CN106409732B - A method of realizing that wafer is separated with glass using UV - Google Patents
A method of realizing that wafer is separated with glass using UV Download PDFInfo
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- CN106409732B CN106409732B CN201611051648.7A CN201611051648A CN106409732B CN 106409732 B CN106409732 B CN 106409732B CN 201611051648 A CN201611051648 A CN 201611051648A CN 106409732 B CN106409732 B CN 106409732B
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- wafer
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- realizing
- reflecting films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
The invention discloses a kind of methods separated using UV realization wafer with glass, specifically includes the following steps: protective layer is arranged in glass surface；It realizes that glass merges with the ephemeral key of wafer using bonding glue-line and completes backside of wafer technique；Remove the high temperature resistant protective film and highly reflecting films of glass surface；The separation of glass and wafer is realized using UV dispergation machine.The present invention carries out the processing of bonding glue-line using 365nm routine UV light for realizing the separation of wafer and glass, tears bonding, and separation process no yield loss open to realize, output efficiency greatly improved, reduce production cost, be applicable in batch production process.
Description
Technical field
The present invention relates to microelectronic packaging technology field, especially a kind for the treatment of process of wafer.
Background technique
With the development of semiconductor technology, electronic device becomes small, and integrated level is higher and higher, and the function of including is increasingly
More, the overall performance of device is more and more stronger, thus leads to the production of thin device wafers and being processed into for volume production for thin chip
The trend of ultrathin products industry, but because of its unstability, therefore drawn interim bonding on this basis and torn bonding technology open.
Interim bonding is had the advantage that firstly, carrying wafer and is provided mechanically for thin device wafers with tearing open to be bonded
Support protection, thus back process can be carried out by the equipment of normal component wafer fabrication.For ultra thin device
The process of device wafers grade may be implemented in wafer.Therefore, by being temporarily bonded and tearing open bonding techniques, device wafers are utilized
Every equipment of factory can handle thin device wafers, without conversion unit again, and be not required to special fixture or device
Wafer cassette.
Interim bonding techniques solve the fragment problems in the holding and technical process of thin wafer, but due to wafer separate
When many unstability factors, in wafer separate, there is also very big fragment risks.At the medium of wafer current separation
Reason mode has heat treatment, Zonebond and laser to tear the technology modes such as bonding open, but all haves the defects that certain.Wherein, at heat
Because heating can make, interim bonding body generates certain warpage to reason and certain heat budget considers, cold by many manufacturers
It falls；And Zonebond technology is more popular at present, but a disadvantage is that the pre-soaking time torn open before bonding is longer, and is wasted
More chemical reagent, to affect yield and can not achieve volume production；Laser tears bonding technology open and is now subjected to more concern, but
Equipment cost is higher, and laser energy may be damaged to device wafers, limits the application that laser tears bonding technology open.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of methods realizing wafer and separating with glass, to realize batch
Production, and no yield loss further increase output efficiency, reduce production cost.
In order to solve the above technical problems, the technical solution used in the present invention is as follows.
A method of realizing that wafer is separated with glass using UV, specifically includes the following steps:
A. one layer of highly reflecting films are deposited in glass surface, and attaches one layer on highly reflecting films and protection is formed to glass surface
The high temperature resistant protective film of effect；
B. it realizes that glass is bonded with the interim of wafer using bonding glue-line, and completes backside of wafer technique；
C. the high temperature resistant protective film and highly reflecting films of glass surface are removed；
D. the separation of glass and wafer is realized using UV dispergation machine.
A kind of above-mentioned method for realizing that wafer is separated with glass using UV, highly reflecting films described in step A are metal material
Film, high temperature resistant protective film are yellow glue band.
It is above-mentioned it is a kind of realize the method that separates with glass of wafer using UV, bonding glue-line described in step B is one layer of structure,
Double-layer structure or three-decker.
The bonding glue-line of the three-decker is followed successively by releasing layer, bonded layer and protective layer from bottom to top.
A kind of above-mentioned method for realizing that wafer is separated with glass using UV, UV dispergation machine described in step D are 365nm wavelength
UV dispergation board.
Due to using above technical scheme, the invention technological progress is as follows.
The present invention carries out the processing of bonding glue-line using 365nm routine UV light for realizing the separation of wafer and glass, from
And realize and tear bonding, and separation process no yield loss open, output efficiency greatly improved, reduce production cost, be applicable to
In batch production process.
Detailed description of the invention
Fig. 1 is the schematic diagram that glass surface deposits highly reflecting films and high temperature resistant protective film in step A of the present invention；
Fig. 2 is the schematic diagram that glass slide is temporarily bonded with device wafers in step B of the present invention；
Fig. 3 is that back process integrates schematic diagram in step B of the present invention；
Fig. 4 is the schematic diagram that glass surface protective film and highly reflecting films are removed in step C of the present invention；
Fig. 5 is to carry out the schematic diagram of UV light irradiation in glass surface in step D of the present invention；
Fig. 6 is that present invention completion wafer separates with glass and removes the thin wafer schematic diagram for being bonded glue；
Fig. 7 is flow chart of the invention.
Wherein: 1. glass, 2. highly reflecting films, 3. high temperature resistant protective films, 4. bonding glue-lines, the wiring of 5. front passivator, 6.
Silicon substrate, 7. insulating layers, 8. backside passivation layers, 9. back side salient points, 10.RDL layers.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in further detail.
In the present invention, glass plays the role of carrying and protects device wafers as interim bonding slide glass.
A method of it realizing that wafer is separated with glass using UV, carries out being bonded using UV light and realize after the processing of glue-line and tear open
Bonding, process is as shown in fig. 7, specifically include following steps.
A. one layer of highly reflecting films 2 are deposited on 1 surface of glass, and attaches one layer on highly reflecting films 3 and glass surface is formed
The high temperature resistant protective film 3 of protective effect, as shown in Figure 1.
Highly reflecting films in this step usually select the highly reflecting films of metal material for realizing the high reflection characteristic of glass
Film, naturally it is also possible to be the highly reflecting films of other materials；Highly reflecting films can go out white light emission, avoid white light para-linkage glue
Viscosity generation has an impact.High temperature resistant protective film is used to form protective effect to glass surface, usually selects yellow glue band.
B. it realizes that glass 1 is bonded with the interim of wafer using bonding glue-line 4, and completes backside of wafer technique.Wherein, it is bonded
Glue-line is one layer of structure, double-layer structure or three-decker, and when selecting the bonding glue-line of three-decker, bonding glue-line includes under
Releasing layer, bonded layer and protective layer are followed successively by and.
Wafer be bonded with glass after structure as shown in Fig. 2, wafer mainly include silicon substrate 6 and front passivator wiring 5；
The backside structure of wafer is as shown in figure 3, mainly include RDL layer 10, insulating layer 7, backside passivation layer 8 and back side salient point 9.
C. the high temperature resistant protective film 3 and highly reflecting films 2 for removing glass surface, as shown in figure 4, in order to the UV in step D
Light can be irradiated to bonded interface through glassy layer.
D. the separation of glass and wafer is realized using UV dispergation machine.In this step, the UV light emitted using UV dispergation machine is straight
The surface of irradiation glass removal high temperature resistant protective film and highly reflecting films is connect, as shown in Figure 5；After the irradiation of 30s ~ 5min, glue
The adhesiveness of film and wafer reduces, and glass is just completely separated with wafer, and the wafer after separation is as shown in Figure 6.
In the present invention, UV dispergation machine selects the UV dispergation board of 365nm wavelength, can reduce being separated into for glass and wafer
This, and reliability is higher.
Claims (3)
1. a kind of method for realizing that wafer is separated with glass using UV, which is characterized in that specifically includes the following steps:
A. one layer of highly reflecting films are deposited in glass surface, and attaches one layer on highly reflecting films and protective effect is formed to glass surface
High temperature resistant protective film；
B. it realizes that glass is bonded with the interim of wafer using bonding glue-line, and completes backside of wafer technique；The bonding glue-line is
The bonding glue-line of three-decker, three-decker is followed successively by releasing layer, bonded layer and protective layer from bottom to top；
C. the high temperature resistant protective film and highly reflecting films of glass surface are removed；
D. the separation of glass and wafer is realized using UV dispergation machine.
2. a kind of method for realizing that wafer is separated with glass using UV according to claim 1, which is characterized in that step A
Described in highly reflecting films be metallic material film, high temperature resistant protective film be yellow glue band.
3. a kind of method for realizing that wafer is separated with glass using UV according to claim 1, which is characterized in that step D
Described in UV dispergation machine be 365nm wavelength UV dispergation board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051648.7A CN106409732B (en) | 2016-11-25 | 2016-11-25 | A method of realizing that wafer is separated with glass using UV |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051648.7A CN106409732B (en) | 2016-11-25 | 2016-11-25 | A method of realizing that wafer is separated with glass using UV |
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| Publication Number | Publication Date |
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| CN106409732A CN106409732A (en) | 2017-02-15 |
| CN106409732B true CN106409732B (en) | 2019-09-20 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611075A (en) * | 2017-09-04 | 2018-01-19 | 华进半导体封装先导技术研发中心有限公司 | A kind of interim bonding structure and interim bonding method |
| CN108466474A (en) * | 2018-05-15 | 2018-08-31 | 江苏微纳激光应用技术研究院有限公司 | The separation method of full fitting screen |
| CN111446151A (en) * | 2020-03-27 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for transferring crystal grains to blue film in batches after crystal grains are cut |
| CN112908922A (en) * | 2021-01-28 | 2021-06-04 | 蔡德昌 | Bonding and stripping process for reusable transparent hard carrier and wafer to be thinned |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6982184B2 (en) * | 2001-05-02 | 2006-01-03 | Silverbrook Research Pty Ltd | Method of fabricating MEMS devices on a silicon wafer |
| US9029238B2 (en) * | 2012-10-11 | 2015-05-12 | International Business Machines Corporation | Advanced handler wafer bonding and debonding |
| TWI610374B (en) * | 2013-08-01 | 2018-01-01 | 格芯公司 | Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release |
| US20160133486A1 (en) * | 2014-11-07 | 2016-05-12 | International Business Machines Corporation | Double Layer Release Temporary Bond and Debond Processes and Systems |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
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| CN106409732A (en) | 2017-02-15 |
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