CN105261665A - Crystalline silicon solar cell with high-efficiency light tripping structure and preparation method of crystalline silicon solar cell - Google Patents
Crystalline silicon solar cell with high-efficiency light tripping structure and preparation method of crystalline silicon solar cell Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000011159 matrix material Substances 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 25
- 239000004411 aluminium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 11
- 210000001142 back Anatomy 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000005459 micromachining Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000007789 gas Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 150000001398 aluminium Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a crystalline silicon solar cell with a high-efficiency light tripping structure and a preparation method of the crystalline silicon solar cell. The cell comprises a front electrode layer, a transparent conductive antireflection layer, a light tripping P-type emission layer, an N-type absorption layer, an N+ doping layer and a back electrode layer in a light irradiation direction in sequence. A backlight surface of the N-type absorption layer is provided with the back electrode layer which forms ohmic contact with the N-type absorption layer. A sensitive surface of the N-type absorption layer is provided with blind holes which are of an inverted quadrangular frustum structure and which are distributed in a matrix. The method uses micromachining technologies such as photoetching for preparing a periodic ordered inverted quadrangular frustum-structured blind hole matrix array; a magnetron sputtering method is used for preparing the conductive antireflection layer; a screen printing technology is used for preparing a theta-shaped front electrode; and the sensitive surface of the electrode is a periodic ordered inverted quadrangular frustum-structured blind hole matrix which is special and which enables the cell to absorb more than 90% visible light.
Description
Technical field
The invention belongs to area of solar cell, relate to and a kind ofly there is crystal silicon solar energy battery of efficient light trapping structure and preparation method thereof, particularly a kind of novel monocrystalline silicon photovoltaic cell structure in visible ray with high-absorbility and preparation method thereof.
Background technology
Solar cell is the promising a kind of battery of most in current New Energy Industry, and it comprises monocrystalline silicon battery, polycrystal silicon cell and hull cell.But on current solar cell market, monocrystalline silicon battery or major product.Improving the absorption of monocrystaline silicon solar cell to light is a kind of Main Means improving monocrystaline silicon solar cell further.Photovoltaic cell those of skill in the art improve crystal silicon cell to light absorption having been done a large amount of technological innovations and improvement, as relevant bibliographical information (NatureMaterials, 9205-213), at some metal nanoparticles of monocrystalline silicon battery surface deposition, utilize the plasma resonance absorption effect of metal nanoparticle to improve the light absorption of single crystal silicon solar cell, also has bibliographical information (NanoLett.2010,10,1082 – 1087), form silicon nanowires in the preparation of monocrystalline silicon light receiving surface and strengthen the absorption of monocrystaline silicon solar cell to light.But these processes are very complicated and cost is high.Moreover, this several process can not play good humidification to the light absorption of monocrystaline silicon solar cell within the scope of long-wave band.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, a kind of crystal silicon solar energy battery with efficient light trapping structure is provided.This monocrystalline silicon battery is because preparation forms periodically orderly inversion truncated rectangular pyramids blind hole structure array on monocrystalline silicon piece, thus makes it have high-absorbility to light.
The present invention has the high monocrystalline silicon photovoltaic cell falling into luminous effect and comprises front electrode layer, electrically conducting transparent antireflection layer successively from light direction of illumination, fall into light P type emission layer, N-type absorbed layer, N
+doped layer, dorsum electrode layer; Wherein electrically conducting transparent antireflection layer is tco layer, and P type emission layer is as the sensitive surface of monocrystalline silicon photovoltaic cell of the present invention, and N-type absorbed layer is monocrystalline silicon piece, as the shady face of monocrystalline silicon photovoltaic cell of the present invention;
The shady face of described N-type absorbed layer is provided with the dorsum electrode layer forming ohmic contact with N-type absorbed layer; The sensitive surface of N-type absorbed layer has the blind hole of some inversion truncated rectangular pyramids structures in matrix distribution by micro fabrication, and then being provided with P type emission layer, tco layer by diffusion and coating process successively at the sensitive surface of N-type absorbed layer, design makes blind hole matrix array periodically in order utilize optically focused to strengthen battery to the absorption of sunlight like this; Spacing distance wherein between adjacent blind hole is 1 ~ 2um, is preferably 1um; The rectangle of the end face of blind hole to be the length of side be 10 ~ 13um, bottom surface is the rectangle that the length of side is less than 1um, and four sidewalls are inverted isosceles trapezoid.
Described front electrode is day font aluminium electrode, and live width is 1 ~ 2mm, and the design of this day font reduces the reflection of front electrode pair sunlight;
Described tco layer can be all transparent conductive film, as the film of ZnO, SnO2, ITO etc. and doping thereof;
The thickness of described P type emission layer is within 500nm;
Described N-type absorbed layer is doping content is 1.0 × 10
18~ 1.0 × 10
19monocrystalline silicon piece, thickness is 100 ~ 300um;
Described N
+doped layer is heavy doping, and concentration is 1.0 × 10
20above, all doping way can be adopted;
The aluminium electrode plate of described back electrode to be thickness be more than 100nm;
Another object of the present invention is to provide the preparation method of the monocrystaline silicon solar cell of above-mentioned efficient light trapping structure, and the method comprises the following steps:
Using monocrystalline silicon piece as N-type absorbed layer, then utilize micro fabrication to have the blind hole of some inversion truncated rectangular pyramids structures at its sensitive surface, these blind holes are the distribution of matrix periodic ordered array;
Adopt diffusion technology in above-mentioned blind hole, prepare P type emission layer;
Diffusion technology is adopted to prepare N at N-type single-chip shady face
+doped layer;
The coating process such as magnetron sputtering are utilized to prepare tco layer at the sensitive surface of P type emission layer;
Utilize silk-screen printing technique on the sensitive surface of tco layer date of printing font aluminium electrode as front electrode layer;
Utilize silk-screen printing technique at N
+the shady face printing aluminium electrode of doped layer is as dorsum electrode layer.
The invention has the beneficial effects as follows: the invention provides monocrystaline silicon solar cell of a kind of efficient light trapping structure and preparation method thereof, blind hole matrix oldered array is prepared in conjunction with micro fabrication, utilize the optically focused effect of blind hole matrix, greatly enhance the light absorption of monocrystaline silicon solar cell in visible light wave range, the absorptivity of monocrystaline silicon solar cell to the light of wavelength in 550 scopes to 1000nm can be realized more than 90%.
Accompanying drawing explanation
Fig. 1 is the structural representation of the periodically orderly blind hole matrix array of the present invention;
Fig. 2 is the profile of battery of the present invention;
Fig. 3 is the structural representation of electrode before the present invention;
Fig. 4 is the scanning electron microscopic picture of the orderly blind hole matrix array of periodicity formed at N-type absorbed layer sensitive surface by dimension processing technology;
Fig. 5 is the scanning electron microscopic picture of single inversion truncated rectangular pyramids structure blind hole;
Fig. 6 is the scanning electron microscopic picture of the cross-section structure of single inversion truncated rectangular pyramids structure blind hole;
Fig. 7 is the high optical absorption map of monocrystalline silicon photovoltaic cell within the scope of wavelength 400 ~ 1000nm falling into luminous effect;
Wherein 1 is periodically orderly blind hole matrix array, and 2 is conduction antireflection layer (tco layer), and 3 is P type emission layer, and 4 is N-type absorbed layer, and 5 is N
+doped layer, 6 is dorsum electrode layer.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, gives detailed execution mode and specific operation process, but protection scope of the present invention is not limited to following embodiment.
Disclosed in this invention have the high monocrystalline silicon photovoltaic cell falling into luminous effect.Battery structure is: comprise front electrode layer, electrically conducting transparent antireflection layer, P type emission layer, N-type absorbed layer, N successively from light irradiation sequence
+doped layer, dorsum electrode layer; Wherein electrically conducting transparent antireflection layer is tco layer, and P type emission layer is as the sensitive surface of monocrystalline silicon photovoltaic cell, and N-type absorbed layer is monocrystalline silicon substrate, as the shady face of monocrystalline silicon photovoltaic cell;
The shady face of described N-type absorbed layer is provided with the dorsum electrode layer forming ohmic contact with N-type absorbed layer; The sensitive surface of N-type absorbed layer has the blind hole of some inversion truncated rectangular pyramids structures in matrix distribution by micro fabrication, and then being provided with P type emission layer, tco layer by diffusion and coating process successively at the sensitive surface of N-type absorbed layer, design makes blind hole matrix array periodically in order utilize optically focused to strengthen battery to the absorption of sunlight like this; Spacing distance wherein between adjacent blind hole is 1 ~ 2um, is preferably 1um; The rectangle of the end face of blind hole to be the length of side be 10 ~ 13um, bottom surface is the rectangle that the length of side is less than 1um, and four sidewalls are inverted isosceles trapezoid.
Described front electrode is day font aluminium electrode, and live width is 1-2mm, and the design of this day font reduces the reflection of front electrode pair sunlight.
Embodiment 1:
The present embodiment comprises the following steps:
Step (1), as shown in Figure 1, select crystal face be 001 n type single crystal silicon substrate 4, by the semiconductor cleaning process of standard, monocrystalline silicon surface is cleaned.On this monocrystalline silicon piece, the silicon nitride layer preparing one deck densification is deposited by the method for plasma reinforced chemical vapour deposition (PECVD).Preparation condition is: with the silane (SiH of nitrogen dilution to 10%
4) and ammonia be reacting gas, silane gas flow is 30sccm, and ammonia gas flow is 60sccm, and the back end vacuum degree of vacuum chamber is 3 × 10
-4pa, operating air pressure is 20Pa, and underlayer temperature is 300 DEG C, and plasma radiofrequency power is 80W.Growth thickness is the silicon nitride layer of 0.25 micron under these conditions.Then on the monocrystalline silicon piece being coated with silicon nitride, one deck SiO is deposited by the method for magnetron sputtering
2.Preparation condition is: take Ar as sputter gas, and flow is 20sccm, take silicon target as sputtering target, and sputtering pressure is 1Pa, and radio-frequency power is 100W.Then by photoetching process, in conjunction with HF acid and phosphoric acid respectively to the etching process of silicon dioxide and silicon nitride, the orderly square window array of periodicity of length of side 10um is carved at the sensitive surface of monocrystalline silicon substrate; Then the KOH solution n type single crystal silicon substrate with window array periodically in order being put into high concentration carries out anisotropic corrosion, is finally formed at the sensitive surface of monocrystalline silicon substrate and is inverted truncated rectangular pyramids array of blind holes 1 periodically in order.Utilize the single inversion truncated rectangular pyramids blind hole structure of the reality of step (1) operation gained as shown in Figure 5, as shown in Figure 6, actual periodicity is inverted truncated rectangular pyramids blind hole matrix array as shown in Figure 4 to its profile in order.
Step (2), as shown in Figure 2, adopts gas source diffusion technique to carry out the diffusion of P type to the sensitive surface surface of n type single crystal silicon substrate, forms P type diffused layer 3.
Step (3), as shown in Figure 2, utilize magnetron sputtering membrane process, the periodicity obtained in step (2) is inverted truncated rectangular pyramids blind hole matrix array in order and is carried out sputtering plating conduction antireflection layer 2 (TCO film) on the surface.Target can be the ceramic target such as ITO, FTO, AZO.Sputtering pressure is 0.5Pa, passes into O in sputter procedure simultaneously
2and Ar.The thickness of tco layer is 50-100nm.
Step (3), as shown in Figure 2, carry out N at the shady face of N-type substrate
+doping, forms N
+doped layer 5; To preparation N
+the realization of doped layer adopts rta technique scheme, applies, put into quick anneal oven afterwards and anneal at N-type absorbed layer shady face 50% phosphoric acid.
Step (4), logical screen printing technique are at N
+the shady face of doped layer prints aluminium electrode 6 dull and stereotyped.
Silk screen printing aluminium electrode 7 in step (5), the TCO thin film that obtains in step 4.The day font electrode of aluminium electrode to be width be 2mm, as shown in Figure 3.
Step (6), sintering n type single crystal silicon substrate, temperature is 400 degree, makes aluminium electrode and N
+doped layer forms ohmic contact.
Step (7), sintering n type single crystal silicon substrate, temperature is 400 degree, the TCO thin film crystallization that step 5 is obtained, and strengthens conductivity.
Step (8), utilize UV-Visible spectrophotometer to test the prepared optical absorption spectra that carries out with the monocrystaline silicon solar cell being periodically inverted truncated rectangular pyramids blind hole matrix structure, the optical absorption spectra of gained within the scope of wavelength 400-1000nm as shown in Figure 7.
Embodiment 2:
The present embodiment comprises the following steps:
Step (1), as shown in Figure 1, select crystal face be 001 n type single crystal silicon substrate 4, by the semiconductor cleaning process of standard, monocrystalline silicon surface is cleaned.Cleaned substrate is put into the atmosphere furnace being full of high pure nitrogen and carries out grown silicon nitride film, temperature is 1000 DEG C.Then on the monocrystalline silicon piece being coated with silicon nitride, one deck SiO2 is deposited by plasma reinforced chemical vapour deposition (PECVD) process.Preparation condition is: with the silane (SiH of nitrogen dilution to 10%
4) and N
2o is reacting gas, and silane gas flow is 30sccm, N
2o gas flow is 25sccm, and the back end vacuum degree of vacuum chamber is 3 × 10
-4pa, operating air pressure is 10Pa, and underlayer temperature is 300 DEG C, and radio-frequency power is 200W.Growth thickness is the silicon oxide layer of 0.1 micron under these conditions.Then by photoetching process, in conjunction with HF acid and phosphoric acid respectively to the etching process of silicon dioxide and silicon nitride, the orderly square window array of periodicity of length of side 10um is carved at the sensitive surface of monocrystalline silicon substrate; Then the KOH solution n type single crystal silicon substrate with window array periodically in order being put into high concentration carries out anisotropic corrosion, is finally formed at the sensitive surface of monocrystalline silicon substrate and is inverted truncated rectangular pyramids blind hole matrix array 1 periodically in order.Utilize the single inversion truncated rectangular pyramids blind hole structure of the reality of step (1) operation gained as shown in Figure 5, as shown in Figure 6, actual periodicity is inverted truncated rectangular pyramids blind hole matrix array as shown in Figure 4 to its profile in order.
Step (2), as shown in Figure 2, utilizes diffusion technology that the n type single crystal silicon substrate being inverted truncated rectangular pyramids blind hole matrix array surface periodically in order that has that step (1) obtains is carried out to P type diffused layer and launches 3; P type is carried out to n type single crystal silicon substrate and adopts rta technique scheme, apply at P type sensitive surface 50% boric acid, put into quick anneal oven afterwards and anneal, annealing temperature 950 DEG C.
Step (3), as shown in Figure 2, utilize magnetron sputtering membrane process, the periodicity obtained in step (2) is inverted truncated rectangular pyramids blind hole matrix array in order and is carried out sputtering plating conduction antireflection layer 2 (TCO film) on the surface.Target can be the ceramic target such as ITO, FTO, AZO.Sputtering pressure is 0.5Pa, passes into O in sputter procedure simultaneously
2and Ar.The thickness of tco layer is 50-100nm.
Step (3), as shown in Figure 2, carry out N at the shady face of N-type substrate
+doping, forms N
+doped layer 5; To preparation N
+the realization of doped layer adopts rta technique scheme, applies, put into quick anneal oven afterwards and anneal at N-type shady face 50% phosphoric acid.
Step (4), logical magnetron sputtering membrane process N
+on doped layer, sputtering sedimentation electrode 6 is dull and stereotyped.
Silk screen printing aluminium electrode 7 in step (5), the TCO thin film that obtains in step 4.The day font electrode of this aluminium electrode to be width be 2mm, as shown in Figure 3.
Step (6), sintering n type single crystal silicon substrate, temperature is 400 degree, makes aluminium electrode and N
+doped layer forms ohmic contact
Step (7), sintering n type single crystal silicon substrate, temperature is 400 degree, the TCO thin film crystallization that step 5 is obtained, and strengthens conductivity.
Step (8), utilize UV-Visible spectrophotometer to test the prepared optical absorption spectra that carries out with the monocrystaline silicon solar cell of periodically orderly inversion truncated rectangular pyramids blind hole matrix array structure, the optical absorption spectra of gained within the scope of wavelength 400-1000nm as shown in Figure 7.
Embodiment 3:
The present embodiment comprises the following steps:
Step (1), as shown in Figure 1, select crystal face be 001 n type single crystal silicon substrate 4, by the semiconductor cleaning process of standard, monocrystalline silicon surface is cleaned.Then on the monocrystalline silicon piece being coated with silicon nitride, one deck silicon nitride is deposited by magnetron sputtering technique method.Preparation condition is: take argon gas as sputter gas, and gas flow is 20sccm, and nitrogen is reacting gas, and flow is 10sccm, and the back end vacuum degree of vacuum chamber is 3 × 10
-4pa, sputtering pressure is 1Pa, and sputtering target material is high-purity silicon target, and radio-frequency power is 100W.Growth thickness is the silicon nitride layer of 0.2 micron under these conditions.Then, on the monocrystalline silicon piece being coated with silicon nitride, layer of silicon dioxide is deposited by magnetron sputtering technique method.Preparation condition is: take argon gas as sputter gas, and gas flow is 20sccm, and the back end vacuum degree of vacuum chamber is 3 × 10
-4pa, sputtering pressure is 1Pa, and sputtering target material is high-purity silicon dioxide target, and radio-frequency power is 200W.Growth thickness is the silicon dioxide layer of 0.2 micron under these conditions.Then by photoetching process, in conjunction with HF acid and phosphoric acid respectively to the etching process of silicon dioxide and silicon nitride, the orderly square window array of periodicity of length of side 10um is carved at the sensitive surface of monocrystalline silicon substrate; Then the KOH solution n type single crystal silicon substrate with window array periodically in order being put into high concentration carries out anisotropic corrosion, is finally formed at the sensitive surface of monocrystalline silicon substrate and is inverted truncated rectangular pyramids blind hole matrix array 1 periodically in order.Utilize the single inverted pyramidal structures of the reality of step (1) operation gained as shown in Figure 5, as shown in Figure 6, actual periodicity is inverted truncated rectangular pyramids blind hole matrix array as shown in Figure 4 to its profile in order.
Step (2), as shown in Figure 2, utilizes diffusion technology that the n type single crystal silicon substrate being inverted truncated rectangular pyramids blind hole matrix array surface periodically in order that has that step (1) obtains is carried out to P type diffused layer and launches 3; P type is carried out to n type single crystal silicon substrate and adopts rta technique scheme, apply at P type sensitive surface 50% boric acid, put into quick anneal oven afterwards and anneal, annealing temperature 950 DEG C.
Step (3), as shown in Figure 2, utilize magnetron sputtering membrane process, the periodicity obtained in step (2) is inverted truncated rectangular pyramids blind hole matrix array in order and is carried out sputtering plating conduction antireflection layer 2 (TCO film) on the surface.Target can be the ceramic target such as ITO, FTO, AZO.Sputtering pressure is 0.5Pa, passes into O in sputter procedure simultaneously
2and Ar.The thickness of tco layer is 50-100nm.
Step (3), as shown in Figure 2, carry out N at the shady face of N-type substrate
+doping, forms N
+doped layer 5; To preparation N
+the realization of doped layer adopts gas source diffusion technique to spread.
Step (4), logical magnetron sputtering membrane process N
+on doped layer, sputtering sedimentation electrode 6 is dull and stereotyped.
Silk screen printing aluminium electrode 7 in step (5), the TCO thin film that obtains in step 4.The day font electrode of this aluminium electrode to be width be 2mm, as shown in Figure 3.
Step (6), sintering n type single crystal silicon substrate, temperature is 400 degree, makes aluminium electrode and N
+doped layer forms ohmic contact.
Step (7), sintering n type single crystal silicon substrate, temperature is 400 degree, the TCO thin film crystallization that step 5 is obtained, and strengthens conductivity.
Step (8), utilize UV-Visible spectrophotometer to test the prepared optical absorption spectra that carries out with the monocrystaline silicon solar cell being periodically inverted truncated rectangular pyramids blind hole matrix structure, the optical absorption spectra of gained within the scope of wavelength 400-1000nm as shown in Figure 7.
The content be not described in detail in specification of the present invention belongs to the known prior art of professional and technical personnel in the field.Above-described embodiment is not that the present invention is not limited only to above-described embodiment for restriction of the present invention, as long as meet application claims, all belongs to protection scope of the present invention.
Claims (10)
1. there is a crystal silicon solar energy battery for efficient light trapping structure, it is characterized in that comprising front electrode layer, electrically conducting transparent antireflection layer successively from light direction of illumination, falling into light P type emission layer, N-type absorbed layer, N
+doped layer, dorsum electrode layer;
The shady face of described N-type absorbed layer is provided with the dorsum electrode layer forming ohmic contact with N-type absorbed layer; The sensitive surface of N-type absorbed layer has the blind hole of some inversion truncated rectangular pyramids structures in matrix distribution.
2. there is a preparation method for the crystal silicon solar energy battery of efficient light trapping structure, it is characterized in that the method is as follows:
Using monocrystalline silicon piece as N-type absorbed layer, then utilize micro fabrication to have the blind hole of some inversion truncated rectangular pyramids structures at its sensitive surface, these blind holes are the distribution of matrix periodic ordered array;
Adopt diffusion technology in above-mentioned blind hole, prepare P type emission layer;
Diffusion technology is adopted to prepare N at N-type single-chip shady face
+doped layer;
The coating process such as magnetron sputtering are utilized to prepare tco layer at the sensitive surface of P type emission layer;
Electrode layer before utilizing silk-screen printing technique to print on the sensitive surface of tco layer;
Utilize silk-screen printing technique at N
+the shady face printing of doped layer and N-type absorbed layer form the dorsum electrode layer of ohmic contact.
3. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that the spacing distance in blind hole matrix array between adjacent blind hole is 1 ~ 2um.
4. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that the spacing distance in blind hole matrix array between adjacent blind hole is 1um.
5. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that the end face of blind hole in blind hole matrix array to be the length of side be the rectangle of 10 ~ 13um, bottom surface is the rectangle that the length of side is less than 1um, and four sidewalls are inverted isosceles trapezoid.
6. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that described front electrode is day font aluminium electrode, live width is 1 ~ 2mm.
7. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that the thickness of described P type emission layer is within 500nm.
8. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that described N-type absorbed layer be doping content is 1.0 × 10
18~ 1.0 × 10
19monocrystalline silicon piece, thickness is 100 ~ 300um.
9. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that described N
+doped layer is heavy doping, and concentration is 1.0 × 10
20above.
10. as claimed in claim 1 a kind of there is efficient light trapping structure crystal silicon solar energy battery or a kind of preparation method with the crystal silicon solar energy battery of efficient light trapping structure as claimed in claim 2, it is characterized in that described back electrode to be thickness be the aluminium electrode plate of more than 100nm.
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| CN107546284A (en) * | 2017-07-13 | 2018-01-05 | 电子科技大学 | A kind of reverse wedge body light trapping structure and preparation method thereof |
| CN107942461A (en) * | 2016-10-13 | 2018-04-20 | 大立光电股份有限公司 | Annular optical element, imaging lens group, imaging device and electronic device |
| CN110224038A (en) * | 2018-03-02 | 2019-09-10 | 中芯国际集成电路制造(上海)有限公司 | Photodiode and forming method thereof |
| CN111599877A (en) * | 2019-05-29 | 2020-08-28 | 电子科技大学 | Super-surface light trapping structure for solar cell and preparation method thereof |
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