CN103866376A - 一种拉制直径80mm高电阻率区熔单晶硅的工艺方法 - Google Patents
一种拉制直径80mm高电阻率区熔单晶硅的工艺方法 Download PDFInfo
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- CN103866376A CN103866376A CN201210539425.0A CN201210539425A CN103866376A CN 103866376 A CN103866376 A CN 103866376A CN 201210539425 A CN201210539425 A CN 201210539425A CN 103866376 A CN103866376 A CN 103866376A
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106498495A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 |
WO2017070827A1 (zh) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及*** |
CN106702473A (zh) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | 一种区熔硅单晶生长中预防多晶出刺的工艺 |
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2012
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US20090309069A1 (en) * | 2006-09-29 | 2009-12-17 | Shinji Togawa | Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program |
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Non-Patent Citations (1)
Title |
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辛荣生等: "ø76.2mm区熔<100>单晶硅的研制", 《稀有金属》, no. 4, 29 August 1991 (1991-08-29), pages 255 - 259 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106702473A (zh) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | 一种区熔硅单晶生长中预防多晶出刺的工艺 |
CN106702473B (zh) * | 2015-07-20 | 2019-05-21 | 有研半导体材料有限公司 | 一种区熔硅单晶生长中预防多晶出刺的工艺 |
WO2017070827A1 (zh) * | 2015-10-26 | 2017-05-04 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及*** |
CN107002276A (zh) * | 2015-10-26 | 2017-08-01 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及*** |
CN107002276B (zh) * | 2015-10-26 | 2020-03-20 | 北京京运通科技股份有限公司 | 区熔晶体的自动生长方法及*** |
CN106498495A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 |
CN106498495B (zh) * | 2016-11-02 | 2018-09-11 | 中国电子科技集团公司第四十六研究所 | 一种真空区熔硅单晶生长用加热线圈的表面预处理方法 |
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