CN111599877B - All-dielectric super-surface light trapping structure for solar cell and preparation method thereof - Google Patents
All-dielectric super-surface light trapping structure for solar cell and preparation method thereof Download PDFInfo
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- CN111599877B CN111599877B CN201910455847.1A CN201910455847A CN111599877B CN 111599877 B CN111599877 B CN 111599877B CN 201910455847 A CN201910455847 A CN 201910455847A CN 111599877 B CN111599877 B CN 111599877B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000000737 periodic effect Effects 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002116 nanohorn Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a periodic super-surface light trapping structure capable of improving the efficiency of a thin film silicon solar cell and a preparation method thereof. The whole structure is composed of periodic unit light trapping structures, and each unit comprises an asymmetric cross trapezoid at the center and nano squares at each corner. The super-surface light trapping structure provided by the invention is based on the optical waveguide theory and the Mie's resonance theory, has the advantages of large angular spectrum range and high spectral absorption, and is favorable for improving the light absorption efficiency of the thin film silicon cell.
Description
Technical Field
The invention relates to the field of novel clean energy and micro-nano photons, in particular to a periodic all-dielectric super-surface light trapping structure of a solar cell and a preparation method thereof.
Background
Currently, silicon is still the material of choice for photovoltaic products, with a market share of 90%. Commercial silicon solar cells are typically 170-180um thick and wafer production goes through multiple processes for purification and crystallization, with individual silicon wafers accounting for 30-40% of the module cost. Obviously, reducing the cost of materials can effectively reduce the price of the module, thus opening up a huge new market for solar cells, and so far, in order to further reduce the cost, the cell is developed to the second generation, namely, a thin film silicon solar cell.
The thin film silicon solar cell has the disadvantages of greatly reduced material absorption, large light loss and low cell conversion efficiency due to the reduced material thickness. The light trapping structure can effectively reduce light loss by increasing the optical path of incident light. The light trapping structure is formed by making special structures on the surface of the solar cell, so that the sunlight absorption rate is increased, and the thin film silicon solar cell can still realize high efficiency while reducing silicon materials.
Disclosure of Invention
Aiming at the technical background, the invention designs a coupled mie resonance-based super-surface light trapping structure which can enhance light absorption and can be prepared on a thin-film silicon solar cell in a large area.
The center of the structure is an asymmetric cross-trapezoid, which is used to excite Mie resonances in the visible and near infrared spectra. The distribution of the nano-squares in the four corners not only increases the Mie resonance but also improves the forward scattering, i.e. reduces the reflection.
According to the optical waveguide theory, the number of waveguide modes generated by coupling incident light under the symmetric condition is half of that under the asymmetric condition, so that the asymmetric super-surface light trapping structure can be coupled into more waveguide modes.
Because the period, the thickness, the length of the trapezoid, the side length of the nano block and the like of the super surface structure can be changed, a great optimization space is provided, and the light loss can be reduced to a greater extent.
The invention adopts the following technical scheme: a light trapping structure for a thin film solar cell is characterized in that the surface of the light trapping structure is provided with a periodic asymmetric super-surface structure.
The invention also provides a preparation method of the super-surface light trapping structure based on the coupled Mie resonance and the optical waveguide theory, which is characterized by comprising the following steps of: a process for manufacturing periodic super-surface structures on silicon using electron beam exposure in combination with dry etching methods.
Wherein the step of forming a mask on the Si substrate comprises: and spin-coating photoresist on a Si substrate, forming a periodic array structure on the resist layer by using electron beam lithography, and taking the etched resist coating as a mask.
The etching method includes but is not limited to reactive ion beam etching, and the method for removing the residual mask is ultrasonic cleaning in acetone.
The structure is arranged on the light-facing surface of the cell and is used for reducing the reflectivity of the surface light and increasing the optical path of light inside the solar cell, so that the short-circuit current density of the cell is increased.
Compared with the prior art, the invention has the following excellent properties.
The structure consists of a periodic asymmetric cross trapezoid and a nanometer square, improves forward scattering while exciting Mie resonance in near infrared and visible light wave bands, and has double functions of light trapping and antireflection.
And secondly, the period, the thickness, the length of the trapezoid, the side length of the cubic block and the like of the super-surface structure can be changed, so that a great optimization space is provided.
Drawings
Fig. 1 is a picture of the proposed cell structure of a super-surface.
Figure 2 is an absorption curve of a structure.
Fig. 3 is an angular spectrum plot of a structure.
Detailed Description
The invention is further described with reference to the accompanying drawings and the detailed description.
The light trapping structure of the coupled mie resonance super-surface is shown in fig. 1, and fig. 1 is a top view of a unit structure. The structure shown in fig. 1 is etched on a Si substrate, and a passivation film is deposited on the surface of the structure by PECVD. Such a structure includes an asymmetric cross-trapezoid at the center and a nanohorn at each corner. Due to the numerous structural parameters, more careful optimization is required.
In the optimization process, the thickness of the silicon substrate is 2 μm, and polarized light is normally incident from the structural plane. The optimized optimal structural parameters are as follows: the period P of the structure is 580nm, the height is 335nm, the side length T of the cubic block is 80nm, the length L of the trapezoid is 375nm, and the optimized corresponding parameters are marked in figure 1.
During the optimization process, it can be concluded that: the enhancement effect of the battery absorption rate is very obvious after adding four nano-blocks on the corners.
Fig. 2 is a graph of the absorption rate of three structures under the optimal period. From the results, it can be seen that the average absorption of the flat plate is 0.676, the average absorption of the pyramid is 0.929, and the average absorption of the super-surface is 0.951 in the entire visible light band of 400nm to 760nm, and the super-surface shows the optimal absorption performance.
Fig. 3 is a graph of the average enhancement factor of the pyramid and super-surface light trapping structure. The average enhancement factor refers to the ratio of the absorptance of a solar cell integrated with a light trapping structure to the absorptance of a flat panel solar cell in the absorption band of silicon material. It can be seen that the average enhancement factor of the super-surface structure is still as high as 2.43 when the incident angle is increased to 60 deg., which is 18% higher compared to the pyramid, indicating the excellent angular characteristics of the super-surface structure, which also has excellent absorption properties at wide angle incidence.
The method for preparing the super-surface light trapping structure comprises the following steps.
Firstly, a layer of resist coating is uniformly coated on a substrate by a spin coating covering method.
And step two, after electron beam exposure is carried out on the resist layer, the resist is developed to manufacture a mask with a periodic super surface array structure.
And step three, transferring the pattern on the resist to the silicon substrate by using a chemical or physical etching method, wherein the chemical or physical etching method comprises but is not limited to reactive ion etching, wet etching and the like.
And step four, washing off the residual resist, and covering a layer of passivation film on the surfaces of the light trapping structures such as the super surface and the like by methods such as vacuum sputtering film formation and the like.
The super-surface light trapping structure based on the thin-film silicon solar cell provided by the invention reserves light trapping capacity brought by the periodic gradual change of the refractive index of the traditional light trapping structure, meanwhile, the asymmetric cross resonator at the center of the super-surface can excite Mie resonance on visible light and near infrared spectrum, and can generate more waveguide mode resonance according to the asymmetric mode of the optical waveguide theory to more effectively couple light into the absorber. This makes the super-surface structure more advantageous in improving the short-circuit current density of the solar cell.
Claims (4)
1. A periodic full-medium super-surface light trapping structure for improving the efficiency of a thin-film silicon cell is characterized in that,
(1) the structure has:
the center of each period of the structure body is an asymmetric cross-shaped trapezoid, the length and the height of the structure body can be changed, and the change range is 100-500 nm;
symmetric nano square blocks are distributed at four corners of each period, the side length of each nano square block can be changed, and the change range is 40-150 nm;
(2) the preparation method of the periodic all-dielectric super-surface light trapping structure comprises the following steps:
a step of forming a resist film on a silicon substrate;
a step of performing electron beam exposure on the resist film to leave a periodic latent image on the resist film;
a step of forming the above-described structure on the resist film by development after electron beam exposure;
and a step of etching a periodic super-surface light trapping structure on the silicon by a dry method by taking the developed resist as a mask.
2. The periodic all-dielectric super-surface light trapping structure for improving the efficiency of a thin film silicon cell as claimed in claim 1, wherein: the optimum length of the asymmetric cross-trapezoid is 375 nm.
3. The periodic all-dielectric super-surface light trapping structure for improving the efficiency of a thin film silicon cell as claimed in claim 1, wherein: the optimal side length of the symmetrical nano square is 80 nm.
4. The periodic all-dielectric subsurface light trapping structure for improving the efficiency of a thin film silicon cell as claimed in claim 1, wherein the manufacturing method of the periodic all-dielectric subsurface light trapping structure comprises the following steps:
and a step of manufacturing the super-surface light trapping structure with the surface by using a method of combining electron beam direct writing lithography with dry etching.
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| CN201910455847.1A CN111599877B (en) | 2019-05-29 | 2019-05-29 | All-dielectric super-surface light trapping structure for solar cell and preparation method thereof |
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| CN201910455847.1A CN111599877B (en) | 2019-05-29 | 2019-05-29 | All-dielectric super-surface light trapping structure for solar cell and preparation method thereof |
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| CN111599877A CN111599877A (en) | 2020-08-28 |
| CN111599877B true CN111599877B (en) | 2022-03-11 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202307918U (en) * | 2011-11-01 | 2012-07-04 | 宁波市鑫友光伏有限公司 | Solar silicon wafer textured structure |
| CN102798615A (en) * | 2011-05-23 | 2012-11-28 | 中国科学院微电子研究所 | Periodic nanostructure-based biosensor and preparation method thereof |
| CN103579416A (en) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Method for manufacturing template of inverted pyramid structure |
| CN105261665A (en) * | 2015-11-12 | 2016-01-20 | 杭州电子科技大学 | Crystalline silicon solar cell with high-efficiency light tripping structure and preparation method of crystalline silicon solar cell |
| CN107546284A (en) * | 2017-07-13 | 2018-01-05 | 电子科技大学 | A kind of reverse wedge body light trapping structure and preparation method thereof |
| CN207651507U (en) * | 2017-12-21 | 2018-07-24 | 山东新华联智能光伏有限公司 | solar battery sheet with light trapping structure |
-
2019
- 2019-05-29 CN CN201910455847.1A patent/CN111599877B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798615A (en) * | 2011-05-23 | 2012-11-28 | 中国科学院微电子研究所 | Periodic nanostructure-based biosensor and preparation method thereof |
| CN202307918U (en) * | 2011-11-01 | 2012-07-04 | 宁波市鑫友光伏有限公司 | Solar silicon wafer textured structure |
| CN103579416A (en) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Method for manufacturing template of inverted pyramid structure |
| CN105261665A (en) * | 2015-11-12 | 2016-01-20 | 杭州电子科技大学 | Crystalline silicon solar cell with high-efficiency light tripping structure and preparation method of crystalline silicon solar cell |
| CN107546284A (en) * | 2017-07-13 | 2018-01-05 | 电子科技大学 | A kind of reverse wedge body light trapping structure and preparation method thereof |
| CN207651507U (en) * | 2017-12-21 | 2018-07-24 | 山东新华联智能光伏有限公司 | solar battery sheet with light trapping structure |
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