CN106409732B - 一种利用uv实现晶圆与玻璃分离的方法 - Google Patents

一种利用uv实现晶圆与玻璃分离的方法 Download PDF

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CN106409732B
CN106409732B CN201611051648.7A CN201611051648A CN106409732B CN 106409732 B CN106409732 B CN 106409732B CN 201611051648 A CN201611051648 A CN 201611051648A CN 106409732 B CN106409732 B CN 106409732B
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CN106409732A (zh
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李昭强
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National Center for Advanced Packaging Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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Abstract

本发明公开了一种利用UV实现晶圆与玻璃分离的方法，具体包括以下步骤：在玻璃表面设置保护层；利用键合胶层实现玻璃与晶圆的临时键合并完成晶圆背面工艺；去除玻璃表面的耐高温保护膜及高反射膜；利用UV解胶机实现玻璃与晶圆的分离。本发明用于实现晶圆与玻璃的分离，利用365nm常规UV光进行键合胶层的处理，从而实现拆键合，且分离过程无良率损失，大幅提高了产出效率，降低了生产成本，可适用于批量生产过程中。

Description

一种利用UV实现晶圆与玻璃分离的方法
技术领域
本发明涉及微电子封装技术领域，特别是一种晶圆的处理工艺。
背景技术
随着半导体技术的发展，电子器件越做越小，集成度越来越高，包含的功能越来越多，器件的整体性能越来越强，由此导致薄器件晶圆的生产以及薄芯片的处理成为了量产超薄产品工业的趋势，但因为其不稳定性，故在此基础上引出了临时键合和拆键合工艺。
临时键合与拆键合具有如下优势：首先，承载片晶圆为薄器件晶圆提供了机械上的支持保护，这样就可以通过标准器件晶圆制造厂的设备来进行背面工艺。对于超薄器件晶圆，可以实现器件晶圆级的工艺处理。因此，通过临时键合和拆键合技术，利用器件晶圆厂的每台设备都能够处理薄器件晶圆，而无需重新改装设备，而且不需特殊的夹具或器件晶圆盒。
临时键合技术解决了薄晶圆的拿持和工艺过程中的碎片问题，但是由于晶圆分离时的很多不稳定性因素，在晶圆分离时也存在着很大的碎片风险。目前晶圆分离的介质处理方式有热处理、Zonebond和激光拆键合等工艺方式，但是都存在一定的缺陷。其中，热处理因为加热会使临时键合体产生一定的翘曲以及一定的热预算考虑，因此被很多厂商冷落；而Zonebond技术是目前较受欢迎的，但是缺点是拆键合前的预浸泡时间较长，而且浪费较多的化学试剂，从而影响了产率而不能实现量产；激光拆键合工艺目前受到较多关注，但设备成本较高，且激光能量可能会损伤到器件晶圆，限制了激光拆键合工艺的应用。
发明内容
本发明需要解决的技术问题是提供一种实现晶圆与玻璃分离的方法，以实现批量生产，且无良率损失，进一步提高产出效率，降低生产成本。
为解决上述技术问题，本发明所采取的技术方案如下。
一种利用UV实现晶圆与玻璃分离的方法，具体包括以下步骤：
A.在玻璃表面沉积一层高反射膜，并在高反射膜上贴附一层对玻璃表面形成保护作用的耐高温保护膜；
B.利用键合胶层实现玻璃与晶圆的临时键合，并完成晶圆背面工艺；
C.去除玻璃表面的耐高温保护膜及高反射膜；
D.利用UV解胶机实现玻璃与晶圆的分离。
上述一种利用UV实现晶圆与玻璃分离的方法，步骤A中所述高反射膜为金属材料膜，耐高温保护膜为黄胶带。
上述一种利用UV实现晶圆与玻璃分离的方法，步骤B中所述键合胶层为一层结构、两层结构或者三层结构。
所述三层结构的键合胶层自下而上依次为释放层、键合层和保护层。
上述一种利用UV实现晶圆与玻璃分离的方法，步骤D中所述UV解胶机为365nm波长的UV解胶机台。
由于采用了以上技术方案，本发明所取得技术进步如下。
本发明用于实现晶圆与玻璃的分离，利用365nm常规UV光进行键合胶层的处理，从而实现拆键合，且分离过程无良率损失，大幅提高了产出效率，降低了生产成本，可适用于批量生产过程中。
附图说明
图1为本发明步骤A中玻璃表面沉积高反射膜及耐高温保护膜的示意图；
图2为本发明步骤B中玻璃载片与器件晶圆进行临时键合的示意图；
图3为本发明步骤B中背面工艺集成示意图；
图4为本发明步骤C中去除玻璃面保护膜及高反射膜的示意图；
图5为本发明步骤D中在玻璃面进行UV光照射的示意图；
图6为本发明完成晶圆与玻璃分离并去除键合胶的薄晶圆示意图；
图7为本发明的流程图。
其中：1.玻璃，2.高反射膜，3.耐高温保护膜，4.键合胶层，5.正面钝化剂布线，6.硅衬底，7.绝缘层，8.背面钝化层，9.背面凸点，10.RDL层。
具体实施方式
下面将结合附图和具体实施例对本发明进行进一步详细说明。
本发明中，玻璃作为临时键合载片，起到承载并保护器件晶圆的作用。
一种利用UV实现晶圆与玻璃分离的方法，利用UV光进行键合胶层的处理后实现拆键合，其流程如图7所示，具体包括以下步骤。
A.在玻璃1表面沉积一层高反射膜2，并在高反射膜3上贴附一层对玻璃表面形成保护作用的耐高温保护膜3，如图1所示。
本步骤中的高反射膜用于实现玻璃的高反射特性，通常选用金属材料的高反射膜膜，当然也可以是其他材质的高反射膜；高反射膜能够将白光发射出去，避免白光对键合胶粘度产生有影响。耐高温保护膜用于对玻璃表面形成保护作用，通常选用黄胶带。
B.利用键合胶层4实现玻璃1与晶圆的临时键合，并完成晶圆背面工艺。其中，键合胶层为一层结构、两层结构或者三层结构，选用三层结构的键合胶层时，键合胶层包括自下而上依次为释放层、键合层和保护层。
晶圆与玻璃键合后的结构如图2所示，晶圆主要包括硅衬底6和正面钝化剂布线5；晶圆的背面结构如图3所示，主要包括RDL层10、绝缘层7、背面钝化层8以及背面凸点9。
C.去除玻璃表面的耐高温保护膜3及高反射膜2，如图4所示，以便于步骤D中的UV光可以透过玻璃层照射到键合界面。
D.利用UV解胶机实现玻璃与晶圆的分离。本步骤中，采用UV解胶机发射的UV光直接照射玻璃去除耐高温保护膜及高反射膜的表面，如图5所示；经过30s~5min的照射后，胶膜与晶圆的粘附性降低，玻璃便与晶圆彻底分离，分离后的晶圆如图6所示。
本发明中，UV解胶机选用365nm波长的UV解胶机台，可降低玻璃与晶圆的分离成本，且可靠性较高。

Claims (3)

1.一种利用UV实现晶圆与玻璃分离的方法，其特征在于，具体包括以下步骤：
A.在玻璃表面沉积一层高反射膜，并在高反射膜上贴附一层对玻璃表面形成保护作用的耐高温保护膜；
B.利用键合胶层实现玻璃与晶圆的临时键合，并完成晶圆背面工艺；所述键合胶层为三层结构，三层结构的键合胶层自下而上依次为释放层、键合层和保护层；
C.去除玻璃表面的耐高温保护膜及高反射膜；
D.利用UV解胶机实现玻璃与晶圆的分离。
2.根据权利要求1所述的一种利用UV实现晶圆与玻璃分离的方法，其特征在于，步骤A中所述高反射膜为金属材料膜，耐高温保护膜为黄胶带。
3.根据权利要求1所述的一种利用UV实现晶圆与玻璃分离的方法，其特征在于，步骤D中所述UV解胶机为365nm波长的UV解胶机台。
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