CN106363823B - 晶片的薄化方法 - Google Patents

晶片的薄化方法 Download PDF

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CN106363823B
CN106363823B CN201610569345.8A CN201610569345A CN106363823B CN 106363823 B CN106363823 B CN 106363823B CN 201610569345 A CN201610569345 A CN 201610569345A CN 106363823 B CN106363823 B CN 106363823B
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face
chip
thinning
sic substrate
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CN106363823A (zh
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平田和也
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Disco Corp
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Abstract

提供晶片的薄化方法，不用对背面进行磨削便能将由SiC基板构成的在正面上具有多个器件的晶片薄化至规定的厚度。晶片的薄化方法对在SiC基板的第一面上形成有多个器件的晶片进行薄化，该晶片的薄化方法具有如下的步骤：分离起点形成步骤，从第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在SiC基板的第一面附近，并且使聚光点与SiC基板相对地移动而对该第二面照射激光束，形成与该第一面平行的改质层和裂痕而作为分离起点；以及晶片薄化步骤，在实施了该分离起点形成步骤之后，施加外力而从该分离起点将具有第二面的晶片从具有形成有多个器件的该第一面的晶片分离，从而对具有该第一面的晶片进行薄化。

Description

晶片的薄化方法
技术领域
本发明涉及晶片的薄化方法，该晶片是在SiC基板的正面形成有多个器件的晶片。
背景技术
在以硅基板为原材料的晶片的正面上层叠功能层，在该功能层上在由多条分割预定线划分出的区域内形成IC、LSI等各种器件。并且，在通过磨削装置对晶片的背面进行磨削而使晶片薄化至规定的厚度之后，通过切削装置、激光加工装置等加工装置对晶片的分割预定线实施加工，将晶片分割成各个器件芯片，分割得到的器件芯片被广泛应用于移动电话、个人计算机等各种电子设备。
并且，在以SiC基板为原材料的晶片的正面上层叠功能层，在该功能层上在由多条分割预定线划分出的区域内形成功率器件或者LED、LD等光器件。
并且，与上述的硅晶片同样，在通过磨削装置对晶片的背面进行磨削而使晶片薄化至规定的厚度之后，通过切削装置、激光加工装置等对晶片的分割预定线实施加工，晶片被分割成各个器件芯片，分割得到的器件芯片被广泛应用于各种电子设备中。
专利文献1：日本特开2002-373870号公报
然而，存在如下的问题：与硅基板相比SiC基板的莫氏硬度非常高，当通过具有磨削磨具的磨削磨轮来对由SiC基板构成的晶片的背面进行磨削时，会磨损掉磨削量的4～5倍左右的磨削磨具，非常不经济。
例如，当对硅基板进行100μm磨削时磨削磨具会磨损0.1μm，与此相对，当对 SiC基板进行100μm磨削时，磨削磨具会磨损400～500μm，与对硅基板进行磨削的情况相比多磨损4000～5000倍。
发明内容
本发明是鉴于上述的点而完成的，其目的在于提供晶片的薄化方法，不对背面进行磨削而能够将正面上具有多个器件的由SiC基板构成的晶片薄化至规定的厚度。
根据本发明，提供一种晶片的薄化方法，该晶片的薄化方法对晶片进行薄化，其中，该晶片在SiC基板的第一面上形成有多个器件，该SiC基板具有：所述第一面；位于该第一面的相反侧的第二面；从该第一面至该第二面的c轴；以及与该c轴垂直的c面，该晶片的薄化方法的特征在于，具有如下的步骤：分离起点形成步骤，从该第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在SiC基板的该第一面附近，并且使该聚光点与SiC基板相对地移动而对该第二面照射激光束，形成与该第一面平行的改质层和从该改质层沿着c面伸长的裂痕而作为分离起点；以及晶片薄化步骤，在实施了该分离起点形成步骤之后，施加外力而从该分离起点将具有该第二面的晶片从具有形成有多个器件的该第一面的晶片分离，而对具有该第一面的晶片进行薄化，该分离起点形成步骤包含：改质层形成步骤，该c轴相对于该第二面的垂线倾斜偏离角，使激光束的聚光点沿着与在该第二面和该c面之间形成偏离角的第二方向垂直的第一方向相对地移动，而形成沿着第一方向伸长的直线状的改质层；以及转位步骤，在第二方向上使该聚光点相对地移动而转位规定的量。
优选本发明的晶片的薄化方法还具有磨削步骤，在实施了晶片薄化步骤之后，对具有形成有多个器件的第一面的晶片的背面进行磨削而使其平坦化。
根据本发明的晶片的薄化方法，在晶片的内部的整个面上形成改质层和裂痕之后，对晶片施加外力而以改质层和裂痕为分离起点将晶片分离成两部分，因此能够容易地对具有形成有多个器件的第一面的晶片进行薄化。因此，不用通过磨削磨具对由 SiC基板形成的晶片的背面进行磨削便能够使晶片薄化，能够解决因磨削磨具发生磨损而导致的不经济的问题。
在通过本发明的晶片的薄化方法对薄化后的晶片的背面进行磨削而使其平坦化的情况下，将晶片的背面磨削至1～5μm左右即可，此时的磨削磨具的磨损量能够控制为4～25μm左右。进而，由于能够将分离后的具有第二面的晶片作为SiC基板而进行再利用，所以经济性好。
附图说明
图1是适合实施本发明的晶片的薄化方法的激光加工装置的立体图。
图2是激光束产生单元的框图。
图3的(A)是SiC锭的立体图，图3的(B)是其主视图。
图4是示出将保护带粘接到SiC晶片的正面上的情形的立体图，该SiC晶片在正面上具有多个器件。
图5的(A)是示出隔着粘接于正面的保护带将晶片载置到卡盘工作台上的状态的立体图，图5的(B)是被卡盘工作台吸引保持的晶片的立体图。
图6是对分离起点形成步骤进行说明的立体图。
图7是SiC晶片的俯视图。
图8是对改质层形成步骤进行说明的示意性剖视图。
图9是对改质层形成步骤进行说明的示意性俯视图。
图10的(A)、(B)是对晶片薄化步骤进行说明的立体图(其一)。
图11是对晶片薄化步骤进行说明的立体图(其二)。
图12是示出对晶片的背面进行磨削而使其平坦化的磨削步骤的立体图。
图13是正面上粘接有保护带且背面经过磨削步骤实施了平坦化的SiC晶片的背面侧立体图。
标号说明
2：激光加工装置；11：SiC锭；13、37：第一定向平面；15、39：第二定向平面；19：c轴；21：c面；30：激光束照射单元；31：SiC晶片；36：聚光器(激光头)；41：保护带；43：改质层；45：裂痕；47：分离面；66：磨削磨轮；72：磨削磨具。
具体实施方式
以下，参照附图对本发明的实施方式进行详细地说明。参照图1，示出了适合实施本发明的晶片的薄化方法的激光加工装置2的立体图。激光加工装置2包含以能够在X轴方向上移动的方式搭载在静止基台4上的第一滑动块6。
第一滑动块6借助由滚珠丝杠8和脉冲电动机10构成的加工进给机构12沿着一对导轨14在加工进给方向、即X轴方向上移动。
第二滑动块16以能够在Y轴方向上移动的方式搭载在第一滑动块6上。即，第二滑动块16借助由滚珠丝杠18和脉冲电动机20构成的分度进给机构22沿着一对导轨24在分度进给方向、即Y轴方向上移动。
具有吸引保持部26a的卡盘工作台26搭载在第二滑动块16上。卡盘工作台26 能够借助加工进给机构12和分度进给机构22在X轴方向和Y轴方向上移动，并且借助收纳在第二滑动块16中的电动机而旋转。
在静止基台4上竖立设置有柱28，在该柱28上安装有激光束照射机构(激光束照射构件)30。激光束照射机构30由收纳在外壳32中的图2所示的激光束产生单元 34和安装于外壳32的前端的聚光器(激光头)36构成。在外壳32的前端安装有具有显微镜和照相机的拍摄单元38，该拍摄单元38与聚光器36在X轴方向上排列。
如图2所示，激光束产生单元34包含振荡出YAG激光或者YVO4激光的激光振荡器40、重复频率设定构件42、脉冲宽度调整构件44以及功率调整构件46。虽然未特别地图示，但激光振荡器40具有布鲁斯特窗，从激光振荡器40射出的激光束是直线偏光的激光束。
借助激光束产生单元34的功率调整构件46被调整为规定的功率的脉冲激光束被聚光器36的镜48反射，进而通过聚光透镜50将聚光点定位在卡盘工作台26所保持的被加工物即SiC晶片31的内部而进行照射。
参照图3的(A)，示出了SiC锭(以下，有时简称为锭)11的立体图。图3的 (B)是图3的(A)所示的SiC锭11的主视图。
锭11具有第一面(上表面)11a和处于第一面11a的相反侧的第二面(背面)11b。由于锭11的上表面11a是激光束的照射面，所以将其研磨成镜面。
锭11具有第一定向平面13和与第一定向平面13垂直的第二定向平面15。第一定向平面13的长度形成为比第二定向平面15的长度长。
锭11具有c轴19和与c轴19垂直的c面21，其中，该c轴19相对于上表面 11a的垂线17向第二定向平面15方向倾斜偏离角α。c面21相对于锭11的上表面 11a倾斜偏离角α。通常在六方晶单晶锭11中，与较短的第二定向平面15的伸长方向垂直的方向是c轴的倾斜方向。
在锭11中按照锭11的分子级设定有无数个c面21。在本实施方式中，偏离角α被设定为4°。然而，偏离角α不限于4°，能够在例如1°～6°的范围内自由地设定而制造出锭11。
再次参照图1，在静止基台4的左侧固定有柱52，在该柱52上经由形成于柱52 的开口53以能够在上下方向上移动的方式搭载有按压机构54。
参照图4，示出了在SiC晶片31的正面31a上粘接保护带41的情形的立体图。 SiC晶片(以下，有时简称为晶片)31是通过线切割机对图3所示的SiC锭11进行切片而得到的晶片，具有大约700μm的厚度。
在晶片31的正面31a被实施了镜面加工之后，通过光刻法在正面31a上形成功率器件等多个器件35。在由形成为格子状的多条分割预定线33划分的各区域内形成各器件35。
SiC晶片31具有第一定向平面37和与第一定向平面37垂直的第二定向平面39。第一定向平面37的长度形成为比第二定向平面39的长度长。
这里，由于SiC晶片31是通过线切割机对图3所示的SiC锭11进行切片而得到的晶片，所以第一定向平面37与锭11的第一定向平面13对应，第二定向平面39与锭11的第二定向平面15对应。
并且，晶片31具有c轴19和与c轴19垂直的c面21(参照图3)，该c轴19 相对于正面31a的垂线向第二定向平面39方向倾斜偏离角α。c面21相对于晶片31 的正面31a倾斜偏离角α。在该SiC晶片31中，与较短的第二定向平面39的伸长方向垂直的方向是c轴19的倾斜方向。
在将保护带41粘接于晶片31的正面31a之后，如图5的(A)所示，使保护带41侧朝下而将晶片31载置到卡盘工作台26上，使负压作用于卡盘工作台26的吸引保持部26a，如图5的(B)所示，将晶片31吸引保持在卡盘工作台26上，使晶片 31的背面31b露出。
并且，如图6和图7所示，以晶片31的第二定向平面39与X轴方向对准的方式使保持晶片31的卡盘工作台26旋转。
即，如图7所示，以与第二定向平面39平行的箭头A方向对准X轴方向的方式使卡盘工作台26旋转，即，该箭头A方向是与形成有偏离角α的方向Y1垂直的方向，换言之该方向Y1为c轴19与正面31a的交点19a相对于晶片31的正面31a的垂线17所存在的方向。
由此，沿着与形成有偏离角α的方向垂直的方向A扫描激光束。换言之，与形成有偏离角α的方向Y1垂直的A方向为卡盘工作台26的加工进给方向。
在本发明的晶片的薄化方法中，将从聚光器36射出的激光束的扫描方向设定为与晶片31的形成有偏离角α的方向Y1垂直的箭头A方向是很重要的。
即，本发明的晶片的薄化方法的特征在于探索出了如下的情况：通过将激光束的扫描方向设定为上述这样的方向，从形成于晶片31的内部的改质层传播的裂痕沿着 c面21非常长地伸长。
在本实施方式的晶片的薄化方法中，首先，实施分离起点形成步骤，从由SiC基板构成的晶片31的第二面(背面)31b将对于保持在卡盘工作台26上的晶片31具有透过性的波长(例如1064nm的波长)的激光束的聚光点定位在第一面(正面)31a 附近，并且使聚光点与晶片31相对地移动而对背面31b照射激光束，形成与正面31a 平行的改质层43以及从改质层43沿着c面21传播的裂痕45而作为分离起点。
该分离起点形成步骤包含：改质层形成步骤，如图7所示，使激光束的聚光点在图7的与箭头Y1方向垂直的方向即A方向上相对地移动，而如图8所示在晶片31 的内部形成改质层43和从改质层43沿着c面21传播的裂痕45，其中，图7的箭头 Y1方向为在c面21和背面31b之间形成有偏离角α的方向，该偏离角α为c轴19 相对于背面31b的垂线17倾斜的角度；以及转位步骤，如图9所示，使聚光点在形成有偏离角的方向即Y轴方向上相对地移动而转位进给规定的量。
如图8和图9所示，当在X轴方向上直线状地形成改质层43时，裂痕45从改质层43的两侧沿着c面21传播而形成。在本实施方式的晶片的薄化方法中包含转位量设定步骤，对从直线状的改质层43起在c面21方向上传播而形成的裂痕45的宽度进行测量，并设定聚光点的转位量。
在转位量设定步骤中，如图8所示，在将从直线状的改质层43起在c面方向上传播而形成在改质层43的单侧的裂痕45的宽度设为W1的情况下，将应进行转位的规定的量W2设定为W1以上2W1以下。
这里，按照以下的方式对优选的实施方式的分离起点形成步骤的激光加工条件进行设定。
光源：Nd：YAG脉冲激光
波长：1064nm
重复频率：80kHz
平均输出：3.2W
脉冲宽度：4ns
光斑直径：10μm
聚光透镜的数值孔径(NA)：0.45
转位量：400μm
在上述的激光加工条件中，在图8中，从改质层43沿着c面21传播的裂痕45 的宽度W1被设定为大致250μm，转位量W2被设定为400μm。
然而，激光束的平均输出不限于3.2W，在本实施方式的加工方法中，将平均输出设定为2W～4.5W而得到了良好的结果。在平均输出为2W的情况下，裂痕45的宽度W1为大致100μm，在平均输出为4.5W的情况下，裂痕45的宽度W1为大致 350μm。
由于在平均输出不到2W的情况以及比4.5W大的情况下，不能在晶片31的内部形成良好的改质层43，所以优选所照射的激光束的平均输出在2W～4.5W的范围内，在本实施方式中对晶片31照射平均输出3.2W的激光束。在图8中，将形成改质层43的聚光点距背面31b的深度D1设定为650μm。
如图9所示，如果完成了一边以规定的量进行转位进给一边在晶片31的整个区域的距背面31b的深度为D1的位置上形成多个改质层43和从改质层43沿着c面21 伸长的裂痕45，则实施晶片薄化步骤：施加外力而从由改质层43和裂痕45构成的分离起点将晶片分离，从而将在正面31a上具有多个器件35的晶片薄化至大约50μm 左右。
该晶片薄化步骤通过例如图10所示的按压机构54来实施。按压机构54包含：头部56，其通过内置在柱52内的移动机构在上下方向上移动；以及按压部件58，如图10的(B)所示，其相对于头部56按照箭头R方向旋转。
如图10的(A)所示，将按压机构54定位在保持于卡盘工作台26上的晶片31 的上方，如图10的(B)所示，使头部56下降直到按压部件58压接于晶片31的背面31b为止。
在将按压部件58压接于晶片31的背面31b的状态下，当按压部件58按照箭头 R方向旋转时，在晶片31中产生扭转应力，晶片31从形成有改质层43和裂痕45的分离起点断裂，能够将晶片31分离为保持在卡盘工作台26上的晶片31A和晶片31B。
在保持于卡盘工作台26上的晶片31A的背面即分离面47上残存有改质层43和裂痕45的一部分，如图11和图12所示，在分离面47上形成有微细的凹凸。因此，在本发明的晶片的薄化方法中，优选实施对晶片31A的背面即分离面47进行磨削而使其平坦化的磨削步骤。
在该磨削步骤中，如图12所示，利用磨削装置的卡盘工作台58隔着保护带41 对晶片31A进行吸引保持而使分离面47露出。磨削装置的磨削单元60包含：主轴 62，其由电动机旋转驱动；轮安装座64，其固定在主轴62的前端；以及磨削磨轮66，其通过多个螺钉68以能够装拆的方式安装在轮安装座64上。磨削磨轮66由环状的磨轮基台70和固定安装于磨轮基台70的下端部外周的多个磨削磨具72构成。
在磨削步骤中，一边使卡盘工作台58按照箭头a所示的方向以例如300rpm旋转，一边使磨削磨轮66按照箭头b所示的方向以例如6000rpm旋转，并且驱动磨削单元进给机构而使磨削磨轮66的磨削磨具72与晶片31A的分离面47接触。
并且，一边对磨削磨轮66以规定的磨削进给速度(例如0.1μm/s)朝向下方按照规定的量进行磨削进给，一边对晶片31A的分离面47进行磨削而使其平坦化。由此，如图13所示，对于晶片31A的背面31b而言，将残存的改质层43和裂痕45去除而变为平坦面。
在对薄化后的晶片31A的背面进行磨削而使其平坦化的情况下，将晶片31A的背面磨削至1～5μm左右即可，能够将磨削磨具72的磨损量控制在4～25μm左右。
并且，由于能够将图11中从晶片31A分离出的晶片31B作为SiC基板而进行再利用，所以非常经济。

Claims (2)

1.一种晶片的薄化方法，该晶片的薄化方法对晶片进行薄化，其中，该晶片在SiC基板的第一面上形成有多个器件，该SiC基板具有：所述第一面；位于该第一面的相反侧的第二面；从该第一面至该第二面的c轴；以及与该c轴垂直的c面，该晶片的薄化方法的特征在于，具有如下的步骤：
分离起点形成步骤，从该第二面将对于SiC基板具有透过性的波长的激光束的聚光点定位在SiC基板的该第一面附近，并且使该聚光点与SiC基板相对地移动而对该第二面照射激光束，形成与该第一面平行的改质层和从该改质层沿着c面伸长的裂痕而作为分离起点；以及
晶片薄化步骤，在实施了该分离起点形成步骤之后，施加外力而从该分离起点将具有该第二面的晶片从具有形成有多个器件的该第一面的晶片分离，而对具有该第一面的晶片进行薄化，
该分离起点形成步骤包含：
改质层形成步骤，该c轴相对于该第二面的垂线倾斜偏离角，使激光束的聚光点沿着与在该第二面和该c面之间形成偏离角的第二方向垂直的第一方向与SiC基板相对地移动，而形成沿着第一方向伸长的直线状的改质层；以及
转位步骤，在第二方向上使该聚光点与SiC基板相对地移动而转位规定的量。
2.根据权利要求1所述的晶片的薄化方法，其中，
该晶片的薄化方法还具有磨削步骤，在实施了该晶片薄化步骤之后，对具有形成有多个器件的该第一面的晶片的背面进行磨削而使其平坦化。
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