CN103295893B - A kind of wafer scale microwave assembly technology - Google Patents
A kind of wafer scale microwave assembly technology Download PDFInfo
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- CN103295893B CN103295893B CN201310209710.0A CN201310209710A CN103295893B CN 103295893 B CN103295893 B CN 103295893B CN 201310209710 A CN201310209710 A CN 201310209710A CN 103295893 B CN103295893 B CN 103295893B
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Abstract
The invention discloses a kind of wafer scale microwave assembly technology, comprise the following steps: device wafers is bonded with slide glass wafer by S1, employing ephemeral key rubber alloy, forms ephemeral key fit；S2, the device wafers on ephemeral key zoarium is carried out reduction process；S3, to the device wafers cutting after thinning in ephemeral key zoarium, obtain some chips being fixed on slide glass wafer；Include heating module or lighting module on S4, upside-down mounting equipment, device wafers ephemeral key zoarium up is positioned on upside-down mounting equipment, irradiated by heating or particular light ray and melt whole ephemeral key rubber alloies；S5, on upside-down mounting equipment absorption chip chip is carried out micro-group dress；The ephemeral key rubber alloy of the chip surface residual after S6, cleaning micro-group dress.The present invention can realize the microwave assembly technology of ultra-thin chip the most safely by this device wafers level microwave assembly technology, it is ensured that chip has before upside-down mounting and well carries protection, effectively completes the interconnection structure of three-dimension packaging.
Description
Technical field
The present invention relates to microelectronic packaging technology field, particularly relate to a kind of wafer scale microwave assembly technology,
To efficiently accomplish the interconnection structure of three-dimension packaging.
Background technology
Along with people are to development to directions such as miniaturization, multi-functional, environment-friendly types of the requirement of electronic product,
People make great efforts to seek to do less and less by electronic system, and integrated level is more and more higher, and function is done more and more, more come
The strongest, being processed into for the bottleneck of volume production ultrathin products of the thinnest wafer and thin chip.And at this base
Draw interim bonding on plinth and torn bonding technology open.
First interim bonding has the advantage that with tearing open to be bonded, and slide glass wafer is that thin device wafers provides
Support protection mechanically, thus can carry out the back side by the equipment of normal component wafer fabrication
Technique.For ultra thin device wafer, it is possible to achieve the PROCESS FOR TREATMENT of wafer scale.Therefore, ephemeral key is passed through
Close and tear bonding techniques open, utilizing every equipment of device wafers factory can process thin device wafers, and nothing
Need conversion unit again, and be not required to special termination effector, fixture or wafer cassette.
Meanwhile tear bonding open and also show certain unstable factor, because thin wafer is follow-up in technique
Microwave assembly technology in lacked certain support bearing, and enough protective measures.Work as device wafers
When thickness arrives below 50um, the yield tearing bonding technology open can not be guaranteed now, and this also allows manufacturer
The volume production of ultra-thin wafers can not be realized as early as possible.
Due to the multiple unfavorable factor of the method for these monolithic traditional handicrafts, to the yield rate of product and reliable
Property, and finally go out commodity price and all cause strong influence.Various new processes are the most progressively suggested
And discussion, but these methods are all to tear open at full wafer wafer to carry out on the Process ba-sis of bonding, there is system
Make that risk is big, high in cost of production shortcoming.
Therefore, for above-mentioned technical problem, it is necessary to provide a kind of new wafer scale microwave assembly technology.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of wafer scale microwave assembly technology, be initially formed device
Part wafer is fit with the ephemeral key of slide glass wafer, then by scribing, uses heat to melt before flip-chip
Or UV illumination method reduces the bonding force of ephemeral key rubber alloy between single chips and slide glass wafer, more real
The manufacture method of existing flip-chip, to efficiently accomplish the interconnection structure of three-dimension packaging.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of wafer scale microwave assembly technology, described technique comprises the following steps:
Device wafers is bonded by S1, employing ephemeral key rubber alloy with slide glass wafer, forms ephemeral key fit,
Described ephemeral key rubber alloy is that arrival rated temperature is melted or particular light ray irradiates gathering of lower bonding force reduction
Laminate material；
S2, the device wafers on ephemeral key zoarium is carried out reduction process；
S3, to the device wafers cutting after thinning in ephemeral key zoarium, obtain some being fixed on slide glass wafer
On chip；
Heating module or lighting module is included, by device wafers ephemeral key up on S4, upside-down mounting equipment
Zoarium is positioned on upside-down mounting equipment, is irradiated by heating or particular light ray and melts whole ephemeral key rubber alloies；
S5, on upside-down mounting equipment absorption chip chip is carried out micro-group dress；
The ephemeral key rubber alloy of the chip surface residual after S6, cleaning micro-group dress.
As a further improvement on the present invention, described ephemeral key rubber alloy is to arrive the polymerization that rated temperature is melted
During thing material, slide glass wafer is silicon slide glass wafer or glass slide wafer；Described ephemeral key rubber alloy is specific
When light irradiates the polymeric material producing separating interface, slide glass wafer is glass slide wafer.
As a further improvement on the present invention, described step S4 specifically includes:
If ephemeral key rubber alloy is to arrive the polymeric material that rated temperature is melted, made by heating module heating
Ephemeral key rubber alloy reaches to melt required rated temperature, makes ephemeral key rubber alloy be in molten condition；
If ephemeral key rubber alloy is particular light ray irradiates the polymeric material producing separating interface, by illumination mould
Block carries out particular light ray irradiation on slide glass wafer, reduces the bonding force of ephemeral key rubber alloy.
As a further improvement on the present invention, in described step S3 " to the device after thinning in ephemeral key zoarium
Part wafer cuts " realized by the cutting method of cutter, wet etching, dry etching or laser.
As a further improvement on the present invention, in described step S3, depth of cut is more than or equal to device wafers
Thickness and less than or equal to the gross thickness of device wafers and ephemeral key rubber alloy.
As a further improvement on the present invention, in described step S5, " micro-group dress " includes chip extremely chip, core
Sheet is to device wafers and chip to the encapsulation of substrate.
As a further improvement on the present invention, described step S6 particularly as follows:
The method removed by wet dissolution or plasma cleans the interim of the chip surface residual after micro-group fills
Bonding glue.
As a further improvement on the present invention, described technique also includes:
Device wafers is prepared TSV, metal interconnection and micro convex point.
Device wafers level microwave assembly technology of the present invention provides the benefit that:
Realize the making of device wafers level microwave assembly technology, use interim bonding by brilliant to device wafers and slide glass
Circle combines, then through scribing, device wafers is divided into single chips, finally heats before flip-chip
Ephemeral key rubber alloy is melted by slide glass wafer, it is achieved the manufacture method of ultra-thin chip micro-group dress.Pass through the method
The microwave assembly technology of ultra thin device wafer can be realized the most safely, it is ensured that chip is before upside-down mounting
Have and well carry protection.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments described in the present invention, for those of ordinary skill in the art
From the point of view of, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 show the flow chart of wafer scale microwave assembly technology of the present invention；
Fig. 2 a～2e show the idiographic flow of wafer scale microwave assembly technology in the present invention one preferred implementation
Figure.
Detailed description of the invention
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these are real
The mode of executing is not limiting as the present invention, and those of ordinary skill in the art is made according to these embodiments
Structure, method or conversion functionally are all contained in protection scope of the present invention.
The invention discloses a kind of wafer scale microwave assembly technology, including: interim bonding, device wafers cutting,
The heating of slide glass wafer, flip-chip, leave over the technique such as removal of bonding glue.After using interim bonding, first
Cutting device wafer carries out the method for flip-chip again and realizes thin device wafers and carry out micro-group dress to single chips
Processing technology, solve existing conventional thin device wafers and hold and the relevant issues such as thin chip cutting.
Shown in ginseng Fig. 1, a kind of wafer scale microwave assembly technology of the present invention includes:
Device wafers is bonded by S1, employing ephemeral key rubber alloy with slide glass wafer, forms ephemeral key fit,
Ephemeral key rubber alloy is to arrive the polymer that rated temperature is melted or the lower bonding force of particular light ray irradiation reduces
Material；
S2, the device wafers on ephemeral key zoarium is carried out reduction process；
S3, to the device wafers cutting after thinning in ephemeral key zoarium, obtain some being fixed on slide glass wafer
On chip；
Heating module or lighting module is included, by device wafers ephemeral key up on S4, upside-down mounting equipment
Zoarium is positioned on upside-down mounting equipment, is irradiated by heating or particular light ray and melts whole ephemeral key rubber alloies；
S5, on upside-down mounting equipment absorption chip chip is carried out micro-group dress；
The ephemeral key rubber alloy of the chip surface residual after S6, cleaning micro-group dress.
Specifically, this technique comprises the following steps:
Device wafers is bonded by S1, employing ephemeral key rubber alloy with slide glass wafer, forms ephemeral key fit.
Wherein, device wafers and slide glass wafer bonding technique are that the ephemeral key rubber alloy by polymeric material enters
Line unit closes, and ephemeral key rubber alloy irradiates lower bonding force reduce for arriving rated temperature thawing or particular light ray
Polymeric material, slide glass wafer material is silicon or glass.
When ephemeral key rubber alloy is the polymeric material arriving rated temperature thawing (such as HT series of keys rubber alloy
Deng), slide glass wafer is silicon slide glass wafer or glass slide wafer；When ephemeral key rubber alloy is that particular light ray is irradiated
During the polymeric material that lower bonding force reduces (such as UV glue etc.), slide glass wafer is glass slide wafer.
S2, the device wafers on ephemeral key zoarium is carried out reduction process.Specifically include:
First in device wafers, on a surface, prepare TSV, metal interconnection and micro convex point etc.；
Then by the method for grinding, the device wafers on ephemeral key zoarium is carried out thinning, thinning after
Device wafers thickness is 10～300 μm；
Thinning complete after device wafers again another surface on the technique such as perform etching, make after making TSV expose
Standby metal interconnection and micro convex point.
S3, the device wafers after thinning in ephemeral key zoarium is cut, obtain some being fixed on slide glass
Chip on wafer.
Device wafers in ephemeral key zoarium is cut through cutter, wet etching, dry etching
Or the cutting method of laser realizes, depth of cut is more than or equal to the thickness of device wafers and is less than or equal to
Device wafers and the gross thickness of ephemeral key rubber alloy.
During as used cutter cutting device wafer, the tool marks finally cut are parked in the middle of ephemeral key rubber alloy,
Now device wafers is cut into the chip that some separation are fixed on slide glass wafer.
First device wafers and slide glass wafer are bonded, temporarily by prior art by binding agent temporarily
After bonding, this device wafers lamination is carried out back side processing (thinning, etch, metallization etc.), then enters
Row tears bonding open, is stripped down by thin devices wafer from slide glass wafer.Last again to device wafers list
Solely carry out cutting, the technique such as encapsulation.And the present invention is not provided with tearing open bonding steps, device wafers surface
Technique is directly cut after completing on slide glass wafer, and cutting obtains after some chips again by flip-chip
It is encapsulated into appointment position, so ensure that chip has before upside-down mounting and well carry protection.
Heating module or lighting module is included, by device wafers ephemeral key up on S4, upside-down mounting equipment
Zoarium is positioned on upside-down mounting equipment, is irradiated by heating or particular light ray and melts whole ephemeral key rubber alloies.
This step completes at the upside-down mounting equipment with heating platform or particular light platform.
If ephemeral key rubber alloy is to arrive the polymeric material that rated temperature is melted, made by heating module heating
Ephemeral key rubber alloy reaches to melt required rated temperature, makes ephemeral key rubber alloy be in molten condition；
If ephemeral key rubber alloy is particular light ray irradiates the polymeric material producing separating interface, by illumination mould
Block carries out particular light ray irradiation on slide glass wafer, reduces the bonding force of ephemeral key rubber alloy.
S5, utilize upside-down mounting equipment absorption chip, and chip is carried out micro-group dress.
After heating or particular light ray are irradiated, the ephemeral key rubber alloy bonding force between chip and slide glass wafer is relatively
Little, it is possible to use upside-down mounting equipment is by chip pick-up upside-down mounting to ad-hoc location and welds, and face-down bonding is the most logical
The method crossing thermocompression bonding or hot reflux realizes connecting.
In the packaging technology of prior art, it is common that the envelope of device wafers to device wafers (wafer to wafer)
Dress, obtains the device wafers being stacked, cuts, obtain some cores after having encapsulated
Sheet.And in the technique that the present invention is different, first device wafers and slide glass wafer are combined, then through drawing
Device wafers is divided into single chips, the most again flip-chip by sheet, and the mode of flip-chip packaged chip is permissible
For the encapsulation (chip to chip) of chip extremely chip, the encapsulation (chip to wafer) of chip to device wafers or
Chip is to the encapsulation of substrate (chip to substrate).
The ephemeral key rubber alloy of the chip surface residual after S6, cleaning micro-group dress.
The ephemeral key rubber alloy of flip-chip rear surface residual needs to be removed, and minimizing technology is according to ephemeral key
The difference of rubber alloy can select the method that wet dissolution or plasma are removed.
According to HT series of keys rubber alloy in the present invention, general employing Remover chemical liquids is removed；If
Using UV glue, after illumination, ephemeral key rubber alloy can directly remove.
It is illustrated in figure 2 the idiographic flow of wafer scale microwave assembly technology in a detailed description of the invention of the present invention
Figure, concrete technology step is as follows:
1, choosing device wafers is silicon chip, completes device wafers surface treatment on device wafers one surface,
The technique such as including preparation TSV, metal interconnection and micro convex point；
2, the naked silicon chip that slide glass wafer 20 is 200um thickness is chosen；
3, the ephemeral key rubber alloy 30 utilizing HT series realizes the interim of device wafers 10 and slide glass wafer 20
Bonding, forms ephemeral key fit；
4, the device wafers on ephemeral key zoarium is carried out reduction process, thinning after device wafers 10 be
About 50um, thinning after be prepared as on the lateral surface of device wafers metal interconnection and micro convex point, obtain
Obtain bonding body structure as shown in Figure 2 a；
5, as shown in Figure 2 b, utilizing saw blade device wafers 10 to be cut, after cutting, tool marks are parked in temporarily
In the middle of bonding glue.After cutting, device wafers 10 is divided into and some is independently fixed on load by ephemeral key rubber alloy 30
Chip 11 in wafer 20；
6, select the upside-down mounting equipment with heating module, device wafers ephemeral key zoarium up is placed
On upside-down mounting equipment, and it is heated to ephemeral key rubber alloy melting, obtains chip 11 as shown in Figure 2 c；
7, as shown in Figure 2 d, utilize upside-down mounting equipment absorption chip 11 by core by the way of upside-down mounting thermocompression bonding
Sheet is welded to specific position, it is achieved flip-chip packaged；
8, the chemical agent utilizing ephemeral key rubber alloy corresponding realizes going of chip surface residual ephemeral key rubber alloy
Remove, obtain final sample as shown in Figure 2 e.
These are only the processing step of a preferred implementation of the present invention, in other embodiments, face
Shi Jianhe glue has heat tear the polymer of character open except choosing, it is also possible to chooses and has illumination and produce and separate boundary
The polymer in face；Cutting can also use the methods such as the cutting of wet etching, dry etching or laser to realize；
Chip can also be welded to specific position by the way of hot reflux.
By embodiment of above it can be seen that wafer scale microwave assembly technology of the present invention employing is bonded device temporarily
Part wafer and slide glass wafer combine, then through scribing, device wafers are divided into single chips, finally exist
Before flip-chip, ephemeral key rubber alloy is melted by heating or illumination slide glass wafer, it is achieved ultra-thin chip micro-group dress
Manufacture method.
Compared with prior art, the present invention is carried out on the Process ba-sis of bonding without tearing open in full wafer device wafers,
Process risk is little, low cost.Can be the most real by this device wafers level microwave assembly technology
The microwave assembly technology of existing ultra thin device wafer, it is ensured that chip has before upside-down mounting and well carries protection, has
Complete to effect the interconnection structure of three-dimension packaging.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment,
And without departing from the spirit or essential characteristics of the present invention, it is possible to real in other specific forms
The existing present invention.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and
Being nonrestrictive, the scope of the present invention is limited by claims rather than described above, therefore purport
All changes in falling in the implication of equivalency and scope of claim are included in the present invention.
Should not be considered as limiting involved claim by any reference in claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, but the most each reality
Mode of executing only comprises an independent technical scheme, and this narrating mode of description is only for understand
Seeing, those skilled in the art should be using description as an entirety, and the technical scheme in each embodiment is also
Other embodiments that it will be appreciated by those skilled in the art that can be formed through appropriately combined.
Claims (7)
1. a wafer scale microwave assembly technology, it is characterised in that described technique comprises the following steps:
Device wafers is bonded by S1, employing ephemeral key rubber alloy with slide glass wafer, forms ephemeral key fit,
Described ephemeral key rubber alloy is that arrival rated temperature is melted or particular light ray irradiates gathering of lower bonding force reduction
Laminate material, wherein, described slide glass wafer is glass slide wafer；
S2, the device wafers on ephemeral key zoarium is carried out reduction process；
S3, to the device wafers cutting after thinning in ephemeral key zoarium, obtain some being fixed on slide glass wafer
On chip；
Heating module or lighting module is included, by device wafers ephemeral key up on S4, upside-down mounting equipment
Zoarium is positioned on upside-down mounting equipment, is irradiated by heating or particular light ray and melts whole ephemeral key rubber alloies；
S5, on upside-down mounting equipment absorption chip chip is carried out micro-group dress；
The ephemeral key rubber alloy of the chip surface residual after S6, cleaning micro-group dress.
Technique the most according to claim 1, it is characterised in that described step S4 specifically includes:
If ephemeral key rubber alloy is to arrive the polymeric material that rated temperature is melted, make interim by heating module heating
Bonding glue reaches to melt required rated temperature, makes ephemeral key rubber alloy be in molten condition；
If ephemeral key rubber alloy is particular light ray irradiates the polymeric material producing separating interface, existed by lighting module
Carry out particular light ray irradiation on slide glass wafer, reduce the bonding force of ephemeral key rubber alloy.
Technique the most according to claim 1, it is characterised in that " to interim bonding in described step S3
In body thinning after device wafers cut " by cutter, wet etching, dry etching or laser
Cutting method realizes.
Technique the most according to claim 1, it is characterised in that in described step S3, depth of cut is big
In or the thickness equal to device wafers the gross thickness less than or equal to device wafers and ephemeral key rubber alloy.
Technique the most according to claim 1, it is characterised in that " micro-group dress " bag in described step S5
Include chip extremely chip, chip to device wafers and chip to the encapsulation of substrate.
Technique the most according to claim 1, it is characterised in that described step S6 particularly as follows:
The method removed by wet dissolution or plasma cleans the interim bonding of the chip surface residual after micro-group fills
Glue.
Technique the most according to claim 1, it is characterised in that also include in described technique:
Device wafers is prepared TSV, metal interconnection and micro convex point.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105047688B (en) * | 2015-07-31 | 2018-09-07 | 深圳市万中和科技有限公司 | A kind of packaging technology of small miniature organic light emitting display |
| CN106449505B (en) * | 2016-08-22 | 2019-01-25 | 中国电子科技集团公司第五十五研究所 | A kind of back process method for semiconductor ultra-thin device |
| CN106876333A (en) * | 2017-03-28 | 2017-06-20 | 华进半导体封装先导技术研发中心有限公司 | The preparation method and wafer level packaging structure of a kind of wafer level packaging structure |
| CN109449112A (en) * | 2018-09-27 | 2019-03-08 | 华进半导体封装先导技术研发中心有限公司 | Chip assemble method and chip assembled devices |
| CN110690868B (en) * | 2019-09-27 | 2021-02-19 | 无锡市好达电子股份有限公司 | Novel wafer-level packaging method for filter |
| CN111029356A (en) * | 2019-12-16 | 2020-04-17 | 上海集成电路研发中心有限公司 | Chip packaging method |
| CN111170271A (en) * | 2019-12-30 | 2020-05-19 | 杭州臻镭微波技术有限公司 | Coordination method for chip cutting errors in embedded micro-system module |
| CN114628241A (en) * | 2020-12-10 | 2022-06-14 | 武汉新芯集成电路制造有限公司 | Chip bonding method |
| CN113078092A (en) * | 2021-03-23 | 2021-07-06 | 浙江集迈科微电子有限公司 | Method for taking ultrathin chip |
| CN113161306B (en) * | 2021-04-15 | 2024-02-13 | 浙江集迈科微电子有限公司 | Efficient heat dissipation structure of chip and preparation process thereof |
| CN115274942B (en) * | 2022-08-02 | 2023-06-27 | 厦门大学 | Transfer method of miniature flip chip |
| CN115881862A (en) * | 2023-02-16 | 2023-03-31 | 江西兆驰半导体有限公司 | Mini LED chip thinning method and mini LED |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214624A (en) * | 2011-05-17 | 2011-10-12 | 北京大学 | Semiconductor structure with through holes and manufacturing method thereof |
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| JP2005332982A (en) * | 2004-05-20 | 2005-12-02 | Renesas Technology Corp | Method for manufacturing semiconductor apparatus |
| JP2007048958A (en) * | 2005-08-10 | 2007-02-22 | Renesas Technology Corp | Semiconductor device and manufacturing method thereof |
| CN103050480B (en) * | 2012-08-14 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | The back-patterned process of silicon chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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Application publication date: 20130911 Assignee: Jiangsu Xinde Semiconductor Technology Co.,Ltd. Assignor: National Center for Advanced Packaging Co.,Ltd. Contract record no.: X2022980027357 Denomination of invention: A wafer level micro assembly process Granted publication date: 20161228 License type: Common License Record date: 20221213 |