CN112908922A - Bonding and stripping process for reusable transparent hard carrier and wafer to be thinned - Google Patents
Bonding and stripping process for reusable transparent hard carrier and wafer to be thinned Download PDFInfo
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- CN112908922A CN112908922A CN202110120033.XA CN202110120033A CN112908922A CN 112908922 A CN112908922 A CN 112908922A CN 202110120033 A CN202110120033 A CN 202110120033A CN 112908922 A CN112908922 A CN 112908922A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
The invention discloses a bonding and stripping process of a reusable transparent hard carrier and a wafer to be thinned, which comprises the following steps: s1, adhering the transparent hard carrier and the front side of the wafer to be thinned by using light-cured resin glue; s2, thinning and grinding the back of the wafer; s3, peeling the transparent hard carrier from the thinned wafer; s4, removing the light-cured resin protective layer on the front side of the thinned wafer; s5, recycling and cleaning the used transparent hard carrier; s6, uniformly coating the cleaned transparent hard carrier on the bonding surface of the carrier and the wafer by using light-cured resin glue, and then reusing the carrier. The invention adopts the transparent hard carrier to be attached in a fully automatic unmanned workshop with a dust-free room of 1-1000 grade to improve the stability of the wafer during thinning and grinding, so that the wafer is not easy to break during grinding, and the wafer can not break when being peeled off after thinning and grinding, and the carrier after being used is recycled and cleaned for reuse.
Description
Technical Field
The invention belongs to the field of fixed attaching processes before thinning and grinding of a wafer, and particularly relates to an attaching and stripping process of a reusable transparent hard carrier and a wafer to be thinned.
Background
The demands of third generation semiconductor materials, such as insulated high power semiconductor components and consumer electronics, are directed to smaller and higher performance device architectures, and in response to satisfying these demands, demands for the fabrication of ultra-thin wafers are being met, for example, in the group of devices made of 6 "to 12" semiconductor materials, such as Insulated Gate Bipolar Transistors (IGBT), gallium nitride (GaN), and silicon carbide (SiC), which use silicon (Si) as a substrate, and if the wafers are required to be thinned to a thickness of less than 100 μm after mass production, stable grinding support is very important in the fabrication process, but the demands and difficulties of the fabrication equipment are very high in the face of ultra-thin, large-area, and highly brittle wafers. The wafer thinning technique is commonly used to attach a soft adhesive tape to the front surface of an etched wafer, perform back grinding and polishing thinning processes to a desired thickness, and remove the soft adhesive tape from the front surface of the wafer after grinding.
Since thin wafers are susceptible to stress during the thinning process, the weak support and orientation loss are prone to deformation cracking or warping during the polishing process, which occurs during lapping and results in wafer cracking. The problem of damage of the ground wafer not only increases the production and processing cost, but also brings great difficulties and troubles to the whole processing flow, so that a bonding and stripping process of a reusable transparent hard carrier and the wafer to be thinned is provided.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a bonding and stripping process of a reusable transparent hard carrier and a wafer to be thinned.
In order to achieve the purpose, the invention provides the following technical scheme:
a process for attaching and detaching a reusable transparent hard carrier to a wafer to be thinned comprises the following steps in a fully automatic unmanned and clean room workshop of 1-1000 level:
s1, the transparent hard carrier is bonded with the front surface of the wafer to be thinned by light-cured resin glue, the transparent hard carrier (which refers to a glass sheet or a quartz plate with the thickness of about 1mm and the light transmittance of more than 80%) is bonded with the front surface of the wafer (which refers to a wafer made of semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and the like, the front surface of which is metalized, the thickness of which is more than 100 mu m, and the diameter of which is 6-12 "). The transparent hard carrier is described by taking a glass sheet as an example, the glass sheet carrier is fixedly attached to the front surface of a wafer through light-cured resin glue (ultraviolet light-cured resin such as Acrylic resin (Acrylic acid Polymers)) and is light-cured by a UV (ultraviolet) lamp (the wavelength is below 400 nm), a protective layer is formed on the front surface of the wafer after curing, the average thickness (TTV) of the surfaces of the glass sheet and the wafer can be within 10um, the concentric circle precision can be within 10um, and the notch unfilled corner of the wafer must be attached to the notch of the glass sheet at the same position;
s2, thinning and grinding the back of the wafer, mounting the wafer firmly attached with the glass sheet on thinning and grinding equipment (CMP) for thinning and grinding the back of the wafer, wherein the final thickness of the wafer after grinding can reach 45-100 um at least without cracking;
s3, peeling the thinned wafer from the transparent hard carrier, and peeling the thinned and ground glass sheet and the front side of the wafer by laser irradiation (with the wavelength of 355-1064 nm) peeling equipment, wherein the laser penetrates through the transparent glass to dissociate the attached light-cured resin (polymethyl methacrylate resin (PMMA) with photo-thermal conversion, acrylic polymer and the like) on the back side of the glass, and the thinned and fragile wafer and the glass sheet can be peeled after the laser dissociation;
s4, removing the light-cured resin protective layer of the thinned wafer, and removing the light-cured resin protective layer on the surface of the thinned fragile wafer by light-cured resin protective layer removing equipment;
s5, recycling and cleaning the used transparent hard carrier, and cleaning the residual light-cured resin adhered to the surface of the glass sheet by a cleaning machine;
s6, after the washed transparent hard carrier is evenly coated on the joint surface of the carrier and the wafer by the light-cured resin glue and is subjected to UV light curing, the carrier can be reused.
Preferably, when the laser irradiation stripping apparatus fixes the glass sheet and the wafer in step S3, the single glass sheet and the front surface of the wafer are combined into a wafer sheet set by adding a fixed frame to the UV ultraviolet tape, and the wafer sheet set includes two combination modes of adding a fixed frame to the UV ultraviolet tape and no fixed frame.
Preferably, when the laser irradiation stripping equipment is provided with a wafer group with a UV (ultraviolet) adhesive tape and a fixed frame, the wafer group installation component comprises an upper frame suction group, a fixed frame bottom positioning device 4 group, a fixed frame bottom suction device 4 group, a fixed frame bar code acquisition instrument and a wafer position detection instrument, and the upper frame suction group comprises a theta axis, a Z axis and a fixed frame suction nozzle 4 group.
Preferably, when the laser irradiation stripping equipment is used for installing a wafer group without a fixed frame, the wafer group installation component comprises a vacuum chuck, a theta axis and a height difference measuring instrument for thinned and non-thinned areas at the bottom of the wafer.
Preferably, when the laser irradiation stripping equipment is provided with a UV ultraviolet adhesive tape for reinforcing the fixed frame wafer sheet set, the action flow of the positioning mechanism and the assembly installation is as follows:
1) placing the wafer sheet group with the UV ultraviolet adhesive tape and the fixed frame on a gas suction device at the bottom of the fixed frame of the mounting assembly for vacuum adsorption;
2) the fixed frame bottom positioning device moves in a single direction, and the fixed frame bottom suction device releases vacuum at the moment to perform centering positioning on the fixed frame product;
3) positioning and resetting, namely, moving the upper frame suction group downwards, adsorbing the fixed frame, sucking and lifting the fixed frame, rotating the fixed frame according to a set angle, then moving the fixed frame downwards to the bottom, recording a numerical value by a position measuring instrument at the bottom, sequentially lifting, rotating and moving downwards, and when the 360-degree operation is finished, calculating the position of the wafer group, and finishing the acquisition of the bar codes of the fixed frame;
4) and the compensation mechanical arm moves to the moving position of the next station.
Preferably, when the laser irradiation stripping device is used for installing a wafer group without a fixed frame, the action flows of the positioning mechanism and the installation component are as follows:
1) the mechanical arm puts the product on a sucker of the positioning mechanism for vacuum adsorption;
2) rotating the theta axis and measuring the height difference of the thinned and non-thinned areas at the bottom of the wafer;
3) and the compensation mechanical arm moves to the moving position of the next station.
Preferably, the laser irradiation stripping device strips the wafer sheet group with the UV tape fixing frame on the laser chuck and removes the glass by the specific steps of:
1) the mechanical arm is used for clamping a wafer sheet group with a UV (ultraviolet) adhesive tape and a fixing frame from a positioning mechanism to a laser irradiation operation sucker, four groups of lifting mechanisms on the sucker can ascend, after an outer frame is in place, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is placed on the lifting mechanisms, after the completion, the mechanical arm can return, the lifting mechanisms move downwards, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is flatly attached to the sucker, the sucker starts to vacuumize at the moment, a laser irradiation air exhaust protective cover can descend to the position of the outer frame, the outer frame is pressed, the outer frame vacuum is opened, and the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is adsorbed on the sucker;
2) starting to execute laser irradiation, and irradiating laser in a spot shape, a line shape and a plane shape to dissociate a light release layer below the glass;
3) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
4) the glass sheet removing device is downward, two or more groups of soft suckers are attached to the glass, vacuum suction is started, and the glass is sucked up by matching with a sensor for detecting the existence or nonexistence of the glass and an X, Y shaft with an oblique angle;
5) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by the mechanical arm special for the glass and sent into the material box.
Preferably, the specific steps of the laser irradiation stripping device for stripping the wafer sheet group without the fixed frame on the laser chuck and removing the glass are as follows:
1) the mechanical arm sucks the wafer group downwards from the upper part of the glass from the positioning mechanism, and the compensation displacement from the mechanical arm to the laser irradiation operation sucker is provided through the position of the wafer obtained by the positioning mechanism;
2) when the wafer group is placed on the sucking disc, the sucking disc with the area of the inner edge of the sucking disc ascends, the ascending height is according to the height difference between the thinned thickness and the non-thinned height measured by the positioning mechanism, the sucking disc with the area of the inner edge represents the area of the thinned area, the sucking disc with the area of the outer edge represents the area of the non-thinned area, the two inner sucking discs and the two outer sucking discs are opened simultaneously in vacuum, no gap exists between the sucking disc and the wafer, the breakage caused by the peeling of glass and the tearing of wafer glue is avoided, and the mechanical arm moves away and resets;
3) descending a laser irradiation extraction hood, coating the wafer group, starting to execute laser irradiation operation, and dissociating a light release layer below the glass in a spot, line and surface laser irradiation output light spot shape;
4) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
5) the glass sheet removing device is downward, two or more groups of soft suckers are attached to the glass, vacuum suction is started, and the glass is sucked up by moving along an X, Y shaft at an oblique angle;
6) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by a mechanical arm special for the glass and is sent into the material box;
7) after the glass is sucked, the laser irradiation operation sucker is driven by the 180-degree motor gear slide rail set to transfer the wafer product to the next station.
Preferably, the equipment for removing the protective layer of the light-cured resin in the step S4 includes a roller set and a moving mechanism, wherein the roller set includes an adhesive tape for adhering the protective layer of the wafer, a roller set for supporting the tension of the adhesive tape, and a weight block; the movement mechanism comprises an X-axis servo motor, a theta-axis servo motor, a Z-axis servo motor, a slide rail and a lead screw group.
Preferably, the specific removing process for removing the light-cured resin protective layer comprises the following steps: the removal action of the light-cured resin protective layer is the same in the wafer group with the frame and the wafer group without the frame, but after the light-cured resin protective layer is finally removed, the wafer group with the frame can be positioned and calibrated once more, the wafer group without the frame is directly sent to a material box in a boldly effort effect mode, and the specific removal flow of the light-cured resin protective layer is as follows:
1) the coordinate mark drives the adhesive tape with the Z axis downward, the X axis forward and the theta axis, the Z axis reaches the starting point of the edge of the wafer, the wafer protective layer on the adhesive tape is adhered in an adhesive tape rolling mode, and the area of the removed protective layer on the adhesive tape is checked to see whether the pattern is complete or not in a CCD (charge coupled device) detection mode;
2) the X-axis moves forward and matches with the upper and lower heights of the Z-axis according to the thickness of the wafer measured by the positioning mechanism and the manually measured flatness value before the sucker works so as to compensate the flatness;
3) removing a wafer protective layer, rotating a sucker for 180 degrees, downwards an air exhaust cover, removing the vacuum of the sucker, sucking an outer frame product upwards by eight groups of suction nozzles at the outer edge of the air exhaust cover, clamping the outer frame product by a mechanical arm, sending the outer frame product to a positioning mechanism, positioning the outer frame product, and clamping the outer frame product by the mechanical arm to return to a material box after the outer frame product is positioned;
4) and removing the wafer protective layer, moving the frameless product to the position above the product by using a mechanical arm with a Bernoulli effect function, suspending the product in the middle of the mechanical arm by using Bernoulli effect gas, and returning the outer frame product to the material box by using the mechanical arm after the removal of the wafer protective layer is finished.
The invention has the technical effects and advantages that: compared with the traditional laminating and peeling process, the laminating and peeling process of the reusable transparent hard carrier and the wafer to be thinned has the advantages that the stability of the wafer in the process of thinning and grinding is improved by adopting the laminating of the transparent hard carrier in a 1-1000-level dust-free chamber workshop in a fully-automatic and unmanned manner, the wafer is not easy to break in the process of grinding, the breakage of the wafer can not occur in the process of peeling the transparent hard carrier and the wafer when the laminated and solidified resin is dissociated by laser after thinning and grinding, the used transparent hard carrier can be recycled and cleaned and then reused, and compared with the traditional adhesive tape laminating and peeling mode, the product yield, the production efficiency and the cost of the wafer in the final processing procedure can be greatly improved by the process.
Drawings
FIG. 1 is a flow chart of the bonding and peeling process of the wafer to be thinned using a reusable transparent rigid carrier according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a bonding and stripping process of a reusable transparent hard carrier and a wafer to be thinned as shown in figure 1, which is characterized by comprising the following steps:
s1, the transparent hard carrier is bonded with the front surface of the wafer to be thinned by light-cured resin glue, the transparent hard carrier (which refers to a glass sheet or a quartz plate with the thickness of about 1mm and the light transmittance of more than 80%) is bonded with the front surface of the wafer (which refers to a wafer made of semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and the like, the front surface of which is metalized, the thickness of which is more than 100 mu m, and the diameter of which is 6-12 "). The transparent hard carrier is described by taking a glass sheet as an example, the glass sheet carrier is fixedly attached to the front surface of a wafer through light-cured resin glue (ultraviolet light-cured resin such as Acrylic resin (Acrylic acid Polymers)) and is light-cured by a UV (ultraviolet) lamp (the wavelength is below 400 nm), a protective layer is formed on the front surface of the wafer after curing, the average thickness (TTV) of the surfaces of the glass sheet and the wafer can be within 10um, the concentric circle precision can be within 10um, and the notch unfilled corner of the wafer must be attached to the notch of the glass sheet at the same position;
s2, thinning and grinding the back of the wafer, mounting the wafer firmly attached with the glass sheet on thinning and grinding equipment (CMP) for thinning and grinding the back of the wafer, wherein the final thickness of the wafer after grinding can reach 45-100 um at least without cracking;
s3, peeling the thinned wafer from the transparent hard carrier, and peeling the thinned wafer from the glass sheet by using laser irradiation peeling equipment;
when the front surfaces of the glass sheet and the wafer are fixed by the laser irradiation stripping equipment in the step S3, the glass sheet and the wafer group are combined into a wafer sheet group through an ultraviolet adhesive tape, and the wafer sheet group comprises a fixed frame and a non-fixed frame;
when the laser irradiation stripping equipment is provided with a wafer group of a UV (ultraviolet) adhesive tape and a fixed frame, a wafer group mounting assembly of the laser irradiation stripping equipment consists of an upper frame suction group, a fixed frame bottom positioning device 4 group, a fixed frame bottom suction device 4 group, a fixed frame bar code acquisition instrument and a wafer position detection instrument, wherein the upper frame suction group comprises a theta axis, a Z axis and a fixed frame suction nozzle 4 group;
when the laser irradiation stripping equipment is provided with a wafer group of a fixed frame, a wafer group mounting assembly of the laser irradiation stripping equipment comprises a vacuum chuck, a theta axis and a height difference measuring instrument of a thinned region and a non-thinned region at the bottom of a wafer;
when the laser irradiation stripping equipment is provided with a UV ultraviolet adhesive tape reinforcing fixed frame wafer piece group, the action flow of the positioning mechanism and the mounting assembly is as follows:
1) placing the wafer sheet group with the UV adhesive tape and the fixed frame on a gas suction device at the bottom of the fixed frame of the mounting assembly for vacuum adsorption;
2) the fixed frame bottom positioning device moves in a single direction, and the fixed frame bottom suction device releases vacuum at the moment to perform centering positioning on the fixed frame product;
3) positioning and resetting, namely, moving the upper frame suction group downwards, adsorbing the fixed frame, sucking and lifting the fixed frame, rotating the fixed frame according to a set angle, then moving the fixed frame downwards to the bottom, recording a numerical value by a position measuring instrument at the bottom, sequentially lifting, rotating and moving downwards, and when the 360-degree operation is finished, calculating the distance of the wafer group and finishing the acquisition of the bar codes of the fixed frame;
4) the compensation mechanical arm moves to the moving position of the next station;
when the laser irradiation stripping equipment is used for installing a wafer group without a fixed frame, the action flow of the positioning mechanism and the installation assembly is as follows:
1) the mechanical arm puts the product on a sucker of the positioning mechanism for vacuum adsorption;
2) rotating the theta axis and measuring the height difference of the thinned and non-thinned areas at the bottom of the wafer;
3) the compensation mechanical arm moves to the moving position of the next station;
the laser irradiation stripping equipment strips the wafer sheet group with the UV ultraviolet adhesive tape and the fixed frame, and the specific steps of the laser and the glass removal are as follows:
1) the mechanical arm is used for clamping a wafer sheet group with a UV (ultraviolet) adhesive tape and a fixing frame from a positioning mechanism to a laser irradiation operation sucker, four groups of lifting mechanisms on the sucker can ascend, after an outer frame is in place, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is placed on the lifting mechanisms, after the completion, the mechanical arm can return, the lifting mechanisms move downwards, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is flatly attached to the sucker, the sucker starts to vacuumize at the moment, a laser irradiation air exhaust protective cover can descend to the position of the outer frame, the outer frame is pressed, the outer frame vacuum is opened, and the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is adsorbed on the sucker;
2) starting to execute laser irradiation, and irradiating laser in a spot shape, a line shape and a plane shape to dissociate a light release layer below the glass;
3) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
4) the glass sheet removing device is downward, two or more groups of soft suckers are attached to the glass, vacuum suction is started, and the glass is sucked up by matching with a sensor for detecting the existence or nonexistence of the glass and an X, Y shaft with an oblique angle;
5) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by a mechanical arm special for the glass and is sent into the material box;
the laser irradiation stripping equipment strips the wafer piece group without the fixed frame, and the specific steps of laser and glass removal are as follows:
1) the mechanical arm sucks the wafer group downwards from the upper part of the glass from the positioning mechanism, and the compensation displacement from the mechanical arm to the laser irradiation operation sucker is provided through the position of the wafer obtained by the positioning mechanism;
2) when the wafer group is placed on the sucking disc, the sucking disc with the area of the inner edge of the sucking disc ascends, the ascending height is according to the height difference between the thinned thickness and the non-thinned height measured by the positioning mechanism, the sucking disc with the area of the inner edge represents the area of the thinned area, the sucking disc with the area of the outer edge represents the area of the non-thinned area, the two inner sucking discs and the two outer sucking discs are opened simultaneously in vacuum, no gap exists between the sucking disc and the wafer, the breakage is avoided when the glass is stripped and the light-cured resin on the front surface of the wafer is torn off, and then the mechanical arm is moved;
3) descending a laser irradiation extraction hood, coating the wafer group, starting to execute laser irradiation operation, and dissociating a light release layer below the glass in a spot, line and surface laser irradiation output light spot shape;
4) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
5) the glass sheet removing device is downward, matched with a sensor for detecting the presence or absence of glass, attached to the glass by two or more groups of soft suckers, started to vacuum and moved by matching with an X, Y shaft at an oblique angle to suck the glass;
6) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by a mechanical arm special for the glass and is sent into the material box;
7) after the glass sheet is sucked, the laser irradiation operation sucker is driven by a 180-degree motor gear slide rail set to transfer the wafer product to the next station;
s4, removing the light-cured resin protective layer on the front surface of the thinned wafer, and removing the light-cured resin protective layer on the front surface of the thinned fragile wafer through light-cured resin protective layer removing equipment;
the light-cured resin protective layer removing equipment in the step S4 comprises a roller set and a moving mechanism, wherein the roller set comprises an adhesive tape for removing the front protective layer of the wafer, a roller set for supporting the tension of the adhesive tape and a balancing weight; the movement mechanism comprises an X-axis servo motor, a theta-axis servo motor, a Z-axis servo motor, a slide rail and a screw rod group;
the removal action of the light-cured resin protective layer is the same in the wafer group with the frame and the wafer group without the frame, but after the light-cured resin protective layer is finally removed, the wafer group with the frame can be positioned and calibrated once more, the wafer group without the frame is directly sent to a material box in a boldly effort effect mode, and the specific removal flow of the light-cured resin protective layer is as follows:
1) the coordinate mark drives the adhesive tape with the Z axis downward, the X axis forward and the theta axis, the Z axis reaches the starting point of the edge of the wafer, the front protective layer of the wafer is adhered in a tape rolling mode, and the wafer protective layer on the adhesive tape can see the area of the removed protective layer on the adhesive tape in a CCD (charge coupled device) detection mode to see whether the pattern is complete or not;
2) the X-axis moves forward and matches with the upper and lower heights of the Z-axis according to the thickness of the wafer measured by the positioning mechanism and the manually measured flatness value before the sucker works so as to compensate the flatness;
3) removing the front protective layer of the wafer, rotating the sucker for 180 degrees for the product with the frame, enabling the suction hood to face downwards, relieving the vacuum of the sucker, sucking the outer frame product by eight groups of suction nozzles at the outer edge of the suction hood, clamping the outer frame product by the mechanical arm, sending the outer frame product to a positioning mechanism, positioning the outer frame product, and clamping the outer frame product by the mechanical arm to return to the material box after the outer frame product is positioned;
4) removing the front protective layer of the wafer, moving a mechanical arm with a Bernoulli function to the position above the product of the frameless product, suspending the product in the middle of the mechanical arm by utilizing gas suspension, and returning the outer frame product to the material box by the mechanical arm after the removal is finished;
s5, recycling and cleaning the used transparent hard carrier, and cleaning the residual light-cured resin adhered to the surface of the glass sheet by a cleaning machine;
s6, after the washed transparent hard carrier is evenly coated on the joint surface of the carrier and the wafer by the light-cured resin glue and is subjected to UV light curing, the carrier can be reused.
In summary, the following steps: compared with the traditional tape bonding process, the bonding and stripping process of the reusable transparent hard carrier and the wafer to be thinned automatically bonds the front surface of the wafer (the wafer refers to the wafer which is made of semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and the like and has the front metallization, the thickness of which is more than 100 mu m and the diameter of which is 6-12') to the front surface of the wafer through the hard carrier such as a glass sheet or a quartz plate (the glass sheet or the quartz plate with the thickness of about 1mm and the light transmittance of more than 80%) and the wafer in a 1-1000-level dust-free chamber workshop, so that the stability of the wafer in the process of thinning and grinding (CMP) is improved, and the final thickness size of the wafer after thinning and grinding can reach 45-100 mu m at least without cracking. After thinning and grinding the wafer, using laser to irradiate a separating device for automatically peeling the glass carrier and the wafer and automatically collecting the glass carrier, and cleaning the separated glass carrier again, smearing light-cured resin glue again on the binding surface, and curing by UV light, so that the glass carrier can be reused.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (10)
1. A process for attaching and detaching a reusable transparent hard carrier to a wafer to be thinned is characterized by comprising the following steps of:
s1, a transparent hard carrier is bonded with the front surface of the wafer to be thinned by light-cured resin glue, the transparent hard carrier (which refers to a glass sheet or a quartz plate with the thickness of about 1mm and the light transmittance of more than 80%) is bonded with the front surface of the wafer (which refers to a wafer made of semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN) and the like, the front surface of which is metallized, the thickness of which is more than 100 mu m and the diameter of which is 6-12 "), the transparent hard carrier is described by taking the glass sheet as an example, the glass sheet carrier and the front surface of the wafer are bonded and fixed by light-cured resin glue (ultraviolet light-cured resin such as Acrylic resin (Acrylic acid Polymers) and the like) and are photocured by a UV (wavelength of less than 400 nm), a protective layer is formed on the front surface of the wafer after curing, the average thickness (TTV) of the glass sheet and the wafer can be realized within 10 mu m, the concentric circle precision can be realized within 10um, and the notch unfilled corner of the wafer must be attached to the notch of the glass sheet at the same position;
s2, thinning and grinding the back of the wafer, mounting the wafer firmly attached with the glass sheet on thinning and grinding equipment (CMP) for thinning and grinding the back of the wafer, wherein the final thickness of the wafer after grinding can reach 45-100 um at least without cracking;
s3, peeling the thinned wafer from the transparent hard carrier, and peeling the thinned and ground glass sheet and the front side of the wafer by laser irradiation (with the wavelength of 355-1064 nm) peeling equipment, wherein the laser penetrates through the transparent glass to dissociate the attached light-cured resin (polymethyl methacrylate resin (PMMA) with photo-thermal conversion, acrylic polymer and the like) on the back side of the glass, and the thinned and fragile wafer and the glass sheet can be peeled after the laser dissociation;
s4, removing the light-cured resin protective layer on the front side of the thinned wafer, and removing the light-cured resin protective layer on the front side of the thinned fragile wafer through light-cured resin protective layer removing equipment;
s5, recycling and cleaning the used transparent hard carrier, and cleaning the residual light-cured resin adhered to the surface of the glass sheet by a cleaning machine;
s6, after the washed transparent hard carrier is evenly coated on the joint surface of the carrier and the wafer by the light-cured resin glue and is subjected to UV light curing, the carrier can be reused.
2. The bonding and debonding process for a reusable transparent rigid carrier and a wafer to be thinned according to claim 1, wherein: when the laser irradiation stripping equipment fixes the front surfaces of the glass sheet and the wafer in the step S3, the single glass sheet and the wafer are combined into a wafer sheet set by adding a fixed frame through a UV ultraviolet adhesive tape, and the wafer sheet set comprises two combination modes of the UV ultraviolet adhesive tape and the fixed frame and no fixed frame.
3. The bonding and debonding process for a reusable transparent rigid carrier and a wafer to be thinned according to claim 2, wherein: when the laser irradiation stripping equipment is provided with a wafer group of a UV (ultraviolet) adhesive tape and a fixed frame, a wafer group mounting assembly of the laser irradiation stripping equipment consists of an upper frame suction group, a fixed frame bottom positioning device 4 group, a fixed frame bottom suction device 4 group, a fixed frame bar code acquisition instrument and a wafer position detection instrument, wherein the upper frame suction group comprises a theta axis, a Z axis and a fixed frame suction nozzle 4 group.
4. The bonding and debonding process for a reusable transparent rigid carrier and a wafer to be thinned according to claim 2, wherein: when the laser irradiation stripping equipment is used for installing a wafer group without a fixed frame, the wafer group installation component comprises a vacuum chuck, a theta axis and a height difference measuring instrument for thinned and non-thinned areas at the bottom of the wafer.
5. The bonding and debonding process between a reusable transparent rigid carrier and a wafer to be thinned according to claim 3, wherein: when the laser irradiation stripping equipment is provided with the UV ultraviolet adhesive tape for reinforcing the fixed frame wafer sheet set, the action flows of the positioning mechanism and the mounting assembly are as follows:
1) placing the wafer sheet group with the UV ultraviolet adhesive tape and the fixed frame on a gas suction device at the bottom of the fixed frame of the mounting assembly for vacuum adsorption;
2) the fixed frame bottom positioning device moves in a single direction, and the fixed frame bottom suction device releases vacuum at the moment to perform centering positioning on the fixed frame product;
3) positioning and resetting, namely, moving the upper frame suction group downwards, adsorbing the fixed frame, sucking and lifting the fixed frame, rotating the fixed frame according to a set angle, then moving the fixed frame downwards to the bottom, recording a numerical value by a position measuring instrument at the bottom, sequentially lifting, rotating and moving downwards, and when the 360-degree operation is finished, calculating the distance of the wafer group and finishing the acquisition of the bar codes of the fixed frame;
4) and the compensation mechanical arm moves to the moving position of the next station.
6. The process of claim 4, wherein the bonding and peeling process comprises: when the laser irradiation stripping equipment is used for installing a wafer group without a fixed frame, the action flows of the positioning mechanism and the installation assembly are as follows:
1) the mechanical arm puts the product on a sucker of the positioning mechanism for vacuum adsorption;
2) rotating the theta axis and measuring the height difference of the thinned and non-thinned areas at the bottom of the wafer;
3) and the compensation mechanical arm moves to the moving position of the next station.
7. The bonding and debonding process between a reusable transparent rigid carrier and a wafer to be thinned according to claim 5, wherein: the laser irradiation stripping equipment strips the wafer sheet group with the UV ultraviolet adhesive tape fixing frame, and the laser and glass removing mechanism comprises the following specific steps:
1) the mechanical arm is used for clamping a wafer sheet group with a UV (ultraviolet) adhesive tape and a fixing frame from a positioning mechanism to a laser irradiation operation sucker, four groups of lifting mechanisms on the sucker can ascend, after an outer frame is in place, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is placed on the lifting mechanisms, after the completion, the mechanical arm can return, the lifting mechanisms move downwards, the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is flatly attached to the sucker, the sucker starts to vacuumize at the moment, a laser irradiation air exhaust protective cover can descend to the position of the outer frame, the outer frame is pressed, the outer frame vacuum is opened, and the wafer sheet group with the UV ultraviolet adhesive tape and the fixing frame is adsorbed on the sucker;
2) starting to execute laser irradiation, and irradiating laser in a spot shape, a line shape and a plane shape to dissociate a light release layer below the glass;
3) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
4) the glass sheet removing device is downward, two or more groups of soft suckers are attached to the glass, vacuum suction is started, and the glass is sucked up by matching with a sensor for detecting the existence or nonexistence of the glass and an X, Y shaft with an oblique angle;
5) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by the mechanical arm special for the glass and sent into the material box.
8. The process of claim 4, wherein the bonding and peeling process comprises: the laser irradiation stripping equipment strips the wafer sheet group without the fixed frame, and the laser and glass removing mechanism comprises the following specific steps:
1) the mechanical arm sucks the wafer group downwards from the upper part of the glass from the positioning mechanism, and the compensation displacement from the mechanical arm to the laser irradiation operation sucker is provided through the position of the wafer obtained by the positioning mechanism;
2) when the wafer group is placed on the sucking disc, the sucking disc with the area of the inner edge of the sucking disc ascends, the ascending height is according to the height difference between the thinned thickness and the non-thinned height measured by the positioning mechanism, the sucking disc with the area of the inner edge represents the area of the thinned area, the sucking disc with the area of the outer edge represents the area of the non-thinned area, the two inner sucking discs and the two outer sucking discs are opened simultaneously in vacuum, no gap exists between the sucking disc and the wafer, the breakage is avoided when the glass is stripped and the light-cured resin on the front surface of the wafer is torn off, and then the mechanical arm is moved;
3) descending a laser irradiation extraction hood, coating the wafer group, starting to execute laser irradiation operation, and dissociating a light release layer below the glass in a spot, line and surface laser irradiation output light spot shape;
4) after the laser irradiation is finished, the air exhaust cover is upward, and the glass sheet removing device is rotated to be above the sucking disc for the laser irradiation operation;
5) the glass sheet removing device is downward, two or more groups of soft suckers are attached to the glass, vacuum suction is started, and the glass is sucked up by moving along an X, Y shaft at an oblique angle;
6) after the glass is sucked up, the glass sheet removing device is rotated and reset, the glass is placed on the collecting area, and the glass is sucked by a mechanical arm special for the glass and is sent into the material box;
7) after the glass is sucked, the laser irradiation operation sucker is driven by the 180-degree motor gear slide rail set to transfer the wafer product to the next station.
9. The bonding and debonding process for a reusable transparent rigid carrier and a wafer to be thinned according to claim 1, wherein: the equipment for removing the light-cured resin protective layer in the step S4 comprises a roller set and a moving mechanism, wherein the roller set comprises an adhesive tape for removing the front protective layer of the wafer, a roller set for supporting the tension of the adhesive tape and a balancing weight; the movement mechanism comprises an X-axis servo motor, a theta-axis servo motor, a Z-axis servo motor, a slide rail and a lead screw group.
10. The process of claim 9, wherein the bonding and peeling process comprises: the specific removing process for removing the light-cured resin protective layer comprises the following steps:
1) the coordinate position marks are downward along the Z axis, the adhesive tape is driven along the X axis and the theta axis, the front protective layer of the wafer is adhered by the Z axis to the starting point of the edge of the wafer in an adhesive tape rolling mode, and the area of the removed protective layer on the adhesive tape is checked to see whether the pattern is complete or not in a CCD (charge coupled device) detection mode by the front protective layer of the wafer on the adhesive tape;
2) the X-axis moves forward and matches with the upper and lower heights of the Z-axis according to the front thickness of the wafer measured by the positioning mechanism and the manually measured flatness value before the sucker works so as to compensate the flatness;
3) removing a front protective layer of the wafer, rotating a sucker for 180 degrees for a product with a UV (ultraviolet) adhesive tape fixing frame, downwards an air exhaust cover, relieving the vacuum of the sucker, sucking an outer frame product upwards by eight groups of suction nozzles at the outer edge of the air exhaust cover, clamping the outer frame by a mechanical arm, sending the outer frame product to a positioning mechanism, positioning the outer frame product, and clamping the outer frame product by the mechanical arm to return to a material box after the completion;
4) and removing the front protective layer of the wafer, moving the frameless product to the position above the product by using a mechanical arm with a Bernoulli effect function, sucking and suspending the product in the middle of the mechanical arm by using Bernoulli effect gas, and returning the outer frame product to the material box by using the mechanical arm after the removal is finished.
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| US20100041211A1 (en) * | 2002-06-03 | 2010-02-18 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
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