CN106340513A - 一种集成控制电路的功率模块 - Google Patents

一种集成控制电路的功率模块 Download PDF

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Publication number
CN106340513A
CN106340513A CN201510400779.0A CN201510400779A CN106340513A CN 106340513 A CN106340513 A CN 106340513A CN 201510400779 A CN201510400779 A CN 201510400779A CN 106340513 A CN106340513 A CN 106340513A
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China
Prior art keywords
power
substrate
base board
control base
wiring layer
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CN201510400779.0A
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CN106340513B (zh
Inventor
王涛
赵振清
李锃
鲁凯
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Delta Electronics Inc
Delta Optoelectronics Inc
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Delta Optoelectronics Inc
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Priority to CN201510400779.0A priority Critical patent/CN106340513B/zh
Priority to US15/151,730 priority patent/US9887183B2/en
Publication of CN106340513A publication Critical patent/CN106340513A/zh
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    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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Abstract

本发明提供了一种集成控制电路的功率模块，包括：功率基板；功率器件，该功率器件安装于功率基板上；至少一个控制基板，所述至少一个控制基板承载控制电路，与功率基板电性连接，且以一倾斜角设置于功率基板安装有功率器件的一面；其中，该倾斜角大于或等于45度且小于或等于135度。本发明提供的功率模块，除其中的控制基板与功率基板之间的连接占用模块的水平面积外，仅其中的功率基板占用了模块的水平面积，从而有效地减小了功率模块的水平占用面积，提高了功率模块的功率密度。

Description

一种集成控制电路的功率模块
技术领域
本发明涉及功率模块，尤其涉及一种集成有控制电路的、高功率密度的功率模块。
背景技术
现有的集成有驱动控制电路的功率模块一般包括功率器件、承载功率器件的功率基板、组成驱动控制电路的控制器件及承载驱动控制电路的控制基板。图1A-图1B分别为两种现有的集成有驱动控制电路的功率模块的示意图。如图1A所示，功率器件11通过焊料焊接至功率基板12上。功率器件11例如为功率半导体芯片，功率基板12例如为直接敷铜陶瓷(Directed Bonded Copper，DBC)基板。控制器件13例如包括：控制功率器件11的驱动器件，驱动所需的电阻、电容及一些其他器件如二极管等。控制器件13一般设置在控制基板14上。控制基板14例如为印刷电路板(Printed Circuit Board，PCB)。除功率基板12实现部分的电气连接之外，功率模块还采用引线连接技术，例如，使用粗铝线、金线等金属线36分别实现功率回路和信号回路的电路连接，及控制基板14与功率基板12之间的电路连接。功率基板12低于控制基板14是为了便于功率基板12的底部与散热器连接，实现功率器件11的散热。图1B所示的功率模块仅采用一块基板15，例如为金属绝缘基板(Insulated Metal Substrate，IMS)。将功率器件11及控制器件13均焊接至该基板15上。图1A与图1B两种结构的功率模块，由于功率器件11与控制器件13均水平布局在各自的基板上，因此所占据的水平面积(Footprint)较大。
现有的集成有解耦电容的控制电路的功率模块一般包括功率器件、承载功率器件的功率基板、解耦电容和二极管及承载解耦电容和二极管的控制基板。图2为现有的集成有解耦电容的控制电路的功率模块的示意图。如图2所示，功率器件11通过焊料焊接至功率基板12上。功率器件11例如为功率半导体芯片，功率基板12例如为直接敷铜基板。解耦电容23和二极管23’设置在控制基板14上，控制基板14例如为印刷电路板。除通过功率基板12实现部分连接外，还采用引线36分别实现功率回路和信号回路的电气连接，及控制基板14与功率基板12之间的电气连接。与图1A及图1B所示的功率模块类似，图2所示的功率模块所占据的水平面积也较大。
发明内容
有鉴于此，本发明提出了一种集成有控制电路的、高功率密度的功率模块，以有效减小模块的水平占用面积。
本发明的额外方面和优点将部分地在下面的描述中阐述，并且部分地将从描述中变得显然，或者可以通过本发明的实践而习得。
本发明提供了一种集成控制电路的功率模块，包括：功率基板；功率器件，功率器件安装于功率基板上；至少一个控制基板，至少一个控制基板承载控制电路，与功率基板电性连接，且以一倾斜角设置于功率基板安装有功率器件的一面；其中，倾斜角大于或等于45度且小于或等于135度。
于一实施例中，功率基板包括至少一层导电布线层，功率器件设置于至少一层导电布线层上。
于另一实施例中，功率基板包括：直接敷铜陶瓷基板、直接敷铝陶瓷基板、低温共烧陶瓷基板、直接电镀铜基板、金属绝缘基板、印刷电路板或引线框架基板。
于再一实施例中，功率器件类型包括：绝缘栅双极型晶体管、金属-氧化物半导体场效应晶体管或集成栅极换流晶闸管。
于再一实施例中，控制电路中的控制器件包括：驱动元件、驱动芯片、稳压管、光耦、电容、电阻、二极管及解耦电容的至少其中之一。
于再一实施例中，至少一个控制基板包括：至少一层导电布线层和至少一层绝缘层，控制电路中的控制器件设置于至少一层导电布线层上。
于再一实施例中，至少一个控制基板包括：印刷电路板、直接敷铜陶瓷基板、直接敷铝陶瓷基板、低温共烧陶瓷基板、直接电镀铜基板或金属绝缘基板。
于再一实施例中，至少一个控制基板包括2层导电布线层，2层导电布线层分别设置于至少一层绝缘层的两侧。
于再一实施例中，2层导电布线层的电流方向相反，以形成反向耦合电磁场。
于再一实施例中，每层导电布线层的厚度大于或等于5微米且小于或等于2毫米。
于再一实施例中，绝缘层的厚度大于或等于5微米且小于或等于2毫米。
于再一实施例中，至少一个控制基板包括1层导电布线层。
于再一实施例中，该功率模块还包括：至少一个中空金属柱和至少一个直插端子；其中至少一个中空金属柱通过连接材料电性连接且固定于功率基板上，至少一个直插端子通过连接材料电性连接且固定于至少一个控制基板上，且至少一个直插端子一一插置于至少一个中空金属柱中。
于再一实施例中，该功率模块还包括：至少一个弹簧接口和至少一个直插端子；其中至少一个弹簧接口通过连接材料电性连接且固定于功率基板上，至少一个直插端子通过连接材料电性连接且固定于至少一个控制基板上，且至少一个直插端子一一插置于至少一个弹簧接口中。
于再一实施例中，该功率模块还包括：至少一个弹簧接口；其中至少一个弹簧接口通过连接材料电性连接且固定于功率基板上，至少一个控制基板一一直接插置于至少一个弹簧接口中。
于再一实施例中，该功率模块还包括：至少一个直插端子；至少一个直插端子通过第一连接材料电性连接且固定于至少一个控制基板上，且至少一个直插端子通过第二连接材料电性连接且固定于功率基板上，其中第一连接材料的适用温度高于第二连接材料的适用温度。
于再一实施例中，该功率模块还包括：至少一个波峰焊接端子；至少一个波峰焊接端子通过第一连接材料电性连接且固定于至少一个控制基板上，且至少一个波峰焊接端子通过第二连接材料电性连接且固定于功率基板上，其中第一连接材料的适用温度高于第二连接材料的适用温度。
于再一实施例中，至少一个控制基板直接焊接于功率基板上。
于再一实施例中，至少一个控制基板的导电布线层包括与功率基板平行的弯折部，弯折部通过连接材料电性连接且固定于功率基板上。
于再一实施例中，至少一个控制基板垂直设置于功率基板安装有功率器件的一面。
于再一实施例中，该功率模块还包括密封材料，密封材料将功率基板、功率器件、至少一个控制基板及控制电路全部包裹于其中。
于再一实施例中，该功率模块还包括外壳，外壳盖合于功率基板安装有功率器件的一面上，且外壳上设置有至少一个卡合机构，至少一个卡合机构用于卡合至少一个控制基板。
于再一实施例中，在至少一个控制基板与至少一个卡合机构接触的位置还涂覆有粘接材料；及在外壳与功率基板接触的位置还涂覆有密封材料。
于再一实施例中，至少一个卡合机构包括安装槽。
于再一实施例中，至少一个卡合机构包括柔性卡扣。
于再一实施例中，外壳、至少一个控制基板与功率基板构成一腔体结构，将功率器件包围于其中。
本发明提供的功率模块，除其中的控制基板与功率基板之间的连接占用模块的水平面积外，仅其中的功率基板占用了模块的水平面积，从而有效地减小了功率模块的水平占用面积，提高了功率模块的功率密度。进一步地，本发明提供的功率模块的优化结构还能降低半导体器(PowerSemiconductor Devices)件的功率损耗及电压应力，从而提高其可靠性和效率。
附图说明
通过参照附图详细描述其示例实施方式，本发明的上述和其它特征及优点将变得更加明显。
图1A-图1B分别为两种现有的集成驱动控制电路的功率模块的示意图。
图2为现有的集成解耦电容控制电路的功率模块的示意图。
图3为根据一示例性实施例示出的集成控制电路的功率模块的侧视图。
图4A-图4C为根据一示例性实施例示出的集成驱动控制电路的半桥IGBT功率模块的示意图。
图5A-图5D为根据一示例性实施例示出的集成解耦电容控制电路的IGBT功率模块的示意图。
图6A-图6B为根据一示例性实施例示出的同时集成驱动控制电路及解耦电容控制电路的IGBT功率模块的示意图。
图7A-图7D分别为根据几个示例性实施例示出的集成几种不同控制电路的IGBT功率模块的电路拓扑结构图。
图8为带有寄生参数的半桥模块的电路拓扑结构图。
图9A-图9G分别为根据几个示例性实施例示出的控制基板与功率基板之间几种不同连接方式的示意图。
图10为根据一示例性实施例示出的具有塑封结构的功率模块的示意图。
图11A和图11B分别为根据一示例性实施例示出的外壳上带有安装槽的功率模块的侧视图和俯视图。
图12A和图12B分别为根据一示例性实施例示出的控制基板作为外壳一部分的功率模块的侧视图和俯视图。
图13A和图13B分别为根据一示例性实施例示出的带有柔性卡扣的功率模块的两种状态下的俯视图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本发明将全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。在图中相同的附图标记表示相同或类似的结构，因而将省略对它们的重复描述。
所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本发明的实施方式的充分理解。然而，本领域技术人员应意识到，没有所述特定细节中的一个或更多，或者采用其它的方法、组元料等，也可以实践本发明的技术方案。在其它情况下，不详细示出或描述公知结构或者操作以避免模糊本发明。
图3为根据一示例性实施例示出的集成控制电路的功率模块的侧视图。如图3所示，该功率模块3包括：功率器件31、功率基板32、控制器件33及控制基板34。其中，功率器件31安装于功率基板32上。控制基板34承载由控制器件33组成的控制电路，并与功率基板32电性连接。功率基板32水平放置。控制基板34垂直于功率基板32设置，并设置在功率基板32安装有功率器件31的一面上。控制器件33组成的控制电路用于控制功率器件31。功率基板32至少包括一层导电布线层321。功率器件31放置于导电布线层321上。控制基板34至少包括导电布线层341和绝缘层342。控制器件33放置于导电布线层341上。功率器件31和控制器件33均通过连接材料35连接至功率基板32的导电布线层321及控制基板34的导电布线层341上。功率器件31顶部的连接结构36实现了其与功率基板32的电气连接。从该结构中可以看出，该结构仅功率基板占用模块的水平面积。
功率基板32水平放置，便于安装至散热器(图中未示出)进行散热。功率基板32可以是DBC基板，这是由于功率模块中主要的发热元件为功率半导体芯片，并且通过电流较大，而DBC基板可通大电流、散热良好以及可靠性高。此外，功率基板32还可以是DBA(Direct BondingAluminum，直接敷铝陶瓷)基板、LTCC(Low-Temperature Co-fired Ceramic，低温共烧陶瓷)基板、DPC(Direct Plated Copper，直接电镀铜)基板、IMS(Insulated Metal Substrate，金属绝缘基板)基板、PCB、LF(Lead Frame，引线框架)等。
控制基板34可以是PCB，这是由于PCB布线密度高、布线灵活以及成本较低。此外，控制基板34还可以是以上除LF之外的其他基板类型。
功率器件31可以是IGBT，MOSFET，IGCT等功率半导体芯片。
功率基板32及控制基板34中的导电布线层321及341包括：金、银、铜、铜铝覆合材料、金-铂、钯-金、钯-银、铂-银和钯-铜-银等材料。绝缘层342包括：Al2O3、AlN、Si3N4、BeO等陶瓷，还可以为环氧基或硅基类有机材料。
上述连接材料35可以是焊料，金属间化合物(IMC，Intermetaliccompound)，也包括低温烧结材料(如银、铜焊膏等可在低温下进行烧结实现芯片与基板之间互联的材料)、导电银胶等材料。
功率器件31顶部的连接结构36可通过引线键合技术或无引线键合技术实现。引线键合技术采用铝线、铜线、铝铜复合线、金线等材质通过超声键合实现电气连接。无引线键合技术包括铝带连接(Al ribbon bonding)，金属直接连接(metal-metal direct bonding)、铜弹片连接(Cu Clip bonding)(中文)技术实现。其中，铝带连接技术中通过超声键合实现；金属直接连接技术采用超声焊接工艺，金属可以为Ag，Cu，Al，Au等；铜弹片连接技术使用连接材料实现铜弹片与芯片和基板导电布线层的电气连接，其中使用的连接材料也包括焊料、低温烧结材料(如银、铜焊膏等可在低温下进行烧结实现芯片与基板之间互联的材料)、导电银胶等材料等。
图4A-图4C为根据一实施例示出的集成驱动控制电路的半桥IGBT功率模块的示意图。其中图4A为该功率模块采用单面驱动控制基板时的侧视图，图4B为该功率模块采用双面驱动控制基板时的侧视图，图4C为该功率模块的电路拓扑结构。如图4A-4C所示，该功率模块4包括：功率器件31、控制器件43、功率基板32及控制基板34。其中每个功率器件31各包括一个IGBT芯片(T1或T2)和一个二极管(D1或D2)。控制器件43包括控制功率器件31的驱动器件，例如驱动所需电阻、电容，以及一些其他器件如二极管、稳压管、光耦等。控制器件43通过放置于控制基板34，组成驱动单元DR1和DR2，分别驱动IGBT芯片T1和T2。
控制器件43包括：驱动元件、驱动芯片、稳压管、光耦、电容、电阻或二极管等。
如图4C的拓扑结构所示，功率IGBT芯片T1，T2串联连接，并分别反向并联二极管D1，D2；T1的集极C1连接至Vbus+，发射极E1连接至T2的集极C2和phase端；T2的发射极E2连接至Vbus-；驱动单元DR1连接至IGBT芯片T1的栅极G1和发射极E1之间；驱动单元DR2连接至IGBT芯片T2的栅极G2和发射极E2之间。
具体而言，IGBT芯片T1和T2的底部(即集极)通过连接材料35连接至功率基板32的导电布线层321的Vbus+端和Phase端；IGBT芯片T1和T2的顶端发射极通过顶部连接结构36分别连接至导电布线层321的Phase端和Vbus-端；功率芯片T1和T2的顶端栅极通过顶部连接结构36分别连接至导电布线层321的栅极G1和G2，从而实现电气连接。带有驱动单元DR1和DR2的控制基板34分别垂直于功率基板32，并电气连接于导电布线层321的G1、E1端和G2、E2端。
组成驱动单元中DR1和DR2的控制器件43焊接至控制基板34的导电布线层341上，可以在控制基板34的一侧(如图4A)，也可以在双侧(如图4B)。
图5A-图5D为根据一实施例示出的集成解耦电容控制电路的IGBT功率模块的示意图。其中图5A为该功率模块采用单面驱动控制基板时的侧视图，图5B为该功率模块采用双面驱动控制基板时的侧视图，图5C为该功率模块的电路拓扑结构，图5D为图5B的俯视图。如图5A-图5D所示，该功率模块5包括：功率器件31、功率基板32、控制器件53及控制基板54。其中功率器件31各包括一个功率IGBT芯片(T1或T2)和一个二极管芯片(D1或D2)，组成控制电路的控制器件53包括解耦电容C及二极管D。控制基板54可选的基板类型同控制基板34，在此不再赘述。
如图5C的拓扑结构图所示，功率IGBT芯片T1、T2串联连接，并分别各反向并联二极管D1、D2。T1的集极C1连接至Vbus+，发射极E1连接至T2的集极C2和phase端；T2的发射极E1连接至Vbus-。控制电路包括电容C和二极管D的串联电路，且并联至功率IGBT芯片T1和T2串联支路的两端。其中解耦电容C一端与二极管D阳极连接，另一端与Vbus+端连接，二极管的阴极连接至Vbus-端。
具体而言，如图5A、图5B及图5D所示，带有解耦电容C的控制基板54至少包括导电布线层541和绝缘层532。IGBT芯片T1和T2的集极通过连接材料35封装至功率基板32的导电布线层321的Vbus+端和Phase端。功率芯片T1和T2的顶端发射极通过顶部连接结构36分别连接至导电布线层321的Phase端和Vbus-端。功率芯片T1和T2的顶端栅极通过顶部连接结构36分别连接至导电布线层321的栅极G1和G2，以实现电气连接。控制电路中的控制器件53焊接至控制基板54的导电布线层541上。控制基板54垂直连接至功率基板32上，并电气连接于导电布线层321的G1、E1端和G2、E2端。
如图5B所示的侧视图，带有解耦电容C的控制基板54还可包括另一导电布线层543，控制基板54的绝缘层542设置于两个导电布线层541、543之间。当功率器件31工作时，导电布线层541和导电布线层543的电流方向相反。在导电布线层541和543之间形成反向耦合电磁场，可进一步降低主回路的寄生电感。两个导电布线层541和543的寄生电感值与两个导电布线层541和543的重叠面积成反比，重叠面积越大，寄生电感越小；两导电布线层541和543的寄生电感值与量导电布线层的间距成正比，间距越小，寄生电感越小。
图6A-图6B为根据一实施例示出的同时集成驱动控制电路及解耦电容控制电路的IGBT功率模块的示意图。其中图6A为该功率模块的侧视图，图6B为该功率模块的电路拓扑结构。如图6A-图6B所示，该功率模块6包括：功率器件31、功率基板32、组成驱动控制电路的控制器件43、组成解耦电容控制电路的控制器件53、承载驱动控制电路的控制基板34及承载解耦电容控制电路的控制基板54。其中，承载驱动控制电路的控制基板34和承载解耦电容控制电路的控制基板54均垂直连接于功率基板32上，除其中的控制基板54与功率基板32之间的连接占用模块的水平面积外，只有功率基板32占据了水平面积。
如前所述，控制基板54的导电布线层541和导电布线层543的寄生电感量与两者间距成正比，即控制基板54的绝缘层542厚度越小，寄生电感越小；而另一方面绝缘层542的厚度受到材料加工的工艺限制，绝缘层542的厚度越小，越难实现生产。综合考虑以上两点，绝缘层542的厚度范围选择为5um～2mm。导电布线层541和543的厚度与导通电流、工艺限制及成本相关。导电布线层541和543越厚，可承受的导通电流越大，成本越高；另一方面受工艺限制，导电布线层541和543越厚必须在可生产的范围内。综上导电布线层541和543的厚度范围选择为5um～2mm。
此外，上述各实施例中的控制基板虽然均以垂直于功率基板的方式示出，但为了进一步降低功率模块的高度，提高功率密度，也控制基板也可以以一倾斜角α设置于功率基板上。但倾斜角α过小或过大，驱动回路均易受主回路电磁干扰，影响开关特性。另外，各控制基板与功率基板之间的连接有一定难度。因此要求倾斜角度α为45～135度。
本发明实施例提供的功率模块，除了可以集成有上述几种控制电路外，还可以集成其他控制电路。图7A-图7D分别示出了集成几种不同控制电路的IGBT功率模块的电路拓扑结构。
其中，如图7A所示，与图5C所示的电路拓扑结构图相比，控制电路7a仅包括解耦电容C，两端分别连接至Vbus+和Vbus-端。解耦电容C仅安置于控制基板54的导电布线层541或543上。
图7B为带有有源嵌位元的半桥功率电路拓扑结构图。与图5C所示的半桥电路相同，仅将原来的二极管D替换为MOSFET S。控制电路7b中的电容C和MOSFET S可安置于控制基板54的导电布线层541及导电布线层543上，也可只安置于至导电布线层541或者导电布线层543的其中之一。解耦电容C一端与MOSFET S的漏极连接，另一端连接至Vbus+，MOSFET S的源极连接至Vbus-端。
图7C为带有吸收电容的D型三电平功率电路拓扑结构图。如图7C所示，功率器件31包括：功率芯片T1、T2、T3、T4、分别与其并联的二极管D1、D2、D3、D4及二极管D5、D6。控制电路7c包括电容C1及C2。其中功率芯片T1～T4串联；二极管D5，D6串联，D5的阴极连接至T2的集极；D6的阳极连接至T3的发射极。T1、T2、T3及T4串联形成的支路与C1和C2串联形成的支路并联；二极管D5，D6串联连接后与T2和T3串联形成的支路并联；C1和C2串联连接的公共端与D5和D6串联连接的公共端相连。
对于图7C所示的结构，可采用本发明图5A所示的封装结构，将功率芯片(T1～T4，D1～D4，D5，D6)安置于功率基板32的导电布线层321上。吸收电容C1及C2安置于控制基板54的导电布线层541上。也可以采用图5B的封装结构，将电容C1及C2均放置于导电布线层541或543上，也可将电容C1及C2分别放置于导电布线层541和543上。针对T1、D5和C1组成的回路，电容C1可以降低开关过程中T1的集电极和D5的阳极之间的电压尖峰；当T1导通，D5阻断时，电容C1用于降低D5的两极之间的电压；当D5导通，T1断开时，电容C1用于降低T1的集极和发射极之间的电压。针对T4、D6和C2组成的回路，电容C2可以降低T4发射极和D6阴极之间的电压尖峰；当T4导通，D6阻断时，电容C2用于降低D6的两极之间的电压；当D6导通，T4断开时，电容C2用于降低T4的集极和发射极之间的电压。
图7D为带有吸收电容的T型三电平功率电路拓扑结构图。如图7D所示，功率器件31包括功率芯片T1、T2、T3、T4及分别与其并联的二极管D1、D2、D3、D4。控制电路7d包括电容C1和C2。其中功率芯片T1与T2串联，该串联支路与电容C1、C2串联连接形成的支路并联；功率芯片T3与T4串联连接，该串联支路连接于C1、C2串联连接的公共端和T1、T2串联连接的公共端之间。
对于图7D所示的结构，可采用本发明图5A的封装结构，将功率芯片安置于功率基板32的导电布线层321上；吸收电容C1及C2安置于控制基板54的导电布线层541上。也可以采用图5B的封装结构，将C1及C2均置于导电布线层541或543上，也可将C1及C2分别置于导电布线层541和543上。
本发明提供的功率模块，除其中的控制基板与功率基板之间的连接占用模块的水平面积外，仅其中的功率基板占用了模块的水平面积，从而有效地减小了功率模块的水平占用面积，提高了功率模块的功率密度。
以半桥模块为例，介绍由于封装带来的寄生参数对功率模块特性的影响。图8为带有寄生参数的半桥模块的电路拓扑结构图。其中，栅极寄生电感Lg1和Lg2分别构成功率芯片T1和T2的部分驱动回路电感，越大会增加T1/T2的开关时间和开关损耗。Lm1和Lm2为解耦电容与功率芯片之间的寄生电感，越大会增加功率芯片T1和T2的电压尖峰。
因此，提高功率模块的开关速度、降低损耗，需要驱动回路尽可能小，即减小控制电路和功率基板的连接距离，以减小栅极寄生电感Lg1和Lg2。例如，可通过将驱动控制电路设置于对应的功率器件附近，如图5D所示，将控制基板54置于功率器件门极G1,G2附近，以减小寄生电感Lg1和Lg2。为了降低功率模块中功率器件的电压尖峰以提高可靠性，可将带有解耦电容的控制电路设置于功率器件附近，例如如图5A-图5B或图6A所示，将控制基板54置于两个功率器件31之间，以减小寄生电感Lm1和Lm2。
为了进一步减小Lg1与Lg2及Lm1和Lm2，以降低功率器件的开关损耗及电压尖峰，提高功率模块的工作效率和可靠性，本发明提出以下几种控制基板和功率基板的连接方式，分别如图9A-图9G所示。需要说明的是，在下述的几种连接方式中，均仅以集成驱动控制电路的控制基板与功率基板的连接为例，但下述的连接方式同样适用于集成其他控制电路的控制基板与功率基板的连接方式，所述的其他控制电路包括但不限于上述任一种控制电路。
如图9A所示，控制基板34通过直插端子971和中空金属柱972与功率基板32连接。首先，将直插端子971采用连接材料35安置至控制基板34上；然后，中空金属柱972采用连接材料35安置于功率基板32上；最后将控制基板34上的直插端子971植入功率基板32上的中空金属柱972中，以实现控制基板34和功率基板32的机械和电气连接。其中，中空金属柱972的中空位置与控制基板34上的直插端子971的位置一一对应，中空金属柱972的中空尺寸与直插端子971的尺寸过盈配合。所采用的连接材料35同前述芯片的连接材料35相同，在此不再赘述；直插端子971可以为Cu或合金等；中空金属柱972可以为Cu、Al、合金等。
控制基板34的线路和功率基板32的线路连接距离产生的寄生电感属于栅极寄生电感Lg的一部分。通过上述的连接方式，垂直设置的控制基板34到水平设置的功率基板32上的线路距离很小，从而可以实现更小的栅极寄生电感Lg。
如图9B所示的连接方式中，可以将中空金属柱972替换为弹簧接口973，其实现方法同上，在此不再赘述。其中，弹簧接口973的位置与控制基板34的直插端子971的位置一一对应，且弹簧接口973的尺寸与直插端子971的尺寸过盈配合。
以上两种结构中分别引入中空金属柱972与弹簧973，结构较为复杂。因此，还可将控制基板34直接通过弹簧接口973连接至功率基板32上，具体如图9C所示。首先，将控制器件43采用连接材料35安置至控制基板34上；然后，弹簧接口973采用连接材料35安置于功率基板32上；最后直接将控制基板34***弹簧接口973。该结构去掉了直插端子，从而可以得到更小的栅极电感Lg。
另外，如图9D所示，还可以将直插端子971直接焊接至功率基板32上，以实现连接。首先，将控制器件43和直插端子971采用高温连接材料351安置至控制基板34上；然后，将带有直插端子971的控制基板34通过低温连接材料352安置于功率基板32上。去掉了中空金属柱972以及弹簧接口973，该结构的栅极电感Lg比图9C所示结构的Lg更小。该连接结构要求低温连接材料352将直插端子971连接至功率基板32的连接温度低于高温连接材料351的熔点或玻璃化温度。
以上直插端子的路径仍较长，为进一步减小栅极电感Lg，还可如图9E所示，使用波峰焊接端子974替代直插端子971。或者，也可如图9F所示，去掉波峰焊接端子974，直接将控制基板34焊接至功率基板32上。
此外，控制基板上的导电布线层也可用于连接功率基板。如图9G所示，首先将控制器件43采用高温连接材料351安置至控制基板34上；然后，将控制基板34上折弯的导电布线层971和343通过低温连接材料352安置于功率基板32上。对应的控制基板34一般为DBC基板，但本发明不仅限于此。
需要说明的是，图9A-图9G中控制基板34与功率基板32的连接方式适用于控制基板34为多层(大于或等于两层)基板的情况，而对于单层的控制基板34与功率基板32连接的情况，则仅可采用图9A-图9D中所示的连接方式。
采用上述几种控制基板与功率基板的连接方式，均能实现较小的连接路径。对于集成驱动控制电路的功率模块，能够减小栅极寄生电感Lg1和Lg2，减少功率器件的功率损耗，从而提高效率；而对于集成解耦电容控制电路的功率模块，能够减小回路的寄生电感Lm1和Lm2，降低电压应力，从而提高模块可靠性。
应用环境或运输条件要求功率模块能够耐受振动。仅依靠控制基板与功率基板的连接，连接处有失效风险，因此有必要对控制基板进行更为可靠的固定。
图10为具有塑封结构的功率模块的示意图。对于塑封结构的功率模块，其中填充有密封材料118。由于密封材料118具有良好的机械强度，能够对控制基板提供良好的机械支撑，而无需额外添加其他机械结构以固定控制基板。
而对于带外壳封装的功率模块，可在外壳上加工针对控制基板的安装槽。图11A和图11B分别为根据一示例性实施例示出的外壳上带有安装槽的功率模块的侧视图和俯视图。为简单起见，图11B所示的俯视图中仅示意了控制基板34与外壳110上的安装槽S及粘接材料119。需要说明的是，图11A和图11B中均以仅集成驱动控制电路的功率模块为例，但本发明不以此为限。该结构包括控制基板34、功率基板32、带有安装槽S的外壳110、密封材料118以及粘接材料119。首先，在控制基板34的侧边，即与安装槽S接触的位置涂覆粘接材料119；然后，在外壳110的底部与功率基板32接触的位置涂覆密封材料118；最后，将外壳110的安装槽S置于控制基板34的正上方，从上向下安装，从而将控制基板34卡入安装槽S内，再对密封材料118与粘接材料119进行固化处理，固定控制基板34的侧面，以改善控制基板34的机械稳定性。
其中粘接材料119可以为有机硅类树脂、硫化硅橡胶及环氧树脂等。其成分中还可加入填料以调整其物理特性。内部填料可以为石英、氧化铝、氢氧化铝、氧化锌及氮化硼等。粘接材料要求固化后粘接强度>100Pa，硬度为邵氏A10以上。
此外，在外壳110上开有至少一小孔1101，用于引出端子或点胶。在模块内部，还可以填充例如有机硅胶等材质的填充物1102，进一步固定、保护其内部器件。
控制基板还可以作为外壳的一部分。图12A和图12B分别为根据一示例性实施例示出的控制基板作为外壳一部分的功率模块的侧视图和俯视图。同样地，为简单起见，图12B所示的俯视图中仅示意了控制基板34与外壳110上的安装槽S及粘接材料119。需要说明的是，图12A和图12B中均以仅集成驱动控制电路的功率模块为例，但本发明不以此为限。如图12A和图12B所示，该结构不仅需在控制基板34的侧边与安装槽S接触的位置涂覆粘接材料119，还要在控制基板34与功率基板32的连接处涂覆密封材料118，以确保后续用于保护功率芯片的有机硅胶1102不会溢出。
同样地，外壳110上开有至少一小孔1101，用于引出端子或点胶。
除外壳加工安装槽之外，还可以在控制基板上安置柔性卡扣。图13A和图13B分别为根据一示例性实施例示出的带有柔性卡扣的功率模块的两种状态下的俯视图。同样地，为简单起见，图13A和图13B所示的俯视图中仅示意了控制基板34、柔性卡扣J、外壳110及粘接材料119。与图11A和图11B所示的功率模块的安装方式不同，将外壳110从左或右方向推向带有柔性卡扣J的控制基板34，以通过柔性卡扣J卡合控制基板34。此外，柔性卡扣J还可加工于外壳110上(图中未示出)。
以上具体地示出和描述了本发明的示例性实施方式。应该理解，本发明不限于所公开的实施方式，相反，本发明意图涵盖包含在所附权利要求范围内的各种修改和等效置换。

Claims (26)

1.一种集成控制电路的功率模块，其特征在于，包括：
功率基板；
功率器件，所述功率器件安装于所述功率基板上；
至少一个控制基板，所述至少一个控制基板承载所述控制电路，与所述功率基板电性连接，且以一倾斜角设置于所述功率基板安装有所述功率器件的一面；
其中，所述倾斜角大于或等于45度且小于或等于135度。
2.根据权利要求1所述的功率模块，其中所述功率基板包括至少一层导电布线层，所述功率器件设置于所述至少一层导电布线层上。
3.根据权利要求2所述的功率模块，其中所述功率基板包括：直接敷铜陶瓷基板、直接敷铝陶瓷基板、低温共烧陶瓷基板、直接电镀铜基板、金属绝缘基板、印刷电路板或引线框架基板。
4.根据权利要求1所述的功率模块，其中所述功率器件类型包括：绝缘栅双极型晶体管、金属-氧化物半导体场效应晶体管或集成栅极换流晶闸管。
5.根据权利要求1所述的功率模块，其中所述控制电路中的控制器件包括：驱动元件、驱动芯片、稳压管、光耦、电容、电阻、二极管及解耦电容的至少其中之一。
6.根据权利要求1所述的功率模块，其中所述至少一个控制基板包括：至少一层导电布线层和至少一层绝缘层，所述控制电路中的控制器件设置于所述至少一层导电布线层上。
7.根据权利要求6所述的功率模块，其中所述至少一个控制基板包括：印刷电路板、直接敷铜陶瓷基板、直接敷铝陶瓷基板、低温共烧陶瓷基板、直接电镀铜基板或金属绝缘基板。
8.根据权利要求6所述的功率模块，其中所述至少一个控制基板包括2层导电布线层，所述2层导电布线层分别设置于所述至少一层绝缘层的两侧。
9.根据权利要求8所述的功率模块，其中所述2层导电布线层的电流方向相反，以形成反向耦合电磁场。
10.根据权利要求8所述的功率模块，其中所述每层导电布线层的厚度大于或等于5微米且小于或等于2毫米。
11.根据权利要求8所述的功率模块，其中所述绝缘层的厚度大于或等于5微米且小于或等于2毫米。
12.根据权利要求6所述的功率模块，其中所述至少一个控制基板包括1层导电布线层。
13.根据权利要求8或12所述的功率模块，还包括：至少一个中空金属柱和至少一个直插端子；其中所述至少一个中空金属柱通过连接材料电性连接且固定于所述功率基板上，所述至少一个直插端子通过所述连接材料电性连接且固定于所述至少一个控制基板上，且所述至少一个直插端子一一插置于所述至少一个中空金属柱中。
14.根据权利要求8或12所述的功率模块，还包括：至少一个弹簧接口和至少一个直插端子；其中所述至少一个弹簧接口通过连接材料电性连接且固定于所述功率基板上，所述至少一个直插端子通过所述连接材料电性连接且固定于所述至少一个控制基板上，且所述至少一个直插端子一一插置于所述至少一个弹簧接口中。
15.根据权利要求8或12所述的功率模块，还包括：至少一个弹簧接口；其中所述至少一个弹簧接口通过连接材料电性连接且固定于所述功率基板上，所述至少一个控制基板一一直接插置于所述至少一个弹簧接口中。
16.根据权利要求8或12所述的功率模块，还包括：至少一个直插端子；所述至少一个直插端子通过第一连接材料电性连接且固定于所述至少一个控制基板上，且所述至少一个直插端子通过第二连接材料电性连接且固定于所述功率基板上，其中所述第一连接材料的适用温度高于所述第二连接材料的适用温度。
17.根据权利要求8所述的功率模块，还包括：至少一个波峰焊接端子；所述至少一个波峰焊接端子通过第一连接材料电性连接且固定于所述至少一个控制基板上，且所述至少一个波峰焊接端子通过第二连接材料电性连接且固定于所述功率基板上，其中所述第一连接材料的适用温度高于所述第二连接材料的适用温度。
18.根据权利要求8所述的功率模块，其中所述至少一个控制基板直接焊接于所述功率基板上。
19.根据权利要求8所述的功率模块，其中所述至少一个控制基板的导电布线层包括与所述功率基板平行的弯折部，所述弯折部通过连接材料电性连接且固定于所述功率基板上。
20.根据权利要求1所述的功率模块，其中所述至少一个控制基板垂直设置于所述功率基板安装有所述功率器件的一面。
21.根据权利要求1所述的功率模块，还包括密封材料，所述密封材料将所述功率基板、所述功率器件、所述至少一个控制基板及所述控制电路全部包裹于其中。
22.根据权利要求1所述的功率模块，还包括外壳，所述外壳盖合于所述功率基板安装有所述功率器件的一面上，且所述外壳上设置有至少一个卡合机构，所述至少一个卡合机构用于卡合所述至少一个控制基板。
23.根据权利要求22所述的功率模块，其中在所述至少一个控制基板与所述至少一个卡合机构接触的位置还涂覆有粘接材料；及在所述外壳与所述功率基板接触的位置还涂覆有密封材料。
24.根据权利要求22所述的功率模块，其中所述至少一个卡合机构包括安装槽。
25.根据权利要求22所述的功率模块，其中所述至少一个卡合机构包括柔性卡扣。
26.根据权利要求24或25所述的功率模块，其中所述外壳、所述至少一个控制基板与所述功率基板构成一腔体结构，将所述功率器件包围于其中。
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