CN111771271A - 监测室漂移的方法 - Google Patents
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Abstract
提供了一种用于监测等离子体处理室中的漂移以进行半导体处理的方法。提供多个循环,其中每个循环包括在等离子体处理室中的卡盘上方沉积沉积层,等离子体蚀刻所述沉积层以及测量用于等离子体蚀刻所述沉积层以蚀刻穿过所述沉积层的时间。所测得的用于等离子体蚀刻的时间用于确定等离子体处理室的漂移。
Description
相关申请的交叉引用
本申请要求于2018年2月27日提交的美国申请No.15/906,332的优先权,其通过引用并入本文以用于所有目的。
技术领域
本公开涉及半导体器件的形成。更具体地,本公开涉及在用于沉积和蚀刻层的等离子体处理室中形成半导体器件。
背景技术
在半导体处理中,可以对空白晶片进行处理,然后将其从室中取出以使用计量工具进行测量,从而确定该室的状况和性能。
发明内容
为了实现前述目的并且根据本公开的目的,提供了一种用于监测等离子体处理室中的漂移以进行半导体处理的方法。提供多个循环,其中每个循环包括在等离子体处理室中的卡盘上方沉积沉积层,等离子体蚀刻所述沉积层以及测量用于等离子体蚀刻所述沉积层以蚀刻穿过所述沉积层的时间。所测得的用于等离子体蚀刻的时间用于确定等离子体处理室的漂移(drift)。
本公开的这些特征和其它特征将在下面在本公开内容的详细描述中并结合以下附图进行更详细的描述。
附图说明
在附图中以示例而非限制的方式示出了本公开,并且附图中类似的附图标记表示相似的元件,其中:
图1是一个实施方案的高级流程图。
图2是可以在一个实施方案中使用的等离子体处理室的示意图。
图3是可以用于实施一个实施方案的计算机***的示意图。
图4A-B是根据一个实施方案处理的ESC的一部分的截面图。
图5A-B是根据另一实施方案处理的堆叠件的一部分的截面图。
具体实施方式
现在将参考附图中所示的几个优选实施方案来详细描述本公开。在下面的描述中,阐述了许多具体细节以便提供对本公开的彻底理解。然而,对于本领域技术人员显而易见的是,本公开可以在没有这些具体细节中的一些或全部的情况下实施。在其他情况下,未详细描述公知的工艺步骤和/或结构,以免不必要地使本公开不清楚。
集成电路制造商监测工具参数,例如沉积和蚀刻速率,以维持对成品率的控制。通过沉积材料并且然后在沉积室以外的位置测量沉积的厚度或某些其他参数来收集沉积速率,以使用计量工具确定厚度。蚀刻速率是通过将预先沉积的、具有已知的(由计量工具测得的)厚度的晶片加载到蚀刻模块中来确定的。然后蚀刻晶片,并用计量工具进行异位测量,以确定去除的材料量。使用这样的测试晶片来监测晶片增加了成本,并且降低了工厂中工具的利用率。加强监测可以帮助更快地发现工具问题,从而导致产品损失减少。但是监测的增加也意味着更少的产品运行时间。此外,还有使用测试晶片来监测工具的成本。晶片厂(fab)需要购买或花费时间在沉积工具上来为蚀刻工具创建测试晶片。沉积工具需要放弃运行空间或工具时间来运行沉积监测。维持用于重新使用晶片的再生循环的成本也很高。
如果工厂可以监测工具性能参数,例如流率、功率、压力等,并将它们与蚀刻速率和沉积速率相关联,则这为工厂提供了一种在不总是运行监测测试晶片的情况下监测工具健康的措施。缺点是沉积速率和蚀刻速率未知。结果,通过工具性能参数未检测到由于室调节而导致的沉积速率和蚀刻速率的飘移、工具的闲置时间、污染。
为了便于理解,图1是一个实施方案的高阶流程图。沉积沉积层(步骤104)。等离子体蚀刻蚀刻沉积层(步骤108)。测量用于蚀刻沉积层的时间(步骤112)。步骤104至112可以重复一次或多次(步骤116)。所测得的时间用于确定等离子体处理室的漂移(步骤120)。步骤104至120可以重复一次或多次(步骤124)。当确定等离子体处理室已经漂移太远时,对等离子体处理室进行调节(步骤128)。
实施例
图2是可以在一个实施方案中使用的等离子体处理室的示意图。在一个或多个实施方案中,等离子体处理室200包括在由室壁252包围的室249内的提供气体入口的气体分配板206和静电卡盘(ESC)208。在室249内,将晶片203定位在ESC 208上方,ESC 208是基板支撑件。边缘环209围绕ESC208。ESC源248可向ESC 208提供偏置。气体源210通过气体分配板206连接至室249。ESC温度控制器250连接至ESC 208。射频(RF)源230向下电极和/或上电极提供RF功率,下电极和/或上电极在该实施方案中为ESC 208和气体分配板206。在示例性实施方案中,400kHz电源、60MHz电源以及可选的2MHz电源、27MHz电源构成RF源230和ESC源248。在该实施方案中,上电极接地。在该实施方案中,针对每种频率提供一个发生器。在其他实施方案中,发生器可以在单独的RF源中,或者单独的RF发生器可以连接到不同的电极。例如,上电极可以具有连接到不同RF源的内电极和外电极。在其他实施方案中可以使用RF源和电极的其它布置。光学检测器光学连接到室249。控制器235可控地连接到RF源230、ESC源248、排放泵220、光学检测器240和气体源210。这种室的一个示例是由Lam ResearchCorporation(Fremont,CA)制造的StrikerTM Oxide***。
图3是示出适用于实现在实施方案中使用的控制器235的计算机***300的高级框图。计算机***可以具有从集成电路、印刷电路板和小型手持设备到超大型计算机的许多物理形式。计算机***300包括一个或多个处理器302,并且还可以包括电子显示设备304(用于显示图形、文本和其他数据)、主存储器306(例如随机存取存储器(RAM))、存储设备308(例如,硬盘驱动器)、可移动存储设备310(例如,光盘驱动器)、用户界面设备312(例如,键盘、触摸屏、小键盘、鼠标或其他指点设备等)和通信接口314(例如,无线网络接口)。通信接口314允许通过链路在计算机***300和外部设备之间传送软件和数据。***还可以包括与上述设备/模块连接的通信基础设施316(例如,通信总线、交叉连接杆或网络)。
经由通信接口314传送的信息可以是例如电子信号、电磁信号、光学信号之类的信号形式或能够经由通信链路由通信接口314接收的其它信号,通信链路携带信号并可以使用导线或电缆、光纤、电话线、蜂窝电话链路、射频链路和/或其他通信信道实现。利用这样的通信接口,可以预期一个或多个处理器302可以在执行上述方法步骤的过程中从网络接收信息,或者可以向网络输出信息。此外,方法实施方案可以仅在处理器上执行,或者可以通过诸如因特网之类的网络与共享处理的一部分的远程处理器一起执行。
术语“非瞬态计算机可读介质”通常用于指代介质,诸如主存储器、辅助存储器、可移动存储设备、和存储设备,诸如硬盘、闪存存储器、磁盘驱动存储器、CD-ROM以及其他形式的持久性存储器,并且不应当被解释为涵盖瞬态标的物,如载波或信号。计算机代码的示例包括机器代码(诸如由编译器产生的)和含有由计算机使用解释器执行的较高级代码的文档。计算机可读介质也可以是由包含在载波中的计算机数据信号发送的并且代表能由处理器执行的指令序列的计算机代码。
在一实施方案中,沉积层沉积在卡盘上(步骤104)。在该示例中,在等离子体处理室200中没有晶片的情况下完成沉积。在该示例中,沉积的层是氧化硅。用于沉积氧化硅的示例配方可以首先提供含硅前体,例如聚硅烷(H3Si-(SiH2)n-SiH3),其中n≥0,硅烷(SiH4),乙硅烷(Si2H6)和有机硅烷,例如甲基硅烷、乙基硅烷、异丙基硅烷、叔丁基硅烷、二甲基硅烷、二乙基硅烷、二叔丁基硅烷、烯丙基硅烷、仲丁基硅烷、叔己基硅烷、异戊基硅烷、叔丁基二硅烷、二叔丁基二硅烷等。可以提供含硅前体以沉积含硅层。氧化剂也流入等离子体处理室200。氧化剂可以包含氧气、水、二氧化碳、一氧化二氮或一氧化碳中的一种或多种。在一些实施方案中,含硅前体和氧化剂可以同时流动。在其他实施方案中,含硅前体和氧化剂可以顺序流动。图4A是ESC 208的一部分的截面图,其中沉积层404已经直接沉积在ESC 208的顶表面上。在其他实施方案中,其他层可以在ESC 208和沉积层404之间,其中晶片不在ESC208和沉积层404之间。
对沉积层进行等离子体蚀刻(步骤108)。用于蚀刻氧化硅沉积层的蚀刻配方的示例向等离子体处理室200中提供了包含含卤素成分的蚀刻剂气体。含卤素成分可以包含含氟成分,诸如三氟化氮(NF3)、氟仿(CHF3)、八氟环丁烷(C4F8)和四氟甲烷(CF4)中的一种或多种。蚀刻剂气体在等离子体处理室200中形成为原位等离子体,其蚀刻氧化硅沉积层。当检测到终点时,蚀刻停止。这可以通过停止蚀刻剂气体的流动或通过停止给等离子体通电的RF功率来完成。
测量用于等离子体蚀刻沉积层的时间(步骤112)。在该示例中,光学检测器240使用光学发射光谱法(OES)来测量光学发射光谱,以确定沉积层已经被蚀刻穿过的时间。可以使用光发射光谱法来检测来自被蚀刻的氧化硅的物质的浓度何时降低或来自氧化硅下方的层的物质的浓度何时增加。在一些实施方案中,氮化硅层可以在ESC 208的表面和氧化硅沉积层之间。在这样的实施方案中,来自氮化硅层的物质的存在可以用于指示已经蚀刻穿过氧化硅沉积层。当检测到终点时,蚀刻停止。这可以通过停止蚀刻剂气体的流动或通过停止给等离子体通电的RF功率来完成。图4B是在已经蚀刻了沉积层之后的ESC 208的一部分的截面图。
沉积沉积层(步骤104)、等离子体蚀刻沉积层(步骤108)和测量用于等离子体蚀刻的时间(步骤112)可以循环重复一次或多次(步骤116)。所测得的时间用于确定等离子体处理室的漂移(步骤120)。在该实施方案中,在每个循环之后,将所测得的时间与基准时间进行比较。如果所测得的时间距基准时间不在阈值距离之外,则重复步骤104至步骤120(步骤124)。如果所测得的时间距基准时间在阈值距离之外,从而指示阈值等离子体漂移,则可以升起标记以指示需要对等离子体处理室进行调节。在这种情况下,对等离子体处理室进行调节(步骤128),例如清洗,以便获得距基准时间在阈值距离内的蚀刻时间。其他实施方案可提供调节,其清洁等离子体处理室200,然后将层沉积在等离子体处理室200的内部的一部分上。在每个循环之间,可处理一个或多个生产晶片。
在另一实施方案中,在步骤104到步骤116的多个循环之后,将多个所测得的时间相对于该循环的关系绘制成曲线图,其中该曲线图用于确定等离子体处理室的漂移(步骤120)。如果该曲线图未指示等离子体处理室需要调节,则重复步骤104至步骤120(步骤124)。该曲线图可能显示蚀刻时间的突然变化。这样的突然变化会指示等离子体处理室部件的故障。可以修理该室。蚀刻时间的逐渐变化可能表示在等离子体处理室中沉积物的堆积,在特定点上可能需要清洁该沉积物。该曲线图的形状可用于指示清洁的类型和所需清洁的位置。在调节室之后(步骤128),可以处理晶片。
该实施方案允许测量等离子体处理室的状况,同时使停机时间和生产晶片缺陷的组合最小化。可以快速确定等离子体处理室的状况,从而减少或消除了对要通过计量装置异地检查的测试晶片的需要和等待时间。另外,由于不使用测试晶片,因此消除了加载和卸载测试晶片所需的时间。另外,消除了制备这种测试晶片的成本。
在另一实施方案中,在卡盘上沉积沉积层(步骤104)。在该示例中,在等离子体处理室200中利用生产晶片来进行沉积。在该示例中,所沉积的层是在氧化硅层上方的氮化硅。图5A是堆叠件500的一部分的截面图,其中,衬底504在氧化硅层508下方,氧化硅层508上已经沉积了氮化硅层512。在该示例中,具有侧壁的蚀刻特征516形成在氧化硅层508中。蚀刻特征516可以是槽或孔洞或某种其他类型的孔。氮化硅层512沉积在蚀刻特征516的侧壁上和堆叠件的水平表面上。在处理生产晶片时,处理的一部分将是蚀刻掉在水平表面上形成的氮化硅层512,仅留下沉积在侧壁上的氮化硅。在其他实施方案中,一个或多个层可以在衬底504和氮化硅层512之间。在其他实施方案中,可以使用其他材料的其他层代替氮化硅层512,只要沉积层的蚀刻的终点可以在蚀刻处理期间确定即可。
对沉积层进行等离子体蚀刻(步骤108)。图5B是在已经蚀刻了沉积层512之后的堆叠件500的一部分的截面图。水平表面上的氮化硅层512的部分已被蚀刻掉,而竖直侧壁的至少一部分保留。
测量用于等离子体蚀刻所述沉积层的时间(步骤112)。在该示例中,光学检测器240用于OES,以确定沉积层已经被蚀刻穿过的时间。OES可用于检测来自被蚀刻的氮化硅的物质的浓度何时减小或来自氧化硅的物质的浓度何时增大。
沉积沉积层(步骤104)、等离子体蚀刻沉积层(步骤108)和测量用于等离子体蚀刻的时间(步骤112)可以循环重复一次或多次(步骤116)。对于每个循环,都将生产晶片取出,并提供新的生产晶片。所测得的时间用于确定等离子体处理室的漂移(步骤120)。在一实施方案中,在步骤104至步骤116的多个循环之后,将多个所测得的时间绘制成曲线图,其中该曲线图用于确定等离子体处理室的漂移(步骤120)。如果该曲线图未指示等离子体处理室需要调节,则重复步骤104至步骤120(步骤124)。该曲线图可能显示蚀刻时间的突然变化。这样的突然变化可以指示等离子体处理室部件的故障。可以修理该室。蚀刻时间的逐渐变化可能指示在等离子体处理室中沉积物的堆积,在特定点可能需要清洁该沉积物。曲线图的形状可用于指示清洁的类型和所需清洁的位置。在调节室之后(步骤128),可以处理另外的生产晶片。
各种实施方案通过减少或消除对在计量工具上的非原位测量的需要,同时使用原位处理更频繁地测量室性能,使产量增加,而有缺陷的生产晶片减少。通过更频繁地测量性能,更快地检测到问题,从而减少了有缺陷的晶片数量。一些实施方案不需要测试晶片,从而减少了成本和测试时间。一些实施方案能够测量处理参数的变化如何影响室性能。在另一实施方案中,目标沉积厚度可以是某个配方中的目标,使得可以在等离子体处理室中使用实施方案,以便确定用于获得沉积目标厚度的配方。
各种实施方案可以使用不同的处理来确定何时蚀刻穿过沉积层。在一个实施方案中,将使用光发射光谱法。在另一个实施方案中,将使用激光干涉法。
虽然已经根据几个优选实施方案描述了本公开,但是存在落在本公开的范围内的改变、修改、置换和各种替代等同方案。还应当注意,存在实现本公开的方法和装置的许多替代方式。因此,以下所附权利要求旨在被解释为包括落在本公开的真实精神和范围内的所有这样的改变、修改、置换和各种替代等同方案。
Claims (15)
1.一种用于监测等离子体处理室中的漂移以进行半导体处理的方法,其包括:
多个循环,其中每个循环包括:
在所述等离子体处理室中的卡盘上沉积沉积层;
等离子体蚀刻所述沉积层;以及
测量用于等离子体蚀刻所述沉积层以蚀刻穿过所述沉积层的时间;以及
使用所测得的用于等离子体蚀刻的时间以确定等离子体处理室的漂移。
2.根据权利要求1所述的方法,其中,所述测量用于等离子体蚀刻所述沉积层的所述时间使用光发射光谱法或激光干涉法中的至少一种。
3.根据权利要求1所述的方法,其中,所述使用所测得的用于等离子体蚀刻的时间包括将所测得的用于等离子体蚀刻的时间与基准时间进行比较,确定所测得的用于等离子体蚀刻的时间距所述基准时间是否在阈值距离之外。
4.根据权利要求1所述的方法,其中,所述使用所测得的用于等离子体蚀刻的时间包括产生用于等离子体蚀刻的时间相对于所述多个循环中的每个循环的曲线图。
5.根据权利要求4所述的方法,其还包括使用所述曲线图确定室的状况。
6.根据权利要求4所述的方法,其还包括使用所述曲线图来确定所述等离子体处理室是否需要维修。
7.根据权利要求1所述的方法,其中,在没有晶片的情况下执行所述沉积所述沉积层,并且其中,所述沉积所述沉积层直接在所述卡盘的表面上沉积所述沉积层。
8.根据权利要求7所述的方法,其中在所述多个循环中的每个循环之间处理至少一个生产晶片。
9.根据权利要求1所述的方法,其中,所述沉积所述沉积层是用生产晶片执行的,其中,所述沉积所述沉积层将所述沉积层沉积在所述卡盘上方的所述生产晶片上。
10.根据权利要求9所述的方法,其中所述沉积层沉积在所述生产晶片上的堆叠件上,其中所述堆叠件具有带有侧壁的至少一个特征,其中所述沉积层沉积在所述至少一个特征的侧壁和所述堆叠件的水平表面上。
11.根据权利要求10所述的方法,其中,所述等离子体蚀刻将沉积在所述堆叠件的水平表面上的所述沉积层蚀刻掉,并留下沉积在所述至少一个特征的侧壁上的所述沉积层中的至少一些。
12.根据权利要求1所述的方法,其中,所述使用所测得的用于等离子体蚀刻的时间以确定等离子体处理室的漂移包括:使用所测得的用于等离子体蚀刻的时间来确定何时清洁所述等离子体处理室。
13.根据权利要求1所述的方法,还包括:当确定阈值等离子体漂移时,清洁所述等离子体处理室。
14.根据权利要求1所述的方法,其中,所述等离子体蚀刻所述沉积层包括:
使包含含卤素组分的蚀刻剂气体流入所述等离子体处理室;以及
在所述等离子体处理室中使所述蚀刻剂气体形成为等离子体。
15.根据权利要求1所述的方法,其还包括:当确定漂移超过阈值时,调节所述等离子体处理室。
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Application Number | Priority Date | Filing Date | Title |
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US15/906,332 US10636686B2 (en) | 2018-02-27 | 2018-02-27 | Method monitoring chamber drift |
US15/906,332 | 2018-02-27 | ||
PCT/US2019/018918 WO2019168733A1 (en) | 2018-02-27 | 2019-02-21 | Method monitoring chamber drift |
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US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
WO2019152528A1 (en) | 2018-01-31 | 2019-08-08 | Lam Research Corporation | Electrostatic chuck (esc) pedestal voltage isolation |
US11086233B2 (en) * | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
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- 2019-02-21 KR KR1020207027881A patent/KR20200117041A/ko not_active Application Discontinuation
- 2019-02-21 CN CN201980015547.XA patent/CN111771271A/zh active Pending
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US20190267268A1 (en) | 2019-08-29 |
KR20200117041A (ko) | 2020-10-13 |
US10636686B2 (en) | 2020-04-28 |
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