CN106498495A - 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 - Google Patents
一种真空区熔硅单晶生长用加热线圈的表面预处理方法 Download PDFInfo
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- CN106498495A CN106498495A CN201610941175.1A CN201610941175A CN106498495A CN 106498495 A CN106498495 A CN 106498495A CN 201610941175 A CN201610941175 A CN 201610941175A CN 106498495 A CN106498495 A CN 106498495A
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- Prior art keywords
- silicon
- coil
- coil surface
- melting
- vacuum
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Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 238000004857 zone melting Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000010438 heat treatment Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 238000005488 sandblasting Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 238000002604 ultrasonography Methods 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 230000007423 decrease Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 241001149930 Protura <class> Species 0.000 claims description 3
- 239000006004 Quartz sand Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 239000011856 silicon-based particle Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610941175.1A CN106498495B (zh) | 2016-11-02 | 2016-11-02 | 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 |
Applications Claiming Priority (1)
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CN201610941175.1A CN106498495B (zh) | 2016-11-02 | 2016-11-02 | 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 |
Publications (2)
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CN106498495A true CN106498495A (zh) | 2017-03-15 |
CN106498495B CN106498495B (zh) | 2018-09-11 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109023506A (zh) * | 2018-06-29 | 2018-12-18 | 天津中环领先材料技术有限公司 | 一种降低区熔单晶碳含量的预热装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005060391A1 (de) * | 2004-12-17 | 2006-06-22 | Shin-Etsu Handotai Co., Ltd. | Ein Apparat zur Herstellung eines Einkristalls und ein Verfahren zur Herstellung eines Einkristalls |
US20090158996A1 (en) * | 2007-12-25 | 2009-06-25 | Mitsubishi Materials Corporation | Apparatus for producing single crystal silicon |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
CN102304757A (zh) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸p型太阳能硅单晶的方法 |
JP2012101980A (ja) * | 2010-11-10 | 2012-05-31 | Sumco Techxiv株式会社 | シリコン単結晶製造装置、シリコン単結晶の製造方法及び誘導加熱コイルの加工方法 |
CN103866376A (zh) * | 2012-12-13 | 2014-06-18 | 有研半导体材料股份有限公司 | 一种拉制直径80mm高电阻率区熔单晶硅的工艺方法 |
-
2016
- 2016-11-02 CN CN201610941175.1A patent/CN106498495B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005060391A1 (de) * | 2004-12-17 | 2006-06-22 | Shin-Etsu Handotai Co., Ltd. | Ein Apparat zur Herstellung eines Einkristalls und ein Verfahren zur Herstellung eines Einkristalls |
US20090158996A1 (en) * | 2007-12-25 | 2009-06-25 | Mitsubishi Materials Corporation | Apparatus for producing single crystal silicon |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
JP2012101980A (ja) * | 2010-11-10 | 2012-05-31 | Sumco Techxiv株式会社 | シリコン単結晶製造装置、シリコン単結晶の製造方法及び誘導加熱コイルの加工方法 |
CN102304757A (zh) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸p型太阳能硅单晶的方法 |
CN103866376A (zh) * | 2012-12-13 | 2014-06-18 | 有研半导体材料股份有限公司 | 一种拉制直径80mm高电阻率区熔单晶硅的工艺方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109023506A (zh) * | 2018-06-29 | 2018-12-18 | 天津中环领先材料技术有限公司 | 一种降低区熔单晶碳含量的预热装置 |
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CN106498495B (zh) | 2018-09-11 |
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Application publication date: 20170315 Assignee: CLP Jinghua (Tianjin) semiconductor materials Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.46 Research Institute Contract record no.: X2024980004262 Denomination of invention: A Surface Pretreatment Method for Heating Coils for Vacuum Zone Melting Silicon Single Crystal Growth Granted publication date: 20180911 License type: Common License Record date: 20240415 |