CN106981522B - 能够提高光电转换效率的perc太阳能电池及其制备方法 - Google Patents

能够提高光电转换效率的perc太阳能电池及其制备方法 Download PDF

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CN106981522B
CN106981522B CN201710122715.8A CN201710122715A CN106981522B CN 106981522 B CN106981522 B CN 106981522B CN 201710122715 A CN201710122715 A CN 201710122715A CN 106981522 B CN106981522 B CN 106981522B
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赖俊文
方结彬
陈刚
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Zhejiang Love Solar Energy Technology Co Ltd
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Abstract

本发明公开了能够提高光电转换效率的PERC太阳能电池及其制备方法，该太阳能电池包括自下而上依次设置的背银电极、铝背场、背面氮化硅膜、背面氧化铝膜、P型硅、N型硅、正面氮化硅膜和正银电极，铝背场通过背铝条与P型硅相连，所述P型硅为电池的硅片，N型硅为在硅片正面扩散形成的N型发射极，所述正面氮化硅膜沉积在硅片正面，所述背面氧化铝膜沉积在所述硅片背面，硅片沉积所述正面氮化硅膜后再沉积所述的背面氧化铝膜，并且在沉积所述背面氧化铝膜前对硅片背面进行清洗。该电池可以显著提升背面氧化铝膜的钝化效果，提高电池的开路电压和短路电流，从而提升电池的光电转换效率。本发明同时公开了该太阳能电池的制备方法。

Description

能够提高光电转换效率的PERC太阳能电池及其制备方法
技术领域
本发明涉及太阳能电池技术领域，具体是指一种能够提高光电转换效率的PERC太阳能电池及其制备方法。
背景技术
晶硅太阳能电池是一种有效吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件，当太阳光照在半导体P～N结上，形成新的空穴～电子对，在P～N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。
传统晶硅太阳能电池基本上只采用正面钝化技术，在硅片正面用PECVD的方式沉积一层氮化硅，降低少子在前表面的复合速率，可以大幅度提升晶硅电池的开路电压和短路电流，从而提升晶硅太阳电池的光电转换效率。
随着对晶硅电池的光电转换效率的要求越来越高，人们开始研究背钝化太阳电池技术。
发明内容
本发明的目的之一是提供能够提高光电转换效率的PERC太阳能电池，该电池可以显著提升背面氧化铝膜的钝化效果，减少电池污染，提高电池的开路电压和短路电流，从而提升电池的光电转换效率。
本发明的这一目的通过如下的技术方案来实现的：能够提高光电转换效率的PERC太阳能电池，其特征在于：所述电池包括自下而上依次设置的背银电极、铝背场、背面氮化硅膜、背面氧化铝膜、P型硅、N型硅、正面氮化硅膜和正银电极，所述太阳能电池在背面还开设有开通所述背面氮化硅膜、背面氧化铝膜后直至P型硅的多条激光开槽区，多条激光开槽区平行设置，每个激光开槽区内均填充有背铝条，所述背铝条与所述的铝背场采用铝浆料一体印刷成型，铝背场通过背铝条与P型硅相连，所述的背银电极、铝背场、背面氮化硅膜、背面氧化铝膜、P型硅、N型硅、正面氮化硅膜和正银电极自下而上依次相连接，所述P型硅为电池的硅片，N型硅为在硅片正面扩散形成的N型发射极，所述正面氮化硅膜沉积在硅片正面，所述背面氧化铝膜沉积在所述硅片背面，硅片沉积所述正面氮化硅膜后再沉积所述的背面氧化铝膜，并且在沉积所述背面氧化铝膜前对硅片背面进行清洗。
本发明的太阳能电池在沉积所述背面氧化铝膜前对硅片背面进行清洗，去除硅片背面的氧化层和脏污，减少电池污染，有利于背面氧化铝膜的沉积，该电池可以显著提升背面氧化铝膜的钝化效果，提高电池的开路电压和短路电流，从而大幅度提升电池的光电转换效率。
作为优选实施例，本发明中，所述正面氮化硅膜的厚度为50～300微米，最优的厚度为60～90微米。
所述背面氮化硅膜的厚度为80～300微米，最优的厚度为100～200微米。
所述背面氧化铝膜的厚度为2～50nm，最优的厚度为5～30nm。
本发明的目的之二是提供上述能够提高光电转换效率的PERC太阳能电池的制备方法。
本发明的这一目的通过如下的技术方案来实现的：上述能够提高光电转换效率的PERC太阳能电池的制备方法，其特征在于，该方法包括如下步骤：
(1)在硅片正面形成绒面，所述硅片为P型硅；
(2)在所述硅片正面进行扩散形成N型硅，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；
(4)在硅片正面沉积正面氮化硅膜；
(5)对硅片背面进行清洗；
(6)在硅片背面沉积背面氧化铝膜；
(7)在硅片背面沉积背面氮化硅膜；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜、背面氧化铝膜后直至硅片，形成多条激光开槽区；
(9)在所述硅片背面印刷背电极浆料，烘干；
(10)在所述硅片背面印刷铝浆料，形成铝背场，在印刷铝背场的同时在激光开槽区内印刷铝浆料，形成背铝条，背铝条与铝背场一体印刷成型，印刷后进行烘干；
(11)在所述硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极、铝背场和正银电极；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本发明步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光。如果步骤3后不进行背面抛光，本发明步骤(5)的清洗步骤可以根据需要调节KOH或NAOH的浓度和清洗时间来实现背抛的功能。
本发明中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
本发明中，所述步骤(5)对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1％～6％，H2O2的质量分数为0.1％～5％，混合溶液的温度为60～99度，放置时间为30～300s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为30～300s；
(53)将硅片放入KOH溶液中，KOH的质量分数为0.3％～18％，温度为60～99度，放置时间为30～300s；
(54)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1％～6％，H2O2的质量分数为0.1％～5％，混合溶液的温度为60～99度，放置时间为30～300s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为30～300s；
(56)将硅片放入HF溶液或者HCL溶液或者HF和HCL的混合溶液中，温度为60～90度，放置时间为5～300s，其中，HF溶液中，HF的质量分数为0.2％～6％，HCL溶液中，HCL的质量分数为0.2％～5％，HF和HCL的混合溶液中，HF的质量分数为0.2％～6％，HCL的质量分数为0.2％～5％；
(57)将硅片放入去离子水中进行漂洗，温度为60～99度，漂洗时间为30～300s，漂洗完成后将硅片提出水面；
(58)对硅片进行烘干。
上述步骤(51)和步骤(54)的目的是清洗硅片的有机杂质或与碱反应后粘附的副产物。步骤(53)的目的是刻蚀硅片背面。
其中，所述步骤(5)中所有的KOH均可以用NaOH替换。
所述步骤(56)放入酸液是为了中和硅片从前面步骤带来的残留碱液、去除金属离子以及去掉硅片背面的氧化层。
所述步骤(57)中，漂洗完成后采用慢提拉技术将硅片提出水面。采用慢提拉技术，即将硅片在热的去离子水中浸泡后，慢慢提出水面，有助于硅片疏水。
本发明的制备方法在正面沉积正面氮化硅膜后，对硅片背面进行清洗，然后取出在背面沉积背面氧化铝膜。由于清洗背面可以去除硅片背面的氧化层和脏污，减少电池污染，有利于背面氧化铝膜的沉积，可以显著提升背面氧化铝膜的钝化效果，提高电池的开路电压和短路电流，从而大幅度提升电池的光电转换效率。并且设备投入成本低，工艺简单，且与目前生产线兼容性好。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明。
图1是本发明能够提高光电转换效率的PERC太阳能电池的整体结构截面图；
图2是本发明能够提高光电转换效率的PERC太阳能电池的制备方法中步骤5的流程框图。
附图标记说明
1、背银电极，2、铝背场，3、背面氮化硅膜，4、背面氧化铝膜，
5、P型硅，6、N型硅，7、正面氮化硅膜，8、正银电极，
9、激光开槽区；10、背铝条。
具体实施方式
实施例一
如图1所示的能够提高光电转换效率的PERC太阳能电池，包括自下而上依次设置的背银电极1、铝背场2、背面氮化硅膜3、背面氧化铝膜4、P型硅5、N型硅6、正面氮化硅膜7和正银电极8，太阳能电池在背面还开设有开通背面氮化硅膜3、背面氧化铝膜4后直至P型硅5的多条激光开槽区9，多条激光开槽区9平行设置，每个激光开槽区9内均填充有背铝条10，背铝条10与铝背场2采用铝浆料一体印刷成型，铝背场2通过背铝条10与P型硅5相连，背银电极1、铝背场2、背面氮化硅膜3、背面氧化铝膜4、P型硅5、N型硅6、正面氮化硅膜7和正银电极8自下而上依次相连接，P型硅5为电池的硅片，N型硅6为在硅片正面扩散形成的N型发射极，正面氮化硅膜7沉积在硅片正面，背面氧化铝膜4沉积在硅片背面，硅片沉积正面氮化硅膜7后再沉积背面氧化铝膜4，并且在沉积背面氧化铝膜4前对硅片背面进行清洗。
本实施例的背面氧化铝膜4的材质为三氧化二铝(Al2O3)，背面氮化硅膜3和正面氮化硅膜7的材质相同，均为氮化硅(Si3N4)。
本实施例中，正面氮化硅膜7的厚度为75微米，背面氮化硅膜3的厚度为150微米，背面氧化铝膜4的厚度为8nm。正面氮化硅膜7的厚度可以在50～300微米内取值，最优的厚度为60～90微米，背面氮化硅膜3的厚度可以在80～300微米内取值，最优的厚度为100～200微米，背面氧化铝膜4的厚度可以在2～50nm内取值，比如为10nm、20nm、30nm、40nm，最优的厚度为5～30nm。
上述能够提高光电转换效率的PERC太阳能电池的制备方法，包括如下步骤：
(1)在硅片正面形成绒面，硅片为P型硅5；
(2)在硅片正面进行扩散形成N型硅6，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光；
(4)在硅片正面沉积正面氮化硅膜7；
(5)对硅片背面进行清洗，如图2所示，对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1％，H2O2的质量分数为0.1％，混合溶液的温度为99度，放置时间为300s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为30s；
(53)将硅片放入KOH溶液中，KOH的质量分数为0.3％，温度为99度，放置时间为300s；
(54)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1，H2O2的质量分数为0.1，混合溶液的温度为99度，放置时间为300s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为30s；
(56)将硅片放入HF溶液，温度为90度，放置时间为300s，HF的质量分数为0.2％；该步骤也可以用HCL溶液来代替HF溶液，此时HCL的质量分数为0.2％，或者用HF和HCL的混合溶液来代替HF溶液，HF和HCL的混合溶液中，HF的质量分数为0.2％，HCL的质量分数为0.2％；
(57)将硅片放入去离子水中进行漂洗，温度为60度，漂洗时间为300s，漂洗完成后采用慢提拉技术将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜4；
(7)在硅片背面沉积背面氮化硅膜3；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜3、背面氧化铝膜4后直至硅片，形成多条激光开槽区9；
(9)在硅片背面印刷背电极浆料，烘干；
(10)在硅片背面印刷铝浆料，形成铝背场2，在印刷铝背场2的同时在激光开槽区9内印刷铝浆料，形成背铝条10，背铝条10与铝背场2一体印刷成型，印刷后进行烘干；
(11)在硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极1、铝背场2和正银电极8；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本实施例中，步骤(5)中所有的KOH均可以用NaOH替换。
本实施例中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
实施例二
本发明能够提高光电转换效率的PERC太阳能电池的实施例二和实施例一不同之处在于，实施例二中，正面氮化硅膜7的厚度为180微米，背面氮化硅膜3的厚度为200微米，背面氧化铝膜4的厚度为9nm。
本实施例的PERC太阳能电池的制备方法，具体包括如下步骤：
(1)在硅片正面形成绒面，硅片为P型硅5；
(2)在硅片正面进行扩散形成N型硅6，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光；(4)在硅片正面沉积正面氮化硅膜7；
(5)对硅片背面进行清洗，如图2所示，对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入NAOH和H2O2的混合溶液中，该混合溶液中NAOH的质量分数为1.5％，H2O2的质量分数为1.3％，混合溶液的温度为90度，放置时间为240s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为240s；
(53)将硅片放入NAOH溶液中，NAOH的质量分数为4.5％，温度为90度，放置时间为240s；
(54)将硅片放入NAOH和H2O2的混合溶液中，该混合溶液中NAOH的质量分数为1.5％，H2O2的质量分数为1.3％，混合溶液的温度为90度，放置时间为250s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为250s；
(56)将硅片放入HF溶液，温度为80度，放置时间为240s，HF的质量分数为1.5％；该步骤也可以用HCL溶液来代替HF溶液，此时HCL的质量分数为1.2％，或者用HF和HCL的混合溶液来代替HF溶液，HF和HCL的混合溶液中，HF的质量分数为1.5％，HCL的质量分数为1.2％；
(57)将硅片放入去离子水中进行漂洗，温度为90度，漂洗时间为250s，漂洗完成后采用慢提拉技术将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜4；
(7)在硅片背面沉积背面氮化硅膜3；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜3、背面氧化铝膜4后直至硅片，形成多条激光开槽区9；
(9)在硅片背面印刷背电极浆料，烘干；
(10)在硅片背面印刷铝浆料，形成铝背场2，在印刷铝背场2的同时在激光开槽区9内印刷铝浆料，形成背铝条10，背铝条10与铝背场2一体印刷成型，印刷后进行烘干；
(11)在硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极1、铝背场2和正银电极8；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本实施例中，步骤(5)中所有的NAOH均可以用KOH替换。
本实施例中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
实施例三
本发明能够提高光电转换效率的PERC太阳能电池的实施例三和实施例一不同之处在于，实施例三中，正面氮化硅膜7的厚度为260微米，背面氮化硅膜3的厚度为250微米，背面氧化铝膜4的厚度为16nm。
本实施例的PERC太阳能电池的制备方法，具体包括如下步骤：
(1)在硅片正面形成绒面，硅片为P型硅5；
(2)在硅片正面进行扩散形成N型硅6，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光；(4)在硅片正面沉积正面氮化硅膜7；
(5)对硅片背面进行清洗，如图2所示，对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为3％，H2O2的质量分数为2.5％，混合溶液的温度为80度，放置时间为150s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为150s；
(53)将硅片放入KOH溶液中，KOH的质量分数为9％，温度为80度，放置时间为160s；
(54)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为3％，H2O2的质量分数为2.5％，混合溶液的温度为82度，放置时间为160s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为150s；
(56)将硅片放入HF溶液，温度为75度，放置时间为150s，HF的质量分数为3％；该步骤也可以用HCL溶液来代替HF溶液，此时HCL的质量分数为2.5％，或者用HF和HCL的混合溶液来代替HF溶液，HF和HCL的混合溶液中，HF的质量分数为3％，HCL的质量分数为2.5％；
(57)将硅片放入去离子水中进行漂洗，温度为80度，漂洗时间为160s，漂洗完成后采用慢提拉技术将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜4；
(7)在硅片背面沉积背面氮化硅膜3；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜3、背面氧化铝膜4后直至硅片，形成多条激光开槽区9；
(9)在硅片背面印刷背电极浆料，烘干；
(10)在硅片背面印刷铝浆料，形成铝背场2，在印刷铝背场2的同时在激光开槽区9内印刷铝浆料，形成背铝条10，背铝条10与铝背场2一体印刷成型，印刷后进行烘干；
(11)在硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极1、铝背场2和正银电极8；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本实施例中，步骤(5)中所有的KOH均可以用NaOH替换。
本实施例中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
实施例四
本发明能够提高光电转换效率的PERC太阳能电池的实施例四和实施例一不同之处在于，实施例四中，正面氮化硅膜7的厚度为300微米，背面氮化硅膜3的厚度为300微米，背面氧化铝膜4的厚度为23nm。
本实施例的PERC太阳能电池的制备方法，具体包括如下步骤：
(1)在硅片正面形成绒面，硅片为P型硅5；
(2)在硅片正面进行扩散形成N型硅6，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光；
(4)在硅片正面沉积正面氮化硅膜7；
(5)对硅片背面进行清洗，如图2所示，对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入NAOH和H2O2的混合溶液中，该混合溶液中NAOH的质量分数为4.5％，H2O2的质量分数为3.8％，混合溶液的温度为70度，放置时间为60s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为100s；
(53)将硅片放入NAOH溶液中，NAOH的质量分数为14％，温度为70度，放置时间为60s；
(54)将硅片放入NAOH和H2O2的混合溶液中，该混合溶液中NAOH的质量分数为4.5％，H2O2的质量分数为3.8％，混合溶液的温度为70度，放置时间为60s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为90s；
(56)将硅片放入HF溶液，温度为70度，放置时间为40s，HF的质量分数为4.5％；该步骤也可以用HCL溶液来代替HF溶液，此时HCL的质量分数为3.8％，或者用HF和HCL的混合溶液来代替HF溶液，HF和HCL的混合溶液中，HF的质量分数为4.5％，HCL的质量分数为3.8％；
(57)将硅片放入去离子水中进行漂洗，温度为65度，漂洗时间为250s，漂洗完成后采用慢提拉技术将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜4；
(7)在硅片背面沉积背面氮化硅膜3；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜3、背面氧化铝膜4后直至硅片，形成多条激光开槽区9；
(9)在硅片背面印刷背电极浆料，烘干；
(10)在硅片背面印刷铝浆料，形成铝背场2，在印刷铝背场2的同时在激光开槽区9内印刷铝浆料，形成背铝条10，背铝条10与铝背场2一体印刷成型，印刷后进行烘干；
(11)在硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极1、铝背场2和正银电极8；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本实施例中，步骤(5)中所有的NAOH均可以用KOH替换。
本实施例中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
实施例五
本发明能够提高光电转换效率的PERC太阳能电池的实施例五和实施例一不同之处在于，实施例五中，正面氮化硅膜7的厚度为80微米，背面氮化硅膜3的厚度为80微米，背面氧化铝膜4的厚度为30nm。
本实施例的PERC太阳能电池的制备方法，具体包括如下步骤：
(1)在硅片正面形成绒面，硅片为P型硅5；
(2)在硅片正面进行扩散形成N型硅6，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；步骤(3)后，根据实际情况决定是否还需要对硅片背面进行抛光；
(4)在硅片正面沉积正面氮化硅膜7；
(5)对硅片背面进行清洗，如图2所示，对硅片背面进行清洗具体包括依次进行的如下步骤：
(51)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为6％，H2O2的质量分数为5％，混合溶液的温度为60度，放置时间为30s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为300s；
(53)将硅片放入KOH溶液中，KOH的质量分数为18％，温度为60度，放置时间为30s；
(54)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为6％，H2O2的质量分数为5％，混合溶液的温度为60度，放置时间为30s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为300s；
(56)将硅片放入HF溶液，温度为90度，放置时间为5s，HF的质量分数为6％；该步骤也可以用HCL溶液来代替HF溶液，此时HCL的质量分数为5％，或者用HF和HCL的混合溶液来代替HF溶液，HF和HCL的混合溶液中，HF的质量分数为6％，HCL的质量分数为5％；
(57)将硅片放入去离子水中进行漂洗，温度为99度，漂洗时间为30s，漂洗完成后采用慢提拉技术将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜4；
(7)在硅片背面沉积背面氮化硅膜3；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜3、背面氧化铝膜4后直至硅片，形成多条激光开槽区9；
(9)在硅片背面印刷背电极浆料，烘干；
(10)在硅片背面印刷铝浆料，形成铝背场2，在印刷铝背场2的同时在激光开槽区9内印刷铝浆料，形成背铝条10，背铝条10与铝背场2一体印刷成型，印刷后进行烘干；
(11)在硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极1、铝背场2和正银电极8；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
本实施例中，步骤(5)中所有的KOH均可以用NaOH替换。
本实施例中的步骤(1)到步骤(8)并非要按照顺序依次进行，本领域的技术人员可以根据实际情况调整各步骤之间的前后顺序。
本发明的上述实施例并不是对本发明保护范围的限定，本发明的实施方式不限于此，凡此种种根据本发明的上述内容，按照本领域的普通技术知识和惯用手段，在不脱离本发明上述基本技术思想前提下，对本发明上述结构做出的其它多种形式的修改、替换或变更，均应落在本发明的保护范围之内。

Claims (7)

1.一种能够提高光电转换效率的PERC太阳能电池，其特征在于：所述电池包括自下而上依次设置的背银电极、铝背场、背面氮化硅膜、背面氧化铝膜、P型硅、N型硅、正面氮化硅膜和正银电极，所述太阳能电池在背面还开设有开通所述背面氮化硅膜、背面氧化铝膜后直至P型硅的多条激光开槽区，多条激光开槽区平行设置，每个激光开槽区内均填充有背铝条，所述背铝条与所述的铝背场采用铝浆料一体印刷成型，铝背场通过背铝条与P型硅相连，所述的背银电极、铝背场、背面氮化硅膜、背面氧化铝膜、P型硅、N型硅、正面氮化硅膜和正银电极自下而上依次相连接，所述P型硅为电池的硅片，N型硅为在硅片正面扩散形成的N型发射极，所述正面氮化硅膜沉积在硅片正面，所述背面氧化铝膜沉积在所述硅片背面，硅片沉积所述正面氮化硅膜后再沉积所述的背面氧化铝膜，并且在沉积所述背面氧化铝膜前对硅片背面进行清洗。
2.如权利要求1所述的能够提高光电转换效率的PERC太阳能电池，其特征在于：所述正面氮化硅膜的厚度为50～300微米。
3.如权利要求1所述的能够提高光电转换效率的PERC太阳能电池，其特征在于：所述背面氮化硅膜的厚度为80～300微米。
4.如权利要求1所述的能够提高光电转换效率的PERC太阳能电池，其特征在于：所述背面氧化铝膜的厚度为2～50nm。
5.如权利要求1至4任一项所述的能够提高光电转换效率的PERC太阳能电池的制备方法，其特征在于，该方法包括如下步骤：
(1)在硅片正面形成绒面，所述硅片为P型硅；
(2)在所述硅片正面进行扩散形成N型硅，即N型发射极；
(3)去除硅片周边的PN结和扩散过程形成的正面磷硅玻璃，并对硅片正面进行臭氧氧化处理；
(4)在硅片正面沉积正面氮化硅膜；
(5)对硅片背面进行清洗，具体包括依次进行的如下步骤：
(51)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1％～6％，H2O2的质量分数为0.1％～5％，混合溶液的温度为60～99摄氏度，放置时间为30～300s；
(52)将硅片放入去离子水中进行漂洗，漂洗时间为30～300s；
(53)将硅片放入KOH溶液中，KOH的质量分数为0.3％～18％，温度为60～99摄氏度，放置时间为30～300s；
(54)将硅片放入KOH和H2O2的混合溶液中，该混合溶液中KOH的质量分数为0.1％～6％，H2O2的质量分数为0.1％～5％，混合溶液的温度为60～99摄氏度，放置时间为30～300s；
(55)将硅片放入去离子水中进行漂洗，漂洗时间为30～300s；
(56)将硅片放入HF溶液或者HCL溶液或者HF和HCL的混合溶液中，温度为60～90摄氏度，放置时间为5～300s，其中，HF溶液中，HF的质量分数为0.2％～6％，HCL溶液中，HCL的质量分数为0.2％～5％，HF和HCL的混合溶液中，HF的质量分数为0.2％～6％，HCL的质量分数为0.2％～5％；
(57)将硅片放入去离子水中进行漂洗，温度为60～99摄氏度，漂洗时间为30～300s，漂洗完成后将硅片提出水面；
(58)对硅片进行烘干；
(6)在硅片背面沉积背面氧化铝膜；
(7)在硅片背面沉积背面氮化硅膜；
(8)对硅片背面进行激光开槽，开通背面氮化硅膜、背面氧化铝膜后直至硅片，形成多条激光开槽区；
(9)在所述硅片背面印刷背电极浆料，烘干；
(10)在所述硅片背面印刷铝浆料，形成铝背场，在印刷铝背场的同时在激光开槽区内印刷铝浆料，形成背铝条，背铝条与铝背场一体印刷成型，印刷后进行烘干；
(11)在所述硅片正面印刷正电极浆料，烘干；
(12)对硅片进行高温烧结，形成背银电极、铝背场和正银电极；
(13)对硅片进行抗LID退火处理，形成太阳能电池。
6.如权利要求5所述的制备方法，其特征在于：所述步骤(5)中所有的KOH均用NaOH替换。
7.如权利要求5所述的制备方法，其特征在于：所述步骤(57)中，漂洗完成后采用慢提拉技术将硅片提出水面。
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