CN105870277B - A kind of LED epitaxial slice and its growing method - Google Patents
A kind of LED epitaxial slice and its growing method Download PDFInfo
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- CN105870277B CN105870277B CN201610247660.9A CN201610247660A CN105870277B CN 105870277 B CN105870277 B CN 105870277B CN 201610247660 A CN201610247660 A CN 201610247660A CN 105870277 B CN105870277 B CN 105870277B
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000012010 growth Effects 0.000 claims abstract description 164
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 150
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 230000007547 defect Effects 0.000 claims abstract description 35
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 15
- 239000010980 sapphire Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000009643 growth defect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 274
- 239000013078 crystal Substances 0.000 description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000009089 cytolysis Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 tin indium oxide metal oxide Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED epitaxial slice and its growing methods, belong to technical field of semiconductors.The LED epitaxial slice includes Sapphire Substrate, low temperature buffer layer, high temperature buffer layer, N-type layer, defect barrier layer, active layer, electronic barrier layer, P-type layer, defect barrier layer includes the first sublayer and the second sublayer, first sublayer includes alternately stacked first AlGaN layer and GaN layer, and the second sublayer includes alternately stacked second AlGaN layer and the 3rd AlGaN layer；Al content in first AlGaN layer is gradually changed along the direction of growth of the LED epitaxial slice, the Al content in Al content and the 3rd AlGaN layer in second AlGaN layer remains unchanged, and the Al content in the second AlGaN layer is different from the Al content in the 3rd AlGaN layer and respectively less than the first AlGaN layer in Al content.The present invention has barrier effect to the extension of defect.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and its growing method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.LED
As it is a kind of efficiently, environmental protection, green New Solid lighting source, by it is rapid be widely used in as traffic lights,
The fields such as automobile interior exterior lamp, landscape light in city, cell phone back light source.
Existing LED epitaxial wafer include Sapphire Substrate and stack gradually low temperature buffer layer on a sapphire substrate,
High temperature buffer layer, N-type layer, active layer, P-type layer.Wherein, N-type layer and P-type layer are GaN layer, and active layer includes alternately stacked
InGaN layer and GaN layer.
In the implementation of the present invention, inventor has found that the prior art has at least the following problems：
There are lattice mismatch between sapphire and GaN, caused by lattice mismatch the defects of, extends to along the direction of growth of LED
Active layer influences electronics and the recombination luminescence in hole in active layer and causes to leak electricity, reduces the functionality and reliability of LED.
The content of the invention
In order to solve problem of the prior art, an embodiment of the present invention provides a kind of LED epitaxial slice and its growths
Method.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice bags
Include Sapphire Substrate and the low temperature buffer layer being sequentially laminated in the Sapphire Substrate, high temperature buffer layer, N-type layer, active
Layer, electronic barrier layer, P-type layer, the LED epitaxial slice, which further includes, to be layered between the N-type layer and the active layer
The defects of barrier layer, the defect barrier layer includes being sequentially laminated on the first sublayer and the second sublayer in the N-type layer, described
First sublayer includes alternately stacked first AlGaN layer and GaN layer, and second sublayer includes alternately stacked 2nd AlGaN
Layer and the 3rd AlGaN layer；Al content in first AlGaN layer is gradual along the direction of growth of the LED epitaxial slice
Variation, the Al content in Al content and the 3rd AlGaN layer in second AlGaN layer remain unchanged, and described the
Al content in two AlGaN layers is different from the Al content in the 3rd AlGaN layer, the Al content in second AlGaN layer
Less than the Al content in first AlGaN layer, the Al content in the 3rd AlGaN layer is less than in first AlGaN layer
Al content；First sublayer is neutralized in second sublayer doped with Si, the doping concentration of Si in first sublayer
Less than the doping concentration of Si in second sublayer；The life of the growth pressure of first AlGaN layer, second AlGaN layer
Long pressure, the growth pressure of the 3rd AlGaN layer are respectively less than the growth pressure of the GaN layer；The growth of first sublayer
Rate is less than the growth rate of second sublayer, and the growth temperature of first sublayer is less than the growth temperature of second sublayer
Degree；The thickness of first sublayer is more than the thickness of second sublayer.
Optionally, the Al content in first sublayer is no more than twice of the Al content in second sublayer.
Optionally, in first sublayer Si doping concentration for the doping concentration of Si in second sublayer 0.2~
0.5 times.
Optionally, the growth pressure of first AlGaN layer be 50~150torr, the growth pressure of second AlGaN layer
Power is 50~150torr, and the growth pressure of the 3rd AlGaN layer is 50~150torr, and the growth pressure of the GaN layer is
200~350torr.
Optionally, the growth temperature of first sublayer is 1040~1060 DEG C, and the growth temperature of second sublayer is
1060~1090 DEG C.
Optionally, the thickness of first sublayer is 100~300 angstroms, and the thickness of second sublayer is 50~200 angstroms.
Optionally, the growth rate of first sublayer is 0.4~0.8 times of growth rate of second sublayer.
On the other hand, an embodiment of the present invention provides a kind of growing method of LED epitaxial slice, the growth sides
Method includes：
Low temperature growth buffer layer on a sapphire substrate；
High temperature buffer layer is grown on the low temperature buffer layer；
N-type layer is grown on the high temperature buffer layer；
The growth defect barrier layer in the N-type layer；
Active layer is grown on the defect barrier layer；
Electronic barrier layer is grown on the active layer；
The growing P-type layer on the electronic barrier layer；
Wherein, the defect barrier layer includes the first sublayer and the second sublayer that are sequentially laminated in the N-type layer, described
First sublayer includes alternately stacked first AlGaN layer and GaN layer, and second sublayer includes alternately stacked 2nd AlGaN
Layer and the 3rd AlGaN layer；Al content in first AlGaN layer is gradual along the direction of growth of the LED epitaxial slice
Variation, the Al content in Al content and the 3rd AlGaN layer in second AlGaN layer remain unchanged, and described the
Al content in two AlGaN layers is different from the Al content in the 3rd AlGaN layer, the Al content in second AlGaN layer
Less than the Al content in first AlGaN layer, the Al content in the 3rd AlGaN layer is less than in first AlGaN layer
Al content；First sublayer is neutralized in second sublayer doped with Si, the doping concentration of Si in first sublayer
Less than the doping concentration of Si in second sublayer；The life of the growth pressure of first AlGaN layer, second AlGaN layer
Long pressure, the growth pressure of the 3rd AlGaN layer are respectively less than the growth pressure of the GaN layer；The growth of first sublayer
Rate is less than the growth rate of second sublayer, and the growth temperature of first sublayer is less than the growth temperature of second sublayer
Degree；The thickness of first sublayer is more than the thickness of second sublayer.
Optionally, the Al content in first sublayer is no more than twice of the Al content in second sublayer.
Optionally, in first sublayer Si doping concentration for the doping concentration of Si in second sublayer 0.2~
0.5 times.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By setting defect barrier layer between N-type layer and active layer, defect barrier layer includes stacking gradually in N-type layer
First sublayer and the second sublayer, the first sublayer include alternately stacked first AlGaN layer and GaN layer, utilize the characteristic of Al materials
Long brilliant dislocation and crack are reduced, the GaN integralities for making subsequent growth are preferable, have barrier effect to the extension of defect；Simultaneously
Al content in first AlGaN layer is gradually changed along the direction of growth of LED epitaxial wafer, avoids Al as a kind of impurity effect GaN
Crystalline perfection；Second sublayer includes alternately stacked second AlGaN layer and the 3rd AlGaN layer, the Al in the second AlGaN layer
Content is different from the Al content in the 3rd AlGaN layer, since the energy rank of Al is higher, can stepwise improve energy rank and increase
Add impedance, electric current can effectively be spread.The doping concentration of Si is less than the doping concentration of Si in the second sublayer in first sublayer, more has
Beneficial to the extension of electronics, electronics is made preferably to be distributed in active layer.And first sublayer thickness be more than the second sublayer, to lack
Sunken extension has good blocking effect, is conducive to long crystalline substance.The growth temperature of first sublayer is less than the growth temperature of the second sublayer
Degree, the growth rate that the second sublayer is less than with the growth rate of the first sublayer coordinate, and are also beneficial to subsequent GaN crystallizations.In addition,
Since the radius of the radius ratio Ga atoms of Al atoms is small, surface diffusion length very little, the parasitic reaction in growth course is tighter
Weight, the growth pressure of AlGaN layer can reduce parasitism strong between TMAl and NH3 to the greatest extent instead less than the growth pressure of GaN layer
It should.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow chart of the growing method of LED epitaxial slice provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of LED epitaxial slices, and referring to Fig. 1, which includes
Sapphire Substrate 1 and the low temperature buffer layer 2 being sequentially laminated in Sapphire Substrate 1, high temperature buffer layer 3, N-type layer 4, defect
Barrier layer 5, active layer 6, electronic barrier layer 7, P-type layer 8.
In the present embodiment, defect barrier layer 5 includes the first sublayer 51 and the second sublayer that are sequentially laminated in N-type layer 4
52, the first sublayer 51 includes alternately stacked first AlGaN layer 51a and GaN layer 51b, and the second sublayer 52 includes alternately stacked
Second AlGaN layer 52a and the 3rd AlGaN layer 52b.Life of the Al content along LED epitaxial slice in first AlGaN layer 51a
Length direction gradually changes, and the Al content in Al content and the 3rd AlGaN layer 52b in the second AlGaN layer 52a remains unchanged,
And the second Al content in AlGaN layer 52a is different from the Al content in the 3rd AlGaN layer 52b, the Al in the second AlGaN layer 52a
Content is less than the Al content in the first AlGaN layer 51a, and the Al content in the 3rd AlGaN layer 52b is less than in the first AlGaN layer 51a
Al content.First sublayer 51 is neutralized doped with Si in the second sublayer 52, and the doping concentration of Si is less than the in the first sublayer 51
The doping concentration of Si in two sublayers 52.The growth pressure of first AlGaN layer 51a, the growth pressure of the second AlGaN layer 52a, the 3rd
The growth pressure of AlGaN layer 52b is respectively less than the growth pressure of GaN layer 51b.The growth rate of first sublayer 51 is less than the second sublayer
52 growth rate, the growth temperature of the first sublayer 51 are less than the growth temperature of the second sublayer 52.The thickness of first sublayer 51 is big
In the thickness of the second sublayer 52.
Specifically, the Al content in the first AlGaN layer 51a can gradually increase along the direction of growth of LED epitaxial slice
Add, can also be gradually decreased along the direction of growth of LED epitaxial slice, the two, which can act as, effectively stops defect and guarantor
Demonstrate,prove the purpose of crystal quality.Al content in second AlGaN layer 52a can be more than the Al content in the 3rd AlGaN layer 52b,
The Al content that can be less than in the 3rd AlGaN layer 52b, both can be with the effect of ladder energy rank and dual effective diffusing electrons.
Optionally, the Al content in the first sublayer 51 can be no more than twice of the Al content in the second sublayer 52.It is if big
In twice, then can because of can rank it is too high, electron concentration is relatively low, so as to influence the diffusion of electronics, as Al doping concentrations compared with
It is high and influence crystal quality.In addition, if the Al content in the first sublayer 51 is less than the Al content in the second sublayer 52, do not have
The effect of dual ladder energy rank, stopping the ability of bottom defect can also reduce.
Optionally, in the first sublayer 51 Si doping concentration can be the second sublayer 52 in Si doping concentration 0.2~
0.5 times.If less than 0.2 times, it is too low and do not have the purpose of dissufion current that concentration can be mixed due to Si；If more than 0.5 times, then can
Cause poor crystal quality since doping concentration is larger.
Preferably, in the first sublayer 51 Si doping concentration can be the second sublayer 52 in Si doping concentration 0.3~
0.5 times.It is demonstrated experimentally that the doping concentration of Si is 0.3~0.5 times of the doping concentration of Si in the second sublayer 52 in the first sublayer 51
When, it is ensured that current spread and preferably crystal quality.
Optionally, the growth pressure of the first AlGaN layer 51a can be 50~150torr, the growth of the second AlGaN layer 52a
Pressure can be 50~150torr, and the growth pressure of the 3rd AlGaN layer 52b can be 50~150torr.If the life of AlGaN layer
Long pressure is less than 50torr, then can influence the lysis efficiency of NH3 since pressure is too low, cause thickness partially thin, cannot ideal
The defects of barrier layer；If the growth pressure of AlGaN layer is more than 150torr, the pre-reaction of TMAl and NH3 can be aggravated, it is similary to obtain
The defects of less than ideal barrier layer.
Preferably, the growth pressure of the first AlGaN layer 51a can be 60~100torr, the growth of the second AlGaN layer 52a
Pressure can be 60~100torr, and the growth pressure of the 3rd AlGaN layer 52b can be 60~100torr.It is demonstrated experimentally that
When the growth pressure of AlGaN layer is 60~100torr, the defects of can obtain ideal barrier layer.
Optionally, the growth pressure of GaN layer 51b can be 200~350torr.If the growth pressure of GaN layer 51b is less than
200torr can then reduce the lysis efficiency of NH3 and increase the dosage of NH3；If the growth pressure of GaN layer 51b is more than 350torr,
The low pressure switching time with AlGaN layer can then be increased and increase growth time, and then increase cost, influence output.
Preferably, the growth pressure of GaN layer 51b can be 200~250torr.It is demonstrated experimentally that the growth pressure of GaN layer 51b
When power is 200~250torr, it can not only ensure the lysis efficiency and dosage of NH3, but also growth time will not be increased.
Optionally, the growth temperature of the first sublayer 51 can be 1040~1060 DEG C.If the growth temperature of the first sublayer 51
Less than 1040 DEG C, then the crystal quality of the first sublayer 51 can be influenced because temperature is too low；If the growth temperature of the first sublayer 51
Higher than 1060 DEG C, although crystal growth quality can be improved, the lysis efficiency of NH3 can be improved because temperature is too high, and then aggravated
The pre-reaction of TMAl and NH3.
Preferably, the growth temperature of the first sublayer 51 can be 1050~1060 DEG C.It is demonstrated experimentally that the life of the first sublayer 51
When long temperature is 1050~1060 DEG C, it can both ensure crystal growth quality, the pre-reaction of TMAl and NH3 will not be aggravated.
Optionally, the growth temperature of the second sublayer 52 can be 1060~1090 DEG C.If the growth temperature of the second sublayer 52
, then can be too fast because of growth rate less than 1060 DEG C, temperature is again not high enough, and causes poor crystal quality；If the second sublayer 52
Growth temperature higher than 1090 DEG C, although crystal growth quality can be greatly improved, the pre-reaction of TMAl and NH3 can be aggravated.
Preferably, the growth temperature of the second sublayer 52 can be 1060~1080 DEG C.It is demonstrated experimentally that the life of the second sublayer 52
When long temperature is 1060~1080 DEG C, it can not only play and make up the side effect that growth rate is brought very much soon, but also will not seriously affect
The pre-reaction of TMAl and NH3.
Optionally, the thickness of the first sublayer 51 can be 100~300 angstroms.If the thickness of the first sublayer 51 is less than 100 angstroms,
The purpose for stopping defect then can not be had since thickness is too thin；If the thickness of the first sublayer 51 is more than 300 angstroms, can be due to thickness
Degree diffusion that is thicker and influencing electronics.
Preferably, the thickness of the first sublayer 51 can be 150~250 angstroms.It is demonstrated experimentally that the thickness of the first sublayer 51 is
At 150~250 angstroms, stop defect can be both played, ensures that effective diffusion of electronics.
Optionally, the thickness of the second sublayer 52 can be 50~200 angstroms.If the thickness of the second sublayer 52 is less than 50 angstroms,
The energy rank to form ladder can be not achieved since thickness is partially thin；If the thickness of the second sublayer 52 is more than 200 angstroms, can be because of too thick
Influence effective diffusion of electronics.
Preferably, the thickness of the second sublayer 52 can be 100~150 angstroms.It is demonstrated experimentally that the thickness of the second sublayer 52 is
At 100~150 angstroms, ladder energy rank can have not only been formed, but also can better diffusing electrons.
Optionally, the growth rate of the first sublayer 51 can be 0.4~0.8 times of the growth rate of the second sublayer 52.If
, then can be too slow due to speed less than 0.4 times, the growth temperature of the first sublayer 51 is relatively low, so as to introduce unnecessary defect；It is if big
, then can be very fast due to growth rate in 0.8 times, the growth temperature of the first sublayer 51 is relatively low, can equally influence crystal quality.
Preferably, the growth rate of the first sublayer 51 can be 0.5~0.6 times of the growth rate of the second sublayer 52.It is real
Verify it is bright, the growth rate of the first sublayer 51 for 0.5~0.6 times of the growth rate of the second sublayer when, it is ensured that temperature and life
The cooperation of long rate.
It should be noted that low temperature buffer layer 2 can be GaN layer, the thickness of low temperature buffer layer 2 can be 15~30nm.
High temperature buffer layer 3 can be undoped GaN layer, and the thickness of high temperature buffer layer 3 can be 2~3.5 μm.N-type layer 4 can be to mix
The GaN layer of Si, the thickness of N-type layer 4 can be 2~3 μm.Active layer 6 can include the InGaN well layer of alternating growth and GaN is built
Layer.Wherein, the thickness of InGaN layer can be 2~3nm, and the thickness of GaN layer can be 8~11nm；The number of plies of InGaN layer can be with
For 11~13 layers, the number of plies of GaN layer can be 11~13 layers；The thickness of active layer 6 can be 130~160nm.Electronic barrier layer
7 can be the Al for mixing MgyGa1-yN layers, 0.15≤y≤0.25, the thickness of electronic barrier layer 7 can be 30~50nm.P-type layer 8
Can be the GaN layer for mixing Mg, the thickness of P-type layer 8 can be 50~80nm.
By setting defect barrier layer between N-type layer and active layer, defect barrier layer is included successively the embodiment of the present invention
The first sublayer and the second sublayer being stacked in N-type layer, the first sublayer include alternately stacked first AlGaN layer and GaN layer, utilize
The characteristic of Al materials reduces long brilliant dislocation and crack, and the GaN integralities for making subsequent growth are preferable, has resistance to the extension of defect
Gear acts on；The Al content in the first AlGaN layer is gradually changed along the direction of growth of LED epitaxial wafer simultaneously, avoids Al as a kind of
The crystalline perfection of impurity effect GaN；Second sublayer include alternately stacked second AlGaN layer and the 3rd AlGaN layer, second
Al content in AlGaN layer is different from the Al content in the 3rd AlGaN layer, can be with staged since the energy rank of Al is higher
Ground improves energy rank and increases impedance, and electric current can effectively be spread.The doping concentration of Si is less than Si in the second sublayer in first sublayer
Doping concentration, be more advantageous to the extension of electronics, electronics made preferably to be distributed in active layer.And first sublayer thickness it is big
In the second sublayer, there is good blocking effect to the extension of defect, be conducive to long crystalline substance.The growth temperature of first sublayer is less than the
The growth temperature of two sublayers, the growth rate that the second sublayer is less than with the growth rate of the first sublayer coordinate, and are also beneficial to follow-up
GaN crystallization.Further, since the radius of the radius ratio Ga atoms of Al atoms is small, surface diffusion length very little, in growth course
Parasitic reaction it is more serious, the growth pressure of AlGaN layer be less than GaN layer growth pressure can reduce to the greatest extent TMAl and NH3 it
Between strong parasitic reaction.
Embodiment two
An embodiment of the present invention provides a kind of growing methods of LED epitaxial slice, are carried suitable for growth embodiment one
The LED epitaxial slice of confession, referring to Fig. 2, which includes：
Step 200：Sapphire Substrate is pre-processed.
Specifically, which can include：
In a hydrogen atmosphere, 5~6min of high-temperature process substrate.
Wherein, reaction chamber temperature is 1000~1100 DEG C, and chamber pressure is controlled in 200~500torr.
In the present embodiment, using Veeco K465i or C4MOCVD (Metal Organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) equipment realize LED epitaxial wafer growing method.Using high-purity H2
(hydrogen), high-purity N2(nitrogen), high-purity H2And high-purity N2Mixed gas in a kind of as carrier gas, high-purity N H3As N sources, three
As gallium source, trimethyl indium (TMIn) is used as indium source for methyl gallium (TMGa) and triethyl-gallium (TEGa), and silane (SiH4) is used as N-type
Dopant, trimethyl aluminium (TMAl) are used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.Chamber pressure is 100-
600torr。
Step 201：Low temperature growth buffer layer on a sapphire substrate.
Specifically, low temperature buffer layer is grown on sapphire [0001] face.
In the present embodiment, low temperature buffer layer can be GaN layer, and thickness is 15~30nm.During low temperature growth buffer layer, instead
Answering room temperature, chamber pressure is controlled in 200~500torr for 530~560 DEG C.
Step 202：High temperature buffer layer is grown on low temperature buffer layer.
In the present embodiment, high temperature buffer layer can be the GaN layer to undope, thickness 2-3.5um.Grow high-temperature buffer
During layer, reaction chamber temperature is 1000-1100 DEG C, and chamber pressure is controlled in 200-600torr.
Step 203：N-type layer is grown on high temperature buffer layer.
In the present embodiment, N-type layer can be to mix the GaN layer of Si, thickness 2-3um.When growing N-type layer, room temperature is reacted
It spends for 1000-1100 DEG C, chamber pressure is controlled in 200-300torr.
Step 204：The growth defect barrier layer in N-type layer.
In the present embodiment, defect barrier layer includes being sequentially laminated on the first sublayer and the second sublayer in N-type layer, and first
Sublayer includes alternately stacked first AlGaN layer and GaN layer, and the second sublayer includes alternately stacked second AlGaN layer and the 3rd
AlGaN layer.Al content in first AlGaN layer is gradually changed along the direction of growth of LED epitaxial slice, the second AlGaN layer
In Al content and the 3rd AlGaN layer in Al content remain unchanged, and the Al content in the second AlGaN layer and the 3rd
Al content in AlGaN layer is different, and the Al content in the second AlGaN layer is less than the Al content in the first AlGaN layer, and the 3rd
Al content in AlGaN layer is less than the Al content in the first AlGaN layer.First sublayer is neutralized doped with Si in the second sublayer,
The doping concentration of Si is less than the doping concentration of Si in the second sublayer in first sublayer.The growth pressure of first AlGaN layer, second
The growth pressure of AlGaN layer, the growth pressure of the 3rd AlGaN layer are respectively less than the growth pressure of GaN layer.The growth speed of first sublayer
Rate is less than the growth rate of the second sublayer, and the growth temperature of the first sublayer is less than the growth temperature of the second sublayer.First sublayer
Thickness is more than the thickness of the second sublayer.
Specifically, the Al content in the first AlGaN layer can be gradually increased along the direction of growth of LED epitaxial slice,
It can also be gradually decreased along the direction of growth of LED epitaxial slice.Al content in second AlGaN layer can be more than the 3rd
Al content in AlGaN layer might be less that the Al content in the 3rd AlGaN layer.
Optionally, the Al content in the first sublayer can be no more than twice of the Al content in the second sublayer.
Optionally, the doping concentration of Si can be 0.2~0.5 of the doping concentration of Si in the second sublayer in the first sublayer
Times.
Preferably, the doping concentration of Si can be 0.3~0.5 of the doping concentration of Si in the second sublayer in the first sublayer
Times.
Optionally, the growth pressure of the first AlGaN layer can be 50~150torr, and the growth pressure of the second AlGaN layer can
Think 50~150torr, the growth pressure of the 3rd AlGaN layer can be 50~150torr.
Preferably, the growth pressure of the first AlGaN layer can be 60~100torr, and the growth pressure of the second AlGaN layer can
Think 60~100torr, the growth pressure of the 3rd AlGaN layer can be 60~100torr.
Optionally, the growth pressure of GaN layer can be 200~350torr.
Preferably, the growth pressure of GaN layer can be 200~250torr.
Optionally, the growth temperature of the first sublayer can be 1040~1060 DEG C.
Preferably, the growth temperature of the first sublayer can be 1050~1060 DEG C.
Optionally, the growth temperature of the second sublayer can be 1060~1090 DEG C.
Preferably, the growth temperature of the second sublayer can be 1060~1080 DEG C.
Optionally, the thickness of the first sublayer can be 100~300 angstroms.
Preferably, the thickness of the first sublayer can be 150~250 angstroms.
Optionally, the thickness of the second sublayer can be 50~200 angstroms.
Preferably, the thickness of the second sublayer can be 100~150 angstroms.
Optionally, the growth rate of the first sublayer can be 0.4~0.8 times of the growth rate of the second sublayer
Preferably, the growth rate of the first sublayer can be 0.5~0.6 times of the growth rate of the second sublayer.
Step 205：Active layer is grown on defect barrier layer.
In the present embodiment, active layer can include the InGaN well layer of alternating growth and GaN barrier layer.Wherein, InGaN layer
Thickness can be 2~3nm, the thickness of GaN layer can be 8~11nm.The number of plies of InGaN layer can be 11~13 layers, GaN layer
The number of plies can be 11~13 layers.The thickness of active layer can be 130~160nm.
Specifically, when growing active layer, chamber pressure is controlled in 200torr.When growing InGaN well layer, room temperature is reacted
It spends for 760-780 DEG C.When growing GaN barrier layer, reaction chamber temperature is 860-890 DEG C.
Step 206：Electronic barrier layer is grown on active layer.
In the present embodiment, electronic barrier layer can be the Al for mixing MgyGa1-yN, 0.15≤y≤0.25, electronic barrier layer
Thickness can be 30-50nm.
Specifically, when growing electronic barrier layer, reaction chamber temperature is 930-970 DEG C, and chamber pressure control exists
100torr。
Step 207：The growing P-type layer on electronic barrier layer.
In the present embodiment, P-type layer can be to mix the GaN layer of Mg, and the thickness of P-type layer can be 50-80nm.
Specifically, during growing P-type layer, reaction chamber temperature is 940-980 DEG C, and chamber pressure is controlled in 200-600torr.
Step 208：Activate P-type layer.
Specifically, which can include：
In a nitrogen atmosphere, 20~30min of P-type layer is persistently handled.
Wherein, reaction chamber temperature is 650-750 DEG C.It should be noted that activation P-type layer is mainly activated and mixed in P-type layer
Miscellaneous Mg makes Mg generate more holes after activating, avoids due to not activating Ohmic contact difference being caused to cause chip brightness low
The high situation with voltage.
Plate ITO (the Indium Tin of 120nm under identical process conditions to the first sample and the second sample separately below
Oxides, tin indium oxide metal oxide) layer, the Cr/Pt/Au electrodes of 130nm and the SiO of 50nm2Protective layer, and respectively will place
The first sample and the second sample grinding and cutting after reason are into the core particles of 457 μm * 889 μm (18mi*35mil) and 305 μm * 635 μm
The core particles of (12mi*25mil).Wherein, the first sample is obtained using conventional growth method, and the second sample is using this implementation
What the growing method for the light emitting diode that example provides obtained.
Then the first sample and the same position of the second sample after treatment each selects 200 crystal grain, identical
Under process conditions, white light LEDs are packaged into.It is tested and come under the conditions of driving current 150mA and 120mA respectively using integrating sphere
The crystal grain of first sample and come from the second sample crystal grain photoelectric properties.
The results show that two kinds of crystal grain for coming from the second sample, compared with the crystal grain than coming from the first sample, light intensity is divided
It not being obviously improved under 150mA and 120mA driving currents, backward voltage breakdown capability is significantly raised, and electric leakage is also obviously improved,
This just illustrates that the structure crystal quality of this method growth is preferable, can effectively improve the service life of device.
By setting defect barrier layer between N-type layer and active layer, defect barrier layer is included successively the embodiment of the present invention
The first sublayer and the second sublayer being stacked in N-type layer, the first sublayer include alternately stacked first AlGaN layer and GaN layer, utilize
The characteristic of Al materials reduces long brilliant dislocation and crack, and the GaN integralities for making subsequent growth are preferable, has resistance to the extension of defect
Gear acts on；The Al content in the first AlGaN layer is gradually changed along the direction of growth of LED epitaxial wafer simultaneously, avoids Al as a kind of
The crystalline perfection of impurity effect GaN；Second sublayer include alternately stacked second AlGaN layer and the 3rd AlGaN layer, second
Al content in AlGaN layer is different from the Al content in the 3rd AlGaN layer, can be with staged since the energy rank of Al is higher
Ground improves energy rank and increases impedance, and electric current can effectively be spread.The doping concentration of Si is less than Si in the second sublayer in first sublayer
Doping concentration, be more advantageous to the extension of electronics, electronics made preferably to be distributed in active layer.And first sublayer thickness it is big
In the second sublayer, there is good blocking effect to the extension of defect, be conducive to long crystalline substance.The growth temperature of first sublayer is less than the
The growth temperature of two sublayers, the growth rate that the second sublayer is less than with the growth rate of the first sublayer coordinate, and are also beneficial to follow-up
GaN crystallization.Further, since the radius of the radius ratio Ga atoms of Al atoms is small, surface diffusion length very little, in growth course
Parasitic reaction it is more serious, the growth pressure of AlGaN layer be less than GaN layer growth pressure can reduce to the greatest extent TMAl and NH3 it
Between strong parasitic reaction.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes Sapphire Substrate and is sequentially laminated on
Low temperature buffer layer, high temperature buffer layer in the Sapphire Substrate, N-type layer, active layer, electronic barrier layer, P-type layer, feature
It is, the LED epitaxial slice, which further includes, is layered in barrier layer the defects of between the N-type layer and the active layer, institute
Stating defect barrier layer includes the first sublayer and the second sublayer that are sequentially laminated in the N-type layer, and first sublayer includes handing over
For the first AlGaN layer and GaN layer of stacking, second sublayer includes alternately stacked second AlGaN layer and the 3rd AlGaN
Layer；Al content in first AlGaN layer is gradually changed along the direction of growth of the LED epitaxial slice, and described second
The Al content in Al content and the 3rd AlGaN layer in AlGaN layer remains unchanged, and in second AlGaN layer
Al content is different from the Al content in the 3rd AlGaN layer, and the Al content in second AlGaN layer is less than described first
Al content in AlGaN layer, the Al content in the 3rd AlGaN layer are less than the Al content in first AlGaN layer；It is described
First sublayer is neutralized in second sublayer doped with Si, and the doping concentration of Si is less than the described second son in first sublayer
The doping concentration of Si in layer；The growth pressure of first AlGaN layer, the growth pressure of second AlGaN layer, the described 3rd
The growth pressure of AlGaN layer is respectively less than the growth pressure of the GaN layer；The growth rate of first sublayer is less than described second
The growth rate of sublayer, the growth temperature of first sublayer are less than the growth temperature of second sublayer；First sublayer
Thickness be more than second sublayer thickness.
2. LED epitaxial slice according to claim 1, which is characterized in that the Al content in first sublayer is not
More than twice of the Al content in second sublayer.
3. LED epitaxial slice according to claim 1, which is characterized in that the doping of Si is dense in first sublayer
It spends for 0.2~0.5 times of the doping concentration of Si in second sublayer.
4. LED epitaxial slice according to claim 1, which is characterized in that the growth pressure of first AlGaN layer
Power is 50~150torr, and the growth pressure of second AlGaN layer is 50~150torr, the growth of the 3rd AlGaN layer
Pressure is 50~150torr, and the growth pressure of the GaN layer is 200~350torr.
5. LED epitaxial slice according to claim 1, which is characterized in that the growth temperature of first sublayer is
1040~1060 DEG C, the growth temperature of second sublayer is 1060~1090 DEG C.
6. LED epitaxial slice according to claim 1, which is characterized in that the thickness of first sublayer is 100
~300 angstroms, the thickness of second sublayer is 50~200 angstroms.
7. LED epitaxial slice according to claim 1, which is characterized in that the growth rate of first sublayer is
0.4~0.8 times of the growth rate of second sublayer.
8. a kind of growing method of LED epitaxial slice, which is characterized in that the growing method includes：
Low temperature growth buffer layer on a sapphire substrate；
High temperature buffer layer is grown on the low temperature buffer layer；
N-type layer is grown on the high temperature buffer layer；
The growth defect barrier layer in the N-type layer；
Active layer is grown on the defect barrier layer；
Electronic barrier layer is grown on the active layer；
The growing P-type layer on the electronic barrier layer；
Wherein, the defect barrier layer includes being sequentially laminated on the first sublayer and the second sublayer in the N-type layer, and described first
Sublayer include alternately stacked first AlGaN layer and GaN layer, second sublayer include alternately stacked second AlGaN layer and
3rd AlGaN layer；Al content in first AlGaN layer gradually becomes along the direction of growth of the LED epitaxial slice
To change, the Al content in Al content and the 3rd AlGaN layer in second AlGaN layer remains unchanged, and described second
Al content in AlGaN layer is different from the Al content in the 3rd AlGaN layer, and the Al content in second AlGaN layer is small
Al content in first AlGaN layer, the Al content in the 3rd AlGaN layer are less than in first AlGaN layer
Al content；First sublayer is neutralized in second sublayer doped with Si, and the doping concentration of Si is small in first sublayer
The doping concentration of Si in second sublayer；The growth of the growth pressure of first AlGaN layer, second AlGaN layer
Pressure, the growth pressure of the 3rd AlGaN layer are respectively less than the growth pressure of the GaN layer；The growth speed of first sublayer
Rate is less than the growth rate of second sublayer, and the growth temperature of first sublayer is less than the growth temperature of second sublayer
Degree；The thickness of first sublayer is more than the thickness of second sublayer.
9. growing method according to claim 8, which is characterized in that the Al content in first sublayer is no more than described
Twice of Al content in second sublayer.
10. growing method according to claim 8, which is characterized in that the doping concentration of Si is institute in first sublayer
State the doping concentration of Si in the second sublayer 0.2~0.5 times.
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| CN107331745B (en) * | 2017-05-31 | 2019-05-14 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN108987544B (en) * | 2018-05-31 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109346583B (en) * | 2018-08-31 | 2021-04-27 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109616401B (en) * | 2018-10-17 | 2021-03-02 | 华灿光电(苏州）有限公司 | AlN template, preparation method thereof and light-emitting diode epitaxial wafer |
| CN109904287B (en) * | 2019-01-29 | 2020-07-31 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
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