ability of structure.
Monocrystalline silicon piece of the present invention is additionally provided with nano-pore structure being distributed with the matte of some pyramid structures, the structure
Matte specific surface area is big, and nano-pore is uniform, and it has the angle of more preferably reflected sunlight, so as to be reflected with lower light
Rate, the utilization rate to sunshine is high.
Silicon solar cell of the present invention is because containing monocrystalline silicon piece of the present invention, therefore, silicon solar cell of the present invention is to too
The utilization rate of sunlight is high, so that the short-circuit current density and photoelectric transformation efficiency of silicon solar cell of the present invention are high.
Brief description of the drawings
Fig. 1 is monocrystalline silicon piece texture of embodiment of the present invention SEM figures；
Fig. 2 is the preparation method flow chart of monocrystalline silicon piece texture structure of the embodiment of the present invention；
Fig. 3 is that present invention implementation monocrystalline silicon piece etches the matte SEM figures to form some pyramid structures；
Fig. 4 is that the present invention implements monocrystalline silicon piece and etches and be coated with discontinuous silver nanoparticle on the matte to form some pyramid structures
The SEM figures of particle；
Fig. 5 is the compound suede structure monocrystalline silicon piece of silicon pyramid-nano-pore and the biography provided in comparative example 1 in embodiment 11
The sunshine reflectivity comparison diagram of the monocrystalline silicon piece of system pyramid structure matte；
Fig. 6 is the J-V curves for the silicon solar cell that the silicon solar cell that embodiment 21 is provided is provided with comparative example 1
Figure；
Fig. 7 is that the outer quantum for the silicon solar cell that the silicon solar cell that embodiment 21 is provided is provided with comparative example 1 is imitated
Rate figure.
Embodiment
In order that technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment and accompanying drawing, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
On the one hand, the embodiments of the invention provide a kind of monocrystalline silicon piece low to sun light reflectivity.The monocrystalline silicon piece
Surface is the matte that some pyramid structures are distributed with that etched processing is formed, and on the matte of the pyramid structure
Nano-pore structure is distributed with, its suede structure is as shown in Figure 1.So, some pyramid structures are being distributed with the monocrystalline silicon piece
Matte on be additionally provided with nano-pore structure so that the matte specific surface area of the structure is big, nano-pore is uniform, and it has more preferably
Reflected sunlight angle so that with lower light reflectivity, the utilization rate to sunshine is high.
Wherein, in one embodiment, the size of the pyramid structure is 1-8 μm.By to pyramid structure size
Control so that suede structure has big specific surface area, while there is certain size, to cause suede structure to have more preferably
The angle of reflected sunlight, so that with lower sun light reflectivity.In addition, the matte of the pyramid structure can be according to
Conventional technique is prepared, and the preparation method for being specifically referred to hereafter monocrystalline silicon piece prepares the matte of pyramid structure.
The base of nano-pore structure, effectively increase matte specific surface area is further etched on the matte of above-mentioned pyramid structure
On plinth, nano-pore structure and the combined reflection angle for further improving matte to sunshine of pyramid structure, so as to enter one
Reflectivity of the step reduction matte to sunshine.
Therefore, above-mentioned monocrystalline silicon piece is by etching the pyramid structure of formation and the common work of nano-pore structure on matte
With so that above-mentioned monocrystalline silicon piece texture has larger specific surface area.Further by pyramid structure and nano-pore structure
Size particularly nano-pore structure size Control so that the suede structure has the angle of more preferably reflected sunlight, from
And with lower sun light reflectivity.
Correspondingly, the embodiment of the present invention additionally provides a kind of preparation method on monocrystalline silicon piece described above.The preparation
Method flow specifically includes following steps as shown in Fig. 2 refer to monocrystalline silicon piece texture structure chart 1, Fig. 3 and Fig. 4 simultaneously：
S01. monocrystalline silicon sheet surface is etched to form the matte that pyramid structure is distributed with：Monocrystalline silicon piece is subjected to surface clear
Wash after processing, be placed in the first etching liquid and perform etching processing, make the monocrystalline silicon sheet surface formation that some pyramids are distributed with
The matte of structure；
S02. hydrogenation treatment is carried out to matte：There is the monocrystalline silicon piece of the matte through acid by what is prepared in step S01
After liquid cleaning treatment, hydrogenation treatment is carried out using hydrofluoric acid solution；
S03. in matte silver coating：By on the matte of the monocrystalline silicon piece after hydrogenated processing in step S02
Silver coating；
S04. silver layer is made annealing treatment：The monocrystalline silicon piece of the silver layer will be coated with step S03 in protection gas
Made annealing treatment in atmosphere so that silver layer forms discrete silver nano-grain, and the silver nano-grain is distributed and combined
On the matte；
S05. secondarily etched processing is carried out to matte and forms nano-pore structure：By the institute after annealed processing in step S04
State monocrystalline silicon piece and be placed in the second etching liquid and perform etching processing, nano-pore structure is formed on the matte, then remove silver
Nano particle.
Specifically, above-mentioned steps S01 monocrystalline silicon pieces can be the conventional monocrystalline silicon piece of silicon solar cell, and such as resistivity is
1.5~2.6 Ω .cm n type single crystal silicon piece, and it is cut into the n type single crystal silicon piece of 2x2cm sizes.To the monocrystalline silicon piece table
The cleaning treatment purpose in face is in order to remove the impurity of monocrystalline silicon sheet surface, so as to follow-up etching processing.Therefore, as long as energy
Enough all cleaning methods for effectively removing monocrystalline silicon sheet surface impurity are in disclosure of the invention scope, such as in one embodiment,
The cleaning treatment is the monocrystalline silicon piece that will be cut each ultrasound successively under normal temperature in acetone, absolute ethyl alcohol, deionized water
15min, is then fully rinsed with deionized water again, then standby with nitrogen drying.
The first etching liquid in step S01 is to etch the suede of some pyramid structures in monocrystalline silicon sheet surface
Face, the matte SEM figures that etching forms some pyramid structures are as shown in Figure 3.Therefore, in one embodiment, first etching
The isopropanol that the sodium hydroxide and volume fraction that liquid is 2%-3% containing mass fraction are 5%-8%.In a particular embodiment, it is molten
Matter can be only sodium hydroxide and isopropanol, and solvent can be the solvent used in conventional etching liquid.In first etching liquid
On the basis of, in another embodiment, the temperature of etching processing of first etching liquid is used for 75 DEG C~85 DEG C, such as 80
DEG C, the time is 25~40min, such as 30min.By the control of the composition species and content to the first etching liquid, while to etching
The control of the etching conditions such as temperature and time so that monocrystalline silicon sheet surface is etched the suede to be formed and some pyramid structures are distributed with
Face.As in a particular embodiment, the bottom interface size of the pyramid structure is 1-8 μm.By to the first etching liquid into
Divide the control of species and content, while the control to etching conditions such as etching temperature and times, is such as set as 80 by etching temperature
DEG C, etch period is 30min, and the parameters such as pyramid structure size can be controlled indirectly so that monocrystalline silicon piece texture has
There are big specific surface area and specific reflection angular, so as to reduce the reflectivity to sunshine.
In above-mentioned steps S02, can be but not exclusively using at watery hydrochloric acid using acid solution cleaning treatment by monocrystalline silicon piece
Reason, to remove the first etching liquid remained in above-mentioned steps S01.Wherein, the concentration of dilute hydrochloric acid solution can be conventional dilute salt
Acid solutions, such as mass fraction are less than 20% hydrochloric acid.In one embodiment, the time of watery hydrochloric acid processing monocrystalline silicon piece is
20min, such as can be with ultrasonically treated.
After after watery hydrochloric acid processing, the hydrogenation treatment that hydrofluoric acid solution is particularly its matte to monocrystalline silicon piece is for removal silicon table
The SiO in face2Layer.Wherein, in an embodiment, the concentration of hydrofluoric acid solution can be 3-8wt%, such as 5wt%.In one embodiment,
The time of the hydrofluoric acid solution hydrogenation treatment monocrystalline silicon piece of the concentration is 3-10min, such as 5min.
It is to be hydrogenated be disposed after, can further use and be cleaned such as deionized water, removing monocrystalline silicon sheet surface is residual
The hydrofluoric acid solution stayed.Dried up afterwards with nitrogen standby.
In above-mentioned steps S03, it can such as be steamed in the method for matte silver coating using conventional method using vacuum thermal evaporation
Plating, naturally it is also possible to silver-plated using other method.In one embodiment, the thickness of institute's silver coating is 15~30nm.By to silver
The control of thickness degree, to realize the control to the particle diameter of silver nano-grain in above-mentioned steps S04, so as to finally control above-mentioned steps
Nano-pore structure distribution and the size of formation are etched in S05.
In above-mentioned steps S04, silver layer is in protective atmosphere in annealing process, due to silver layer melted by heating, so that shape
Into some discrete silver nano-grains, and combine on matte, such as combine on the matte of pyramid structure, it is coated with non-company
The SEM figures of the matte of continuous silver nano-grain are as shown in Figure 4.In one embodiment, it is described annealing be temperature be 350
DEG C of -400 DEG C heat treatment times are to cool down after 15~30min.After measured, the grain of the silver nano-grain formed after annealing
Footpath is 100-400nm.In addition, stability of the protective atmosphere protection silver in annealing, such as not oxidized, therefore, in an embodiment
In, the protective atmosphere is but is not limited to nitrogen atmosphere.
In above-mentioned steps S05, surface respectively and is combined with the monocrystalline silicon piece of discrete silver nano-grain in the second etching
Performed etching in liquid in processing procedure, silver nano-grain plays catalytic action, using metal ion Assisted Chemical Etching Process method to carve
Lose nano-pore structure.In one embodiment, ferric nitrate of second etching liquid comprising 0.05M/L and 4.8M/L hydrogen fluorine
Acid, and the time of the etching processing of second etching liquid is 0.5-10min, the temperature of etching can be normal temperature.After measured, carve
The aperture for losing the nano-pore formed is 50-400nm, and depth is 100-700nm.By the composition to the second etching liquid and contain
Amount and the control to etching condition so that the nano-pore that etching is formed has certain size, so that one side nano-pore knot
Structure can play synergy with pyramid structure so that above-mentioned monocrystalline silicon piece texture has big specific surface area；On the other hand,
So that the suede structure has the angle of more preferably reflected sunlight, with lower sun light reflectivity.
After being finished through the second etching liquid etching, matte is etched with to the Nano Silver on the monocrystalline silicon piece of nano-pore structure
Grain is removed, so as to obtain the monocrystalline silicon piece of suede structure as described in Figure 1.In one embodiment, nano-Ag particles are removed
Method is：The monocrystalline silicon piece for being etched with nano-pore structure is put into dust technology and carries out immersion treatment to remove nano-Ag particles.
Such as ultrasound 30min, then soak 2h, is rinsed well with deionized water, is finally dried up with nitrogen again after taking-up.
Therefore, the preparation method of above-mentioned monocrystalline silicon piece texture structure enables to the matte of monocrystalline silicon piece formation with bigger
Specific surface area, and the angle with more preferably reflected sunlight, so that with lower light reflectivity, so as to enhance silicon
Utilization rate of the piece surface to sunshine.In addition, above-mentioned preparation method is reproducible, process stabilizing, the monocrystalline silicon piece texture of preparation
Structure is to this stability of characteristics of the antiradar reflectivity of sunshine, and operation is easy, and cost is low, and obtained nano-pore is uniform, so that
It ensure that the higher reflection preventing ability of structure.
Another further aspect, on the basis of there is suede structure monocrystalline silicon piece and preparation method thereof above, the embodiment of the present invention
Additionally provide a kind of silicon solar cell.The silicon solar cell includes the n-type monocrystalline silicon piece after being passivated, the n
Type monocrystalline silicon piece is monocrystalline silicon piece by method preparation is prepared as above or is monocrystalline silicon piece above, in opening up for the monocrystalline silicon piece
Have and be coated with PEDOT on the pyramid structure matte of nano-pore structure:PSS layer, in the PEDOT:PSS layer outer surface is combined with
Anode layer；PEDOT is coated with the n-type monocrystalline silicon piece:Matte described in PSS layer back to surface on be combined with negative pole
Layer.
Wherein, n-type monocrystalline silicon piece is passivated method and can be but be put into 5% not just for by the silicon chip of the structure
Hydrogenated in HF solution after 5min, then use HNO3Silicon chip is passivated, last deionized water rinsing is several to be dried up after with nitrogen.Wherein, HNO3
Concentration is 5%~20%, and passivation time is 1~10s.
In one embodiment, above-mentioned PEDOT:The thickness of PSS layer is 20-200nm.In another embodiment, PEDOT:PSS
TritonX-100 containing 5% DMSO and 1% in layer.The PEDOT:PSS layer preparation method can with but not just for：Will
PEDOT:PSS solution uses sol evenning machine spin coating, then silicon chip is transferred in glove box with 140 DEG C of annealing 15min；Wherein, spin coating
Speed be 1500-3000 revs/min, the time is but not just for 1min.
Above-mentioned anode layer can be the conventional anode layer of silicon solar cell, such as silver-colored gate electrode, and the positive pole can be using normal
The generation type of rule is formed at PEDOT:On outside PSS layer.In one embodiment, the anode layer such as thickness of silver-colored gate electrode is
100-300nm。
Above-mentioned negative electrode layer can be the conventional negative electrode layer of silicon solar cell, and such as aluminium electrode, the negative pole can be using conventional
Generation type be formed at and be coated with PEDOT in the n-type monocrystalline silicon piece:Matte described in PSS layer back to surface on,
Namely be formed on the back side that n-type monocrystalline silicon piece industry is commonly called as.In one embodiment, the thickness of the negative electrode layer such as aluminium electrode is
100-300nm。
Because above-mentioned silicon solar cell contains monocrystalline silicon piece of the present invention, therefore, above-mentioned silicon solar cell is to sunshine
Utilization rate it is high so that the short-circuit current density and photoelectric transformation efficiency of above-mentioned silicon solar cell are high.
In conjunction with instantiation, there is suede structure monocrystalline silicon piece and preparation method thereof to enter traveling one to the embodiment of the present invention
Step is described in detail.
1. with suede structure monocrystalline silicon piece embodiment
Embodiment 11
The present invention provides a kind of with suede structure monocrystalline silicon piece and preparation method thereof.
It is prepared as follows with suede structure monocrystalline silicon piece：
S11. the sodium hydroxide and volume fraction for being 2.5% with mass fraction are that 5% isopropanol has configured etching solution, so
Cleaned 2x2cm monocrystalline silicon pieces are immersed in etching solution by a polyvinyl fluoride fixture afterwards, pass through 80 DEG C of water-bath
Heat after 30min, just can etch the suede structure of " pyramid "；
S12. again by the monocrystalline silicon piece of step S11 etching processings in watery hydrochloric acid ultrasound 20min, deionized water rinsing 3 times
The sodium hydroxide and hydrochloric acid of remained on surface are removed, then silicon chip is put into 5% hydrofluoric acid and hydrogenates the oxidation that 5min removes surface
Silicon, is finally dried up with nitrogen again with deionized water rinsing；
S13. one layer of 30nm silver is deposited using monocrystalline silicon sheet surface of the vacuum thermal evaporation equipment after step S12 hydrogenations
Layer；
S14. and then the silver-plated monocrystalline silicon pieces of step S13 are transferred in the glove box with nitrogen atmosphere, added at 400 DEG C
Hot 20min, after annealing cooling, one layer of particle diameter discrete silver nanoparticle between 200~400nm is formed on the surface of silicon chip
Grain；
S15. the monocrystalline silicon piece after step S14 annealing coolings is put into 4.8M/L hydrofluoric acid and 0.05M/L ferric nitrates again
Mixed solution in react 1min, nano-pore knot is prepared in the structure of " pyramid " using metal ion Assisted Chemical Etching Process method
Structure, is then put into ultrasound 30min in dust technology by monocrystalline silicon piece, then soaks 2h, is rinsed well again with deionized water after taking-up
Dried up with nitrogen, you can obtain silicon pyramid-nano-pore and be combined suede structure monocrystalline silicon piece.
The monocrystalline silicon piece of the suede structures for being etched with " pyramid " prepared of step S11 in embodiment 11 is subjected to SEM sights
Examine, the SEM figures of its suede structure are as shown in figure 3, its surface distributed has the similar pyramid of many uniform, sizes.
The monocrystalline silicon pieces for being combined with discrete silver nano-grain prepared of step S14 in embodiment 11 are subjected to SEM sights
Examine, it is combined with the SEM figures of discrete silver nano-grain suede structure as shown in figure 4, forming one layer in pyramid structure
Discrete silver nano-grain.
Monocrystalline silicon piece after step S15 processing in embodiment 11 is subjected to SEM observations, silicon pyramid-nano-pore combination fine hair
The suede structure of face structure monocrystalline silicon piece is as shown in figure 1, this suede structure is to etch nano-pore in pyramid structure to be formed
, with bigger specific surface area.
Embodiment 12
The present invention provides a kind of with suede structure monocrystalline silicon piece and preparation method thereof.
It is prepared as follows with suede structure monocrystalline silicon piece：
S21. the sodium hydroxide and volume fraction for being 2.5% with mass fraction are that 5% isopropanol has configured etching solution, so
Cleaned 2x2cm monocrystalline silicon pieces are immersed in etching solution by a polyvinyl fluoride fixture afterwards, pass through 80 DEG C of water-bath
Heat after 30min, just can etch the suede structure of " pyramid "；
S22. again by the monocrystalline silicon piece of step S21 etching processings in watery hydrochloric acid ultrasound 20min, deionized water rinsing 3 times
The sodium hydroxide and hydrochloric acid of remained on surface are removed, then silicon chip is put into 5% hydrofluoric acid and hydrogenates the oxidation that 5min removes surface
Silicon, is finally dried up with nitrogen again with deionized water rinsing；
S23. one layer of 30nm silver is deposited using monocrystalline silicon sheet surface of the vacuum thermal evaporation equipment after step S22 hydrogenations
Layer；
S24. and then the silver-plated monocrystalline silicon pieces of step S23 are transferred in the glove box with nitrogen atmosphere, added at 400 DEG C
Hot 20min, after annealing cooling, one layer of particle diameter discrete silver nanoparticle between 200~400nm is formed on the surface of silicon chip
Grain；
S25. the monocrystalline silicon piece after step S24 annealing coolings is put into 4.8M/L hydrofluoric acid and 0.05M/L ferric nitrates again
Mixed solution in react 3min, nano-pore knot is prepared in the structure of " pyramid " using metal ion Assisted Chemical Etching Process method
Structure, is then put into ultrasound 30min in dust technology by monocrystalline silicon piece, then soaks 2h, is rinsed well again with deionized water after taking-up
Dried up with nitrogen, you can obtain silicon pyramid-nano-pore and be combined suede structure monocrystalline silicon piece.
Embodiment 13
The present invention provides a kind of with suede structure monocrystalline silicon piece and preparation method thereof.
It is prepared as follows with suede structure monocrystalline silicon piece：
S31. the sodium hydroxide and volume fraction for being 2.5% with mass fraction are that 5% isopropanol has configured etching solution, so
Cleaned 2x2cm monocrystalline silicon pieces are immersed in etching solution by a polyvinyl fluoride fixture afterwards, pass through 80 DEG C of water-bath
Heat after 30min, just can etch the suede structure of " pyramid "；
S32. again by the monocrystalline silicon piece of step S31 etching processings in watery hydrochloric acid ultrasound 20min, deionized water rinsing 3 times
The sodium hydroxide and hydrochloric acid of remained on surface are removed, then silicon chip is put into 5% hydrofluoric acid and hydrogenates the oxidation that 5min removes surface
Silicon, is finally dried up with nitrogen again with deionized water rinsing；
S33. one layer of 30nm silver is deposited using monocrystalline silicon sheet surface of the vacuum thermal evaporation equipment after step S32 hydrogenations
Layer；
S34. and then the silver-plated monocrystalline silicon pieces of step S33 are transferred in the glove box with nitrogen atmosphere, added at 400 DEG C
Hot 20min, after annealing cooling, one layer of particle diameter discrete silver nanoparticle between 200~400nm is formed on the surface of silicon chip
Grain；
S35. the monocrystalline silicon piece after step S34 annealing coolings is put into 4.8M/L hydrofluoric acid and 0.05M/L ferric nitrates again
Mixed solution in react 5min, nano-pore knot is prepared in the structure of " pyramid " using metal ion Assisted Chemical Etching Process method
Structure, is then put into ultrasound 30min in dust technology by monocrystalline silicon piece, then soaks 2h, is rinsed well again with deionized water after taking-up
Dried up with nitrogen, you can obtain silicon pyramid-nano-pore and be combined suede structure monocrystalline silicon piece.
Embodiment 14
The present invention provides a kind of with suede structure monocrystalline silicon piece and preparation method thereof.
It is prepared as follows with suede structure monocrystalline silicon piece：
S41. the sodium hydroxide and volume fraction for being 2.5% with mass fraction are that 5% isopropanol has configured etching solution, so
Cleaned 2x2cm monocrystalline silicon pieces are immersed in etching solution by a polyvinyl fluoride fixture afterwards, pass through 80 DEG C of water-bath
Heat after 30min, just can etch the suede structure of " pyramid "；
S42. again by the monocrystalline silicon piece of step S41 etching processings in watery hydrochloric acid ultrasound 20min, deionized water rinsing 3 times
The sodium hydroxide and hydrochloric acid of remained on surface are removed, then silicon chip is put into 5% hydrofluoric acid and hydrogenates the oxidation that 5min removes surface
Silicon, is finally dried up with nitrogen again with deionized water rinsing；
S43. one layer of 30nm silver is deposited using monocrystalline silicon sheet surface of the vacuum thermal evaporation equipment after step S42 hydrogenations
Layer；
S44. and then the silver-plated monocrystalline silicon pieces of step S43 are transferred in the glove box with nitrogen atmosphere, added at 400 DEG C
Hot 20min, after annealing cooling, one layer of particle diameter discrete silver nanoparticle between 200~400nm is formed on the surface of silicon chip
Grain；
S45. the monocrystalline silicon piece after step S44 annealing coolings is put into 4.8M/L hydrofluoric acid and 0.05M/L ferric nitrates again
Mixed solution in react 7min, nano-pore knot is prepared in the structure of " pyramid " using metal ion Assisted Chemical Etching Process method
Structure, is then put into ultrasound 30min in dust technology by monocrystalline silicon piece, then soaks 2h, is rinsed well again with deionized water after taking-up
Dried up with nitrogen, you can obtain silicon pyramid-nano-pore and be combined suede structure monocrystalline silicon piece.
Embodiment 15
The present invention provides a kind of with suede structure monocrystalline silicon piece and preparation method thereof.
It is prepared as follows with suede structure monocrystalline silicon piece：
S51. the sodium hydroxide and volume fraction for being 2.5% with mass fraction are that 5% isopropanol has configured etching solution, so
Cleaned 2x2cm monocrystalline silicon pieces are immersed in etching solution by a polyvinyl fluoride fixture afterwards, pass through 80 DEG C of water-bath
Heat after 30min, just can etch the suede structure of " pyramid "；
S52. again by the monocrystalline silicon piece of step S51 etching processings in watery hydrochloric acid ultrasound 20min, deionized water rinsing 3 times
The sodium hydroxide and hydrochloric acid of remained on surface are removed, then silicon chip is put into 5% hydrofluoric acid and hydrogenates the oxidation that 5min removes surface
Silicon, is finally dried up with nitrogen again with deionized water rinsing；
S53. one layer of 30nm silver is deposited using monocrystalline silicon sheet surface of the vacuum thermal evaporation equipment after step S52 hydrogenations
Layer；
S54. and then the silver-plated monocrystalline silicon pieces of step S53 are transferred in the glove box with nitrogen atmosphere, added at 400 DEG C
Hot 20min, after annealing cooling, one layer of particle diameter discrete silver nanoparticle between 200~400nm is formed on the surface of silicon chip
Grain；
S55. the monocrystalline silicon piece after step S54 annealing coolings is put into 4.8M/L hydrofluoric acid and 0.05M/L ferric nitrates again
Mixed solution in react 10min, prepare nano-pore in the structure of " pyramid " using metal ion Assisted Chemical Etching Process method
Structure, is then put into ultrasound 30min in dust technology by silicon chip, then soaks 2h, is rinsed well and is used again with deionized water after taking-up
Nitrogen is dried up, you can is obtained silicon pyramid-nano-pore and is combined suede structure monocrystalline silicon piece.
2. silicon solar cell embodiment
Embodiment 21
Present embodiments provide a kind of silicon solar cell, it include above-described embodiment 11 offer have suede structure list
Crystal silicon chip, PEDOT is sequentially laminated with the monocrystalline silicon piece front:PSS layer and silver-colored gate electrode, in monocrystalline silicon piece back side knot
Conjunction has aluminium electrode.
The present embodiment silicon solar cell is prepared as follows：
The monocrystalline silicon piece of above-described embodiment 11 is put into 5%HF and hydrogenates 5min, in 10%HNO3Middle passivation 3s, uses deionization
Water is dried up after rinsing several times with nitrogen；Then in monocrystalline silicon piece front with 2000 revs/min of spin coatings, one layer of PEDOT:PSS films,
Spin-coating time is 1min, is then transferred into 140 DEG C of annealing 15min in glove box, then pass through mask plate with vacuum thermal evaporation methods
In front one layer of 200nm of evaporation of silicon chip silver-colored gate electrode, one layer of 200nm aluminium electrode is deposited at the monocrystalline silicon piece back side, so
Just obtain silicon/PEDOT based on the structure:PSS hybrid solar cells.
Embodiment 22
Present embodiments provide a kind of silicon solar cell, it include above-described embodiment 12 offer have suede structure list
Crystal silicon chip, PEDOT is sequentially laminated with the monocrystalline silicon piece front:PSS layer and silver-colored gate electrode, in monocrystalline silicon piece back side knot
Conjunction has aluminium electrode.
The present embodiment silicon solar cell is prepared as follows：
The monocrystalline silicon piece of above-described embodiment 12 is put into 5%HF and hydrogenates 5min, in 10%HNO3Middle passivation 3s, uses deionization
Water is dried up after rinsing several times with nitrogen；Then in front side of silicon wafer with 2000 revs/min of spin coatings, one layer of PEDOT:PSS films, spin coating
Time is 1min, is then transferred into glove box 140 DEG C of annealing 15min, then with vacuum thermal evaporation methods by mask plate in silicon
Front one layer of 200nm of evaporation of piece silver-colored gate electrode, is deposited one layer of 200nm aluminium electrode in silicon chip back side, thus obtains base
In silicon/PEDOT of the structure:PSS hybrid solar cells.
Embodiment 23
Present embodiments provide a kind of silicon solar cell, it include above-described embodiment 13 offer have suede structure list
Crystal silicon chip, PEDOT is sequentially laminated with the monocrystalline silicon piece front:PSS layer and silver-colored gate electrode, in monocrystalline silicon piece back side knot
Conjunction has aluminium electrode.
The present embodiment silicon solar cell is prepared as follows：
The monocrystalline silicon piece of above-described embodiment 13 is put into 5%HF and hydrogenates 5min, in 10%HNO3Middle passivation 3s, uses deionization
Water is dried up after rinsing several times with nitrogen.Then in front side of silicon wafer with 2000 revs/min of spin coatings, one layer of PEDOT:PSS films, spin coating
Time is 1min, is then transferred into glove box 140 DEG C of annealing 15min, then with vacuum thermal evaporation methods by mask plate in silicon
Front one layer of 200nm of evaporation of piece silver-colored gate electrode, is deposited one layer of 200nm aluminium electrode in silicon chip back side, thus obtains base
In silicon/PEDOT of the structure:PSS hybrid solar cells.
Embodiment 24
Present embodiments provide a kind of silicon solar cell, it include above-described embodiment 14 offer have suede structure list
Crystal silicon chip, PEDOT is sequentially laminated with the monocrystalline silicon piece front:PSS layer and silver-colored gate electrode, in monocrystalline silicon piece back side knot
Conjunction has aluminium electrode.
The present embodiment silicon solar cell is prepared as follows：
The monocrystalline silicon piece of above-described embodiment 14 is put into 5%HF and hydrogenates 5min, in 10%HNO3Middle passivation 3s, uses deionization
Water is dried up after rinsing several times with nitrogen.Then in front side of silicon wafer with 2000 revs/min of spin coatings, one layer of PEDOT:PSS films, spin coating
Time is 1min, is then transferred into glove box 140 DEG C of annealing 15min, then with vacuum thermal evaporation methods by mask plate in silicon
Front one layer of 200nm of evaporation of piece silver-colored gate electrode, is deposited one layer of 200nm aluminium electrode in silicon chip back side, thus obtains base
In silicon/PEDOT of the structure:PSS hybrid solar cells.
Embodiment 25
Present embodiments provide a kind of silicon solar cell, it include above-described embodiment 15 offer have suede structure list
Crystal silicon chip, PEDOT is sequentially laminated with the monocrystalline silicon piece front:PSS layer and silver-colored gate electrode, in monocrystalline silicon piece back side knot
Conjunction has aluminium electrode.
The present embodiment silicon solar cell is prepared as follows：
The monocrystalline silicon piece of above-described embodiment 15 is put into 5%HF and hydrogenates 5min, in 10%HNO3Middle passivation 3s, uses deionization
Water is dried up after rinsing several times with nitrogen.Then in front side of silicon wafer with 2000 revs/min of spin coatings, one layer of PEDOT:PSS films, spin coating
Time is 1min, is then transferred into glove box 140 DEG C of annealing 15min, then with vacuum thermal evaporation methods by mask plate in silicon
Front one layer of 200nm of evaporation of piece silver-colored gate electrode, is deposited one layer of 200nm aluminium electrode in silicon chip back side, thus obtains base
In silicon/PEDOT of the structure:PSS hybrid solar cells.
Comparative example 1
The monocrystalline silicon piece of traditional pyramid structure matte is provided, and with reference to embodiment 21 mode in traditional pyramid structure
The monocrystalline silicon piece front of matte is sequentially laminated with PEDOT:PSS layer and silver-colored gate electrode, aluminium is combined with the monocrystalline silicon piece back side
Electrode.
Correlated performance is tested：
Silicon pyramid-nano-pore that above-described embodiment 11-15 is provided is combined in suede structure monocrystalline silicon piece and comparative example 1
The monocrystalline silicon piece of traditional pyramid structure matte of offer does sun light reflectivity check experiment.Wherein, silicon gold in embodiment 11
Word tower-nano-pore is combined suede structure monocrystalline silicon piece and the monocrystalline silicon piece of the traditional pyramid structure matte provided in comparative example 1
Light reflectivity it is as shown in Figure 5.As shown in Figure 5, silicon pyramid-nano-pore that embodiment 11 is provided is combined suede structure monocrystalline silicon
The light reflectivity of piece is significantly larger than the light reflectivity of the monocrystalline silicon piece of traditional pyramid structure matte of the offer of comparative example 1.
In addition, silicon pyramid-nano-pore that embodiment 12 to embodiment 15 is provided is combined the light of suede structure monocrystalline silicon piece
Reflectivity is more or less the same with embodiment 11, but the monocrystalline silicon piece of the traditional pyramid structure matte provided much smaller than comparative example 1
Light reflectivity.
The silicon solar cell that above-described embodiment 21-25 is provided is distinguished with the silicon solar cell provided in comparative example 1
Do J-V characteristic curves and the external quantum efficiency test of battery.Wherein, embodiment 21 is provided silicon solar cell and comparative example 1
The J-V curves of the silicon solar cell of offer are as shown in Figure 6.The silicon solar cell that embodiment 21 is provided is provided with comparative example 1
Silicon solar cell external quantum efficiency it is as shown in Figure 7.
It can be seen that with reference to Fig. 6 and the figures of Fig. 7 two：At ambient temperature, the silicon solar cell of the offer of embodiment 21 is short
Road electric current is 30.8mA/cm2, open-circuit voltage is 0.556V, and fill factor, curve factor is 0.64, and photoelectric transformation efficiency is 10.9%, outer amount
The electric current that sub- efficiency integration is obtained is 30.6mA/cm2.And the short circuit current flow for traditional silicon solar cell that comparative example 1 is provided is
28.4mA/cm2, open-circuit voltage is 0.546V, and fill factor, curve factor is 0.62, and photoelectric transformation efficiency is 9.6%, external quantum efficiency integration
Obtained electric current is 28.2mA/cm2.It can be drawn by these data, silicon solar cell efficiency that embodiment 21 is provided and outer
The relatively conventional silicon solar cell of quantum efficiency is all improved a lot.
And from comparative example 1 to embodiment 21-25, the short circuit current flow and efficiency of the silicon solar cell provided can first increase
After reduce, and the short circuit current flow and efficiency of silicon solar cell can reach most preferably in embodiment 21.
By this test result indicates that, silicon solar cell of the embodiment of the present invention is stronger to the utilization rate of sunshine, prepare
Silicon/PEDOT:More big advantage can be shown on PSS hybrid solar cells.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of preparation method of monocrystalline silicon piece texture structure, comprises the following steps：
Monocrystalline silicon piece is carried out after surface cleaning processing, is placed in the first etching liquid and performs etching processing, make the monocrystalline silicon piece
Surface forms the matte that some pyramid structures are distributed with；
By the monocrystalline silicon piece for being etched with the matte after acid solution cleaning treatment, carried out using hydrofluoric acid solution at hydrogenation
Reason；
Again by silver coating on the matte of the monocrystalline silicon piece after hydrogenated processing；
The monocrystalline silicon piece for being coated with the silver layer is made annealing treatment in protective atmosphere so that silver layer forms discrete
Silver nano-grain, and the silver nano-grain distribution and with reference on the matte；
The monocrystalline silicon piece after annealed processing is placed in the second etching liquid and performs etching processing, is formed on the matte
Nano-pore structure, then removes silver nano-grain.
2. preparation method according to claim 1, it is characterised in that：First etching liquid is 2%- comprising mass fraction
3% sodium hydroxide and volume fraction is 5%-8% isopropanol, and the temperature of the etching processing of first etching liquid is
75-85 DEG C, the time is 25~40min.
3. preparation method according to claim 1 or 2, it is characterised in that：The bottom section size of the pyramid structure
For 1-8 μm.
4. preparation method according to claim 1 or 2, it is characterised in that：Second etching liquid includes 0.05M/L nitre
The hydrofluoric acid of sour iron and 4.8M/L, and the time of the etching processing of second etching liquid is 0.5-10min.
5. preparation method according to claim 1, it is characterised in that：The thickness of the silver layer is 15~30nm；And/or
The particle diameter of the silver nano-grain is 100~400nm.
6. preparation method according to claim 1 or 5, it is characterised in that：It is described annealing be temperature be 350 DEG C-
400 DEG C of heat treatment times are cooling after 15~30min；And/or
The protective atmosphere is nitrogen atmosphere.
7. a kind of monocrystalline silicon piece, it is characterised in that：The surface of the monocrystalline silicon piece is that being distributed with for etched processing formation is some
The matte of pyramid structure, and nano-pore structure is distributed with the matte of the pyramid structure.
8. monocrystalline silicon piece according to claim 7, it is characterised in that：The bottom section size of the pyramid structure is 1-
8μm；And/or
The aperture of the nano-pore is 100-700nm, and depth is 50-400nm.
9. a kind of silicon solar cell, includes the n-type monocrystalline silicon piece after being passivated, it is characterised in that：The n-type monocrystalline silicon
Piece is the monocrystalline silicon piece prepared by any described preparation methods of claim 1-6 or is any described lists of claim 7-8
Crystal silicon chip, PEDOT is coated with the pyramid structure matte for offering nano-pore structure of the monocrystalline silicon piece:PSS layer,
The PEDOT:PSS layer outer surface is combined with anode layer；PEDOT is coated with the n-type monocrystalline silicon piece:Suede described in PSS layer
Face back to surface on be combined with negative electrode layer.
10. silicon solar cell according to claim 9, it is characterised in that：The PEDOT:The thickness of PSS layer is 20-
200nm；And/or
The thickness of above-mentioned anode layer is 100-300nm；And/or
The thickness of the negative electrode layer is 100-300nm.
Priority Applications (1)
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