CN103924306B - A kind of etching method of silicon heterojunction solar battery - Google Patents
A kind of etching method of silicon heterojunction solar battery Download PDFInfo
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Abstract
A kind of etching method of silicon heterojunction solar battery. The method is carried out the technique of two step making herbs into wool to the monocrystalline silicon piece of solar cell, silicon chip surface form 3-10 μ m round and smooth pyramid structure, removed silicon chip surface metal ion residual, realized the modification of pattern and electrology characteristic. The method can effectively reduce the reflectivity of silicon chip surface in 400-1200nm wave-length coverage, has improved battery output characteristics, and its preparation method is simple, easy to implement.
Description
Technical field
The present invention relates to the manufacture field of silicon heterojunction solar battery, particularly a kind of silicon heterojunction solar battery surface wool manufacturing preparation method and application thereof.
Background technology
Photovoltaic generation is that the internationally recognized solution energy lacks one of effective way with problem of environmental pollution. Silicon heterojunction solar battery because of its conversion efficiency high, preparation process low power consuming, production cost is comparatively cheap etc., and advantage is subject to extensive concern. Than traditional monocrystalline silicon battery, silicon heterojunction solar battery adopts amorphous silicon thin-film materials as emission layer and passivation layer, has higher open-circuit voltage, but amorphous silicon material is as one collimation tape splicing gap material, has larger absorption coefficient. Therefore,, in order to improve the photoelectric transformation efficiency of battery, just must increase the sunken luminous energy power of battery to improve short-circuit current density. Matte silicon substrate, owing to having good sunken light effect, can obviously improve the short circuit current of battery. The inorganic bases such as at present conventional NaOH can be realized being uniformly distributed of silicon chip surface gold tower to monocrystalline substrate making herbs into wool, and pyramid size can be controlled between 5-15 μ m, fall into optical property good. But substrate surface for roughness after its making herbs into wool increases, and has more pyramid spike, makes intrinsic amorphous silicon passivation thin layer be difficult to uniform deposition at monocrystalline silicon surface, deteriorated interface quality. Trimethylammonium hydroxide (TMAH) has been applied to silicon chip surface making herbs into wool as a kind of organic base. Than NaOH solution, pyramid size after TMAH making herbs into wool is less, the making herbs into wool time is shorter, pattern is more round and smooth, and there is no the residual of metal ion, is more suitable for as the making herbs into wool solvent that boundary defect state is required to strict silicon heterojunction solar battery. But because TMAH solution price is higher at present, be difficult to be widely adopted in suitability for industrialized production. Therefore, explore a kind of meet relatively inexpensive, falling into good, the pattern characteristic good of light, the residual few monocrystalline substrate of metal ion, to fall into light method be the key that promotes silicon heterojunction solar battery process for etching.
Summary of the invention
The present invention seeks to the problem for above-mentioned existence, by the etching method that adopts NaOH solution and the combination of TMAH solution phase, the monocrystalline substrate of silicon heterojunction solar battery is carried out to making herbs into wool. This structure can fall under the prerequisite of luminous energy power at the wide spectrum that ensures making herbs into wool substrate, and further optimizing metal word tower distribution of sizes, appearance structure and surface characteristic, realizes the object that improves battery output characteristics parameter, and its preparation method is cheap simple, easy to implement.
Technical scheme of the present invention:
A kind of silicon heterojunction solar battery etching method, is that monocrystalline substrate is being passed through acetone and the each Ultrasonic Cleaning 5min of ethanolic solution, removes silicon chip surface partial organic substances and metallic and stains. Adopt deionized water rinsing totally afterwards sample to be placed in to 80 DEG C of temperature, concentration is that the damage layer that goes that carries out 10min in the inorganic alkali solution of 1-3% is processed, utilize the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the mechanical damage layer that silicon chip surface stays in cutting process, obtain comparatively smooth silicon chip surface, then sample is put into deionized water and rinse after 3min for subsequent use. Making herbs into wool process is mainly divided into two steps, and first step making herbs into wool is inorganic base, isopropyl alcohol (IPA) and the Na by containing low concentration2SiO3Solution prepare the relatively large pyramid pattern of size and distribute, utilize low solubility alkali lye to corrode to carry out surface to the anisotropic of monocrystalline silicon piece and carry out texturing, from making herbs into wool solution, take out afterwards, use a large amount of deionized water rinsings. Second step making herbs into wool is that the mixed solution that sample that first step making herbs into wool was processed is put into organic base and IPA carries out making herbs into wool, utilize organic alkali lye to corrode to carry out surface to the anisotropic of monocrystalline silicon and carry out texturing, make silicon chip surface pyramid more round and smooth and present the topographic profile that large pyramidion is alternate, step as shown in Figure 1. In said process, after first step making herbs into wool, the gold Sopwith staff of silicon chip surface cun is mainly distributed between 5-12 μ m; After second step making herbs into wool, silicon chip surface pyramid is evenly distributed between 3-10 μ m, and reflectivity obviously reduces.
Wherein in first step making herbs into wool, inorganic base can be selected NaOH or KOH, the inorganic base that each constituent mass concentration is 1-3%, the Na of 0.5-2%2SiO3, 6% isopropyl alcohol (IPA), making herbs into wool temperature is between 75 ~ 85 DEG C, the time is 35min ~ 45min, making herbs into wool finishes the rear deionized water rinsing 3min that uses.
In second step making herbs into wool, organic base can be any one in TMAH (TMAH), ethylenediamine, second triamine, methanediamine, TBAH, making herbs into wool temperature is between 75 ~ 85 DEG C, the making herbs into wool time regulates between 3min ~ 10min, after making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The mode of heating of above-mentioned making herbs into wool solution is the heating of closed waters, also can adopt open-heating mode. The silicon chip of making herbs into wool is that the cutting blade in N-type (100) crystal orientation can be also P type, and the structure of solar cell can be HIT structure, SHJ structure or HBC structure, and the selected substrate of making herbs into wool can be Cz or FZ substrate.
Advantage of the present invention and good effect:
By in conjunction with inorganic base making herbs into wool and two kinds of solvents of organic base to monocrystalline silicon surface making herbs into wool. First step making herbs into wool utilizes the inorganic alkali lye of low solubility to produce and have the textured surfaces that pyramid distributes monocrystalline silicon surface anisotropic etching. The pyramid size that inorganic base making herbs into wool produces is larger, long wave incident light is had to good light trapping effect, and inorganic alkali solution price is relatively inexpensive, and the first step adopts inorganic alkali solution making herbs into wool to obtain the cost that suede structure is conducive to reduce substrate making herbs into wool. Second step making herbs into wool is on the basis of first step making herbs into wool, adopts organic base as the making herbs into wool of TMAH solution, makes silicon chip surface be evenly distributed with the mutually nested pyramid of size. Because the molecular polarity of the organic base solution of TMAH is less with respect to inorganic base, so it more easily adheres at silicon chip surface, concentration is higher, so the time of second step organic base making herbs into wool is relatively short, and after organic base making herbs into wool, pyramid size is more round and smooth, and Ta Feng and tower paddy are got rid of by the smoothing effect of organic base solution. This appearance structure is suitable as the substrate of silicon heterojunction solar battery, can suppress amorphous silicon membrane in its surperficial epitaxial growth, falls the low electric leakage gully density of battery. In addition, organic base making herbs into wool design is implemented after inorganic base making herbs into wool, can be realized the effect of the metal ion pollution producing after clean inorganic base making herbs into wool, improved the electrology characteristic of making herbs into wool silicon chip surface, and then improved the output characteristics of silicon heterojunction solar battery.
Brief description of the drawings
The implementation step schematic diagram of Fig. 1 etching method of the present invention.
Fig. 2 is the wafer topography figure that adopts single step NaOH making herbs into wool to obtain.
Fig. 3 is the wafer topography figure that adopts single step TMAH making herbs into wool to obtain.
Fig. 4 is the wafer topography figure that adopts two step etching method of the present invention to prepare.
Fig. 5 adopts respectively silicon chip surface prepared by single step NaOH making herbs into wool, single step TMAH making herbs into wool and the two step etching method of the present invention reflectance map to different lambda1-wavelengths.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, technical solutions according to the invention are described in detail.
Embodiment 1:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) first step making herbs into wool: going silicon chip after damage layer to put into solution concentration proportioning is 1% NaOH, 0.5% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 30min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min.
4) second step making herbs into wool: the silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 2%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 3min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 1-8 μ m, and the average reflectance between 400nm ~ 1200nm is 14.3%, and silicon chip minority carrier life time is 175 μ s.
Embodiment 2:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) first step making herbs into wool: going silicon chip after damage layer to put into solution concentration proportioning is 3% NaOH, 1% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 40min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min.
4) second step making herbs into wool: the silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 2%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 3min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 2-12 μ m, and the average reflectance between 400nm ~ 1200nm is 12.2%, and silicon chip minority carrier life time is 193 μ s.
Embodiment 3:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) first step making herbs into wool: going silicon chip after damage layer to put into solution concentration proportioning is 3% NaOH, 3% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 35min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min.
4) second step making herbs into wool: the silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 5%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 4min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 2-7 μ m, and the average reflectance between 400nm ~ 1200nm is 14.8%, and silicon chip minority carrier life time is 167 μ s.
Embodiment 4:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) first step making herbs into wool: going silicon chip after damage layer to put into solution concentration proportioning is 1% NaOH, 1% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 40min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min.
4) second step making herbs into wool: the silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 2%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 10min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 4-11 μ m, and the average reflectance between 400nm ~ 1200nm is 13.7%, and silicon chip minority carrier life time is 207 μ s.
Embodiment 5:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) going silicon chip after damage layer to put into solution concentration proportioning is 1% NaOH, 1% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 40min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 5-12 μ m, as shown in Figure 2. The average reflectance of substrate between 400nm ~ 1200nm is 16.1%, and silicon chip minority carrier life time is 121 μ s.
Embodiment 6:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 2%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 5min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 3-10 μ m, and as shown in Figure 3, the average reflectance between 400nm ~ 1200nm is 12.6%, and silicon chip minority carrier life time is 189 μ s.
Embodiment 7:
1) after putting into acetone soln Ultrasonic Cleaning 5min, takes out the cutting silicon wafer of getting N-type (100) crystal orientation; After deionized water rinsing 3min, put into ethanol solution Ultrasonic Cleaning 5min, after taking out, use deionized water rinsing 3min.
2) silicon chip having cleaned being put into concentration is 10% NaOH solution, solution temperature is 80 DEG C, reaction time is 10min, with glass bar, solution is stirred during this time, emitting of accelerated reaction gas, mode of heating is heating water bath, utilizes the feature of the isotropic etch to silicon chip under high-concentration alkali liquor high temperature to remove the damage layer of silicon chip surface, obtains comparatively smooth silicon chip surface. Take out afterwards sample, use deionized water rinsing 3min.
3) first step making herbs into wool: going silicon chip after damage layer to put into solution concentration proportioning is 1% NaOH, 1% Na2SiO3, 6% IPA mixed solution in, making herbs into wool temperature is between 80 DEG C, the making herbs into wool time is at 40min. Utilize low solubility alkali lye to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon piece. After making herbs into wool, adopt deionized water rinsing 3min.
4) second step making herbs into wool: the silicon chip after previous step is processed is put into the mixed solution of TMAH, IPA, and the TMAH that solution concentration proportioning is 2%, 10% IPA making herbs into wool temperature are at 80 DEG C, and the making herbs into wool time is 5min. Utilize the organic alkali lye of TMAH to corrode silicon chip surface is carried out to texturing the anisotropic of monocrystalline silicon. After making herbs into wool, adopt deionized water rinsing 3min, adopt afterwards RCA ablution cleaning silicon chip surface, in order to test.
The prepared monocrystalline silicon suede microstructure size of the present embodiment is distributed between 3-12 μ m, and as shown in Figure 4, the average reflectance between 400nm ~ 1200nm is 11.8%, and silicon chip minority carrier life time is 225 μ s.
The gold tower appearance structure that different making herbs into wool solution making herbs into wool produces can be found out in Fig. 2-4, and this structure directly affects the sunken luminous energy power of silicon chip after making herbs into wool. Fig. 5 adopts respectively silicon chip surface prepared by NaOH making herbs into wool, TMAH making herbs into wool and the two step etching method of the present invention reflectance map to different lambda1-wavelengths. NaOH making herbs into wool and TMAH making herbs into wool are less for the reflectivity of long wave and shortwave respectively as seen from the figure, the silicon chip surface that adopts two step etching methods to prepare all has and better falls into light effect at 400-1200nm wave band, this,, owing to by the respectively modulation of two step process for etching to silicon chip surface pyramid size, makes it more be conducive to the sunken light of wide spectrum.
To sum up, the invention provides a kind of etching method of silicon heterojunction solar battery, the method and silicon heterojunction solar battery preparation technology are completely compatible, are generally applicable to the preparation of monocrystalline silicon substrate heterojunction solar cell substrate, method cheapness is simply easy to realize, and is convenient to suitability for industrialized production.
The above; only for preferably detailed description of the invention of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention. Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (4)
1. a silicon heterojunction solar battery etching method, comprises silicon chip pretreatment, goes damage layer and two-step method making herbs into wool, it is characterized in that described silicon chip preprocess method is by the order of acetone-water-absolute ethyl alcohol-water, silicon chip surface to be cleaned; Described method of removing damage layer is pretreated silicon chip to be stirred at 80 DEG C in the inorganic alkali lye of 1%-3% soak washed with de-ionized water after 10min; The first step of described two-step method making herbs into wool is that to put into mass concentration proportioning be the inorganic base of 1-3%, the Na of 0.5-2% to the silicon chip after damage layer2SiO=3, 6% isopropyl alcohol (IPA) mixed solution in, at 75 ~ 85 DEG C, making herbs into wool 35 ~ 45min, then deionized water rinsing 3min, second step be the silicon chip after the described first step is processed to put into mass concentration proportioning be the organic base of 2-5%, the IPA of 9-11%, at 75 ~ 85 DEG C, making herbs into wool 3 ~ 10min, then adopt deionized water rinsing 3min, finally adopt RCA ablution cleaning silicon chip surface.
2. silicon heterojunction solar battery etching method according to claim 1, is characterized in that described silicon chip is FZ or Cz silicon chip, and doping type is N-type or P type.
3.Silicon heterojunction solar battery etching method according to claim 1, is characterized in that described organic base is the one in TMAH (TMAH), ethylenediamine, second triamine, methanediamine or TBAH.
4.Silicon heterojunction solar battery etching method according to claim 1, is characterized in that described inorganic base is NaOH or KOH.
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| CN105113013A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Efficient and environment-friendly monocrystalline silicon piece texture surface making liquid and preparation method thereof |
| CN113529173B (en) * | 2021-07-14 | 2023-07-28 | 西安蓝桥新能源科技有限公司 | Two-step texturing additive for preparing multi-layer pyramid monocrystalline silicon suede and application thereof |
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| SU1829773A1 (en) * | 1991-06-03 | 1996-04-27 | Минский радиотехнический институт | Alkaline etching agent to make silicon plates thinner |
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Method for preparing porous pyramid structure on monocrystalline silicon substrate |
| CN103178159A (en) * | 2013-03-19 | 2013-06-26 | 江苏大学 | Crystalline silicon solar cell etching method |
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| SU1829773A1 (en) * | 1991-06-03 | 1996-04-27 | Минский радиотехнический институт | Alkaline etching agent to make silicon plates thinner |
| CN1697140A (en) * | 2004-05-10 | 2005-11-16 | 中国科学院半导体研究所 | Etching technique for preparing ultrathin flexible silicon sustrate through two step method in wet-process etching |
| CN102140697A (en) * | 2010-12-28 | 2011-08-03 | 中国科学院微电子研究所 | Method for preparing porous pyramid structure on monocrystalline silicon substrate |
| CN103178159A (en) * | 2013-03-19 | 2013-06-26 | 江苏大学 | Crystalline silicon solar cell etching method |
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