CN107151817A - 单晶硅的生长方法及其制备的单晶硅锭 - Google Patents

单晶硅的生长方法及其制备的单晶硅锭 Download PDF

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CN107151817A
CN107151817A CN201610120860.8A CN201610120860A CN107151817A CN 107151817 A CN107151817 A CN 107151817A CN 201610120860 A CN201610120860 A CN 201610120860A CN 107151817 A CN107151817 A CN 107151817A
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monocrystalline silicon
growing method
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肖德元
张汝京
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Zing Semiconductor Corp
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Abstract

本发明提供一种单晶硅的生长方法，是以柴氏拉晶法，将置于坩埚内的硅原料熔化而形成熔体，并提拉该熔体而使单晶硅生长的方法，在形成熔体时通入包括氩气气体；以及在提拉步骤中施加磁场。本发明亦提供一种以该单晶硅制备晶圆的方法。

Description

单晶硅的生长方法及其制备的单晶硅锭
技术领域
本发明是关于硅晶体的生长方法，尤其是关于单晶硅的生长方法。
背景技术
在柴氏拉晶法(Czochralski method)(以下有时称直拉法)之单晶硅生长过程中，由于石英坩埚的熔解，会使得部分氧进入单晶硅中，这些氧主要存在于硅晶格的间隙位置。当间隙氧的浓度超过氧在硅中的溶解度时即发生沉淀，从而形成单晶硅中常见的氧沉淀缺陷，进而对集成电路装置造成损害。
内质吸除(intrinsic gettering)技术，即，藉由一定程序于硅片内形成高密度氧沉淀，而可在该硅片表面形成一定深度的无缺陷的洁净区，该洁净区则可应用于制造装置。然而，随着超大规模集成电路(ULSI)之发展，特征尺寸越来越小，必须降低单晶硅中的氧浓度以避免在装置的有源区中形成缺陷。另外，由于目前集成电路工艺的热预算显著降低，因此无法充分符合于硅片体内形成氧沉淀的条件，从而影响内质吸除的效果。
可通过在直拉单晶硅中掺氮以解决上述问题。氮能够促进直拉单晶硅中的氧沉淀，进而增强内质吸除效果。掺氮亦可提高硅片机械强度，抑制空洞型缺陷。以红外光散射断层扫描法(IR-LST)及扫描红外显微法(SIRM)研究氧沉淀分布情况，研究结果表示，在掺氮浓度合适的300mm掺氮直拉硅片经过一步高温退火后，可形成高密度的氧沉淀，并于硅片近表面处形成一定宽度的洁净区；此外，随着氮浓度的增加，硅片中的氧沉淀径向分布更为均匀。
业界一般是以固相掺氮，例如采用氮化硅(Si3N4)粉末，进行单晶硅掺氮，此法可较精确地控制掺氮浓度，但高纯度氮化硅(Si3N4)粉末难以获得，且常因熔解困难而残留Si3N4颗粒，而难以达成单晶硅的无位错生长。业界亦采用气相掺氮，是在晶种熔接后导入高纯度氮气或氮/氩混合气体，藉由氮气导入时间以控制硅晶体掺氮浓度。气相掺氮是藉由氮气与硅熔体反应而达成掺氮，纯度较高，且反应形成的氮化硅较不易颗粒化，然而，由于完全依靠热对流进行反应，工艺不易控制且掺氮浓度较不均匀。
综上述，对于单晶硅的制造方法仍有其需求。
发明内容
本发明是提供一种单晶硅的生长方法，是以柴氏拉晶法进行，是将置于坩埚内的硅原料熔化而形成熔体，并提拉该熔体而使单晶硅生长的方法；在形成熔体时通入包括氩气气体；以及，在提拉步骤中施加磁场。
本发明并提供一种制备晶圆的方法，包括以本发明方法所制得的单晶硅锭为原料制备该晶圆；该晶圆包含浓度为1×1013至1×1016/立方公分的氮原子。
附图说明
图1表示本发明的单晶硅生长方法的流程。
具体实施方式
本发明的单晶硅的生长方法是以柴氏拉晶法(又称直拉法)为基础，以固相掺氮配合磁场直拉单晶法(magnetic field-Czochralski method，MCZ)进行硅单晶的制备。简言之，柴氏拉晶法为将置于坩埚内的硅原料熔化而形成熔体，并提拉该熔体而使单晶硅生长的方法。本发明中，在形成熔体时通入包括氩气气体；以及，在提拉步骤中施加磁场。
在本发明中，该硅原料包括多晶硅碎块、及表面生长氮化硅的硅片。实施例中，该氮化硅可以采用化学气相沉积法(chemical vapor deposition)或等离子体化学气相沉积法(plasma chemical vapor deposition)生长，且该氮化硅之厚度为20-5000nm。
在本发明中，该磁场的强度为1000至5000高斯(Gauss)。
在实施例中，该磁场为超导体倾斜磁场。具体而言，该磁场的磁力线方向与该熔体液面呈一夹角，且角度为0至45度、或45至90度，可依实际需求调整该夹角之角度。在较佳实施例中，该磁场的磁力线方向与该熔体液面呈0至10度夹角、或80至90度夹角。
本发明的单晶硅生长方法的详细步骤包括：将表面生长氮化硅的硅片及多晶硅碎块共同置于石英坩埚中，以预定温度熔化；施加磁场；进行引晶步骤：采用晶种以预定拉晶速率向上拉晶，至细晶长度达到预定长度时，降低拉晶速率进入放肩步骤；放肩步骤：降低拉晶速率，维持一线性降温速率，使该细晶生长成预定直径的单晶硅锭后，进入转肩等径步骤；以及转肩及等径步骤：待该单晶硅锭直径达预定后，立即提高拉晶速率并及时降温，同时停止该线性降温，控制坩埚上升速率，并根据该单晶硅锭的直径变化率的速度，缓慢调节拉晶速率，使该单晶硅锭的直径维持稳定，并继续生长；待该单晶硅锭直径相对稳定后，以自动等径控工艺序进行监控。
在实施例中，该单晶硅锭的直径是由该拉晶速率和该预定温度所控制。
在实施例中，该硅原料为表现生长有氮化硅薄膜的硅片与多晶硅碎块，该等硅原料是于超过氮化硅熔点温度(即，大于1900℃)下充分混合及熔解。随后降低该熔体温度，进行晶种熔接，此时该熔体表面中心区域的温度即为硅熔点温度，接着可进行固相掺氮拉晶生长。藉此可较精确地控制硅单晶的掺氮浓度以及达成良好之掺氮均匀性。
本发明亦提供一种制备晶圆的方法，包括以如前述方法所制得的单晶硅锭为原料制备该晶圆；其中，该晶圆包含浓度为1×1013至1×1016/立方公分(cubiccentimeter)的氮原子。
在实施例中，是将该单晶硅锭进行切薄、表面磨削、研磨、边缘处理、洗涤等步骤，而形成该晶圆。
实施例
以下将结合示意图对本发明进行更详细的描述，其中表示了本发明的较佳实施例，应理解具本领域通常知识者可以对此处描述之本发明进行修改，而仍然实现本发明的有利效果。因此，下列描述应该被理解为对于本领域技术人员的广泛认知，而并非作为对本发明的限制。
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述众所周知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关***或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于具本领域通常知识者来说仅仅是常规工作。
在下列段落中参照图式以举例方式更具体地描述本发明。根据下面的说明和申请专利范围，本发明的优点和特征将更清楚。需说明的是，图式均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
本发明是采用固相掺氮加磁场直拉单晶法(MCZ)进行硅单晶掺氮。其程序步骤大致包括：熔化、引晶、拉晶、放肩、转肩、等径。参照图1，是说明本发明的单晶硅生长方法的一实施例，包括：
S100：将硅原料置于石英坩埚中，以预定温度熔化，其中该硅原料包括表面生长氮化硅的硅片及多晶硅碎块
S200：施加磁场；
S300：引晶步骤：采用晶种以预定拉晶速率向上拉晶，至细晶达到预定长度；
S400：放肩步骤：降低拉晶速率，维持一线性降温速率，使该细晶生长成预定直径的单晶硅锭；以及
S500：转肩及等径步骤：待该单晶硅锭直径达预定后，立即提高拉晶速率并及时降温，同时停止该线性降温，使该单晶硅锭之直径维持稳定，并继续生长。
本发明的固相掺氮是以表面生长有氮化硅薄膜的硅片作为硅原料，而制备电子级的氮化硅薄膜，可在硅衬底上进行气相沉积获得，例如：在相对高温下进行化学气相沉积(CVD)，或，在温度相对较低的低压条件下进行等离子体辅助化学气相沉积(PECVD)。其反应式如下：
3SiH4(g)+4NH3(g)→Si3N4(s)+12H2(g)
3SiCl4(g)+4NH3(g)→Si3N4(s)+12HCl(g)
3SiCl2H2(g)+4NH3(g)→Si3N4(s)+6HCl(g)+6H2(g)
其中，g表示气态，s表示固态。
藉由CVD或PECVD，可于硅衬底上形成厚度为20-5000nm的氮化硅层。
将上述具有氮化硅薄膜的硅片与多晶硅碎块置于坩埚中，导入氩气，并于1900-2000℃(即高于氮化硅熔点之温度)下进行充分混合熔合，以形成熔体。随后将熔体温度降低，使硅熔体表面中心区域的温度为约1400℃(即硅熔点温度)。
对坩埚及其内的熔体施加磁场，较佳是施加超导体倾斜磁场。该磁场的磁力线方向与该熔体液面呈0至45度夹角、或45至90度夹角；其中，以0至10度夹角、或80至90度夹角为最佳。该磁场强度为1000至5000高斯(Gauss)。
进行晶种熔接，并以预定拉晶速率向上拉晶，待细晶长度达到预定长度时，降低拉晶速率进入放肩步骤；在放肩步骤中降低拉速，维持一个线性降温速率，形成预定直径的单晶硅锭后，进入转肩等径步骤；待单晶硅锭直径生长至预定要求后，迅速向上提升拉晶速率，及时降温，同时停止线性降温，给予坩埚上升速率，根据单晶硅锭直径变化率速度，缓慢调节拉速，待单晶硅锭直径相对稳定后，以自动等径控工艺序监控后续程序。
以本发明的方法，能够较精确地控制单晶硅棒中的掺氮浓度，并达成良好的掺氮均匀性。依据本方法所产生的单晶硅棒或硅芯片中，所含氮原子浓度是在1×1013至1×1016/立方公分的范围内。
对前述所得的氮掺杂单晶硅片进行高温退火(RTA)步骤，可消除该硅片表面层深度为约0.5微米(μm)范围内之晶体原生颗粒(crystal originated particle，COP)缺陷。可将该表面层的COP密度减少至约50％或更少。且所得硅片表面也没有容积微缺陷(bulk micro defect，BMD)。
上述特定实施例之内容是为了详细说明本发明，然而，该等实施例是仅用于说明，并非意欲限制本发明。熟习本领域之技艺者可理解，在不悖离后附申请专利范围所界定之范畴下针对本发明所进行之各种变化或修改是落入本发明之一部分。

Claims (10)

1.一种单晶硅的生长方法，是以柴氏拉晶法，将置于坩埚内的硅原料熔化而形成熔体，并提拉该熔体而使单晶硅生长的方法，其特征在于：
在形成熔体时通入包括氩气气体；以及
在提拉步骤中施加磁场。
2.如权利要求1所述的单晶硅的生长方法，其特征在于，该硅原料包括多晶硅碎块、及表面生长氮化硅的硅片。
3.如权利要求2所述的单晶硅的生长方法，其特征在于，以低压化学气相沉积法或等离子体化学气相沉积法生长氮化硅。
4.如权利要求3所述的单晶硅的生长方法，其特征在于，该氮化硅的厚度为20-5000nm。
5.如权利要求1所述的单晶硅的生长方法，其特征在于，包括下列步骤：
将硅原料置于石英坩埚中，以预定温度熔化，其中该硅原料包括表面生长氮化硅的硅片及多晶硅碎块；
施加磁场；
引晶步骤：采用晶种以预定拉晶速率向上拉晶，至细晶达到预定长度；
放肩步骤：降低拉晶速率，维持一线性降温速率，使该细晶生长成预定直径之单晶硅锭；以及
转肩及等径步骤：待该单晶硅锭直径达预定后，立即提高拉晶速率并及时降温，同时停止该线性降温，使该单晶硅锭的直径维持稳定，并继续生长。
6.如权利要求1或5所述的单晶硅的生长方法，其特征在于，该磁场的强度为1000至5000高斯。
7.如权利要求1或5所述的单晶硅的生长方法，其特征在于，该磁场为超导体倾斜磁场。
8.如权利要求7所述的单晶硅的生长方法，其特征在于，该磁场的磁力线方向与该熔体液面呈一夹角，且角度为0至45度、或45至90度。
9.一种制备晶圆的方法，包括以如权利要求1～6中所述的单晶硅的生长方法，任一项的方法所制得的单晶硅锭为原料制备该晶圆；其特征在于，该晶圆包含浓度为1×1013至1×1016/立方公分的氮原子。
10.如权利要求9所述的单晶硅的生长方法，其特征在于，将该单晶硅锭进行切薄、表面磨削、研磨、边缘处理及洗涤，而形成该晶圆。
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