CN106449915A - Growth method for light-emitting diode epitaxial wafer - Google Patents
Growth method for light-emitting diode epitaxial wafer Download PDFInfo
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The invention discloses a growth method for a light-emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The growth method comprises the steps of enabling a low-temperature buffer layer, a high-temperature buffer layer, an N type layer, an MQW layer and a P type layer to be grown on a substrate in sequence, wherein the MQW layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are laminated alternately; the quantum well layer comprises a first type quantum well, a second type quantum well, and a third type quantum well; the growth temperature of the quantum well layers in the first type quantum well is lowered layer by layer; the In content of the quantum well layers in the second type quantum well is changed layer by layer; the ratio of the In content to Ga content in the quantum well layers in the third type quantum well is decreased layer by layer; and the quantum well layers belong to the first type quantum well, the second type quantum well layer and the third type quantum well in the growth direction of the light-emitting diode epitaxial wafer in sequence. By adoption of the growth method, the overlapping degree of an electron wave function and a hole wave function can be effectively improved, and the light emitting efficiency of the LED is finally improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of growing method of LED epitaxial slice.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) it is the semi-conductor electricity that a kind of energy lights
Subcomponent.As a kind of efficiently, environmental protection, green New Solid lighting source, LED is widely used in rapidly traffic signal
Lamp, automobile interior exterior lamp, landscape light in city, cell phone back light source etc..
The epitaxial wafer of existing LED includes substrate and is sequentially laminated on low temperature buffer layer on substrate, high temperature buffer layer, N
Type layer, MQW (English：Multiple Quantum Well, referred to as：MQW) layer, P-type layer.Wherein, mqw layer includes replacing
The quantum well layer of stacking and quantum barrier layer, the growth conditionss of each quantum well layer are identical, the growth conditionss phase of each quantum barrier layer
With.
During realizing the present invention, inventor finds that prior art at least has problems with：
The polarity effect of mqw layer can produce electric field in quantum well layer, enable band run-off the straight, change sub-band energy level and bundle
Tie up state wave function, cause transition energy to change with intensity.Electric field makes electronics separate with vacant spaces, decreases electron waves
Function is overlapping with hole wave functions, reduces the radiation recombination efficiency in electronics and hole, greatly reduces the luminous effect of LED
Rate.
Content of the invention
In order to solve problem of the prior art, embodiments provide a kind of growth side of LED epitaxial slice
Method.Described technical scheme is as follows：
Embodiments provide a kind of growing method of LED epitaxial slice, described growing method includes：
Successively in Grown low temperature buffer layer, high temperature buffer layer, N-type layer, mqw layer, P-type layer, described mqw layer includes
Alternately laminated InGaN quantum well layer and GaN quantum barrier layer；
Described quantum well layer is divided into first kind SQW, Equations of The Second Kind SQW, three kinds of the 3rd class SQW, the described first kind
SQW, described Equations of The Second Kind SQW, described 3rd class SQW all include the adjacent described quantum well layer of at least two-layer, described
The growth temperature of the described quantum well layer in first kind SQW successively drops along the direction of growth of described LED epitaxial slice
Low, the In content of the described quantum well layer in described Equations of The Second Kind SQW along described LED epitaxial slice the direction of growth by
Layer change, the In content of described quantum well layer in described 3rd class SQW and the ratio of Ga content are along described light emitting diode
The direction of growth of epitaxial wafer successively reduces, all described quantum well layers along described LED epitaxial slice the direction of growth successively
Belong to described first kind SQW, described Equations of The Second Kind SQW, described 3rd class SQW.
Alternatively, the number of plies of described quantum well layer is at least 12 layers, and the number of plies of described quantum barrier layer is at least 12 layers.
Preferably, the number of plies of described quantum well layer is 12～16 layers, and the number of plies of described quantum barrier layer is 12～16 layers.
Alternatively, described quantum barrier layer is divided into that first kind quantum is built and Equations of The Second Kind quantum is built, described first kind quantum build and
Described Equations of The Second Kind quantum barrier layer all includes quantum barrier layer described at least one of which, the described quantum barrier layer in described first kind quantum base
Zone line growth temperature be higher than two side areas growth temperature, described first kind quantum build in described quantum barrier layer
The growth rate of zone line is higher than the growth rate of two side areas, the life of the described quantum barrier layer in described Equations of The Second Kind quantum base
Long temperature keeps constant, and the growth rate of the described quantum barrier layer in described Equations of The Second Kind quantum base keeps constant, all described amounts
Partly described quantum barrier layer in sub- barrier layer belongs to described first kind quantum and builds, and remaining described quantum barrier layer belongs to described second
Class quantum is built.
Preferably, in all described quantum barrier layers, at least half of described quantum barrier layer belongs to described first kind quantum base.
Preferably, the growth temperature of the two side areas of described quantum barrier layer during described first kind quantum is built is higher than described amount
The maximum growth temperature of sub- well layer.
Preferably, the growth rate of the two side areas of described quantum barrier layer during described first kind quantum is built is higher than described amount
The fastest growth rate of sub- well layer.
Alternatively, described P-type layer includes electronic barrier layer and hole provides layer, and described electronic barrier layer is doping Mg
AlyGa1-yN shell, 0.15≤y≤0.25, it is doping higher than the GaN layer setting concentration Mg that described hole provides layer.
Alternatively, described N-type layer is doping higher than the GaN layer setting concentration Si.
Alternatively, described growing method also includes：
Pretreatment is carried out to substrate.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By growing growth temperature along the amount that successively reduces of the direction of growth of LED epitaxial slice close to N-type layer section
Sub- well layer, makes In be distributed from less to more, is conducive to the Stress Release of InGaN and GaN；Close to P-type layer section growth In content and
The ratio of Ga content, along the quantum well layer that successively reduces of the direction of growth of LED epitaxial slice, makes In gradually reduce, InGaN
Stress and GaN between is released；Both can act as reducing the effect of polarity effect, and then reduces the distortion journey of well layer
Degree, improves the overlapping degree of electron wave function and hole wave functions, effectively improves the radiation in SQW of electronics and hole multiple
Close efficiency.And the growth temperature of the zone line of quantum barrier layer in first kind quantum base is higher than the growth temperature of two side areas
Degree, that is, lower close to the temperature of well layer, quantum well layer can be protected, reduce the precipitation to its During barrier layer high temperature, simultaneously middle
The barrier layer of high temperature both can improve crystal mass, and also well layer will not be caused with very big destruction.Quantum in first kind quantum base
The growth rate of the zone line of barrier layer is higher than the growth rate of two side areas, and that is, the speed of growth close to well layer is less than high temperature section
The growth rate of barrier layer, that is, the growth rate of high temperature section is high, so can reduce the destruction to well layer for the high temperature section, quantum barrier layer
Finally improve the luminous efficiency of LED with the fit structure of quantum well layer.
Brief description
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, will make to required in embodiment description below
Accompanying drawing be briefly described it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of flow chart of the growing method of LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is the structural representation of mqw layer provided in an embodiment of the present invention.
Specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment
Embodiments provide a kind of growing method of LED epitaxial slice, in the present embodiment, adopt
Veeco K465i or C4 metallo-organic compound chemical gaseous phase deposition (English：Metal Organic Chemical Vapor
Deposition, referred to as：MOCVD) equipment realizes the growing method of LED.Using high-purity hydrogen (H2) or high pure nitrogen
(N2) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N source, trimethyl gallium (TMGa) and triethyl-gallium
(TEGa) as gallium source, as indium source, silane (SiH4) is as N type dopant, trimethyl aluminium (TMAl) for trimethyl indium (TMIn)
As silicon source, two luxuriant magnesium (CP2Mg) as P-type dopant.Chamber pressure controls in 100～600torr.
Referring to Fig. 1, this growing method includes：
Step 201：Pretreatment is carried out to substrate.
In the present embodiment, substrate is sapphire.
Specifically, this step 201 can include：
In a hydrogen atmosphere, high-temperature process substrate 5～6min.
Wherein, reaction chamber temperature can be 1000～1100 DEG C, and chamber pressure can control in 200～500torr.
Step 202：In Grown low temperature buffer layer.
In the present embodiment, low temperature buffer layer is GaN layer, and thickness can be 15～30nm.During low temperature growth buffer layer, instead
Answer room temperature can be 530～560 DEG C, chamber pressure can control in 200～500torr.
Specifically, low temperature buffer layer is grown on sapphire [0001] face.
Step 203：High temperature buffer layer is grown on low temperature buffer layer.
In the present embodiment, high temperature buffer layer is plain GaN layer, and thickness can be 2～3.5 μm.Growth high temperature delays
When rushing layer, reaction chamber temperature can be 1000～1100 DEG C, and chamber pressure can control in 200～600torr.
Step 204：N-type layer is grown on high temperature buffer layer.
In the present embodiment, N-type layer is the GaN layer that doping is higher than setting concentration Si, and thickness can be 1～2 μm.Growth N
During type layer, reaction chamber temperature can be 1000～1100 DEG C, and chamber pressure can control in 200～600torr.
Step 205：Mqw layer is grown on N-type layer.
In the present embodiment, referring to Fig. 2, mqw layer 50 includes alternately laminated InGaN quantum well layer 510 and GaN quantum is built
Layer 520.
Quantum well layer 510 is divided into first kind SQW 511, Equations of The Second Kind SQW 512,513 3 kinds of the 3rd class SQW, the
One class SQW 511, Equations of The Second Kind SQW 512, the 3rd class SQW 513 all include at least adjacent quantum well layer of two-layer 510,
The growth temperature of the quantum well layer 510 in first kind SQW 511 successively reduces along the direction of growth of LED epitaxial slice,
The In content of the quantum well layer 510 in Equations of The Second Kind SQW 512 successively changes along the direction of growth of LED epitaxial slice, the
The ratio of the In content of the quantum well layer 510 in three class SQWs 513 and Ga content is along the growth side of LED epitaxial slice
To successively reducing, all quantum well layers 510 belong to first kind SQW successively along the direction of growth of LED epitaxial slice
511st, Equations of The Second Kind SQW 512, the 3rd class SQW 513.
It should be noted that the growth temperature of quantum well layer in first kind SQW is along the life of LED epitaxial slice
Length direction successively reduces, and so that the In of the quantum well layer in first kind SQW is distributed from less to more, is conducive to InGaN's and GaN
Stress Release, can effectively reduce stress to reduce defect concentration, prepare for the trap that mainly lights close to P-type layer below；The
The In content of the quantum well layer in two class SQWs successively changes along the direction of growth of LED epitaxial slice, forms localized modes
Luminescent quantum dot, the recombination probability in electronics and hole can be improved to a certain extent；Quantum well layer in 3rd class SQW
In content and the ratio of Ga content successively reduce along the direction of growth of LED epitaxial slice, make in the 3rd class SQW
The In content of quantum well layer gradually reduces, and can prevent the diffusion of In from causing the destruction to crystal mass.
Further, quantum barrier layer 520 is segmented into first kind quantum base 521 and Equations of The Second Kind quantum builds 522, first kind amount
Son base 521 and Equations of The Second Kind quantum are built 522 and are all included at least one of which quantum barrier layer 520, and first kind quantum builds the quantum barrier layer in 521
The growth temperature of 520 zone line is higher than the growth temperature of two side areas, and first kind quantum builds the quantum barrier layer 520 in 521
Zone line growth rate be higher than two side areas growth rate, Equations of The Second Kind quantum build 522 in quantum barrier layer 520 life
Long temperature keeps constant, and the growth rate that Equations of The Second Kind quantum builds the quantum barrier layer 520 in 522 keeps constant, all quantum barrier layers
Part quantum barrier layer 520 in 520 belongs to first kind quantum and builds 521, and remaining quantum barrier layer 520 belongs to Equations of The Second Kind quantum and builds
522.
Alternatively, in all quantum barrier layers 520, at least half of quantum barrier layer 520 may belong to first kind quantum base 521.
Crystal mass of whole MQW is improved a lot for this it is contemplated that the complexity that grows, so not making all quantum barrier layers
Belong to first kind quantum to build.
Alternatively, the growth temperature that first kind quantum builds the two side areas of quantum barrier layer 520 in 521 can be higher than quantum
The maximum growth temperature of well layer 510.Build the growth temperature of the zone line of the quantum barrier layer 520 in 521 plus first kind quantum
Higher than the growth temperature of two side areas, both can ensure that crystal mass and trap will not have been caused with larger destruction.According to constant temperature
Growth, when being more or less the same with trap temperature, can be very little to the destruction of trap, but the total quality of whole SQW can be substantially reduced；
When larger with the temperature difference of trap temperature, the crystal mass of SQW can be greatly improved, but also can be very serious to the destruction of trap,
The final reduction that all can cause luminous efficiency.
Alternatively, the growth rate that first kind quantum builds the two side areas of quantum barrier layer 520 in 521 can be higher than quantum
The fastest growth rate of well layer 510.Build the growth rate of the zone line of the quantum barrier layer 520 in 521 plus first kind quantum
Higher than the growth rate of two side areas, both will not substantially be corrupted to trap, and also can guarantee that crystal mass is not deteriorated, can also coordinate simultaneously
The growth temperature that first kind quantum builds the zone line of quantum barrier layer 520 in 521 is higher than the growth temperature of two side areas, high temperature
Duan Bijing is that have certain destruction to trap, so growth rate is fast, to reduce the growth time of high temperature section.
Alternatively, the number of plies of quantum well layer 510 can be at least 12 layers, and the number of plies of quantum barrier layer 520 can be at least 12
Layer.If being less than 12 layers, because quantum well layer 510 is divided into first kind SQW 511, Equations of The Second Kind SQW 512, the 3rd class SQW
513 3 kinds, first kind SQW 511, Equations of The Second Kind SQW 512, the 3rd class SQW 513 all include at least adjacent amount of two-layer
Sub- well layer 510, the effect of quantum well layer structure is poor.
Preferably, the number of plies of quantum well layer 510 can be 12～16 layers, and the number of plies of quantum barrier layer 520 can be 12～16
Layer.If being more than 16 layers, on the one hand can increase more cost, on the other hand also can increase the polarity effect of trap, impact electronics and sky
The recombination luminescence efficiency in cave.The number of plies is more excellent at 12～16 layers, both can play the beneficial effect that quantum well layer structure is brought, also not
More cost can be increased and increase polarity effect.
Step 206：Growing P-type layer on mqw layer.
In the present embodiment, P-type layer includes electronic barrier layer and hole provides layer.Electronic barrier layer is doping Mg
AlyGa1-yN shell, 0.15≤y≤0.25, thickness can be 30～50nm.During growth electronic barrier layer, reaction chamber temperature can be
930～970 DEG C, chamber pressure can control in 100torr.It is the GaN layer that doping is higher than setting concentration Mg that hole provides layer,
Thickness can be 50～80nm.When growth hole provides layer, reaction chamber temperature can be 940～980 DEG C, and chamber pressure is permissible
Control in 200～600torr.
Step 207：Activation P-type layer.
Specifically, soak time can be 30min.Wherein, reaction chamber temperature can be 650～750 DEG C.
It should be noted that activation P-type layer is mainly the Mg activating doping in hole offer layer, Mg is made to produce more after activating
Many holes, it is to avoid lead to Ohmic contact poor due to not activating, cause chip brightness low and the high situation of voltage.
Separately below the first sample and the second sample are plated under identical process conditions with the tin indium oxide metal oxygen of 110nm
Compound (English：Indium Tin Oxides, referred to as：ITO) layer, the Cr/Pt/Au electrode of 120nm and the SiO of 40nm2Protection
Layer, and respectively the first sample after processing and the second sample grinding and cutting are become the core particles of 305 μm * 635 μm (12mi*25mil)
Core particles with 229 μm * 559 μm (9mi*22mil).Wherein, the first sample is the life using traditional LED epitaxial slice
Long method obtains, and the second sample is that the growing method of the LED epitaxial slice being provided using the present embodiment is obtained.
Then the same position of the first sample after treatment and the second sample each selects 200 crystal grain, in identical
Under process conditions, it is packaged into white light LEDs.Tested under the conditions of driving current 120mA and 60mA respectively using integrating sphere and come from
The crystal grain of the first sample and come from the second sample crystal grain photoelectric properties.
Result shows, compared with than coming from the crystal grain of the first sample, light intensity exists the crystal grain coming from the second sample respectively
It is significantly improved under 120mA and 60mA driving current, illustrate that the growing method that the present embodiment provides can improve electron waves really
The overlapping degree of function and hole wave functions finally improves luminous efficiency with effectively reducing the formation of non-radiative recombination center.
The embodiment of the present invention is passed through growing growth temperature along the direction of growth of LED epitaxial slice close to N-type layer section
The quantum well layer successively reducing, makes In be distributed from less to more, is conducive to the Stress Release of InGaN and GaN；Close to P-type layer section
The ratio of growth In content and Ga content along the quantum well layer that successively reduces of the direction of growth of LED epitaxial slice, make In by
Step reduces, and the stress between InGaN and GaN is released；Both can act as reducing the effect of polarity effect, and then reduces
The degreeof tortuosity of well layer, improves the overlapping degree of electron wave function and hole wave functions, effectively improves electronics and hole in quantum
Radiation recombination efficiency in trap.And the growth temperature of the zone line of quantum barrier layer in first kind quantum base is higher than two lateral areas
The growth temperature in domain, that is, lower close to the temperature of well layer, quantum well layer can be protected, reduce the analysis to its During barrier layer high temperature
Go out, the barrier layer of middle high temperature both can improve crystal mass simultaneously, and also well layer will not be caused with very big destruction.First kind quantum
The growth rate of the zone line of the quantum barrier layer in base is higher than the growth rate of two side areas, that is, close to the speed of growth of well layer
Less than the growth rate of high temperature section barrier layer, that is, the growth rate of high temperature section is high, so can reduce high temperature section and well layer is broken
Bad, the fit structure of quantum barrier layer and quantum well layer finally improves the luminous efficiency of LED.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of growing method of LED epitaxial slice, described growing method includes：
Successively in Grown low temperature buffer layer, high temperature buffer layer, N-type layer, mqw layer, P-type layer, described mqw layer includes replacing
The InGaN quantum well layer of stacking and GaN quantum barrier layer；
It is characterized in that, described quantum well layer is divided into first kind SQW, Equations of The Second Kind SQW, three kinds of the 3rd class SQW, institute
State first kind SQW, described Equations of The Second Kind SQW, described 3rd class SQW all include the adjacent described quantum of at least two-layer
Well layer, the growth temperature of the described quantum well layer in described first kind SQW is along the growth side of described LED epitaxial slice
To successively reducing, the In content of the described quantum well layer in described Equations of The Second Kind SQW is along the life of described LED epitaxial slice
Length direction successively changes, and the In content of described quantum well layer in described 3rd class SQW and the ratio of Ga content are along described
The direction of growth of optical diode epitaxial wafer successively reduces, and all described quantum well layers are along the growth of described LED epitaxial slice
Direction belongs to described first kind SQW, described Equations of The Second Kind SQW, described 3rd class SQW successively.
2. growing method according to claim 1 is it is characterised in that the number of plies of described quantum well layer is at least 12 layers, institute
The number of plies stating quantum barrier layer is at least 12 layers.
3. growing method according to claim 2 it is characterised in that described quantum well layer the number of plies be 12～16 layers, institute
The number of plies stating quantum barrier layer is 12～16 layers.
4. the growing method according to any one of claims 1 to 3 is it is characterised in that described quantum barrier layer is divided into the first kind
Quantum is built and Equations of The Second Kind quantum is built, and described first kind quantum is built and described Equations of The Second Kind quantum barrier layer all includes amount described at least one of which
Sub- barrier layer, the growth temperature of the zone line of described quantum barrier layer in described first kind quantum base is higher than the growth of two side areas
Temperature, the growth rate of the zone line of described quantum barrier layer in described first kind quantum base is higher than the growth speed of two side areas
Rate, the growth temperature of the described quantum barrier layer in described Equations of The Second Kind quantum base keeps constant, the institute in described Equations of The Second Kind quantum base
The growth rate stating quantum barrier layer keeps constant, and the partly described quantum barrier layer in all described quantum barrier layers belongs to described first
Class quantum is built, and remaining described quantum barrier layer belongs to described Equations of The Second Kind quantum and builds.
5. growing method according to claim 4 is it is characterised in that at least half of described in all described quantum barrier layers
Quantum barrier layer belongs to described first kind quantum and builds.
6. growing method according to claim 4 it is characterised in that described first kind quantum build in described quantum barrier layer
Two side areas growth temperature be higher than described quantum well layer maximum growth temperature.
7. growing method according to claim 4 it is characterised in that described first kind quantum build in described quantum barrier layer
Two side areas growth rate be higher than described quantum well layer the fastest growth rate.
8. the growing method according to any one of claims 1 to 3 is it is characterised in that described P-type layer includes electronic barrier layer
There is provided layer with hole, described electronic barrier layer is the Al of doping MgyGa1-yN shell, 0.15≤y≤0.25, described hole provides layer
For doping higher than the GaN layer setting concentration Mg.
9. the growing method according to any one of claims 1 to 3 is it is characterised in that described N-type layer is doping higher than setting
The GaN layer of concentration Si.
10. the growing method according to any one of claims 1 to 3 is it is characterised in that described growing method also includes：
Pretreatment is carried out to substrate.
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